CN111969398A - Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber - Google Patents
Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 87
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 85
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 46
- 230000008878 coupling Effects 0.000 claims abstract description 18
- 238000010168 coupling process Methods 0.000 claims abstract description 18
- 238000005859 coupling reaction Methods 0.000 claims abstract description 18
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 238000005086 pumping Methods 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 7
- 229910009372 YVO4 Inorganic materials 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 239000013307 optical fiber Substances 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- -1 graphite alkene Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000000382 optic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0619—Coatings, e.g. AR, HR, passivation layer
- H01S3/0621—Coatings on the end-faces, e.g. input/output surfaces of the laser light
- H01S3/0623—Antireflective [AR]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
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Abstract
The invention discloses a voltage-controllable all-solid-state passively Q-switched laser based on a graphene saturable absorber, which comprises: the device comprises a pumping source, a coupling system, a gain medium, a graphene saturable absorption device and an optical resonant cavity; the pumping source is focused on a gain medium through a coupling system, and light emitted from the gain medium, the graphene saturable absorber and the optical resonant cavity act to output pulse laser.
Description
Technical Field
The invention belongs to the technical field of laser technology and nonlinear optics thereof, and particularly relates to a voltage-controllable all-solid-state passive Q-switched laser based on a graphene saturable absorber.
Background
In recent years, two-dimensional nanomaterials represented by Graphene (Gr) have become a research hotspot in the field of current material science. Structurally, graphene is a substance of a two-dimensional honeycomb crystal structure formed by close packing of single-layer carbon atoms, the packed carbon atoms are connected with each other by sp2 hybridized orbitals, adjacent carbon atoms are in a planar regular triangle configuration, the angle of a C-C bond is 120 degrees, a regular hexagonal packing structure is formed, p orbitals which do not participate in hybridization are mutually parallel to form a conjugated pi bond, system energy is reduced, and the graphene structure is very stable. In addition, due to the characteristics of broadband saturable absorption, good heat conductivity, low cost, short relaxation time and the like, the graphene successfully realizes short-pulse laser output in a fiber laser and a solid laser, and researchers prove that the SA with excellent performance for realizing the short-pulse laser output is provided. However, most conventional lasers are limited by the fixed saturable absorption characteristics of graphene, which is a two-dimensional material, to constant operating conditions. In the prior art, the technology based on graphene electro-optic modulation mainly uses a waveguide as a carrier to couple with modulated light, the waveguide has large insertion loss, and due to the limitation of cut-off wavelength, the application of the graphene electro-optic modulator in a laser is greatly limited.
Disclosure of Invention
The purpose of the invention is as follows: in order to solve the problems in the prior art, the invention provides a pulse tunable all-solid-state passive Q-switched laser based on a graphene saturable absorber, which changes the Fermi level of graphene by adding grid voltage, realizes the change of the optical absorption intensity of the graphene and enables the graphene to have different modulation depths; in addition, the cavity structure of the V-shaped resonant cavity is adopted, so that the optical loss caused by absorption and refraction can be effectively reduced, the complexity of the cavity is effectively simplified under the condition of ensuring that the Q-switching threshold is reached, and the convenience of the laser is ensured.
The technical scheme is as follows: a voltage controllable all-solid-state passively Q-switched laser based on a graphene saturable absorber device comprises: the device comprises a pumping source, a coupling system, a gain medium, a graphene saturable absorption device and an optical resonant cavity; the pumping source is focused on a gain medium through a coupling system, and light emitted from the gain medium, the graphene saturable absorber and the optical resonant cavity act to output pulse laser.
Further, the pump source is a fiber-coupled semiconductor laser.
Further, the coupling system is a coupling lens group, and the pump light output by the pump source is coupled and focused on the gain medium through the coupling lens group 1: 1.
Further, the gain medium is Nd: YVO4And (4) crystals.
Further, YVO is the Nd4The input end face of the crystal is plated with an antireflection film and a high-reflection film, and the output end face of the crystal is plated with an antireflection film.
Further, the graphene saturable absorber device has a field effect transistor structure and comprises a quartz glass sheet, a graphene thin film, a source electrode, a drain electrode, an alignment electrode, IGZO and Si3N4The graphene film is arranged on a quartz glass sheet, the source electrode and the drain electrode are formed on the graphene film according to a preset electrode pattern, and the Si is3N4Growing on the graphene film, the source electrode and the drain electrode, wherein the IGZO is grown on Si3N4The alignment electrode is formed on the IGZO according to a predetermined electrode pattern.
Further, the optical resonator comprises a folding mirror M1 and an output mirror M2, the folding mirror M1 is disposed in front of the graphene saturable absorber, the output mirror M2 is disposed behind the graphene saturable absorber, light emitted from the gain medium sequentially penetrates through the folding mirror M1 and the graphene saturable absorber and then is emitted to the output mirror M2, and pulse laser light is output by the output mirror M2.
Further, the folding mirror M1 is a plane concave mirror, and the plane concave mirror is coated with a high reflection film and an antireflection film.
Further, the output mirror M2 is coated with a high reflective film.
Further, an included angle exists between the distance from the input end face of the gain medium to the folding mirror M1 and the distance from the folding mirror M1 to the output mirror M2.
Has the advantages that: compared with the prior art, the invention has the following advantages:
1. the saturable absorber used as the solid Q-switched laser is prepared based on the electro-optic modulation characteristic of graphene, and the Fermi level and the carrier concentration of the graphene are changed by externally adding grid voltage, so that the nonlinear modulation depth is changed, and finally the performance of the all-solid Q-switched laser is regulated and controlled. The graphene is mainly prepared by adopting a chemical vapor deposition method, so that the graphene electro-optic modulator has the advantages of good uniformity, high carrier mobility, low cost and the like, and can effectively realize a graphene electro-optic modulator with high modulation rate and low modulation voltage;
2. the invention adopts the graphene two-dimensional material as the saturable absorption device for the all-solid Nd: YVO4In the laser, because the graphene material has an ultra-wide optical response wavelength range, an ultra-fast carrier relaxation rate and a controllable modulation depth, high stability, controllable pulse repetition frequency, tunable pulse width and passively Q-switched pulse laser output can be realized.
3. The invention adopts the microelectronic printer to print the silver ink into the device electrode according to the designed pattern, and the printed electrode has high precision, good continuity and easy storage. The designed interdigital electrode can effectively improve the coupling effect of an electric field and enhance the modulation capability on graphene; while providing a sufficient window for laser light to impinge upon.
4. The invention is based on the electro-optic modulation effect of graphene, and is applied to all-solid Nd: YVO4The output pulse laser is actively regulated and controlled by external grid voltage in the laser, the laser has higher pulse energy, controllable pulse repetition frequency and pulse width, and is a novel pulse-adjustable all-solid-state passive Q-switched laser based on a graphene material. The passive Q-switched solid laser responds to the cavity through the nonlinear absorption effect of grapheneThe internal loss is modulated, the pulse tunable all-solid-state passive Q-switched laser is different from the working mechanism of the traditional pulse tunable laser based on an active electro-optic modulation crystal and a passive saturable absorber, has the characteristics of controllable modulation depth, good stability, compact structure and the like, also shows huge competitive advantages and bright prospects in industrial application, is a pulse tunable all-solid-state passive Q-switched laser with a brand-new structure based on a novel graphene electro-optic material, and has wide market prospect.
Drawings
Fig. 1 is a schematic view of the V-shaped cavity structure of the present invention.
Fig. 2 is a schematic structural diagram of a graphene saturable absorber device according to the present invention;
FIG. 3 is a graph of leakage current as a function of modulation voltage for a graphene saturable absorber device employed in the present invention;
FIG. 4 is a graph of absorption of incident light as a function of modulation voltage in accordance with the present invention;
fig. 5 is a tuning depth of the graphene saturable absorber device of the present invention without gate voltage;
fig. 6 shows the tuning depth of the graphene saturable absorber device of the present invention at a gate voltage of 60V;
FIG. 7 is a graph of pulse width and repetition frequency as a function of modulation voltage for the present invention;
fig. 8 is a graph of the pulse output of the present invention at different gate voltages.
Detailed Description
The technical solution of the present invention will be further explained with reference to the accompanying drawings and examples.
Example 1:
the voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device comprises a pumping source, a coupling system, a gain medium, the graphene saturable absorber device and an optical resonant cavity, wherein the pumping source is focused on the laser gain medium through the 1:1 coupling system, the graphene saturable absorber device is connected with the pumping source through the optical resonant cavity, a laser beam generated by the pumping source acts on the graphene saturable absorber device in a back-and-forth transmission mode, and the graphene saturable absorber deviceThe device is used for realizing active regulation and control of the output performance of the all-solid-state passive Q-switched laser based on the regulation and control of the optical absorption performance of the graphene material by external modulation voltage. As shown in fig. 2, the graphene saturable absorber device of the present embodiment has a field effect transistor structure, and specifically includes: quartz glass sheet 7, graphene thin film 8, source/drain electrodes 9, alignment electrode 10, IGZO 11, and Si3N412, placing the graphene film 8 on the quartz glass sheet 7, forming a source/drain electrode 9 on the graphene film 8 according to a preset electrode pattern by adopting a microelectronic printer, and forming Si3N412 are grown on the graphene film 8 and the source/drain electrodes 9, and IGZO 11 is grown on Si3N412, the alignment electrode 10 is formed on the IGZO 11 according to a predetermined electrode pattern, and the graphene film 8 is not disposed directly above the source/drain electrodes 9.
External modulation voltage is respectively applied to a source drain and a grid of the graphene saturable absorber, the external modulation voltage is periodic modulation voltage, and laser beams are incident perpendicular to the graphene film 8.
Example 2:
in this embodiment, on the basis of embodiment 1, a laser is provided, in which a fiber-coupled semiconductor laser 1 is used as a pump source to output pump light, a coupling lens group 2 is used as a coupling system, and Nd: YVO is used4The crystal is used as a gain medium, and the folding mirror M14 and the output mirror M26 are used as optical resonant cavities. As shown in FIG. 1, the pump light output from the pump source is emitted to the coupling lens assembly 2, and the pump light is coupled and focused on Nd: YVO via the coupling lens assembly 1:14 Crystal 3 from Nd: YVO4After being emitted, the crystal 3 emits to a folding mirror M14, and emits to an output mirror M26 after penetrating through a graphene saturable absorber 5, and finally pulse laser is output by the output mirror M26.
The components employed in the present embodiment will now be described in detail as follows:
the central wavelength of the semiconductor laser 1 is 808nm, the output maximum power is 20W, the diameter of the optical fiber core is 400mm, and the numerical aperture is 0.22.
Nd:YVO4Crystal 3Nd3+Has a doping degree of 0.5 at.% and a size of 3X 5mm3The input end face is coated with 808nm antireflection film and 1064nm high-reflection film, the output end face is coated with 1064nm antireflection film, and the Nd of the embodiment is YVO4The crystal 3 is placed in a clamp with a specific size and wrapped by indium foil, and an external circulating water source is introduced for cooling so as to control the temperature of the crystal and improve the stability of the system.
The folding mirror M14 is a plane concave mirror with a curvature radius of 206mm, is plated with a 1064nm high-reflection film and a 808nm antireflection film, the output mirror M26 is plated with a 1064nm high-reflection film, and the output mirror M26 has a transmittance of 10% for 1064nm light. Nd: YVO4The distance L1 from the input end face of the crystal 3 to the folding mirror M14 is 70 mm; the distance L2 from the fold mirror M14 to the output mirror M26 was 75mm, and the angle between L1 and L2 was 15 °.
FIG. 3 shows that the graphene saturable absorber device is at 0,10,25,50mW/cm2The drain current under four different light intensities is in the change relation with the modulation voltage, the change curve of the drain current in the voltage range of-60-60V can be obtained through the change of the modulation voltage applied to the graphene saturable absorber, and the drain current and the modulation voltage are in positive correlation in the positive voltage range of 0-60V, so that the voltage modulation capability is good.
Fig. 4 shows a function relation diagram of incident light absorption rate of the graphene saturable absorption device with modulation voltage, and in a voltage range of 0-60V, the incident light absorption rate of the graphene saturable absorption device changes with the change of voltage, so that the graphene saturable absorption device has excellent voltage regulation optical absorption characteristics.
FIG. 5 and FIG. 6 are graphs showing the modulation depth relations of the graphene saturable absorber device under the gate-free voltage and the gate voltage of 60V, respectively, the modulation depth of the graphene saturable absorber device under the condition of no applied voltage (0V) is about 3.9%, and the saturation intensity is 9.2MW/cm2The modulation depth of the graphene saturable absorber device under the maximum applied voltage (60V) is about 5.5%, and the saturation intensity is 10.9MW/cm2Therefore, the modulation depth of the graphene saturable absorption device can be effectively changed by modulating the voltage, and the output characteristic of the all-solid-state Q-switched laser is changed.
FIG. 7 shows a graph of the pulse width and the repetition frequency of the laser with the modulation voltage, when the modulation voltage is in the voltage range of 0-60V, the controllable adjustment of the pulse width from 900-.
Fig. 8 shows the pulse output waveform diagrams of the laser under different modulation voltages, and the waveform sequences are uniform, so that the modulation voltage can effectively improve the output characteristics of the all-solid-state Q-switched laser.
Claims (10)
1. The utility model provides a controllable all solid-state passively Q-switched laser of voltage based on but graphite alkene saturable absorber device which characterized in that: the method comprises the following steps: the device comprises a pumping source, a coupling system, a gain medium, a graphene saturable absorption device and an optical resonant cavity; the pumping source is focused on a gain medium through a coupling system, and light emitted from the gain medium, the graphene saturable absorber and the optical resonant cavity act to output pulse laser.
2. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 1, wherein: the pumping source is a semiconductor laser coupled by an optical fiber.
3. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 1, wherein: the coupling system is a coupling lens group, and the pump light output by the pump source is coupled and focused on the gain medium through the coupling lens group 1: 1.
4. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 1, wherein: the gain medium is Nd: YVO4And (4) crystals.
5. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 4, wherein: YVO is the Nd4The input end face of the crystal is plated with an antireflection film and a high-reflection film, and the output end face of the crystal is plated with an antireflection film.
6. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 1, wherein: the graphene saturable absorber device has a field effect transistor structure and comprises a quartz glass sheet, a graphene film, a source electrode, a drain electrode, an alignment electrode, an IGZO and a Si3N4The graphene film is arranged on a quartz glass sheet, the source electrode and the drain electrode are formed on the graphene film according to a preset electrode pattern, and the Si is3N4Growing on the graphene film, the source electrode and the drain electrode, wherein the IGZO is grown on Si3N4The alignment electrode is formed on the IGZO according to a predetermined electrode pattern.
7. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 1, wherein: the optical resonant cavity comprises a folding mirror M1 and an output mirror M2, the folding mirror M1 is arranged in front of the graphene saturable absorber, the output mirror M2 is arranged behind the graphene saturable absorber, light emitted from the gain medium sequentially penetrates through the folding mirror M1 and the graphene saturable absorber and then is emitted to the output mirror M2, and pulse laser is output by the output mirror M2.
8. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 7, wherein: the folding mirror M1 is a plane concave mirror coated with a high reflection film and an antireflection film.
9. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 7, wherein: the output mirror M2 is coated with a high reflective film.
10. The voltage-controllable all-solid-state passive Q-switched laser based on the graphene saturable absorber device according to claim 7, wherein: an included angle exists between the distance from the input end face of the gain medium to the folding mirror M1 and the distance from the folding mirror M1 to the output mirror M2.
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Cited By (3)
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| CN113497405A (en) * | 2021-06-10 | 2021-10-12 | 张光举 | Antimony fluoride alkene passive Q-switched laser |
| CN114300926A (en) * | 2021-12-07 | 2022-04-08 | 南京信息工程大学 | Adjustable and controllable passive Q-switched pulse laser based on waveguide type graphene device |
| CN116454721A (en) * | 2023-06-16 | 2023-07-18 | 山东科技大学 | Super-surface-based 3-mu m-band function-adjustable saturable absorber |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114300926A (en) * | 2021-12-07 | 2022-04-08 | 南京信息工程大学 | Adjustable and controllable passive Q-switched pulse laser based on waveguide type graphene device |
| CN116454721A (en) * | 2023-06-16 | 2023-07-18 | 山东科技大学 | Super-surface-based 3-mu m-band function-adjustable saturable absorber |
| CN116454721B (en) * | 2023-06-16 | 2023-11-03 | 山东科技大学 | Super-surface-based 3-mu m-band function-adjustable saturable absorber |
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Application publication date: 20201120 |