CN116454721B - Metasurface-based saturable absorber with tunable 3μm band function - Google Patents
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- 239000006096 absorbing agent Substances 0.000 title claims abstract description 34
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 77
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- 239000000463 material Substances 0.000 claims abstract description 22
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Abstract
本发明公开了基于超表面的3μm波段功能可调的可饱和吸收体，属于激光技术领域，包括若干个周期性排列的结构单元，每个结构单元自上而下依次包括顶金电极、CaF2材料基底、金超表面微结构、石墨烯薄膜和底金电极，金超表面微结构为十字形，排列后形成的顶金电极层和底金电极层为回形结构。本发明可通过设计超表面的结构、形状、周期等参数，可精确调控超表面等离激元共振频率；与石墨烯等二维材料结合，通过外加偏置电压可调节超表面的等离激元共振效应，从而实现器件非线性光学特性的可调谐。
The invention discloses a 3 μm band function-adjustable saturable absorber based on metasurfaces, which belongs to the field of laser technology and includes several periodically arranged structural units. Each structural unit sequentially includes top gold electrodes, CaF 2 from top to bottom. Material substrate, gold metasurface microstructure, graphene film and bottom gold electrode. The gold metasurface microstructure is cross-shaped, and the top gold electrode layer and bottom gold electrode layer formed after arrangement are meander-shaped structures. The present invention can accurately control the plasmon resonance frequency of the metasurface by designing the structure, shape, period and other parameters of the metasurface; combined with two-dimensional materials such as graphene, the plasmon resonance frequency of the metasurface can be adjusted by applying an external bias voltage. element resonance effect, thereby achieving tunable nonlinear optical properties of the device.
Description
技术领域Technical field
本发明属于激光技术领域，具体涉及基于超表面的3μm波段功能可调的可饱和吸收体。The invention belongs to the field of laser technology, and specifically relates to a saturable absorber with adjustable 3 μm band functions based on metasurfaces.
背景技术Background technique
3μm波段超快激光已在环境监测、国防安全、中红外光学频率梳、超连续谱、高光子能量高次谐波产生、生物医学等方面展现出应用价值，发挥着不可替代作用。自2011年以来，Nature Photonics期刊多次推荐中红外激光研究方向，并在12年7月出版专刊“Mid-infrared photonics”，将2-20μm中红外激光看作是激光技术领域一个新的研究机遇。如何实现3μm波段超快激光的高功率运转对国防安全、民用及前沿基础科学研究等领域都有着极为重要的现实意义。The 3μm band ultrafast laser has shown application value in environmental monitoring, national defense security, mid-infrared optical frequency comb, supercontinuum, high photon energy high harmonic generation, biomedicine, etc., and plays an irreplaceable role. Since 2011, the journal Nature Photonics has repeatedly recommended the research direction of mid-infrared lasers, and published a special issue "Mid-infrared photonics" in July 2012, regarding 2-20 μm mid-infrared lasers as a new research opportunity in the field of laser technology. . How to achieve high-power operation of ultrafast lasers in the 3μm band is of extremely important practical significance to fields such as national defense and security, civilian and cutting-edge basic scientific research.
目前，获得3μm波段超快激光的技术主要有以下三大类，第一类是通过非线性频率变换技术，将成熟的1μm波段超快激光变频到3μm波段，主要包括光参量振荡和差频技术。第二类是基于Er3+、Dy3+及Ho3+离子掺杂的氟化物光纤锁模激光技术。2018年，西安光机所沈炎龙等也用SESAM实现了Er:ZBLAN光纤锁模，输出功率达到3 W，但锁模状态仅仅持续十几分钟，究其原因是高功率激光导致SESAM受到损坏。与SESAM相比，以石墨烯为代表的二维材料具有宽带光响应、快电子弛豫等优良特性，国内南京大学、上海交通大学、南开大学、电子科技大学等单位利用不同二维材料作为可饱和吸收体分别实现Er3+:ZBLAN光纤的3μm波段锁模激光运转，但脉冲宽度仅为皮秒量级。目前3μm波段光纤锁模还存在许多需要解决的问题。如掺Er3+、Dy3+及Ho3+离子的高质量氟化物光纤强烈依赖进口；没有性能稳定，损伤阈值高的中红外波段可饱和吸收体；受限于光纤的非线性效应及较低的损伤阈值，从光纤中实现大能量的锁模脉冲是比较困难的。第三类是Er3+、Ho3+等离子掺杂晶体为增益介质的大能量、高功率全固态锁模激光技术。相比于离子掺杂氟化物光纤的强烈依赖进口，国内许多单位如中科院上海光机所、硅酸盐所、安徽光机所、福建物构所、同济大学、宁波大学、江苏师大等单位都能够生长高质量的Er3+、Ho3+等掺杂的晶体或陶瓷，但目前还没有关于全固态连续波锁模激光的报道，因而一旦取得技术突破，结合晶体材料本身高损伤阈值、高热导率、可高掺杂等优势，可实现大能量、高功率的中红外超快激光输出。At present, the technologies for obtaining ultrafast lasers in the 3μm band mainly fall into the following three categories. The first type is to convert the mature 1μm band ultrafast laser to the 3μm band through nonlinear frequency conversion technology, which mainly includes optical parametric oscillation and difference frequency technology. . The second category is fluoride fiber mode-locked laser technology based on Er 3+ , Dy 3+ and Ho 3+ ion doping. In 2018, Shen Yanlong and others from the Xi'an Institute of Optics and Mechanics also used SESAM to achieve Er:ZBLAN fiber mode locking, with the output power reaching 3 W. However, the mode locking state only lasted for more than ten minutes. The reason was that the high-power laser caused damage to the SESAM. Compared with SESAM, two-dimensional materials represented by graphene have excellent properties such as broadband optical response and fast electron relaxation. Domestic institutions such as Nanjing University, Shanghai Jiao Tong University, Nankai University, and University of Electronic Science and Technology of China use different two-dimensional materials as possible The saturable absorbers respectively realize the 3μm band mode-locked laser operation of Er 3+ :ZBLAN fiber, but the pulse width is only on the order of picoseconds. At present, there are still many problems that need to be solved in fiber mode locking in the 3μm band. For example, high-quality fluoride optical fibers doped with Er 3+ , Dy 3+ and Ho 3+ ions are strongly dependent on imports; they do not have stable performance and high damage threshold saturable absorbers in the mid-infrared band; they are limited by the nonlinear effects of optical fibers and their relatively large size. Due to the low damage threshold, it is difficult to achieve high-energy mode-locked pulses from optical fibers. The third category is high-energy, high-power all-solid-state mode-locked laser technology using Er 3+ and Ho 3+ plasma-doped crystals as gain media. Compared with the strong reliance on imports of ion-doped fluoride optical fibers, many domestic units such as Shanghai Institute of Optics and Mechanics of the Chinese Academy of Sciences, Institute of Ceramics, Anhui Institute of Optics and Mechanics, Fujian Institute of Physics, Tongji University, Ningbo University, Jiangsu Normal University and other units Both can grow high-quality Er 3+ , Ho 3+ and other doped crystals or ceramics. However, there are currently no reports on all-solid-state continuous wave mode-locked lasers. Therefore, once a technological breakthrough is achieved, combined with the high damage threshold of the crystal material itself, With the advantages of high thermal conductivity and high doping capability, it can achieve high-energy, high-power mid-infrared ultrafast laser output.
超表面是由亚波长长度的金属或介质微结构周期性排列形成的人工材料，通过设计优化微结构参数实现对入射电磁波的振幅、相位、极化状态等信息的操控。对于单个金属微结构而言，在外部电磁场驱动时，其表面的自由电子也会随之发生集体振荡并与附近的电磁场相互作用，会产生近场增强现象，这称之为表面等离激元共振。等离激元共振动力学主要是由非平衡态电子及声子的运动来控制，与块状材料相比，微结构的等离激光共振会产生较强的非线性光学效应。金超表面器件具有非常好的饱和吸收特性和快的响应时间，为超表面的非线性光学特性来自于微结构之间的等离激元谐振，故可以设计微观结构的尺寸、形状、周期等结构参数使其共振频率位于3μm波段。这种新颖的、可精确调控的超表面饱和吸收器件也迅速得到国内外的广泛关注。Metasurfaces are artificial materials formed by periodic arrangements of metal or dielectric microstructures with sub-wavelength lengths. By designing and optimizing the microstructure parameters, the amplitude, phase, polarization state and other information of incident electromagnetic waves can be controlled. For a single metal microstructure, when driven by an external electromagnetic field, the free electrons on its surface will also collectively oscillate and interact with the nearby electromagnetic field, resulting in a near-field enhancement phenomenon, which is called surface plasmons. resonance. Plasmon resonance dynamics is mainly controlled by the movement of non-equilibrium electrons and phonons. Compared with bulk materials, microstructured plasmon resonance will produce stronger nonlinear optical effects. Gold metasurface devices have very good saturation absorption characteristics and fast response times. The nonlinear optical properties of the metasurface come from the plasmon resonance between microstructures, so the size, shape, period, etc. of the microstructures can be designed. The structural parameters make its resonance frequency located in the 3μm band. This novel, precisely controllable metasurface saturable absorption device has quickly attracted widespread attention at home and abroad.
基于以上技术构想，本发明提出采用超表面作为饱和吸收体来实现3μm波段全固态、高功率锁模激光的新技术方案。揭示超表面结构与非线性可饱和吸收参数之间的内在联系，制备高损伤阈值、饱和吸收参数优良的超表面可饱和吸收体，并将其应用到3μm波段全固态锁模激光器中，实现高功率、高稳定性锁模脉冲输出，突破当前中红外波段可饱和吸收器件的制备技术复杂、损伤阈值低、可饱和参数无法精确控制等难题。Based on the above technical conception, the present invention proposes a new technical solution using metasurfaces as saturable absorbers to realize all-solid-state, high-power mode-locked lasers in the 3 μm band. Reveal the intrinsic relationship between metasurface structures and nonlinear saturable absorption parameters, prepare metasurface saturable absorbers with high damage thresholds and excellent saturable absorption parameters, and apply them to 3 μm band all-solid-state mode-locked lasers to achieve high performance. The high-power, high-stability mode-locked pulse output breaks through the current problems of complex preparation technology, low damage threshold, and inability to accurately control saturable parameters of saturable absorption devices in the mid-infrared band.
发明内容Contents of the invention
针对现有技术中存在的上述问题，本发明提出了基于超表面的3μm波段功能可调的可饱和吸收体，设计合理，解决了现有技术的不足，具有良好的效果。In view of the above-mentioned problems existing in the prior art, the present invention proposes a saturable absorber with adjustable 3 μm band functions based on metasurfaces. The design is reasonable, solves the shortcomings of the prior art, and has good effects.
基于超表面的3μm波段功能可调的可饱和吸收体，包括若干个周期性排列的结构单元，每个结构单元自上而下依次包括顶金电极、CaF2材料基底、金超表面微结构、石墨烯薄膜和底金电极；The 3μm band function-tunable saturable absorber based on the metasurface includes several periodically arranged structural units. From top to bottom, each structural unit includes a top gold electrode, a CaF 2 material substrate, a gold metasurface microstructure, Graphene film and base gold electrode;
所述金超表面微结构为十字形，其长度为0.3-0.5μm，单边宽度为0.1-0.2μm，厚度为0.1 μm，相邻的两个金超表面微结构之间的距离为0.5-0.6μm。The gold metasurface microstructure is cross-shaped, with a length of 0.3-0.5 μm, a single side width of 0.1-0.2 μm, and a thickness of 0.1 μm. The distance between two adjacent gold metasurface microstructures is 0.5-0.5 μm. 0.6μm.
进一步地，若干个顶金电极和底金电极排列在一起，分别形成顶金电极层和底金电极层，对两者中间部分进行挖空，得到成回形结构的顶金电极层和底金电极层。Further, several top gold electrodes and bottom gold electrodes are arranged together to form a top gold electrode layer and a bottom gold electrode layer respectively, and the middle parts of the two are hollowed out to obtain a top gold electrode layer and a bottom gold electrode with a ring-shaped structure. electrode layer.
进一步地，所述金超表面微结构的长度为0.4μm，单边宽度为0.1μm，厚度为0.1μm，相邻两个金超表面之间的距离为0.6μm。Further, the length of the gold metasurface microstructure is 0.4 μm, the single-side width is 0.1 μm, the thickness is 0.1 μm, and the distance between two adjacent gold metasurfaces is 0.6 μm.
进一步地，所述CaF2材料基底的折射率为1.43，边长为0.8-1.2μm，厚度为4-6μm。Further, the CaF 2 material substrate has a refractive index of 1.43, a side length of 0.8-1.2 μm, and a thickness of 4-6 μm.
进一步地，所述CaF2材料基底的边长为1μm，厚度为5μm。Further, the side length of the CaF 2 material substrate is 1 μm and the thickness is 5 μm.
进一步地，所述石墨烯薄膜的边长为0.9-1.1μm，厚度为0.4-0.8μm。Further, the side length of the graphene film is 0.9-1.1 μm, and the thickness is 0.4-0.8 μm.
进一步地，所述石墨烯薄膜的边长为1μm，厚度为0.5μm。Further, the side length of the graphene film is 1 μm and the thickness is 0.5 μm.
进一步地，所述顶金电极和底金电极的厚度为3-4μm，边长为0.9-1.1μm。Further, the thickness of the top gold electrode and the bottom gold electrode is 3-4 μm, and the side length is 0.9-1.1 μm.
进一步地，所述顶金电极和底金电极的厚度为4μm，边长为1μm。Further, the thickness of the top gold electrode and the bottom gold electrode is 4 μm, and the side length is 1 μm.
进一步地，将该可饱和吸收体放入激光谐振腔中，在顶金电极层和底金电极层上施加偏置电压，通过改变该偏置电压调节费米能级和介电常数，进而调节等离激元谐振频率和非平衡态电子及声子的运动，从而实现可饱和吸收体的非线性光学特性的可调谐，使可饱和吸收体共振频率位于3μm波段，从而获得3μm波段脉冲激光。Further, the saturable absorber is placed in the laser resonant cavity, a bias voltage is applied to the top gold electrode layer and the bottom gold electrode layer, and the Fermi level and dielectric constant are adjusted by changing the bias voltage, thereby adjusting The plasmon resonant frequency and the movement of non-equilibrium electrons and phonons realize the tunability of the nonlinear optical properties of the saturable absorber, so that the resonant frequency of the saturable absorber is located in the 3 μm band, thereby obtaining a 3 μm band pulse laser.
本发明带来的有益技术效果：Beneficial technical effects brought by the present invention:
（1）本发明可通过设计超表面的结构、形状、周期等参数，可精确调控超表面等离激元共振频率；与石墨烯等二维材料结合，通过外加偏置电压可调节超表面的等离激元共振效应，从而实现器件非线性光学特性的可调谐；(1) The present invention can accurately control the plasmon resonance frequency of the metasurface by designing the structure, shape, period and other parameters of the metasurface; combined with two-dimensional materials such as graphene, the metasurface can be adjusted by applying an external bias voltage. Plasmon resonance effect, thereby achieving tunable nonlinear optical properties of the device;
（2）本发明相对于应用于3μm波段的SESAM器件，具有高损伤阈值的优势，非常有助于获得高功率锁模的激光输出；(2) Compared with SESAM devices applied in the 3 μm band, this invention has the advantage of high damage threshold, which is very helpful in obtaining high-power mode-locked laser output;
（3）石墨烯薄膜使用化学气相沉积法制备，具有高的沉淀速度，可以在常压或者真空条件下进行，相对于物理气相沉积法更简单、经济；(3) Graphene films are prepared using chemical vapor deposition, which has a high precipitation rate and can be carried out under normal pressure or vacuum conditions. It is simpler and more economical than physical vapor deposition;
（4）本发明的各元件组合紧凑，体积小巧，有助于简化获得脉冲激光装置体积。(4) The components of the present invention are compact in combination and small in size, which helps to simplify the acquisition of the volume of the pulse laser device.
附图说明Description of drawings
图1为本发明中单个结构单元的结构示意图；Figure 1 is a schematic structural diagram of a single structural unit in the present invention;
其中，1-顶金电极；2-CaF2材料基底；3-金超表面微结构；4-石墨烯薄膜；5-底金电极。Among them, 1-top gold electrode; 2-CaF 2 material substrate; 3-gold metasurface microstructure; 4-graphene film; 5-bottom gold electrode.
图2为本发明中可饱和吸收体的结构示意图；Figure 2 is a schematic structural diagram of the saturable absorber in the present invention;
其中，6-顶金电极层；7- CaF2材料基底层；8-石墨烯薄膜层；9-底金电极层。Among them, 6-top gold electrode layer; 7-CaF 2 material base layer; 8-graphene film layer; 9-bottom gold electrode layer.
图3为本发明中多个金超表面微结构和石墨烯薄膜层的俯视图。Figure 3 is a top view of multiple gold metasurface microstructures and graphene film layers in the present invention.
图4为本发明中顶金电极层的俯视图。Figure 4 is a top view of the gold electrode layer in the present invention.
图5为本发明中十字形金超表面微结构的示意图。Figure 5 is a schematic diagram of the cross-shaped gold metasurface microstructure in the present invention.
图6为本发明实施例1中可饱和吸收体对不同波长光透射系数。Figure 6 shows the transmittance coefficient of the saturable absorber to light of different wavelengths in Embodiment 1 of the present invention.
具体实施方式Detailed ways
下面结合具体实施例对本发明的具体实施方式做进一步说明：The specific implementation modes of the present invention will be further described below in conjunction with specific examples:
基于超表面的3μm波段功能可调的可饱和吸收体，包括若干个周期性排列的结构单元，如图1所示，每个结构单元自上而下依次包括顶金电极1、CaF2材料基底2、金超表面微结构3、石墨烯薄膜4和底金电极5；The saturable absorber with adjustable 3μm band function based on metasurfaces includes several periodically arranged structural units, as shown in Figure 1. Each structural unit includes top gold electrode 1 and CaF 2 material substrate from top to bottom. 2. Gold metasurface microstructure 3, graphene film 4 and bottom gold electrode 5;
如图2所示，若干个结构单元排列在一起，自上而下依次形成顶金电极层6、CaF2材料基底层7、石墨烯薄膜层8和底金电极层9，如图3所示，石墨烯薄膜层上周期性排列有若干个金超表面微结构3，如图4所示，对顶金电极层6和底金电极层9中间部分进行挖空，得到成回形结构的顶金电极层6和底金电极层9。As shown in Figure 2, several structural units are arranged together to form a top gold electrode layer 6, a CaF 2 material base layer 7, a graphene film layer 8 and a bottom gold electrode layer 9 from top to bottom, as shown in Figure 3 , there are several gold metasurface microstructures 3 periodically arranged on the graphene film layer. As shown in Figure 4, the middle parts of the top gold electrode layer 6 and the bottom gold electrode layer 9 are hollowed out to obtain a top gold electrode layer with a ring-shaped structure. Gold electrode layer 6 and bottom gold electrode layer 9.
如图5所示，金超表面微结构3为十字形，其长度（单元周期）L为0.3-0.5μm，单边宽度W为0.1-0.2μm，厚度h1为0.1μm，相邻的两个金超表面微结构之间的距离d为0.5-0.6μm。As shown in Figure 5, the gold metasurface microstructure 3 is cross-shaped, with a length (unit period) L of 0.3-0.5 μm, a single-side width W of 0.1-0.2 μm, a thickness h1 of 0.1 μm, and two adjacent The distance d between gold metasurface microstructures is 0.5-0.6 μm.
CaF2材料基底2的折射率n为1.43，边长（单元周期）P为0.8-1.2μm，厚度h2为4-6μm。The refractive index n of the CaF 2 material substrate 2 is 1.43, the side length (unit period) P is 0.8-1.2 μm, and the thickness h2 is 4-6 μm.
石墨烯薄膜4的边长（单元周期）P为0.9-1.1μm，厚度h3为0.4-0.8μm。The side length (unit period) P of the graphene film 4 is 0.9-1.1 μm, and the thickness h3 is 0.4-0.8 μm.
顶金电极1和底金电极5（单元周期）的厚度h4为3-4μm，边长P为0.9-1.1μm。The thickness h4 of the top gold electrode 1 and the bottom gold electrode 5 (unit period) is 3-4 μm, and the side length P is 0.9-1.1 μm.
该饱和吸收体的参数如表1所示：The parameters of the saturated absorber are shown in Table 1:
表1可饱和吸收体的相关参数；Table 1 Relevant parameters of saturable absorbers;
。 .
上述可饱和吸收体的制备方法具体为，使用掺杂的CaF2作为基底，在其上表面采用光刻或电子束曝光技术制备金超表面微结构，然后将石墨烯薄膜放置到金超表面上，最后石墨烯薄膜顶部和CaF2材料基底底部蒸镀上金电极，完成金-石墨烯可饱和吸收体的制备。The preparation method of the above-mentioned saturable absorber is specifically to use doped CaF 2 as a substrate, use photolithography or electron beam exposure technology to prepare a gold metasurface microstructure on its upper surface, and then place a graphene film on the gold metasurface , and finally a gold electrode was evaporated on the top of the graphene film and the bottom of the CaF 2 material substrate to complete the preparation of the gold-graphene saturable absorber.
其工作方法为：将该可饱和吸收体放入激光谐振腔中，在顶金电极层和底金电极层上施加偏置电压，通过改变该偏置电压调节费米能级和介电常数，进而调节等离激元谐振频率和非平衡态电子及声子的运动，从而实现可饱和吸收体的非线性光学特性的可调谐，使可饱和吸收体共振频率位于3μm波段，从而获得3μm波段脉冲激光；The working method is: put the saturable absorber into the laser resonant cavity, apply a bias voltage on the top gold electrode layer and the bottom gold electrode layer, and adjust the Fermi level and dielectric constant by changing the bias voltage. Then, the plasmon resonance frequency and the movement of non-equilibrium electrons and phonons are adjusted to realize the tunability of the nonlinear optical properties of the saturable absorber, so that the resonance frequency of the saturable absorber is located in the 3 μm band, thereby obtaining a 3 μm band pulse. laser;
其中，非平衡态就是除平衡态以外的定常状态，包括周期运动状态(即振荡态)、概周期状态（即遍历态）以及混沌态，声子（Phonon），即“晶格振动的简正模能量量子”。Among them, non-equilibrium state is a steady state other than equilibrium state, including periodic motion state (i.e. oscillatory state), almost periodic state (i.e. ergodic state) and chaotic state, phonon (Phonon), that is, "normal mode energy of lattice vibration" quantum".
实施例1Example 1
根据上述制备方法制备一个可饱和吸收体，金超表面微结构的长度L为0.4μm，单边宽度W为0.1μm，厚度h1=0.1μm，两十字形超表面微结构的间隔d为0.6μm，且沿着器件结构单元平行放置；CaF2材料基底的折射率n为1.43，边长P=1μm，厚度h2=5μm；石墨烯薄膜的边长P=1μm，厚度h3=0.3μm；顶金电极和底金电极的边长P=1μm，厚度h4=4μm。A saturable absorber is prepared according to the above preparation method. The length L of the gold metasurface microstructure is 0.4 μm, the single-side width W is 0.1 μm, the thickness h1 = 0.1 μm, and the distance d between two cross-shaped metasurface microstructures is 0.6 μm. , and placed parallel to the device structural unit; the refractive index n of the CaF 2 material substrate is 1.43, the side length P=1μm, and the thickness h2=5μm; the side length of the graphene film is P=1μm, and the thickness h3=0.3μm; top gold The side length of the electrode and the bottom gold electrode is P=1μm, and the thickness h4=4μm.
将结构单元呈矩形状排列，如图3所示，其中金超表面微结构间隔d为0.6μm，CaF2材料基底层边长为2cm，石墨烯薄膜层边长为2cm，顶金电极层和底金电极层为回形，外边长为2cm，内边长为1.5cm。The structural units are arranged in a rectangular shape, as shown in Figure 3, where the gold metasurface microstructure spacing d is 0.6 μm, the CaF 2 material base layer has a side length of 2cm, the graphene film layer has a side length of 2cm, and the top gold electrode layer and The bottom gold electrode layer is loop-shaped, with an outer side length of 2cm and an inner side length of 1.5cm.
该实施例中，可饱和吸收体在实现可饱和吸收功能时，对3μm波段光透过率为0.98，如图6所示。In this embodiment, when the saturable absorber realizes the saturable absorption function, the light transmittance in the 3 μm band is 0.98, as shown in Figure 6 .
当然，上述说明并非是对本发明的限制，本发明也并不仅限于上述举例，本技术领域的技术人员在本发明的实质范围内所做出的变化、改型、添加或替换，也应属于本发明的保护范围。Of course, the above description is not a limitation of the present invention, and the present invention is not limited to the above examples. Changes, modifications, additions or substitutions made by those skilled in the art within the essential scope of the present invention should also fall within the scope of the present invention. protection scope of the invention.
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