CN116454721B - Super-surface-based 3-mu m-band function-adjustable saturable absorber - Google Patents
Super-surface-based 3-mu m-band function-adjustable saturable absorber Download PDFInfo
- Publication number
- CN116454721B CN116454721B CN202310712788.8A CN202310712788A CN116454721B CN 116454721 B CN116454721 B CN 116454721B CN 202310712788 A CN202310712788 A CN 202310712788A CN 116454721 B CN116454721 B CN 116454721B
- Authority
- CN
- China
- Prior art keywords
- super
- gold
- electrode layer
- gold electrode
- saturable absorber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000006096 absorbing agent Substances 0.000 title claims abstract description 36
- 239000010931 gold Substances 0.000 claims abstract description 81
- 229910052737 gold Inorganic materials 0.000 claims abstract description 81
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 80
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 230000003287 optical effect Effects 0.000 claims abstract description 11
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 9
- 229910004261 CaF 2 Inorganic materials 0.000 claims description 8
- 230000033001 locomotion Effects 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 14
- 238000005516 engineering process Methods 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000000835 fiber Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000005371 ZBLAN Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007123 defense Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000012237 artificial material Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Lasers (AREA)
Abstract
The invention discloses a 3 mu m wave band function adjustable saturated absorber based on a super surface, which belongs to the technical field of laser and comprises a plurality of periodically arranged structural units, wherein each structural unit sequentially comprises a top gold electrode and CaF from top to bottom 2 The material comprises a material substrate, a gold super-surface microstructure, a graphene film and a bottom gold electrode, wherein the gold super-surface microstructure is cross-shaped, and a top gold electrode layer and a bottom gold electrode layer formed after arrangement are of a loop-shaped structure. The invention can accurately regulate and control the resonance frequency of the super-surface plasmon by designing parameters such as the structure, the shape, the period and the like of the super-surface; and combining with graphene and other two-dimensional materials, and adjusting the plasmon resonance effect of the super surface by externally applying bias voltage, so that the tunable nonlinear optical characteristic of the device is realized.
Description
Technical Field
The invention belongs to the technical field of laser, and particularly relates to a 3-mu m wave band function-adjustable saturable absorber based on a super surface.
Background
The 3 mu m wave band ultrafast laser has shown application value in the aspects of environmental monitoring, national defense safety, mid-infrared optical frequency comb, supercontinuum, high photon energy higher harmonic generation, biomedicine and the like, and plays an irreplaceable role. Since 2011, the research direction of Mid-infrared lasers was recommended for many times by Nature Photonics journal, and the edition of special journal "Mid-infrared Photonics" was released 7 months in 12 years, and 2-20 μm Mid-infrared lasers were regarded as a new research opportunity in the laser technology field. How to realize the high-power operation of the ultra-fast laser with the wave band of 3 mu m has extremely important practical significance for the fields of national defense safety, civil use, leading edge basic scientific research and the like.
At present, the technology for obtaining 3 mu m wave band ultrafast laser is mainlyThe first class is to convert mature 1 mu m-band ultrafast laser into 3 mu m-band by nonlinear frequency conversion technology, and mainly comprises optical parametric oscillation and difference frequency technology. The second category is based on Er 3+ 、Dy 3+ Ho 3+ Ion doped fluoride fiber mode-locked laser technology. In 2018, the SeSAM adopted by the SeSAM institute Shen Yanlong realizes the mode locking of Er-ZBLAN optical fibers, the output power reaches 3W, but the mode locking state only lasts for more than ten minutes, and the reason is that the SESAM is damaged due to high-power laser. Compared with SESAM, the two-dimensional material represented by graphene has excellent characteristics of broadband light response, fast electron relaxation and the like, and uses different two-dimensional materials as saturable absorbers for realizing Er respectively in units of university of Nanjing, shanghai transportation university, nanking university, electronic science and technology university and the like in China 3+ The 3 mu m band mode-locked laser of the ZBLAN optical fiber operates, but the pulse width is only in the order of picoseconds. At present, the mode locking of the 3 mu m-band optical fiber has a plurality of problems to be solved. Such as Er-doped 3+ 、Dy 3+ Ho 3+ High quality fluoride fibers of ions are strongly dependent on the entrance; no middle-infrared band saturated absorber with stable performance and high damage threshold; due to the nonlinear effects of the fiber and the low damage threshold, it is difficult to achieve high energy mode-locked pulses from the fiber. The third class is Er 3+ 、Ho 3+ The plasma doped crystal is a high-energy and high-power all-solid-state mode-locked laser technology of a gain medium. Compared with the strong dependence import of ion doped fluoride optical fiber, a plurality of domestic units such as Shanghai optical machine institute of Chinese academy of sciences, silicate institute, anhui optical machine institute, fujian architecture institute, university of same university of Ningbo university, jiangsu Master and other units can grow high-quality Er 3+ 、Ho 3+ The isodoped crystal or ceramic has no report on all-solid-state continuous wave mode-locked laser at present, so that once the technical breakthrough is achieved, the advantages of high damage threshold, high heat conductivity, high doping and the like of the crystal material are combined, and the output of high-energy and high-power mid-infrared ultrafast laser can be realized.
The super surface is an artificial material formed by periodically arranging metal or medium microstructures with sub-wavelength lengths, and the control of the information such as amplitude, phase and polarization state of the incident electromagnetic wave is realized by designing and optimizing microstructure parameters. For a single metal microstructure, when driven by an external electromagnetic field, free electrons on the surface of the microstructure also oscillate together and interact with nearby electromagnetic fields, and a near field enhancement phenomenon, called surface plasmon resonance, occurs. Plasmon resonance dynamics is mainly controlled by the motion of non-equilibrium electrons and phonons, and compared with bulk materials, plasmon resonance of microstructures can generate stronger nonlinear optical effects. The gold super-surface device has very good saturated absorption characteristic and quick response time, and is characterized in that the nonlinear optical characteristic of the super-surface comes from plasmon resonance among microstructures, so that the size, shape, period and other structural parameters of the microstructures can be designed to enable the resonance frequency to be located in a 3 mu m wave band. The novel super-surface saturated absorption device capable of being accurately regulated and controlled also rapidly gets wide attention at home and abroad.
Based on the technical conception, the invention provides a novel technical scheme for realizing 3 mu m-band all-solid-state high-power mode-locked laser by adopting the super surface as a saturated absorber. The inherent relation between the super-surface structure and the nonlinear saturable absorption parameters is disclosed, the super-surface saturable absorber with high damage threshold and excellent saturation absorption parameters is prepared, and is applied to the 3 mu m-band all-solid-state mode-locked laser, so that high-power and high-stability mode-locked pulse output is realized, and the problems that the preparation technology of the current mid-infrared band saturable absorption device is complex, the damage threshold is low, the saturable parameters cannot be accurately controlled and the like are overcome.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the saturated absorber with adjustable 3 mu m wave band function based on the super surface, which has reasonable design, solves the defects in the prior art and has good effect.
The 3 μm wave band function adjustable saturated absorber based on the super surface comprises a plurality of periodically arranged structural units, each structural unit comprises a top gold electrode and CaF from top to bottom 2 The graphene material comprises a material substrate, a gold super-surface microstructure, a graphene film and a gold-based electrode;
the gold super-surface microstructure is cross-shaped, the length of the gold super-surface microstructure is 0.3-0.5 mu m, the unilateral width of the gold super-surface microstructure is 0.1-0.2 mu m, the thickness of the gold super-surface microstructure is 0.1 mu m, and the distance between two adjacent gold super-surface microstructures is 0.5-0.6 mu m.
Further, a plurality of top gold electrodes and bottom gold electrodes are arranged together to form a top gold electrode layer and a bottom gold electrode layer respectively, and the middle parts of the top gold electrode layer and the bottom gold electrode layer are hollowed out to obtain the top gold electrode layer and the bottom gold electrode layer which form the loop-shaped structure.
Further, the length of the gold super-surface microstructure is 0.4 μm, the unilateral width is 0.1 μm, the thickness is 0.1 μm, and the distance between two adjacent gold super-surfaces is 0.6 μm.
Further, the CaF 2 The refractive index of the material substrate is 1.43, the side length is 0.8-1.2 μm, and the thickness is 4-6 μm.
Further, the CaF 2 The side length of the material substrate was 1 μm and the thickness was 5. Mu.m.
Further, the side length of the graphene film is 0.9-1.1 mu m, and the thickness of the graphene film is 0.4-0.8 mu m.
Further, the graphene film has a side length of 1 μm and a thickness of 0.5 μm.
Further, the thickness of the top gold electrode and the bottom gold electrode is 3-4 mu m, and the side length is 0.9-1.1 mu m.
Further, the thickness of the top gold electrode and the bottom gold electrode is 4 μm, and the side length is 1 μm.
Further, the saturable absorber is placed in a laser resonant cavity, bias voltage is applied to the top gold electrode layer and the bottom gold electrode layer, fermi level and dielectric constant are adjusted through changing the bias voltage, and then plasmon resonance frequency and movement of unbalanced state electrons and phonons are adjusted, so that the nonlinear optical characteristic of the saturable absorber is tunable, the resonance frequency of the saturable absorber is located in a 3-mu m wave band, and the 3-mu m wave band pulse laser is obtained.
The invention has the beneficial technical effects that:
(1) The invention can accurately regulate and control the resonance frequency of the super-surface plasmon by designing parameters such as the structure, the shape, the period and the like of the super-surface; the tunable nonlinear optical characteristic of the device is realized by combining the device with two-dimensional materials such as graphene and the like and adjusting the plasmon resonance effect of the super surface through externally applied bias voltage;
(2) Compared with a SESAM device applied to a 3 mu m wave band, the invention has the advantage of high damage threshold value, and is very beneficial to obtaining the laser output of high-power mode locking;
(3) The graphene film is prepared by a chemical vapor deposition method, has high precipitation speed, can be performed under normal pressure or vacuum conditions, and is simpler and more economical than a physical vapor deposition method;
(4) The invention has compact combination of elements and small volume, and is beneficial to simplifying the volume of the pulse laser device.
Drawings
FIG. 1 is a schematic diagram of the structure of a single structural unit of the present invention;
wherein, 1-top gold electrode; 2-CaF 2 A material substrate; 3-gold ultra-surface microstructure; 4-graphene thin films; 5-bottom gold electrode.
FIG. 2 is a schematic structural view of a saturable absorber according to the present invention;
wherein, 6-top gold electrode layer; 7-CaF 2 A base layer of material; 8-graphene thin film layers; 9-a bottom gold electrode layer.
FIG. 3 is a top view of a plurality of gold subsurface microstructures and graphene film layers according to the present invention.
Fig. 4 is a top view of a top gold electrode layer according to the present invention.
FIG. 5 is a schematic view of a cross-shaped gold super-surface microstructure according to the present invention.
FIG. 6 shows the transmission coefficients of the saturable absorber for different wavelengths in example 1 of the present invention.
Detailed Description
The following is a further description of embodiments of the invention, in conjunction with the specific examples:
a3 μm band functionally tunable saturable absorber based on a super surface comprises a plurality of periodically arranged structural units, each of which is self-contained as shown in FIG. 1Comprises a top gold electrode 1 and CaF from top to bottom 2 The material comprises a material substrate 2, a gold super-surface microstructure 3, a graphene film 4 and a bottom gold electrode 5;
as shown in FIG. 2, a plurality of structural units are arranged together to form a top gold electrode layer 6 and CaF from top to bottom 2 The material basal layer 7, the graphene film layer 8 and the bottom gold electrode layer 9 are shown in fig. 3, a plurality of gold super-surface microstructures 3 are periodically arranged on the graphene film layer, and the middle parts of the top gold electrode layer 6 and the bottom gold electrode layer 9 are hollowed out to obtain the top gold electrode layer 6 and the bottom gold electrode layer 9 which form a loop structure as shown in fig. 4.
As shown in FIG. 5, the gold super-surface microstructure 3 is cross-shaped, the length (unit period) L is 0.3-0.5 μm, the single-side width W is 0.1-0.2 μm, the thickness h1 is 0.1 μm, and the distance d between two adjacent gold super-surface microstructures is 0.5-0.6 μm.
CaF 2 The refractive index n of the material base 2 is 1.43, the side length (cell period) P is 0.8 to 1.2 μm, and the thickness h2 is 4 to 6 μm.
The side length (unit period) P of the graphene film 4 is 0.9-1.1 μm, and the thickness h3 is 0.4-0.8 μm.
The thickness h4 of the top gold electrode 1 and the bottom gold electrode 5 (unit period) is 3-4 μm, and the side length P is 0.9-1.1 μm.
The parameters of the saturated absorber are shown in table 1:
table 1 parameters related to the saturable absorber;
。
the method for preparing the saturable absorber comprises the steps of using doped CaF 2 As a substrate, preparing a gold super-surface microstructure on the upper surface by adopting a photoetching or electron beam exposure technology, then placing a graphene film on the gold super-surface, and finally placing the top of the graphene film and CaF 2 And (3) evaporating a gold electrode on the bottom of the material substrate to finish the preparation of the gold-graphene saturable absorber.
The working method comprises the following steps: placing the saturable absorber into a laser resonant cavity, applying bias voltages on a top gold electrode layer and a bottom gold electrode layer, and adjusting the fermi level and the dielectric constant by changing the bias voltages so as to adjust the plasmon resonance frequency and the movement of unbalanced electrons and phonons, thereby realizing the tuning of the nonlinear optical characteristics of the saturable absorber, enabling the resonance frequency of the saturable absorber to be positioned in a 3 mu m wave band and further obtaining 3 mu m wave band pulse laser;
the unbalanced state is a steady state except for the balanced state, and includes a periodic motion state (i.e. an oscillation state), a quasi-periodic state (i.e. a traversal state) and a chaotic state, phonon (Phonon), namely "a positive mode energy quantum of lattice vibration".
Example 1
According to the preparation method, a saturable absorber is prepared, the length L of the gold super-surface microstructure is 0.4 mu m, the unilateral width W is 0.1 mu m, the thickness h1=0.1 mu m, the interval d between the two cross-shaped super-surface microstructures is 0.6 mu m, and the two cross-shaped super-surface microstructures are arranged in parallel along a device structure unit; caF (CaF) 2 The refractive index n of the material substrate is 1.43, the side length p=1 μm, and the thickness h2=5 μm; the side length p=1 μm of the graphene film, and the thickness h3=0.3 μm; the side lengths p=1 μm of the top and bottom gold electrodes and the thickness h4=4 μm.
The structural units are arranged in a rectangular shape as shown in FIG. 3, wherein the gold super-surface microstructure spacing d is 0.6 μm, caF 2 The side length of the material basal layer is 2cm, the side length of the graphene film layer is 2cm, the top gold electrode layer and the bottom gold electrode layer are in a shape of a circle, the outer side length is 2cm, and the inner side length is 1.5cm.
In this example, the saturable absorber has a light transmittance of 0.98 for a 3 μm band when the saturable absorber is realized, as shown in fig. 6.
It should be understood that the above description is not intended to limit the invention to the particular embodiments disclosed, but to limit the invention to the particular embodiments disclosed, and that the invention is not limited to the particular embodiments disclosed, but is intended to cover modifications, adaptations, additions and alternatives falling within the spirit and scope of the invention.
Claims (7)
1. A3 mu m wave band function adjustable saturated absorber based on super surface is characterized by comprising a plurality ofPeriodically arranged structural units, each structural unit sequentially comprises a top gold electrode and CaF from top to bottom 2 The graphene material comprises a material substrate, a gold super-surface microstructure, a graphene film and a gold-based electrode;
the gold super-surface microstructure is cross-shaped, the length of the gold super-surface microstructure is 0.3-0.5 mu m, the unilateral width is 0.1-0.2 mu m, the thickness is 0.1 mu m, and the distance between two adjacent gold super-surface microstructures is 0.5-0.6 mu m;
the top gold electrode layer and the bottom gold electrode layer are formed by hollowing out the middle parts of the top gold electrode layer and the bottom gold electrode layer respectively, so that the top gold electrode layer and the bottom gold electrode layer with the shape of a loop are obtained;
the CaF is 2 The refractive index of the material substrate is 1.43, the side length is 0.8-1.2 mu m, and the thickness is 4-6 mu m;
the saturable absorber is placed in a laser resonant cavity, bias voltage is applied to a top gold electrode layer and a bottom gold electrode layer, fermi energy level and dielectric constant are adjusted through changing the bias voltage, and then plasmon resonance frequency and unbalanced state electron and phonon movement are adjusted, so that the nonlinear optical characteristic of the saturable absorber is tunable, the resonance frequency of the saturable absorber is located in a 3 mu m wave band, and the 3 mu m wave band pulse laser is obtained.
2. The super-surface based 3 μm band functionally tunable saturable absorber of claim 1, wherein the gold super-surface microstructure has a length of 0.4 μm, a single side width of 0.1 μm, a thickness of 0.1 μm, and a distance between two adjacent gold super-surfaces of 0.6 μm.
3. The super-surface based 3 μm band functionally tunable saturable absorber of claim 1, wherein the CaF 2 The side length of the material substrate was 1 μm and the thickness was 5. Mu.m.
4. The super-surface based 3 μm band function-tunable saturable absorber of claim 1, wherein the graphene film has a side length of 0.9-1.1 μm and a thickness of 0.4-0.8 μm.
5. The super-surface based 3 μm band functionally tunable saturable absorber of claim 4, wherein the graphene film has a side length of 1 μm and a thickness of 0.5 μm.
6. The super-surface based 3 μm band functionally tunable saturable absorber of claim 1, wherein the top and bottom gold electrodes have a thickness of 3-4 μm and a side length of 0.9-1.1 μm.
7. The super-surface based 3 μm band functionally tunable saturable absorber of claim 6, wherein the top and bottom gold electrodes have a thickness of 4 μm and a side length of 1 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310712788.8A CN116454721B (en) | 2023-06-16 | 2023-06-16 | Super-surface-based 3-mu m-band function-adjustable saturable absorber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310712788.8A CN116454721B (en) | 2023-06-16 | 2023-06-16 | Super-surface-based 3-mu m-band function-adjustable saturable absorber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116454721A CN116454721A (en) | 2023-07-18 |
| CN116454721B true CN116454721B (en) | 2023-11-03 |
Family
ID=87124099
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310712788.8A Active CN116454721B (en) | 2023-06-16 | 2023-06-16 | Super-surface-based 3-mu m-band function-adjustable saturable absorber |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116454721B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116826504B (en) * | 2023-08-31 | 2023-11-21 | 山东科技大学 | 3 mu m wave band laser based on super surface |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205086A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Two-dimensional material heterojunction saturable absorption mirror and preparation method therefor |
| CN109149333A (en) * | 2018-09-30 | 2019-01-04 | 深圳大学 | A kind of waveguide integrating optical modulator and preparation method thereof |
| CN111969398A (en) * | 2020-08-06 | 2020-11-20 | 南京信息工程大学 | Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber |
| CN113094959A (en) * | 2021-04-20 | 2021-07-09 | 天津大学 | Nonlinear response regulation and control method based on constraint state of continuous domain of ultrastructural surface |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11733552B2 (en) * | 2020-03-31 | 2023-08-22 | Arizona Board Of Regents On Behalf Of Arizona State University | Ultra-fast optical modulation and ultra-short pulse generation based on tunable graphene-plasmonic hybrid metasurfaces |
-
2023
- 2023-06-16 CN CN202310712788.8A patent/CN116454721B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018205086A1 (en) * | 2017-05-08 | 2018-11-15 | 深圳大学 | Two-dimensional material heterojunction saturable absorption mirror and preparation method therefor |
| CN109149333A (en) * | 2018-09-30 | 2019-01-04 | 深圳大学 | A kind of waveguide integrating optical modulator and preparation method thereof |
| CN111969398A (en) * | 2020-08-06 | 2020-11-20 | 南京信息工程大学 | Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber |
| CN113094959A (en) * | 2021-04-20 | 2021-07-09 | 天津大学 | Nonlinear response regulation and control method based on constraint state of continuous domain of ultrastructural surface |
Non-Patent Citations (2)
| Title |
|---|
| An Ultra-Broadband Terahertz Absorber Based on Coplanar Graphene and Gold Hybridized Metasurface;Yun-wu Deng et al.;Plasmonics;第14卷(第5期);摘要，第1058-1060页，图1 * |
| Ultra-fast Graphene-Plasmonic Hybrid Metasurface Saturable Absorber with Low Saturation Fluence;Md Zubair Ebne Rafique et al.;ACS Nano;第17卷(第11期);摘要，第4-7页，图1 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN116454721A (en) | 2023-07-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Liu et al. | MoTe 2 saturable absorber with high modulation depth for erbium-doped fiber laser | |
| Han et al. | Generation, optimization, and application of ultrashort femtosecond pulse in mode-locked fiber lasers | |
| CN116454721B (en) | Super-surface-based 3-mu m-band function-adjustable saturable absorber | |
| Gellermann | Color center lasers | |
| Liu et al. | Titanium selenide saturable absorber mirror for passive Q-switched Er-doped fiber laser | |
| Wan et al. | High-quality monolayer graphene for bulk laser mode-locking near 2 μm | |
| Shi et al. | Ti 2 CT x (T= O, OH or F) nanosheets as new broadband saturable absorber for ultrafast photonics | |
| Tang et al. | Passively Q-switched Nd: YVO 4 laser using WS 2 saturable absorber fabricated by radio frequency magnetron sputtering deposition | |
| Zhu et al. | Diode-pumped Yb, Y: CaF2 laser mode-locked by monolayer graphene | |
| Liu et al. | High repetition rate all-solid-state pulsed 2 μm laser based on selenide molybdenum saturable absorber | |
| CN217281621U (en) | Mode locker and mode-locked laser comprising same | |
| Ma et al. | High-power large-energy rectangular mode-locked Er-doped fiber laser based on high-damage-threshold MoS 2 saturable absorber | |
| Zhang et al. | Controllable epitaxy of quasi-one-dimensional topological insulator α-Bi4Br4 for the application of saturable absorber | |
| CN111969398A (en) | Voltage-controllable all-solid-state passively Q-switched laser based on graphene saturable absorber | |
| CN103151695B (en) | Topological insulator pulse modulation device and all-solid state laser pulse modulated lasers | |
| Sui et al. | Large energy mode-locked phenomenon based on ZrS2 in Er-doped fiber laser | |
| Bai et al. | CW mode-locked 1.908 µm Tm: LiYF4 slab laser based on an output-coupling graphene saturable absorber mirror | |
| Wang et al. | High-damage vanadium pentoxide film saturable absorber for sub-nanosecond Nd: YAG lasers | |
| Bai et al. | Double Q-switched 946 nm laser with MgO: LN electro-optic crystal and MoSe 2 saturable absorber | |
| Liu et al. | Mode-locked all-fiber laser with high stability based on cobalt oxyfluoride | |
| CN109256671B (en) | Method for realizing soliton mode-locked fiber laser based on graphene and tin disulfide composite film | |
| CN111555107B (en) | Ytterbium ion doped ABGS crystal and self-frequency-doubling ultrashort pulse laser | |
| CN110391583B (en) | Saturable absorber based on non-stoichiometric transition metal oxide film and preparation method thereof | |
| CN116937312A (en) | Saturable absorber device based on structure dielectric constant near-zero film, preparation method and application | |
| Pang et al. | Nanosecond hybrid Q-switched Er-doped fiber laser with WS 2 saturable absorber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |