CN110515224B - Graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated - Google Patents
Graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated Download PDFInfo
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Abstract
A graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated relates to the technical field of electromagnetism and electromagnetic waves. The invention aims to solve the problems that the existing tunable terahertz EIT metamaterial slow-light device has a single working frequency band, is narrow in tunable range, complex in structure and preparation process, complex in external equipment required by an excitation mode, single in function, low in reliability, narrow in active material selectable range and small in linear property. A silicon dioxide insulating layer is arranged on the silicon substrate layer, two patterned graphene band structures which are periodically arranged are arranged on the silicon dioxide insulating layer, patterned metal groove structures which are periodically arranged are arranged on the graphene band structures, and the two graphene structures are respectively connected with a first metal electrode Pad1 and a second metal electrode Pad2. The graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated and controlled can be obtained.
Description
Technical Field
The invention relates to the technical field of electromagnetic fields and electromagnetic waves, in particular to a graphene-metal groove metamaterial terahertz slow-light device.
Background
Electromagnetic Induced Transparency (EIT) is a technique for eliminating the influence of a medium in the process of electromagnetic wave propagation by using a quantum coherence effect. It is a technique of eliminating an absorption phenomenon that would otherwise occur when a beam of weak light having a frequency close to the coupling frequency between two energy levels of atoms passes through a medium by adding a strong beam of electromagnetic radiation (referred to as coupled light). The initial EIT phenomenon is found in a three-level system where |1> is the ground state and |2> and |3> are the excited states, and when a probe beam of light is emitted into the medium, atoms will be excited from the ground state |1> to the excited state |3> and a transition occurs. As the light is absorbed, the intensity of the received probe light will be greatly reduced or even disappear. When a coupling light beam with a frequency close to the frequency of the excited state |2> and |3> is added, the two energy levels are strongly coupled, so that the energy level of the excited state |3> is split to form two energy states with close energy, which are called decorated states. At this time, the detection light has the same probability of transitioning to the two decorated states when incident, and quantum destructive interference occurs at the probability of both transitions at the time of the transition, resulting in a decrease in absorption of the detection light detected at the resonance frequency, or even a disappearance thereof. At this time, the detection light can propagate through the medium, i.e. the electromagnetic induction transparency phenomenon.
However, the EIT phenomenon of the atomic system is limited by stable lasers and low temperature operating conditions, resulting in that the EIT phenomenon is difficult to implement at a chip level. Currently, EIT-like phenomena found in classical systems are of great interest, such as coupling resonators and plasma structures. Due to EIT-like resonance interference caused by Fano type linear destructiveness, experimental conditions applied by quantum destructive interference do not need to be realized, a realization mode is provided for practical application of EIT phenomena, attention is paid to the EIT phenomena of plasma type based on metamaterials particularly, and novel devices such as slow light devices and high-sensitivity sensors can be developed by utilizing the EIT phenomena. Compared with the traditional EIT phenomenon among atoms, the EIT-like phenomenon in the metamaterial can be realized through different mechanisms, so that the EIT-like phenomenon is easier to regulate and control, such as: optical dipole antennas, closed-loop resonators, open-loop resonators, and the like. Because the EIT phenomenon has a slow light effect, a slow light device can be realized by means of the slow light effect of the similar EIT phenomenon in the metamaterial, so that the practical applicability of the EIT phenomenon is enhanced. However, once the geometric parameters of the metamaterial unit are determined, the properties of the metamaterial unit cannot be tuned or changed, and the application range of the metamaterial unit is greatly limited. Therefore, the research of tunable EIT metamaterials attracts more and more attention, and the research of efficient and convenient tuning modes becomes the focus of attention, so that the tunable EIT metamaterials have wider application prospects in the fields of sensing, absorption, nonlinear optics and the like.
Currently, a variety of tunable EIT metamaterials have been discovered and reported, which have attracted a great deal of attention and interest. For example, in 2011, jingbo Wu and Biaobing Jin et al of the university of Nanjing propose two superconductor-based planar tunable terahertz EIT metamaterials; in 2016, quan Xu et al of Tianjin university design a terahertz EIT metamaterial based on semiconductor tuning; in 2016, prakash Pittchappa of national university in Singapore proposed an electromagnetically induced transparent metamaterial based on MEMS tuning; in 2017, hang Su et al, university of Harbin industry, proposed an EIT super surface switch based on liquid crystal adjustability. However, because the temperature range required by superconductor tuning is low, stable pump light needs to be added for semiconductor tuning, the process of the MEMS technology is complex, the reliability is low, the liquid crystal material tuning is not flexible enough, and complete polarized light is difficult to obtain; in addition, currently tunable EIT metamaterials are mostly single operating bands. These defects bring great difficulty to the practical application of EIT metamaterials, and limit the application range of the EIT metamaterials.
Disclosure of Invention
The invention aims to solve the problems that an existing tunable terahertz EIT metamaterial slow light device is narrow in tunable range, complex in structure and preparation process, complex in external equipment required by an excitation mode, single in function, low in reliability, narrow in active material selectable range and small in linear property, and provides a graphene-metal groove metamaterial terahertz slow light device capable of being flexibly and selectively regulated and controlled in double bands.
A dual-band graphene-metal groove metamaterial terahertz slow light device capable of being flexibly and selectively regulated comprises a terahertz slow light device functional structure, a silicon dioxide insulating layer, a silicon substrate and a gate electrode structure; the terahertz slow light device functional structure is composed of metamaterial structural units which are periodically arranged, each metamaterial structural unit is composed of a graphical metal groove structure and two graphical graphene band structures, and the graphical metal groove structures are arranged on the two graphical graphene band structures; the gate electrode structure consists of a first metal electrode Pad1 and a second metal electrode Pad2, a silicon dioxide insulating layer is arranged on the silicon substrate, and two patterned graphene band structures are arranged on the silicon dioxide insulating layer and are arranged periodically; the first metal electrode Pad1 and the second metal electrode Pad2 are respectively arranged on two sides of the upper end face of the terahertz slow light device, and the two periodically arranged patterned graphene band structures are respectively connected with the first metal electrode Pad1 and the second metal electrode Pad 2;
along the direction from the first metal electrode Pad1 to the second metal electrode Pad2, a left graphene strip in the terahertz slow light device is formed by interconnecting first graphene strip structures and is connected with the first metal electrode Pad1 to form a first electrode; along the direction from the second metal electrode Pad2 to the first metal electrode Pad1, the corresponding right graphene strip in the terahertz slow light device is formed by the interconnection of second graphene strip structures and is connected with the second metal electrode Pad2 to form a second electrode; the metal wire connected with the left graphene strip is not connected with the metal wire connected with the right graphene strip, and the first electrode is different from the second electrode;
the graphical metal groove structure consists of two pairs of horizontally arranged metal grooves and a vertically arranged metal groove, the two pairs of horizontally arranged metal grooves are arranged on two sides of the vertically arranged metal groove, and along the central line of the metamaterial structure unit, the two pairs of horizontally arranged metal grooves are symmetrical in the horizontal direction and asymmetrical in the vertical direction; the vertically arranged metal groove is provided with a vertical gap which penetrates through the metamaterial structure unit along the center line of the groove; the first graphene band structure and the second graphene band structure are the same in length and different in width, are respectively vertically arranged below two pairs of horizontally arranged metal grooves, and are vertically arranged and patterned along the central line of the metamaterial structure unit, wherein the two graphene band structures are symmetrical in the horizontal direction and asymmetrical in the vertical direction; and a vertical gap is formed between every two adjacent units of the metal metamaterial structure.
A preparation method of a graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated and controlled comprises the following steps:
1. substrate oxidation: growing a silicon dioxide insulating layer on the low-doped high-resistance silicon substrate by adopting an oxidation process to obtain the silicon substrate with the silicon dioxide insulating layer;
2. preparing graphene by a CVD method: firstly, pretreating a copper foil substrate by using ferric nitrate, then, taking methane as a carbon source, and taking argon and hydrogen as protective and reducing gases respectively, and carrying out heat treatment on the pretreated copper foil substrate to grow graphene so as to obtain the graphene to be used;
3. transferring the graphene substrate: spin-coating polymethyl methacrylate (PMMA) on the surface of graphene, then placing the graphene spin-coated with PMMA in a ferric chloride solution to corrode a copper foil substrate to obtain graphene corroded by copper foil, then cleaning the graphene corroded by copper foil in deionized water for multiple times to obtain cleaned graphene, finally fishing the graphene from the deionized water by using a silicon substrate grown with a silicon dioxide insulating layer, removing the PMMA on the graphene and carrying out secondary cleaning treatment, and completing the transfer of the graphene on the copper substrate to the silicon substrate grown with the silicon dioxide insulating layer;
4. and (3) graphene patterning: spin-coating photoresist on the surface of graphene transferred to a silicon substrate with a silicon dioxide insulating layer by adopting a mechanical spin-coating method, then drying the graphene coated with the photoresist, sequentially carrying out exposure, development and fixation to obtain a patterned photoresist mask for preparing a graphene band structure, then etching the graphene of the photoresist mask by adopting oxygen plasma, finally soaking in acetone to remove the photoresist and cleaning to obtain the patterned graphene band structure;
5. patterning the metal: and D, firstly, spin-coating photoresist on the surface of the patterned graphene structure obtained in the step four by adopting a mechanical spin-coating method, sequentially carrying out exposure, development and fixation to obtain a patterned photoresist mask for preparing the patterned metal groove structure, then depositing metal on the patterned photoresist mask for preparing the patterned metal groove structure by adopting a magnetron sputtering method, finally soaking in an acetone solution for 24 hours to strip the metal and remove the photoresist to obtain the patterned metal groove structure and a gate electrode structure, and completing the preparation of the graphene-metal groove metamaterial terahertz slow light device with double bands capable of being flexibly and selectively regulated.
The invention has the beneficial effects that:
1. the traditional terahertz metamaterial is based on patterned metal periodic arrangement, and as the metal conductivity is fixed and unchanged, once the structural parameters of a metal structural unit are fixed, the corresponding resonance point and the corresponding resonance mode are also fixed, so that the working frequency and the electromagnetic property of the terahertz metamaterial are fixed, and the electromagnetic property cannot be flexibly regulated and controlled; according to the graphene-metal groove metamaterial terahertz slow-light device with the double bands capable of being flexibly and selectively regulated, the graphene structure is integrated in the structural unit of the EIT metamaterial, the Fermi energy of the graphene is regulated by utilizing electrostatic doping, so that the conductivity of the graphene is tuned, and the flexible control of a metamaterial electromagnetic induction transparent window is realized;
2. most of the EIT metamaterials work in a single frequency band at present and cannot be tuned, so that the application range of the EIT metamaterials is greatly limited; the invention relates to a graphene-metal groove metamaterial terahertz slow light device with double bands capable of being flexibly and selectively regulated, wherein a metal metamaterial structural unit of the device consists of two pairs of horizontally arranged metal grooves and one vertically arranged metal groove, and two transparent windows are realized by adopting a dark-bright-dark electromagnetic field coupling mode; on the basis, the graphene band structure is integrated below the two pairs of horizontally arranged dark mode metal groove structures, the Fermi energy of graphene is adjusted through electrostatic doping, the amplitude and the working frequency of the two transparent windows can be flexibly adjusted and controlled, and the function and the application range of the EIT metamaterial are enlarged.
3. Because the traditional optical pumping excitation and thermal excitation modes can only carry out global regulation and control on the whole structure, but can not realize local selective regulation and control; the graphene-metal groove metamaterial terahertz slow-light device with two strips capable of being flexibly and selectively regulated adopts two gate electrode structures, and gaps are arranged at the edges of metamaterial structure units and at the centers of central vertical hollow strips, so that the two pairs of horizontally arranged metal groove structures in the structure units are electrically isolated; voltage is loaded between the gate electrode and the substrate selectively, so that selective electric doping can be carried out on two graphene strips, and the Fermi energy of graphene is adjusted, so that the amplitude of two electromagnetic induction transparent windows of the metamaterial can be selectively and flexibly regulated, different reconstruction states are formed, the amplitude and group delay of the electromagnetic induction reflecting windows can be flexibly regulated, various working states are formed, single-band regulation and control can be carried out, simultaneous regulation and control of double bands can be realized, asynchronous regulation and control of the double bands can also be realized, the working range is expanded, and the practicability is improved;
4. the graphene-metal groove metamaterial terahertz slow-light device with the double bands capable of being flexibly and selectively regulated and controlled is composed of complementary metamaterials, the graphene structure is integrated in the structural unit of the metamaterials, the Fermi energy of graphene is changed through electric doping, and the device has the advantages of being low in cost, simple in process, easy to tune and the like. According to the terahertz metamaterial slow-light device, the graphene is integrated on the metal structure to construct the terahertz metamaterial slow-light device, and the Fermi energy of the graphene strip is tuned through electrostatic doping, so that the conductivity of the graphene strip and the near-field coupling characteristic among elements in a metamaterial structure unit are selectively controlled, and the flexible control of the amplitude and the group delay of the electromagnetic induction transparent peak of the slow-light device is selectively realized.
The graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated and controlled can be obtained.
Drawings
Fig. 1 is a schematic structural diagram of a graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated in an embodiment;
FIG. 2 is a top view of a metamaterial building block;
FIG. 3 shows the left graphene strip fermi energy E f1 From 0.1eV to 0.7eV, right side graphene strip Fermi energy E f2 At 0.1eV, at 0.7TVariation of the reflection curve for the Hz to 1.1THz frequency band.
FIG. 4 shows the Fermi energy E of the graphene strip on the left f1 Fermi energy E of right graphene strip at 0.1eV f2 The reflection curve varies in the 0.7THz to 1.1THz band from 0.1eV to 0.6 eV.
FIG. 5 is a graph of the change in reflectance curve for a two-sided graphene strip changing from a Fermi energy of (0.1 eV and 0.08 eV) to a Fermi energy of (0.6 eV and 1eV);
FIG. 6 is the phase change as the Fermi energy of the two-sided graphene strips changes from (0.1 eV and 0.08 eV) to (0.6 eV and 1eV);
FIG. 7 shows the change in group retardation as the Fermi energy of the graphene strips on both sides changes from (0.1 eV and 0.08 eV) to (0.6 eV and 1eV).
The structure comprises a silicon substrate 1, a silicon dioxide insulating layer 2, two patterned graphene band structures 3, a first graphene band structure 3-1, a second graphene band structure 3-2, a patterned metal groove structure 4, a first metal electrode Pad1 5 and a second metal electrode Pad2 6.
Detailed Description
The first specific implementation way is as follows: the embodiment of the invention provides a dual-band graphene-metal groove metamaterial terahertz slow light device capable of being flexibly and selectively regulated, which is characterized by comprising a terahertz slow light device functional structure, a silicon dioxide insulating layer 2, a silicon substrate 1 and a gate electrode structure; the terahertz slow light device functional structure is composed of metamaterial structural units which are periodically arranged, each metamaterial structural unit is composed of a graphical metal groove structure 4 and two graphical graphene band structures 3, and the graphical metal groove structures 4 are arranged on the two graphical graphene band structures 3; the gate electrode structure consists of a first metal electrode Pad1 and a second metal electrode Pad2, a silicon dioxide insulating layer 2 is arranged on a silicon substrate 1, two patterned graphene band structures 3 are arranged on the silicon dioxide insulating layer 2, and the two patterned graphene band structures 3 are arranged periodically; a first metal electrode Pad1 and a second metal electrode Pad2 are respectively arranged on two sides of the upper end face of the terahertz slow light device, and the two periodically arranged patterned graphene band structures 3 are respectively connected with the first metal electrode Pad1 and the second metal electrode Pad2 6;
along the direction from the first metal electrode Pad1 to the second metal electrode Pad2, a left graphene strip in the terahertz slow light device is formed by interconnecting first graphene strip structures 3-1 and is connected with the first metal electrode Pad1 5 to form a first electrode; along the direction from the second metal electrode Pad2 to the first metal electrode Pad1 5, the corresponding right graphene strip in the terahertz slow light device is formed by interconnecting second graphene strip structures 3-2 and is connected with the second metal electrode Pad2 to form a second electrode; the metal wire connected with the left graphene strip is not connected with the metal wire connected with the right graphene strip, and the first electrode is different from the second electrode;
the graphical metal groove structure 4 consists of two pairs of horizontally arranged metal grooves and a vertically arranged metal groove, the two pairs of horizontally arranged metal grooves are arranged on two sides of the vertically arranged metal groove, and along the central line of the metamaterial structure unit, the two pairs of horizontally arranged metal grooves are symmetrical in the horizontal direction and asymmetrical in the vertical direction; the vertically arranged metal groove is provided with a vertical gap which penetrates through the metamaterial structure unit along the center line of the groove; the first graphene band structure 3-1 and the second graphene band structure 3-2 are identical in length and different in width, are respectively vertically arranged below two pairs of horizontally arranged metal grooves, and are symmetrical in the horizontal direction and asymmetrical in the vertical direction along the central line of the metamaterial structural unit, wherein the two vertically arranged patterned graphene band structures 3 are symmetrical in the horizontal direction; and a vertical gap is formed between every two adjacent units of the metal metamaterial structure.
The beneficial effects of the embodiment are as follows:
1. the traditional terahertz metamaterial is based on patterned metal periodic arrangement, and as the metal conductivity is fixed and unchanged, once the structural parameters of a metal structural unit are fixed, the corresponding resonance point and the corresponding resonance mode are also fixed, so that the working frequency and the electromagnetic property of the terahertz metamaterial are fixed, and the electromagnetic property cannot be flexibly regulated and controlled; according to the graphene-metal groove metamaterial terahertz slow-light device with double strips capable of being flexibly and selectively regulated, the graphene structure is integrated in the structural unit of the EIT metamaterial, the Fermi energy of graphene is regulated by utilizing electrostatic doping, so that the conductivity of the graphene is tuned, and the flexible control of a metamaterial electromagnetic induction transparent window is realized;
2. most of the EIT metamaterials work at a single frequency band at present and cannot be tuned, so that the application range of the EIT metamaterials is greatly limited; according to the graphene-metal groove metamaterial terahertz slow light device with the double bands capable of being flexibly and selectively regulated, the metal metamaterial structural unit is composed of two pairs of horizontally arranged metal grooves and one vertically arranged metal groove, and two transparent windows are realized by adopting a dark-bright-dark electromagnetic field coupling mode; on the basis, the graphene band structure is integrated below the two pairs of horizontally arranged dark mode metal groove structures, the Fermi energy of graphene is adjusted through electrostatic doping, the amplitude and the working frequency of the two transparent windows can be flexibly adjusted and controlled, and the function and the application range of the EIT metamaterial are enlarged.
3. The traditional optical pumping excitation and thermal excitation modes can only carry out global regulation and control on the whole structure, but cannot realize local selective regulation and control; the graphene-metal groove metamaterial terahertz slow-light device with two strips capable of being flexibly and selectively regulated and controlled in the embodiment adopts a two-gate electrode structure, and a gap is arranged at the edge of a metamaterial structure unit and a gap is arranged at the center of a central vertical hollow strip, so that the purpose of realizing electrical isolation between two pairs of horizontally arranged metal groove structures in the structure unit is realized; voltage is loaded between the gate electrode and the substrate selectively, so that selective electric doping can be carried out on two graphene strips, and the Fermi energy of graphene is adjusted, so that the amplitude of two electromagnetic induction transparent windows of the metamaterial can be selectively and flexibly adjusted and controlled, different reconstruction states are formed, the amplitude and group delay of electromagnetic induction reflecting windows can be flexibly adjusted and controlled, various working states are formed, single-band adjustment and control can be carried out, double-band simultaneous adjustment and control can be realized, double-band asynchronous adjustment and control can also be realized, the working range is expanded, and the practicability is improved;
4. the graphene-metal groove metamaterial terahertz slow-light device with the double bands capable of being flexibly and selectively regulated and controlled is composed of complementary metamaterials, the graphene structure is integrated in the structural unit of the metamaterials, the Fermi energy of graphene is changed through electric doping, and the graphene-metal groove metamaterial terahertz slow-light device has the advantages of being low in cost, simple in process, easy to tune and the like. According to the embodiment, the terahertz metamaterial slow-light device is constructed by integrating graphene on a metal structure, and the Fermi energy of the graphene strip is tuned through electrostatic doping, so that the conductivity of the graphene strip and the near-field coupling characteristics among elements in a metamaterial structure unit are selectively controlled, and the flexible control of the amplitude and the group delay of the electromagnetic induction transparent peak of the slow-light device is selectively realized.
The second embodiment is as follows: the first difference between the present embodiment and the present embodiment is: the material of the silicon substrate 1 is low-doped high-resistance silicon, the material of the graphical metal groove structure 4 is Al, cu or Au, and the thickness of the graphical metal groove structure is 0.2 mu m.
Other steps are the same as those in the first embodiment.
The third concrete implementation mode: the first or second difference between the present embodiment and the second embodiment is: applying a voltage V between the first electrode Pad1 and the second electrode Pad2 and the silicon substrate 1 1 And V 2 The Fermi energy of graphene can be adjusted and controlled by electrostatic doping, the Fermi energy of graphene strips on two sides can be flexibly tuned by controlling the voltage of the two electrodes, and the coupling strength of each element can be adjusted; by changing the coupling strength among the three elements, the amplitude of the electromagnetic induction transparent window of the terahertz slow light device can be flexibly regulated and controlled.
The other steps are the same as those in the first or second embodiment.
The fourth concrete implementation mode is as follows: the difference between this embodiment and one of the first to third embodiments is: the metamaterial structure unit has the unit length in the x directionP x 300 μm, y-direction cell lengthP y The thickness of the metamaterial structure unit is 160 mu m, gaps of 2 mu m are arranged on two sides of the metamaterial structure unit, and a gap of 2 mu m is arranged in the center of the metamaterial structure unit.
The other steps are the same as those in the first to third embodiments.
The fifth concrete implementation mode is as follows: the difference between this embodiment and one of the first to fourth embodiments is: a preparation method of a graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated and controlled comprises the following steps:
1. substrate oxidation: growing a silicon dioxide insulating layer 2 on the low-doped high-resistance silicon substrate 1 by adopting an oxidation process to obtain the silicon substrate 1 on which the silicon dioxide insulating layer 2 grows;
2. preparing graphene by a CVD method: firstly, pretreating a copper foil substrate by using ferric nitrate, then respectively using methane as a carbon source and argon and hydrogen as protective and reducing gases, and carrying out heat treatment on the pretreated copper foil substrate to grow graphene so as to obtain graphene to be used;
3. transferring the graphene substrate: spin-coating PMMA on the surface of graphene, placing the graphene spin-coated with PMMA in a ferric chloride solution to corrode a copper foil substrate to obtain graphene corroded by copper foil, cleaning the graphene corroded by copper foil in deionized water for multiple times to obtain cleaned graphene, fishing out the graphene from the deionized water by using a silicon substrate 1 grown with a silicon dioxide insulating layer 2, removing the PMMA on the graphene, and performing secondary cleaning treatment, so that the graphene on the copper substrate is transferred to the silicon substrate 1 grown with the silicon dioxide insulating layer 2;
4. patterning graphene: spin-coating a photoresist on the surface of graphene transferred to a silicon substrate 1 on which a silicon dioxide insulating layer 2 grows by adopting a mechanical spin-coating method, then drying the graphene on which the photoresist is spin-coated, and sequentially carrying out exposure, development and fixation to obtain a photoresist mask for preparing a graphene band structure, then etching the graphene on the photoresist mask by adopting oxygen plasma, and finally soaking in acetone to remove the photoresist and cleaning to obtain a patterned graphene band structure;
5. patterning the metal: and step four, firstly, carrying out spin coating on the surface of the patterned graphene structure obtained in the step four by adopting a mechanical spin coating method, carrying out exposure, development and fixation in sequence to obtain a patterned photoresist mask for preparing the patterned metal groove structure 4, then depositing metal on the patterned photoresist mask for preparing the patterned metal groove structure 4 by adopting a magnetron sputtering method, finally soaking in an acetone solution for 24 hours to strip the metal and remove the photoresist to obtain the patterned metal groove structure 4 and a gate electrode structure, and completing the preparation of the graphene-metal groove metamaterial terahertz slow light device with double bands capable of being flexibly and selectively regulated.
The sixth specific implementation mode: the difference between this embodiment and one of the first to fifth embodiments is as follows: the oxidation process in the first step is a dry oxidation process, and the dry oxidation process is to react silicon with oxygen at high temperature to generate silicon dioxide.
The other steps are the same as those in the first to fifth embodiments.
The seventh concrete implementation mode: the difference between this embodiment and the first to sixth embodiments is: and the heat treatment in the second step is to heat the pretreated copper foil substrate to 1050 ℃, then reduce the temperature to 1000 ℃, and then continue to reduce the temperature to room temperature.
The other steps are the same as those in the first to sixth embodiments.
The specific implementation mode eight: the difference between this embodiment and one of the first to seventh embodiments is: the cleaning in the third step is to place the graphene with the corroded copper foil in deionized water, and obtain the cleaned graphene after multiple times of cleaning; the substrate transfer and secondary cleaning treatment in the third step is to fish the cleaned graphene from the bottom of the deionized water by using an oxidized silicon wafer, finally, place the fished cleaned graphene in acetone to remove PMMA (polymethyl methacrylate), and clean the cleaned graphene for multiple times by using deionized water, thereby completing the transfer of the graphene on the copper substrate to the silicon dioxide insulating layer 2.
The other steps are the same as those in the first to seventh embodiments.
The specific implementation method nine: the difference between this embodiment and the first to eighth embodiments is: the step four of the mechanical spin coating method comprises the following steps; spin-coating at 500r/min for 20s, then at 4000r/min for 60s, and then at 500r/min for 20s.
The other steps are the same as those in the first to eighth embodiments.
The specific implementation mode is ten: the difference between this embodiment and one of the first to ninth embodiments is as follows: and fifthly, depositing metal by adopting a magnetron sputtering method, wherein the metal is Al, cu or Au, and the thickness of the metal is 0.2 mu m.
The following examples were used to demonstrate the beneficial effects of the present invention:
the first embodiment is as follows: a double-band graphene-metal groove metamaterial terahertz slow light device capable of being flexibly and selectively regulated and controlled comprises a terahertz slow light device functional structure, a silicon dioxide insulating layer 2, a silicon substrate 1 and a gate electrode structure; the terahertz slow light device functional structure is composed of metamaterial structural units which are periodically arranged, each metamaterial structural unit is composed of a graphical metal groove structure 4 and two graphical graphene band structures 3, and the graphical metal groove structures 4 are arranged on the two graphical graphene band structures 3; the gate electrode structure consists of a first metal electrode Pad1 and a second metal electrode Pad2, a silicon dioxide insulating layer 2 is arranged on a silicon substrate 1, two patterned graphene band structures 3 are arranged on the silicon dioxide insulating layer 2, and the two patterned graphene band structures 3 are arranged periodically; the first metal electrode Pad1 and the second metal electrode Pad2 are respectively arranged on two sides of the upper end face of the terahertz slow light device, and the two periodically arranged patterned graphene band structures 3 are respectively connected with the first metal electrode Pad1 and the second metal electrode Pad2 6; the silicon substrate 1 is made of low-doped high-resistance silicon, the graphical metal groove structure 4 is made of Al, and the thickness of the graphical metal groove structure is 0.1 mu m;
along the direction from the first metal electrode Pad1 to the second metal electrode Pad2, a left graphene strip in the terahertz slow light device is formed by interconnecting first graphene strip structures 3-1 and is connected with the first metal electrode Pad1 to form a first electrode; along the direction from the second metal electrode Pad2 to the first metal electrode Pad1 5, the corresponding right graphene strip in the terahertz slow light device is formed by interconnecting second graphene strip structures 3-2 and is connected with the second metal electrode Pad2 to form a second electrode; the metal wire connected with the left graphene strip is not connected with the metal wire connected with the right graphene strip, and the first electrode is different from the second electrode;
the graphical metal groove structure 4 consists of two pairs of horizontally arranged metal grooves and a vertically arranged metal groove, the two pairs of horizontally arranged metal grooves are arranged on two sides of the vertically arranged metal groove, and along the central line of the metamaterial structure unit, the two pairs of horizontally arranged metal grooves are symmetrical in the horizontal direction and asymmetrical in the vertical direction; the vertically arranged metal groove is provided with a vertical gap which penetrates through the metamaterial structure unit along the center line of the groove; the first graphene band structure 3-1 and the second graphene band structure 3-2 are identical in length and different in width, are respectively vertically arranged below two pairs of horizontally arranged metal grooves, and are symmetrical in the horizontal direction and asymmetrical in the vertical direction along the central line of the metamaterial structural unit, wherein the two vertically arranged patterned graphene band structures 3 are symmetrical in the horizontal direction; and a vertical gap is formed between every two adjacent units of the metal metamaterial structure.
Applying a voltage V between the first electrode Pad1 and the second electrode Pad2 and the silicon substrate 1 1 And V 2 The Fermi energy of graphene can be adjusted and controlled by electrostatic doping, the Fermi energy of graphene strips on two sides can be flexibly tuned by controlling the voltage of the two electrodes, and the coupling strength of each element can be adjusted; by changing the coupling strength among the three elements, the amplitude of the electromagnetically induced transparent window of the terahertz slow light device can be flexibly regulated and controlled.
The metamaterial structure unit has the unit length in the x directionP x 300 μm, y-direction unit lengthP y And the thickness of the metamaterial is 160 mu m, gaps of 2 mu m are arranged on two sides of the metamaterial structure unit, and a gap of 2 mu m is arranged in the center of the metamaterial structure unit.
As shown in fig. 3, the left graphene fermi level E f1 Through V 1 Connecting Pad1 for electric doping, wherein the Fermi level of the graphene on the right side is E f2 Through V 2 Connecting Pad2 for electric doping; when the left graphene Fermi level E is changed alone f1 Right graphene Fermi E f2 The range of the EIT window of the low frequency band can be flexibly controlled by fixing the range to 0.1 eV. The resonance point is at 0.870THz, and the amplitude of the transparent peak drops from 0.755 to 0.461 when the graphene fermi energy on the left changes from 0.1eV to 0.7 eV.
As shown in fig. 4, the left side graphene fermi energy E f1 Through V 1 Connecting Pad1 for electric doping, wherein the Fermi energy of the graphene on the right side is E f2 Through V 2 Connecting Pad2 for electric doping; when left side graphene fermi energy E is fixed f1 The Fermi energy E of the right side graphene is changed independently at 0.1eV f2 The amplitude of the EIT window of the high frequency band can be flexibly controlled. The resonance point is at 0.947THz at the right where the Fermi energy changes from 0.1eV to 0.6eV, and the amplitude of the clear peak changes from 0.733 to 0.509.
As shown in FIGS. 5 to 7, when the Fermi energy of the graphene on both sides is changed from 0.1eV and 0.08eV to 0.6eV and 1eV, and the frequency is 0.866THz and 0.945THz, the electromagnetically induced transparent peaks of the two slow light devices are respectively changed from 0.764 and 0.771 to 0.527 and 0.548, and when the strip of the graphene on both sides is changed from 0.1eV and 0.08eV to 0.6eV and 1eV, the group retardation peak of the slow light device is changed from 1.94139ps to 0.53097ps.
Example two: a preparation method of a graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated and controlled comprises the following steps:
1. substrate oxidation: growing a silicon dioxide insulating layer 2 on the low-doped high-resistance silicon substrate 1 by adopting an oxidation process to obtain the silicon substrate 1 on which the silicon dioxide insulating layer 2 grows;
2. preparing graphene by a CVD method: firstly, pretreating a copper foil substrate by using ferric nitrate, then respectively using methane as a carbon source and argon and hydrogen as protective and reducing gases, and carrying out heat treatment on the pretreated copper foil substrate to grow graphene so as to obtain graphene to be used;
3. transferring the graphene substrate: placing the graphene coated with PMMA in a ferric chloride solution to corrode a copper foil substrate to obtain graphene corroded by the copper foil, cleaning the graphene corroded by the copper foil in deionized water for multiple times to obtain cleaned graphene, fishing the graphene from the deionized water by using a silicon substrate 1 grown with a silicon dioxide insulating layer 2, removing the PMMA on the graphene, performing secondary cleaning treatment, and transferring the graphene on the copper substrate to the silicon substrate 1 grown with the silicon dioxide insulating layer 2;
4. and (3) graphene patterning: spin-coating photoresist on the surface of graphene transferred to a silicon substrate 1 on which a silicon dioxide insulating layer 2 grows by adopting a mechanical spin-coating method, then drying the graphene on which the photoresist is spin-coated, sequentially carrying out exposure, development and fixation to obtain a patterned photoresist mask for preparing a graphene band structure, etching the graphene on the photoresist mask by adopting oxygen plasma, and finally soaking in acetone to remove the photoresist and cleaning to obtain the patterned graphene band structure;
5. patterning the metal: firstly, carrying out spin coating on a photoresist on the surface of the patterned graphene structure obtained in the fourth step by adopting a mechanical spin coating method, sequentially carrying out exposure, development and fixation to obtain a patterned photoresist mask for preparing the patterned metal tank structure 4, then depositing metal on the patterned photoresist mask for preparing the patterned metal tank structure 4 by adopting a magnetron sputtering method, finally soaking in an acetone solution for 24 hours to strip the metal and remove the photoresist to obtain the patterned metal tank structure 4 and a gate electrode structure, and completing the preparation of the graphene-metal tank metamaterial terahertz slow light device with double belts capable of being flexibly and selectively regulated;
the oxidation process in the step one is a dry oxidation process, wherein in the dry oxidation process, silicon and oxygen react at high temperature to generate silicon dioxide; the heat treatment in the second step is that the copper foil substrate after the pretreatment is heated to 1050 ℃, then the temperature is reduced to 1000 ℃, and then the temperature is continuously reduced to the room temperature; the cleaning in the third step is to place the graphene etched with the copper foil into deionized water, and obtain the cleaned graphene after multiple times of cleaning; the substrate transfer and secondary cleaning treatment in the third step is that the cleaned graphene is fished from the bottom of deionized water by using a silicon substrate 1 on which a silicon dioxide insulating layer 2 grows, finally the fished cleaned graphene is placed in acetone to be soaked to remove PMMA, and the deionized water is used for cleaning for multiple times, so that the graphene on the copper substrate is transferred to the silicon dioxide insulating layer 2; and fifthly, depositing metal by adopting a magnetron sputtering method, wherein the metal is Al and the thickness is 0.2 mu m.
Claims (10)
1. A double-band graphene-metal groove metamaterial terahertz slow light device capable of being flexibly and selectively regulated and controlled is characterized by comprising a terahertz slow light device functional structure, a silicon dioxide insulating layer (2), a silicon substrate (1) and a gate electrode structure;
the terahertz slow-light device functional structure is composed of metamaterial structural units which are periodically arranged, each metamaterial structural unit is composed of a graphical metal groove structure (4) and two graphical graphene band structures (3), and the graphical metal groove structures (4) are arranged on the two graphical graphene band structures (3); the gate electrode structure is composed of a first metal electrode Pad1 (5) and a second metal electrode Pad2 (6), a silicon dioxide insulating layer (2) is arranged on a silicon substrate (1), two patterned graphene band structures (3) are arranged on the silicon dioxide insulating layer (2), and the two patterned graphene band structures (3) are arranged periodically; a first metal electrode Pad1 (5) and a second metal electrode Pad2 (6) are respectively arranged on two sides of the upper end face of the terahertz slow light device, and the two periodically arranged patterned graphene band structures (3) are respectively connected with the first metal electrode Pad1 (5) and the second metal electrode Pad2 (6);
along the direction from the first metal electrode Pad1 (5) to the second metal electrode Pad2 (6), a left graphene strip in the terahertz slow light device is formed by interconnecting first graphene strip structures (3-1) and is connected with the first metal electrode Pad1 (5) to form a first electrode; along the direction from the second metal electrode Pad2 (6) to the first metal electrode Pad1 (5), the corresponding right-side graphene strip in the terahertz slow light device is formed by interconnecting second graphene strip structures (3-2) and is connected with the second metal electrode Pad2 (6) to form a second electrode; the metal wire connected with the left graphene strip is not connected with the metal wire connected with the right graphene strip, and the first electrode is different from the second electrode;
the graphical metal groove structure (4) consists of two pairs of horizontally arranged metal grooves and a vertically arranged metal groove, the two pairs of horizontally arranged metal grooves are arranged on two sides of the vertically arranged metal groove, the two pairs of horizontally arranged metal grooves are symmetrical along the central line of the metamaterial structure unit in the horizontal direction and are asymmetrical along the central line of the metamaterial structure unit in the vertical direction; the vertically arranged metal groove is provided with a vertical gap which penetrates through the metamaterial structure unit along the center line of the groove; the two patterned graphene band structures (3) are the same in length and different in width and are respectively vertically arranged below the two pairs of horizontally arranged metal grooves, and the two vertically arranged patterned graphene band structures (3) are symmetrical along the central line of the metamaterial structure unit in the horizontal direction and asymmetrical along the central line of the metamaterial structure unit in the vertical direction; a vertical gap is formed between every two adjacent units of the metal metamaterial structure.
2. The dual-band graphene-metal groove metamaterial terahertz slow-light device capable of being flexibly and selectively regulated and controlled according to claim 1, characterized in that the silicon substrate (1) is made of low-doped high-resistance silicon, the patterned metal groove structure (4) is made of Al, cu or Au, and the thickness of the patterned metal groove structure is 0.2 μm.
3. The dual-band graphene-metal groove metamaterial terahertz slow light device as claimed in claim 1, wherein a voltage V is applied between the first electrode Pad1 and the second electrode Pad2 and the silicon substrate (1) 1 And V 2 Loaded with a voltage V 1 And V 2 The Fermi energy of graphene can be adjusted and controlled by electrostatic doping, the Fermi energy of graphene strips on two sides can be flexibly tuned by controlling the voltage of the two electrodes, and the coupling strength of each element can be adjusted; by changing the coupling strength among the three elements, the amplitude of the electromagnetically induced transparent window of the terahertz slow light device can be flexibly regulated and controlled.
4. The dual-band graphene-metal groove metamaterial terahertz slow-light device as claimed in claim 1, wherein the metamaterial structure unit is an x-direction unit lengthP x 300 μm, y-direction unit lengthP y The thickness of the metamaterial structure unit is 160 mu m, gaps of 2 mu m are arranged on two sides of the metamaterial structure unit, and a gap of 2 mu m is arranged in the center of the metamaterial structure unit.
5. The preparation method of the dual-band graphene-metal groove metamaterial terahertz slow light device as claimed in claim 1, which is characterized in that the preparation method comprises the following steps:
1. substrate oxidation: growing a silicon dioxide insulating layer (2) on the low-doped high-resistance silicon substrate (1) by adopting an oxidation process to obtain the silicon substrate (1) on which the silicon dioxide insulating layer (2) grows;
2. preparing graphene by a CVD method: firstly, pretreating a copper foil substrate by using ferric nitrate, then respectively using methane as a carbon source and argon and hydrogen as protective and reducing gases, and carrying out heat treatment on the pretreated copper foil substrate to grow graphene so as to obtain graphene to be used;
3. transferring the graphene substrate: spin-coating PMMA on the surface of graphene, placing the graphene spin-coated with PMMA in a ferric chloride solution to corrode a copper foil substrate to obtain graphene corroded by copper foil, then cleaning the graphene corroded by copper foil in deionized water for multiple times to obtain cleaned graphene, finally fishing out the graphene from the deionized water by using a silicon substrate (1) grown with a silicon dioxide insulating layer (2), removing the PMMA on the graphene, and performing secondary cleaning treatment, so that the graphene on the copper substrate is transferred to the silicon substrate (1) grown with the silicon dioxide insulating layer (2);
4. and (3) graphene patterning: the method comprises the steps of performing spin coating of photoresist on the surface of graphene transferred to a silicon substrate (1) on which a silicon dioxide insulating layer (2) grows by adopting a mechanical spin coating method, then drying the graphene on which the photoresist is spin coated, sequentially performing exposure, development and fixation to obtain a patterned photoresist mask for preparing a graphene band structure, etching the graphene on the photoresist mask by adopting oxygen plasma, finally soaking in acetone to remove the photoresist and cleaning to obtain the patterned graphene band structure;
5. patterning the metal: and (3) firstly, spin-coating photoresist on the surface of the patterned graphene structure obtained in the step four by adopting a mechanical spin-coating method, sequentially carrying out exposure, development and fixation to obtain a patterned photoresist mask for preparing the patterned metal groove structure (4), then depositing metal on the patterned photoresist mask for preparing the patterned metal groove structure (4) by adopting a magnetron sputtering method, finally soaking in an acetone solution for 24 hours to strip the metal and remove the photoresist to obtain the patterned metal groove structure (4) and a gate electrode structure, and completing the preparation of the graphene-metal groove metamaterial terahertz slow light device with double bands capable of being flexibly and selectively regulated.
6. The method for preparing the dual-band graphene-metal groove metamaterial terahertz slow light device as claimed in claim 5, wherein the oxidation process in the step one is a dry oxidation process, and the dry oxidation process is a process in which silicon reacts with oxygen at a high temperature to generate silicon dioxide.
7. The method for preparing the dual-band graphene-metal groove metamaterial terahertz slow light device as claimed in claim 5, wherein the heat treatment in the second step is that the copper foil substrate after pretreatment is heated to 1050 ℃, then the temperature is reduced to 1000 ℃, and then the temperature is continuously reduced to room temperature.
8. The method for preparing the dual-band graphene-metal groove metamaterial terahertz slow-light device capable of being flexibly and selectively regulated and controlled according to claim 5, is characterized in that the cleaning in the third step is to place graphene corroded with copper foil in deionized water, and obtain cleaned graphene after multiple times of cleaning; and the substrate transfer and secondary cleaning treatment in the third step comprises the steps of fishing the cleaned graphene from the bottom of deionized water by using a silicon substrate (1) with a silicon dioxide insulating layer (2) growing, finally soaking the fished cleaned graphene in acetone to remove PMMA (polymethyl methacrylate), and cleaning for multiple times by using deionized water to finish transferring the graphene on the copper substrate to the silicon dioxide insulating layer (2).
9. The preparation method of the graphene-metal groove metamaterial terahertz slow light device with the double bands capable of being flexibly and selectively regulated and controlled according to claim 5, wherein the step of the mechanical spin coating method in the fourth step is; spin-coating at 500r/min for 20s, then at 4000r/min for 60s, and then at 500r/min for 20s.
10. The method for preparing the dual-band graphene-metal groove metamaterial terahertz slow-light device as claimed in claim 5, wherein the metal is deposited by a magnetron sputtering method in step five, and the metal is Al, cu or Au and has a thickness of 0.2 μm.
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