CN109375390A - A kind of electrooptic modulator based on graphene - Google Patents
A kind of electrooptic modulator based on graphene Download PDFInfo
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- CN109375390A CN109375390A CN201811602852.2A CN201811602852A CN109375390A CN 109375390 A CN109375390 A CN 109375390A CN 201811602852 A CN201811602852 A CN 201811602852A CN 109375390 A CN109375390 A CN 109375390A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 52
- 239000002356 single layer Substances 0.000 claims abstract description 17
- 230000005540 biological transmission Effects 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 15
- 239000002023 wood Substances 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 230000033228 biological regulation Effects 0.000 claims description 4
- 238000003780 insertion Methods 0.000 claims description 3
- 230000037431 insertion Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 239000012780 transparent material Substances 0.000 claims description 2
- 230000008859 change Effects 0.000 abstract description 7
- 239000002344 surface layer Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000000411 transmission spectrum Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005624 perturbation theories Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2203/00—Function characteristic
- G02F2203/12—Function characteristic spatial light modulator
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The present invention discloses a kind of electrooptic modulator based on graphene, including following part: substrate, magnetic resonance phasmon super surface and single layer graphene film；The electrooptic modulator can make the transmissivity of the mid-infrared light through the electrooptic modulator change by changing the fermi level of single-layer graphene film, and the spectrally position of transmission peaks is kept not change.
Description
Technical field
The present invention relates to electro-optical modulation device fields, and in particular to it is a kind of applied to free space, work in it is infrared
Wave band, electrooptic modulator based on graphene.
Technical background
Light is modulated be realize display, integrated optical circuit, optical information transmitting, optical information processing and other use light conduct
The foundation stone of many applications of basic medium, occupies an important position in the research of optical field.The Electromagnetic Wave Innate Character of light assigns light
Many characteristics are for carrying information, such as frequency, phase, polarization and spin etc..However, most direct and most widely used be used for
The characteristic for carrying information is amplitude, or referred to as intensity.Traditional optical modulation device needs a kind of working media, such as various
Liquid crystal, acousto-optic crsytal of various kinds etc..These traditional working medias are usually bulk, this is resulted in based on conventional operation medium
Optical modulation device has the shortcomings that volume is big, modulation rate is low etc..In recent years, the design for being found to be optical modulator of graphene provides
New thinking.Carbon atomic layer of the graphene as single layer, at room temperature, carrier mobility may be up to 20000 cm2V- 1s-1If, it means that it can be using graphene as the working media of optical modulation device, operating rate has up to several hundred
The potentiality of GHz.Meanwhile the energy band of graphene has linear structure near dirac cone, it means that the current-carrying in graphene
Sub- concentration is sensitive enough, can be carried out by way of back gate voltage it is electrically doped so that its fermi level occur it is significant mobile.This
A little features make graphene be very suitable to the working media as electrooptic modulator.Electrooptic modulator based on graphene has body
Product is small, thickness is thin, rate is fast, the bright outlooks such as low in energy consumption.
The working principle used generally, based on the electrooptic modulator of graphene for, change the fermi level of graphene so that
The dielectric function of graphene changes, so that the formant of system spectrally moves, most according to material perturbation theory
It realizes under operation wavelength eventually, spectral intensity is opposite to change.However, there are one for the working method of this formant movement
Defect, that is, photodetector more or less always all has response in a frequency range, therefore, if formant frequency
The mobile range of rate is less than the frequency response range of photodetector, becomes then the output signal of photodetector will not have
Change.The potentiality of part electrooptic modulator on-off ratio will be lost in this way.In order to solve this defect, it is necessary to make the frequency of electrooptic modulator
Rate moving range expands, and the structure that this need be complicated and difficult designs；Or the laser signal light source fabulous using monochromaticjty, and
LED signal light source cannot be used, this will increase the cost of electrooptic modulator.
Summary of the invention
It is an object of the present invention to disclose a kind of use to alleviate the inherent shortcoming of the electrooptic modulator based on graphene
New working principle design, directly modulation can be carried out to the intensity of formant without cause formant it is mobile, work in
Middle infrared band, with good modulating performance, based on the electrooptic modulator of graphene.
A kind of electrooptic modulator based on graphene proposed by the present invention, which is characterized in that have the following characteristics that
1. the electrooptic modulator, structure includes following three parts: substrate, magnetic resonance phasmon manually super surface and
The graphene film of one layer of single layer；Wherein, infrared-transparent material in substrate use；Manually super surface is located at lining to magnetic resonance phasmon
On bottom；Single-layer graphene film is located at the top on the artificial super surface of magnetic resonance phasmon, and directly contacts；
2. the fermi level of single-layer graphene film can carry out dynamic by back gate voltage in the electrooptic modulator
Modulation；
3. manually there are magnetic resonance on super surface for magnetic resonance phasmon, and resonant frequency is with single layer in the electrooptic modulator
The raising of the fermi level of graphene film and blue shift；
4. manually there are Wood exceptions on super surface for magnetic resonance phasmon in the electrooptic modulator；
5. in the electrooptic modulator, the period phase on the artificial super surface of the refractive index of substrate and magnetic resonance phasmon
Match, so that when the fermi level of single-layer graphene film changes, the resonant frequency on the artificial super surface of magnetic resonance phasmon can be with
It intercouples extremely with Wood；
6. the electrooptic modulator works in middle infrared band, in free space, the incident light used polarizes for linearly polarized light
It is oriented parallel to substrate surface, the extension direction perpendicular to metal strip grating；
7. the operation wavelength of the electrooptic modulator is located at the neighbour of Wood exception, deviate 100 to 300 nanometers；
8. the working method of the electrooptic modulator is, mid-infrared light of the regulation through the artificial super surface of magnetic resonance phasmon
Transmissivity；During the work time, the resonant frequency of transmission peaks does not move, and only transmissivity changes；
9. the working principle of the electrooptic modulator is, by controlling the fermi level of single-layer graphene film, magnetic resonance is controlled
The resonant frequency on the super surface of phasmon, to control abnormal mutual of magnetic resonance and Wood in the super surface of magnetic resonance phasmon
Action intensity, it is final to realize under operation wavelength to the regulation of transmissivity；
10. the transmissivity of the electrooptic modulator is with the fermi level exponentially variation tendency of single-layer graphene film.
The electrooptic modulator its modulating performance degree of susceptibility when structural parameters change is no more than 10%；
The electrooptic modulator is combined according to different structural parameters, and insertion loss is 0.7dB to 1.5dB, and on-off ratio is
12 to 20, modulation depth is 92% to 95%.
A kind of electrooptic modulator proposed by the present invention, which is characterized in that the artificial super surface of the magnetic resonance phasmon,
It has the following characteristics that
1. including three-decker: the metal strip with apertured metal plate, intermediate dielectric coupling layer and lower layer on upper layer
Optical grating construction；
2. the apertured metal plate of epipelagic zone and lower metal grating are coupled into an entirety by intermediate coupling layer, deposit
In phasmon magnetic resonance.
The novel electrooptic modulator based on graphene proposed by the present invention, with new principle, by controlling single layer stone
The fermi level of black alkene piece, controls the resonant frequency on the super surface of magnetic resonance phasmon, so that it is super to control magnetic resonance phasmon
The interaction strength of magnetic resonance and Wood exception in surface, it is final to realize under operation wavelength to the regulation of transmissivity, and thoroughly
It penetrates peak not move spectrally, facilitates the raising of on-off ratio, modulation depth；It is proposed by the present invention novel based on graphene
Electrooptic modulator, insertion loss can be down to 0.7dB；The novel electrooptic modulator based on graphene proposed by the present invention, tool
There is extraordinary structural parameters tolerance.
Detailed description of the invention
Fig. 1 is the structural schematic diagram and its schematic diagram of the novel electrooptic modulator based on graphene proposed by the present invention
Main view；
Fig. 2 is the transmission spectrum of embodiment one with the variation of graphene fermi level；
Fig. 3 is the Distribution of Magnetic Field figure corresponding to transmission peaks when the fermi level of graphene is 0.1eV of embodiment one, and dotted line indicates
The position Al；
Fig. 4 is the Distribution of Magnetic Field figure corresponding to transmission peaks when the fermi level of graphene is 1.0eV of embodiment one, and dotted line indicates
The position Al；
Fig. 5 is the transmissivity at one transmission peaks of embodiment with the variation tendency of graphene fermi level, and wherein solid line is index letter
Number matched curve；
Fig. 6 is the comparison diagram for the transmission spectrum that different embodiments change with graphene fermi level, wherein " On/Off " expression
On-off ratio, " MD " indicate modulation depth.
Specific embodiment
Below in conjunction with attached drawing, realization of the invention is described in detail by specific embodiment.
Embodiment one
In the present embodiment, the novel electrooptic modulator based on graphene of proposition is described as follows: metal material choosing therein
With for aluminium, it is silicon that substrate material, which is selected, and coupling layer material selection is silica；Its structural parameters, as shown in Figure 1, L is equal to
1.6 microns, g is equal to 40 nanometers, and P is equal to 1.8 microns, and tm is equal to 50 nanometers, and td is 350 nanometers.Unless there are dictating otherwise, at it
In his embodiment, material is all made of the material in the present embodiment.Unless there are dictating otherwise, in other embodiments, structural parameters
The parameter being all made of in the present embodiment.
Embodiment two
In the present embodiment, L is equal to 1.5 microns.
Embodiment three
In the present embodiment, L is equal to 1.8 microns.
Example IV
In the present embodiment, td is equal to 150 nanometers.
Embodiment five
In the present embodiment, td is equal to 250 nanometers.
Embodiment six
In the present embodiment, the center of the super surface upper and lower level of magnetic resonance phasmon generates 100 nanometers of dislocation.
Embodiment seven
In the present embodiment, the center of the super surface upper and lower level of magnetic resonance phasmon generates 200 nanometers of dislocation.
As shown in Figure 1, for the novel electrooptic modulator based on graphene proposed by the present invention structural schematic diagram and its
Front view, mark finishes structure parameter in front view.Fig. 2 is transmission of the embodiment one under different graphene fermi levels
Spectrum, it can be seen that in Wood exception, transmissivity decays to rapidly zero.In Fig. 2, dotted line is labelled with the position of operation wavelength, can
To see, with the rising of graphene fermi level, transmissivity is become larger, and the position for the transmission peaks that work is not moved therewith
It is dynamic.As a comparison, in Fig. 2, the inoperative transmission peaks positioned at the abnormal left side Wood can be moved with the variation of fermi level.
Fig. 3 is the Distribution of Magnetic Field figure corresponding to transmission peaks when the fermi level of graphene is 0.1eV of embodiment one, it can be seen that coupling
Magnetic field in layer is remarkably reinforced, and may infer that the generation of magnetic resonance.Therefore, the transmission peaks in the abnormal left side Wood derived from it is equal from
With the raising of graphene fermi level blue shift occurs for excimer magnetic resonance, formant, gradually interacts extremely with Wood.
Fig. 4 is the Distribution of Magnetic Field figure corresponding to transmission peaks when the fermi level of graphene is 1.0eV of embodiment one, it can be seen that with figure
Significant difference occurs for the Distribution of Magnetic Field in 3, and the magnetic field in coupling layer is obviously weakened, and the magnetic field in the metal plate gap of upper layer is bright
Aobvious enhancing reflects that phasmon magnetic resonance interacts extremely with Wood.Fig. 5 is the transmission at one transmission peaks of embodiment
Rate with graphene fermi level variation tendency, it can be seen that apparent nonlinear trend is presented in the variation of transmissivity, and meets
Exponential relationship.Fig. 6 is the comparison diagram for the transmission spectrum that different embodiments changes with graphene fermi level.It can see
Arrive, under different embodiments, the modulation effect of the novel electrooptic modulator based on graphene proposed by the present invention substantially not by
The influence of Parameters variation has extraordinary experimental error tolerance.
It is finally noted that the purpose for publicizing and implementing example is to help to further understand the present invention, but this field
Technical staff be understood that without departing from the spirit and scope of the invention and the appended claims, it is various replacement and repair
It is all possible for changing.Therefore, the present invention should not be limited to embodiment disclosure of that, and the scope of protection of present invention is to weigh
Subject to the range that sharp claim defines.
Claims (2)
1. a kind of electrooptic modulator based on graphene, which is characterized in that have the following characteristics that
1. the electrooptic modulator, structure includes following three parts: substrate, magnetic resonance phasmon manually super surface and
The graphene film of one layer of single layer；Wherein, infrared-transparent material in substrate use；Manually super surface is located at lining to magnetic resonance phasmon
On bottom；Single-layer graphene film is located at the top on the artificial super surface of magnetic resonance phasmon, and directly contacts；
2. the fermi level of single-layer graphene film can carry out dynamic tune by back gate voltage in the electrooptic modulator
System；
3. manually there are magnetic resonance on super surface for magnetic resonance phasmon, and resonant frequency is with single layer in the electrooptic modulator
The raising of the fermi level of graphene film and blue shift；
4. manually there are Wood exceptions on super surface for magnetic resonance phasmon in the electrooptic modulator；
5. in the electrooptic modulator, the period phase on the artificial super surface of the refractive index of substrate and magnetic resonance phasmon
Match, so that when the fermi level of single-layer graphene film changes, the resonant frequency on the artificial super surface of magnetic resonance phasmon can be with
It intercouples extremely with Wood；
6. the electrooptic modulator works in middle infrared band, in free space, the incident light used polarizes for linearly polarized light
It is oriented parallel to substrate surface, the extension direction perpendicular to metal strip grating；
7. the operation wavelength of the electrooptic modulator is located at the neighbour of Wood exception, deviate 100 to 300 nanometers；
8. the working method of the electrooptic modulator is, mid-infrared light of the regulation through the artificial super surface of magnetic resonance phasmon
Transmissivity；During the work time, the resonant frequency of transmission peaks does not move, and only transmissivity changes；
9. the transmissivity of the electrooptic modulator is with the fermi level exponentially variation tendency of single-layer graphene film；
10. the electrooptic modulator combines, insertion loss 0.7dB, on-off ratio 20 according to different structural parameters, modulation
Depth is 95%.
2. a kind of electrooptic modulator as described in claim 1, which is characterized in that the artificial super table of the magnetic resonance phasmon
Face has the following characteristics that
1. including three-decker: the metal strip with apertured metal plate, intermediate dielectric coupling layer and lower layer on upper layer
Optical grating construction；
2. the apertured metal plate of epipelagic zone and lower metal grating are coupled into an entirety by intermediate coupling layer,
There are phasmon magnetic resonance.
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Cited By (7)
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| CN110133876A (en) * | 2019-06-18 | 2019-08-16 | 南开大学 | A kind of super surface lens of Terahertz graphene and design method of focus adjustable |
| CN110515224A (en) * | 2019-09-04 | 2019-11-29 | 哈尔滨理工大学 | A kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation |
| CN111123418A (en) * | 2020-01-19 | 2020-05-08 | 中国人民解放军国防科技大学 | Graphene plasmon cavity-perfect absorber coupling nano resonance device |
| CN111258055A (en) * | 2020-02-12 | 2020-06-09 | 贵州民族大学 | Light-operated photoswitch |
| WO2020178558A1 (en) | 2019-03-06 | 2020-09-10 | Cambridge Enterprise Limited | Transmitters and receivers |
| CN111983827A (en) * | 2020-08-21 | 2020-11-24 | 苏州大学 | Near-infrared broadband optical switch based on graphene absorption enhancement |
| CN112504459A (en) * | 2020-11-18 | 2021-03-16 | 中国科学院上海技术物理研究所 | Anisotropic plasmon resonant cavity graphene polarization detector and design method |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020178558A1 (en) | 2019-03-06 | 2020-09-10 | Cambridge Enterprise Limited | Transmitters and receivers |
| US11695479B2 (en) | 2019-03-06 | 2023-07-04 | Consorzio Nazionale Interuniversitario Per Le Telecomunicazioni | Transmitters and receivers |
| CN110133876A (en) * | 2019-06-18 | 2019-08-16 | 南开大学 | A kind of super surface lens of Terahertz graphene and design method of focus adjustable |
| CN110515224A (en) * | 2019-09-04 | 2019-11-29 | 哈尔滨理工大学 | A kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation |
| CN110515224B (en) * | 2019-09-04 | 2022-11-08 | 哈尔滨理工大学 | Graphene-metal groove metamaterial terahertz slow-light device with double bands capable of being flexibly and selectively regulated |
| CN111123418A (en) * | 2020-01-19 | 2020-05-08 | 中国人民解放军国防科技大学 | Graphene plasmon cavity-perfect absorber coupling nano resonance device |
| CN111123418B (en) * | 2020-01-19 | 2021-11-26 | 中国人民解放军国防科技大学 | Graphene plasmon cavity-perfect absorber coupling nano resonance device |
| CN111258055A (en) * | 2020-02-12 | 2020-06-09 | 贵州民族大学 | Light-operated photoswitch |
| CN111983827A (en) * | 2020-08-21 | 2020-11-24 | 苏州大学 | Near-infrared broadband optical switch based on graphene absorption enhancement |
| CN111983827B (en) * | 2020-08-21 | 2022-04-26 | 苏州大学 | Near-infrared broadband optical switch based on graphene absorption enhancement |
| CN112504459A (en) * | 2020-11-18 | 2021-03-16 | 中国科学院上海技术物理研究所 | Anisotropic plasmon resonant cavity graphene polarization detector and design method |
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| Publication number | Publication date |
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| CN109375390B (en) | 2022-03-25 |
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