CN109343159A - A kind of non-linear laser clipping structure based on 1-D photon crystal - Google Patents
A kind of non-linear laser clipping structure based on 1-D photon crystal Download PDFInfo
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- CN109343159A CN109343159A CN201811602766.1A CN201811602766A CN109343159A CN 109343159 A CN109343159 A CN 109343159A CN 201811602766 A CN201811602766 A CN 201811602766A CN 109343159 A CN109343159 A CN 109343159A
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
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Abstract
The non-linear laser clipping structure based on 1-D photon crystal that the invention discloses a kind of, the non-linear laser clipping structure is made of the photonic crystal arranged in certain sequence with three kinds of media, if three kinds of media are respectively A, B, C, then the structure of photonic crystal is (AB)6CAC(AB)6, wherein three kinds of medium As, B and C are respectively diamond, SrF suitable for the photon crystal structure of 532nm laser clipping2With CS3-68 glass, the thickness of dielectric layer A, B and C are respectively 184.1nm, 92.0nm and 138.1nm；Three kinds of medium As, B and C are respectively diamond, CeF suitable for the photon crystal structure of 1064nm laser clipping3And CdTe, the thickness of dielectric layer A, B and C are respectively 149.3nm, 74.7nm and 112.0nm.The present invention can be effectively used in 532nm and 1064nm wavelength laser limiter system, realize to the high transmittance of dim light and the highly attenuating rate of strong light.
Description
Technical field
The present invention relates to photonic crystals and non-linear optical field, and in particular to a kind of with the one-dimensional of nonlinear transmission
Photor crystal laser clipping structure can be applied to 532nm and 1064nm laser requirement dim light high transmittance and the highly attenuating rate of strong light
Non-linear clipping application.
Background technique
With extensive use of the laser in industry, scientific research, medical treatment, lasing safety is increasingly paid attention to.Because of human eye and respectively
Electrooptical device in class equipment is likely to result in irreversible damage under the irradiation of light laser, so needing to carry out light laser
Clipping.And less power laser is not required to clipping but also as signal detection light, therefore lasing safety structure is made to have non-linear spy
Property is significant.Laser if common wavelength is 532nm and 1064nm is can not only be used under strong light to people and equipment nocuousness
Laser, and available laser can be used as under dim light, therefore need to design a kind of has higher light transmittance, in strong light under dim light
Under have the lasing safety structure of higher attenuation rate.The research of non-linear laser clipping structure is mainly based upon non-linear suction at present
The optical effects such as receipts, scattering and refraction.Wherein, anti-saturated absorption is to be based on commonly protecting in non-linear absorption optical Limiting field
Means, but the factors such as specific absorption bands limit its development after its stability and synthesis.Such as Soon in 2003 et al.
Using the saturated absorption and anti-saturated absorption principle of kerr medium in 1-D photon crystal, the Limiting effect to strong light is realized,
But its Limiting effect is bad.Optical Limiting output amplitude based on nonlinear scattering principle is lower, but limiting threshold is very high, it is difficult to same
It is highly attenuating under highly transmissive and strong light under Shi Shixian dim light；Optical Limiting threshold value based on nonlinear refraction principle is lower, but real
Structure too complex in the application of border.In addition, the VO based on Transformation Principle2Film is also a kind of common laser clipping means,
But its method for regulating and controlling light transmission rate by temperature is not easy to control.
Since Yablonovitch and John in 1987 respectively proposes the concept of photonic crystal, photonic crystal has become light
One important research field of electronic material.The different dielectric of the refractive index photon that spatially periodic arrangement is constituted is brilliant
The periodic modulation by dielectric substance dielectric constant is known from experience, to generate photon band gap.And in photonic crystal periodically electricity
Defect layer (its dielectric dielectric constant is different from the dielectric constant of remaining periodic dielectric layer) are introduced in dielectric layer, make light
There is defect state in sub- forbidden band, allows the light of specific wavelength by photonic crystal, can make micro-resonant cavity, ultra-narrow bandwidth filter and light
Waveguide etc..
By photonic crystal applications in laser clipping, it is anti-to have been achieved with the YAG laser based on the reflection of 1-D photon crystal band gap
Goggle design, but this method cannot be realized simultaneously to the highly attenuating and dim light highly transmissive of strong light, and linear laser clipping is belonged to
Scope.The non-linear laser clipping structure based on 1-D photon crystal, but its transmission under dim light are realized within 1996 for the first time
Rate is 50%, and Limiting effect is bad.Having several tunable optic filters based on photonic crystal at present can be used for non-linear laser limit
Width.Wherein, it using liquid crystal as the non-linear laser clipping structure of One-Dimensional Photonic Crystal Defect layer, lacks there are response speed is slower
It falls into；The tunable optic filter that piezooptical effect is realized, the problem for having sensitivity not high are seen using Jie of photonic crystal dielectric layer；Pass through
The method for adjusting incident light angle to realize filter tunable function, azimuthal control accuracy requirement are high, it is more difficult to be applied to
In actual laser clipping；Tunable optic filter based on two-dimensional photon crystal structure, preparation difficulty and non-linear limiting threshold
It is excessively high.
In order to solve defect of the existing technology, the present invention devises a kind of novel for 532nm and 1064nm laser
1-D photon crystal clipping structure, using existing linear medium and nonlinear dielectric respectively as the periodicity of photonic crystal
Dielectric layer and double defect layers, realize to the highly transmissive of the highly attenuating and dim light of strong light.
Summary of the invention
532nm can be directed to the technical problem to be solved by the present invention is to solve the above shortcomings of the prior art and to provide a kind of
It is realized with 1064nm laser and the highly transmissive non-linear laser based on 1-D photon crystal of the highly attenuating and dim light of strong light is limited
Width structure.
To realize the above-mentioned technical purpose, the technical scheme adopted by the invention is as follows:
A kind of non-linear laser clipping structure based on 1-D photon crystal, it is characterized in that: the non-linear laser clipping structure by
It is constituted with the photonic crystal that three kinds of media arrange in certain sequence, if three kinds of media are respectively A, B and C, then the knot of photonic crystal
Structure is (AB)6CAC(AB)6, wherein three kinds of medium As, B and C are respectively suitable for the photon crystal structure of 532nm laser clipping
Diamond, SrF2With CS3-68 glass, the thickness of dielectric layer A, B and C are respectively 184.1nm, 92.0nm and 138.1nm；It is suitable
It is respectively diamond, CeF for three kinds of medium As, B and C in the photon crystal structure of 1064nm laser clipping3And CdTe, medium
The thickness of layer A, B and C are respectively 149.3nm, 74.7nm and 112.0nm.
To optimize above-mentioned technical proposal, the concrete measure taken further include:
In embodiment, the photonic crystal suitable for 532nm laser clipping is in optical power density less than 1 × 107W/m2When, the photon
The optical transmittance of crystal clipping structure is 86.4%, when optical power density is greater than 6 × 1010W/m2When, optical transmittance is
0.02%。
In embodiment, suitable for the photonic crystal of 532nm laser clipping, the refractive index of medium A (diamond) is
2.425, extinction coefficient 0, medium B (SrF2) refractive index be 1.4887, extinction coefficient 0.00784, dielectric layer C
(CS3-68 glass) is defect layer, and linear refractive index 1.5, nonlinear viscoelastic piles are 2.3 × 10-10cm2/ W, disappears
Backscatter extinction logarithmic ratio is 0.00011.
In embodiment, the photonic crystal suitable for 1064nm laser clipping is greater than 3 × 10 in optical power density14W/m2When,
The photonic crystal clipping feature optical transmitance is 0.3%, when optical power density is less than 1 × 1010W/m2When, optical transmittance
It is 79.8%.
In embodiment, suitable for the photonic crystal of 1064nm laser clipping, the refractive index of medium A (diamond) is
2.3902, extinction coefficient 0, medium B (CeF3) refractive index be 1.62, extinction coefficient 0.00188, dielectric layer C (CdTe)
For defect layer, linear refractive index 2.746, nonlinear viscoelastic piles are -1 × 10-12cm2/ W, extinction coefficient are
0.000153。
The beneficial effects of the present invention are: compared with traditional sharp optical limiting materials, design structure of the present invention is simple, compared with liquid
Physical property of the Earth's materials is more stable, and can realize non-linear light transmittance.The present invention can be effectively used for 532nm and 1064nm wavelength
In laser limiter system, realize to the high transmittance of dim light and the highly attenuating rate of strong light.
Detailed description of the invention
Fig. 1 is 532nm laser clipping constructional cross sectional view；
Fig. 2 is 1064nm laser clipping constructional cross sectional view；
Fig. 3 is the 3 d light fields distribution map of 532nm laser clipping structure；
Fig. 4 is the corresponding top view of Fig. 3；
Fig. 5 is the 3 d light fields distribution map of 1064nm laser clipping structure；
Fig. 6 is the corresponding top view of Fig. 5；
Fig. 7 is 532nm laser clipping structure transmitance with wavelength change relational graph；
Fig. 8 is 1064nm laser clipping structure transmitance with wavelength change relational graph；
Fig. 9 is light transmission rate spectrum of the 532nm laser clipping structure under different incident optical power densities；
Figure 10 is light transmission rate spectrum of the 1064nm laser clipping structure under different incident optical power densities；
Figure 11 is the curve graph that 532nm wavelength light transmission rate changes with incident optical power density；
Figure 12 is the curve graph that 1064nm wavelength light transmission rate changes with incident optical power density.
Specific embodiment
The embodiment of the present invention is described in further detail below in conjunction with attached drawing.
The present invention has separately designed a kind of with non-linear light transmission for 532nm and 1064nm wavelength laser limiter system
The 1-D photon crystal laser clipping structure of the homogenous configuration difference composition medium of rate.For 532nm laser clipping structure, medium
A is chosen to be C (diamond), refractive index 2.425, extinction coefficient 0.Medium B is chosen to be SrF2(strontium fluoride), refractive index are
1.4887 extinction coefficient 0.00784.Defect layer C is chosen to be CS3-68 glass, linear refractive index 1.5, non-linear folding
Penetrating rate coefficient is 2.3 × 10-10cm2/ W, extinction coefficient 0.00011.The thickness of dielectric layer A, B and C be respectively 184.1nm,
92.0nm and 138.1nm.When incident optical power density is less than 1 × 107W/m2When, optical transmittance 86.4%, when incident light function
Rate density is greater than 6 × 1010W/m2When, optical transmittance 0.02%.For 1064nm laser clipping structure, medium A is chosen to be C
(diamond), refractive index 2.3902, extinction coefficient 0.Medium B is chosen to be CeF3(cerium fluoride), refractive index 1.62, delustring
Coefficient is 0.00188.Defect layer C is chosen to be CdTe (cadmium telluride), linear refractive index 2.746, nonlinear viscoelastic piles
It is -1 × 10-12cm2/ W, extinction coefficient 0.000153.The thickness of dielectric layer A, B and C be respectively 149.3nm, 74.7nm and
112.0nm.When incident optical power density is greater than 3 × 1014W/m2When, which is 0.3%,
When incident optical power density is less than 1 × 1010W/m2When, optical transmittance 79.8%.
As a length of 532nm or 1064nm of incident light wave, under low incidence optical power density, which is placed exactly in defect state
Position has high transmittance；When incident optical power density increases, defect state position is moved, at 532nm or 1064nm
Transmitance decline, reaches the optical Limiting effect under high incident optical power density.
For photor crystal laser clipping structure of the invention, we use finite element method, in conjunction with finite element fraction
Analysis software COMSOL Multiphysics is emulated, and is added the electromagnetic wave frequency domain physical field in radio-frequency module, is obtained the present invention
The optics mode distributions of structure obtain photonic crystal transmitance with incident optical power density by changing incident optical power density
Variation relation.As shown in Figures 3 to 6, it can be seen that the defect state mode distributions of structure of the invention.In photonic crystal defect state
In communication mode, the energy of light wave concentrates on defect state position, and non-linear effect is more obvious.Fig. 7 and Fig. 8 is structure of the invention
Transmitance-wavelength relationship figure.
As shown in Figure 9 and Figure 10, it can be seen that nonlinear characteristic of the invention.For 532nm laser clipping structure, choose
Incident optical power density is 1.8 × 106W/m2、1.3×109W/m2With 1 × 1010W/m2, make transmitance-wavelength relationship figure respectively.
As can be seen that there is biggish movement in defect state position, corresponding 532nm wavelength with the increase of incident optical power density
Transmitance decline, is down to 0.02% from 86.4%, realizes the effect of non-linear clipping.Similarly, for 1064nm laser clipping knot
Structure, choosing incident optical power density is 7 × 1010W/m2、7×1011W/m2With 4.5 × 1012W/m2, make transmitance-wavelength respectively
Relational graph.As can be seen that equally there is biggish movement in defect state position with the increase of incident optical power density, it is corresponding
The transmitance of 1064nm wavelength declines, and is down to 0.3% from 79.8%, realizes the effect of non-linear clipping.
As is illustrated by figs. 11 and 12, by changing incident optical power density, transmitance-incident optical power density relationship is obtained
Figure.As can be seen that working as a length of 532nm of incident light wave and incident optical power density less than 1 × 107W/m2When, photon crystal structure can
Realize high light transmission rate；When incident optical power density is greater than 6 × 1010W/m2When, light transmission rate is less than 0.02%.Work as incident light
Wavelength is 1064nm and incident optical power density is less than 1 × 1010W/m2When, photon crystal structure can realize high light transmission rate；
When incident optical power density is greater than 3 × 1014W/m2When, light transmission rate is less than 0.3%.
The above is only the preferred embodiment of the present invention, protection scope of the present invention is not limited merely to above-described embodiment,
All technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It should be pointed out that for the art
For those of ordinary skill, several improvements and modifications without departing from the principles of the present invention should be regarded as protection of the invention
Range.
Claims (5)
1. a kind of non-linear laser clipping structure based on 1-D photon crystal, it is characterized in that: the non-linear laser clipping structure
It is made of the photonic crystal arranged in certain sequence with three kinds of media, if three kinds of media are respectively A, B and C, then photonic crystal
Structure is (AB)6CAC(AB)6, wherein three kinds of medium As, B and C difference suitable for the photon crystal structure of 532nm laser clipping
For diamond, SrF2With CS3-68 glass, the thickness of dielectric layer A, B and C are respectively 184.1nm, 92.0nm and 138.1nm；
Three kinds of medium As, B and C are respectively diamond, CeF suitable for the photon crystal structure of 1064nm laser clipping3And CdTe, it is situated between
The thickness of matter layer A, B and C are respectively 149.3nm, 74.7nm and 112.0nm.
2. a kind of non-linear laser clipping structure based on 1-D photon crystal according to claim 1, it is characterized in that: suitable
Photonic crystal for 532nm laser clipping is in optical power density less than 1 × 107W/m2When, the light of the photonic crystal clipping structure
Learning transmitance is 86.4%, when optical power density is greater than 6 × 1010W/m2When, optical transmittance 0.02%.
3. a kind of non-linear laser clipping structure based on 1-D photon crystal according to claim 2, it is characterized in that: suitable
In photonic crystal for 532nm laser clipping, the refractive index of medium A (diamond) is 2.425, extinction coefficient 0, medium B
(SrF2) refractive index be 1.4887, extinction coefficient 0.00784, dielectric layer C (CS3-68 glass) be defect layer, line
Property refractive index be 1.5, nonlinear viscoelastic piles be 2.3 × 10-10cm2/ W, extinction coefficient 0.00011.
4. a kind of non-linear laser clipping structure based on 1-D photon crystal according to claim 1, it is characterized in that: suitable
Photonic crystal for 1064nm laser clipping is greater than 3 × 10 in optical power density14W/m2When, the photonic crystal clipping structure light
Learning transmitance is 0.3%, when optical power density is less than 1 × 1010W/m2When, optical transmittance 79.8%.
5. a kind of non-linear laser clipping structure based on 1-D photon crystal according to claim 4, it is characterized in that: suitable
In photonic crystal for 1064nm laser clipping, the refractive index of medium A (diamond) is 2.3902, and extinction coefficient 0 is situated between
Matter B (CeF3) refractive index be 1.62, extinction coefficient 0.00188, dielectric layer C (CdTe) be defect layer, linear refractive index
It is 2.746, nonlinear viscoelastic piles are -1 × 10-12cm2/ W, extinction coefficient 0.000153.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110809356A (en) * | 2019-10-23 | 2020-02-18 | 南京航空航天大学 | Plasma terahertz waveguide generation device |
| CN111258147A (en) * | 2020-02-24 | 2020-06-09 | 南京航空航天大学 | One-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect |
| CN113238426A (en) * | 2021-05-18 | 2021-08-10 | 东南大学 | Optical limiting device based on quantum dot nonlinearity and nonlinear film preparation method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101526713A (en) * | 2009-04-20 | 2009-09-09 | 中山大学 | All-optical switch and design method thereof |
| CN103472598A (en) * | 2013-10-12 | 2013-12-25 | 太原理工大学 | One-dimensional magnetic photonic crystal for implementing optical isolation |
-
2018
- 2018-12-26 CN CN201811602766.1A patent/CN109343159B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101526713A (en) * | 2009-04-20 | 2009-09-09 | 中山大学 | All-optical switch and design method thereof |
| CN103472598A (en) * | 2013-10-12 | 2013-12-25 | 太原理工大学 | One-dimensional magnetic photonic crystal for implementing optical isolation |
Non-Patent Citations (2)
| Title |
|---|
| 周丽宏: "《一维非线性光子晶体光限幅器的数值分析》", 《中国优秀硕士学位论文全文数据库基础科学辑》 * |
| 耿继国等: "《双缺陷光子晶体禁带结构特性研究》", 《光电子激光》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110809356A (en) * | 2019-10-23 | 2020-02-18 | 南京航空航天大学 | Plasma terahertz waveguide generation device |
| CN110809356B (en) * | 2019-10-23 | 2021-01-15 | 南京航空航天大学 | Plasma terahertz waveguide generation device |
| CN111258147A (en) * | 2020-02-24 | 2020-06-09 | 南京航空航天大学 | One-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect |
| CN111258147B (en) * | 2020-02-24 | 2021-04-27 | 南京航空航天大学 | One-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect |
| CN113238426A (en) * | 2021-05-18 | 2021-08-10 | 东南大学 | Optical limiting device based on quantum dot nonlinearity and nonlinear film preparation method thereof |
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