CN109343159B - Nonlinear laser amplitude limiting structure based on one-dimensional photonic crystal - Google Patents
Nonlinear laser amplitude limiting structure based on one-dimensional photonic crystal Download PDFInfo
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- 230000000670 limiting effect Effects 0.000 title claims abstract description 64
- 239000004038 photonic crystal Substances 0.000 title claims abstract description 55
- 238000002834 transmittance Methods 0.000 claims abstract description 33
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 10
- 239000010432 diamond Substances 0.000 claims abstract description 10
- 229910004613 CdTe Inorganic materials 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims abstract description 5
- 229910001637 strontium fluoride Inorganic materials 0.000 claims abstract description 5
- 229910020187 CeF3 Inorganic materials 0.000 claims abstract description 4
- 230000003287 optical effect Effects 0.000 claims description 26
- 230000008033 biological extinction Effects 0.000 claims description 18
- 230000007547 defect Effects 0.000 claims description 18
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- FVRNDBHWWSPNOM-UHFFFAOYSA-L strontium fluoride Chemical compound [F-].[F-].[Sr+2] FVRNDBHWWSPNOM-UHFFFAOYSA-L 0.000 description 2
- 238000000411 transmission spectrum Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
- G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
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Abstract
The invention discloses a nonlinear laser amplitude limiting structure based on a one-dimensional photonic crystal, which is formed by arranging photons in a certain sequence by three mediaThe structure of the photonic crystal is (AB) if the three media are A, B, C respectively6CAC(AB)6Wherein, the three mediums A, B and C in the photonic crystal structure suitable for 532nm laser amplitude limiting are respectively diamond and SrF2CS3-68 glass, the thicknesses of the dielectric layers A, B and C are 184.1nm, 92.0nm and 138.1nm respectively; three media A, B and C in the photonic crystal structure suitable for 1064nm laser amplitude limiting are respectively diamond and CeF3And CdTe, dielectric layers A, B and C have thicknesses of 149.3nm, 74.7nm and 112.0nm, respectively. The invention can be effectively used in 532nm and 1064nm wavelength laser amplitude limiting systems to realize high transmittance of weak light and high attenuation of strong light.
Description
Technical Field
The invention relates to the field of photonic crystals and nonlinear optics, in particular to a one-dimensional photonic crystal laser amplitude limiting structure with nonlinear transmittance, which can be applied to nonlinear amplitude limiting application occasions requiring weak light high transmittance and strong light high attenuation rate of 532nm and 1064nm lasers.
Background
With the wide application of laser in industry, scientific research and medical treatment, laser protection is increasingly gaining attention. Since the human eye and the optoelectronic devices in various devices may cause irreversible damage under the irradiation of the strong laser, the strong laser needs to be limited. And the laser with weaker power can be used as signal detection light without amplitude limiting, so that the laser protection structure has the nonlinear characteristic and has important significance. For example, common laser with wavelengths of 532nm and 1064nm can be used as laser harmful to people and equipment under strong light and can also be used as available laser under weak light, so that a laser protection structure with high light transmittance under weak light and high attenuation rate under strong light needs to be designed. At present, the methodThe research of the nonlinear laser amplitude limiting structure is mainly based on optical effects such as nonlinear absorption, scattering and refraction. The reverse saturation absorption is a protection means commonly used in the field of nonlinear absorption light amplitude limiting, but the development of the reverse saturation absorption is limited by factors such as stability, a specific absorption waveband after synthesis and the like. For example, Soon in 2003, et al, utilize the principle of saturation absorption and reverse saturation absorption of kerr medium in a one-dimensional photonic crystal to achieve an amplitude limiting effect on strong light, but the amplitude limiting effect is not good. The light amplitude limiting output amplitude based on the nonlinear scattering principle is low, but the amplitude limiting threshold is very high, so that high transmission under weak light and high attenuation under strong light are difficult to realize simultaneously; the optical clipping threshold based on the nonlinear refraction principle is low, but the structure in practical application is too complex. In addition, VO based on the principle of phase change2The film is also a commonly used laser amplitude limiting means, but the method for regulating and controlling the light transmittance through temperature is not easy to control.
Since Yablonovitch and John proposed the concept of photonic crystals, respectively, in 1987, photonic crystals have become an important research field of optoelectronic materials. Photonic crystals formed by spatially periodic arrangements of dielectrics with different refractive indices undergo periodic modulation of the dielectric constant of the dielectric material, thereby creating a photonic bandgap. And a defect layer (the dielectric constant of the dielectric is different from that of the rest of the periodic dielectric layers) is introduced into the periodic dielectric layer of the photonic crystal, so that a photonic forbidden band is in a defect state, light with specific wavelength is allowed to pass through the photonic crystal, and a micro resonant cavity, an ultra-narrow band filter, an optical waveguide and the like can be manufactured.
The photonic crystal is applied to laser amplitude limiting, and YAG laser protective mirror design based on one-dimensional photonic crystal band gap reflection is realized, but the method cannot realize high attenuation of strong light and high transmission of weak light at the same time, and belongs to the linear laser amplitude limiting category. The nonlinear laser amplitude limiting structure based on the one-dimensional photonic crystal is realized for the first time in 1996, but the transmittance of the nonlinear laser amplitude limiting structure under weak light is 50%, and the amplitude limiting effect is poor. Several photonic crystal based tunable filters are currently available for nonlinear laser limiting. The liquid crystal is used as a nonlinear laser amplitude limiting structure of a one-dimensional photonic crystal defect layer, and the defect with low response speed exists; the tunable filter realized by the mesoscopic calendaring effect of the photonic crystal medium layer has the problem of low sensitivity; the method for realizing the tunable function of the filter by adjusting the angle of incident light has high requirement on the control precision of the azimuth angle and is difficult to be applied to actual laser amplitude limiting; the tunable filter based on the two-dimensional photonic crystal structure is difficult to prepare and has an excessively high nonlinear amplitude limiting threshold.
Aiming at lasers of 532nm and 1064nm, the invention designs a novel one-dimensional photonic crystal amplitude limiting structure, and utilizes the existing linear medium and nonlinear medium as the periodic medium layer and double defect layer of the photonic crystal respectively, thereby realizing high attenuation of strong light and high transmission of weak light.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a nonlinear laser amplitude limiting structure based on one-dimensional photonic crystals, which can realize high attenuation of strong light and high transmission of weak light aiming at 532nm and 1064nm lasers aiming at the defects of the prior art.
In order to achieve the technical purpose, the technical scheme adopted by the invention is as follows:
a nonlinear laser amplitude limiting structure based on a one-dimensional photonic crystal is characterized in that: the nonlinear laser amplitude limiting structure is composed of photonic crystals arranged in a certain sequence by three media, wherein the three media are respectively A, B and C, and the photonic crystals have the structure of (AB)6CAC(AB)6Wherein, the three mediums A, B and C in the photonic crystal structure suitable for 532nm laser amplitude limiting are respectively diamond and SrF2CS3-68 glass, the thicknesses of the dielectric layers A, B and C are 184.1nm, 92.0nm and 138.1nm respectively; three media A, B and C in the photonic crystal structure suitable for 1064nm laser amplitude limiting are respectively diamond and CeF3And CdTe, dielectric layers A, B and C have thicknesses of 149.3nm, 74.7nm and 112.0nm, respectively.
In order to optimize the technical scheme, the specific measures adopted further comprise:
in an embodiment, the photonic crystal suitable for 532nm laser amplitude limiting has an optical power density of less than 1 × 107W/m2When the optical transmittance of the photonic crystal amplitude limiting structure is 86.4 percent, the optical power density is more than 6 × 1010W/m2When the refractive index is too high, the optical transmittance is 0.02%.
In the example, in the photonic crystal suitable for 532nm laser amplitude limiting, the refractive index of the medium A (diamond) is 2.425, the extinction coefficient is 0, and the medium B (SrF)2) Has a refractive index of 1.4887, an extinction coefficient of 0.00784, a dielectric layer C (CS3-68 glass) as a defect layer, a linear refractive index of 1.5, and a nonlinear refractive index of 2.3 × 10-10cm2and/W, the extinction coefficient is 0.00011.
In an embodiment, the photonic crystal suitable for 1064nm laser amplitude limiting has the optical power density of more than 3 × 1014W/m2When the optical transmittance of the photonic crystal amplitude limiting structure is 0.3 percent, the optical power density is less than 1 × 1010W/m2When the refractive index is high, the optical transmittance is 79.8%.
In the embodiment, in the photonic crystal suitable for 1064nm laser amplitude limiting, the refractive index of the medium A (diamond) is 2.3902, the extinction coefficient is 0, and the medium B (CeF)3) The refractive index is 1.62, the extinction coefficient is 0.00188, the medium layer C (CdTe) is a defect layer, the linear refractive index is 2.746, and the nonlinear refractive index is-1 × 10-12cm2and/W, extinction coefficient 0.000153.
The invention has the beneficial effects that: compared with the traditional laser amplitude limiting material, the laser amplitude limiting material has a simple design structure, is more stable than liquid substances in physical properties, and can realize nonlinear light transmittance. The invention can be effectively used in 532nm and 1064nm wavelength laser amplitude limiting systems to realize high transmittance of weak light and high attenuation of strong light.
Drawings
FIG. 1 is a cross-sectional view of a 532nm laser amplitude limiting structure;
FIG. 2 is a cross-sectional view of a 1064nm laser amplitude limiting structure;
FIG. 3 is a three-dimensional optical field distribution diagram of a 532nm laser clipping structure;
FIG. 4 is a top view corresponding to FIG. 3;
FIG. 5 is a three-dimensional optical field distribution diagram of a 1064nm laser clipping structure;
FIG. 6 is a top view corresponding to FIG. 5;
FIG. 7 is a graph showing the change of transmittance of a 532nm laser amplitude limiting structure with wavelength;
FIG. 8 is a graph showing the transmittance of a 1064nm laser limiting structure as a function of wavelength;
FIG. 9 is a light transmittance spectrum of a 532nm laser limiting structure at different incident light power densities;
FIG. 10 is a light transmittance spectrum of a 1064nm laser limiting structure at different incident light power densities;
FIG. 11 is a graph of 532nm wavelength light transmittance as a function of incident light power density;
FIG. 12 is a graph of the light transmittance at a wavelength of 1064nm as a function of incident light power density.
Detailed Description
Embodiments of the present invention are described in further detail below with reference to the accompanying drawings.
Aiming at 532nm and 1064nm wavelength laser amplitude limiting systems, the invention respectively designs a one-dimensional photonic crystal laser amplitude limiting structure with nonlinear light transmittance and different composition media with the same structure. For a 532nm laser limiter structure, medium a was chosen to be C (diamond), with a refractive index of 2.425 and an extinction coefficient of 0. Medium B is selected as SrF2(strontium fluoride) having a refractive index of 1.4887 and an extinction coefficient of 0.00784. Defect layer C is selected from CS3-68 glass having a linear refractive index of 1.5 and a nonlinear refractive index of 2.3 × 10-10cm2W, extinction coefficient of 0.00011, thicknesses of dielectric layers A, B and C of 184.1nm, 92.0nm and 138.1nm, respectively, when incident light power density is less than 1 × 107W/m2When the optical transmittance is 86.4%, the incident light power density is more than 6 × 1010W/m2In this case, the optical transmittance was 0.02%. For a 1064nm laser limiter structure, medium a was chosen to be C (diamond), with a refractive index of 2.3902 and an extinction coefficient of 0. Medium B is selected to be CeF3(cerium fluoride) having a refractive index of 1.62 and an extinction coefficient of 0.00188. the defect layer C is selected from CdTe (cadmium telluride) having a linear refractive index of 2.746 and a non-linear refractive index of-1 × 10-12cm2A extinction coefficient of 0000153, the thicknesses of dielectric layers A, B and C are 149.3nm, 74.7nm and 112.0nm respectively when the incident light power density is more than 3 × 1014W/m2When the optical transmittance of the photonic crystal amplitude limiting structure is 0.3 percent, the power density of incident light is less than 1 × 1010W/m2When the refractive index is high, the optical transmittance is 79.8%.
When the wavelength of incident light is 532nm or 1064nm, the wavelength is just positioned at the position of a defect state under low incident light power density, and the transmittance is high; when the incident light power density is increased, the position of the defect state moves, the transmittance at the position of 532nm or 1064nm is reduced, and the light amplitude limiting effect under the high incident light power density is achieved.
For the photonic crystal laser amplitude limiting structure, a finite element analysis method is adopted, COMSOL Multiphysics is combined for simulation, an electromagnetic wave frequency domain physical field in a radio frequency module is added to obtain the optical mode field distribution of the photonic crystal laser amplitude limiting structure, and the change relation of the transmittance of the photonic crystal along with the incident light power density is obtained by changing the incident light power density. As shown in fig. 3 to 6, the defect-state mode field distribution of the inventive structure can be seen. In the propagation mode of the defect state of the photonic crystal, the energy of the light wave is concentrated at the position of the defect state, and the nonlinear effect is obvious. Fig. 7 and 8 are graphs of transmittance versus wavelength for the inventive structures.
As shown in FIGS. 9 and 10, the non-linear characteristic of the present invention can be seen, for the 532nm laser limiter structure, the incident light power density is selected to be 1.8 × 106W/m2、1.3×109W/m2And 1 × 1010W/m2It can be seen that, as the incident light power density increases, the defect position moves greatly, the transmittance corresponding to the wavelength of 532nm decreases from 86.4% to 0.02%, and the nonlinear amplitude limiting effect is achieved10W/m2、7×1011W/m2And 4.5 × 1012W/m2The transmittance-wavelength relationship is plotted. It can be seen that as the incident light power density increases, the defect states are located in the same wayThe transmittance corresponding to the wavelength of 1064nm is reduced from 79.8% to 0.3%, and the nonlinear amplitude limiting effect is realized.
As shown in FIGS. 11 and 12, by varying the incident light power density, a graph of transmittance versus incident light power density was obtained, and it can be seen that when the incident light wavelength was 532nm and the incident light power density was less than 1 × 107W/m2When the incident light power density is more than 6 × 1010W/m2When the wavelength of incident light is 1064nm and the power density of the incident light is less than 1 × 1010W/m2When the incident light power density is more than 3 × 1014W/m2When the transmittance is less than 0.3%.
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.
Claims (5)
1. A nonlinear laser amplitude limiting structure based on a one-dimensional photonic crystal is characterized in that: the nonlinear laser amplitude limiting structure is composed of photonic crystals arranged in a certain sequence by three media, wherein the three media are respectively A, B and C, and the photonic crystals have the structure of (AB)6CAC(AB)6Wherein, the three mediums A, B and C in the photonic crystal structure suitable for 532nm laser amplitude limiting are respectively diamond and SrF2And CS3-68 glass, the thicknesses of the dielectric layers A, B and C are 184.1nm, 92.0nm and 138.1nm respectively; three media A, B and C in the photonic crystal structure suitable for 1064nm laser amplitude limiting are respectively diamond and CeF3And CdTe, dielectric layers A, B and C have thicknesses of 149.3nm, 74.7nm and 112.0nm, respectively.
2. The one-dimensional photonic crystal-based photonic crystal of claim 1The linear laser amplitude limiting structure is characterized in that the photonic crystal suitable for 532nm laser amplitude limiting has the optical power density of less than 1 × 107W/m2When the optical transmittance of the photonic crystal amplitude limiting structure is 86.4 percent, the optical power density is more than 6 × 1010W/m2When the refractive index is too high, the optical transmittance is 0.02%.
3. The structure of claim 2, wherein the photonic crystal has a refractive index of 2.425 for medium A, an extinction coefficient of 0, a refractive index of 1.4887 for medium B, an extinction coefficient of 0.00784, and a defect layer as medium layer C, and has a linear refractive index of 1.5 and a nonlinear refractive index of 2.3 × 10 of 2.3, and is suitable for 532nm laser clipping-10cm2and/W, the extinction coefficient is 0.00011.
4. The nonlinear laser amplitude limiting structure based on the one-dimensional photonic crystal as claimed in claim 1, wherein the photonic crystal suitable for 1064nm laser amplitude limiting has an optical power density of more than 3 × 1014W/m2When the optical transmittance of the photonic crystal amplitude limiting structure is 0.3 percent, the optical power density is less than 1 × 1010W/m2When the refractive index is high, the optical transmittance is 79.8%.
5. The structure of claim 4, wherein the refractive index of medium A is 2.3902, the extinction coefficient is 0, the refractive index of medium B is 1.62, the extinction coefficient is 0.00188, the medium layer C is a defect layer, the linear refractive index is 2.746, and the nonlinear refractive index is-1 × 10 in the photonic crystal suitable for 1064nm laser amplitude limiting-12cm2and/W, extinction coefficient 0.000153.
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