CN111258147B - One-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect - Google Patents

One-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect Download PDF

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CN111258147B
CN111258147B CN202010112384.1A CN202010112384A CN111258147B CN 111258147 B CN111258147 B CN 111258147B CN 202010112384 A CN202010112384 A CN 202010112384A CN 111258147 B CN111258147 B CN 111258147B
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photonic crystal
amplitude limiting
limiting structure
topological
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CN111258147A (en
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路元刚
黄剑
周朗
徐锋
左敦稳
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Nanjing University of Aeronautics and Astronautics
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3511—Self-focusing or self-trapping of light; Light-induced birefringence; Induced optical Kerr-effect
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G02B1/005—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials made of photonic crystals or photonic band gap materials
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/3501—Constructional details or arrangements of non-linear optical devices, e.g. shape of non-linear crystals

Abstract

The invention provides a photonic crystal amplitude limiting structure based on a topological interface state and an optical Kerr effect, and the amplitude limiting structure is formed by periodically arranging four media into a photonic crystal according to a certain sequence. Assuming that the four media are A, B, C and D, the photonic crystal structure containing N periods is (A)0.5BA0.5)N(C0.5DC0.5)NWherein media A and B are nonlinear optical materials, and constitute the left part of the photonic crystal (PC_L) Media C and D are linear optical materials, and form the right part of the photonic crystal (PC_R) The subscript 0.5 represents one-half of the media base unit. The topological properties of the left part of the photonic crystal are different from those of the left part of the photonic right crystal. The high-attenuation-rate laser limiter can realize high transmittance of weak light and high attenuation rate of strong light aiming at 1064.15nm laser, and the structure can also be suitable for laser amplitude limiting of other wavelengths by selecting appropriate materials and adjusting thickness parameters.

Description

One-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect
Technical Field
The invention relates to the field of topological state, photonic crystal and nonlinear optics, in particular to a one-dimensional photonic crystal amplitude limiting structure based on topological interface state and optical Kerr effect, which can be applied to nonlinear laser amplitude limiting occasions requiring high transmittance of weak light and high attenuation of strong light.
Background
Since laser has excellent properties in various aspects of brightness, monochromaticity, directivity and monochromaticity, laser is widely used in the fields of industry, medical treatment, military and the like. However, the high-intensity laser can cause irreversible damage to human eyes and various optical detectors, for example, a Q-switched laser can easily reach MW/cm2High power density of the order of magnitude, so that clipping of the intense laser light is required. The laser with relatively weak power can be used as signal detection light without amplitude limiting, so thatThe laser protection structure has the nonlinear characteristic and is significant. The current laser protection method is mainly based on linear optics, nonlinear optics and thermally induced phase change principles. The amplitude limiting method based on the linear optical effect only has an effect on a certain waveband, the laser cannot be dynamically regulated according to the intensity of the laser, and the requirements of high transmission of weak light and high attenuation of strong light cannot be met simultaneously. The amplitude limiting method based on the nonlinear optical principle fundamentally overcomes the defects, and the nonlinear optical effect mainly comprises nonlinear absorption, nonlinear refraction, nonlinear reflection and nonlinear scattering. The reverse saturable absorption is a protection means commonly used in the field of nonlinear absorption light amplitude limiting, but the application of the reverse saturable absorption in laser amplitude limiting is limited due to the fact that the absorption coefficient of a material is generally small. Whereas clipping structures based on non-linear reflections have some limitations on the range of incident angles. Nonlinear scattering mostly occurs in liquid media, but since liquid is relatively sensitive to changes of external environment, the amplitude limiting effect is greatly influenced. In addition, there are many methods for clipping using the principle of thermally induced phase change, typical of phase change materials such as VO2However, the thin film cannot meet the requirement of real-time response to the pulse laser because of the long phase change time.
The existing YAG laser protective mirror design based on one-dimensional photonic crystal band gap reflection belongs to the linear laser amplitude limiting range, and the method can not dynamically control the laser intensity according to the laser intensity. In the existing several methods based on photonic crystal amplitude limiting, a one-dimensional photonic crystal structure with defect state amplitude limiting is utilized, the transmittance peak of the one-dimensional photonic crystal structure can generate frequency shift, and the amplitude limiting effect is not stable enough; the tunable filter realized by the mesoscopic calendaring effect of the photonic crystal medium layer has the problem of low sensitivity; the method for realizing the tunable function of the filter by adjusting the angle of the incident light has high requirement on the control precision of the azimuth angle. Furthermore, the actual linear transmittance of these several methods is highly susceptible to impurity and defect scattering during actual production and application. Li et al have studied a one-dimensional nonlinear photonic crystal based on optical nonlinear topological phase inversion, and the design is based on topological phase change to realize unidirectional transmission of light in the photonic crystal, and the initial structure thereof is a left and right structureThe topological properties of the side photonic crystals are the same, and when light with the wavelength of 1540nm enters from the normal direction, the transmittance is 75 percent; and a transmittance of 1.6% at the time of incidence from the reverse direction. The function of the optical fiber is similar to that of a diode, and high transmittance under weak light and high attenuation rate under strong light cannot be realized. Shenjialing et al studied the nonlinear laser amplitude-limiting method based on the double-defect one-dimensional photonic crystal, and the structure of the amplitude-limiting scheme is (AB)6CAC(AB)6A and B are linear media, the refractive index does not change with the light intensity, and C is a defect layer, and the defect layer is a dielectric material with a nonlinear refractive index. The principle of amplitude limiting is that the refractive index of a defect layer nonlinear medium changes in the process of increasing the light intensity, when the refractive index of the nonlinear medium increases/decreases, the position of a defect mode moves to low frequency/high frequency to realize amplitude limiting, and the principle of nonlinear amplitude limiting does not relate to the topological property of the photonic crystal.
In order to overcome the defects in the prior art, the invention designs a one-dimensional photonic crystal amplitude limiting structure based on a topological interface state and an optical Kerr effect. Topological interface states are a new way to control photon transmission, which can protect photon transmission from impurities and defect scattering. Therefore, the generation and disappearance of topological interface states are controlled by controlling the energy band structure of the photonic crystal, so that the high transmission of weak light and the high attenuation of strong light are realized.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a one-dimensional photonic crystal amplitude limiting structure based on a topological interface state and an optical Kerr effect, which can realize high transmittance under weak light and high attenuation rate under strong light, and can be applied to laser amplitude limiting of different wavelengths by selecting appropriate materials and adjusting thickness parameters.
In order to achieve the purpose, the technical scheme provided by the invention is as follows:
a one-dimensional photonic crystal amplitude limiting structure based on topological interface states and optical Kerr effect is characterized in that the one-dimensional photonic crystal amplitude limiting structure is composed of photonic crystals with four media periodically arranged according to a certain sequence, and the photonic crystal structure is (A) if the four media are A, B, C and D respectively0.5BA0.5)N(C0.5DC0.5)NThe media A and B are nonlinear optical materials and form the left part of the photonic crystal, the media C and D are linear optical materials and form the right part of the photonic crystal, the subscript 0.5 represents half of a basic unit of the media, N represents the period number of the photonic crystal structure, and the range of N is 1-200; the topological properties of the left part of the photonic crystal are different from those of the left part of the photonic right crystal; the four media A, B, C and D are respectively barium titanate doped with nano copper and nano iron, an indium tin oxide film covered with graphene, polymethyl methacrylate and zinc sulfide, and the thicknesses of the four media A, B, C and D are 129nm, 138nm, 137nm and 136nm respectively.
The photonic crystals (PC _ L and PC _ R) on the left side and the right side are different in topological properties, and a topological interface state is formed at the interface of the photonic crystals. The weak incident laser can pass through smoothly in the mode, and high transmission under weak light is realized; with the increase of the incident light power density, because the left side photonic crystal is made of two nonlinear optical materials, due to the optical Kerr effect, the refractive index of the left side photonic crystal changes, and the band gap of the left side photonic crystal becomes narrower gradually corresponding to the change of the energy band structure on the microstructure, so that the transmittance is reduced along with the change of the energy band structure, and the purpose of amplitude limiting is achieved; when the incident light power density continues to increase, the energy band of the nonlinear photonic crystal on the left side is turned over, the topological property is changed, the linear photonic crystal on the right side is not influenced by the change of the incident light power density, the topological property is unchanged, the topological properties of the photonic crystals on the left side and the right side are the same, the condition of existence of a topological interface state is not met, the photonic crystals recover to the original forbidden band state, the passing of photons is blocked, and therefore high attenuation under strong light is achieved.
In order to optimize the above technical solution, the specific measures taken further include:
in the above one-dimensional photonic crystal amplitude limiting structure suitable for 1064.15nm incident laser wavelength, the photonic crystal structure includes 5 periods, the topological property of the left part of the photonic crystal is positive, and the topological property of the right part of the photonic crystal is negative.
The one-dimensional photonic crystal amplitude limiting structure suitable for 1064.15nm incident laser wavelength has the optical power density of less than 2.34 multiplied by 10-5MW/cm2When the optical transmittance of the photonic crystal amplitude limiting structure is 81.95 percent, the optical power density is more than 17.63MW/cm2When the refractive index is too high, the optical transmittance is 0.91%.
The linear refractive index of the nano-copper and nano-iron doped barium titanate is 2.40, and the nonlinear coefficient is 2.1 multiplied by 10-8cm2W, absorption coefficient of 2.2X 10-3cm-1The laser damage threshold is 0.54GW/cm2(ii) a The linear refractive index of the indium tin oxide film covering the graphene is 1.50, and the nonlinear coefficient is-2.0 multiplied by 10-8cm2W, absorption coefficient of 2.0X 10-3cm-1The laser damage threshold is 0.43GW/cm2(ii) a The refractive index of the polymethyl methacrylate is 1.48, and the absorption coefficient is 0.15cm-1The laser damage threshold is 2.63GW/cm2(ii) a The refractive index of the zinc sulfide is 2.29, and the absorption coefficient is 0.07cm-1The laser damage threshold is 0.34GW/cm2。
The invention has the beneficial effects that:
the high transmission under the weak light of the designed structure of the invention is based on the topological interface state, so the amplitude limiting effect is not influenced by the impurities and defect scattering introduced in the manufacturing process. Compared with the amplitude limiting method utilizing the defect mode frequency shift, the design has the advantages that the position of the transmittance peak is stable, the influence of incident light power density is avoided, and the design can be better applied to laser goggles, optical sensors and compact and efficient integrated optical amplitude limiters. The structure can realize high transmittance under weak light and high attenuation rate under strong light, and can be applied to laser amplitude limiting of different wavelengths by selecting appropriate materials and adjusting thickness parameters.
Drawings
Fig. 1 is a cross-sectional view of a photonic crystal amplitude limiting structure of the present invention.
FIG. 2 is a diagram showing the relationship between the band structure and the topological interface state of the photonic crystal on the left and right sides of the amplitude limiting structure of the present invention, and the power density of incident light.
Fig. 3 is a graph of the band gap width of the left nonlinear photonic crystal (PC _ L) of the inventive clipping structure as a function of incident optical power.
Fig. 4 is a transmittance spectrum of photonic crystals (PC _ L and PC _ R) on the left and right sides of the limiter structure of the present invention.
Fig. 5 is an overall transmittance spectrum of the inventive clipping structure.
Fig. 6 is a diagram of the electric field distribution of the inventive clipping structure under weak/strong light.
Fig. 7 is a graph of the transmittance spectrum variation of the inventive clipping structure with increasing incident light power density.
FIG. 8 is a graph showing the transmittance of a lower-amplitude structure with an incident light wavelength of 1064.15nm as a function of incident light power density.
FIG. 9 is a graph showing the relationship between the incident power density and the emergent power density of the limiter structure of the present invention,
Detailed Description
The invention is further illustrated by the following figures and examples.
As shown in fig. 1, an embodiment of the present invention provides a one-dimensional photonic crystal amplitude limiting structure based on a topological interface state and an optical kerr effect, where the one-dimensional photonic crystal amplitude limiting structure is formed by photonic crystals in which four media are periodically arranged in a certain order, and if the four media are A, B, C and D respectively, the photonic crystal structure is (a)0.5BA0.5)N(C0.5DC0.5)NThe media A and B are nonlinear optical materials and form the left part (PC _ L) of the photonic crystal, the media C and D are linear optical materials and form the right part (PC _ R) of the photonic crystal, the subscript 0.5 represents half of a basic unit of the media, N represents the period number of the photonic crystal structure, and the range of N is 1-200; the topological properties of the left part of the photonic crystal are different from those of the left part of the photonic right crystal.
Taking the incident laser wavelength of 1064.15nm as an example, the photonic crystal structure comprises 5 periods and has the structure of (A)0.5BA0.5)5(C0.5DC0.5)5The topological property of the left part (PC _ L) of the photonic crystal is positive, photonThe topological properties of the right part of the crystal (PC _ R) are negative. Medium A is barium titanate doped with nano copper and nano iron, and its thickness dA129nm, linear refractive index of 2.40, and non-linear coefficient of 2.1 × 10-8cm2W, absorption coefficient of 2.2X 10-3cm-1The laser damage threshold is 0.54GW/cm2. Medium B is ITO film coated with graphene and has thickness dB138nm, linear refractive index of 1.50, and nonlinear coefficient of-2.0X 10-8cm2W, absorption coefficient of 2.0X 10-3cm-1The laser damage threshold is 0.43GW/cm2. The medium C is polymethyl methacrylate (PMMA) with a thickness dC137nm, refractive index of 1.48, and absorption coefficient of 0.15cm-1The laser damage threshold is 2.63GW/cm2. Medium D is zinc sulfide with a thickness DDHas a refractive index of 2.29 and an absorption coefficient of 0.07cm at 136nm-1The laser damage threshold is 0.34GW/cm2. When the optical power density is less than 2.34 × 10-5MW/cm2When the optical transmittance of the photonic crystal amplitude limiting structure is 81.95 percent, the optical power density is more than 17.63MW/cm2When the refractive index is too high, the optical transmittance is 0.91%.
As shown in fig. 2, when the incident light power density is low, the topological property of the left photonic crystal (PC _ L) is positive, and the topological property of the right photonic crystal (PC _ R) is negative, so as to satisfy the condition that the topological interface state exists, and it can be seen that there is a transmittance peak at the position corresponding to the band gap center wavelength due to the existence of the topological interface state (TES). When the incident light power density is increased, because the left side photonic crystal is composed of two nonlinear optical materials, the refractive index of the left side photonic crystal is changed due to the optical Kerr effect, the band gap of the left side photonic crystal is gradually narrowed corresponding to the change of the energy band structure on the microstructure, the transmittance is also reduced in the process, and the purpose of amplitude limiting is achieved. When the incident light power density continues to increase, the energy band of the nonlinear photonic crystal on the left side is turned over, the topological property is changed from original positive to negative, the linear photonic crystal on the right side is not influenced by the change of the incident light power density, the topological property is still negative, the existence condition of a topological interface state is not met, and the photonic crystal is restored to the original forbidden band state to block the passing of photons.
In this example, FIG. 3 shows that the band gap width of the nonlinear photonic crystal (PC _ L) on the left is represented by f in the process of increasing the incident light power density0Gradually narrows to 0, corresponding to the positive topological property of the left photonic crystal. With the increase of the incident light power density, the energy band of the left-side photonic crystal is turned over, the band gap width is gradually increased from 0, and the topological property of the left-side photonic crystal is negative at the moment.
For the photonic crystal laser amplitude limiting structure, a finite element analysis method is adopted, COMSOL Multiphysics is combined with finite element analysis software for simulation, an electromagnetic wave frequency domain physical field in a radio frequency module is added, and the relation that the transmittance of the photonic crystal changes along with the incident light power density is obtained by changing the incident light power density. As shown in fig. 4 and 5, the photonic crystal on the left side (PC _ L) and the photonic crystal on the right side (PC _ R) are both forbidden bands near 1064.15nm, but due to the existence of the topological interface state (TES), a transmission peak appears at 1064.15nm in the whole structure, and high transmittance can be ensured under weak light. The nonlinear optical characteristics of the structure can be seen from fig. 6-9, and the amplitude limiting effect of the structure on 1064.15nm laser can be seen by calculating the electric field distribution of the amplitude limiting structure in the low/high states of the incident light power respectively, as shown in fig. 6. As can be seen from fig. 7 and 8, the incident light power density is from 2.34 × 10-5MW/cm2Increased to 17.63MW/cm2The corresponding transmittance is reduced from 81.95% to 0.91%, and the position of the transmission peak is maintained at 1064.15nm, achieving nonlinear clipping. FIG. 9 shows the relationship between the incident light power density and the initial light power density, and it can be seen that the emergent light power density increases linearly when the initial incident light power is smaller, and when the incident light power density increases to 0.3MW/cm2Then, the emergent light power density is stabilized at 0.14MW/cm2。
The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above-mentioned embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention.

Claims (5)

1. A one-dimensional photonic crystal amplitude limiting structure based on topological interface states and optical Kerr effect is characterized in that: the one-dimensional photonic crystal amplitude limiting structure is formed by photonic crystals with four mediums periodically arranged, and the photonic crystal structure is (A) if the four mediums are A, B, C and D respectively0.5BA0.5)N(C0.5DC0.5)NThe media A and B are nonlinear optical materials and form the left part of the photonic crystal, the media C and D are linear optical materials and form the right part of the photonic crystal, the subscript 0.5 represents half of a basic unit of the media, N represents the period number of the photonic crystal structure, and the range of N is 1-200; the topological properties of the left part of the photonic crystal and the right part of the photonic crystal are different.
2. The one-dimensional photonic crystal amplitude limiting structure based on topological interface states and optical kerr effect according to claim 1, wherein: the four media A, B, C and D are respectively barium titanate doped with nano copper and nano iron, an indium tin oxide film covered with graphene, polymethyl methacrylate and zinc sulfide, and the thicknesses of the four media A, B, C and D are respectively 129nm, 138nm, 137nm and 136 nm.
3. The one-dimensional photonic crystal amplitude limiting structure based on topological interface states and optical kerr effect according to claim 1, wherein: the photonic crystal amplitude limiting structure is suitable for a one-dimensional photonic crystal amplitude limiting structure with the incident laser wavelength of 1064.15nm, the photonic crystal structure comprises 5 periods, the topological property of the left part of the photonic crystal is positive, and the topological property of the right part of the photonic crystal is negative.
4. A method according to claim 1 based on topological interface states and optical kerr effectThe one-dimensional photonic crystal amplitude limiting structure is characterized in that: the one-dimensional photonic crystal amplitude limiting structure suitable for the incident laser wavelength of 1064.15nm has the optical power density of less than 2.34 multiplied by 10-5MW/cm2When the optical transmittance of the photonic crystal amplitude limiting structure is 81.95 percent, the optical power density is more than 17.63MW/cm2When the refractive index is too high, the optical transmittance is 0.91%.
5. The one-dimensional photonic crystal amplitude limiting structure based on topological interface states and optical kerr effect according to claim 2, wherein: the linear refractive index of the nano-copper and nano-iron doped barium titanate is 2.40, and the nonlinear coefficient is 2.1 multiplied by 10-8cm2W, absorption coefficient of 2.2X 10-3cm-1The laser damage threshold is 0.54GW/cm2(ii) a The linear refractive index of the indium tin oxide film covering the graphene is 1.50, and the nonlinear coefficient is-2.0 multiplied by 10-8cm2W, absorption coefficient of 2.0X 10- 3cm-1The laser damage threshold is 0.43GW/cm2(ii) a The refractive index of the polymethyl methacrylate is 1.48, and the absorption coefficient is 0.15cm-1The laser damage threshold is 2.63GW/cm2(ii) a The refractive index of the zinc sulfide is 2.29, and the absorption coefficient is 0.07cm-1The laser damage threshold is 0.34GW/cm2。
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