CN110515224A - A kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation - Google Patents
A kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation Download PDFInfo
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements with at least one potential jump barrier, e.g. PN, PIN junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0013—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
- H01Q15/002—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
- H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
Abstract
A kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation, is related to electromagnetism and electromagnetic wave technology field.The invention aims to solve existing tunable Terahertz EIT Meta Materials slower rays device list working band, tunable range is narrow, structure and preparation process are complicated, external equipment is cumbersome, has a single function, the problem that reliability is low, the optional narrow range of active material and linear properties are small needed for energisation mode.Silicon dioxide insulating layer is provided in silicon substrate layer, the graphical two graphene ribbons structure of periodic arrangement is provided on silicon dioxide insulating layer, the patterned metal slot structure of periodic arrangement is provided in graphene ribbon structure, two graphene-structureds are connect with the first metal electrode Pad 1 and the second metal electrode Pad 2 respectively.The present invention can get a kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation.
Description
Technical field
The present invention relates to Electromagnetic Fields & Magnetic Waves technical fields, and in particular to a kind of graphene-metallic channel Meta Materials are too
Hertz slower rays device.
Background technique
Electromagnetically induced transparent (Electromagnetically Induced Transparency, EIT) is a kind of utilization
Quantum coherence effect eliminates a kind of technology of medium influence during Electromagnetic Wave Propagation.It refers to the electricity by the way that a beam intensity is added
In the case where magnetic radiation (referred to as coupling light), the dim light for keeping the coupling frequency between two energy levels of a branch of frequency and atom close, In
The technology that the absorbing phenomenon that should be generated when passing through medium disappears.Initial EIT phenomenon is found in three-lever system, wherein | 1
> be ground state, | 2 > and | 3 > are excitation state, and when detection light a branch of to medium emission, atom will be from ground state | 1 > be energized into it is sharp
Send out state | 3 >, transition occurs.Since light is absorbed, the intensity for receiving detection light will weaken significantly even to disappear.It is a branch of when being added
With excitation state | 2 > and | 3 > frequency it is similar when coupling light, make that strong coupling occurs between two energy levels, so that making to excite
State | 3 > energy level cleave, form energy state, referred to as dressed state similar in two energy.At this point, having when detection light incidence identical
Probability to the two dressed states carry out transition, in transition, quantum destructive interference can occur for two transition probability amplitudes, cause altogether
The absorption of the detection light detected at vibration frequency reduces, or even disappears.At this point, detection light can be propagated by medium, as
Electromagnetically induced Transparency Phenomenon.
However, the EIT phenomenon of atomic system is limited by stable laser and low-temperature working condition, lead to chip level
EIT phenomenon be difficult to realize.Currently, the class EIT phenomenon found in classical system receives very big concern, such as coupled resonance
Device and plasmon structures etc..The class EIT resonance due to caused by Fano Linear is destructive is interfered, and cancellation between realization quantum is not needed
Interfere applied experiment condition, provides a kind of implementation for the practical application of EIT phenomenon, be based especially on Meta Materials
Plasma class EIT phenomenon causes concern, new device can be developed using this phenomenon, such as slower rays device and highly sensitive sensing
Device etc..Compared to EIT phenomenon traditional between atom, the class EIT phenomenon in Meta Materials can be realized by different mechanism, and be made
It is more easier to regulate and control, such as: optical dipole sub-antenna, closure ring resonator and split-ring resonator.Since EIT phenomenon has
Slow light effect can realize slower rays device by the slow light effect of class EIT phenomenon in Meta Materials, to enhance the reality of EIT phenomenon
Border application.However, when metamaterial structure unit geometric parameter once it is determined that, performance will be not available for tune and change,
Strongly limit its application range.Therefore, tunable EIT Meta Materials research has attracted more and more concerns, probes into efficiently
Convenient and fast tuning manner becomes focus of attention, it is made to have broader answer with fields such as nonlinear opticses in sensing, absorption
Use prospect.
Currently, a variety of tunable EIT Meta Materials have been found and report, people's extensive concern and interest are caused.For example,
2011, Jingbo Wu and Biaobing Jin of Nanjing University et al. proposed that the plane of two based superconductors is tunable too
Hertz EIT Meta Materials；2016, Quan Xu of University Of Tianjin et al. designed a kind of Terahertz EIT based on tunable semiconductor
Meta Materials；2016, the Prakash Pitchappa of National University of Singapore propose it is a kind of based on MEMS tuning electromagnetism lure
Lead transparent metamaterial；2017, it is super that Hang Su of Harbin Institute of Technology et al. proposes a kind of EIT based on liquid crystal tunable
Surface switches.However, temperature range required for being tuned due to superconductor is lower, tunable semiconductor needs additional stable pumping
Light, the complex process of MEMS technology, reliability is low, and liquid crystal material tuning is inflexible, it is difficult to obtain complete polarized light；In addition,
Current tunable EIT Meta Materials are mostly single working bands.These defects bring very big difficulty to the practical application of EIT Meta Materials
Degree, limits its application range.
Summary of the invention
It, can the invention aims to solve existing tunable Terahertz EIT Meta Materials slower rays device list working band
Tuning range is narrow, structure and preparation process are complicated, external equipment is cumbersome, have a single function, reliability is low, active needed for energisation mode
The optional narrow range of material and the small problem of linear properties, and a kind of graphene-gold of biobelt flexible choice regulation is provided
Belong to slot Meta Materials Terahertz slower rays device.
A kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation, including terahertz
Hereby slower rays device function structure, silicon dioxide insulating layer, silicon substrate and gate electrode structure；The Terahertz slower rays device function
Structure is made of the metamaterial structure unit of periodic arrangement, and the metamaterial structure unit is by patterned metal slot structure and figure
Patterned metal slot structure is arranged in graphical two graphene ribbons structure for two graphene ribbon structure composition of shapeization；The gate electrode
Structure is made of the first metal electrode Pad1 and the second metal electrode Pad2, is provided with silicon dioxide insulator on the silicon substrate
Layer, it is provided with graphical two graphene ribbons structure on silicon dioxide insulating layer, the graphical two graphene ribbons structure is the period
Property arrangement；First metal electrode Pad1 and the second metal electrode Pad2 is separately positioned on the Terahertz slower rays device upper surface
Two sides, the graphical two graphene ribbons structure of periodic arrangement respectively with the first metal electrode Pad1 and the second metal electrode Pad2
Connection；
Left side graphene in the first metal electrode Pad1 to the second direction metal electrode Pad2, Terahertz slower rays device
Strip is to be interconnected by the first graphene ribbon structure, and connect to form first electrode with the first metal electrode Pad1；Along second
Metal electrode Pad2 is to the first direction metal electrode Pad1, and corresponding right side graphene strip is by Terahertz slower rays device
Two graphene ribbon structures interconnect, and connect to form second electrode with the second metal electrode Pad2；Wherein connection left side graphite
The metal wire of alkene strip and the metal wire of connection right side graphene strip are not attached to, first electrode and second electrode difference；
The patterned metal slot structure is made of two pairs of horizontally disposed metallic channels and a metallic channel being vertically arranged,
The two sides for the metallic channel being vertically arranged are arranged in two pairs of horizontally disposed metallic channels, along the metamaterial structural unit central
Line, two pairs of horizontally disposed metallic channel horizontal directions are symmetrical, and vertical direction is asymmetric；The metallic channel being vertically arranged has one
Run through the vertical gap of metamaterial structure unit along groove center line；The first graphene ribbon structure and the second graphene ribbon structure
Size be length it is identical and of different size, be vertically disposed on two pairs of horizontally disposed metallic channels in the following, along the super material
Expect the center line of structural unit, vertically disposed graphical two graphene ribbons structure level direction is symmetrical, and vertical direction is asymmetric；
There is a vertical gap between the metal metamaterial structure adjacent cells.
A kind of graphene-metallic channel Meta Materials Terahertz slower rays device preparation side of biobelt flexible choice regulation
Method is completed according to the following steps:
One, liner oxidation: silicon dioxide insulating layer is grown on low-doped HR-Si substrate using oxidation technology, is obtained
Growth has the silicon substrate of silicon dioxide insulating layer；
Two, CVD method prepares graphene: first copper foil substrate is pre-processed with ferric nitrate, then using methane as carbon source, and argon
Respectively as protection and reducing gas, copper foil substrate after the pre-treatment carries out heat treatment growth graphene for gas and hydrogen, obtains
Stand-by graphene；
Three, graphene substrate shifts: then spin coating polymethyl methacrylate (PMMA) on the surface of graphene has spin coating
The graphene of PMMA is placed in corrosion copper foil substrate in ferric chloride solution, the graphene after obtaining corrosion copper foil, then will corrode copper foil
Graphene afterwards is cleaned multiple times in deionized water, the graphene after being cleaned, and finally has silica exhausted with growth
The silicon substrate of edge layer fishes for graphene from deionized water, and removes the PMMA on graphene and secondary cleaning processing, completes
Graphene in copper substrate, which is transferred to growth, to be had on the silicon substrate of silicon dioxide insulating layer；
Four, graphene is graphical: using mechanical spin-coating method on being transferred to the silicon substrate that growth has silicon dioxide insulating layer
Graphene surface spin coating photoresist, then there is the graphene of photoresist to dry spin coating, be successively exposed, develop and
Fixing obtains the graphical photoresist exposure mask of preparation graphene ribbon structure, then using oxygen plasma to the graphite of photoresist exposure mask
Alkene performs etching, and finally removes photoresist using acetone soak and cleans, obtains patterned graphene band structure；
Five, metal patternization: mechanical spin-coating method spin coating is first used in the patterned graphene body structure surface that step 4 obtains
Photoresist is successively exposed, develops and is fixed, and obtains the graphical photoresist exposure mask for preparing patterned metal slot structure, so
Metal is deposited on the graphical photoresist exposure mask for preparing patterned metal slot structure using magnetron sputtering method afterwards, is finally placed in again
24 hours stripping metals and removal photoresist are impregnated in acetone soln, obtain patterned metal slot structure and gate electrode structure, it is complete
Graphene-metallic channel Meta Materials Terahertz slower rays device the preparation regulated and controled at a kind of biobelt flexible choice.
Beneficial effects of the present invention:
One, traditional Terahertz Meta Materials are based on patterned metal periodic arrangement, since conductivity metal is fixed
Constant, once fixed, corresponding resonance point is also fixed the structural parameters of metal structure unit with resonance manner, leads to its work
Working frequency is fixed with electromagnetic property, is unable to flexible modulation electromagnetic property；A kind of biobelt flexible choice regulation of the present invention
Graphene-metallic channel Meta Materials Terahertz slower rays device, by integrating graphene-structured in the structural unit of EIT Meta Materials,
It is realized saturating to Meta Materials electromagnetically induced using the electrostatically-doped Fermi's energy for adjusting graphene to tune the conductivity of graphene
The flexible control of bright window；
Two, it since current most of EIT Meta Materials work in one-segment, and cannot tune, significantly limit EIT
The application range of Meta Materials；A kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation of the present invention is slow
Optical device, metal metamaterial structure unit are made of two pairs of horizontally disposed metallic channels and a metallic channel being vertically arranged,
Two transparent windows are realized using dark-bright-dark electromagnetic field couples mode；And on this basis, by horizontally disposed at two pairs
Dark modal metallic slot structure below integrate graphene ribbon structure, it is electrostatically-doped adjust graphene Fermi can, can flexible modulation
The amplitude and working frequency of two transparent windows increase the function and application range of EIT Meta Materials.
Three, since traditional optical pumping excitation and thermal excitation mode can only carry out global regulation to overall structure, and cannot be real
Current situation portion selective regulation；A kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation of the present invention is slow
Optical device uses two gate electrode structures, and in the edge setting gap of metamaterial structure unit and center upright hollow out strip
Centre setting gap, it is therefore an objective to realize in structural unit and be electrically isolated between two pairs of horizontally disposed metal slot structures；Passability selection
Property between gate electrode and substrate on-load voltage, can to two graphene strips carry out selectivity it is electrically doped, adjust graphene
Fermi's energy carries out selective flexible modulation to two electromagnetically induced transparent window amplitudes of Meta Materials to realize, forms difference
Reconstituted state, can flexible modulation electromagnetically induced reflection windows amplitude and group delay, form a variety of working conditions, can both carry out
Single tape regulation, and can realize biobelt while regulate and control, it can also realize the asynchronous regulation of biobelt, expand working range, improve reality
The property used；
Four, a kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation of the present invention,
It is made of complementary type Meta Materials, by integrating graphene-structured in the structural unit of Meta Materials, electrically doped change graphene
Fermi's energy has the characteristics that low in cost, simple process, tuning are easy.The present invention is integrated in metal structure using graphene
Terahertz Meta Materials slower rays device is constructed, by Fermi's energy of electrostatically-doped tuning graphene strip, thus selectivity control stone
Near-field coupling characteristic in the conductivity and metamaterial structure unit of black alkene strip between each element, is selectively realized to slow
The amplitude at the transparent peak of the electromagnetically induced of optical device and group delay flexibly control.
The present invention can get a kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation
Part.
Detailed description of the invention
Fig. 1 is a kind of graphene-metallic channel Meta Materials Terahertz slower rays of the biobelt flexible choice of embodiment one regulation
The structural schematic diagram of device；
Fig. 2 is the top view of metamaterial structure unit；
Fig. 3 is the sectional view along two dotted line of figure；
Fig. 4 is that left side graphene strip Fermi can Ef1Become 0.7eV from 0.1eV, right side graphene strip Fermi can Ef2For
When 0.1eV, in the variation of the reflectivity curve of 0.7THz to 1.1THz frequency range.
Fig. 5 is that left side graphene strip Fermi can Ef1When for 0.1eV, the Fermi of right side graphene strip can Ef2From 0.1eV
When becoming 0.6eV, change in the reflectivity curve of 0.7THz to 1.1THz frequency range.
When Fig. 6 is that the Fermi of two sides graphene strip can become (0.6eV and 1eV) from (0.1eV and 0.08eV),
The variation of reflectivity curve；
When Fig. 7 is that the Fermi of two sides graphene strip can become (0.6eV and 1eV) from (0.1eV and 0.08eV)
Phase change；
When Fig. 8 is that the Fermi of two sides graphene strip can become (0.6eV and 1eV) from (0.1eV and 0.08eV)
Group delay variations.
Wherein, 1 is silicon substrate, and 2 be silicon dioxide insulating layer, and 3 be graphical two graphene ribbons structure, and 3-1 is the first stone
Black alkene band structure, 3-2 are the second graphene ribbon structure, and 4 be patterned metal slot structure, and 5 be the first metal electrode Pad1, and 6 are
Second metal electrode Pad2.
Specific embodiment
Specific embodiment 1: a kind of super material of graphene-metallic channel of biobelt flexible choice regulation of present embodiment
Expect Terahertz slower rays device, it is characterised in that it includes Terahertz slower rays device function structure, silicon dioxide insulating layer 2, silicon lining
Bottom 1 and gate electrode structure；The Terahertz slower rays device function structure is made of the metamaterial structure unit of periodic arrangement,
The metamaterial structure unit is made of patterned metal slot structure 4 and graphical two graphene ribbons structure 3, graphical two graphite
Patterned metal slot structure 4 is set on alkene band structure 3；The gate electrode structure is by the first metal electrode Pad1 5 and the second metal
Electrode Pad2 6 is formed, and is provided with silicon dioxide insulating layer 2 on the silicon substrate 1, is provided with figure on silicon dioxide insulating layer 2
Two graphene ribbon structure 3 of shapeization, the graphical two graphene ribbons structure 3 is periodic arrangement；First metal electrode Pad1 5
The two sides of the Terahertz slower rays device upper surface, the figure of periodic arrangement are separately positioned on the second metal electrode Pad2 6
Change two graphene ribbon structures 3 to connect with the first metal electrode Pad1 5 and the second metal electrode Pad2 6 respectively；
Left side stone in 6 direction 5 to the second metal electrode Pad2 of the first metal electrode Pad1, Terahertz slower rays device
Black alkene strip is to be interconnected by the first graphene ribbon structure 3-1, and the first electricity of formation is connect with the first metal electrode Pad1 5
Pole；The corresponding right side stone along 5 direction 6 to the first metal electrode Pad1 of the second metal electrode Pad2, Terahertz slower rays device
Black alkene strip is to be interconnected by the second graphene ribbon structure 3-2, and the second electricity of formation is connect with the second metal electrode Pad2 6
Pole；Wherein the metal wire of connection left side graphene strip and the metal wire of connection right side graphene strip are not attached to, first electrode
It is different with second electrode；
The metallic channel group that the patterned metal slot structure 4 is vertically arranged by two pairs of horizontally disposed metallic channels and one
At the two sides for the metallic channel being vertically arranged are arranged in two pairs of horizontally disposed metallic channels, along the metamaterial structure unit
Center line, two pairs of horizontally disposed metallic channel horizontal directions are symmetrical, and vertical direction is asymmetric；The metallic channel being vertically arranged has
One runs through the vertical gap of metamaterial structure unit along groove center line；The first graphene ribbon structure 3-1 and the second graphite
The size of alkene band structure 3-2 be length it is identical and of different size, be vertically disposed on two pairs of horizontally disposed metallic channels in the following,
Along the center line of the metamaterial structure unit, 3 horizontal directions of vertically disposed graphical two graphene ribbons structure are symmetrical, vertically
Direction is asymmetric；There is a vertical gap between the metal metamaterial structure adjacent cells.
Present embodiment the utility model has the advantages that
One, traditional Terahertz Meta Materials are based on patterned metal periodic arrangement, since conductivity metal is fixed
Constant, once fixed, corresponding resonance point is also fixed the structural parameters of metal structure unit with resonance manner, leads to its work
Working frequency is fixed with electromagnetic property, is unable to flexible modulation electromagnetic property；A kind of biobelt flexible choice tune of present embodiment
The graphene of control-metallic channel Meta Materials Terahertz slower rays device, by integrating graphene knot in the structural unit of EIT Meta Materials
Structure is realized to tune the conductivity of graphene to Meta Materials electromagnetically induced using the electrostatically-doped Fermi's energy for adjusting graphene
The flexible control of transparent window；
Two, it since current most of EIT Meta Materials work in one-segment, and cannot tune, significantly limit EIT
The application range of Meta Materials；A kind of graphene-metallic channel Meta Materials terahertz of biobelt flexible choice regulation of present embodiment
Hereby slower rays device, the metallic channel group that metal metamaterial structure unit is vertically arranged by two pairs of horizontally disposed metallic channels and one
At realizing two transparent windows using dark-bright-dark electromagnetic field couples mode；And on this basis, by being set in two pairs of levels
Graphene ribbon structure is integrated below the dark modal metallic slot structure set, the electrostatically-doped Fermi's energy for adjusting graphene can be adjusted flexibly
The amplitude and working frequency of two transparent windows are controlled, the function and application range of EIT Meta Materials is increased.
Three, since traditional optical pumping excitation and thermal excitation mode can only carry out global regulation to overall structure, and cannot be real
Current situation portion selective regulation；A kind of graphene-metallic channel Meta Materials terahertz of biobelt flexible choice regulation of present embodiment
Hereby slower rays device uses two gate electrode structures, and the edge setting gap of metamaterial structure unit and center upright hollow out are long
Gap is arranged in item center, it is therefore an objective to realize in structural unit and be electrically isolated between two pairs of horizontally disposed metal slot structures；Passability
The selectively on-load voltage between gate electrode and substrate can carry out selective electrically doped, adjusting graphite to two graphene strips
Fermi's energy of alkene carries out selective flexible modulation to two electromagnetically induced transparent window amplitudes of Meta Materials to realize, is formed
Different reconstituted states, can flexible modulation electromagnetically induced reflection windows amplitude and group delay, form a variety of working conditions, both may be used
Single tape regulation is carried out, and can realize biobelt while regulate and control, the asynchronous regulation of biobelt can also be realized, expand working range, is improved
Practicability；
Four, a kind of graphene-metallic channel Meta Materials Terahertz slower rays of biobelt flexible choice regulation of present embodiment
Device is made of complementary type Meta Materials, by integrating graphene-structured, electrically doped change graphite in the structural unit of Meta Materials
Fermi's energy of alkene has the characteristics that low in cost, simple process, tuning are easy.Present embodiment is integrated in gold using graphene
Belong to and construct Terahertz Meta Materials slower rays device in structure, by Fermi's energy of electrostatically-doped tuning graphene strip, to select
Property control graphene strip conductivity and metamaterial structure unit in near-field coupling characteristic between each element, selectively
Realization flexibly controls the amplitude at the transparent peak of the electromagnetically induced of slower rays device and group delay.
Specific embodiment 2: the differences between this implementation mode and the specific implementation mode are that: the material of the silicon substrate 1 is
The material of low-doped High Resistivity Si, the patterned metal slot structure 4 is Al, Cu or Au, with a thickness of 0.2 μm.
Other steps are same as the specific embodiment one.
Specific embodiment 3: present embodiment is with specific embodiment one or two differences: in first electrode Pad1
The on-load voltage V between second electrode Pad2 and silicon substrate 11And V2Can it is electrostatically-doped regulation graphene Fermi can, pass through control
Two electrode voltage sizes can flexibly tune Fermi's energy of two sides graphene strip, adjust the stiffness of coupling of each element；Pass through change
The stiffness of coupling of three interelements, can flexible modulation Terahertz slower rays device electromagnetically induced transparent window amplitude.
Other steps are the same as one or two specific embodiments.
Specific embodiment 4: one of present embodiment and specific embodiment one to three difference are: the Meta Materials
Structural unit is the direction x element length PxIt is 300 μm, the direction y element length PyIt is 160 μm, metamaterial structure unit two sides
2 μm of gap is set, and 2 μm of gap is arranged in the metamaterial structural unit central.
Other steps are identical as specific embodiment one to three.
Specific embodiment 5: one of present embodiment and specific embodiment one to four difference are: a kind of biobelt can
Graphene-metallic channel Meta Materials Terahertz slower rays device preparation method of flexible choice regulation, is completed according to the following steps:
One, liner oxidation: silicon dioxide insulating layer 2 is grown on low-doped HR-Si substrate 1 using oxidation technology, is obtained
There is the silicon substrate 1 of silicon dioxide insulating layer 2 to growth；
Two, CVD method prepares graphene: first copper foil substrate is pre-processed with ferric nitrate, then using methane as carbon source, and argon
Respectively as protection and reducing gas, copper foil substrate after the pre-treatment carries out heat treatment growth graphene for gas and hydrogen, obtains
Stand-by graphene；
Three, graphene substrate shifts: then spin coating is had the graphene of PMMA to be placed in chlorine by spin coating PMMA on the surface of graphene
Change and corrodes copper foil substrate in ferrous solution, the graphene after obtaining corrosion copper foil, then by the graphene after corrosion copper foil in deionization
It is cleaned multiple times in water, the graphene after being cleaned, finally has the silicon substrate 1 of silicon dioxide insulating layer 2 from going with growth
Graphene is fished in ionized water, and removes the PMMA on graphene and secondary cleaning processing, is completed the graphite in copper substrate
Alkene, which is transferred to growth, to be had on the silicon substrate 1 of silicon dioxide insulating layer 2；
Four, graphene is graphical: being transferred to the silicon substrate 1 for growing and having silicon dioxide insulating layer 2 using mechanical spin-coating method
On graphene surface spin coating photoresist, then there is the graphene of photoresist to dry spin coating, be successively exposed, develop
And fixing, obtain the photoresist exposure mask of preparation graphene ribbon structure, then using oxygen plasma to the graphene of photoresist exposure mask into
Row etching finally removes photoresist using acetone soak and cleans, obtains patterned graphene band structure；
Five, metal patternization: mechanical spin-coating method spin coating is first used in the patterned graphene body structure surface that step 4 obtains
Photoresist is successively exposed, develops and is fixed, and obtains the graphical photoresist exposure mask for preparing patterned metal slot structure 4, so
Metal is deposited on the graphical photoresist exposure mask for preparing patterned metal slot structure 4 using magnetron sputtering method afterwards, is finally set again
24 hours stripping metals and removal photoresist are impregnated in acetone soln, obtain patterned metal slot structure 4 and gate electrode structure,
Complete a kind of graphene-metallic channel Meta Materials Terahertz slower rays device preparation of biobelt flexible choice regulation.
Other steps are identical as specific embodiment one to four.
Specific embodiment 6: one of present embodiment and specific embodiment one to five difference are: institute in step 1
The oxidation technology stated is dry oxidation technique, and the dry oxidation technique is that at high temperature, silicon and oxygen reaction generate titanium dioxide
Silicon.
Other steps are identical as specific embodiment one to five.
Specific embodiment 7: one of present embodiment and specific embodiment one to six difference are: described in step 2
Heat treatment be by pretreated copper foil silicon to 1050 DEG C, then to cool the temperature to 1000 DEG C, be further continued for being cooled to
Room temperature.
Other steps are identical as specific embodiment one to six.
Specific embodiment 8: one of present embodiment and specific embodiment one to seven difference are: institute in step 3
The cleaning stated is the graphene after corrosion copper foil to be placed in deionized water, the graphene after being cleaned multiple times, after being cleaned；
The transfer of substrate described in step 3 and secondary cleaning processing are, after fishing for cleaning from the bottom of deionized water with the silicon wafer of oxidation
Graphene, the graphene after finally fishing for cleaning, which is placed in acetone, impregnates removal PMMA, and be cleaned multiple times with deionized water,
It completes and the graphene in copper substrate is transferred on silicon dioxide insulating layer 2.
Other steps are identical as specific embodiment one to seven.
Specific embodiment 9: one of present embodiment and specific embodiment one to eight difference are: described in step 4
Mechanical spin-coating method the step of be；First with the revolving speed spin coating 20s of 500r/min, then with the revolving speed spin coating 60s of 4000r/min,
Again with the revolving speed spin coating 20s of 500r/min.
Other steps are identical as specific embodiment one to eight.
Specific embodiment 10: one of present embodiment and specific embodiment one to nine difference are: described in step 5
Using magnetron sputtering method deposit metal, the metal be Al, Cu or Au, with a thickness of 0.2 μm.
Other steps are identical as specific embodiment one to nine.
Beneficial effects of the present invention are verified using following embodiment:
Embodiment one: a kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation,
Including Terahertz slower rays device function structure, silicon dioxide insulating layer 2, silicon substrate 1 and gate electrode structure；The Terahertz is slow
Optical device functional structure is made of the metamaterial structure unit of periodic arrangement, and the metamaterial structure unit is by patterned metal
Slot structure 4 and graphical two graphene ribbons structure 3 form, and patterned metal slot knot is arranged in graphical two graphene ribbons structure 3
Structure 4；The gate electrode structure is made of the first metal electrode Pad1 5 and the second metal electrode Pad2 6, the silicon substrate 1
On be provided with silicon dioxide insulating layer 2, graphical two graphene ribbons structure 3, the figure are provided on silicon dioxide insulating layer 2
Changing two graphene ribbon structures 3 is periodic arrangement；First metal electrode Pad1 5 and the second metal electrode Pad2 6 are respectively set
In the two sides of the Terahertz slower rays device upper surface, the graphical two graphene ribbons structure 3 of periodic arrangement is respectively with first
Metal electrode Pad1 5 and the second metal electrode Pad2 6 connection；The material of the silicon substrate 1 is low-doped High Resistivity Si, figure
The material for changing metal slot structure 4 is Al, with a thickness of 0.1 μm；
Left side stone in 6 direction 5 to the second metal electrode Pad2 of the first metal electrode Pad1, Terahertz slower rays device
Black alkene strip is to be interconnected by the first graphene ribbon structure 3-1, and the first electricity of formation is connect with the first metal electrode Pad1 5
Pole；The corresponding right side stone along 5 direction 6 to the first metal electrode Pad1 of the second metal electrode Pad2, Terahertz slower rays device
Black alkene strip is to be interconnected by the second graphene ribbon structure 3-2, and the second electricity of formation is connect with the second metal electrode Pad2 6
Pole；Wherein the metal wire of connection left side graphene strip and the metal wire of connection right side graphene strip are not attached to, first electrode
It is different with second electrode；
The metallic channel group that the patterned metal slot structure 4 is vertically arranged by two pairs of horizontally disposed metallic channels and one
At the two sides for the metallic channel being vertically arranged are arranged in two pairs of horizontally disposed metallic channels, along the metamaterial structure unit
Center line, two pairs of horizontally disposed metallic channel horizontal directions are symmetrical, and vertical direction is asymmetric；The metallic channel being vertically arranged has
One runs through the vertical gap of metamaterial structure unit along groove center line；The first graphene ribbon structure 3-1 and the second graphite
The size of alkene band structure 3-2 be length it is identical and of different size, be vertically disposed on two pairs of horizontally disposed metallic channels in the following,
Along the center line of the metamaterial structure unit, 3 horizontal directions of vertically disposed graphical two graphene ribbons structure are symmetrical, vertically
Direction is asymmetric；There is a vertical gap between the metal metamaterial structure adjacent cells.
The on-load voltage V between first electrode Pad1 and second electrode Pad2 and silicon substrate 11And V2Can it is electrostatically-doped regulate and control
Fermi's energy of graphene can flexibly tune Fermi's energy of two sides graphene strip by controlling two electrode voltage sizes, adjust each
The stiffness of coupling of element；By change three interelements stiffness of coupling, can flexible modulation Terahertz slower rays device electromagnetically induced it is saturating
The amplitude of bright window.
The metamaterial structure unit is the direction x element length PxIt is 300 μm, the direction y element length PyIt is 160 μm, it is described
2 μm of gap is arranged in metamaterial structure unit two sides, and 2 μm of gap is arranged in the metamaterial structural unit central.
As described in Figure 4, the left side graphene fermi level Ef1, pass through V1It connects Pad1 and carries out electrically doped, the right side
Graphene fermi level is Ef2, pass through V2It is electrically doped to connect Pad2 progress；Change left side graphene fermi level E when independentf1, right
Side graphene Fermi Ef2It is fixed as 0.1eV, can flexibly control the amplitude of low-frequency range EIT window.Resonance point is located at 0.870THz, In
When left side graphene Fermi can become 0.7eV from 0.1eV, the amplitude at transparent peak drops to 0.461 by 0.755.
As shown in figure 5, the left side graphene Fermi can Ef1, pass through V1It connects Pad1 and carries out electrically doped, the right side stone
Black alkene Fermi can be Ef2, pass through V2It is electrically doped to connect Pad2 progress；When fixed left side graphene Fermi can Ef1For 0.1eV, individually
Changing right side graphene Fermi can Ef2, can flexibly control the amplitude of high band EIT window.Resonance point is located at 0.947THz on right side
When Fermi can become 0.6eV from 0.1eV, the amplitude at transparent peak becomes 0.509 from 0.733.
As can be seen from figures 6 to 8, when the graphene Fermi of two sides can become 0.6eV and 1eV from 0.1eV and 0.08eV,
When frequency is 0.866THz and 0.945THz, the transparent peak of the electromagnetically induced that slower rays device is two is become by 0.764 and 0.771 respectively
For 0.527 and 0.548, when two sides graphene strip becomes 0.6eV and 1eV from 0.1eV and 0.08eV, slower rays device
Group delay peak value becomes 0.53097ps from 1.94139ps.
A kind of embodiment two: graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation
Preparation method, according to the following steps complete:
One, liner oxidation: silicon dioxide insulating layer 2 is grown on low-doped HR-Si substrate 1 using oxidation technology, is obtained
There is the silicon substrate 1 of silicon dioxide insulating layer 2 to growth；
Two, CVD method prepares graphene: first copper foil substrate is pre-processed with ferric nitrate, then using methane as carbon source, and argon
Respectively as protection and reducing gas, copper foil substrate after the pre-treatment carries out heat treatment growth graphene for gas and hydrogen, obtains
Stand-by graphene；
Three, graphene substrate shifts: then spin coating is had the graphene of PMMA to be placed in iron chloride by PMMA on the surface of graphene
Corrode copper foil substrate in solution, the graphene after obtaining corrosion copper foil, then in deionized water by the graphene after corrosion copper foil
It is cleaned multiple times, the graphene after being cleaned, finally has the silicon substrate 1 of silicon dioxide insulating layer 2 from deionization with growth
Graphene is fished in water, and removes the PMMA on graphene and secondary cleaning processing, completes to shift the graphene in copper substrate
On the silicon substrate 1 for having silicon dioxide insulating layer 2 to growth；
Four, graphene is graphical: being transferred to the silicon substrate 1 for growing and having silicon dioxide insulating layer 2 using mechanical spin-coating method
On graphene surface spin coating photoresist, then there is the graphene of photoresist to dry spin coating, be successively exposed, develop
And fixing, the graphical photoresist exposure mask of preparation graphene ribbon structure is obtained, then using oxygen plasma to the stone of photoresist exposure mask
Black alkene performs etching, and finally removes photoresist using acetone soak and cleans, obtains patterned graphene band structure；
Five, metal patternization: mechanical spin-coating method spin coating is first used in the patterned graphene body structure surface that step 4 obtains
Photoresist is successively exposed, develops and is fixed, and obtains the graphical photoresist exposure mask for preparing patterned metal slot structure 4, so
Metal is deposited on the graphical photoresist exposure mask for preparing patterned metal slot structure 4 using magnetron sputtering method afterwards, is finally set again
24 hours stripping metals and removal photoresist are impregnated in acetone soln, obtain patterned metal slot structure 4 and gate electrode structure,
Complete a kind of graphene-metallic channel Meta Materials Terahertz slower rays device preparation of biobelt flexible choice regulation；
Oxidation technology described in step 1 be dry oxidation technique, the dry oxidation technique be at high temperature, silicon and
Oxygen reaction generates silica；Heat treatment described in step 2 is, by pretreated copper foil silicon to 1050 DEG C, so
After cool the temperature to 1000 DEG C, be further continued for being cooled to room temperature；Cleaning described in step 3 is, by the graphene after corrosion copper foil
It is placed in deionized water, the graphene after being cleaned multiple times, after being cleaned；The transfer of substrate described in step 3 and secondary cleaning
Processing is to have the silicon substrate 1 of silicon dioxide insulating layer 2 to fish for the graphene after cleaning from the bottom of deionized water with growth, most
The graphene after the cleaning fished for is placed in acetone afterwards and impregnates removal PMMA, and is cleaned multiple times with deionized water, complete by
Graphene in copper substrate is transferred on silicon dioxide insulating layer 2；Metal, institute are deposited using magnetron sputtering method described in step 5
The metal stated is Al, with a thickness of 0.2 μm.
Claims (10)
1. a kind of graphene-metallic channel Meta Materials Terahertz slower rays device of biobelt flexible choice regulation, it is characterised in that
It includes Terahertz slower rays device function structure, silicon dioxide insulating layer (2), silicon substrate (1) and gate electrode structure；
The Terahertz slower rays device function structure is made of the metamaterial structure unit of periodic arrangement, the metamaterial structure
Unit is made of patterned metal slot structure (4) and graphical two graphene ribbons structure (3), graphical two graphene ribbons structure
(3) patterned metal slot structure (4) are set on；The gate electrode structure is by the first metal electrode Pad1 (5) and the second metal electricity
Pole Pad2 (6) is formed, and is provided with silicon dioxide insulating layer (2) on the silicon substrate (1), silicon dioxide insulating layer is set on (2)
It is equipped with graphical two graphene ribbons structure (3), the graphical two graphene ribbons structure (3) is periodic arrangement；First metal
Electrode Pad1 (5) and the second metal electrode Pad2 (6) is separately positioned on the two sides of the Terahertz slower rays device upper surface, period
Property arrangement graphical two graphene ribbons structure (3) respectively with the first metal electrode Pad1 (5) and the second metal electrode Pad2 (6)
Connection；
Left side graphite in the first metal electrode Pad1 (5) to second metal electrode Pad2 (6) direction, Terahertz slower rays device
Alkene strip is to be interconnected by the first graphene ribbon structure (3-1), and the first electricity of formation is connect with the first metal electrode Pad1 (5)
Pole；The corresponding right side along the second metal electrode Pad2 (6) to first metal electrode Pad1 (5) direction, Terahertz slower rays device
Graphene strip is to be interconnected by the second graphene ribbon structure (3-2), and connect with the second metal electrode Pad2 (6) formation the
Two electrodes；Wherein the metal wire of connection left side graphene strip and the metal wire of connection right side graphene strip are not attached to, and first
Electrode and second electrode difference；
The patterned metal slot structure (4) is made of two pairs of horizontally disposed metallic channels and a metallic channel being vertically arranged,
The two sides for the metallic channel being vertically arranged are arranged in two pairs of horizontally disposed metallic channels, along the metamaterial structural unit central
Line, two pairs of horizontally disposed metallic channel horizontal directions are symmetrical, and vertical direction is asymmetric；The metallic channel being vertically arranged has one
Run through the vertical gap of metamaterial structure unit along groove center line；The size of the graphical two graphene ribbons structure (3) is length
It spends identical and of different size, is vertically disposed on two pairs of horizontally disposed metallic channels in the following, along the metamaterial structure unit
Center line, vertically disposed graphical two graphene ribbons structure (3) horizontal direction is symmetrical, and vertical direction is asymmetric；Metal is super
There is a vertical gap between material structure adjacent cells.
2. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 1
Slower rays device, it is characterised in that the material of the silicon substrate (1) is low-doped High Resistivity Si, the patterned metal slot structure
(4) material is Al, Cu or Au, with a thickness of 0.2 μm.
3. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 1
Slower rays device, it is characterised in that the on-load voltage V between first electrode Pad1 and second electrode Pad2 and silicon substrate (1)1And V2,
On-load voltage V1And V2Can it is electrostatically-doped regulation graphene Fermi can, by control two electrode voltage sizes can flexibly tune two
Fermi's energy of side graphene strip, adjusts the stiffness of coupling of each element；By changing the stiffness of coupling of three interelements, can flexibly adjust
Control the amplitude of Terahertz slower rays device electromagnetically induced transparent window.
4. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 1
Slower rays device, it is characterised in that the metamaterial structure unit is the direction x element length PxIt is 300 μm, the direction y element length Py
It is 160 μm, 2 μm of gap is arranged in metamaterial structure unit two sides, and 2 μm of seam is arranged in the metamaterial structural unit central
Gap.
5. a kind of graphene-metallic channel Meta Materials Terahertz slower rays device preparation method of biobelt flexible choice regulation,
It is characterized in that the preparation method is completed according to the following steps:
One, liner oxidation: silicon dioxide insulating layer (2) are grown on low-doped HR-Si substrate (1) using oxidation technology, are obtained
There is the silicon substrate (1) of silicon dioxide insulating layer (2) to growth；
Two, CVD method prepares graphene: first copper foil substrate is pre-processed with ferric nitrate, then using methane as carbon source, argon gas and
For hydrogen respectively as protection and reducing gas, copper foil substrate after the pre-treatment carries out heat treatment growth graphene, obtains stand-by
Graphene；
Three, graphene substrate shifts: then spin coating is had the graphene of PMMA to be placed in iron chloride by spin coating PMMA on the surface of graphene
Corrode copper foil substrate in solution, the graphene after obtaining corrosion copper foil, then in deionized water by the graphene after corrosion copper foil
It is cleaned multiple times, the graphene after being cleaned, finally has the silicon substrate (1) of silicon dioxide insulating layer (2) from going with growth
Graphene is fished in ionized water, and removes the PMMA on graphene and secondary cleaning processing, is completed the graphite in copper substrate
Alkene, which is transferred to growth, to be had on the silicon substrate (1) of silicon dioxide insulating layer (2)；
Four, graphene is graphical: having the silicon substrate of silicon dioxide insulating layer (2) (1) being transferred to growth using mechanical spin-coating method
On graphene surface spin coating photoresist, then there is the graphene of photoresist to dry spin coating, be successively exposed, develop
And fixing, the graphical photoresist exposure mask of preparation graphene ribbon structure is obtained, then using oxygen plasma to the stone of photoresist exposure mask
Black alkene performs etching, and finally removes photoresist using acetone soak and cleans, obtains patterned graphene band structure；
Five, metal patternization: mechanical spin-coating method spin coating photoetching is first used in the patterned graphene body structure surface that step 4 obtains
Glue is successively exposed, develops and is fixed, and obtains the graphical photoresist exposure mask for preparing patterned metal slot structure (4), then
Metal is deposited on the graphical photoresist exposure mask for preparing patterned metal slot structure (4) using magnetron sputtering method, is finally set again
24 hours stripping metals and removal photoresist are impregnated in acetone soln, obtain patterned metal slot structure (4) and gate electrode knot
Structure completes a kind of graphene-metallic channel Meta Materials Terahertz slower rays device preparation of biobelt flexible choice regulation.
6. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 5
The preparation method of slower rays device, it is characterised in that oxidation technology described in step 1 is dry oxidation technique, the dry method oxygen
Chemical industry skill is that at high temperature, silicon and oxygen reaction generate silica.
7. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 5
The preparation method of slower rays device, it is characterised in that heat treatment described in step 2 is, extremely by pretreated copper foil silicon
1050 DEG C, 1000 DEG C are then cooled the temperature to, is further continued for being cooled to room temperature.
8. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 5
The preparation method of slower rays device, it is characterised in that cleaning described in step 3 is to have the graphene of copper foil to be placed in corrosion
Graphene in ionized water, after being cleaned multiple times, after being cleaned；Substrate transfer and secondary cleaning processing in step 3 are to use
Growth has the silicon substrate (1) of silicon dioxide insulating layer (2) to fish for the graphene after cleaning from the bottom of deionized water, finally will fishing
Graphene after the cleaning taken, which is placed in acetone, impregnates removal PMMA, and is cleaned multiple times with deionized water, completes copper substrate
On graphene be transferred on silicon dioxide insulating layer (2).
9. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 5
The preparation method of slower rays device, it is characterised in that the step of mechanical spin-coating method described in step 4 is；First turned with 500r/min
Fast spin coating 20s, then with the revolving speed spin coating 60s of 4000r/min, then with the revolving speed spin coating 20s of 500r/min.
10. a kind of graphene-metallic channel Meta Materials Terahertz of biobelt flexible choice regulation according to claim 5
The preparation method of slower rays device, it is characterised in that metal is deposited using magnetron sputtering method described in step 5, the metal is
Al, Cu or Au, with a thickness of 0.2 μm.
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