CN207069285U - A kind of Q-switched pulse laser based on tungsten disulfide - Google Patents
A kind of Q-switched pulse laser based on tungsten disulfide Download PDFInfo
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- CN207069285U CN207069285U CN201720891156.2U CN201720891156U CN207069285U CN 207069285 U CN207069285 U CN 207069285U CN 201720891156 U CN201720891156 U CN 201720891156U CN 207069285 U CN207069285 U CN 207069285U
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- tungsten disulfide
- pulse laser
- semiconductor laser
- concavees lens
- level crossing
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Abstract
A kind of Q-switched pulse laser based on tungsten disulfide, the laser main device include semiconductor laser, coupled lens, level crossing, Yb:GAB crystal, tungsten disulfide saturable absorber and concavees lens.Semiconductor laser with tail optical fiber output produces the continuous light of 976nm and passes through level crossing and Yb:After GAB crystal, by tungsten disulfide saturable absorber, finally by adjusting Q pulse laser that concavees lens output wavelength is 1044nm.The utility model utilizes saturable absorption characteristic possessed by New Two Dimensional material tungsten disulfide, obtains the pulse laser of high-energy, realizes the pulse output of nanosecond.
Description
Technical field
The utility model belongs to laser technology and its non-linear optical field, and in particular to a kind of tune based on tungsten disulfide
Q pulse lasers.
Background technology
2004, A.K.Gei etc. obtained single-layer graphene using mechanical stripping method first, has led tow -dimensions atom layer material
Research boom.Graphene is closely arranged according to hexagon by carbon atom, Stability Analysis of Structures, and single-layer graphene thickness is
0.335nm, it is because having the excellent performances such as high specific surface area, superpower electric conductivity and intensity in microelectronic element, crystalline substance
The fields such as body pipe, solar cell are widely used.It is necessary in order to open its band gap but graphene is a kind of zero band gap material
Band of the nanometer manufacture width less than 10nm is carried out to it and carries out various complicated doping process processing.However, these open stone
The technics comparing of black alkene band gap is complicated, and experimental repeatability is low, is unfavorable for large-scale application of the graphene in electronic device etc..
Therefore, two-dimentional transient metal chalcogenide compound (TMDCs) MX2（M represents transition metal X and represents Te, Se）Because having class stone
Black alkene structure obtains extensive research interest.There are 44 kinds of compounds that can form stable two-dimensional structure in these compounds, its
Middle metal（Such as NbTe2、TaTe2）, semiconductor（Such as MoS2、WS2、MoSe2、WSe2）, superconductor（Such as NbS2、NbSe2、TaS2）Deng
It is widely studied because with 1-2eV gap tunables, especially WS2Because showing bipolarity electrons transport property in electronics device
Have wide practical use in terms of part.WS2It is a kind of two-dimensional layered-structure material, interlamellar spacing 0.7nm.WS2Single layer structure is three
Individual plane layer S-W-S, each W atoms are surrounded by six S atoms inside elementary layer, in triangular prism column, W atoms and S atom it
Between by ion-Covalent bonding together, then pass through relatively weak Van der Waals force between layers and combine.The WS of individual layer2Film exists
Ultraviolet light is to all having preferable optical absorption characteristics, and individual layer WS in visible region2Film is direct band-gap semicondictor, its band
Gap is easy to excite photoelectron up to 2.1eV under the radiation of visible light of certain light intensity.Therefore, the WS of nanostructured2Not only moistening
Cunning and catalytic field have extensive use, and have wide application valency in fields such as electrode of lithium cell, hydrogen storage, photoelectricities
Value, possessed excellent physical chemical property and huge potential application foreground have attracted the pass of increasing researcher
Note.
Utility model content
The utility model is directed to deficiency of the prior art, there is provided a kind of Q-switched pulse laser based on tungsten disulfide.
To achieve the above object, the utility model uses following technical scheme：
A kind of Q-switched pulse laser based on tungsten disulfide, it is characterised in that including：The semiconductor laser arranged successively
Device, coupled lens, level crossing, Yb:GAB crystal, tungsten disulfide saturable absorber and concavees lens；The semiconductor laser band
Tail optical fiber exports, and continuous light focuses on by coupled lens caused by semiconductor laser, and the continuous light after focusing passes through plane successively
Mirror and Yb:GAB crystal, then by tungsten disulfide saturable absorber, finally by the output Q-switched pulse laser of concavees lens, wherein,
The concave surface of the concavees lens forms resonance towards the output end of tungsten disulfide saturable absorber between level crossing and concavees lens
Chamber.
To optimize above-mentioned technical proposal, the concrete measure taken also includes：
The continuous center wavelength of light of the semiconductor laser is 976nm, and concavees lens final output wavelength is
1044nm adjusting Q pulse laser.
The one side of the level crossing towards semiconductor laser is coated with 976nm anti-reflection films.
The one side of the level crossing towards semiconductor laser is coated with 1044nm high-reflecting films.
The one side of the concavees lens towards tungsten disulfide saturable absorber is coated with 1044nm high transmittance films.
The beneficial effects of the utility model are：
1st, compared to currently hotter graphene and transient metal sulfide, tungsten disulfide possesses 2.1ev directly energy band
Gap, and non-linear saturated characteristic uniqueness can be widely used in the fields such as electrode of lithium cell, hydrogen storage, photoelectricity；
2nd, can be by changing substrate surface tungsten disulfide material using tungsten disulfide saturable absorber as Q-switching device
The number of plies and defect, obtain different energy bandgaps and then realize tungsten disulfide saturable absorption material in different laser wavelengths
Operating；
3rd, using straight line intonation Q schemes, simple in construction, cost is cheap, it is easier to realizes that pulse exports.
Brief description of the drawings
Fig. 1 is overall structure diagram of the present utility model.
Embodiment
Describe the utility model in detail below in conjunction with the accompanying drawings.
It has now been found that for the band gap of two-dimensional material graphene zero, the tungsten disulfide of individual layer is because possessing " Sanming City
Control sandwich " special construction so that band gap can be from becoming direct indirectly, its direct band gap is about 2.1eV.Q is adjusted by tungsten disulfide
Lock film can obtain high energy pulse laser, realize the pulse laser output of nanosecond even femtosecond.Moreover, by preparing work
The optimization of skill can control tungsten disulfide number of layers and defect, can obtain different-energy band gap and then realize different laser waves
The normal operation of section saturable absorber.
Q-switched pulse laser based on tungsten disulfide as shown in Figure 1, linear cavity configuration, including half to arrange successively
Conductor laser 1, coupled lens 2, level crossing 3, Yb:GAB crystal 4, tungsten disulfide saturable absorber 5 and concavees lens 6.Pulse
Laser is used as Q-switching device using tungsten disulfide saturable absorber 5, is produced by the semiconductor laser 1 exported with tail optical fiber
The continuous light of 976nm, continuous light pass through level crossing 3 and Yb:After GAB crystal 4, by tungsten disulfide saturable absorber 5, finally by
The output wavelength of concavees lens 6 is 1044nm adjusting Q pulse laser.Wherein, the concave surface of concavees lens 6 is towards tungsten disulfide saturable absorption
The output end of body 5, the one side of level crossing 3 towards semiconductor laser 1 are coated with 976nm anti-reflection films, and level crossing 3 swashs towards semiconductor
The one side of light device 1 is coated with 1044nm high-reflecting films, and the one side of concavees lens 6 towards tungsten disulfide saturable absorber 5 is coated with 1044nm
High transmittance film.
The operation principle of optical parametric oscillator is：It is continuous that 976nm is produced by the semiconductor laser exported with tail optical fiber
Light, focused on by coupled lens 2, the continuous light after focusing passes through level crossing 3, and level crossing 3 reflects 1064nm light, with concavees lens
6 formation resonators, and Yb:GAB crystal 4 produces 1064nm light, by tungsten disulfide saturable absorber 5, finally by recessed
The output wavelength of mirror 6 is 1044nm adjusting Q pulse laser.
It should be noted that cited such as " on ", " under ", the use of "left", "right", "front", "rear" in utility model
Language, be merely convenient to narration understand, and be not used to limit the enforceable scope of the utility model, the change of its relativeness or
Adjustment, in the case where changing technology contents without essence, when being also considered as the enforceable category of the utility model.
It the above is only preferred embodiment of the present utility model, the scope of protection of the utility model is not limited merely to above-mentioned
Embodiment, all technical schemes belonged under the utility model thinking belong to the scope of protection of the utility model.It should be pointed out that pair
For those skilled in the art, some improvements and modifications under the premise of the utility model principle is not departed from,
It should be regarded as the scope of protection of the utility model.
Claims (5)
- A kind of 1. Q-switched pulse laser based on tungsten disulfide, it is characterised in that including：The semiconductor laser arranged successively （1）, coupled lens（2）, level crossing（3）、Yb:GAB crystal（4）, tungsten disulfide saturable absorber（5）And concavees lens（6）；Institute State semiconductor laser（1）Band tail optical fiber exports, semiconductor laser（1）Caused continuous light passes through coupled lens（2）Focus on, gather Defocused continuous light passes through level crossing successively（3）And Yb:GAB crystal（4）, then pass through tungsten disulfide saturable absorber（5）, Finally by concavees lens（6）Output Q-switched pulse laser；Wherein, the concavees lens（6）Concave surface towards tungsten disulfide saturable absorption Body（5）Output end, the level crossing（3）And concavees lens（6）Between form resonator.
- A kind of 2. Q-switched pulse laser based on tungsten disulfide as claimed in claim 1, it is characterised in that：The semiconductor Laser（1）The continuous center wavelength of light of transmitting is 976nm, concavees lens（6）Final output wavelength is that 1044nm Q impulse swashs Light.
- A kind of 3. Q-switched pulse laser based on tungsten disulfide as claimed in claim 2, it is characterised in that：The level crossing （3）Towards semiconductor laser（1）One side be coated with 976nm anti-reflection films.
- A kind of 4. Q-switched pulse laser based on tungsten disulfide as claimed in claim 2, it is characterised in that：The level crossing （3）Towards semiconductor laser（1）One side be coated with 1044nm high-reflecting films.
- A kind of 5. Q-switched pulse laser based on tungsten disulfide as claimed in claim 2, it is characterised in that：The concavees lens （6）Towards tungsten disulfide saturable absorber（5）One side be coated with 1044nm high transmittance films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720891156.2U CN207069285U (en) | 2017-07-21 | 2017-07-21 | A kind of Q-switched pulse laser based on tungsten disulfide |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720891156.2U CN207069285U (en) | 2017-07-21 | 2017-07-21 | A kind of Q-switched pulse laser based on tungsten disulfide |
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| CN207069285U true CN207069285U (en) | 2018-03-02 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512025A (en) * | 2018-04-10 | 2018-09-07 | 西南大学 | A kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse laser |
| CN113437630A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Based on 1T-TaS2And its application in laser |
| CN108512025B (en) * | 2018-04-10 | 2024-05-14 | 西南大学 | Passive Q-switched Yb CaYAlO4All-solid-state pulse laser |
-
2017
- 2017-07-21 CN CN201720891156.2U patent/CN207069285U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108512025A (en) * | 2018-04-10 | 2018-09-07 | 西南大学 | A kind of passive Q-adjusted Yb:CaYAlO4Complete solid state pulse laser |
| CN108512025B (en) * | 2018-04-10 | 2024-05-14 | 西南大学 | Passive Q-switched Yb CaYAlO4All-solid-state pulse laser |
| CN113437630A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Based on 1T-TaS2And its application in laser |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
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| TR01 | Transfer of patent right |
Effective date of registration: 20191011 Address after: 3047, F3, No.1-2, northeast corner, xiaoyingqiao, Qinghe, Haidian District, Beijing Patentee after: Ideal technology development (Beijing) Co., Ltd. Address before: The Olympic Avenue in Jianye District of Nanjing city of Jiangsu Province, No. 69 210019 Patentee before: Nanjing University of Information Science and Technology |