CN213460459U - A Ho-based: passive Q-switched laser of SSO saturable absorber - Google Patents
A Ho-based: passive Q-switched laser of SSO saturable absorber Download PDFInfo
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- CN213460459U CN213460459U CN202022682385.8U CN202022682385U CN213460459U CN 213460459 U CN213460459 U CN 213460459U CN 202022682385 U CN202022682385 U CN 202022682385U CN 213460459 U CN213460459 U CN 213460459U
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Abstract
The utility model provides a based on Ho: the passive Q-switched laser of the SSO saturable absorber comprises a semiconductor laser, a coupling lens group, a Tm: YLF crystal, first concave surface total reflection mirror, Ho: an SSO saturable absorber, an output mirror; the output end of the semiconductor laser is opposite to the coupling lens group, and the coupling lens group is connected with a Tm: YLF crystal relative, the Tm: YLF crystal is relative with the concave surface of first concave surface total reflection mirror, first concave surface total reflection mirror is relative with the concave surface of second concave surface total reflection mirror, second concave surface total reflection mirror and Ho: the input end of the SSO saturable absorber is opposite, and the ratio of Ho: the output of the SSO saturable absorber is opposite the input of the output mirror. The utility model discloses the production submicrosecond pulsed laser of the full depth modulation of low threshold value that can be stable.
Description
Technical Field
The utility model relates to a pulse laser technical field and nonlinear optics field, concretely relates to passively transfer Q laser.
Background
Both passive and active Q-switching techniques can achieve pulsed laser emission, but both have features and advantages compared to each other. Passive Q-switching is generally an important tool for achieving microsecond long pulses and sub-microsecond pulses, while active Q-switching is generally the dominant method for generating nanosecond and tens of nanosecond short pulses. In the passive Q-switching technique, the switching response time of the saturable absorber and the relaxation time of the excited electrons generally affect the time width, repetition frequency, and symmetry of the pulse shape of the Q-switching pulse. In general, fast saturable absorbers are well suited for generating short pulses and high repetition frequency emissions, however, microsecond and sub-microsecond pulse outputs can be obtained using slow saturable absorbers. Since sub-microsecond pulses have specific technical applications, the search for slow saturable absorbers with appropriate response times is also an important issue in the current laser field. In recent years, in the development and application of saturable absorbers available in the 2 μm band, many kinds of novel materials have been explored, including Cr2 +: ZnS and Ho: lu AG equal phase material. In the passive Q-switched laser, the output wavelength can be continuously tuned, and the tunable range covers 1.8-2.1 mu m wave band. It is worth mentioning that the output efficiency is significantly reduced by using tunable means to obtain laser output of the edge band (e.g. 1.8-1.9 μm).
There is currently a lack of a stable, low-threshold, full-depth modulation, apparatus for generating sub-microsecond pulsed lasers.
SUMMERY OF THE UTILITY MODEL
In order to solve the above problem, the utility model provides a based on Ho: a passive Q-switched laser of an SSO saturable absorber can stably generate sub-microsecond pulse laser by low-threshold full-depth modulation.
In order to achieve the above purpose, the technical scheme of the utility model is that:
a Ho-based: a passive Q-switched laser of SSO saturable absorber, comprising: semiconductor laser, coupling lens group, Tm: YLF crystal, first concave surface total reflection mirror, Ho: an SSO saturable absorber, an output mirror; the output end of the semiconductor laser is opposite to the coupling lens group, and the coupling lens group is connected with a Tm: YLF crystal relative, the Tm: YLF crystal is relative with the concave surface of first concave surface total reflection mirror, first concave surface total reflection mirror is relative with the concave surface of second concave surface total reflection mirror, second concave surface total reflection mirror and Ho: the input end of the SSO saturable absorber is opposite, and the ratio of Ho: the output end of the SSO saturable absorber is opposite to the input end of the output mirror;
wherein, the continuous light emitted by the semiconductor laser is incident to Tm through a coupling lens group: YLF crystals, Tm: and the YLF crystal is reflected by the first concave total reflection mirror to reach the second concave total reflection mirror and then is reflected to a Ho: SSO saturable absorber, finally via Ho: the SSO saturable absorber reaches the output mirror to output laser.
Further, the semiconductor laser emits continuous light with a center wavelength of 792 nm.
Further, the central wavelength of the laser output by the output mirror is 1908 nm.
Further, the Tm: the surface of the YLF crystal facing the semiconductor laser is plated with 792 nm antireflection film and 1908 nm high reflection film, and the surface of the YLF crystal facing away from the semiconductor laser is plated with 1908 nm antireflection film.
Further, one surface of the first concave fully-reflective mirror facing the second concave fully-reflective mirror is plated with 792 nm antireflection film and 1908 nm high-reflection film.
Further, the second concave total reflection mirror faces to Ho: one side of the SSO saturable absorber was coated with a 1908 nm high reflective film.
Further, the output mirror faces to Ho: one side of the SSO saturable absorber was coated with a 1908 nm high reflective film.
The utility model adopts the above technical scheme to compare with prior art, have following beneficial effect:
1. the utility model discloses Ho: ho3 in SSO saturable absorber+The effective absorption band can be positioned in a range of 1870-2050 nm, and the absorption characteristic is strongest particularly at 1940 nm.
2. The utility model discloses Ho: the SSO saturable absorber has the characteristics of negative thermo-optic coefficient, high thermal conductivity, weak thermal lens effect, weak thermal birefringence effect and the like.
3. The utility model discloses a Ho: the SSO saturable absorber is used as a saturable absorber material of the laser, and can well realize the output of sub-microsecond pulse laser according to the good absorber dynamic property and the moderate absorption loss at a specific wavelength.
Drawings
Fig. 1 is a schematic structural diagram of a passive Q-switched laser according to an embodiment of the present invention;
1. a semiconductor laser; 2. a coupling lens group; 3. tm: YLF crystal; 4. a first concave total reflection mirror; 5. a second concave total reflection mirror; 6. ho: an SSO saturable absorber; 7. and an output mirror.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below by referring to the drawings are exemplary only for explaining the present invention, and should not be construed as limiting the present invention.
As shown in fig. 1, an embodiment of the present invention provides a method for detecting a signal based on Ho: the passive Q-switched laser of the SSO saturable absorber comprises a semiconductor laser 1, a coupling lens group 2, a Tm: YLF crystal 3, first concave totally reflecting mirror 4, Ho: an SSO saturable absorber 6, an output mirror 7; the output end of the semiconductor laser 1 is opposite to the coupling lens group 2, and the coupling lens group 2 is connected with a Tm: YLF crystal 3 relative, the Tm: YLF crystal 3 is relative with the concave surface of first concave surface total reflection mirror 4, first concave surface total reflection mirror 4 is relative with the concave surface of second concave surface total reflection mirror 5, second concave surface total reflection mirror 5 and Ho: the input end of the SSO saturable absorber 6 is opposite, and the Ho: the output of the SSO saturable absorber 6 is opposite to the input of the output mirror 7;
wherein, the semiconductor laser 1 with tail fiber output emits continuous light with the central wavelength of 792 nm to enter Tm through the coupling lens group 2: YLF crystal 3, Tm: the YLF crystal 3 is reflected by the first concave totally reflecting mirror 4 to the second concave totally reflecting mirror 5, and then reflected to Ho: the SSO saturable absorber 6, finally passes through Ho: after reaching the output mirror 7, the SSO saturable absorber 6 outputs laser light with a central wavelength of 1908 nm.
The saturable absorber has the working principle that: the absorption of the saturable absorber material to the laser in the cavity can change along with the intensity of the optical field, when the light intensity is weaker, the light absorption is strong, the loss in the cavity is increased, and therefore the light transmittance is very low. As the light intensity increases, Ho: the absorption of the SSO material to light is weakened, the loss in the cavity is reduced, when the light intensity exceeds a specific value, the absorption is saturated, and the light transmittance can reach 100 percent, so that the light intensity receives the minimum loss while obtaining the maximum laser pulse, and the strong pulse laser is output. Furthermore, because Ho: the SSO crystal has larger energy level splitting, a wide emission spectrum area with an absorption spectrum bandwidth and good thermal conductivity, so that the requirement on generation of the passive Q-switched submicrosecond pulse in the wave band of 1.8-2.1 mu m can be met.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above description, and although the present invention has been disclosed with the preferred embodiment, it is not limited to the present invention, and any skilled person in the art can make modifications or changes equivalent to the equivalent embodiment without departing from the technical scope of the present invention, but all the modifications, equivalent substitutions, improvements and the like of the above embodiments are within the scope of the present invention.
Claims (7)
1. A Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: semiconductor laser, coupling lens group, Tm: YLF crystal, first concave surface total reflection mirror, Ho: an SSO saturable absorber, an output mirror; the output end of the semiconductor laser is opposite to the coupling lens group, and the coupling lens group is connected with a Tm: YLF crystal relative, the Tm: YLF crystal is relative with the concave surface of first concave surface total reflection mirror, first concave surface total reflection mirror is relative with the concave surface of second concave surface total reflection mirror, second concave surface total reflection mirror and Ho: the input end of the SSO saturable absorber is opposite, and the ratio of Ho: the output end of the SSO saturable absorber is opposite to the input end of the output mirror;
wherein, the continuous light emitted by the semiconductor laser is incident to Tm through a coupling lens group: YLF crystals, Tm: and the YLF crystal is reflected by the first concave total reflection mirror to reach the second concave total reflection mirror and then is reflected to a Ho: SSO saturable absorber, finally via Ho: the SSO saturable absorber reaches the output mirror to output laser.
2. The Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: the center wavelength of continuous light emitted by the semiconductor laser is 792 nm.
3. The Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: the central wavelength of the laser output by the output mirror is 1908 nm.
4. The Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: the Tm is as follows: the surface of the YLF crystal facing the semiconductor laser is plated with 792 nm antireflection film and 1908 nm high reflection film, and the surface of the YLF crystal facing away from the semiconductor laser is plated with 1908 nm antireflection film.
5. The Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: and one surface of the first concave fully-reflective mirror facing the second concave fully-reflective mirror is plated with 792 nm antireflection film and 1908 nm high-reflection film.
6. The Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: the second concave total reflection mirror faces towards Ho: one side of the SSO saturable absorber was coated with a 1908 nm high reflective film.
7. The Ho-based: a passive Q-switched laser of an SSO saturable absorber, comprising: the output mirror faces Ho: one side of the SSO saturable absorber was coated with a 1908 nm high reflective film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022682385.8U CN213460459U (en) | 2020-11-19 | 2020-11-19 | A Ho-based: passive Q-switched laser of SSO saturable absorber |
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| CN202022682385.8U CN213460459U (en) | 2020-11-19 | 2020-11-19 | A Ho-based: passive Q-switched laser of SSO saturable absorber |
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Effective date of registration: 20221214 Address after: 100000 Room S05, Floor 2, Building 1, No. 3, Yongchang North Road, Beijing Economic and Technological Development Zone, Daxing District, Beijing Patentee after: Ideal technology development (Beijing) Co.,Ltd. Address before: No.219, ningliu Road, Jiangbei new district, Nanjing, Jiangsu Province, 210032 Patentee before: Nanjing University of Information Science and Technology |