CN215343338U - High repetition frequency pulse laser - Google Patents
High repetition frequency pulse laser Download PDFInfo
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- CN215343338U CN215343338U CN202121429785.6U CN202121429785U CN215343338U CN 215343338 U CN215343338 U CN 215343338U CN 202121429785 U CN202121429785 U CN 202121429785U CN 215343338 U CN215343338 U CN 215343338U
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Abstract
The utility model discloses a high repetition frequency pulse laser, comprising: the laser pump comprises a laser pump source, a refrigerating plate, a coupling system, a resonant cavity and a shell, wherein a bonded crystal is arranged in the resonant cavity; the utility model uses Nd-YAG crystal as laser crystal, Cr4+YAG crystal is used as Q-switched crystal, and the two crystals are tightly combined by thermal bonding technology, so that the length of the resonant cavity is effectively shortened. And pumping light is incident from the end face of the crystal, and is excited and oscillated in the resonant cavity to release Q-switched pulses, so that 1064nm pulse laser output with high repetition frequency is finally obtained. The true bookBy using the novel scheme, the laser pulse output with high repetition frequency and high peak power can be realized under lower pumping power, and the laser pulse output device has wide application prospects in the fields of laser ranging, laser processing, laser radars, laser seed sources and the like.
Description
Technical Field
The utility model relates to the field of pulse lasers, in particular to a high repetition frequency pulse laser.
Background
In the early pulsed solid-state laser, the peak power of the laser output was not high, and the laser output oscillated only in the vicinity of the threshold, and the waveform was not a smooth pulse output but a series of random waveforms having non-uniform amplitudes and varying randomly with time. This "relaxation oscillation" phenomenon has limited the application of solid state lasers by the increased number of pulse tips and the broadening of the distribution of the spike train found by the increased pump energy. Currently, the Q-switching technique is commonly used to improve the waveform of the output light to make it appear as a smooth pulse output. In the 1 μm band, Cr4+YAG crystal has been widely used in passive Q-switched solid-state lasers due to its advantages of large absorption cross section, long ground state recovery time, high damage threshold, stable photochemical properties, long service life, etc.
The solid laser using the laser diode pump has the characteristics of narrow line width, high peak power, good stability and the like, and has wide application prospect in many fields. However, the change of the ambient temperature also affects the change of the output center wavelength of the laser diode, so that the absorption efficiency of the gain medium to the pump light is reduced, the waste heat is increased, and the existence of the thermal stress may cause damage to the laser crystal.
The Q-switching technology is utilized to realize laser pulse output, and the laser pulse output has wide application in the fields of biomedical treatment, industrial processing, high-speed optical communication, semiconductor coherent spectroscopy, military research and the like. In general, the shorter the laser cavity length, the narrower the pulse width of the passively Q-switched pulse. With the continuous development of the Q-switching technology, the peak power of the output pulse of the laser is obviously improved, and the pulse width is also continuously narrowed.
Up to now, pulse outputs of megawatt output peak power and sub-nanosecond pulse width have been obtained, but their repetition frequency has restricted the development of lasers.
The utility model provides a high repetition frequency pulse laser with a compact structure in order to overcome the defects in the prior art.
SUMMERY OF THE UTILITY MODEL
The utility model provides a high repetition frequency pulse laser, which has a simple structure, can effectively reduce the volume of the laser and obtain the pulse laser output with high repetition frequency, and is described in detail as follows:
a high repetition rate pulsed laser, the laser comprising: the laser device comprises a laser pumping source, a refrigerating plate, a coupling system, a resonant cavity and a shell, wherein a bonded crystal is arranged in the resonant cavity;
the pump light emitted by the laser pump source enters the resonant cavity through the coupling system; the resonant cavity consists of films plated on two sides of the bonded crystal to form a linear cavity structure;
the bonding crystal consists of a laser crystal and a Q-switched crystal, and the contact surfaces of the laser crystal and the Q-switched crystal are tightly combined and fixed.
The refrigerating plate is positioned below the laser pumping source; the coupling system is composed of a lens group. The laser pumping sources are laser diodes with different central wavelengths.
Furthermore, the left end of the laser crystal is plated with an antireflection film with a pumping light wave band and a total reflection film with a wave band of 1 μm, and the right end of the Q-switched crystal is plated with a partial reflection film with a wave band of 1 μm. YAG crystal of Nd length 3mm and Q-switched crystal of Cr length4+YAG crystal with a length of 1 mm.
The technical scheme provided by the utility model has the beneficial effects that:
1. the laser diode used by the laser pumping source is not limited to 808nm, and a laser diode with higher quantum efficiency of 885nm can be used, and pulse laser output with a wave band of 1 mu m can be obtained;
2. the central wavelength of the laser diode changes along with the change of the temperature of the laser diode, and the temperature drift characteristic influences the output characteristic of the pulse laser; the utility model is provided with the refrigeration plate for the laser diode, so that the temperature of the laser diode is in a set value, and the influence of the temperature on the center wavelength is reduced;
3. the laser has compact structure and high stability, can realize miniaturization, and has important application value in the fields of laser ranging, laser processing, laser radar, laser seed sources and the like.
Drawings
FIG. 1 is a schematic structural diagram of a miniaturized high repetition rate pulsed laser;
fig. 2 is a schematic structural diagram of a resonant cavity.
In the drawings, the components represented by the respective reference numerals are listed below:
1: a laser diode; 2: a refrigeration plate;
3: a coupling lens group; 4: a resonant cavity;
5: a housing.
Wherein the content of the first and second substances,
4-1: an input mirror; 4-2: an output mirror;
4-3: a laser crystal; 4-4: and (5) Q-switched crystals.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in further detail below.
In order to obtain high repetition frequency and high power pulse laser, the utility model provides a high repetition frequency pulse laser, which takes a laser diode as a pumping source, and acts on a resonant cavity after the divergent pumping light is subjected to shaping coupling, so that the pulse laser with high repetition frequency is finally obtained.
Referring to fig. 1, the high repetition rate pulsed laser includes: laser pumping source 1, refrigeration board 2, coupled system 3, resonant cavity 4, shell 5.
Referring to fig. 2, the resonant cavity 4 includes: the input mirror 4-1, the output mirror 4-2, the laser crystal 4-3, the Q-switched crystal 4-4, the laser crystal 4-3 and the Q-switched crystal 4-4 form a bonded crystal.
The laser pumping source 1 can be a laser diode, the pump light output by the laser pumping source has a certain divergence angle, the diverged pump light enters the resonant cavity 4 through the coupling system 3, and the laser pumping source is excited and oscillated to generate 1064nm pulse laser.
The coupling system 3 is a coupling lens group and is composed of two convex lenses with different focal lengths, the diameter of a light spot can be proportionally enlarged or reduced by adjusting the focal length of the convex lens and the distance between the two lenses, and the damage to a bonded crystal caused by too large power density of pump light can be avoided by selecting a proper diameter of the pump light, so that the collimation, the focusing and the size adjustment of the pump light can be realized.
Wherein, referring to fig. 2, the laser crystal 4-3 is Nd: YAG crystal, and the Q-switched crystal 4-4 is Cr4+YAG crystal, and the contact surface of the laser crystal 4-3 and the Q-switched crystal 4-4 is treated by thermal bonding technology to form permanent bonding. YAG crystal left input mirror 4-1 coated with antireflection film for pump light and high reflection film for 1 μm band laser, Cr4+The right output mirror 4-2 of YAG crystal is coated with a partial reflection film of 1 μm band light.
In the concrete implementation, the laser pumping source 1, the refrigerating plate 2, the coupling system 3 and the resonant cavity 4 are all arranged on the shell 5.
The film-coated layer at the front end of the bonded crystal is an input mirror 4-1 of the resonant cavity, and the film-coated layer at the rear end is an output mirror 4-2 of the resonant cavity.
The central wavelength of the laser pump source 1 has a drift process with the temperature, namely, the temperature is increased, the central wavelength is increased, the temperature is reduced, and the central wavelength is reduced. In order to enable the pump light to be better matched with the absorption peak of the gain medium, the temperature of the laser diode is controlled through the refrigerating plate 2, the temperature of the laser diode is set to be 20 ℃, and the influence of temperature drift on the laser output performance is reduced.
The pump light generated by the laser diode is incident into the coupling lens group through the optical fiber, the diameter of the pump light incident on the resonant cavity 4 can be changed by adjusting the focal length of the two lenses and the distance between the two lenses in the state that the pump light is continuous light, and the diameter of the pump light after adjustment is 200 μm.
The length of the resonant cavity 4 is one of the important indexes for measuring the output characteristics of the laser, and the shorter the resonant cavity 4 is, the narrower the pulse width of the output laser is, and the larger the peak power is. The output mirror of the traditional laser has a certain distance with the laser crystal, and the resonant cavity of the laser based on the bonding crystal is formed by a coating layer of the bonding crystal, so that the length of the resonant cavity 4 is greatly reduced.
Preferably, the length of the gain medium is 3mm, so that the requirement of the gain medium on the absorption of the pump light can be met, and the resource waste caused by overlong gain medium can be avoided. YAG crystal absorbs the pump light, and the absorption process is accompanied by the generation of heat, which can be equivalent to a thermal lens.
In order to reduce the influence of the thermal lens effect on the output characteristic, the bonded crystal is clamped in a heat sink in a side cooling mode, namely the bonded crystal is in a cuboid shape, and the four sides except the end face are wrapped by the heat sink.
In the embodiment of the present invention, except for the specific description of the model of each device, the model of other devices is not limited, as long as the device can perform the above functions.
Those skilled in the art will appreciate that the drawings are only schematic illustrations of preferred embodiments, and the above-described embodiments of the present invention are merely provided for description and do not represent the merits of the embodiments.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (5)
1. A high repetition rate pulsed laser, characterized in that the laser comprises: the laser device comprises a laser pumping source, a refrigerating plate, a coupling system, a resonant cavity and a shell, wherein a bonded crystal is arranged in the resonant cavity;
the pump light emitted by the laser pump source enters the resonant cavity through the coupling system; the resonant cavity consists of films plated on two sides of the bonded crystal to form a linear cavity structure;
the bonding crystal consists of a laser crystal and a Q-switched crystal, and the contact surfaces of the laser crystal and the Q-switched crystal are tightly combined and fixed.
2. The high repetition frequency pulsed laser of claim 1, wherein said refrigeration plate is located below the laser pump source; the coupling system is composed of a lens group.
3. The high repetition rate pulsed laser of claim 1, wherein said laser pumping sources are laser diodes of different center wavelengths.
4. The high repetition rate pulse laser as claimed in claim 1, wherein the left end of the laser crystal is coated with an anti-reflection film with a pump light band and a total reflection film with a 1 μm band, and the right end of the Q-switched crystal is coated with a partial reflection film with a 1 μm band.
5. A high repetition rate pulsed laser as claimed in claim 1 or claim 4, wherein the laser crystal is Nd: YAG crystal with a length of 3mm, and the Q-switched crystal is Cr4+YAG crystal with a length of 1 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121429785.6U CN215343338U (en) | 2021-06-25 | 2021-06-25 | High repetition frequency pulse laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121429785.6U CN215343338U (en) | 2021-06-25 | 2021-06-25 | High repetition frequency pulse laser |
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| CN215343338U true CN215343338U (en) | 2021-12-28 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116683269A (en) * | 2023-07-31 | 2023-09-01 | 中国科学院长春光学精密机械与物理研究所 | 1.06 mu m wave band chip-level semiconductor/solid vertical integrated passive Q-switched laser |
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2021
- 2021-06-25 CN CN202121429785.6U patent/CN215343338U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116683269A (en) * | 2023-07-31 | 2023-09-01 | 中国科学院长春光学精密机械与物理研究所 | 1.06 mu m wave band chip-level semiconductor/solid vertical integrated passive Q-switched laser |
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