CN104810719A - IG (Ince-Gaussian) mode controllable neodymium-doped yttrium vanadate and chromium-doped yttrium aluminium garnet composite microchip laser - Google Patents
IG (Ince-Gaussian) mode controllable neodymium-doped yttrium vanadate and chromium-doped yttrium aluminium garnet composite microchip laser Download PDFInfo
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- CN104810719A CN104810719A CN201510264614.5A CN201510264614A CN104810719A CN 104810719 A CN104810719 A CN 104810719A CN 201510264614 A CN201510264614 A CN 201510264614A CN 104810719 A CN104810719 A CN 104810719A
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Abstract
The invention discloses an IG (Ince-Gaussian) mode controllable neodymium-doped yttrium vanadate and chromium-doped yttrium aluminium garnet composite microchip laser and relates to a microchip laser capable of generating IG modes. The IG mode controllable neodymium-doped yttrium vanadate and chromium-doped yttrium aluminium garnet composite microchip laser is provided with a pumping source, a first cylindrical lens, a second cylindrical lens, a laser working medium Nd:YV04/ Cr4+:YAG composite crystal and an output coupling mirror which are arrayed from the front to the back in sequence and located on the same optical axis; a high-reflective film and an anti-reflective film are plated on the back surface of the laser working medium Nd:YV04/ Cr4+:YAG composite crystal to serve as a back cavity mirror of a laser cavity, and an reflective film is plated on the back surface of the output coupling mirror to serve as a front cavity mirror of the laser cavity. The IG mode controllable neodymium-doped yttrium vanadate and chromium-doped yttrium aluminium garnet composite microchip laser can directly generate the high-order IG modes.
Description
Technical field
The present invention relates to and can produce Yin Si-Gauss (IG) mode trickle chip laser, especially relate to the controlled Nd-doped yttrium vanadate compound of a kind of IG pattern and mix chromium yttrium-aluminium-garnet micro-slice laser, working-laser material is by gain media Nd:YVO
4with saturable absorber Cr
4+: the composite crystal that YAG is formed.
Background technology
The all solid state laser of semiconductor laser diode end pumping, because of its can outputting high quality laser beam and become the focus of Recent study.The characteristic such as high light beam quality, high-peak power, high repetition frequency of passive Q-regulaitng laser makes it have boundless application prospect in fields such as laser radar, laser ranging, remote sensing and control, micromachined.Nd:YVO
4crystal is one of crystal being suitable for the miniaturized solid state laser of laser diode end-face pump, and its absorption cross-section is larger, and Absorber Bandwidth is wider.The principle that saturable absorber is used as passive Q-adjusted switch is based on non-linear saturable absorption effect, and namely under low energy density, saturable absorber has very large absorption, inhibits the vibration of laser, can regard a loss of laser cavity as; Under high energy density, saturable absorber, by " bleaching ", does not absorb light, " completely " printing opacity.What be used as passive Q-adjusted switch at present mainly contains Cr
4+the crystal of ion doping and pottery are as Cr
4+: YAG, semiconductor saturable absorbing mirror (SESAM), organic dyestuff, colour centre crystal etc.Mix Cr
4+owing to having, damage threshold is high, absorption cross-section is large, saturated light intensity is little, cost is low and advantages of simple structure and simple and being widely used in passively Q-switch solid-state laser for ionic crystals saturable absorber.Cr
4+: YAG crystal is a kind of novel near-infrared wideband adjustable solid laser material occurred in 1988, there is good heat conductivility, stable physicochemical properties, high antibody Monoclonal threshold value, it has a wide range of applications in fields such as remote recording, optical communication, medical treatment, laser technologies, becomes the focus of Recent study.
2000, and Yu Jin ([1] Yu Jin. the Nd:YVO of quantum well diode pumping
4/ Cr
4+: YAG high-repetition-rate passive Q-regulaitng laser. optical precision engineering, 2000,8 (1): 23-25.) at the Nd:YVO of quantum well diode end-face pump
4in laser, use Cr
4+: YAG, as saturable absorber, adopts end pumping in simple linearly flat-curved cavity, obtain the high-repetition-rate passive Q regulation pulse Laser output of 1.06 μm.When absorptive pumping power is 528.3mW, exporting pulse energy is 0.19 μ J, and pulse duration is 32ns, and pulse recurrence rate reaches 158.7kHz.At insertion Cr
4+: before YAG saturable absorber, obtain 1.06 μm of continuous lasers and export; By Cr
4+: YAG wafer achieves the Nd:YVO of the continuous pumping of quantum-well diode laser end face after inserting resonant cavity
4/ Cr
4+: YAG high-repetition-rate passive Q regulation pulse Laser output.2004, the people such as Li Jian ([2] JianLi, Cuiling Wang, Yanzi Wang, etc.High peak power laser-diode-pumped passivelyQ-switched Nd:YVO
4/ Cr
4+: YAG laser.Chinese Optics Letters, 2004,2 (10): 590-591.) have studied the passive Q-adjusted Nd:YVO of LD pumping
4/ Cr
4+: the situation of change of YAG laser average output power, pulse repetition frequency, pulse duration and peak power under different pump power.When pump power is 21.2W, the average output power of 4.23W and the pulse peak power of 18kW can be obtained.2009, and the people such as Chen Zemin ([3] Chen Zemin, Li Liwei, Min great Yong etc. the Cr of high power LD pumping
4+: the passive Q-adjusted Nd:YVO of YAG
4laser. optics and photoelectric technology, 2009,7 (2): 82-85.) have studied that pump power, chamber are long, outgoing mirror transmitance on the impact of power output, and the change of pulse repetition frequency and pulse duration under different pump power.Be 8cm when chamber is long, when pump power is 27W, obtain the Q impulse sequence that repetition rate is 37.8kHz, average output power is 3.5W, individual pulse energy is 93 μ J, pulsewidth is 24nm, peak power is 3.9kW.
And be also subject to increasing attention by the application of high-order IG transverse mode in chaos study, laser cooling, optical acquisition and fluid physics etc. that all solid state laser of semiconductor laser diode pumping produces.2004, the people such as Schwarz ([4] Ulrich T.Schwarz, Miguel A.Bandres and Julio C.Guti é rrez-Vega.Observationof Ince-Gaussian modes in stable resonators.Optics Letters, 2004,29 (16): 1870-1872.) carried out and utilized laser diode-pumped Nd:YVO
4laser produces the research of high-quality high-order IG pattern.Experiment adopts the semiconductor laser diode of 808nm pumping to be pumping source, uses Nd:YVO
4for working-laser material, adopting the structure of flat-cavity, by distance small for oblique for output coupling mirror movement one being destroyed the symmetry of laserresonator, thus obtaining the output of IG pattern.As for the principle obtaining IG pattern, at present, except this mechanism of symmetry of destruction resonant cavity generally known, nearest employing Cr, Nd:YAG self Q switching laser crystal is as operation material, by the angle of inclination pump beam incidence at Cr, directly create high-order IG Mode for Laser in Nd:YAG micro-slice laser and export ([5] Dong J., Ma J., Ren Y., XuG., Kaminskii A.A.Generation of Ince-Gaussian beams in highly efficient, nanosecondCr, Nd:YAG microchip lasers.Laser Physics Letters, 2013, 10 (8): 085803).Result of study shows, in laser crystal, the uneven distribution of Doped ions density causes the different distributions of excited state ion to be a kind of possible cause directly producing IG pattern.
Summary of the invention
The controlled Nd-doped yttrium vanadate compound of a kind of IG pattern is the object of the present invention is to provide to mix chromium yttrium-aluminium-garnet micro-slice laser.
The present invention is provided with pumping source, the first lens pillar, the second lens pillar, laser working medium Nd:YVO
4/ Cr
4+: YAG composite crystal, output coupling mirror.
Described pumping source, the first lens pillar, the second lens pillar, laser working medium Nd:YVO
4/ Cr
4+: YAG composite crystal and output coupling mirror are arranged in order from front to back and are positioned on same optical axis; Laser working medium Nd:YVO
4/ Cr
4+: the rear surface of YAG composite crystal is coated with high-reflecting film and the anti-reflection film Effect of Back-Cavity Mirror as laser cavity, and the rear surface plating reflectance coating of output coupling mirror is as the front cavity mirror of laser cavity.
If the focal length of note the first lens pillar, the second lens pillar is respectively f
1, f
2, note gain medium Nd:YVO
4the thickness of part is d, then the distance of pumping source to the first lens pillar is f
1, the first lens pillar to the second lens pillar distance is 0 ~ f
1+ f
2between adjustable, the second lens pillar is to laser working medium Nd:YVO
4/ Cr
4+: the rear surface distance of YAG composite crystal is f
2-d ~ f
2adjustable between+d.Laser working medium Nd:YVO
4/ Cr
4+: form micro sheet structure together with YAG composite crystal is pressed on output coupling mirror.
Described pumping source can adopt the 808nm single tube high brightness semiconductor laser of high brightness, described Nd:YVO
4/ Cr
4+: the rear surface of YAG composite crystal is (namely towards the Nd:YVO of pumping source
4end face) plate anti-reflection film, the 1064nm high-reflecting film of 808nm, the rear surface plating 1064nm reflectance coating of described output coupling mirror, coated reflection rate R
ocscope is 40% ~ 98%.
The present invention is that a kind of controlled Nd-doped yttrium vanadate compound of high-order IG pattern that can directly produce mixes chromium yttrium-aluminium-garnet micro-slice laser.
Feature of the present invention is:
(1) by laser working medium Nd:YVO
4/ Cr
4+: the micro-slice laser of YAG composite crystal composition, two surfaces of composite crystal are parallel planes, the laserresonator of composition is Fabry Perot resonator (F-P cavity), its advantage is that beam directionality is fabulous, and the angle of divergence is little, and mode volume is larger, single longitudinal mode vibration is obtained than being easier to, the laser structure of microplate can export high brightness, high-peak power, the pulse laser of high light beam quality.
(2) use 808nm single tube high brightness semiconductor laser as pumping source, its brightness is high, and volume is little.The mode of its indirect pumping is for excite in lasing process, and ground state particle is first energized into a certain intermediate state energy level by pumping system, and then transfers to upper laser level.
(3) by thermal bonding technology gain medium Nd:YVO
4with saturable absorber Cr
4+: YAG Direct Bonding forms composite crystal, eliminates Nd:YVO
4crystal and Cr
4+: the optical loss that the interface between YAG crystal is formed, can improve laser thermal properties and beam quality, also be convenient to directly form plane-parallel resonator, to obtain efficient Laser output.
(4) more details utilizing the beam quality analysis instrument based on camera to provide beam power density to distribute and true 2D analyze.Complicated mode pattern can be identified like this when optimizing Optical Maser System.The IG high-order transverse mode produced by micro-slice laser in experiment is received by beam quality analysis instrument, uses Thorlabs Beam software to observe 2D/3D high-order transverse mode style by the connection with computer.
The invention has the advantages that:
(1) micro-slice laser of the present invention is within the scope of larger pump power, and can obtain the light pulse Laser output of different repetition rate, and the peak power of laser pulse is high, single pulse width is narrow.
(2) use the single-tube semiconductor laser of high brightness as pumping source, a whole set of Laser Devices can be made more miniaturized, integrated and practical.The mode of indirect pumping has the following advantages relative to pump-coupling mode: first, and intermediate level has the life-span much larger than upper laser level, and can be being with of a lot of energy level formation, thus intermediate level is easy to accumulate a large amount of particles; Secondly, the probability in some cases particle being energized into intermediate level from ground state is more much bigger than the probability being directly energized into upper energy level, this reduces the requirement to pumping.Therefore the mode of pumping indirectly can obtain the higher Laser output of efficiency.
(3) have employed thermal bonding technology and make Nd:YVO
4with saturable absorber Cr
4+: YAG bonding is composite crystal, and it is long effectively can to shorten chamber, compressed pulse widths, improves pulse peak power, thus obtains high-peak power, miniaturized, integrated Solid State Laser light source.
(4) saturable absorber Cr is adopted
4+: YAG directly produces IG pattern as Q switched element, is convenient to the optimal design of laser, and the difficulty reducing laser development and safeguard, convenient operation is studied.
(5) utilize plane-parallel Fabry Perot chamber in works, the single tube diode → composite crystal of end pumping, on same straight line, highly shortened chamber long, simplifies the structure, and making to be designed to portable miniaturized products becomes possibility.
(6) optical element of laser use is few, and production cost is low, simple and compact for structure, and the operation of being convenient to produce installation and layman uses.
Accompanying drawing explanation
Fig. 1 is the structure composition diagram of the embodiment of the present invention.
Fig. 2 is Nd:YVO
4/ Cr
4+: the passive Q-adjusted micro-slice laser of YAG directly produces IG
0,0the experimental result that Mode for Laser light beam exports.
Fig. 3 is Nd:YVO
4/ Cr
4+: the passive Q-adjusted micro-slice laser of YAG directly produces IG
0 3,1the experimental result that Mode for Laser light beam exports.
Fig. 4 is Nd:YVO
4/ Cr
4+: the passive Q-adjusted micro-slice laser of YAG directly produces IG
0 5,1the experimental result that Mode for Laser light beam exports.
Fig. 5 is Nd:YVO
4/ Cr
4+: the passive Q-adjusted micro-slice laser of YAG directly produces IG
e 5,1the experimental result that Mode for Laser light beam exports.
Fig. 6 is Nd:YVO
4/ Cr
4+: the passive Q-adjusted micro-slice laser of YAG directly produces IG
e 6,2the experimental result that Mode for Laser light beam exports.
Embodiment
Following examples will the present invention is further illustrated by reference to the accompanying drawings.
See Fig. 1, the embodiment of the present invention is provided with pumping source 1, first lens pillar 2, second lens pillar 3, working-laser material Nd:YVO
4/ Cr
4+: YAG composite crystal 4, the 1st plated film 5, the 2nd plated film 6, output coupling mirror 7 and beam quality analysis instrument 8; Selected pumping source 1, first lens pillar 2, second lens pillar 3, laser working medium Nd:YVO
4/ Cr
4+: YAG composite crystal 4, output coupling mirror 7 and beam quality analysis instrument 8 are arranged in order from front to back and are positioned on same optical axis; Laser working medium Nd:YVO
4/ Cr
4+: the rear surface of YAG composite crystal 4 is provided with the 1st plated film 5, and the rear surface of output coupling mirror 7 is provided with the 2nd plated film 6, forms the front Effect of Back-Cavity Mirror of laser cavity.
Described pumping source 1 is 808nm single tube high brightness semiconductor laser, laser power 10W; Its launching cross-sectional area is 1 μm × 50 μm.Then through two focal lengths be first lens pillar 2 of 8mm and second lens pillar 3 optical coupled and after focusing on, at working-laser material Nd:YVO
4/ Cr
4+: the plane of incidence up one-tenth area of YAG composite crystal is the launching spot of (80 μm × 80 μm); The present invention's gain medium used is one piece of Nd:YVO along the cutting of <111> direction
4laser crystal.Nd
3+ion doping concentration is 1at.%, Cr
4+the doping content of ion is 0.01at.%.Nd:YVO
4crystal and Cr
4+: it is 10mm × 10mm that YAG crystal and size are all cross section, and thickness is 1mm.Towards the Nd:YVO of pumping source
4anti-reflection film, the 1064nm high-reflecting film of the end face plating 808nm of crystal, the end face plating 1064nm reflectance coating of output coupling mirror, reflectivity R
ocscope be 40%-98%.Nd:YVO
4/ Cr
4+: YAG composite crystal uses optics fixture to be placed on experiment porch, at room temperature works.
Measure the laser activity of the 1064nm exported, laser power meter can be used to measure the average output power of laser.For the test (comprising the waveform of output laser pulse, repetition rate characteristic and pulse width characteristic) of output laser pulse characteristic, test by the digital oscilloscope of high sensitivity, high bandwidth.For pattern and the beam quality characteristic of Output of laser, monitored and record by beam quality analysis instrument.Spectroanalysis instrument is oscillation longitudinal mode number and situation of vying each other thereof in Real-Time Monitoring laser cavity then.
In the present invention, laser produces the main mechanism of IG pattern and is: the pump light of large pump spot incide with the laser crystal of a minute angle (about 5 °) that tilted perpendicular to horizontal axis after, the skewness of the particle inverted population that laser crystal inside is produced with and realize the Laser output of different I G pattern.The single tube diode of the 808nm adopted in experiment, as pumping source, incides Nd:YVO
4/ Cr
4+: near-infrared IG Mode for Laser YAG composite crystal producing 1064nm exports.
Core key technology of the present invention is the use of Nd:YVO
4/ Cr
4+: YAG composite crystal.Its preparation process is by thermal bonding technology (Thermal bonding), first by two pieces through precision machined Nd:YVO
4crystal and Cr
4+: YAG crystal is close together under the condition of room temperature, makes both combine by the active force between two surfaces.Plane of crystal after treatment, can obtain hydrophilic surface, and two high and that roughness is thin hydrophilic surfaces of machining accuracy can rely on the effect of hydrogen bond at room temperature to attract each other, and form optical cement.Along with the rising of temperature, the diffusion on interface of ion and hole aggravates gradually, and has a lot of dangling bonds due to surface, through the lattice adjustment of certain hour and reconstruct, finally can form a stable structure.([6] Lv Jingshu, Yan Ping, Gong Mali etc. thermal bonding technology and the application in laser thereof. optical technology .2002,28:355-359.).
Due to laser operationally, only some is converted into laser for the energy of pump light, remaining energy all consume by other competition mechanism, as radiationless transition, spontaneous radiation, matrix absorption etc., these processes all can produce heat in laser medium.General high power system all must add cooling system, but cooling system can bring the uneven of laser medium interior temperature distribution, makes internal temperature higher than edge.Because the refractive index of crystal can change along with variations in temperature, will produce thermal lensing effect like this, also can produce stress birfringence after crystal is heated, these all can make beam quality be had a strong impact on.The heat that the microchip laser technology that the present invention adopts makes pump light produce at crystal can by the bump contact of laser crystal and heat-conductive characteristic splendid aluminium substrate efficiently radiates heat, thus make laser cooling effectiveness under normal temperature work high.End pumping make the heat transfer direction of crystal and temperature gradient main axially, thus make the Temperature Distribution of crystal very even, wavefront deformation is very little.Adopt end pumping mode to make heat transfer direction parallel with the direction of laser beam propagation (namely axially) simultaneously, radial symmetry gradient is very little, thus avoid the inherent limitations of Conventional stick crystal laser, as the distortion, birefringence effect etc. of the thermal lensing effect under high power, laser crystal.Therefore, the optical property that Microchip Solid Laser can be easy to obtain very high power output and not affect its brilliance, generally can obtain the high light beam quality Laser output (M close to diffraction limit
2<1.1).
By Nd:YVO in the present invention
4crystal and Cr
4+: YAG crystal bonding forms an integrated laser system, achieves the miniaturization of system and integrated.The adhesive surface close contact of discrete crystal, forms an entirety, can reduce to regulate difficulty, is also conducive to the design of clamping structure.
The Nd:YVO of the direct end pumping of 808nm single tube laser diode
4/ Cr
4+: the discrete crystal micro-chip laser of YAG, relates generally to Nd:YVO
4crystal is as gain medium and Cr
4+: YAG crystal as passive Q-adjusted switch, by controlling the Cr of different initial transmission
4+: the Nd:YVO of YAG crystal, different levels of doping and thickness
4the miniaturized micro-slice laser that crystal realizes high-peak power, the high-order IG Mode for Laser of short pulse exports.
Fig. 2 ~ 6 are Nd:YVO
4/ Cr
4+: the passive Q-adjusted micro-slice laser of YAG directly produces IG pattern (IG
0,0iG
0 3,1iG
0 5,1iG
e 5,1iG
e 6,2) laser beam export experimental result.
Claims (4)
- The controlled Nd-doped yttrium vanadate compound of 1.IG pattern mixes chromium yttrium-aluminium-garnet micro-slice laser, it is characterized in that being provided with pumping source, the first lens pillar, the second lens pillar, laser working medium Nd:YVO 4/ Cr 4+: YAG composite crystal, output coupling mirror;Described pumping source, the first lens pillar, the second lens pillar, laser working medium Nd:YVO 4/ Cr 4+: YAG composite crystal and output coupling mirror are arranged in order from front to back and are positioned on same optical axis; Laser working medium Nd:YVO 4/ Cr 4+: the rear surface of YAG composite crystal is coated with high-reflecting film and the anti-reflection film Effect of Back-Cavity Mirror as laser cavity, and the rear surface plating reflectance coating of output coupling mirror is as the front cavity mirror of laser cavity.
- 2. the controlled Nd-doped yttrium vanadate compound of IG pattern mixes chromium yttrium-aluminium-garnet micro-slice laser as claimed in claim 1, if it is characterized in that, the focal length of the first lens pillar is designated as f 1, the focal length of the second lens pillar is designated as f 2, gain medium Nd:YVO 4the thickness of part is designated as d, then the distance of pumping source to the first lens pillar is f 1, the first lens pillar to the second lens pillar distance is 0 ~ (f 1+ f 2) between adjustable, the second lens pillar is to laser working medium Nd:YVO 4/ Cr 4+: the rear surface distance of YAG composite crystal is (f 2-d) ~ (f 2+ d) between adjustable; Laser working medium Nd:YVO 4/ Cr 4+: form micro sheet structure together with YAG composite crystal is pressed on output coupling mirror.
- 3. the controlled Nd-doped yttrium vanadate compound of IG pattern mixes chromium yttrium-aluminium-garnet micro-slice laser as claimed in claim 1, it is characterized in that described pumping source adopts the 808nm single tube high brightness semiconductor laser of high brightness.
- 4. the controlled Nd-doped yttrium vanadate compound of IG pattern mixes chromium yttrium-aluminium-garnet micro-slice laser as claimed in claim 1, it is characterized in that described Nd:YVO 4/ Cr 4+: the rear surface of YAG composite crystal, namely towards the Nd:YVO of pumping source 4anti-reflection film, the 1064nm high-reflecting film of end face plating 808nm, the rear surface plating 1064nm reflectance coating of described output coupling mirror, coated reflection rate R ocscope is 40% ~ 98%.
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|---|---|---|---|
| CN201510264614.5A CN104810719A (en) | 2015-05-22 | 2015-05-22 | IG (Ince-Gaussian) mode controllable neodymium-doped yttrium vanadate and chromium-doped yttrium aluminium garnet composite microchip laser |
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| CN113363798A (en) * | 2021-05-20 | 2021-09-07 | 厦门大学 | Adjustable high-optical-efficiency broadband multi-longitudinal-mode Raman microchip laser |
| CN116683269A (en) * | 2023-07-31 | 2023-09-01 | 中国科学院长春光学精密机械与物理研究所 | 1.06 mu m wave band chip-level semiconductor/solid vertical integrated passive Q-switched laser |
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| CN113363798A (en) * | 2021-05-20 | 2021-09-07 | 厦门大学 | Adjustable high-optical-efficiency broadband multi-longitudinal-mode Raman microchip laser |
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Application publication date: 20150729 |