CN211556411U - High repetition frequency 1.5um human eye safety Q-switched microchip laser - Google Patents
High repetition frequency 1.5um human eye safety Q-switched microchip laser Download PDFInfo
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- CN211556411U CN211556411U CN201922301907.2U CN201922301907U CN211556411U CN 211556411 U CN211556411 U CN 211556411U CN 201922301907 U CN201922301907 U CN 201922301907U CN 211556411 U CN211556411 U CN 211556411U
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Abstract
The utility model discloses a high repetition frequency 1.5um human eye safety Q-switched microchip laser, which comprises a semiconductor pumping source arranged in sequence; a coupling system; a first cavity mirror; a gain medium; q-switched crystal; a second cavity mirror; the pump light emitted by the pump source enters the gain medium through the coupling system and the first cavity mirror, the light excited by the gain medium is partially absorbed by the Q-switched crystal, and Q-switched pulse laser oscillation output is formed in a laser cavity formed by the first cavity mirror and the second cavity mirror. The utility model discloses use the YAB crystal that Er/Yb was two to mix as the gain medium to and mix the cobalt spinel for transferring the Q crystal, and adopt the continuous pumping mode, obtained stable high repetition frequency (100 kHz ~2 MHz) and short pulse width (1 ~10 ns) laser output.
Description
Technical Field
The utility model belongs to the technical field of laser detection technique device and specifically relates to high repetition frequency 1.5um human eye safe Q-switched microchip laser.
Background
The working principle of the laser radar is as follows: and emitting laser to the detection target, then reflecting the laser by the target, and detecting the reflected light by a radar detector to obtain information such as the distance, the angle, the height, the shape and the like of the target. At present, most of laser radars use a TOF method for detection, and the detection capability of the laser radars is greatly related to energy university and beam quality of emitted laser. At present, most of laser radars use a 905nm semiconductor laser as a transmitting light source, and because the M square factor of the slow axis direction of the semiconductor laser is far greater than the diffraction limit, the quality of the emitted laser beams is poor, and meanwhile, the requirements on the safety of human eyes and the energy of the wavelength of 905nm cannot be too high, so the detection capability of the laser radar is greatly limited. And the laser wavelength of 1.5um wave band is located good atmosphere transmission window, has the nature of human eye safety simultaneously again, in the aspect of laser radar detection, its detectivity and application effect have obtained very big promotion, and the peak power of using can reach thousands kW orders of magnitude, and corresponding solid laser instrument beam quality can accomplish to be close to diffraction limit.
Disclosure of Invention
In order to solve the defects of the prior art, the utility model aims to provide a high repetition frequency 1.5um human eye safe Q-switched microchip laser which is reliable to implement and has good performance.
In order to realize the technical purpose, the utility model discloses a technical scheme does:
high repetition frequency 1.5um human eye safe Q-switched microchip laser, it includes that set gradually:
the pumping source is used for providing pumping light, and the pumping adopts a continuous pumping mode;
a coupling system for coupling pump light into the laser cavity;
a first cavity mirror;
the gain medium is used for generating required 1.5um laser radiation and is an Er/Yb: YAB crystal;
the Q-switched crystal is used for generating required Q-switched pulses and is cobalt-doped spinel;
a second cavity mirror;
a laser resonant cavity is formed between the first cavity mirror and the second cavity mirror and is used for forming oscillation output by 1.5um laser;
the gain medium and the Q-switched crystal are glued or optical cement are in an integral structure.
As a possible implementation manner, further, the first cavity mirror is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror is plated with a partial reflection film corresponding to the working wavelength.
As a possible implementation manner, further, the first cavity mirror is directly plated on the end surface of the gain medium close to the first cavity mirror, and the second cavity mirror is directly plated on the end surface of the Q-switched crystal close to the second cavity mirror.
As a possible embodiment, further, the wavelength of the pump light of the pump source is 900nm to 1100 nm.
As a possible embodiment, further, the pump source is a semiconductor laser or a solid-state laser.
As a possible implementation manner, further, the coupling system is composed of more than one lens, and an antireflection film adapted to the wavelength of the pump light emitted by the pump source is plated on the end face of the lens.
As a possible implementation, further, the assembly of the gain medium and the Q-switched crystal is processed to a very thin thickness by a precise polishing process to combine into a very short cavity.
As a possible embodiment, further, the front and back end faces of the assembly formed by gluing the gain medium and the Q-switched crystal together are glued together by two sapphire crystals.
As a possible implementation, further, the laser wavelength output through the laser resonator may be the ratio of Er/Yb: the YAB crystal has an emission spectrum with any wavelength of 1500 nm-1600 nm.
As a possible alternative, the gain medium may be placed after the Q-switched crystal.
As a possible alternative, the laser gain medium Er/Yb: YAB crystal can be replaced with Er/Yb: phosphate glass.
Adopt foretell technical scheme, compared with the prior art, the utility model, its beneficial effect who has is: by adopting a continuous pumping mode, the mass ratio of the gain medium Er/Yb: a microchip short cavity formed by combining YAB crystals and the Q-switched crystal cobalt-doped spinel is pumped to generate laser of a 1.5um wave band of passively switched Q, the repetition frequency can reach 100 kHz-2 MHz, the repetition frequency is stable, the beam quality is close to the diffraction limit, and therefore the detection capability of the laser radar can be improved.
Drawings
The invention will be further explained with reference to the drawings and the detailed description below:
FIG. 1 is a schematic diagram of embodiment 1 of the present invention;
fig. 2 is a schematic diagram of embodiment 2 of the present invention.
Detailed Description
Example 1
As shown in fig. 1, the present invention includes a pump source 101, a coupling system 102, a first cavity mirror 103, a gain medium 104, a Q-switched crystal 105 and a second cavity mirror 106, which are arranged in sequence, wherein the gain medium 104 and the Q-switched crystal 105 are optically bonded into an integral structure.
Wherein, the gain medium 104 is Er/Yb: crystals of YAB; the first cavity mirror 103 is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror 106 is plated with a partial reflection film corresponding to the working wavelength.
In addition, the first cavity mirror 103 is directly plated on the end surface of the gain medium 104 close to the gain medium, and the second cavity mirror 106 is directly plated on the end surface of the Q-switched crystal 105 close to the gain medium.
In this embodiment, the pump light emitted from the pump source 101 passes through the coupling system 102, wherein the coupling system 102 is formed by one or more lenses, an antireflection film having an end surface coated with an antireflection film adapted to the wavelength of the pump light emitted from the pump source 101, and the pump light coupled by the coupling system 102 passes through the first cavity mirror 103, enters the gain medium 104, and is absorbed by the gain medium 104.
After the pump light is absorbed by the gain medium 104, the population of the gain medium 104 is inverted, the population is gathered to the upper level and generates laser radiation, the gain medium 104 and the Q-switched crystal 105 are optically glued together, the initial laser radiation is absorbed by the Q-switched crystal 105, when the Q-switched crystal 105 is absorbed to be saturated, the particles at the upper level of the gain medium 104 rapidly transit to the lower level, laser oscillation is formed in a laser cavity formed by the first cavity mirror 103 and the second cavity mirror 106, and finally pulse laser is output from the second cavity mirror 106.
Example 2
As shown in fig. 2, the utility model discloses a pumping source 201, coupled system 202, sapphire crystal window 203, first chamber mirror 204, gain medium 205, transfer Q crystal 206, second chamber mirror 207, sapphire crystal window 208 that set gradually. And antireflection films with corresponding wavelengths are plated on the end faces of the sapphire crystal window pieces 203 and 208. The sapphire window 203, the gain medium 205, the Q-switching crystal 206 and the sapphire window 208 are of an integral structure. The first cavity mirror 204 is plated at the end face of the gain medium 205, and the second cavity mirror is plated at the end face of the Q-switched crystal 206.
The laser structure of this embodiment is substantially similar to that described in embodiment 1, except that the sapphire crystal louvers 203, 208 serve to dissipate heat and are optically bonded to the gain medium 205 and the Q-switched crystal 206. Other structures and optical paths are the same as those described in embodiment 1, and are not described again.
The above embodiments are the embodiments of the present invention, and for those skilled in the art, according to the teaching of the present invention, the equivalent changes, modifications, replacements and variations made by the claims of the present invention should all belong to the scope of the present invention without departing from the principle and spirit of the present invention.
Claims (10)
1. High repetition frequency 1.5um human eye safe Q-switched microchip laser, its characterized in that: it includes that set gradually:
the pumping source is used for providing pumping light, and the pumping adopts a continuous pumping mode;
a coupling system for coupling pump light into the laser cavity;
a first cavity mirror;
the gain medium is used for generating required 1.5um laser radiation and is an Er/Yb: YAB crystal;
the Q-switched crystal is used for generating required Q-switched pulses and is cobalt-doped spinel;
a second cavity mirror;
a laser resonant cavity is formed between the first cavity mirror and the second cavity mirror and is used for forming oscillation output by 1.5um laser;
the gain medium and the Q-switched crystal are glued or optical cement are in an integral structure.
2. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the first cavity mirror is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror is plated with a partial reflection film corresponding to the working wavelength.
3. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the first cavity mirror is directly plated on the end face of the gain medium close to the gain medium, and the second cavity mirror is directly plated on the end face of the Q-switched crystal close to the Q-switched crystal.
4. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the wavelength of the pumping light of the pumping source is 900 nm-1100 nm.
5. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the pumping source is a semiconductor laser or a solid laser.
6. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the coupling system is composed of more than one lens, and an antireflection film which is adaptive to the wavelength of the pump light emitted by the pump source is plated on the end face of the lens.
7. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the front end face and the rear end face of a combined piece formed by gluing the gain medium and the Q-switched crystal into a whole are glued together through two sapphire crystals.
8. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the laser wavelength output by the laser resonant cavity can be the gain medium Er/Yb: the YAB crystal has an emission spectrum with any wavelength of 1500 nm-1600 nm.
9. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the gain medium is placed after the Q-switched crystal.
10. The high repetition frequency 1.5um human eye safe Q-switched microchip laser of claim 1, characterized in that: the gain medium is replaced by Er/Yb phosphate glass.
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| CN201922301907.2U CN211556411U (en) | 2019-12-19 | 2019-12-19 | High repetition frequency 1.5um human eye safety Q-switched microchip laser |
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| CN201922301907.2U CN211556411U (en) | 2019-12-19 | 2019-12-19 | High repetition frequency 1.5um human eye safety Q-switched microchip laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467508A (en) * | 2021-01-28 | 2021-03-09 | 四川光天下激光科技有限公司 | Narrow pulse width laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112467508A (en) * | 2021-01-28 | 2021-03-09 | 四川光天下激光科技有限公司 | Narrow pulse width laser |
| CN112467508B (en) * | 2021-01-28 | 2021-06-08 | 四川光天下激光科技有限公司 | Narrow pulse width laser |
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Address after: 350100 floor 5, building 19, phase II, innovation park, No. 7, middle wulongjiang Avenue, Shangjie Town, Minhou County, Fuzhou City, Fujian Province Patentee after: Fujian Haichuang Photoelectric Technology Co.,Ltd. Address before: 350005, 27th floor, Pioneer Building, Haixi hi tech Industrial Park, high tech Zone, Fuzhou City, Fujian Province Patentee before: FUJIAN HAICHUANG PHOTOELECTRIC CO.,LTD. |