CN210201153U - Medium-long wave infrared laser - Google Patents
Medium-long wave infrared laser Download PDFInfo
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- CN210201153U CN210201153U CN201921106943.7U CN201921106943U CN210201153U CN 210201153 U CN210201153 U CN 210201153U CN 201921106943 U CN201921106943 U CN 201921106943U CN 210201153 U CN210201153 U CN 210201153U
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Abstract
The utility model provides a medium-long wave infrared laser, the laser includes: the laser device comprises a pumping module, a first resonant cavity and a second resonant cavity, wherein the pumping module is used for exciting a first laser working substance to generate first laser with a set wavelength. The first resonant cavity is used for amplifying and outputting the first laser. The first laser enters the second resonant cavity and excites the second laser working substance, and medium wave laser and long wave laser are generated and output through nonlinear frequency conversion. According to the utility model discloses a medium and long wave infrared laser, through the first laser that the first laser work material of pumping module excitation produced and has the settlement wavelength, first laser can get into the second resonant cavity after being enlargied in first resonant cavity to the excitation second laser work material produces medium wave laser and long wave laser. The medium wave laser and the long wave laser can be amplified in the second resonant cavity and then output simultaneously, and the medium wave and long wave infrared laser is simple and compact in structure.
Description
Technical Field
The utility model relates to a laser technical field especially relates to a medium-long wave infrared laser.
Background
With the development of the infrared countermeasure technology, a focal plane detector of a medium-long wave composite wave band can be adopted to equip weapons so as to improve the weapon performance.
In the existing equipment, 1-2 μm laser is used as pump light, and after parametric oscillation is performed by an optical parametric oscillator provided with infrared nonlinear crystals such as phosphorus, germanium, zinc and the like, only any one of medium-wave laser and long-wave laser can be output at one time. When the medium-wavelength laser and the long-wavelength laser (medium-wavelength and long-wavelength composite wave band) are required to be output simultaneously, the two sets of equipment are required to be adopted, one set of equipment outputs the medium-wavelength laser, the other set of equipment outputs the long-wavelength laser, and the medium-wavelength and the long-wavelength lasers can be output simultaneously only after the medium-wavelength laser and the long-wavelength laser which are output by the two sets of equipment are combined by the beam combining mirror due to the fact that the medium-wavelength laser and the long-wavelength laser have different directivities. However, this results in a complicated and bulky laser structure.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is how to realize high efficiency, the stable output of medium-long wave infrared laser, provide a medium-long wave infrared laser.
According to the utility model discloses a medium-long wave infrared laser, include:
the pumping module is used for exciting the first laser working substance to generate first laser with set wavelength;
the first resonant cavity is used for amplifying and outputting the first laser, wherein the first laser working substance and the pumping module are both arranged in the first resonant cavity;
and a second resonant cavity, wherein a second laser working substance is arranged in the second resonant cavity, the first laser enters the second resonant cavity to excite the second laser working substance, and generates and outputs medium-wave laser and long-wave laser through nonlinear frequency conversion.
According to the utility model discloses a medium and long wave infrared laser instrument stimulates first laser work material through the pumping module in the first resonant cavity, can produce and have the first laser of setting for the wavelength, and the first laser that has the setting for wavelength can get into the second resonant cavity after being enlargied in the first resonant cavity to the second laser work material in the excitation second resonant cavity to can produce medium wave laser and long wave laser. The generated medium-wave laser and long-wave laser can be amplified in the second resonant cavity and then simultaneously output, so that the high-efficiency and stable output of the medium-wave and long-wave laser is realized, and the medium-wave and long-wave infrared laser is simple and compact in structure.
According to some embodiments of the invention, the first laser working substance is an erbium-doped yttrium scandium gallium garnet crystal with a doping concentration of 30%.
In some embodiments of the present invention, the first laser working substance is configured to be cylindrical, and the pumping module includes a plurality of groups of laser diode arrays uniformly spaced along a circumferential direction of the first laser working substance.
According to some embodiments of the invention, the pump module comprises three groups of laser diode arrays, each group of laser diode arrays being distributed along the circumferential direction of the first laser working substance at even intervals, the laser diode arrays comprising four laser diodes.
In some embodiments of the present invention, the upper and lower end surfaces of the first laser working substance are both configured as an arc surface recessed toward the inside of the column body, and the radius of the arc surface ranges from 500mm to 2000 mm.
According to some embodiments of the invention, the first resonant cavity comprises:
the first full-reflection mirror is provided with a first coating, and the reflectivity of the first coating to the first laser is not lower than 99.9%; and the combination of (a) and (b),
the first output mirror is provided with a second coating, and the transmittance of the second coating to the first laser is not lower than 10%.
In some embodiments of the present invention, the second laser working substance is a phosphorus germanium zinc crystal or a cadmium selenide crystal.
According to some embodiments of the invention, the second resonant cavity comprises:
the second total reflection mirror is provided with a third coating, the transmittance of the third coating to the first laser is not lower than 99.9%, and the reflectivity to the medium wave laser and the long wave laser is not lower than 99.9%;
and the second output mirror is provided with a fourth coating, the reflectivity of the fourth coating to the first laser is not lower than 99.9%, and the transmittances to the medium-wave laser and the long-wave laser are not lower than 50%.
In some embodiments of the present invention, a pulse switch is disposed in the first resonant cavity for adjusting the pulse of the first laser; and/or the presence of a gas in the gas,
the set wavelength is 2.79 μm, the wavelength range of the medium-wave laser is 3-5 μm, and the wavelength range of the long-wave laser is 8-12 μm.
According to some embodiments of the present invention, a focusing lens is disposed between the first resonant cavity and the second resonant cavity, for focusing the first laser to the second resonant cavity.
Drawings
Fig. 1 is a schematic structural diagram of a medium-long wave infrared laser according to an embodiment of the present invention;
fig. 2 is a flowchart of a method for outputting a long-wavelength infrared laser according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a mid-long wavelength infrared laser pumping module arrangement according to an embodiment of the present invention;
fig. 4 is a cross-sectional view shown in fig. 3.
Reference numerals:
the laser(s) 100 are (are),
the pump modules 10, the laser diodes 110,
the first laser working substance 20 is provided,
the first resonator 30, the first fully reflective mirror 310, the first output mirror 320,
a second resonator 40, a second fully reflective mirror 410, a second output mirror 420,
the second laser working substance 50 is provided,
the pulse switch (60) is set to be on,
a focusing lens 70.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.
According to the utility model discloses medium-long wave infrared laser 100, as shown in fig. 1, medium-long wave infrared laser 100 includes: a pumping module 10, a first resonant cavity 30 and a second resonant cavity 40.
In particular, as shown in fig. 1, the pump module 10 may be used to excite the first laser working substance 20 to generate the first laser light of the set wavelength. The first resonant cavity 30 may be configured to amplify and output the first laser light, wherein the first laser working substance 20 and the pumping module 10 are both disposed in the first resonant cavity 30.
It should be noted that, after absorbing the light energy emitted by the pumping module 10, the first laser working substance 20 may generate stimulated fluorescence radiation with multiple wavelengths, and under the action of the first resonant cavity 30, the first laser with the set wavelength is continuously amplified and output in the first resonant cavity 30, while the fluorescence with other wavelengths is suppressed and cannot generate laser oscillation, so that a first laser beam with a single wavelength and the same propagation direction, frequency and phase may be formed in the first resonant cavity 30 and output.
As shown in fig. 1, a second laser working substance 50 may be disposed in the second resonant cavity 40, and the first laser light emitted from the first resonant cavity 30 may enter the second resonant cavity 40 to excite the second laser working substance 50. The second laser working substance 50 generates and outputs a medium-wave laser beam and a long-wave laser beam by nonlinear frequency conversion under the excitation action of the first laser beam.
It should be noted that the second resonant cavity 40 may suppress laser light in other wavelength ranges than the medium-wave laser light and the long-wave laser light, and the medium-wave laser light and the long-wave laser light are simultaneously output after being reflected and amplified multiple times by the second resonant cavity 40.
According to the utility model discloses a medium-long wave infrared laser 100, through the pumping module 10 excitation first laser working substance 20 in the first resonant cavity 30, can produce and have the first laser of setting for the wavelength, the first laser that has the setting for wavelength can get into in the second resonant cavity 40 after being enlargied in the first resonant cavity 30 to second laser working substance 50 in the excitation second resonant cavity 40, thereby can produce medium wave laser and long wave laser. The generated medium-wave laser and long-wave laser can be amplified in the second resonant cavity 40 and then simultaneously output, so that the high-efficiency and stable output of the medium-wave and long-wave laser is realized, and the medium-wave and long-wave infrared laser 100 has a simple and compact structure.
According to some embodiments of the present invention, the first laser working substance 20 may be Er with a doping concentration of 30%: YSGG crystals (erbium yttrium scandium gallium doped garnet crystals). It should be noted that the pump module 10 may be a semiconductor pump module 10, and under the excitation action of the semiconductor pump module 10, the ratio of Er: the YSGG crystal may generate a first laser light with a set wavelength of 2.79 μm.
In some embodiments of the present invention, as shown in fig. 3 and 4, the first laser working substance 20 may be configured in a cylindrical shape, and the pumping module 10 includes a plurality of groups of laser diode arrays uniformly spaced along a circumferential direction of the first laser working substance 20. For example, when the first laser working substance 20 is Er: when YSGG is crystallized, Er: the YSGG crystal may be configured as a cylinder 3mm in diameter and 85mm in height. Wherein, Er: the doping concentration of the YSGG crystal is 30%, the length of the doping region is 55mm, and the two ends of the doping region are respectively provided with a non-doping region with the length of 15 mm.
According to some embodiments of the present invention, as shown in fig. 3 and 4, the pumping module 10 may include three groups of laser diode arrays distributed at even intervals along the circumferential direction of the first laser working substance 20, each group of laser diode arrays including four laser diodes 110. It should be noted that the pumping module 10 may include a pumping frame, a laser diode array, and a diffuse reflection wall, and the laser diode array and the diffuse reflection wall may be disposed on the pumping frame.
As shown in fig. 3 and 4, a single array of pulsed laser diodes 110(QGL-1200W) with power of 300W and output wavelength of 970 may be used as the pumping unit. The 12 pumping units are divided into three rows, each row comprises four pulsed laser diodes 110, and the four laser diodes 110 of each row are distributed at intervals along the length direction of the first laser working substance 20, so that three groups of laser diode arrays are formed. The three groups of laser diode arrays are uniformly distributed at intervals along the circumferential direction of the first laser working substance 20, the three groups of laser diode arrays can provide light pulses with power of 3600W, light emitted by the laser diode arrays is partially directly coupled into the first laser working substance 20, and light which is not directly absorbed by the first laser working substance 20 is finally coupled into the first laser working substance 20 after being reflected by the diffuse reflection wall so as to excite the first laser working substance 20 to emit first laser.
In some embodiments of the present invention, the upper and lower end surfaces of the first laser working substance 20 can be both configured as an arc surface recessed toward the inside of the cylinder, and the radius of the arc surface ranges from 500mm to 2000 mm. For example, the radius of the circular arc surface may be 500 mm. The "upper and lower end faces of the first laser working substance 20" described herein may be understood as end faces at both ends in the axial direction of the first laser working substance 20. The end faces of the undoped regions at the two ends of the first laser working substance 20 can be set as concave arc faces with the radius of 500 mm-2000 mm, so that the thermal lens effect can be compensated, and the stability of the first laser propagation is improved.
As shown in fig. 1, according to some embodiments of the present invention, the first resonant cavity 30 may include: a first fully reflective mirror 310 and a first output mirror 320. The first resonant cavity 30 may be a symmetrical flat cavity, the first fully-reflecting mirror 310 and the first output mirror 320 may be made of calcium fluoride crystal material with good thermal conductivity, and the first fully-reflecting mirror 310 and the first output mirror 320 may be configured as plane mirrors with a diameter of 50mm and a thickness of 5 mm.
The first all-reflecting mirror 310 is provided with a first coating film, and the reflectivity of the first coating film to the first laser is not lower than 99.9%. Therefore, when the pump module 10 excites the first laser working substance 20 to generate the first laser light, the first laser light may be reflected back to the first laser working substance 20 when propagating to the first all-mirror 310, so that optical energy feedback may be provided, and the first laser light may be amplified. For example, when the first laser is set to have a wavelength of 2.79 μm, the first coating film has a reflectance R of the first laser2.79μm≥99.9％。
It should be noted that, as shown in fig. 1, the first half mirror 310 may be fixed to a two-dimensional optical adjustment frame to facilitate adjusting the position of the first half mirror 310.
The first output mirror 320 is provided with a second coating film, and the transmittance of the second coating film to the first laser light is not lower than 10%. For example, the second plating film may have a transmittance of 30% for the first laser light. Thus, after emitting the amplified first laser light, a part of the amplified first laser light can be output from the first cavity 30 through the first output mirror 320. For example, when the first laser beam has a set wavelength of 2.79 μm, the second plating film has a transmittance T to the first laser beam2.79μm≥10％。
It should be noted that the first output mirror 320 may be a planar coupling output mirror, and as shown in fig. 1, the first output mirror 320 may be fixed to a two-dimensional optical adjustment frame to adjust the position of the first output mirror 320.
In some embodiments of the present invention, the second laser working substance 50 may be a nonlinear crystal, and the second laser working substance 50 may be a ZGP crystal (phosphorus germanium zinc crystal) or a CdSe crystal (cadmium selenide crystal) having a rectangular parallelepiped shape with a width and a height of 6mm and a length of 30 mm. It should be noted that when the first laser having a set wavelength, for example, a laser having a wavelength of 2.79 μm may pump the ZGP crystal or the CdSe crystal to generate a medium-wavelength laser having a wavelength range of 3 to 5 μm and a long-wavelength laser having a wavelength range of 8 to 10 μm, so that the medium-wavelength laser and the long-wavelength laser may be formed and output.
According to some embodiments of the present invention, as shown in fig. 1, the second resonant cavity 40 includes: a second fully reflective mirror 410 and a second output mirror 420. The second resonant cavity 40 may be a symmetrical flat cavity, the second fully reflective mirror 410 and the second output mirror 420 may both be made of zinc sulfide crystal, and the first fully reflective mirror 310 and the first output mirror 320 may both be flat mirrors.
The second total reflection mirror 410 is provided with a third coating, the transmittance of the third coating to the first laser is not lower than 99.9%, and the reflectivities to the medium wave laser and the long wave laser are not lower than 99.9%. Thus, the first laser light can enter the second resonant cavity 40 through the second fully reflective mirror 410 to pump the second laser working substance 50, so that the second laser working substance 50 generates the medium-wave laser light and the long-wave laser light. Also, the medium and long laser lights may be reflected to the second laser working substance 50 while being propagated to the second all-mirror 410 to provide optical energy feedback, so that the medium and long laser lights are amplified.
For example, when the first laser is a first laser with a set wavelength of 2.79 μm, the wavelength range of the medium-wave laser is 3-5 μm, and the wavelength range of the long-wave laser is 8-10 μm, the third coating film has a transmittance T to the first laser2.79μmNot less than 99.9%, and reflectivity R of medium wave laser with wavelength range of 3-5 μm3-5μmNot less than 99.9%, and reflectivity R to long-wave laser with wavelength of 8-10 μm8-10μm≥99.9％。
It should be noted that, as shown in fig. 1, the second half mirror 410 may be fixed to a two-dimensional optical adjustment frame to facilitate adjusting the position of the second half mirror 410.
The second output mirror 420 is provided with a fourth coating film, the reflectivity of the fourth coating film to the first laser is not lower than 99.9%, and the transmittances of the fourth coating film to the medium-wave laser and the long-wave laser are not lower than 50%. Thus, when the first laser light propagates to the second output mirror 420, it may be reflected onto the second laser working substance 50 to pump the second laser working substance 50 to generate the medium-wave laser light and the long-wave laser light, and when the medium-wave laser light and the long-wave laser light propagate to the second output mirror 420, a portion of the medium-wave laser light and the long-wave laser light may simultaneously pass through the second output mirror 420. Therefore, the function of simultaneously emitting medium-long wave laser is realized.
For example, when the first laser is a first laser with a set wavelength of 2.79 μm, the wavelength range of the medium-wave laser is 3-5 μm, and the wavelength range of the long-wave laser is 8-10 μm, the fourth coating film has a reflectivity R to the first laser2.79μmNot less than 99.9%, and has a transmittance T for medium wave laser light with a wavelength of 3-5 μm3-5μmGreater than or equal to 50%, and transmittance R to long-wave laser with wavelength of 8-10 μm8-10μm≥50％。
It should be noted that the second output mirror 420 may be a flat mirror, and as shown in fig. 1, the second output mirror 420 may be fixed to a two-dimensional optical adjustment frame to adjust the position of the second output mirror 420.
As shown in fig. 1, a focusing lens 70 may be disposed between the first resonant cavity 30 and the second resonant cavity 40 to focus the first laser light emitted from the first resonant cavity 30 and transfer the first laser light into the second resonant cavity 40. The focusing lens 70 may be provided with a coating film having a transmittance of not less than 99.9% for the first laser light. For example, when the first laser beam has a set wavelength of 2.79 μm, the transmittance T of the coating film of the focusing lens 70 with respect to the first laser beam2.79μmNot less than 99.9 percent. The first laser working substance 20 may be provided with a transmittance T for the first laser beam2.79μmAn anti-reflection film layer of more than or equal to 99.9 percent. This can prevent the first laser working substance 20 from self-oscillating at a wavelength of 2.79 μm between the upper and lower end faces. In order to improve the damage resistance of the anti-reflection film layer on the end face of the first laser working substance 20, the first laser working substance 20 may adopt an Er: YSGG bonds crystals to reduce Er: the YSGG crystal end absorbs a portion of the oscillating light in the first resonant cavity 30, thereby alleviating the problem of temperature rise of the end due to heat absorption and keeping the temperature of the anti-reflection film layer at a low temperature.
It should be noted that the first laser working substance 20 absorbs the light energy emitted by the pumping module 10 to generate stimulated fluorescence radiation with multiple wavelengths, and under the combined action of the anti-reflection film layer on the end face of the first laser working substance 20, the first full-reflection mirror 310 and the first output mirror 320, the first laser with the wavelength of 2.79 μm is continuously amplified and output in the first resonant cavity 30, while the fluorescence with other wavelengths is suppressed and cannot generate laser oscillation, so that the laser output by the first resonant cavity 30 only contains light with a single wavelength of 2.19 μm.
In some embodiments of the present invention, a pulse switch 60 may be disposed within the first cavity 30 for adjusting the pulse of the first laser. As shown in fig. 1, a pulse switch 60 is disposed within the first resonator 30, the pulse switch 60 being located between the first laser working substance 20 and the first output mirror 320. For example, the pulse switch 60 may be a Q-switched crystal. Thus, the pulse of the first laser light can be adjusted by the Q-switching crystal.
According to some embodiments of the present invention, the set wavelength may be 2.79 μm, the wavelength range of the medium-wave laser light is 3-5 μm, and the wavelength range of the long-wave laser light is 8-12 μm. That is, when the pumping module 10 excites the first laser working substance 20, the first laser light with a wavelength of 2.79 μm can be generated, and the first laser light is amplified in the first resonant cavity 30 and then outputted, and propagates into the second resonant cavity 40. The first laser pumps the second laser working substance 50 and generates a medium-wave laser having a wavelength range of 3-5 μm and a long-wave laser having a wavelength range of 8-12 μm. The medium-wave laser light and the long-wave laser light are amplified in the second resonant cavity 40 and then output.
As shown in fig. 2, the method for outputting the long-wavelength infrared laser according to the present invention comprises:
s101: first laser light with a set wavelength is generated and output. As shown in fig. 1, the pump module 10 can excite the first laser working substance 20 to generate the first laser light with the predetermined wavelength of 2.79 um.
S102: the second laser working substance 50 is excited with the first laser light to generate a medium-wave laser light and a long-wave laser light. As shown in FIG. 1, the first laser enters the second resonant cavity 40 and excites the second laser working substance 50 to produce a medium-wavelength laser in the wavelength range of 3-5 μm and a long-wavelength laser in the wavelength range of 8-12 μm.
S103: and simultaneously outputting medium wave laser and long wave laser. As shown in FIG. 1, a medium-wavelength laser light having a wavelength ranging from 3 to 5 μm and a long-wavelength laser light having a wavelength ranging from 8 to 12 μm are amplified in the second resonant cavity 40 and then output from the second output mirror 420.
According to the utility model discloses a medium-long wave infrared laser output method adopts the first laser of the first laser working substance 20 production predetermined wavelength of pumping module 10 pumping, utilizes first laser can pump second laser working substance 50 in order to produce medium wave laser and long wave laser to can realize the simultaneous output of medium-long wave laser, easy operation, operation are reliable.
It should be noted that, adopt the utility model discloses on the output method of medium-long wave infrared laser 100 and medium-long wave infrared laser can be applied to military weapons, medium-long wave infrared laser 100 can conveniently, high-efficiently realize medium-long wave laser and export when of bore, has expanded laser system's interference wave band, consequently, has expanded laser 100's interference ability. Furthermore, the utility model discloses a directive property of two bundles of light of laser instrument 100's medium and long wave laser is unanimous, and the light-emitting position is unanimous, can reduce the optical lens that medium wave laser and two way optical beam of long wave laser adopted to can dwindle laser instrument 100's light path volume greatly, make laser instrument 100's structure compacter. Moreover, the signal light and the strobe light generated in the optical parametric oscillation process respectively correspond to the medium-wave laser and the long-wave laser, and compared with a laser which can only extract one useful wavelength in the related art, the laser loss is reduced, so that the optical-optical conversion efficiency of the laser 100 is improved, and the performance of the laser 100 is effectively improved.
The technical means and functions of the present invention to achieve the intended purpose will be understood more deeply and concretely through the description of the embodiments, however, the attached drawings are only for reference and illustration, and are not intended to limit the present invention.
Claims (10)
1. A medium-long wavelength infrared laser, comprising:
the pumping module is used for exciting the first laser working substance to generate first laser with set wavelength;
the first resonant cavity is used for amplifying and outputting the first laser, wherein the first laser working substance and the pumping module are both arranged in the first resonant cavity;
and a second resonant cavity, wherein a second laser working substance is arranged in the second resonant cavity, the first laser enters the second resonant cavity to excite the second laser working substance, and generates and outputs medium-wave laser and long-wave laser through nonlinear frequency conversion.
2. The midwave infrared laser as set forth in claim 1, wherein the first laser working substance is an erbium-doped yttrium scandium gallium garnet crystal doped with 30% of a dopant concentration.
3. The midwave infrared laser as claimed in claim 1, wherein the first laser working substance is configured in a cylindrical shape, and the pumping module includes a plurality of groups of laser diode arrays uniformly spaced along a circumferential direction of the first laser working substance.
4. The midwave infrared laser as claimed in claim 3 wherein the pumping module comprises three groups of laser diode arrays evenly spaced along the circumferential direction of the first laser working substance, each group of laser diode arrays comprising four laser diodes.
5. The midwave infrared laser as claimed in claim 3, wherein the upper and lower end faces of the first laser working substance are each configured as a circular arc surface recessed toward the inside of the cylinder, and the radius of the circular arc surface ranges from 500mm to 2000 mm.
6. The midwave infrared laser as set forth in claim 1, wherein the first resonant cavity comprises:
the first full-reflection mirror is provided with a first coating, and the reflectivity of the first coating to the first laser is not lower than 99.9%; and the combination of (a) and (b),
the first output mirror is provided with a second coating, and the transmittance of the second coating to the first laser is not lower than 10%.
7. The mid-wavelength infrared laser of claim 1, wherein the second laser working substance is a zinc germanium phosphorus crystal or a cadmium selenide crystal.
8. The midwave infrared laser as set forth in claim 1, wherein the second resonant cavity comprises:
the second total reflection mirror is provided with a third coating, the transmittance of the third coating to the first laser is not lower than 99.9%, and the reflectivity to the medium wave laser and the long wave laser is not lower than 99.9%;
and the second output mirror is provided with a fourth coating, the reflectivity of the fourth coating to the first laser is not lower than 99.9%, and the transmittances to the medium-wave laser and the long-wave laser are not lower than 50%.
9. The midwave infrared laser as claimed in claim 1, wherein a pulse switch is provided in the first cavity for modulating the pulse of the first laser light; and/or the presence of a gas in the gas,
the set wavelength is 2.79 μm, the wavelength range of the medium-wave laser is 3-5 μm, and the wavelength range of the long-wave laser is 8-12 μm.
10. The midwave infrared laser as claimed in any of claims 1-9, wherein a focusing lens is provided between the first resonant cavity and the second resonant cavity for focusing the first laser light to the second resonant cavity.
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| CN110416870A (en) * | 2019-07-15 | 2019-11-05 | 中国电子科技集团公司第十一研究所 | Middle LONG WAVE INFRARED laser and middle LONG WAVE INFRARED laser output method |
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| CN110416870A (en) * | 2019-07-15 | 2019-11-05 | 中国电子科技集团公司第十一研究所 | Middle LONG WAVE INFRARED laser and middle LONG WAVE INFRARED laser output method |
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