CN210201150U - Laser device - Google Patents
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- CN210201150U CN210201150U CN201921107049.1U CN201921107049U CN210201150U CN 210201150 U CN210201150 U CN 210201150U CN 201921107049 U CN201921107049 U CN 201921107049U CN 210201150 U CN210201150 U CN 210201150U
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Abstract
The utility model provides a laser instrument, laser instrument includes: the laser comprises a laser working substance, a semiconductor pumping module, a pulse switch and a resonant cavity, wherein the laser working substance is an erbium-doped yttrium scandium gallium garnet crystal, the semiconductor pumping module emits excitation light with the wavelength of 970nm, and the semiconductor pumping module excites the laser working substance along the length direction vertical to the laser working substance to generate preset laser. The pulse switch is used for adjusting the pulse of predetermineeing laser, and the resonant cavity is used for enlargiing and exporting predetermineeing laser, according to the utility model discloses a laser instrument through the exciting light of semiconductor pump module transmission laser working substance absorption peak, has reduced the used heat that the pumping in-process produced, has effectively avoided because of the resonant cavity leads to the problem of mistuning because of thermal lens effect is serious, has improved pumping frequency and pumping efficiency. And moreover, the preset laser is adjusted by adopting the pulse switch, so that the preset laser with high repetition frequency, narrow pulse width and high peak value can be generated, and the working performance of the laser is effectively improved.
Description
Technical Field
The utility model relates to a laser technical field especially relates to a laser instrument.
Background
Er: the wavelength of output laser of the YSGG crystal (erbium-doped yttrium scandium gallium garnet crystal) is in a 2.79 micron wave band, is commonly called water laser, and has important functions in the medical field and the infrared countermeasure field.
In the related art, the method for obtaining the laser with the wavelength of 2.79 microns mainly adopts a xenon lamp pumping Er: the frequency of output laser of the YSGG laser crystal is mostly tens of hertz, and the pulse width of the laser is also in the order of tens to hundreds of microseconds.
The technical scheme has the following defects: because of the wide spectrum of xenon lamps, Er: the YSGG laser crystal has a narrow absorption band, so that serious thermal effect is caused, and further improvement of laser output indexes is greatly influenced.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is to reduce the fuel factor of laser instrument, the utility model provides a laser instrument.
According to the utility model discloses laser instrument, include:
the laser working substance is an erbium-doped yttrium scandium gallium garnet crystal;
the semiconductor pumping module emits excitation light with the wavelength of 970nm, and excites the laser working substance along the length direction perpendicular to the laser working substance so as to generate preset laser;
the pulse switch is used for adjusting the pulse of the preset laser;
and the resonant cavity is used for amplifying and outputting the preset laser, wherein the laser working substance, the semiconductor pumping module and the pulse switch are all arranged in the resonant cavity.
According to the utility model discloses laser instrument can launch the excitation light that is in the wavelength of laser work material absorption peak for 970nm through semiconductor pump module to can reduce the spectral band of the excitation light of semiconductor pump module transmission, thereby effectively reduce the used heat that produces at the pumping in-process of laser instrument, effectively avoided because of the resonant cavity leads to the problem of detuning because of thermal lens effect is serious, improved pumping frequency and pumping efficiency. And the pulse switch can be adopted to adjust the pulse of the preset laser, so that the preset laser with high repetition frequency, narrow pulse width and high peak value can be generated, and the working performance of the laser is effectively improved.
According to some embodiments of the invention, the laser working substance is an erbium-doped yttrium scandium gallium garnet crystal with a doping concentration of 30%.
In some embodiments of the present invention, the laser working substance includes a doped region and two undoped regions, two of the undoped regions are respectively located at two ends of the length direction of the laser working substance, and the doped region is located between the two undoped regions.
According to some embodiments of the present invention, the value range of the length of the doped region is 53mm to 57mm, and the value range of the length of the undoped region is 13mm to 17 mm.
In some embodiments of the present invention, the laser working substance is configured to be cylindrical, and the semiconductor pumping module includes a plurality of groups of laser diode arrays uniformly spaced along a circumferential direction of the laser working substance.
According to some embodiments of the invention, the semiconductor pumping module comprises three groups of laser diode arrays, each group of laser diode arrays being distributed at even intervals in the circumferential direction of the laser working substance, the laser diode arrays comprising four laser diodes.
In some embodiments of the present invention, the upper and lower end surfaces of the laser working substance are both configured as circular arc surfaces recessed toward the inside of the column.
According to some embodiments of the invention, the resonant cavity comprises:
the full-reflection mirror is provided with a first coating, and the reflectivity of the first coating to the preset laser is not lower than 99.9%; and the combination of (a) and (b),
the output mirror is provided with a second coating, and the transmittance of the second coating to the preset laser is not lower than 10%.
In some embodiments of the present invention, the predetermined laser light has a wavelength of 2.79 μm when outputted through the resonant cavity.
According to some embodiments of the invention, the pulse switch is a tellurium dioxide acousto-optic crystal.
Drawings
Fig. 1 is a schematic structural diagram of a medium-long wave infrared laser according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an arrangement of semiconductor pumping modules of a laser according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view of the device shown in FIG. 2;
fig. 4 is a schematic layout diagram of doped and undoped regions of a laser working substance according to an embodiment of the present invention.
Reference numerals:
the laser(s) 100 are (are),
the semiconductor pump module 10, the laser diode 110,
the laser working substance 20, the doped region 210, the undoped region 220,
a pulse switch 60.
Detailed Description
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments.
As shown in fig. 1, a laser 100 according to an embodiment of the present invention includes: laser working substance 20, semiconductor pump module 10, pulse switch 60 and resonant cavity 30.
Specifically, as shown in fig. 1, the laser working substance 20, the semiconductor pump module 10, and the pulse switch 60 are disposed in the resonant cavity 30. The laser working substance 20 is Er: YSGG crystals (erbium yttrium scandium gallium doped garnet crystals). The semiconductor pump module 10 may emit excitation light having a wavelength of 970nm, and the semiconductor pump module 10 excites the laser working substance 20 in a direction perpendicular to a length direction of the laser working substance 20 to generate a preset laser of a set wavelength.
It should be noted that, as shown in fig. 1 and 2, the longitudinal direction of the laser working substance 20 may be understood as a horizontal direction in fig. 1 and 2, and a direction perpendicular to the longitudinal direction of the laser working substance 20 may be understood as a vertical direction in fig. 1 and 2. For example, when the laser working substance 20 has a cylindrical shape, the height of the cylindrical shape is the longitudinal direction of the laser working substance 20, and the radial direction of the cylindrical shape is a direction perpendicular to the longitudinal direction of the laser working substance 20.
Er: the wavelength of the absorption peak of the YSGG crystal is near 970nm, and when the semiconductor pump module 10 emits excitation light with a wavelength of 970nm along a direction perpendicular to the length direction of the laser working substance 20, the laser working substance 20 can generate preset laser including excited fluorescent radiation with multiple wavelengths after absorbing light energy emitted by the semiconductor pump module 10.
The resonator 30 may be used to amplify and output a predetermined laser light. It should be noted that, under the action of the resonant cavity 30, the preset laser beam with the set wavelength is continuously amplified and output, while the fluorescence with other wavelengths is suppressed and cannot generate laser oscillation, so that a single-wavelength preset laser beam with the same propagation direction, frequency and phase can be formed in the resonant cavity 30 and output. The pulse switch 60 can be used to adjust the pulse of the preset laser to perform adjustment control on the pulse of the preset laser.
According to the utility model discloses laser 100, can launch the excitation light that is in the wavelength that laser work material 20 absorbed the peak through semiconductor pump module 10 and is 970nm to can reduce the spectral band of the excitation light of semiconductor pump module 10 transmission, thereby effectively reduce the used heat that produces at the pumping in-process of laser 100, effectively avoided because of resonant cavity 30 leads to the problem of detuning because of thermal lens effect is serious, improved pumping frequency and pumping efficiency. Moreover, the pulse of the preset laser can be adjusted by using the pulse switch 60, so that the preset laser with high repetition frequency, narrow pulse width and high peak value can be generated, and the working performance of the laser 100 is effectively improved.
According to some embodiments of the present invention, the laser working substance 20 may be an erbium-doped yttrium scandium gallium garnet crystal with a doping concentration of 30%. Experiments prove that when the laser working substance 20 adopts the erbium-doped yttrium scandium gallium garnet crystal with the doping concentration of 30%, the utilization rate of the laser working substance 20 to the excitation light is favorably improved, and therefore the output effect of the preset laser can be improved.
In some embodiments of the present invention, as shown in fig. 4, the laser working substance 20 may include a doped region 210 and two undoped regions 220.
As shown in fig. 4, the two undoped regions 220 are respectively located at two ends of the laser working substance 20 in the length direction, and the doped region 210 is located between the two undoped regions 220.
Further, the length of the doped region 210 ranges from 53mm to 57mm, for example, the length of the doped region 210 may be 55 mm. The length of each undoped region 220 may range from 13mm to 17mm, for example, the length of each undoped region 220 may be 15 mm.
Experiments prove that the layout design of the doped region 210 and the undoped region 220 with the sizes and the distribution is beneficial to improving the effect that the laser working substance 20 absorbs the excitation light to generate the preset laser, so that the working performance of the laser 100 is improved.
In some embodiments of the present invention, as shown in fig. 2-4, the laser working substance 20 is configured as a cylinder, and the semiconductor pumping module 10 includes a plurality of groups of laser diodes 110 that are uniformly spaced along the circumferential direction of the laser working substance 20. That is, Er: the YSGG crystal may be configured in a cylindrical shape, for example, Er: the YSGG crystal may be configured as a cylinder 3mm in diameter and 85mm in height. Wherein, Er: the doping concentration of the YSGG crystal is 30%, the length of the doped region 210 is 55mm, and the two ends of the doped region 210 are respectively provided with a non-doped region 220 with the length of 15 mm. The semiconductor pump module 10 is along Er: the YSGG crystals are uniformly distributed at intervals in the circumferential direction, so that the ratio of Er: the YSGG crystal was side pumped to generate a preset laser with a wavelength of 2.79 μm.
According to some embodiments of the present invention, as shown in fig. 2 and 3, the semiconductor pumping module 10 may operate along Er: the YSGG crystals are uniformly distributed at intervals in the circumferential direction, so that the ratio of Er: the YSGG crystal is side pumped to generate a predetermined laser. As shown in fig. 2 and 3, the semiconductor pumping module 10 may include three groups of laser diode arrays, each group including four laser diodes 110, uniformly spaced in the circumferential direction of the laser working substance 20.
It should be noted that the semiconductor pump module 10 may include a pump frame, a laser diode array, and a diffuse reflection wall, and the laser diode array and the diffuse reflection wall may be disposed on the pump frame.
As shown in fig. 2 and 3, a single pulsed laser diode (QGL-1200W) array with a power of 300W and an output wavelength of 970W may be used as the pumping unit. The 12 pumping units are divided into three rows, each row comprises four pulse laser diodes 110, and the four laser diodes 110 of each row are distributed at intervals along the length direction of the laser working substance 20, so that three groups of laser diode arrays are formed. The three groups of laser diode arrays are uniformly distributed at intervals along the circumferential direction of the laser working substance 20, the three groups of laser diode arrays can provide light pulses with power of 3600W, light emitted by the laser diode arrays is partially directly coupled into the laser working substance 20, and light which is not directly absorbed by the laser working substance 20 is finally coupled into the laser working substance 20 after being reflected by the diffuse reflection wall so as to stimulate the laser working substance 20 to emit preset laser.
In some embodiments of the present invention, the upper and lower end faces of the laser working substance 20 can be both configured as an arc surface recessed toward the inside of the column, and the radius of the arc surface ranges from 500mm to 2000 mm. The "upper and lower end faces of the laser workpiece 20" described herein may be understood as end faces at both axial ends of the laser workpiece 20. The end faces of the undoped regions 220 at both ends of the laser working substance 20 may be set as concave arc faces having a radius of 500mm to 2000mm, so that the thermal lens effect may be compensated and the stability of laser propagation may be improved.
As shown in fig. 1, according to some embodiments of the present invention, resonant cavity 30 includes: a total reflection mirror 310 and an output mirror 320.
The resonant cavity 30 may be a symmetrical flat cavity, the total reflection mirror 310 and the output mirror 320 may be made of calcium fluoride crystal material with good thermal conductivity, and the total reflection mirror 310 and the output mirror 320 may be plane mirrors with a diameter of 50mm and a thickness of 5 mm.
The total reflection mirror 310 is provided with a first coating film, and the reflectivity of the first coating film to the preset laser is not lower than 99.9%. Therefore, when the semiconductor pump module 10 excites the laser working substance 20 to generate the predetermined laser, the predetermined laser may be reflected back to the laser working substance 20 when propagating to the all-mirror 310, so that optical energy feedback may be provided to amplify the predetermined laser. For example, when the preset laser is a preset laser with a set wavelength of 2.79 μm, the reflectivity R of the first coating film to the preset laser2.79μm≥99.9％。
It should be noted that the holophote 310 may be fixed to a two-dimensional optical adjustment frame, as shown in fig. 1, to facilitate adjustment of the position of the holophote 310.
The output mirror 320 is provided with a second coating film, and the transmittance of the second coating film to the preset laser is not lower than 10%. For example, the second plating film may have a transmittance of 30% to a predetermined laser. Thus, after emitting the amplified predetermined laser light, a portion of the amplified predetermined laser light can be output from the cavity 30 through the output mirror 320. For example, when the laser is a predetermined laser with a predetermined wavelength of 2.79 μm, the transmittance T2.79 μm of the second plating film to the predetermined laser is 10% or more.
In order to increase Er: the anti damage ability of YSGG crystal terminal surface rete can adopt the bonded crystal, reduces Er: the end face part of the YSGG crystal absorbs oscillation light in the cavity, so that the temperature rise of the end face caused by heat absorption is reduced, and the film substrate is kept at a lower temperature.
In some embodiments of the present invention, the wavelength at which the laser light is output from the cavity 30 is predetermined to be 2.79 μm. In addition, Er: the wavelength of the absorption peak of the YSGG crystal is near 970nm, when the semiconductor pump module 10 emits excitation light with a wavelength of 970nm along a direction perpendicular to the length direction of the laser working substance 20, the laser working substance 20 can generate preset laser including excited fluorescent radiation with multiple wavelengths after absorbing light energy emitted by the semiconductor pump module 10, the preset laser with the wavelength of 2.79 μm is continuously amplified and output in the resonant cavity 30, while fluorescence with other wavelengths is inhibited from generating laser oscillation, so that the preset laser with the same propagation direction, frequency and phase can be output from the resonant cavity 30.
According to some embodiments of the present invention, the pulse switch 60 may be a Q-switched crystal, for example, the pulse switch 60 may be a tellurium dioxide acousto-optic crystal. The two ends of the tellurium dioxide crystal can be subjected to film coating treatment, so that the transmittance of the 2.79 mu m laser is improved to more than 99%. As shown in fig. 1, a pulse switch 60 is disposed in the resonator 30, and the pulse switch 60 is disposed between the predetermined laser working substance 20 and the output mirror 320. That is, laser 100 incorporates only one acousto-optic crystal within cavity 30, which significantly reduces the insertion loss of the laser relative to other Q-switches. Moreover, the pulse of the preset laser can be adjusted by the pulse switch 60, so that the laser 100 outputs the laser with high repetition frequency and high peak power, and the performance of the laser 100 is effectively improved.
It should be noted that, adopt the xenon lamp pumping mode among the correlation technique, the laser repetition frequency that the 2.79 um laser instrument of providing launches is lower, and laser pulse width is in the microsecond magnitude, and peak power is lower, can't become the effective pump source of medium-long wave infrared laser, according to the utility model discloses a laser 100 passes through semiconductor pump module 10 side pump laser working substance 20 and adopts the reputation Q switch of verifying, can improve the frequency of output laser to being greater than 500Hz from the state that is less than 50Hz, has realized that the wavelength of the high peak power that the pulsewidth is less than 70ns is 2.79 um and has predetermined the output of laser, can provide effective pump source for medium-long wave infrared laser.
The technical means and functions of the present invention to achieve the intended purpose will be understood more deeply and concretely through the description of the embodiments, however, the attached drawings are only for reference and illustration, and are not intended to limit the present invention.
Claims (10)
1. A laser, comprising:
the laser working substance is an erbium-doped yttrium scandium gallium garnet crystal;
the semiconductor pumping module emits excitation light with the wavelength of 970nm, and excites the laser working substance along the length direction perpendicular to the laser working substance so as to generate preset laser;
the pulse switch is used for adjusting the pulse of the preset laser;
and the resonant cavity is used for amplifying and outputting the preset laser, wherein the laser working substance, the semiconductor pumping module and the pulse switch are all arranged in the resonant cavity.
2. The laser of claim 1, wherein the lasing substance is an erbium-doped yttrium scandium gallium garnet crystal doped with a concentration of 30%.
3. The laser as claimed in claim 2, wherein the laser working substance comprises a doped region and two undoped regions, the two undoped regions are respectively located at two ends of the laser working substance in the length direction, and the doped region is located between the two undoped regions.
4. The laser of claim 3, wherein the length of the doped regions ranges from 53mm to 57mm, and the length of each of the undoped regions ranges from 13mm to 17 mm.
5. The laser of claim 1, wherein the laser working substance is configured in a cylindrical shape, and the semiconductor pumping module comprises a plurality of groups of laser diode arrays uniformly spaced along a circumferential direction of the laser working substance.
6. The laser of claim 4, wherein the semiconductor pumping module comprises three groups of laser diode arrays evenly spaced along a circumferential direction of the laser working substance, each group of the laser diode arrays comprising four laser diodes.
7. The laser of claim 4, wherein the upper and lower end faces of the laser working substance are each configured as a circular arc surface recessed toward the inside of the cylinder.
8. The laser of claim 1, wherein the resonant cavity comprises:
the full-reflection mirror is provided with a first coating, and the reflectivity of the first coating to the preset laser is not lower than 99.9%; and the combination of (a) and (b),
the output mirror is provided with a second coating, and the transmittance of the second coating to the preset laser is not lower than 10%.
9. The laser of claim 1, wherein the predetermined laser light has a wavelength of 2.79 μm when outputted from the cavity.
10. The laser of claim 1, wherein the pulse switch is a tellurium dioxide acousto-optic crystal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201921107049.1U CN210201150U (en) | 2019-07-15 | 2019-07-15 | Laser device |
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| CN201921107049.1U CN210201150U (en) | 2019-07-15 | 2019-07-15 | Laser device |
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| CN210201150U true CN210201150U (en) | 2020-03-27 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110401094A (en) * | 2019-07-15 | 2019-11-01 | 中国电子科技集团公司第十一研究所 | Laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110401094A (en) * | 2019-07-15 | 2019-11-01 | 中国电子科技集团公司第十一研究所 | Laser |
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