CN102969648A - High-power intermediate infrared laser device based on intra-cavity frequency conversion - Google Patents
High-power intermediate infrared laser device based on intra-cavity frequency conversion Download PDFInfo
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- CN102969648A CN102969648A CN2012105309898A CN201210530989A CN102969648A CN 102969648 A CN102969648 A CN 102969648A CN 2012105309898 A CN2012105309898 A CN 2012105309898A CN 201210530989 A CN201210530989 A CN 201210530989A CN 102969648 A CN102969648 A CN 102969648A
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Abstract
The invention discloses a high-power intermediate infrared laser device based on intra-cavity frequency conversion. The high-power intermediate infrared laser device is characterized by comprising a semiconductor laser pumping module, an optical coupling system, a base frequency laser crystal, an intermediate infrared laser reflection mirror and an intermediate infrared nonlinear crystal which are sequentially arranged along a laser transmission direction, a laser resonance cavity for forming base frequency laser beams of high laser beams by laser emitted from the base frequency laser crystal, and a modulation device for modulating the base frequency laser beams of the high laser beams. The high-power intermediate infrared laser device has the advantages that the structure is compact and the stability is high; a process of converting laser with the wavelength of 1,064 nm into laser with the wavelength of 3.8 microns of the high-power intermediate infrared laser device is finished in a cavity instead of being finished outside the cavity; and by virtue of high-power density of the laser with the wavelength of 1,064nm in the cavity, the wavelength conversion efficiency is greatly improved, and therefore, the output of the intermediate infrared laser with high conversion power can be implemented.
Description
Technical field
The invention belongs to the optical, mechanical and electronic integration field, be specifically related to a kind of high-power middle infrared laser based on frequency translation in the chamber.
Background technology
End-pumped laser is simple because of its device, the basic frequency laser crystal is to the pumping Optical Absorption is very abundant, output beam quality good, efficient high and welcome.
The laser that is positioned at 2～5 μ m middle-infrared bands has special important application in national defence, medical treatment, communication aspects.It is positioned at atmosphere " transparent window ", is in the service band of most of military detectors, can carry out the military uses such as tactical missile wake flame infrared radiation is simulated, the laser radar of eye-safe, the infrared interference of laser orientation.Can be used for remote sensing chemical sensitisation, air pollution control at civil area, it can also be used for laser surgey of new generation, and blood is condensed rapidly, near surgical wound surface little, hemostatic good (hydrone has very strong absworption peak 3 μ m).In addition, adopting 2～5 μ m to substitute now widely used 1.55 μ m also is a problem that has researching value as the optical fiber communication operation wavelength, because the Rayleigh scattering of material and the biquadratic of optical wavelength are inversely proportional to, adopt 2～5 μ m can effectively reduce fibre loss as operation wavelength, increase the distance of non-relay communication.Therefore, the laser of research and development middle-infrared band is of great significance for national security and development of the national economy tool.
Summary of the invention
The object of the present invention is to provide a kind of strong basis glistening light of waves in the chamber that takes full advantage of, obtain the high-power middle infrared laser based on frequency translation in the chamber of high efficiency, high light beam quality.
In order to realize above-mentioned target, the present invention adopts following technical scheme:
A kind of high-power middle infrared laser based on frequency translation in the chamber, it is characterized in that, comprise: the semiconductor laser pumping module, optical coupling system, basic frequency laser crystal, mid-infrared laser speculum, the middle infrared non-linear crystal that set gradually along the laser transmission direction, and the modulation device that the light that aforementioned basic frequency laser crystal is launched is formed the laserresonator of the basic frequency beam of high beam, the basic frequency beam of aforementioned high beam is modulated; Aforementioned optical coupling system is comprised of lens; " C " axle of aforementioned basic frequency laser crystal is vertically placed or horizontal positioned; The aforementioned laser resonant cavity is comprised of the chamber mirror.
The pump light of aforesaid semiconductor pump laser module output is transferred in the optical coupling system, behind the optical coupling system collimation focusing, be coupled in the basic frequency laser crystal end-face, produce stimulated emission behind the basic frequency laser absorption of crystal pump energy, the light of launching forms the basic frequency beam of high light beam quality through the modeling effect of laser resonant cavity mirror in laserresonator, under the modulating action of modulation device, obtain the modulated laser of high-peak power; Basic frequency laser after the modulation is injected and is carried out the optical parametric oscillation amplification in the middle infrared non-linear crystal, obtains mid-infrared laser output.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that the centre wavelength of aforesaid semiconductor pump laser module is 808nm or 880nm.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that aforementioned basic frequency laser crystal is Nd:YVO4, Nd:YLF, Nd:YAG, Nd:Glass, Yb:YAG or Er:YAG.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, the end face of aforementioned basic frequency laser crystal is coated with pump light and the anti-reflection anti-reflection film of 1064nm laser.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, aforementioned middle infrared non-linear crystal is phosphorus germanium zinc or PPLN artificial lens.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, the two ends of aforementioned middle infrared non-linear crystal are coated with 1064nm, 1.4 μ m and 3.8 μ m, three look high transmittance films.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, the structure of aforementioned laser resonant cavity is Z-type chamber, v-shaped cavity or other angle refrative cavity structure.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, the chamber mirror of aforementioned laser resonant cavity is level crossing or concave mirror or the combination of the two.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, aforementioned modulation device is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
Aforesaid high-power middle infrared laser based on frequency translation in the chamber is characterized in that, aforementioned laser resonant cavity inner laser output is provided with lens or set of lenses in the chamber.
Usefulness of the present invention is: compact conformation, good stability; Middle infrared laser is finished by finishing outside the chamber to have become in the chamber from the process that 1064nm laser is transformed into 3.8 μ m laser, utilize the high power density in the 1064nm chamber, greatly improve wavelength conversion efficiency, thereby obtained the mid-infrared laser output of high transfer power; In the situation that does not change the laser internal structure, in basic frequency laser crystal damage value scope, can further increase the power density of basic frequency laser in the chamber by improving the pump power of semiconductor laser pumping module, thereby obtain more high-power mid-infrared laser output.
Description of drawings
Fig. 1 is the structural representation of a specific embodiment of the high-power middle infrared laser based on frequency translation in the chamber of the present invention;
Fig. 2 is the laser output spectrum test result figure among Fig. 1;
Fig. 3 is the laser power stability test figure as a result among Fig. 1;
Fig. 4 is laser diode current and the power output graph of a relation among Fig. 1;
The implication of Reference numeral among the figure: 1-semiconductor laser pumping module, 2-lens, 3-lens, 4-chamber mirror, 5-basic frequency laser crystal, 6-chamber mirror, 7-chamber mirror, 8-modulation device, 9-chamber mirror, 10-chamber mirror, 11-chamber mirror, 12-chamber mirror, lens in the 13-chamber, 14-mid-infrared laser speculum, infrared non-linear crystal among the 15-, 16-chamber mirror.
Embodiment
Below in conjunction with the drawings and specific embodiments the present invention is done concrete introduction.
With reference to Fig. 1, high-power middle infrared laser based on frequency translation in the chamber of the present invention comprises: the semiconductor laser pumping module 1, optical coupling system, basic frequency laser crystal 5, mid-infrared laser speculum 14, the middle infrared non-linear crystal 15 that set gradually along the laser transmission direction, and the modulation device 8 that the light that the basic frequency laser crystal 5 is launched is formed the laserresonator of the basic frequency beam of high beam, the basic frequency beam of above-mentioned high beam is modulated.Wherein, optical coupling system is comprised of lens, specifically comprises lens 2 and lens 3; " C " axle of basic frequency laser crystal 5 is vertically placed, and the polarization direction that can guarantee the basic frequency laser of its generation is vertical direction, and " C " axle can 90-degree rotation be horizontal positioned also, and is corresponding, and the direction of middle infrared non-linear crystal 15 also 90-degree rotation is placed; Laserresonator is comprised of the chamber mirror, specifically comprises chamber mirror 4,6,7,9,10,11,12,16, its lumen mirror 4,6,7,10,11,12 and horizontal direction is miter angle or place at 135 degree angles, and chamber mirror 9,16 is vertically placed.
Laser of the present invention comprises that also the pump light that semiconductor laser pumping module 1 is exported is transferred to the optical fiber (not shown) in the optical coupling system, also the pump light of semiconductor laser pumping module 1 output directly can be transferred to optical coupling system without optical fiber.
With reference to Fig. 1, the operation principle of laser of the present invention is: the pump light of semiconductor laser pumping module 1 output is transferred in the optical coupling system, behind the optical coupling system collimation focusing, be coupled in the end face of basic frequency laser crystal 5, produce stimulated emission after the basic frequency laser crystal 5 absorptive pumping light energy, the light of launching forms the basic frequency beam of high light beam quality through the modeling effect of laser resonant cavity mirror in laserresonator, under the modulating action of modulation device 8, obtain the modulated laser of high-peak power; Basic frequency laser after the modulation is injected and is carried out the optical parametric oscillation amplification in the middle infrared non-linear crystal 15, obtains mid-infrared laser output.
As a kind of preferred scheme, the set of lenses that laser resonance endovenous laser output is provided with lens 13 in the chamber or is comprised of lens 13 in some chambeies.Lens 13 are convex lens in the chamber, are coated with on it 1064nm laser high transmittance film, because it has converging action, basic frequency laser can obtain less hot spot and larger power density in middle infrared non-linear crystal 15 inside after assembling.
In the present invention, semiconductor laser pumping module 1 is semiconductor laser diode, and its centre wavelength is 808nm, and maximum power output is 30W.Can also be according to the different semiconductor laser diodes of selecting other centre wavelengths of selected basic frequency laser crystal 5, for example selecting centre wavelength is the semiconductor laser diode of 880nm.
In the present invention, the basic frequency laser crystal 5 is Nd:YVO4, and it also can be Nd:YLF, Nd:YAG, Nd:Glass, Yb:YAG or Er:YAG.As a kind of preferred scheme, the end face of basic frequency laser crystal 5 is coated with pump light and the anti-reflection anti-reflection film of 1064nm laser, in order to increase it to the pumping Optical Absorption.
In the present invention, mid-infrared laser speculum 14 is level crossing, is coated with on it 1064nm laser high transmittance film, 1.4 μ m and 3.8 μ m laser high-reflecting films.
In the present invention, middle infrared non-linear crystal 15 is phosphorus germanium zinc, and it can also be the PPLN artificial lens.
As a kind of preferred scheme, the two ends of middle infrared non-linear crystal 15 are coated with 1064nm, 1.4 μ m and 3.8 μ m, three look high transmittance films.
As a kind of preferred scheme, basic frequency laser crystal 5 and middle infrared non-linear crystal 15 are all with putting into the heat radiation crystal cup behind the indium foil parcel.
The below introduces laserresonator.
The light that laserresonator is used for that the basic frequency laser crystal 5 is sent forms the basic frequency beam of high beam, and it is comprised of the chamber mirror, specifically comprises chamber mirror 4,6,7,9,10,11,12,16.Wherein, chamber mirror 4 is arranged on the front end of basic frequency laser crystal 5, is miter angle with horizontal direction, and its end face is coated with to the pump light high transmittance film, to 1064nm laser high-reflecting film; Chamber mirror 6,7 is arranged between basic frequency laser crystal 5 and the modulation device 8, is miter angle and 135 degree angles with horizontal direction respectively, and its end face is coated with 1064nm laser high-reflecting film; Chamber mirror 10,11,12 is arranged in basic frequency laser crystal 5 and the chamber between the lens 13, is 135 degree angles, miter angle, miter angle with horizontal direction respectively, and end face is coated with 1064nm laser high-reflecting film; Chamber mirror 9 is arranged at the other end of modulation device 8, is vertical placement, and end face is coated with 1064nm laser high-reflecting film; Chamber mirror 16 is vertically placed, and is arranged at the tail end of middle infrared non-linear crystal 15, and its end face is coated with to 1064nm and 1.4 μ m laser high-reflecting films, to 3.8 μ m laser high transmittance films.
Chamber mirror 4,6,7,9,10,11,12,16 can be all level crossing, also can be all concave mirror, can also be the combination of level crossing and concave mirror.
As a kind of preferred scheme, chamber mirror 4,6,7,9,10,11,12,16 is all level crossing.
As a kind of preferred scheme, the structure of the laserresonator of laser of the present invention is Z-type chamber, v-shaped cavity or other angle refrative cavity structure.
Its typical output wavelength of laser of the present invention comprises 1.3-5 μ m middle-infrared band, is not limited only to 3.8 μ m, and output wavelength is specifically determined by the phase-matching condition of middle infrared non-linear crystal 15.
Adopt laser of the present invention, in the situation that does not change the laser internal structure, in basic frequency laser crystal damage threshold values scope, can also improve the pump power of laser diode, further increase the power density of basic frequency laser in the chamber, thereby obtain more high-power mid-infrared laser output.
With reference to Fig. 2 to Fig. 4, the high-power middle infrared laser based on frequency translation in the chamber of setting up according to technique scheme to be tested, result of the test is as follows: actual measurement optical maser wavelength is 3.843 μ m; When laser pulse power was 40khz, under 30W, 808nm optical pumping power, 3.8 μ m peak power outputs reached 2.3W; In continuous one hour test process, the laser minimum power is 2.12W, and maximum power is 2.22W, and average power is 2.18W, and long-time stability are 4.6%.This shows that laser of the present invention has compact conformation, conversion efficiency is high, the advantages such as good stability.
Need to prove that above-described embodiment does not limit the present invention in any form, all employings are equal to replaces or technical scheme that the mode of equivalent transformation obtains, all drops in protection scope of the present invention.
Claims (10)
1. based on the high-power middle infrared laser of frequency translation in the chamber, it is characterized in that, comprise: the semiconductor laser pumping module, optical coupling system, basic frequency laser crystal, mid-infrared laser speculum, the middle infrared non-linear crystal that set gradually along the laser transmission direction, and the modulation device that the light that above-mentioned basic frequency laser crystal is launched is formed the laserresonator of the basic frequency beam of high beam, the basic frequency beam of above-mentioned high beam is modulated; Above-mentioned optical coupling system is comprised of lens; " C " axle of above-mentioned basic frequency laser crystal is vertically placed or horizontal positioned; Above-mentioned laserresonator is comprised of the chamber mirror.
2. the high-power middle infrared laser based on frequency translation in the chamber according to claim 1 is characterized in that, the centre wavelength of above-mentioned semiconductor laser pumping module is 808nm or 880nm.
3. the high-power middle infrared laser based on frequency translation in the chamber according to claim 1 is characterized in that, above-mentioned basic frequency laser crystal is Nd:YVO4, Nd:YLF, Nd:YAG, Nd:Glass, Yb:YAG or Er:YAG.
4. the high-power middle infrared laser based on frequency translation in the chamber according to claim 3 is characterized in that, the end face of above-mentioned basic frequency laser crystal is coated with pump light and the anti-reflection anti-reflection film of 1064nm laser.
5. the high-power middle infrared laser based on frequency translation in the chamber according to claim 1 is characterized in that, above-mentioned middle infrared non-linear crystal is phosphorus germanium zinc or PPLN artificial lens.
6. the high-power middle infrared laser based on frequency translation in the chamber according to claim 5 is characterized in that, the two ends of above-mentioned middle infrared non-linear crystal are coated with 1064nm, 1.4 μ m and 3.8 μ m, three look high transmittance films.
7. the high-power middle infrared laser based on frequency translation in the chamber according to claim 1 is characterized in that, the structure of above-mentioned laserresonator is Z-type chamber, v-shaped cavity or other angle refrative cavity structure.
8. the high-power middle infrared laser based on frequency translation in the chamber according to claim 7 is characterized in that, the chamber mirror of above-mentioned laserresonator is level crossing or concave mirror or the combination of the two.
9. the high-power middle infrared laser based on frequency translation in the chamber according to claim 1 is characterized in that, the said modulator part is the passive Q-adjusted switch of acousto-optic modulator, electro-optical modulation device or absorption-type.
10. according to claim 1 to the described high-power middle infrared laser based on frequency translation in the chamber of 9 any one, it is characterized in that above-mentioned laser resonance endovenous laser output is provided with lens or set of lenses in the chamber.
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Cited By (5)
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| CN103199423A (en) * | 2013-03-29 | 2013-07-10 | 中山大学 | Two-micrometer laser device based on intracavity optical parametric oscillator |
| CN106546992A (en) * | 2015-09-18 | 2017-03-29 | 弗劳恩霍夫应用研究促进协会 | For the apparatus and method of detection object within a detection region |
| CN112350147A (en) * | 2020-11-06 | 2021-02-09 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
| CN113288418A (en) * | 2021-05-22 | 2021-08-24 | 中国科学院理化技术研究所 | Laser scalpel with tunable wavelength |
| CN113346348A (en) * | 2021-05-22 | 2021-09-03 | 中国科学院理化技术研究所先进激光研究院(济南) | Laser scalpel with ultralow collateral damage |
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| CN202977963U (en) * | 2012-12-11 | 2013-06-05 | 苏州镭创光电技术有限公司 | Intracavity frequency conversion-based high-power mid-infrared laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199423A (en) * | 2013-03-29 | 2013-07-10 | 中山大学 | Two-micrometer laser device based on intracavity optical parametric oscillator |
| CN103199423B (en) * | 2013-03-29 | 2015-08-05 | 中山大学 | A kind of 2 μm of lasers based on Intracavity OPO |
| CN106546992A (en) * | 2015-09-18 | 2017-03-29 | 弗劳恩霍夫应用研究促进协会 | For the apparatus and method of detection object within a detection region |
| CN112350147A (en) * | 2020-11-06 | 2021-02-09 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
| CN112350147B (en) * | 2020-11-06 | 2022-06-24 | 长春理工大学 | Intermediate infrared laser based on annular cavity mixing end pump pulse output |
| CN113288418A (en) * | 2021-05-22 | 2021-08-24 | 中国科学院理化技术研究所 | Laser scalpel with tunable wavelength |
| CN113346348A (en) * | 2021-05-22 | 2021-09-03 | 中国科学院理化技术研究所先进激光研究院(济南) | Laser scalpel with ultralow collateral damage |
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