CN201149952Y - Self Raman multiple frequency solid yellow light laser - Google Patents
Self Raman multiple frequency solid yellow light laser Download PDFInfo
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- CN201149952Y CN201149952Y CNU2007200295554U CN200720029555U CN201149952Y CN 201149952 Y CN201149952 Y CN 201149952Y CN U2007200295554 U CNU2007200295554 U CN U2007200295554U CN 200720029555 U CN200720029555 U CN 200720029555U CN 201149952 Y CN201149952 Y CN 201149952Y
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Abstract
The utility model relates to a Raman frequency doubling solid yellow laser, which belongs to the crystal line laser field. The solid yellow laser utilizes a LD end face pumping c Neodymium Doped. Yttrium Orthovanadate (Nd:YVO4) Raman crystal to generate Raman light, and then utilizes a frequency doubling crystal potassium titanyl phosphate (KTP) to perform intra-cavity frequency doubling, so as to finally generate yellow laser. The Raman frequency doubling solid yellow laser is characterized in that the c Neodymium Doped. Yttrium Orthovanadate (Nd:YVO4) Raman crystal is adopted to be used as laser medium and Raman medium, therefore, the solid yellow laser has the advantages that the volume is small, the performance is stable, the power is high, the cost is low, and the solid yellow laser has wide practicability.
Description
(1) technical field
The utility model relates to a kind of solid state laser, particularly a kind of self-Raman multiple frequency solid Yellow light laser.
(2) background technology
At present external relevant for the report of solid Yellow light laser, they mainly adopt dual mode to realize: the one, with two-beam and frequency (Intracavity sum-frequency generation of 3.23W continuous-wave yellow light in anNd:YAG laser, " Optics Communications ", Vol.255,2005,248-252), the 2nd, in the chamber, use frequency doubling technology (Efficient all-solid-state yellow laser source producing 1.2-W average power, " Optics Letters ", Vol.24,1999,1490-1492).Compare with the method for intracavity frequency doubling and method frequently to have a volume big, power is low, conversion efficiency is poor, structural instability is difficult to shortcomings such as realization.And mostly present intracavity frequency doubling is to adopt three lithium borate monocrystalline (LBO) to do frequency-doubling crystal, but lithium triborate crystal LBO has easy deliquescence, the price height, non linear coefficient is little, and the phase matched temperature influence is bigger, needs to keep harsh conditions restrictions such as temperature constant, and is wayward.
(3) summary of the invention
For overcoming the defective of prior art, little with the realization volume, the power height, the big and constitutionally stable Yellow light laser of conversion efficiency, the utility model provide a kind of self-Raman multiple frequency solid Yellow light laser.
A kind of self-Raman multiple frequency solid Yellow light laser comprises laser diode LD end pumping source, optical fiber, coupled lens, resonant cavity, Nd-doped yttrium vanadate Nd:YVO4 self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal; The pump light that is sent by LD end pumping source enters in the resonant cavity through optical fiber and coupled lens, it is characterized in that resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, front end is an Effect of Back-Cavity Mirror, the rear end is an outgoing mirror, places Nd-doped yttrium vanadate Nd:YVO4 self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal in the resonant cavity successively; Above-mentioned crystal outside all surrounds with the metal derby that has open-work and pipeline, and crystal places in the open-work of metal derby, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
Described laser diode LD end pumping source is 808nm LD end pumping source.
Described Nd-doped yttrium vanadate Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that two end faces of self-raman crystal all are coated with wavelength.Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal produces fundamental frequency light both as laser medium, also makes the Raman medium simultaneously, is Raman light with the fundamental frequency phototransformation that produces.Nd-doped yttrium vanadate Nd:YVO
4The cut direction of self-raman crystal is the c direction of principal axis cutting along the physics definition.
Described acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of adjusting Q crystal all are coated with wavelength; The rf wave modulating frequency is 8-30KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
It is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of described KTP ktp crystal all are coated with wavelength, and the KTP ktp crystal is converted into gold-tinted as frequency-doubling crystal with Raman light.
Described Effect of Back-Cavity Mirror is coated with wavelength is the anti-reflection film of the pump light of 808nm and is the high anti-film of light of 1000nm-1200nm to wavelength.
It is the high anti-film of light of 1000nm-1200nm that described outgoing mirror is coated with wavelength, and this film is that the light of 587nm has high transmissivity to wavelength.
Described c cuts Nd-doped yttrium vanadate Nd:YVO
4The doping content of self-raman crystal is 0.2%-1%.
The curvature of Effect of Back-Cavity Mirror and outgoing mirror can be selected according to actual conditions.C cuts Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that self-raman crystal, frequency-doubling crystal KTP and acousto-optic Q modulation crystal all are coated with wavelength.Self-raman crystal Nd:YVO
4Doping content be 0.2%-1%, Nd:YVO
4Having bigger emission cross section, is a kind of good laser medium, and it also has good Raman active, very suitable needs of the present utility model simultaneously.Ktp crystal need consider according to circumstances that the phase matched angle cuts, and can effectively improve the performance of laser like this.The length of all crystals in the utility model all can be chosen according to specific requirement; The face area of crystal can be determined according to the area of beam cross section.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have higher peak power, so we use Q-modulating device in laser, can improve the peak power of fundamental frequency light so greatly, thereby improve the conversion efficiency of fundamental frequency light to Raman light, significantly increase the power output of yellow laser, effectively raised the performance of this laser.
The workflow of laser is as follows: the wavelength that send in LD end pumping source is that the pump light of 808nm enters c through optical fiber and coupled lens and cuts Nd:YVO
4Crystal, when the Q-switch of acousto-optic Q modulation device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers Raman light to; Raman light transfers gold-tinted at KTP frequency-doubling crystal place to through frequency-doubled effect at last, and is exported by outgoing mirror.
The utility model proposes a kind of new compound mode, use laser diode LD end pumping source, c cuts Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal, the KTP frequency-doubling crystal, adopt the mode of intracavity frequency doubling Raman light to produce yellow laser, the various shortcomings of above-mentioned laser have successfully been solved, a kind of new total solids high power Yellow light laser is provided, owing to adopt the method from Raman to produce Raman light, self-raman crystal is not only done laser medium but also do the Raman medium, the laser that separates than laser medium and Raman medium lacks uses a crystal, thereby the volume of this laser is littler.The volume of the utility model laser head is 10cm * 10cm * 17cm, and little with the volume of comparing in the background technology, cost is low, the efficient height, and light conversion efficiency can reach 7%, and the power output of gold-tinted can reach 500mW, and stable performance.
(4) description of drawings
Fig. 1 is the utility model laser light path structural representation.
Wherein: 1.LD end pumping source, 2. optical fiber, 3. coupled lens, 4. Effect of Back-Cavity Mirror, 5.c cuts the Nd-doped yttrium vanadate crystal, 6. acousto-optic Q modulation device, 7.KTP crystal, 8. outgoing mirror.
(5) embodiment
Embodiment 1:
The utility model device comprises that laser diode LD end pumping source 1, optical fiber 2, coupled lens 3, resonant cavity, c cut Nd-doped yttrium vanadate Nd:YVO as shown in Figure 1
4 Crystal 5, acousto-optic Q modulation device 6 and KTP ktp crystal 7; The pump light that is sent by LD end pumping source 1 enters in the resonant cavity through optical fiber 2 and coupled lens 3, it is characterized in that resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 8, front end is an Effect of Back-Cavity Mirror 4, and the rear end is an outgoing mirror 8, places c successively in the middle of the resonant cavity and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, acousto-optic Q modulation device 6 and KTP ktp crystal 7; Above-mentioned crystal outside all surrounds with the metal derby that has open-work and pipeline, and crystal places in the open-work of metal derby, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
Described laser diode LD end pumping source 1 is 808nm LD end pumping source.
Described c cuts Nd-doped yttrium vanadate Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that two end faces of self-raman crystal 5 all are coated with wavelength, and c cuts Nd-doped yttrium vanadate Nd:YVO
4Self-raman crystal 5 produces fundamental frequency light both as laser medium, also makes the Raman medium simultaneously, is Raman light with the fundamental frequency phototransformation that produces.
Described acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of adjusting Q crystal all are coated with wavelength; The rf wave modulating frequency is 10KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
It is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of described KTP ktp crystal 7 all are coated with wavelength, and KTP ktp crystal 7 is converted into gold-tinted as frequency-doubling crystal with Raman light.
The radius of curvature of described Effect of Back-Cavity Mirror 4 is 3000mm, and is coated with wavelength is the anti-reflection film of the pump light of 808nm and is the high anti-film of light of 1000nm-1200nm to wavelength that radius of curvature is 3000mm.
It is the high anti-film of light of 1000nm-1200nm that described outgoing mirror 8 is coated with wavelength, and this film is that the light of 587nm is high saturating to wavelength.
Described c cuts Nd-doped yttrium vanadate Nd:YVO
4The doping content of crystal 5 is 0.3%.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source 1 enters c through optical fiber 2 and coupled lens 3 and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1066.7nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers the 1178.7nm Raman light to; Raman light transfers the 589nm gold-tinted at KTP frequency-doubling crystal 7 places to through frequency-doubled effect at last, and by outgoing mirror 8 outputs.
Embodiment 2:
Identical with embodiment 1, the rf wave modulating frequency that is described acousto-optic Q modulation device 6 is 15KHz; The doping content that c cuts Nd-doped yttrium vanadate Nd:YVO4 crystal 5 is 0.5%, and the radius of curvature of Effect of Back-Cavity Mirror 4 is 1000mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source 1 enters c through optical fiber 2 and coupled lens 3 and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1066.7nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers the 1178.7nm Raman light to; Raman light transfers the 589nm gold-tinted at KTP frequency-doubling crystal 7 places to through frequency-doubled effect at last, and by outgoing mirror 8 outputs.
Embodiment 3:
Identical with embodiment 1, the rf wave modulating frequency that is described acousto-optic Q modulation device 6 is 25KHz; The doping content that c cuts Nd-doped yttrium vanadate Nd:YVO4 crystal 5 is 0.6%, and the radius of curvature of Effect of Back-Cavity Mirror 4 is 1000mm.
The workflow of laser: the pump light that 808nm is sent in LD end pumping source 1 enters c through optical fiber 2 and coupled lens 3 and cuts Nd-doped yttrium vanadate Nd:YVO
4Crystal 5, when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1066.7nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is because the effect of stimulated Raman scattering transfers the 1178.7nm Raman light to; Raman light transfers the 589nm gold-tinted at KTP frequency-doubling crystal 7 places to through frequency-doubled effect at last, and by outgoing mirror 8 outputs.
The core diameter of the coupled fiber 2 among above-mentioned three embodiment is 400 μ m, and numerical aperture is 0.22, and maximum power output is 32W; Outgoing mirror 8 is flat mirror; And all crystals all passes through water-cooled cooling.
Claims (8)
1. a self-Raman multiple frequency solid Yellow light laser comprises laser diode LD end pumping source, optical fiber, coupled lens, resonant cavity, Nd-doped yttrium vanadate Nd:YVO4 self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal; The pump light that is sent by LD end pumping source enters in the resonant cavity through optical fiber and coupled lens, it is characterized in that resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, front end is an Effect of Back-Cavity Mirror, the rear end is an outgoing mirror, places Nd-doped yttrium vanadate Nd:YVO4 self-raman crystal, acousto-optic Q modulation device and KTP ktp crystal in the resonant cavity successively; Above-mentioned crystal outside all surrounds with the metal derby that has open-work and pipeline, and crystal places in the open-work of metal derby, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
2. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1 is characterized in that described laser diode LD end pumping source is 808nm LD end pumping source.
3. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1 is characterized in that described Nd-doped yttrium vanadate Nd:YVO
4Cut direction be c direction of principal axis along physics definition, this self-raman crystal had both been done laser medium, did the Raman medium again.
4. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1 is characterized in that described acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface of adjusting Q crystal all are coated with wavelength; The rf wave modulating frequency is 8-30KHz.
5. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1, it is the anti-reflection film of light of 1000nm-1200nm that the both ends of the surface that it is characterized in that described KTP ktp crystal all are coated with wavelength.
6. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1 is characterized in that described Effect of Back-Cavity Mirror is coated with wavelength is the anti-reflection film of the pump light of 808nm and is the high anti-film of light of 1000nm-1200nm to wavelength.
7. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1 is characterized in that it is the high anti-film of light of 1000nm-1200nm that described outgoing mirror is coated with wavelength, this film and be that the light of 587nm is high saturating to wavelength.
8. self-Raman multiple frequency solid Yellow light laser as claimed in claim 1 is characterized in that described Nd-doped yttrium vanadate Nd:YVO
4It is the anti-reflection film of light of 1000nm-1200nm that two end faces of self-raman crystal all are coated with wavelength.
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| Application Number | Priority Date | Filing Date | Title |
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| CNU2007200295554U CN201149952Y (en) | 2007-11-06 | 2007-11-06 | Self Raman multiple frequency solid yellow light laser |
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| CNU2007200295554U CN201149952Y (en) | 2007-11-06 | 2007-11-06 | Self Raman multiple frequency solid yellow light laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986480A (en) * | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | Composite self-Raman frequency-doubled yellow laser crystal module |
| CN103346468A (en) * | 2013-06-09 | 2013-10-09 | 华侨大学 | All-solid-state Q-switching frequency multiplication non-diffracting laser device |
| CN103944053A (en) * | 2014-05-09 | 2014-07-23 | 长春理工大学 | Full-solid-state single-spectral-line narrow linewidth yellow light laser |
| CN105811238A (en) * | 2016-05-11 | 2016-07-27 | 中国科学院上海光学精密机械研究所 | Method for preparing high-power laser head based on c-cut crystal |
| CN106684674A (en) * | 2017-02-13 | 2017-05-17 | 天津大学 | Two-crystal compound gain inner cavity Raman yellow light laser |
-
2007
- 2007-11-06 CN CNU2007200295554U patent/CN201149952Y/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101986480A (en) * | 2009-07-29 | 2011-03-16 | 中国科学院福建物质结构研究所 | Composite self-Raman frequency-doubled yellow laser crystal module |
| CN103346468A (en) * | 2013-06-09 | 2013-10-09 | 华侨大学 | All-solid-state Q-switching frequency multiplication non-diffracting laser device |
| CN103346468B (en) * | 2013-06-09 | 2016-02-24 | 华侨大学 | All solid state q-multiplier salt free ligands laser |
| CN103944053A (en) * | 2014-05-09 | 2014-07-23 | 长春理工大学 | Full-solid-state single-spectral-line narrow linewidth yellow light laser |
| CN105811238A (en) * | 2016-05-11 | 2016-07-27 | 中国科学院上海光学精密机械研究所 | Method for preparing high-power laser head based on c-cut crystal |
| CN106684674A (en) * | 2017-02-13 | 2017-05-17 | 天津大学 | Two-crystal compound gain inner cavity Raman yellow light laser |
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Granted publication date: 20081112 Termination date: 20091207 |