CN101299512A - Self Raman multiple frequency complete-solid yellow light laser - Google Patents
Self Raman multiple frequency complete-solid yellow light laser Download PDFInfo
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- CN101299512A CN101299512A CNA2008101380229A CN200810138022A CN101299512A CN 101299512 A CN101299512 A CN 101299512A CN A2008101380229 A CNA2008101380229 A CN A2008101380229A CN 200810138022 A CN200810138022 A CN 200810138022A CN 101299512 A CN101299512 A CN 101299512A
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Abstract
A self-raman double frequency total solid yellow light laser, includes a laser diode LD pumping source, a resonant cavity consisting of a back cavity mirror and an output mirror, characterized in that, a self-raman crystal, a Q-adjusting device and a double frequency crystal are arranged in the resonant cavity, which are processed with the temperature control by a cooling device. The laser of the invention has smaller volume, higher output power and conversion efficiency than that in the background technology, which can be widely used in the laser medical treatment field with small volume, stable performance and low cost.
Description
(1) technical field
The present invention relates to a kind of solid state laser, particularly a kind of self-Raman multiple frequency complete solid yellow light laser.
(2) background technology
Laser technology is one of invention of great significance of twentieth century, now has been widely used in every field such as industrial production, communication, information processing, health care, military affairs, culture and education and scientific research.Along with the important breakthrough of semiconductor laser diode technology, solid state laser obtains powerful development, and its application is constantly expanded.The all solid laser that utilizes the LD pumping be a kind of efficient, stable,, the second generation novel solid laser of good beam quality, long-life, compact conformation, what become the laser subject gives priority to one of direction, in space communication, optical fiber communication, atmospheric research, environmental science, medicine equipment, optical image is handled, and high-tech areas such as laser printer have the application prospect that shows unique characteristics.
The laser of yellow band can be treated hemangioma cutis, nevus flammeus, telangiectasis, brandy nose and spider angioma etc., is widely used in the laser medicine field.Gold-tinted laser can be used as sodium beacon light source, at military, meteorological field important application is arranged.Yellow light laser also is widely used in fields such as spectroscopy, information stores, laser radars.At present, the research that produces ruddiness, green glow, blue light by intracavity frequency doubling by the total solidifying laser device of LD pumping is comparative maturity, but, the laser that produces yellow band with the microlaser of LD pumping is than above several wave bands difficulty all, this be because current active ions have that the spectral line of enough big stimulated emission cross sections is feasible can be by direct frequency multiplication generation gold-tinted.
At present, external relevant for the report of solid Yellow light laser.They mainly adopt dual mode to realize: the one, adopt two-beam and method (Intracavity sum-frequency generation of 3.23 Wcontinuous-wave yellow light in an Nd:YAG laser frequently, " Optics Communications ", Vol.255,2005,248-252), two technology that are to use the frequency multiplication Raman light.To have a volume big with frequently method, and power is low, and conversion efficiency is poor, and structural instability is difficult to shortcomings such as realization; The method of frequency multiplication Raman light is than simple with method frequently, and still mostly in the world at present is method (Low threshold, the diode end-pumped Nd of employing cavity external frequency multiplication Raman light
3+: GdVO
4Self-Ramanlaser, " Optical Materials ", Vol.29,2007,1817-1820) and method (Efficient all-solid-state yellow laser source producing 1.2-W average power, " Optics Letters ", the Vol.24 of intracavity frequency doubling continuous Raman light, 1999,1490-1492; All-solid-state 704mW continuous-waveyellow source based on an intracavity, frequency-doubled crystalline Raman laser, " Optics Letters ", Vol.32,2007,1114-1116).The method of cavity external frequency multiplication Raman light causes shg efficiency poor because the power of Raman light is low outside the chamber, and the gold-tinted power of output is low; The method of intracavity frequency doubling continuous Raman light can not obtain high-power gold-tinted output then because the peak power of fundamental frequency light is low, and the conversion efficiency that converts Raman light to is poor.
(3) summary of the invention
For overcoming the defective of prior art, to realize that volume is little, cost is low, power is high, constitutionally stable Yellow light laser, the invention provides a kind of self-Raman multiple frequency complete solid yellow light laser.
A kind of self-Raman multiple frequency complete solid yellow light laser comprises laser diode (LD) pumping source, resonant cavity, and resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, it is characterized in that placing in the resonant cavity self-raman crystal, Q-modulating device and frequency-doubling crystal; Self-raman crystal, Q-modulating device and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into self-raman crystal and converts fundamental frequency light to, effect generation stimulated Raman scattering owing to Raman effect produces Raman light to the fundamental frequency light that produces at the self-raman crystal place, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and exported by outgoing mirror.
Described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pumping module, cooling device.
Described resonant cavity in LD profile pump situation cavity of resorption side pumping module and the relative position of self-raman crystal and Q-switch can change mutually.
Described self-raman crystal can be a kind of of neodymium-doped (Nd) or the following crystal of mixing ytterbium (Yb): tungstates (KGd (WO
4)
2, BaWO
4, SrWO
4, Pb (WO
4)
2, KLu (WO
4)
2Deng), vanadic acid salt (YVO
4, GdVO
4Deng), Nitrates (Ba (NO
3)
2Deng), iodates (LiIO
3Deng); Also can be bonding crystal vanadic acid yttrium/Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4).
The doping content of described self-raman crystal is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
Described from the graceful crystal of Raman under LD end pumping situation, two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
Described from the Raman Raman crystal can be as required along different directions and angle cutting, can effectively improve the performance of laser like this.
Described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber; The acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and the both ends of the surface of adjusting Q crystal all are coated with the anti-reflection film of 1000nm-1200nm wave band; Modulating frequency is 1-50KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect; Electric-optically Q-switched device is made up of electrooptic crystal and driving power, utilizes the electro optic effect of crystal, the phase place of passing through laser is wherein produced modulation, and then change polarization state, finishes open and close door process; Saturable absorber is to utilize the exciting of material, transition characteristic, closes the door when being excited to absorb, opens the door during transition downwards, finishes open and close gate control to laser with this.
Described cooling device has dual mode: the recirculated water cooling---crystal on side face all encases with the metal derby that has pipeline, continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal; Semiconductor refrigerating---crystal on side face is surrounded by the semiconductor refrigerating piece.
Described frequency-doubling crystal can be potassium titanium oxide phosphate KTP, three lithium borate LBO etc.; The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.Frequency-doubling crystal can cut along different directions and angle according to phase matched and other needs, can effectively improve the performance of laser like this, improves the power output of laser.
Effect of Back-Cavity Mirror in the described resonant cavity when the LD end pumping, be coated with the anti-reflection film of pump light wavelength and to the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; When the LD profile pump, be coated with the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; Outgoing mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has transmissivity greater than 80% near the gold-tinted the 590nm.
The chamber of described resonant cavity is long to be 5cm-50cm, and the Effect of Back-Cavity Mirror of resonant cavity and the radius of curvature of outgoing mirror can be selected according to actual conditions.
The length of all crystals among the present invention all can be chosen according to specific requirement; The end surface shape of crystal and area can be determined according to the area of beam cross section.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have high peak power, so we use Q-modulating device in laser, can effectively increase the peak power of fundamental frequency light like this, thereby improve the conversion efficiency of fundamental frequency light, effectively improved the performance of laser to Raman light.
The workflow of laser is as follows: the pump light that the LD pumping system sends is coupled into self-raman crystal, and when the Q-switch of Q-modulating device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation, and simultaneously because the Raman effect of self-raman crystal, fundamental frequency light goes out to be converted to Raman light at self-raman crystal; Raman light is finished the frequency multiplication process at the frequency-doubling crystal place and is transferred gold-tinted to, and is exported by outgoing mirror.
The present invention uses a self-raman crystal not only to do gain medium but also do the Raman medium, adopts the method for intracavity from Raman, and uses frequency-doubling crystal frequency multiplication Raman light in the chamber, has successfully obtained yellow laser.The present invention has adopted Q-regulating technique, made full use of the high power density of Raman light in the high-peak power of fundamental frequency Q impulse and the chamber, improved the performance of laser, the various shortcomings of above-mentioned laser have been solved, a kind of new small size is provided, comparing in the complete-solid yellow light laser of good stability, laser of the present invention and background technology has higher power output and conversion efficiency, and volume is little, stable performance, cost are low.
(4) description of drawings
Fig. 1 is the light channel structure schematic diagram of LD end-pumped laser of the present invention, and Fig. 2 is the light channel structure schematic diagram of LD side-pumped laser of the present invention.
Wherein: 1. laser diode, 2. optical fiber, 3. coupled lens group, 4. Effect of Back-Cavity Mirror, 5. self-raman crystal, 6. Q-modulating device, 7. frequency-doubling crystal, 8. outgoing mirror, 9.LD side pumping module, 10. cooling device
(5) embodiment
Embodiment 1:
The embodiment of the invention 1 comprises laser diode LD end pumping source, resonant cavity as shown in Figure 1; Resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 8, and self-raman crystal 5 selects neodymium-doped vanadic acid gadolinium Nd:GdVO
4Crystal, Q-modulating device 6 is the acousto-optic Q modulation device, frequency-doubling crystal 7 is selected the potassium titanium oxide phosphate ktp crystal for use.Place self-raman crystal 5, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 in the resonant cavity successively; Self-raman crystal 5, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal.
The laser diode LD pumping source comprises laser diode 1, optical fiber 2 and coupled lens group 3, and pump light enters resonant cavity through optical fiber 2 and coupled lens group 3; The output wavelength of pumping source is 808nm, and Maximum pumping is 30W, and the fiber core radius of optical fiber 2 is 400 μ m, and numerical aperture is 0.22.
The chamber of resonant cavity is long to be 15cm.
Self-raman crystal 5 neodymium-doped vanadic acid gadolinium Nd:GdVO
4Crystal is of a size of 3 * 3 * 15mm
3, doping content is 0.2-at.%, along the c direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Effect is to produce fundamental frequency light and the effect by stimulated Raman scattering is converted to Raman light with fundamental frequency light.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Frequency-doubling crystal 7 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); In order to satisfy the phase-matching condition of crystal when 20 spend, along θ=68.7 degree, φ=0 degree angle is cut with ktp crystal for we.
Effect of Back-Cavity Mirror 4 is a concave mirror, and radius of curvature is 3000mm, is coated with the anti-reflection film of 808nm wavelength and the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
The workflow of laser: the pump light that laser diode 1 sends the 808nm wavelength enters neodymium-doped vanadic acid gadolinium Nd:GdVO through optical fiber 2 and coupled lens 3
4In the crystal, when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is at neodymium-doped vanadic acid gadolinium Nd:GdVO
4The crystal place because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, is converted to the 590nm gold-tinted at KTP frequency-doubling crystal 7 places owing to frequency-doubled effect, and by outgoing mirror 8 outputs.
Embodiment 2:
The embodiment of the invention 2 comprises laser diode LD side pumping module 9, resonant cavity as shown in Figure 2; Resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 8, and self-raman crystal 5 is neodymium-doped tungstic acid barium Nd:BaWO
4Crystal, Q-modulating device 6 are acousto-optic Q modulation devices, and frequency-doubling crystal 7 is selected the potassium titanium oxide phosphate ktp crystal for use.Place LD side pump module 9 and self-raman crystal 5 neodymium-doped tungstic acid barium Nd:BaWO in the resonant cavity successively
4Crystal, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 potassium titanium oxide phosphate ktp crystals; Above-mentioned crystal on side face all surrounds with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
Described laser diode LD side pumping module 9 is that near the 808nm LD side-pump laser head (peak power 180W), driving power and water cooling plant formed by wavelength.
The chamber of resonant cavity is long to be 13cm.
Self-raman crystal 5 neodymium-doped tungstic acid barium Nd:BaWO
4Crystal is of a size of 5 * 5 * 46.6mm
3, doping content is 1.2-at.%, two end faces all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 10KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Frequency-doubling crystal 7 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); Is 20 phase-matching conditions when spending in order to satisfy crystal in temperature, we with ktp crystal along θ=68.7 degree, φ=0 degree angle cutting.
Effect of Back-Cavity Mirror 4 is thin convex lens, and radius of curvature is 800mm, is coated with the anti-reflection film of 808nm wavelength and the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
The workflow of laser: the pump light that the 808nm wavelength is sent in LD profile pump source is coupled into neodymium-doped tungstic acid barium Nd:BaWO
4In the crystal, when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power at the self-raman crystal place because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, at KTP frequency-doubling crystal 7 places because frequency-doubled effect is converted to the 590nm gold-tinted, and by outgoing mirror 8 outputs.
Embodiment 3:
Identical with embodiment 1, be that described self-raman crystal 5 is Nd-doped yttrium vanadate Nd:YVO
4Crystal is of a size of 3 * 3 * 15mm
3, along the c direction of principal axis cutting of physics definition, the both ends of the surface of self-raman crystal 5 all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and self-raman crystal 5 doping contents are 2-at.%.Placing sharp self-raman crystal 5 successively in the resonant cavity is Nd-doped yttrium vanadate Nd:YVO
4Crystal, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 potassium titanium oxide phosphate ktp crystals, the chamber of resonant cavity is long to be 13cm.
Embodiment 4:
Identical with embodiment 1, be that described self-raman crystal 5 is neodymium-doped tungstic acid lutetium potassium Nd:KLu (WO
4)
2Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of self-raman crystal 5 all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and the doping content of self-raman crystal 5 is 0.1-at.%; Place self-raman crystal 5 neodymium-doped tungstic acid lutetium potassium Nd:KLu (WO in the resonant cavity successively
4)
2Crystal, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 potassium titanium oxide phosphate KTP, the chamber of resonant cavity is long to be 15cm.
Embodiment 5:
Identical with embodiment 1, be that described self-raman crystal 5 is neodymium-doped tungstic acid strontium Nd:SrWO
4Crystal is of a size of 4 * 4 * 35mm
3, the doping content of crystal is 1-at.%, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place self-raman crystal 5, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 in the resonant cavity successively, the chamber of resonant cavity is long to be 12cm.Q-switch is an acousto-optic Q modulation, and modulating frequency is 20KHz.
Embodiment 6:
Identical with embodiment 1, be that described self-raman crystal 5 is the plumbous Nd:PbWO of neodymium-doped tungstic acid
4Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of self-raman crystal 5 all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and the doping content of self-raman crystal 5 is 0.8-at.%; Q-modulating device 6 is Cr
4+: YAG saturable absorber passive Q-switch, its small-signal transmitance is 90%, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place self-raman crystal 5, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 in the resonant cavity successively.The chamber of resonant cavity is long to be 13cm.
Embodiment 7:
Identical with embodiment 2, be that described self-raman crystal 5 is neodymium-doped tungstic acid gadolinium potassium Nd:KGd (WO
4)
2Crystal is of a size of 4 * 4 * 35mm
3, the both ends of the surface of self-raman crystal 5 all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and the doping content of self-raman crystal 5 is 0.8-at.%; Described frequency-doubling crystal 7 is three lithium borate lbo crystals, and the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The chamber of described resonant cavity is long for 15cm, places acousto-optic Q modulation device 6, LD side pump module 10 and self-raman crystal 5 and frequency-doubling crystal 7 in the resonant cavity successively.Q-switch is an acousto-optic Q modulation, and modulating frequency is 10KHz.
Embodiment 8:
Identical with embodiment 1, be described self-raman crystal 5 are bonding Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4), its doping content is 0.5%, is of a size of 3mm * 3mm * 3mm (YVO
4)+3mm * 3mm * 8mm (Nd:YVO
4), the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm wavelength and 1000nm-1200nm wave band.The chamber of resonant cavity is long for 11cm, places self-raman crystal 5 bonding Nd-doped yttrium vanadate (YVO in the resonant cavity successively
4/ Nd:YVO
4), acousto-optic Q modulation device 6 and frequency-doubling crystal 7 potassium titanium oxide phosphate ktp crystals.
Example 9:
Identical with embodiment 1, be that described self-raman crystal 5 is for mixing ytterbium vanadic acid gadolinium Yb:GdVO
4Crystal is of a size of 5 * 5 * 1mm
3, doping content is 3-at.%; The both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; The output wavelength of pumping source is 940nm, and the fiber core radius of optical fiber is 100 μ m.Place self-raman crystal 5 in the resonant cavity successively and mix ytterbium vanadic acid gadolinium Yb:GdVO
4Crystal, acousto-optic Q modulation device 6 and frequency-doubling crystal 7 potassium titanium oxide phosphate ktp crystals, the chamber of resonant cavity is long to be 12cm.
All crystals among above-mentioned nine embodiment all passes through water-cooling apparatus 11 temperature controls, and water temperature is 20 degree.
Claims (10)
1. a self-Raman multiple frequency complete solid yellow light laser comprises laser diode LD pumping source, resonant cavity, and resonant cavity is made up of outgoing mirror and Effect of Back-Cavity Mirror, it is characterized in that placing in the resonant cavity self-raman crystal, Q-modulating device and frequency-doubling crystal; Self-raman crystal, Q-modulating device and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into self-raman crystal and converts fundamental frequency light to, and the fundamental frequency light of generation produces Raman light at the self-raman crystal place, and Raman light is finished the frequency multiplication process in frequency-doubling crystal, produces gold-tinted and is exported by outgoing mirror.
2. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1 is characterized in that described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pumping module, cooling device.
3. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1, it is characterized in that described resonant cavity in LD profile pump situation cavity of resorption side pumping module and the relative position of self-raman crystal and Q-switch can change mutually.
4. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1 is characterized in that described self-raman crystal can be a kind of of neodymium-doped or the following crystal of mixing ytterbium: tungstates, vanadic acid salt, Nitrates, iodates; It also can be bonding crystal vanadic acid yttrium/Nd-doped yttrium vanadate.
5. as claim 1 or 4 described self-Raman multiple frequency complete solid yellow light lasers, the doping content that it is characterized in that described self-raman crystal is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
6. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1, it is characterized in that described from the graceful crystal of Raman under LD end pumping situation, two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
7. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1 is characterized in that described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber.
8. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1 is characterized in that the chamber length of described resonant cavity is 5cm-50cm.
9. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1, it is characterized in that Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wavelength when the LD end pumping and to the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; When the LD profile pump, be coated with the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; Outgoing mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has transmissivity greater than 80% near the gold-tinted the 590nm.
10. self-Raman multiple frequency complete solid yellow light laser as claimed in claim 1 is characterized in that described frequency-doubling crystal can be potassium titanium oxide phosphate KTP, three lithium borate LBO etc.; The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102044838A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Stimulated Raman sum frequency laser wavelength conversion device |
| CN103107479A (en) * | 2013-01-25 | 2013-05-15 | 上海交通大学 | 2.9 mu m intermediate infrared solid-state laser based on automatic Raman pump |
| CN103531998A (en) * | 2013-10-25 | 2014-01-22 | 李腾飞 | Dipulse laser of LD pump |
| CN103618205A (en) * | 2013-11-28 | 2014-03-05 | 清华大学 | Full-solid-state single longitudinal mode yellow light laser |
| CN104009375A (en) * | 2014-04-03 | 2014-08-27 | 青岛镭视光电科技有限公司 | Yellow-light self-Raman laser |
| CN104466660A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院光电研究院 | All-solid-state self-Raman tunable laser unit |
| CN106229806A (en) * | 2016-09-27 | 2016-12-14 | 天津大学 | The tunable alaxadrite laser of Raman gold-tinted pumping |
| CN114389128A (en) * | 2021-12-31 | 2022-04-22 | 苏州英谷激光有限公司 | High-power continuous laser with wavelength of 532nm-559nm-588nm from Raman |
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2008
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102044838A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Stimulated Raman sum frequency laser wavelength conversion device |
| CN103107479A (en) * | 2013-01-25 | 2013-05-15 | 上海交通大学 | 2.9 mu m intermediate infrared solid-state laser based on automatic Raman pump |
| CN103107479B (en) * | 2013-01-25 | 2015-02-25 | 上海交通大学 | 2.9 mu m intermediate infrared solid-state laser based on automatic Raman pump |
| CN103531998A (en) * | 2013-10-25 | 2014-01-22 | 李腾飞 | Dipulse laser of LD pump |
| CN103618205A (en) * | 2013-11-28 | 2014-03-05 | 清华大学 | Full-solid-state single longitudinal mode yellow light laser |
| CN103618205B (en) * | 2013-11-28 | 2016-09-21 | 清华大学 | A kind of full-solid-state single longitudinal mode yellow light laser |
| CN104009375A (en) * | 2014-04-03 | 2014-08-27 | 青岛镭视光电科技有限公司 | Yellow-light self-Raman laser |
| CN104466660A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院光电研究院 | All-solid-state self-Raman tunable laser unit |
| CN106229806A (en) * | 2016-09-27 | 2016-12-14 | 天津大学 | The tunable alaxadrite laser of Raman gold-tinted pumping |
| CN106229806B (en) * | 2016-09-27 | 2019-02-22 | 天津大学 | The tunable alaxadrite laser of Raman yellow light pumping |
| CN114389128A (en) * | 2021-12-31 | 2022-04-22 | 苏州英谷激光有限公司 | High-power continuous laser with wavelength of 532nm-559nm-588nm from Raman |
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