CN101308993A - Inner chamber Raman frequency doubling completely solid yellow laser - Google Patents
Inner chamber Raman frequency doubling completely solid yellow laser Download PDFInfo
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- CN101308993A CN101308993A CNA2008101380290A CN200810138029A CN101308993A CN 101308993 A CN101308993 A CN 101308993A CN A2008101380290 A CNA2008101380290 A CN A2008101380290A CN 200810138029 A CN200810138029 A CN 200810138029A CN 101308993 A CN101308993 A CN 101308993A
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Abstract
Disclosed is an all-solid-state double frequency yellow Raman laser device with an intra-cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror and an output lens; a laser amplifying medium, a Q value adjusting device, a Raman crystal and a frequency doubling crystal are arranged in the resonator. The temperature of the laser amplifying medium, the Q value adjusting device, the Raman crystal and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.
Description
(1) technical field
The present invention relates to a kind of solid state laser, particularly a kind of inner chamber Raman frequency doubling completely solid yellow laser.
(2) background technology
Laser technology is one of invention of great significance of twentieth century, now has been widely used in every field such as industrial production, communication, information processing, health care, military affairs, culture and education and scientific research.Along with the important breakthrough of semiconductor laser diode technology, solid state laser obtains powerful development, and its application is constantly expanded.The all solid laser that utilizes the LD pumping be a kind of efficient, stable,, the second generation novel solid laser of good beam quality, long-life, compact conformation, what become the laser subject gives priority to one of direction, in space communication, optical fiber communication, atmospheric research, environmental science, medicine equipment, optical image is handled, and high-tech areas such as laser printer have the application prospect that shows unique characteristics.
The laser of yellow band can be treated hemangioma cutis, nevus flammeus, telangiectasis, brandy nose and spider angioma etc., is widely used in the laser medicine field.Gold-tinted laser can be used as sodium beacon light source, at military, meteorological field important application is arranged.Yellow light laser also is widely used in fields such as spectroscopy, information stores, laser radars.At present, the research that produces ruddiness, green glow, blue light by intracavity frequency doubling by the total solidifying laser device of LD pumping is comparative maturity, but, the laser that produces yellow band with the microlaser of LD pumping is than above several wave bands difficulty all, this be because current active ions have that the spectral line of enough big stimulated emission cross sections is feasible can be by direct frequency multiplication generation gold-tinted.
At present, external relevant for the report of solid Yellow light laser.They mainly adopt dual mode to realize: the one, adopt two-beam and method (Intracavity sum-frequency generation of 3.23W continuous-wave yellow light in an Nd:YAG laser frequently, " Optics Communications ", Vol.255,2005,248-252), two technology that are to use the frequency multiplication Raman light.To have a volume big with frequently method, and power is low, and conversion efficiency is poor, and structural instability is difficult to shortcomings such as realization; The method of frequency multiplication Raman light is than simple with method frequently, and still mostly in the world at present is method (Low threshold, the diode end-pumped Nd of employing cavity external frequency multiplication Raman light
3+: GdVO
4Self-Raman laser, " Optical Materials ", Vol.29,2007,1817-1820) and method (Efficient all-solid-state yellow laser source producing 1.2-W average power, " Optics Letters ", the Vol.24 of intracavity frequency doubling continuous Raman light, 1999,1490-1492; All-solid-state 704mW continuous-waveyellow source based on an intracavity, frequency-doubled crystalline Raman laser, " Optics Letters ", Vol.32,2007,1114-1116).The method of cavity external frequency multiplication Raman light causes shg efficiency poor because the power of Raman light is low outside the chamber, and the gold-tinted power of output is low; The method of intracavity frequency doubling continuous Raman light can not obtain high-power gold-tinted output then because the peak power of fundamental frequency light is low, and the efficient that converts Raman light to is poor.
(3) summary of the invention
For overcoming the defective of prior art, to realize that volume is little, cost is low, power is high, constitutionally stable Yellow light laser, the invention provides a kind of inner chamber Raman frequency doubling completely solid yellow laser.
A kind of inner chamber Raman frequency doubling completely solid yellow laser, comprise laser diode (LD) pumping source, resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, it is characterized in that placing in the resonant cavity gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal; Gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the LD pumping source is coupled into gain medium and converts fundamental frequency light to, when the fundamental frequency light that produces passes through Raman crystal, stimulated Raman scattering takes place under the Raman effect effect produce Raman light, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and exported by outgoing mirror.
Described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pump module, cooling device.
The Q-switch of described resonant cavity in LD end pumping situation cavity of resorption, the relative position of Raman crystal can be changed mutually; The side pump module under LD profile pump situation in the resonant cavity and the relative position of gain medium, Q-switch and Raman crystal can be changed mutually.
Described gain medium can be a kind of in neodymium-doped (Nd) or the following all crystal of mixing ytterbium (Yb): yttrium-aluminium-garnet (YAG), vanadic acid yttrium (YVO
4), vanadic acid gadolinium (GdVO
4), vanadic acid lutetium (LuVO
4), lithium yttrium fluoride (YLF), yttrium aluminate (YAP), Gd-Ga garnet (GGG), wolframic acid gadolinium potassium (KGd (WO
4)
2) etc.; Also can be bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet (YAG/Nd:YAG), vanadic acid yttrium/Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4) a kind of in the crystal.
The doping content of described gain medium is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
Described gain medium is under LD end pumping situation, and two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
Described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber; The acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and the both ends of the surface of adjusting Q crystal all are coated with the anti-reflection film of 1000nm-1200nm wave band; Modulating frequency is 1-50KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect; Electric-optically Q-switched device is made up of electrooptic crystal and driving power, utilizes the electro optic effect of crystal, the phase place of passing through laser is wherein produced modulation, and then change polarization state, finishes open and close door process; Saturable absorber is to utilize the exciting of material, transition characteristic, closes the door when being excited to absorb, opens the door during transition downwards, finishes open and close gate control to laser with this.
Described cooling device has dual mode: the recirculated water cooling---crystal on side face all encases with the metal derby that has pipeline, continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal; Semiconductor refrigerating---crystal on side face is surrounded by the semiconductor refrigerating piece.
Described Raman crystal can be tungstates (KGd (WO
4)
2, BaWO
4, SrWO
4, PbWO
4, KLu (WO
4)
2Deng), vanadic acid salt (YVO
4, GdVO
4Deng), Nitrates (Ba (NO
3)
2Deng), iodates (LiIO
3Deng) in a kind of; The both ends of the surface of Raman medium are all plated the anti-reflection film of 1000nm-1200nm wave band.Raman crystal can effectively improve the performance of laser so as required along different directions and angle cutting.
Described frequency-doubling crystal can be potassium titanium oxide phosphate KTP, three lithium borate LBO etc.The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.Frequency-doubling crystal can cut along different directions and angle according to phase matched and other needs, can effectively improve the performance of laser like this, improves the power output of laser.
Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wavelength and 1000nm-1200nm wave band when the LD end pumping reflectivity is greater than 90% reflectance coating; When the LD profile pump, be coated with the reflectivity of 1000nm-1200nm wave band greater than 90% reflectance coating; Outgoing mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has transmissivity greater than 80% near the gold-tinted of the wavelength 590nm.
The chamber of described resonant cavity is long to be 5cm-50cm, and the Effect of Back-Cavity Mirror of resonant cavity and the radius of curvature of outgoing mirror can be selected according to actual conditions.
The length of all crystals among the present invention all can be chosen according to specific requirement; The end surface shape of crystal and area can be determined according to the area of beam cross section.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have higher peak power,, can increase the peak power of fundamental frequency light like this so we use Q-modulating device in laser, thereby improve the conversion efficiency of fundamental frequency light, effectively improved the performance of laser to Raman light.By adopting Q-regulating technique and in the chamber, using frequency-doubling crystal frequency multiplication Raman light, obtained high-power gold-tinted output.Such laser can effectively compress the Yellow light laser volume, can make full use of the high power density of Raman light in the high peak power of fundamental frequency Q impulse and the chamber, improve the stability of laser, reduced cost, and had high average output power and conversion efficiency.
The workflow of laser is as follows: the pump light that the LD pumping source sends is coupled into gain medium, and when the Q-switch of Q-modulating device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation; Fundamental frequency light with high peak power is through Raman crystal, because the effect of stimulated Raman scattering transfers Raman light to; Raman light is finished the frequency multiplication process at the frequency-doubling crystal place and is transferred gold-tinted to, and is exported by outgoing mirror.
The present invention has adopted new chamber type and new compound mode, has adopted Q-regulating technique, and uses frequency-doubling crystal frequency multiplication Raman light in the chamber, has successfully obtained yellow laser.The present invention has made full use of the high power density of Raman light in the high-peak power of fundamental frequency Q impulse and the chamber, improved the performance of laser, successfully solve the various shortcomings of above-mentioned laser, provide a kind of new small size, the complete-solid yellow light laser of good stability.Comparing in laser of the present invention and the background technology has higher power output and conversion efficiency, and volume is little, stable performance, cost are low.
(4) description of drawings
Fig. 1 is the light channel structure schematic diagram of LD end-pumped laser of the present invention, and Fig. 2 is the light channel structure schematic diagram of LD side-pumped laser of the present invention.
Wherein: 1.LD end pumping module, 2. optical fiber, 3. coupled lens group, 4. Effect of Back-Cavity Mirror, 5. gain medium, 6. Q-modulating device, 7. Raman crystal, 8. frequency-doubling crystal, 9. outgoing mirror, 10.LD side pumping module, 11. cooling devices.
(5) embodiment
Embodiment 1:
The embodiment of the invention 1 comprises laser diode LD end pumping source, resonant cavity as shown in Figure 1; Resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 9, and gain medium 5 selects neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, and Q-modulating device 6 is acousto-optic Q modulation devices, and Raman medium 7 selects strontium tungstate SrWO
4Crystal, frequency-doubling crystal 8 is selected the potassium titanium oxide phosphate ktp crystal for use.Place gain medium 5, acousto-optic Q modulation device 6, Raman medium 7 and frequency-doubling crystal 8 in the resonant cavity successively; Gain medium 5, acousto-optic Q modulation device 6, Raman medium 7 and frequency-doubling crystal 8 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal.
Pumping source comprises LD end pumping module 1, optical fiber 2 and coupled lens 3, and pump light enters resonant cavity through optical fiber 2 and coupled lens 3; The output wavelength of pumping source is 808nm, and Maximum pumping is 30W, and the fiber core radius of optical fiber is 400 μ m, and numerical aperture is 0.22.The chamber of resonant cavity is long to be 15cm.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Raman medium 7 strontium tungstate SrWO
4Raman crystal is of a size of 4 * 4 * 35mm
3, both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, strontium tungstate SrWO
4The effect of Raman crystal is that fundamental frequency light is converted to Raman light.
Frequency-doubling crystal 8 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); In order to satisfy the phase-matching condition of crystal when 20 spend, along θ=68.7 degree, φ=0 degree angle is cut with ktp crystal for we.
Effect of Back-Cavity Mirror 4 is a concave mirror, and radius of curvature is 3000mm, is coated with the anti-reflection film of 808nm wavelength and the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
The workflow of laser: the pump light that LD end pumping module 1 is sent the 808nm wavelength enters in the neodymium-doped yttrium-aluminum garnet Nd:YAG crystal through optical fiber 2 and coupled lens 3, and when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is through strontium tungstate SrWO
4Crystal because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, is converted to the 590nm gold-tinted at KTP frequency-doubling crystal 8 places owing to frequency-doubled effect, and by outgoing mirror 9 outputs.
Embodiment 2:
The embodiment of the invention 2 comprises laser diode LD side pumping module 10, resonant cavity as shown in Figure 2; Resonant cavity is made up of Effect of Back-Cavity Mirror 4 and outgoing mirror 9, and gain medium 5 selects neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, and Q-modulating device 6 is acousto-optic Q modulation devices, and Raman medium 7 selects barium tungstate BaWO
4Crystal, frequency-doubling crystal 8 is selected the potassium titanium oxide phosphate ktp crystal for use.Place LD side pump module 10 and gain medium 5, acousto-optic Q modulation device 6, Raman medium 7 barium tungstate BaWO in the resonant cavity successively
4Crystal and frequency-doubling crystal 8KTP; Above-mentioned crystal on side face all surrounds with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, is used for reducing temperature to crystal.
Described laser diode LD side pumping module 10 is that near the 808nm LD side-pump laser head (peak power 180W), driving power and water-cooled case formed by wavelength.The chamber of resonant cavity is long to be 15cm.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Frequency-doubling crystal 8 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); Is 20 phase-matching conditions when spending in order to satisfy crystal in temperature, we with ktp crystal along θ=68.7 degree, φ=0 degree angle cutting.
Effect of Back-Cavity Mirror 4 is thin convex lens, and radius of curvature is 800mm, is coated with the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
The workflow of laser: the pump light that the 808nm wavelength is sent in LD profile pump source is coupled in the neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, and when acousto-optic Q modulation switch 6 cut out, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is through barium tungstate BaWO
4During crystal,, be converted to the 590nm gold-tinted owing to frequency-doubled effect at KTP frequency-doubling crystal 8 places because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, and by outgoing mirror 9 outputs.
The volume of laser head is about 10cm * 10cm * 20cm, and, good stability little with the volume of comparing in the background technology, cost are low, and the power output of gold-tinted can reach 3.1W, and 2 hours unsteadiness are less than 0.5%, M
2Beam quality factor 1.68.
Embodiment 3:
Identical with embodiment 1, be that described Raman crystal 7 is vanadic acid gadolinium GdVO
4Crystal is of a size of 3 * 3 * 15mm
3, along a direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal doping concentration are 1.5-at.%.Place gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, acousto-optic Q modulation device 6, Raman medium 7 vanadic acid gadolinium GdVO in the resonant cavity successively
4Crystal and frequency-doubling crystal 8 potassium titanium oxide phosphate ktp crystals, the chamber of resonant cavity is long to be 13cm.
Embodiment 4:
Identical with embodiment 1, be described gain medium 5 for mixing ytterbium yttrium-aluminium-garnet Yb:YAG crystal, be of a size of 5 * 5 * 1mm
3, doping content is 1-at.%; Raman crystal 7 is wolframic acid lutetium potassium KLu (WO
4)
2Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place gain medium 5 in the resonant cavity successively and mix ytterbium yttrium-aluminium-garnet Yb:YAG crystal, Raman crystal 7 wolframic acid lutetium potassium KLu (WO
4)
2, acousto-optic Q modulation device 6 and frequency-doubling crystal 8 potassium titanium oxide phosphate KTP, the chamber of resonant cavity is long to be 15cm.
Embodiment 5:
Identical with embodiment 1, be described gain medium 5 are Nd-doped yttrium vanadate Nd:YVO
4Crystal, its doping content is 0.5%, is of a size of 3mm * 3mm * 8mm, the both ends of the surface of gain medium are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm and 1000nm-1200nm.Described Raman crystal 7 is wolframic acid lutetium potassium KLu (WO
4)
2Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place gain medium 5, acousto-optic Q modulation device 6, Raman crystal 7 and frequency-doubling crystal 8 in the resonant cavity successively, the chamber of resonant cavity is long to be 16cm.
Embodiment 6:
Identical with embodiment 1, be that described Raman crystal 7 is strontium tungstate SrWO
4Crystal is of a size of 4 * 4 * 35mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place gain medium 5, acousto-optic Q modulation device 6, Raman crystal 7 and frequency-doubling crystal 8 in the resonant cavity successively, the chamber of resonant cavity is long to be 12cm.Q-switch is an acousto-optic Q modulation, and modulating frequency is 20KHz.
Embodiment 7:
Identical with embodiment 1, be that described Raman crystal 7 is lead tungstate PbWO
4Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The chamber of resonant cavity is long to be 13cm; Q-modulating device 6 is Cr
4+: YAG saturable absorber passive Q-switch, its small-signal transmitance is 90%; The both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place gain medium 5, acousto-optic Q modulation device 6, Raman crystal 7 and frequency-doubling crystal 8 in the resonant cavity successively.
Embodiment 8:
Identical with embodiment 2, be that described Raman crystal 7 is wolframic acid gadolinium potassium KGd (WO
4)
2Crystal is of a size of 4 * 4 * 35mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Described frequency-doubling crystal 8 is three lithium borate lbo crystals, and the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The chamber of described resonant cavity is long for 17cm, places LD side pump module 10 and gain medium 5, Raman crystal 7, acousto-optic Q modulation device 6 and frequency-doubling crystal 8 in the resonant cavity successively.Q-switch is an acousto-optic Q modulation, and modulating frequency is 10KHz.
Embodiment 9:
Identical with embodiment 1, be described gain medium 5 are bonding Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4), its doping content is 0.5%, is of a size of 3mm * 3mm * 3mm (YVO
4)+3mm * 3mm * 8mm (Nd:YVO
4), the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm wavelength and 1000nm-1200nm wave band.Described Raman crystal 7 is barium nitrate Ba (NO
3)
2Crystal, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The chamber of resonant cavity is long for 13cm, places gain medium 5 bonding Nd-doped yttrium vanadates (YVO4/Nd:YVO4), acousto-optic Q modulation device 6, Raman crystal 7 barium nitrate Ba (NO in the resonant cavity successively
3)
2Crystal and frequency-doubling crystal 8 potassium titanium oxide phosphate ktp crystals.
Example 10:
Identical with embodiment 1, be described gain medium 5 for mixing ytterbium yttrium-aluminium-garnet Yb:YAG crystal, be of a size of 5 * 5 * 1mm
3, doping content is 5-at.%; Raman crystal 7 is vanadic acid gadolinium GdVO
4Crystal is of a size of 3 * 3 * 15mm
3, along a direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The output wavelength of pumping source is 940nm, and the fiber core radius of optical fiber is 100 μ m.Place gain medium 5 in the resonant cavity successively and mix ytterbium yttrium-aluminium-garnet Yb:YAG crystal, acousto-optic Q modulation device 6, Raman medium 7 vanadic acid gadolinium GdVO
4Crystal and frequency-doubling crystal 8 potassium titanium oxide phosphate ktp crystals, the chamber of resonant cavity is long to be 13cm.
All crystals among above-mentioned ten embodiment all passes through water-cooling apparatus 11 temperature controls, and water temperature is 20 degree.
Claims (10)
1. an inner chamber Raman frequency doubling completely solid yellow laser comprises laser diode LD pumping source, resonant cavity; Resonant cavity is made up of Effect of Back-Cavity Mirror and outgoing mirror, it is characterized in that placing in the resonant cavity gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal; Gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the LD pumping source is coupled into gain medium and converts fundamental frequency light to, when the fundamental frequency light that produces passes through Raman crystal, stimulated Raman scattering takes place under the Raman effect effect produce Raman light, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and exported by outgoing mirror.
2. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pump module, cooling device.
3. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described gain medium under LD end pumping situation, and two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
4. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1, it is characterized in that described resonant cavity in LD end pumping situation cavity of resorption Q-switch and the relative position of Raman crystal can change mutually; The side pump module under LD profile pump situation in the resonant cavity and the relative position of gain medium, Q-switch and Raman crystal can be changed mutually.
5. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described gain medium can be a kind of in neodymium-doped or the following all crystal of mixing ytterbium: yttrium-aluminium-garnet, vanadic acid yttrium, vanadic acid gadolinium, vanadic acid lutetium, lithium yttrium fluoride, yttrium aluminate, Gd-Ga garnet, wolframic acid gadolinium potassium; Also can be a kind of in bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet, the vanadic acid yttrium/Nd-doped yttrium vanadate crystal.
6. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber.
7. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described Raman crystal can be tungstates, vanadic acid salt, Nitrates, a kind of in the iodates; The both ends of the surface of Raman medium are all plated the anti-reflection film of 1000nm-1200nm wave band.
8. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described frequency-doubling crystal can be a kind of among potassium titanium oxide phosphate KTP, the three lithium borate LBO; The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.
9. as claim 1 or 5 described inner chamber Raman frequency doubling completely solid yellow lasers, the doping content that it is characterized in that described gain medium is between the 0.05-at.% to 3-at.% when neodymium-doped; Be between the 0.05-at.% to 10-at.% when mixing ytterbium.
10. inner chamber Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wavelength and 1000nm-1200nm wave band when the LD end pumping reflectivity is greater than 90% reflectance coating; The reflectivity that is coated with the 1000nm-1200nm wave band when the LD profile pump is greater than 90% reflectance coating; Outgoing mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has transmissivity greater than 80% to gold-tinted.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623886A (en) * | 2012-04-06 | 2012-08-01 | 山东大学 | All solid-state Raman laser based on BaTeMo2O9 crystal |
| CN102623885A (en) * | 2012-04-06 | 2012-08-01 | 山东大学 | All solid Raman self frequency doubling yellow laser of BaTeMo2O9 crystal |
| CN106058632A (en) * | 2016-07-15 | 2016-10-26 | 暨南大学 | Pulse-energy-adjustable passive Q-switched Raman laser system based on bonding crystals |
| CN106229806A (en) * | 2016-09-27 | 2016-12-14 | 天津大学 | The tunable alaxadrite laser of Raman gold-tinted pumping |
| CN106374329A (en) * | 2016-12-01 | 2017-02-01 | 江苏师范大学 | Cross-polarization dual-wavelength synchronous resonation mode-locked laser |
| CN109286127A (en) * | 2018-12-14 | 2019-01-29 | 烟台大学 | High-power 577nm-579nm solid Roman Yellow light laser |
| CN109873292A (en) * | 2019-03-12 | 2019-06-11 | 天津大学 | The blue light solid state laser device of thulium gain media is mixed in a kind of raman laser inner cavity pumping |
| CN112993735A (en) * | 2019-12-14 | 2021-06-18 | 中国科学院大连化学物理研究所 | High-efficiency blue laser |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623886A (en) * | 2012-04-06 | 2012-08-01 | 山东大学 | All solid-state Raman laser based on BaTeMo2O9 crystal |
| CN102623885A (en) * | 2012-04-06 | 2012-08-01 | 山东大学 | All solid Raman self frequency doubling yellow laser of BaTeMo2O9 crystal |
| CN106058632A (en) * | 2016-07-15 | 2016-10-26 | 暨南大学 | Pulse-energy-adjustable passive Q-switched Raman laser system based on bonding crystals |
| CN106229806A (en) * | 2016-09-27 | 2016-12-14 | 天津大学 | The tunable alaxadrite laser of Raman gold-tinted pumping |
| CN106229806B (en) * | 2016-09-27 | 2019-02-22 | 天津大学 | The tunable alaxadrite laser of Raman yellow light pumping |
| CN106374329A (en) * | 2016-12-01 | 2017-02-01 | 江苏师范大学 | Cross-polarization dual-wavelength synchronous resonation mode-locked laser |
| CN109286127A (en) * | 2018-12-14 | 2019-01-29 | 烟台大学 | High-power 577nm-579nm solid Roman Yellow light laser |
| CN109873292A (en) * | 2019-03-12 | 2019-06-11 | 天津大学 | The blue light solid state laser device of thulium gain media is mixed in a kind of raman laser inner cavity pumping |
| CN112993735A (en) * | 2019-12-14 | 2021-06-18 | 中国科学院大连化学物理研究所 | High-efficiency blue laser |
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