CN101308991A - Coupling cavity Raman frequency doubling completely solid yellow laser - Google Patents
Coupling cavity Raman frequency doubling completely solid yellow laser Download PDFInfo
- Publication number
- CN101308991A CN101308991A CNA2008101380267A CN200810138026A CN101308991A CN 101308991 A CN101308991 A CN 101308991A CN A2008101380267 A CNA2008101380267 A CN A2008101380267A CN 200810138026 A CN200810138026 A CN 200810138026A CN 101308991 A CN101308991 A CN 101308991A
- Authority
- CN
- China
- Prior art keywords
- crystal
- raman
- frequency
- laser
- mirror
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
Disclosed is an all-solid-state double frequency yellow Raman laser device with a coupled cavity, which includes a LD (laser diode) pump source and a resonator. The resonator is composed of a rear cavity mirror, a coupling lens and an output lens; a laser amplifying medium, a Q value adjusting device and a Raman crystal are arranged between the rear mirror and the coupling lens; a frequency doubling crystal is arranged between the coupling lens and the output lens. The temperature of the laser amplifying medium, the Q value adjusting device, the Raman crystal and the frequency doubling crystal is controlled by a cooling device. Compared with prior art, the laser device of the invention has small volume, high output power and high conversion efficiency. Due to the small volume, stable performance and low cost, the laser device can be widely used in laser medical treatment field.
Description
(1) technical field
The present invention relates to a kind of solid state laser, particularly a kind of coupling cavity Raman frequency doubling completely solid yellow laser.
(2) background technology
Laser technology is one of invention of great significance of twentieth century, now has been widely used in every field such as industrial production, communication, information processing, health care, military affairs, culture and education and scientific research.Along with the important breakthrough of semiconductor laser diode technology, solid state laser obtains powerful development, and its application is constantly expanded.The all solid laser that utilizes the LD pumping be a kind of efficient, stable,, the second generation novel solid laser of good beam quality, long-life, compact conformation, what become the laser subject gives priority to one of direction, in space communication, optical fiber communication, atmospheric research, environmental science, medicine equipment, optical image is handled, and high-tech areas such as laser printer have the application prospect that shows unique characteristics.
The laser of yellow band can be treated hemangioma cutis, nevus flammeus, telangiectasis, brandy nose and spider angioma etc., is widely used in the laser medicine field.Gold-tinted laser can be used as sodium beacon light source, at military, meteorological field important application is arranged.Yellow light laser also is widely used in fields such as spectroscopy, information stores, laser radars.At present, the research that produces ruddiness, green glow, blue light by intracavity frequency doubling by the total solidifying laser device of LD pumping is comparative maturity, but, the laser that produces yellow band with the microlaser of LD pumping is than above several wave bands difficulty all, this be because current active ions have that the spectral line of enough big stimulated emission cross sections is feasible can be by direct frequency multiplication generation gold-tinted.
At present, external relevant for the report of solid Yellow light laser.They mainly adopt dual mode to realize: the one, adopt two-beam and method (Intracavity sum-frequency generation of 3.23 W continuous-wave yellow light in an Nd:YAG laser frequently, " Optics Communications ", Vol.255,2005,248-252), two technology that are to use the frequency multiplication Raman light.To have a volume big with frequently method, and power is low, and conversion efficiency is poor, and structural instability is difficult to shortcomings such as realization; The method of frequency multiplication Raman light is than simple with method frequently, and still mostly in the world at present is method (Low threshold, the diode end-pumped Nd of employing cavity external frequency multiplication Raman light
3+: GdVO
4Self-Raman laser, " Optical Materials ", Vol.29,2007,1817-1820) and method (Efficient all-solid-state yellow laser source producing 1.2-W average power, " Optics Letters ", the Vol.24 of intracavity frequency doubling continuous Raman light, 1999,1490-1492; All-solid-state 704mW continuous-waveyellow source based on an intracavity, frequency-doubled crystalline Raman laser, " Optics Letters ", Vol.32,2007,1114-1116).The method of cavity external frequency multiplication Raman light causes shg efficiency poor because the power of Raman light is low outside the chamber, and the gold-tinted power of output is low; The method of intracavity frequency doubling continuous Raman light can not obtain high-power gold-tinted output then because the peak power of fundamental frequency light is low, and the efficient that converts Raman light to is poor.
(3) summary of the invention
For overcoming the defective of prior art, to realize that volume is little, cost is low, power is high, constitutionally stable Yellow light laser, the invention provides a kind of coupling cavity Raman frequency doubling completely solid yellow laser.
A kind of coupling cavity Raman frequency doubling completely solid yellow laser, comprise laser diode (LD) pumping source, resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror, coupling mirror and outgoing mirror, it is characterized in that Effect of Back-Cavity Mirror and middle gain medium, Q-modulating device and the Raman crystal placed of coupling mirror in the resonant cavity, place frequency-doubling crystal in coupling mirror and the outgoing mirror; Gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into gain medium and converts fundamental frequency light to, the fundamental frequency light that produces passes through Raman crystal, because Raman crystal has Raman effect, thereby the generation stimulated Raman scattering produces Raman light, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and exported by outgoing mirror.
Described laser diode LD pumping source can be LD end pumping source, and it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pump module, cooling device.
The Q-switch of described resonant cavity in LD end pumping situation cavity of resorption, the relative position of Raman crystal can be changed mutually; The side pump module under LD profile pump situation in the resonant cavity and the relative position of gain medium, Q-switch and Raman crystal can be changed mutually.
Described gain medium can be a kind of in neodymium-doped (Nd) or the following all crystal of mixing ytterbium (Yb): yttrium-aluminium-garnet (YAG), vanadic acid yttrium (YVO
4), vanadic acid gadolinium (GdVO
4), vanadic acid lutetium (LuVO
4), lithium yttrium fluoride (YLF), yttrium aluminate (YAP), Gd-Ga garnet (GGG), wolframic acid gadolinium potassium (KGd (WO
4)
2) etc.; Also can be bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet (YAG/Nd:YAG), vanadic acid yttrium/Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4) a kind of in the crystal.
The doping content of described gain medium is 0.05-at.% to 3-at.% when neodymium-doped; When mixing ytterbium 0.05-at.% to 10-at.%.
Described gain medium is under LD end pumping situation, and two end face all is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band; Under LD profile pump situation, two end face all is coated with the anti-reflection film of 1000nm-1200nm wave band.
Described Q-modulating device can be a kind of in electric-optically Q-switched device, acousto-optic Q modulation device and the passive Q-adjusted device of saturable absorber; The acousto-optic Q modulation device is made up of radio frequency input unit and adjusting Q crystal, and the both ends of the surface of adjusting Q crystal all are coated with the anti-reflection film of 1000nm-1200nm wave band; Modulating frequency is 1-50KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect; Electric-optically Q-switched device is made up of electrooptic crystal and driving power, utilizes the electro optic effect of crystal, the phase place of passing through laser is wherein produced modulation, and then change polarization state, finishes open and close door process; Saturable absorber is to utilize the exciting of material, transition characteristic, closes the door when being excited to absorb, opens the door during transition downwards, finishes open and close gate control to laser with this.
Described cooling device has dual mode: the recirculated water cooling---crystal on side face all encases with the metal derby that has pipeline, continues to be connected with recirculated cooling water in the pipeline of metal derby, is used for reducing temperature to crystal; Semiconductor refrigerating---crystal on side face is surrounded by the semiconductor refrigerating piece.
Described Raman crystal can be tungstates (KGd (WO
4)
2, BaWO
4, SrWO
4, PbWO
4, KLu (WO
4)
2Deng), vanadic acid salt (YVO
4, GdVO
4Deng), Nitrates (Ba (NO
3)
2Deng), iodates (LiIO
3Deng) in a kind of; The both ends of the surface of Raman medium are all plated the anti-reflection film of 1000nm-1200nm wave band.Raman crystal can effectively improve the performance of laser so as required along different directions and angle cutting.
Described frequency-doubling crystal can be potassium titanium oxide phosphate KTP, three lithium borate LBO etc.The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.Frequency-doubling crystal can cut along different directions and angle according to phase matched and other needs, can effectively improve the performance of laser like this, improves the power output of laser.
Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band when the LD end pumping reflectivity is greater than 90% reflectance coating; The reflectivity that is coated with the 1000nm-1200nm wave band when the LD profile pump is greater than 90% reflectance coating; The both ends of the surface of coupling mirror all are coated with at the 1000nm-1200nm wave band and see through scope greater than 80% transmission film, and its front end face also is coated with near the reflectivity 590nm wavelength greater than 90% reflectance coating (is front end face from the near end of outgoing mirror); Outgoing mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has through scope greater than 80% transmissivity near the gold-tinted the 590nm.
The chamber of described resonant cavity is long to be 5cm-50cm, and the Effect of Back-Cavity Mirror of resonant cavity and the radius of curvature of outgoing mirror can be selected according to actual conditions.
The length of all crystals among the present invention all can be chosen according to specific requirement; The end surface shape of crystal and area can be determined according to the area of beam cross section.
Because Raman effect is the nonlinear effect on three rank, need fundamental frequency light to have higher peak power,, can increase the peak power of fundamental frequency light like this so we use Q-modulating device in laser, thereby improve the conversion efficiency of fundamental frequency light, effectively improved the performance of laser to Raman light.By adopting Q-regulating technique and in the chamber, using frequency-doubling crystal frequency multiplication Raman light, obtained high-power gold-tinted output.Such laser can effectively compress the Yellow light laser volume, can make full use of the high power density of Raman light in the high peak power of fundamental frequency Q impulse and the chamber, improve the stability of laser, reduced cost, and had high average output power and conversion efficiency.
The workflow of laser is as follows: the pump light that the LD pumping source sends is coupled into gain medium, and when the Q-switch of Q-modulating device was closed, pump light transferred the counter-rotating particle to and stores; When Q switching was opened, a large amount of counter-rotating particle moment of saving bit by bit transferred fundamental frequency light to by stimulated radiation; Fundamental frequency light with high peak power is through Raman crystal, because the effect of stimulated Raman scattering transfers Raman light to; Raman light is finished the frequency multiplication process at the frequency-doubling crystal place and is transferred gold-tinted to, and is exported by outgoing mirror.
The present invention has adopted coupling cavity type and new compound mode, adopted Q-regulating technique, and in the chamber, use frequency-doubling crystal frequency multiplication Raman light, make full use of the high power density of Raman light in the high-peak power of fundamental frequency Q impulse and the chamber, and utilized coupling cavity to improve shg efficiency, successfully obtained high-power yellow laser, improved the performance of laser, successfully solve the various shortcomings of above-mentioned laser, provide a kind of new small size, the complete-solid yellow light laser of good stability.Comparing in laser of the present invention and the background technology has higher power output and conversion efficiency, and volume is little, stable performance, cost are low
(4) description of drawings
Fig. 1 is the light channel structure schematic diagram in laser LD end pumping of the present invention source, and Fig. 2 is the light channel structure schematic diagram in laser LD profile pump of the present invention source.
Wherein: 1. laser diode, 2. optical fiber, 3. coupled lens group, 4. Effect of Back-Cavity Mirror, 5. gain medium, 6. Q-modulating device, 7. Raman crystal, 8. coupling mirror, 9. frequency-doubling crystal, 10. outgoing mirror, 11.LD profile pump system, 12. cooling devices.
(5) embodiment
Embodiment 1:
Apparatus of the present invention as shown in Figure 1, comprise laser diode LD pumping source, resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror 4, coupling mirror 8 and outgoing mirror 10, places gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, acousto-optic Q modulation device 6 and Raman medium 7 barium tungstate BaWO in Effect of Back-Cavity Mirror 4 and the coupling mirror 8
4Crystal is placed frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror 8 and the outgoing mirror 10; Gain medium 5, acousto-optic Q modulation device 6, Raman medium 7 and frequency-doubling crystal 9 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal.
Pumping source is the end pumping source, comprises laser diode 1, optical fiber 2 and coupled lens group 3, and pump light enters resonant cavity through optical fiber 2 and coupled lens group 3; The output wavelength of pumping source is 808nm, and Maximum pumping is 30W, and the fiber core radius of optical fiber is 400 μ m, and numerical aperture is 0.22.
The chamber of resonant cavity is long to be 15cm.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Raman medium 7 strontium tungstate SrWO
4Raman crystal is of a size of 4 * 4 * 35mm
3, both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, strontium tungstate SrWO
4The effect of Raman crystal is that fundamental frequency light is converted to Raman light.
Frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); In order to satisfy the phase-matching condition of crystal when 20 spend, along θ=68.7 degree, φ=0 degree angle is cut with ktp crystal for we.
Effect of Back-Cavity Mirror 4 is a concave mirror, and radius of curvature is 3000mm, is coated with the anti-reflection film of 808nm wavelength and the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
The workflow of laser: the pump light that the 808nm wavelength is sent in LD profile pump source 1 is coupled in the neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 5, and when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is through strontium tungstate SrWO
4During crystal 7,, be converted to the 590nm gold-tinted owing to frequency-doubled effect at KTP frequency-doubling crystal 9 places because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, and by outgoing mirror 10 outputs.
Embodiment 2:
Apparatus of the present invention as shown in Figure 2, comprise laser diode LD pumping source, resonant cavity, resonant cavity is made up of Effect of Back-Cavity Mirror 4, coupling mirror 8 and outgoing mirror 10, places gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, acousto-optic Q modulation device 6 and Raman medium 7 barium tungstate BaWO in Effect of Back-Cavity Mirror 4 and the coupling mirror 8
4Crystal is placed frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror and the outgoing mirror; Gain medium 5, acousto-optic Q modulation device 6, Raman medium 7 and frequency-doubling crystal 9 sides all surround with the metal derby that has pipeline, and the pipeline in the metal derby continues to be connected with recirculated cooling water, are used for reducing temperature to crystal.
Described laser diode LD pumping source is the profile pump source, and it is that wavelength is that near the 808nm LD side-pump laser head (peak power 180W), driving power and water-cooled case formed by side pumping module 11.
The chamber of resonant cavity is long to be 15cm.
Acousto-optic Q modulation device 6 is made up of radio frequency input unit and adjusting Q crystal, and the length of adjusting Q crystal is 35mm, and both ends of the surface all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Modulating frequency is 15KHz, by the density of input radio frequency ripple change adjusting Q crystal, sexually revises the purpose of laserresonator threshold value performance period, plays the Q-switch effect.
Frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals are of a size of 3 * 3 * 6mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band, and to the light of 587nm wavelength high saturating (transmitance is greater than 92%); In order to satisfy the phase-matching condition of crystal when 20 spend, along θ=68.7 degree, φ=0 degree angle is cut with ktp crystal for we.
Effect of Back-Cavity Mirror 4 is a concave mirror, and radius of curvature is 3000mm, is coated with the high-reflecting film (reflectivity is greater than 99.5%) of 1000nm-1200nm wave band.
The workflow of laser: the pump light that the 808nm wavelength is sent in LD profile pump source is coupled in the neodymium-doped yttrium-aluminum garnet Nd:YAG crystal 5, and when the Q-switch of acousto-optic Q modulation device 6 was closed, pump light transferred the counter-rotating particle to and stores; When Q opens the light when opening, a large amount of counter-rotating particles of saving bit by bit transfer 1064nm fundamental frequency light to by stimulated radiation moment; Fundamental frequency light with high peak power is through barium tungstate BaWO
4During crystal 7,, be converted to the 590nm gold-tinted owing to frequency-doubled effect at KTP frequency-doubling crystal 9 places because the effect of stimulated Raman scattering transfers the 1180nm Raman light to, and by outgoing mirror 10 outputs.
Embodiment 3:
Identical with embodiment 1, be that described Raman crystal 7 is vanadic acid gadolinium GdVO
4Crystal is of a size of 3 * 3 * 15mm
3, along a direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal doping concentration are 1.5-at.%.Place gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, acousto-optic Q modulation device 6 and Raman medium 7 vanadic acid gadolinium GdVO in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively
4Crystal is placed frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror 8 and the outgoing mirror 10, the chamber of resonant cavity is long to be 13cm.
Embodiment 4:
Identical with embodiment 1, be that described Raman crystal 7 is wolframic acid lutetium potassium KLu (WO
4)
2Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place gain medium 5 neodymium-doped yttrium-aluminum garnet Nd:YAG crystal, Raman crystal 7 wolframic acid lutetium potassium KLu (WO in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively
4)
2Crystal and acousto-optic Q-modulating device 6 are placed frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror 8 and the outgoing mirror 10, the chamber of resonant cavity is long to be 15cm.
Embodiment 5:
Identical with embodiment 1, be described gain medium 5 are Nd-doped yttrium vanadate Nd:YVO
4Crystal, its doping content is 0.5%, is of a size of 3mm * 3mm * 8mm, the both ends of the surface of gain medium are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm and 1000nm-1200nm.Described Raman crystal 7 is wolframic acid lutetium potassium KLu (WO
4)
2Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place gain medium 5, acousto-optic Q modulation device 6 and Raman crystal 7 in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively, place frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror 8 and the outgoing mirror 10, the chamber of resonant cavity is long to be 16cm.
Embodiment 6:
Identical with embodiment 1, be that described Raman crystal 7 is strontium tungstate SrWO
4Crystal is of a size of 4 * 4 * 35mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place gain medium 5, Raman crystal 7 and acousto-optic Q-modulating device 6 in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively, place frequency-doubling crystal 9 three lithium borate lbo crystals in coupling mirror 8 and the outgoing mirror 10, the chamber of resonant cavity is long to be 12cm.Q-switch is an acousto-optic Q modulation, and modulating frequency is 20KHz.
Embodiment 7:
Identical with embodiment 1, be that described Raman crystal 7 is lead tungstate PbWO
4Crystal is of a size of 3 * 3 * 16mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Q-modulating device 6 is Cr
4+: YAG saturable absorber passive Q-switch, its small-signal transmitance is 90%, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Place gain medium 5, acousto-optic Q modulation device 6 and Raman crystal 7 in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively, place frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror 8 and the outgoing mirror 10.The chamber of resonant cavity is long to be 13cm.
Embodiment 8:
Identical with embodiment 2, be that described Raman crystal 7 is wolframic acid gadolinium potassium KGd (WO
4)
2Crystal is of a size of 4 * 4 * 35mm
3, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band; Described frequency-doubling crystal 8 is three lithium borate lbo crystals, and the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place LD side pump module 10 and gain medium 5, Raman crystal 7 and acousto-optic Q-modulating device 6 in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively, place frequency-doubling crystal 9 potassium titanium oxide phosphate ktp crystals in coupling mirror 8 and the outgoing mirror 10.Q-switch is an acousto-optic Q modulation, and modulating frequency is 10KHz.The chamber of resonant cavity is long to be 16cm.
Embodiment 9:
Identical with embodiment 1, be described gain medium 5 are bonding Nd-doped yttrium vanadate (YVO
4/ Nd:YVO
4), its doping content is 0.5%, is of a size of 3mm * 3mm * 3mm (YVO
4)+3mm * 3mm * 8mm (Nd:YVO
4), the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 808nm wavelength and 1000nm-1200nm wave band.Described Raman crystal 7 is barium nitrate Ba (NO
3)
2Crystal, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.Place gain medium 5 bonding Nd-doped yttrium vanadate (YVO in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively
4/ Nd:YVO
4), acousto-optic Q modulation device 6 and Raman crystal 7 barium nitrate Ba (NO
3)
2Crystal is placed frequency-doubling crystal 9 three lithium borate lbo crystals in coupling mirror 8 and the outgoing mirror 10.The chamber of resonant cavity is long to be 13cm.
Example 10:
Identical with embodiment 1, be described gain medium 5 for mixing ytterbium yttrium-aluminium-garnet Yb:YAG crystal, be of a size of 5 * 5 * 1mm
3, doping content is 5-at.%; Raman crystal 7 is vanadic acid gadolinium GdVO
4Crystal is of a size of 3 * 3 * 15mm
3, along a direction of principal axis cutting of physics definition, the both ends of the surface of crystal all are coated with the anti-reflection film (transmitance is greater than 99.8%) of 1000nm-1200nm wave band.The output wavelength of pumping source is 940nm, and the fiber core radius of optical fiber is 100 μ m.Place gain medium 5 in Effect of Back-Cavity Mirror 4 and the coupling mirror 8 successively and mix ytterbium yttrium-aluminium-garnet Yb:YAG crystal, acousto-optic Q modulation device 6 and Raman medium 7 vanadic acid gadolinium GdVO
4Crystal and frequency-doubling crystal 8 potassium titanium oxide phosphate ktp crystals, the chamber of resonant cavity is long to be 13cm.
All crystals among above-mentioned ten embodiment all passes through water-cooling apparatus 12 temperature controls, and water temperature is 20 degree.
Claims (10)
1. coupling cavity Raman frequency doubling completely solid yellow laser, comprise resonant cavity, laser diode LD pumping source, resonant cavity is made up of Effect of Back-Cavity Mirror, coupling mirror and outgoing mirror, it is characterized in that Effect of Back-Cavity Mirror and middle gain medium, Q-modulating device and the Raman crystal placed of coupling mirror in the resonant cavity; Place frequency-doubling crystal in coupling mirror and the outgoing mirror; Gain medium, Q-modulating device, Raman crystal and frequency-doubling crystal carry out temperature control by cooling device to it; The pump light that is produced by the laser diode LD pumping source is coupled into gain medium and converts fundamental frequency light to, the fundamental frequency light that produces passes through Raman crystal, because Raman crystal has Raman effect, thereby stimulated Raman scattering generation Raman light can take place, Raman light is finished the frequency multiplication process in frequency-doubling crystal, produce gold-tinted and exported by outgoing mirror.
2. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that the Q-switch of described resonant cavity in LD end pumping situation cavity of resorption, the relative position of Raman crystal can change mutually; The side pump module under LD profile pump situation in the resonant cavity and the relative position of gain medium, Q-switch and Raman crystal can be changed mutually.
3. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1, it is characterized in that described laser diode LD pumping source can be LD end pumping source, it comprises driving power, laser diode, cooling device, optical fiber and coupled lens group; Also can be LD profile pump source, it comprises driving power, LD side pump module, cooling device.
4. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that the chamber length of described resonant cavity is 5cm-50cm.
5. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described gain medium can be a kind of in neodymium-doped or the following all crystal of mixing ytterbium: yttrium-aluminium-garnet, vanadic acid yttrium, vanadic acid gadolinium, vanadic acid lutetium, lithium yttrium fluoride, yttrium aluminate, Gd-Ga garnet, wolframic acid gadolinium potassium; Also can be a kind of in bonding crystal yttrium-aluminium-garnet/neodymium-doped yttrium-aluminum garnet, the vanadic acid yttrium/Nd-doped yttrium vanadate crystal.
6. as claim 1 or 5 described coupling cavity Raman frequency doubling completely solid yellow lasers, the doping content of described gain medium is 0.05-at.% to 10-at.% when mixing ytterbium; During neodymium-doped 0.05-at.% to 3-at.%.
7. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described gain medium under LD end pumping situation, and two end faces of crystal all are coated with the anti-reflection film to 808nm wavelength and 1000nm-1200nm wave band; Under LD profile pump situation, two end faces of crystal all are coated with the anti-reflection film to the 1000nm-1200nm wave band.
8. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described Raman crystal can be a kind of in tungstates, vanadic acid salt, Nitrates, all crystal of iodates; The both ends of the surface of Raman crystal are all plated the anti-reflection film of 1000nm-1200nm wave band.
9. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that described frequency-doubling crystal can be a kind of in potassium titanium oxide phosphate KTP, the three lithium borate lbo crystals; The two ends of frequency-doubling crystal are coated with the anti-reflection film of 1000nm-1200nm wave band.
10. coupling cavity Raman frequency doubling completely solid yellow laser as claimed in claim 1 is characterized in that Effect of Back-Cavity Mirror in the described resonant cavity is coated with the anti-reflection film of pump light wave band and 1000nm-1200nm wave band when the LD end pumping reflectivity is greater than 90% reflectance coating; The reflectivity that is coated with the 1000nm-1200nm wave band when the LD profile pump is greater than 90% reflectance coating; The both ends of the surface of coupling mirror all are coated with at the 1000nm-1200nm wave band and see through scope greater than 80% transmission film, and its front end face also is coated with near the reflectivity 590nm wavelength greater than 90% reflectance coating; Outgoing mirror is coated with at 1000nm-1200nm wave band reflectivity greater than 90% reflectance coating, and this film has through scope greater than 80% transmissivity near the gold-tinted the 590nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101380267A CN101308991A (en) | 2008-06-30 | 2008-06-30 | Coupling cavity Raman frequency doubling completely solid yellow laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008101380267A CN101308991A (en) | 2008-06-30 | 2008-06-30 | Coupling cavity Raman frequency doubling completely solid yellow laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101308991A true CN101308991A (en) | 2008-11-19 |
Family
ID=40125271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008101380267A Pending CN101308991A (en) | 2008-06-30 | 2008-06-30 | Coupling cavity Raman frequency doubling completely solid yellow laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101308991A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101950917A (en) * | 2010-08-25 | 2011-01-19 | 中国科学院上海光学精密机械研究所 | All-solid-state 455nm pulse laser based on neodymium-doped lithium lutetium fluoride crystal |
| CN102044839A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Bi-wavelength transition stimulated Raman sum frequency laser wavelength conversion equipment |
| CN102185249A (en) * | 2011-04-13 | 2011-09-14 | 山东大学 | 555-nanometer laser all-solid-state laser |
| CN101485920B (en) * | 2009-02-09 | 2013-03-06 | 深圳先进技术研究院 | Laser therapy device |
| CN103830846A (en) * | 2012-11-23 | 2014-06-04 | 苏州生物医学工程技术研究所 | Intracavity frequency-multiplication all-solid Raman yellow-orange-laser skin vascular lesion therapeutic instrument |
| CN104092091A (en) * | 2014-06-30 | 2014-10-08 | 清华大学 | Self-Raman controllable multi-wavelength laser |
| CN106684674A (en) * | 2017-02-13 | 2017-05-17 | 天津大学 | Two-crystal compound gain inner cavity Raman yellow light laser |
| CN106913961A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院苏州生物医学工程技术研究所 | Venule vascular lesion therapeutic equipment |
| CN109873292A (en) * | 2019-03-12 | 2019-06-11 | 天津大学 | The blue light solid state laser device of thulium gain media is mixed in a kind of raman laser inner cavity pumping |
| CN110048300A (en) * | 2019-04-29 | 2019-07-23 | 中国科学院福建物质结构研究所 | Laser based on phosphoric acid gadolinium crystal |
| CN113078547A (en) * | 2021-03-30 | 2021-07-06 | 电子科技大学 | Single-frequency high-power tunable short-cavity laser |
| CN113346349A (en) * | 2021-05-31 | 2021-09-03 | 中国科学院上海光学精密机械研究所 | High repetition frequency intracavity frequency doubling pulse Raman laser |
-
2008
- 2008-06-30 CN CNA2008101380267A patent/CN101308991A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101485920B (en) * | 2009-02-09 | 2013-03-06 | 深圳先进技术研究院 | Laser therapy device |
| CN101950917A (en) * | 2010-08-25 | 2011-01-19 | 中国科学院上海光学精密机械研究所 | All-solid-state 455nm pulse laser based on neodymium-doped lithium lutetium fluoride crystal |
| CN102044839A (en) * | 2010-11-18 | 2011-05-04 | 苏州生物医学工程技术研究所 | Bi-wavelength transition stimulated Raman sum frequency laser wavelength conversion equipment |
| CN102185249A (en) * | 2011-04-13 | 2011-09-14 | 山东大学 | 555-nanometer laser all-solid-state laser |
| CN102185249B (en) * | 2011-04-13 | 2012-07-04 | 山东大学 | 555-nanometer laser all-solid-state laser |
| CN103830846A (en) * | 2012-11-23 | 2014-06-04 | 苏州生物医学工程技术研究所 | Intracavity frequency-multiplication all-solid Raman yellow-orange-laser skin vascular lesion therapeutic instrument |
| CN104092091A (en) * | 2014-06-30 | 2014-10-08 | 清华大学 | Self-Raman controllable multi-wavelength laser |
| CN104092091B (en) * | 2014-06-30 | 2016-11-16 | 清华大学 | From Raman controllable multiple-wavelength laser |
| CN106684674A (en) * | 2017-02-13 | 2017-05-17 | 天津大学 | Two-crystal compound gain inner cavity Raman yellow light laser |
| CN106913961A (en) * | 2017-04-14 | 2017-07-04 | 中国科学院苏州生物医学工程技术研究所 | Venule vascular lesion therapeutic equipment |
| CN109873292A (en) * | 2019-03-12 | 2019-06-11 | 天津大学 | The blue light solid state laser device of thulium gain media is mixed in a kind of raman laser inner cavity pumping |
| CN110048300A (en) * | 2019-04-29 | 2019-07-23 | 中国科学院福建物质结构研究所 | Laser based on phosphoric acid gadolinium crystal |
| CN110048300B (en) * | 2019-04-29 | 2020-04-07 | 中国科学院福建物质结构研究所 | Laser based on gadolinium phosphate crystal |
| CN113078547A (en) * | 2021-03-30 | 2021-07-06 | 电子科技大学 | Single-frequency high-power tunable short-cavity laser |
| CN113346349A (en) * | 2021-05-31 | 2021-09-03 | 中国科学院上海光学精密机械研究所 | High repetition frequency intracavity frequency doubling pulse Raman laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101308991A (en) | Coupling cavity Raman frequency doubling completely solid yellow laser | |
| CN101308993A (en) | Inner chamber Raman frequency doubling completely solid yellow laser | |
| CN101299512A (en) | Self Raman multiple frequency complete-solid yellow light laser | |
| CN103618205B (en) | A kind of full-solid-state single longitudinal mode yellow light laser | |
| CN103996968B (en) | A kind of compound cavity configuration from Raman Yellow light laser | |
| CN106229806B (en) | The tunable alaxadrite laser of Raman yellow light pumping | |
| CN102761051A (en) | Small continuous wave safety raman laser for human eye | |
| CN102208745A (en) | Miniaturized passive Q-switching eye-safe Raman laser | |
| CN103887698A (en) | Efficient singular-pump-source and two-end-symmetric type pump laser | |
| CN103500911A (en) | Multipoint vertical surface emitting terahertz parametric oscillator and application thereof | |
| CN101202412B (en) | Solid laser | |
| CN106684674A (en) | Two-crystal compound gain inner cavity Raman yellow light laser | |
| CN101242076A (en) | A KTA crystal full solid Raman laser | |
| CN105048270A (en) | Laser amplifier based on lithium niobate crystals and application thereof | |
| CN101304152A (en) | Coupled resonator self-Raman multiple frequency complete solid yellow light laser | |
| Ma et al. | Langasite electro-optic Q-switched 2μm laser with high repetition rates and reduced driven voltages | |
| CN201149952Y (en) | Self Raman multiple frequency solid yellow light laser | |
| CN103151699A (en) | 535nm all-solid-state frequency doubled laser | |
| CN201234055Y (en) | Coupling cavity type Raman frequency doubling completely solid yellow light laser | |
| CN102570268A (en) | Intermediate infrared laser | |
| CN201234058Y (en) | Inner chamber type Raman frequency doubling completely solid yellow laser | |
| CN201234057Y (en) | Self-Raman multiple frequency complete solid yellow light laser | |
| CN201234056Y (en) | Folding cavity self-raman frequency doubling completely solid yellow laser | |
| CN101159364A (en) | LD terminal pump Nd:YAG/SrWO4/KTP yellow light laser | |
| CN109286127A (en) | High-power 577nm-579nm solid Roman Yellow light laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20081119 |