CN110600986A - High repetition frequency 905nm Q-switched microchip laser - Google Patents
High repetition frequency 905nm Q-switched microchip laser Download PDFInfo
- Publication number
- CN110600986A CN110600986A CN201910984303.4A CN201910984303A CN110600986A CN 110600986 A CN110600986 A CN 110600986A CN 201910984303 A CN201910984303 A CN 201910984303A CN 110600986 A CN110600986 A CN 110600986A
- Authority
- CN
- China
- Prior art keywords
- laser
- switched
- cavity mirror
- repetition frequency
- high repetition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/483—Details of pulse systems
- G01S7/484—Transmitters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/102—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation
- H01S3/1022—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping
- H01S3/1024—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the active medium, e.g. by controlling the processes or apparatus for excitation by controlling the optical pumping for pulse generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
- H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Computer Networks & Wireless Communication (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Lasers (AREA)
Abstract
The invention discloses a high repetition frequency 905nm Q-switched microchip laser, which comprises a semiconductor pumping source, a coupling system, a first cavity mirror, a gain medium, a Q-switched crystal and a second cavity mirror which are sequentially arranged, wherein pumping light emitted by the pumping source enters the gain medium through the coupling system and the first cavity mirror, the light excited by the gain medium is partially absorbed by the Q-switched crystal, and Q-switched pulse laser oscillation output is formed in a laser cavity formed by the first cavity mirror and the second cavity mirror.
Description
Technical Field
The invention relates to the technical field of laser detection devices, in particular to a high repetition frequency 905nm Q-switched microchip laser.
Background
The working principle of the laser radar is as follows: and emitting laser to the detection target, then reflecting the laser by the target, and detecting the reflected light by a radar detector to obtain information such as the distance, the angle, the height, the shape and the like of the target. At present, most of laser radars use a TOF method for detection, and the detection capability of the laser radars has a great relationship with the quality of a laser beam emitted by the laser radars. At present, most of laser radars use a 905nm semiconductor laser as a transmitting light source, and because the M square factor of the semiconductor laser in the slow axis direction is far greater than the diffraction limit, the quality of the emitted laser beams is poor, and the detection capability of the laser radars is greatly limited. The common passive Q-switched solid laser has the problem of low repetition frequency.
Disclosure of Invention
Based on the state of the art, the present invention aims to provide a high repetition frequency 905nm Q-switched microchip laser.
In order to achieve the technical purpose, the invention adopts the technical scheme that:
high repetition frequency 905nm Q-switched microchip laser, it includes setting up in proper order:
the pumping source is used for providing pumping light, and the pumping adopts a pulse pumping mode;
a coupling system for coupling pump light into the laser cavity;
a first cavity mirror;
the gain medium is used for generating required 905nm laser radiation and is a titanium-doped sapphire crystal;
the Q-switched crystal is used for generating required Q-switched pulses and is graphene or Cr: YAG or Cr: YSO or V: YAG;
a second cavity mirror is arranged on the second cavity mirror,
and a laser resonant cavity is formed between the first cavity mirror and the second cavity mirror and is used for forming oscillation output by 905nm laser.
Further, the device also comprises a plano-concave lens which is arranged behind the second cavity mirror or between the coupling system and the first cavity mirror.
Further, the gain medium and the Q-switched crystal are glued into an integral structure.
Furthermore, the first cavity mirror is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror is plated with a partial reflection film corresponding to the working wavelength.
As a preferable implementation form of the first cavity mirror and the second cavity mirror, further, the first cavity mirror is directly plated on the end surface of the gain medium close to the first cavity mirror, and the second cavity mirror is directly plated on the end surface of the Q-switched crystal close to the second cavity mirror.
Furthermore, the wavelength of the pumping light of the pumping source is 400-600 nm.
Further, the pumping source is a semiconductor laser or a solid laser.
Furthermore, the coupling system is composed of more than one lens, and an antireflection film which is adaptive to the wavelength of the pump light emitted by the pump source is plated on the end face of the lens.
Further, the gain medium can also be Cr: LiSAF or Cr: LiSGaF or Cr: LiCFA.
Further, the output laser wavelength can be any wavelength of the gain medium titanium-doped sapphire emission spectrum 600-1100 nm.
As an extension of this solution, on the basis of the above, the gain medium may be placed after the Q-switched crystal.
By adopting the technical scheme, compared with the prior art, the laser radar has the beneficial effects that the pulse pumping mode, the titanium-doped sapphire crystal with short upper energy level service life as a gain medium and the saturable absorber with short recovery time as a Q-switched crystal are adopted, so that the repetition frequency of the output 905nm laser can be 100kHz ~ 2MHz, the repetition frequency is stable and adjustable, the beam quality is greatly improved, and the M square factor is close to the diffraction limit, thereby improving the detection capability of the laser radar.
Drawings
The invention will be further elucidated with reference to the drawings and the detailed description:
FIG. 1 is a schematic diagram of an embodiment 1 of a high repetition frequency 905nm Q-switched microchip laser according to the present invention;
FIG. 2 is a schematic diagram of an embodiment 2 of a high repetition frequency 905nm Q-switched microchip laser of the present invention;
FIG. 3 shows an embodiment 3 of a high repetition frequency 905nm Q-switched microchip laser.
Detailed Description
Example 1
As shown in fig. 1, the present invention includes a pump source 101, a coupling system 102, a first cavity mirror 103, a gain medium 104, a Q-switched crystal 105 and a second cavity mirror 106, which are sequentially arranged, and the gain medium 104 and the Q-switched crystal 105 are optically glued into an integral structure.
Wherein, the gain medium 104 is a titanium-doped sapphire crystal; the first cavity mirror 103 is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror 106 is plated with a partial reflection film corresponding to the working wavelength.
In addition, the first cavity mirror 103 is directly plated on the end surface of the gain medium 104 close to the gain medium, and the second cavity mirror 106 is directly plated on the end surface of the Q-switched crystal 105 close to the gain medium.
The pump light emitted by the pump source 101 passes through the coupling system 102, wherein the coupling system 102 is formed by one or more lenses, an antireflection film with a wavelength corresponding to the pump light emitted by the pump source 101 is coated on an end surface of the coupling system 102, and the pump light coupled by the coupling system 102 passes through the first cavity mirror 103, enters the gain medium 104, and is absorbed by the gain medium 104.
After the pump light is absorbed by the gain medium 104, the population of the gain medium 104 is inverted, the population is gathered to the upper level and generates laser radiation, the gain medium 104 and the Q-switched crystal 105 are optically glued together, the initial laser radiation is absorbed by the Q-switched crystal 105, when the Q-switched crystal 105 is absorbed to be saturated, the particles at the upper level of the gain medium 104 rapidly transit to the lower level, laser oscillation is formed in a laser cavity formed by the first cavity mirror 103 and the second cavity mirror 106, and finally pulse laser is output from the second cavity mirror 106.
Example 2
As shown in fig. 2, the present invention includes a pump source 201, a coupling system 202, a first cavity mirror 203, a gain medium 204, a Q-switched crystal 205, a second cavity mirror 206 and a plano-concave lens 207, which are sequentially disposed, wherein the gain medium 204 and the Q-switched crystal 205 are optically glued into an integral structure, and the second cavity mirror 206 is plated on a concave surface of the plano-concave lens 207.
The structure of the laser in this embodiment is substantially similar to that described in embodiment 1, except that the second cavity mirror 206 is plated on the concave surface of the plano-concave lens 207, and other structures and optical paths are the same as those described in embodiment 1, and thus are not described again.
Example 3
As shown in fig. 3, the present invention includes a pump source 301, a coupling system 302, a first cavity mirror 303, a gain medium 304, a Q-switched crystal 305, a second cavity mirror 306, and a plano-concave lens 307, which are sequentially disposed, wherein the gain medium 304 and the Q-switched crystal 305 are optically glued into an integral structure, and the first cavity mirror 303 is plated on a concave surface of the plano-concave lens 307.
The structure of the laser in this embodiment is substantially similar to that described in embodiment 1, except that the first cavity mirror 303 is plated on the concave surface of the plano-concave lens 307, and other structures and optical paths are the same as those described in embodiment 1, and thus are not described again.
The foregoing is directed to embodiments of the present invention, and equivalents, modifications, substitutions and variations such as will occur to those skilled in the art, which fall within the scope and spirit of the appended claims.
Claims (10)
1. High repetition frequency 905nm transfers Q microchip laser, its characterized in that: it includes that set gradually:
the pumping source is used for providing pumping light, and the pumping adopts a pulse pumping mode;
a coupling system for coupling pump light into the laser cavity;
a first cavity mirror;
the gain medium is used for generating required 905nm laser radiation and is a titanium-doped sapphire crystal;
the Q-switched crystal is used for generating required Q-switched pulses and is graphene or Cr: YAG or Cr: YSO or V: YAG;
a second cavity mirror is arranged on the second cavity mirror,
and a laser resonant cavity is formed between the first cavity mirror and the second cavity mirror and is used for forming oscillation output by 905nm laser.
2. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: it also includes a plano-concave lens disposed behind the second cavity mirror or between the coupling system and the first cavity mirror.
3. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the gain medium and the Q-switched crystal are glued into an integral structure; the first cavity mirror is plated with an antireflection film corresponding to the pumping wavelength and a total reflection film corresponding to the working wavelength, and the second cavity mirror is plated with a partial reflection film corresponding to the working wavelength.
4. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the first cavity mirror is directly plated on the end face of the gain medium close to the gain medium, and the second cavity mirror is directly plated on the end face of the Q-switched crystal close to the Q-switched crystal.
5. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the wavelength of the pumping light of the pumping source is 400-600 nm.
6. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the pumping source is a semiconductor laser or a solid laser.
7. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the coupling system is composed of more than one lens, and an antireflection film which is adaptive to the wavelength of the pump light emitted by the pump source is plated on the end face of the lens.
8. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the gain medium can also be Cr: LiSAF or Cr: LiSGaF or Cr: LiCFF.
9. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: the output laser wavelength can be any wavelength of 600 nm-1100 nm of the emission spectrum of the titanium-doped sapphire of the gain medium.
10. The high repetition frequency 905nm Q-switched microchip laser of claim 1, wherein: and placing the gain medium behind a Q-switched crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910984303.4A CN110600986A (en) | 2019-10-16 | 2019-10-16 | High repetition frequency 905nm Q-switched microchip laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910984303.4A CN110600986A (en) | 2019-10-16 | 2019-10-16 | High repetition frequency 905nm Q-switched microchip laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110600986A true CN110600986A (en) | 2019-12-20 |
Family
ID=68867616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910984303.4A Pending CN110600986A (en) | 2019-10-16 | 2019-10-16 | High repetition frequency 905nm Q-switched microchip laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110600986A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854658A (en) * | 2019-12-19 | 2020-02-28 | 福建海创光电有限公司 | High repetition frequency 1.5um human eye safety Q-switched microchip laser |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202111365U (en) * | 2011-04-22 | 2012-01-11 | 上海高意激光技术有限公司 | Passively Q-Switched Microchip Laser |
| CN202308764U (en) * | 2011-11-14 | 2012-07-04 | 北京工业大学 | Passive Q-switched microchip laser |
| CN104466654A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Pulse pumping passive Q-switched output single pulse laser device |
| CN109038202A (en) * | 2018-09-18 | 2018-12-18 | 深圳市杰普特光电股份有限公司 | Controllable passive Q-adjusted green (light) laser |
| CN208368938U (en) * | 2018-07-12 | 2019-01-11 | 福建海创光电有限公司 | A kind of Q-switched laser of semiconductor laser pumping |
-
2019
- 2019-10-16 CN CN201910984303.4A patent/CN110600986A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202111365U (en) * | 2011-04-22 | 2012-01-11 | 上海高意激光技术有限公司 | Passively Q-Switched Microchip Laser |
| CN202308764U (en) * | 2011-11-14 | 2012-07-04 | 北京工业大学 | Passive Q-switched microchip laser |
| CN104466654A (en) * | 2014-12-29 | 2015-03-25 | 中国科学院半导体研究所 | Pulse pumping passive Q-switched output single pulse laser device |
| CN208368938U (en) * | 2018-07-12 | 2019-01-11 | 福建海创光电有限公司 | A kind of Q-switched laser of semiconductor laser pumping |
| CN109038202A (en) * | 2018-09-18 | 2018-12-18 | 深圳市杰普特光电股份有限公司 | Controllable passive Q-adjusted green (light) laser |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110854658A (en) * | 2019-12-19 | 2020-02-28 | 福建海创光电有限公司 | High repetition frequency 1.5um human eye safety Q-switched microchip laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN211655309U (en) | Laser and laser radar including the same | |
| CN109950784B (en) | Laser and laser radar | |
| US8532151B2 (en) | Passively Q-switched microlaser | |
| CN110854658A (en) | High repetition frequency 1.5um human eye safety Q-switched microchip laser | |
| CN108181710B (en) | Sodium beacon transmitting telescope with complex amplitude modulation | |
| CN108845331A (en) | A kind of Airborne Lidar examining system | |
| CN110286386A (en) | A kind of multi-line laser radar system | |
| CN110932075B (en) | Dual-wavelength pulse pair laser output method and laser | |
| CN111244745A (en) | High repetition frequency 1.5um human eye safety Q-switched microchip laser | |
| US20230231361A1 (en) | Miniaturized master oscillator power-amplifier structure diode-pumped solid-state laser | |
| CN211556411U (en) | High repetition frequency 1.5um human eye safety Q-switched microchip laser | |
| CN110600986A (en) | High repetition frequency 905nm Q-switched microchip laser | |
| US4355893A (en) | Eye-safe laser cloud height rangefinder | |
| CN101276984A (en) | Micro-chip laser with safety laser pulse output to human eye | |
| WO2023160570A1 (en) | Optical fiber laser, laser radar, optical power adjustment method, and storage medium | |
| CN109256666A (en) | The Fe of non-chain pulsed HF laser pump (ing)2+: ZnSe laser | |
| CN108767649A (en) | Disresonance subnanosecond pulse laser | |
| CN210201153U (en) | Medium-long wave infrared laser | |
| CN110649459B (en) | Active lighting beacon system based on alkali metal vapor laser | |
| CN108899753B (en) | End-face uniform pumping solid laser | |
| CN113097852A (en) | Laser, lidar comprising same and method of scanning using lidar | |
| CN103166098B (en) | L-shaped optical pump gas terahertz laser resonant cavity using quartz crystal wafer as beam splitting wafer, and laser device with resonant cavity | |
| CN117117612B (en) | Non-planar annular cavity laser for improving optical isolation and optical isolation improving method | |
| CN213989551U (en) | Q-switched microchip laser using light-operated switch | |
| CN118336499B (en) | Self-stabilizing laser device and output method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191220 |
|
| RJ01 | Rejection of invention patent application after publication |