CN110932075B - Dual-wavelength pulse pair laser output method and laser - Google Patents
Dual-wavelength pulse pair laser output method and laser Download PDFInfo
- Publication number
- CN110932075B CN110932075B CN201910387520.5A CN201910387520A CN110932075B CN 110932075 B CN110932075 B CN 110932075B CN 201910387520 A CN201910387520 A CN 201910387520A CN 110932075 B CN110932075 B CN 110932075B
- Authority
- CN
- China
- Prior art keywords
- laser
- gain medium
- output
- level
- dual
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/094049—Guiding of the pump light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10084—Frequency control by seeding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
Abstract
The invention discloses a dual-wavelength pulse pair laser output method and a laser, wherein the laser comprises the following components: the device comprises a pumping source, a coupling mirror group, a first total reflector, a saturable absorber, a first laser gain medium, a second total reflector, a second laser gain medium, an F-P etalon and a laser output mirror. The coupling mirror group is used for focusing light emitted by the pumping source in a first laser gain medium after passing through the coupling mirror group, the first total reflector and the saturable absorber, and outputting a part of generated quasi-three-level laser, and directly pumping a second laser gain medium to generate and output four-level laser. The scheme of the invention can output the dual-wavelength pulse pair laser with the pulse time interval of hundred nanoseconds without an external electric control system, and fills the blank that the pulse interval of the existing pulse pair laser is hundred nanoseconds.
Description
Technical Field
The invention relates to the field of solid lasers, in particular to a dual-wavelength pulse pair laser output method and a laser.
Background
The double-pulse laser has very wide application in the technical fields of laser ranging, environment monitoring, laser remote sensing, laser radar, laser processing and the like, and particularly in the technical field of laser processing, the laser is punched by adopting pulses, so that not only can the fine processing efficiency be improved, but also the laser punching quality can be obviously improved. However, the pulse-to-laser drilling technology requires that the time interval between Q-switched pulse-to-laser is controlled within 200ns, otherwise, the advantages of the technology are difficult to embody, and the technology puts high technical requirements on the traditional pulse-to-laser control technology. In addition, research shows that in the process of drilling by using pulse pair laser, after the first pulse laser acts on the material, the property of the material is slightly changed due to the influence of force and heat, and if the pulse laser with the same wavelength is continuously adopted, the method for outputting the twin-wavelength pulse pair laser with the ultra-short time interval and the laser are obviously not suitable any more, so that the method for outputting the laser with the ultra-short time interval and the twin-wavelength pulse pair laser and the laser are very important.
The pulse pair laser reported in the present disclosure mainly outputs double-pulse laser with the same wavelength, wherein one known technique related to the present invention is disclosed by Lifeng et al (Lifeng, Wangjuntao, Yinsuve, etc.. electro-optical Q-switched double-pulse output Nd: YAG all-solid-state laser [ J ]. Chinese laser, 2012, 39 (08): 27-31), and the adopted structure is shown in FIG. 1. In the figure, 101 is a laser resonator total reflection mirror, 102 is a Q switch, 103 is a quarter wave plate, 104 is a polarizer, 105 is an LD pump source, 106 is a focusing coupling system, 107 is a mirror coated with pumping light anti-reflection and laser high reflection, 108 is Nd: YAG laser crystal 109 is a laser resonator output mirror. However, the known technology has the following three disadvantages: firstly, the output pulse pair laser is laser with the same wavelength, and the known technical scheme cannot obtain the output of the dual-wavelength pulse pair laser; secondly, the time interval between the pulse pair laser is more than 200 mus, and the difference between the time interval and the time interval of 200ns between the double pulses required in the technical field of laser drilling is 3 orders of magnitude, namely the known technology can not meet the technical requirement of the pulse pair laser drilling; thirdly, the known technical solution requires an additional control system to implement the pulse-to-laser output, increasing the complexity of the system.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a dual-wavelength pulse pair laser output method and a laser.
According to an aspect of the present invention, a dual-wavelength pulse-pair laser output laser is provided, which includes a pump source, a coupling mirror group, a first total reflector, a saturable absorber, a first laser gain medium, a second total reflector, a second laser gain medium, an F-P etalon, and a laser output mirror, wherein:
the pumping source, the coupling mirror group, the first holophote, the saturable absorber, the first laser gain medium, the second holophote, the second laser gain medium, the F-P etalon and the laser output mirror are sequentially arranged;
the first total reflector, the saturable absorber, the first laser gain medium, the F-P etalon and the laser output mirror form a first resonant cavity;
the second holophote, the second laser gain medium, the F-P etalon and the laser output mirror form a second resonant cavity;
the pump source is positioned on one side of the coupling mirror group, which is far away from the first total reflecting mirror, and the coupling mirror group is used for focusing light emitted by the pump source in a first laser gain medium after passing through the coupling mirror group, the first total reflecting mirror and the saturable absorber;
the pumping source provides pumping light for the first laser gain medium, quasi-three-level laser is generated in the first resonant cavity and serves as the pumping light of the second laser gain medium, four-level laser is output in the second resonant cavity, and dual-wavelength pulse pair laser with pulse time interval of hundred nanoseconds is output after the quasi-three-level laser reaches certain intensity.
Optionally, the laser further includes a laser power supply, and the laser power supply is connected to the pump source and configured to provide power to the pump source.
Optionally, the laser further includes a signal generator, and the signal generator is connected to the laser power supply and configured to control the laser power supply to emit pulsed laser to the pump source.
Optionally, the first laser gain medium and the second laser gain medium are coaxially disposed and aligned with a laser output direction.
Optionally, the two wavelength laser pulse energies are adjusted by adjusting the rotation angle of the F-P etalon.
Optionally, the laser further includes a base for supporting the coupling mirror group, the first total reflection mirror, the saturable absorber, the first laser gain medium, the second total reflection mirror, the second laser gain medium, the F-P etalon, and the laser output mirror.
Optionally, the laser further comprises a first heat sink and a second heat sink; the first heat sink is arranged between the first laser gain medium and the base, and the second heat sink is arranged between the second laser gain medium and the base and used for controlling the working temperature of the laser.
According to another aspect of the present invention, there is provided a method for outputting dual-wavelength pulse pair laser, which is applied to the laser described above, the method including:
the pumping source pumps the first laser gain medium, the first resonant cavity is in a high-loss state, the first laser gain medium is in a population inversion state, and when the light intensity in the first resonant cavity reaches the saturation light intensity of the saturable absorber, the loss in the first resonant cavity is rapidly reduced, and quasi-three-level laser is output;
the quasi-three-level laser directly pumps a second laser gain medium of the second resonant cavity, the second laser gain medium is rapidly in a population inversion state, and four-level laser is output;
when the quasi-three-level laser reaches a certain intensity, dual-wavelength pulse pair laser with pulse time interval of hundred nanoseconds is output.
The invention provides a dual-wavelength pulse pair laser output method and a laser, which realize the output of dual-wavelength pulse pair lasers with different wavelengths on the premise of not adding an electric control system, and the time interval of the output dual-wavelength pulses is in the order of hundreds of nanoseconds; in addition, the pumping mode adopted by the invention is intracavity direct pumping, which not only can effectively improve the Stokes efficiency and relieve the thermal lens effect of the laser crystal, but also can fundamentally avoid the gain competition problem in the traditional dual-wavelength laser adopting a single laser crystal.
Drawings
FIG. 1 is a schematic diagram of a prior art structure related to the present invention;
fig. 2 is a schematic diagram of a dual wavelength pulse-pair laser output laser according to an embodiment of the present invention;
FIG. 3 is a graph of laser power supply voltage versus time according to one embodiment of the present invention;
FIG. 4 is a graph of laser energy versus output time for two energy levels according to one embodiment of the present invention;
fig. 5 is a flowchart of a dual wavelength pulse-to-laser output method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.
Fig. 2 is a schematic structural diagram of a dual-wavelength pulse-pair laser output laser according to an embodiment of the present invention, which includes, as shown in fig. 2: the laser gain structure comprises a pumping source 3, a coupling mirror group 4, a first total reflector 5, a saturable absorber 6, a first laser gain medium 7, a second total reflector 8, a second laser gain medium 9, an F-P etalon 10 and a laser output mirror 11, wherein:
the pump source 3, the coupling mirror group 4, the first holophote 5, the saturable absorber 6, the first laser gain medium 7, the second holophote 8, the second laser gain medium 9, the F-P etalon 10 and the laser output mirror 11 are arranged in sequence;
the first total reflector 5, the saturable absorber 6, the first laser gain medium 7, the F-P etalon 10 and the laser output mirror 11 form a first resonant cavity;
the second total reflector 8, the second laser gain medium 9, the F-P etalon 10 and the laser output mirror 11 form a second resonant cavity;
the pumping source 3 is located at one side of the coupling mirror group 4 far away from the first total reflecting mirror 5, and the coupling mirror group 4 is used for focusing light emitted by the pumping source 3 in a first laser gain medium 7 after passing through the coupling mirror group 4, the first total reflecting mirror 5 and the saturable absorber 6.
In this embodiment, the pump light generated by the pump source 3 is coupled to the first laser gain medium 7 through the coupling mirror group 4, quasi-three-level laser is generated in the first resonant cavity, the quasi-three-level laser is used as the pump light of the second laser gain medium 9, four-level laser is output in the second resonant cavity, and after the quasi-three-level laser reaches a certain intensity, dual-wavelength pulse pair laser with pulse time interval of hundreds of nanoseconds is output.
In an embodiment of the present invention, the laser further includes a laser power supply 2, and the laser power supply 2 is connected to the pump source 3 and configured to provide power to the pump source 3.
In an embodiment of the present invention, the laser further includes a signal generator 1, and the signal generator 1 is connected to the laser power supply 2 and configured to control the laser power supply 2 to emit pulsed laser to the pumping source 3. Fig. 3 is a graph of the supply voltage of the laser power supply 2 versus time. As shown in fig. 3, the signal generator 1 controls the laser power source 2 to supply power to the pump source 3 at the same time interval and at a constant voltage.
In one embodiment of the invention, the first resonant cavity is used for forming 946nm quasi-three-level laser oscillation (through energy level transition)4F3/2-4I9/2Generated), said second cavity being used to form a 1064nm four-level laser oscillation (via energy level transitions)4F3/2-4I11/2Generation). In this embodiment, the second laser gain medium 9 is located in the first resonant cavity, i.e., the quasi-three-level laser resonant cavity, and the absorbed quasi-three-level laser in the cavity plays a dual role, i.e., providing pumping power to the second laser gain medium 9, and serving as an intra-cavity loss of the quasi-three-level laser. The 946nm laser generated by the first resonant cavity is used as a pumping source of the second laser gain medium 9, so that the problem of waste heat in the second laser gain medium 9 can be effectively solved in the process of directly pumping the second laser gain medium 9, and the beam quality and the conversion efficiency of laser light can be improved. Although the second laser gain medium 9 has a small absorption efficiency (generally controllable at about 10%) for 946nm wavelength, the second gain medium 9 can obtain a high power absorption for 946nm laser because the power of the intracavity quasi-three-level laser is large (when pumped by a ten-watt laser diode, the intracavity power can reach hundreds of watts).
In one embodiment of the present invention, the first laser gain medium 7 and the second laser gain medium 9 are coaxially disposed and aligned with the laser output direction.
In one embodiment of the present invention, the first resonator and the second resonator share one laser output mirror 11, which is intended to achieve coaxial output of laser light.
In one embodiment of the present invention, the first resonant cavity and the second resonant cavity share one F-P etalon 10, and the pulse energy of the laser light with two wavelengths is adjusted by adjusting the rotation angle of the F-P etalon 10.
In an embodiment of the present invention, the laser further includes a base 14, configured to carry the coupling mirror group 4, the first total reflecting mirror 5, the saturable absorber 6, the first laser gain medium 7, the second total reflecting mirror 8, the second laser gain medium 9, the F-P etalon 10, and the laser output mirror 11.
In an embodiment of the present invention, the laser further comprises a first heat sink 12 and a second heat sink 13, wherein the first heat sink 12 is disposed between the first laser gain medium 7 and the base 14, and the second heat sink 13 is disposed between the second laser gain medium 9 and the base 14, for controlling an operating temperature of the laser.
Specifically, the specific working principle of the dual-wavelength pulse laser is as follows: the signal generator 1 controls the laser power supply 2 to supply power to the pumping source 3 at the same time interval with constant voltage, pumping light emitted by the pumping source 3 passes through the coupling mirror group 4, the first total reflector 5 and the saturable absorber 6 and then is focused inside the first laser gain medium 7, and the first laser gain medium 7 absorbs the pumping light to form a population inversion (energy storage) state. In the initial stage, the number of photons spontaneously radiated in the first resonant cavity is small, the emitted light intensity is small, the absorption coefficient of the saturable absorber 6 is large, the saturable absorber 6 is in an unsaturated state, light is absorbed by the unsaturated absorber 6, and the loss in the first resonant cavity is high. In the process that the first laser gain medium 7 is continuously pumped, the number of photons spontaneously radiated in the cavity is continuously accumulated, the number of photons is increased, the light intensity in the cavity is increased, and at the moment, the absorption coefficient of the saturable absorber 6 is gradually reduced. When the light intensity in the first resonant cavity reaches the saturation light intensity of the saturable absorber 6, the light absorption coefficient of the saturable absorber 6 is rapidly reduced, the transmittance is suddenly increased, a large number of reversal particles are transited from a high energy level to a low energy level, the loss in the first resonant cavity is rapidly reduced, and quasi-three-level laser is formed.
After the quasi-three-level laser is output through the second total reflection mirror 8, one part of the quasi-three-level laser is output through the F-P etalon 10 and the laser output mirror 11, and the other part of the quasi-three-level laser irradiates the inside of a second laser gain medium 9 of the second resonant cavity to pump the second laser gain medium 9. The second laser gain medium 9 is directly pumped by the quasi-three-level laser, so that the stokes efficiency can be effectively improved, the thermal lens effect of the second laser gain medium 9 is reduced, and the threshold value of the four-level laser is low, namely the four-level laser output which is formed by population inversion and narrow pulse (10ns level) is rapidly formed in the second laser gain medium 9. Fig. 4 is a graph of laser energy of two energy levels versus output time, and as shown in fig. 4, since a short time (100 ns) is required from the absorption of the pump light by the second laser gain medium 9 to the formation of the four-level laser emission, the quasi-three-level laser generated by the first resonator and the four-level laser generated by the second resonator have a short time delay, and the time delay can be adjusted by the transmittance of the laser output mirror 11 and the doping concentration and length of the second laser gain medium 9. Because the quasi-three-level laser is a pumping source of the four-level laser, when the quasi-three-level laser reaches a certain intensity, the two kinds of wavelength pulse laser are successively generated in pairs, just like twins, and the time interval between the two kinds of wavelength pulse laser is hundreds of nanoseconds.
In an embodiment of the present invention, the first laser gain medium 7 is Nd: YAG crystal, two end faces are plated with a 946nm antireflection film system with the transmittance of more than 99.9 percent. The second laser gain medium 9 is Nd with a doping concentration of 1.1%: YAG crystal, two end faces are plated with 1064nm antireflection film system with transmittance of more than 99.9%. The first total reflector 5 is a concave lens, and one surface close to the saturable absorber 6 is plated with a 946nm total reflection film system with the reflectivity of 99.9%. The laser output mirror 11 is plated with 1064nm and 946nm partially transparent film systems. The saturable absorber 6 is Cr4+: YAG crystal.
According to another aspect of the present invention, there is also provided a method for outputting a dual-wavelength pulse pair laser, as shown in fig. 5, the method including S501-S503:
in step S501, the pumping source 3 pumps the first laser gain medium 7, the first resonant cavity is in a high loss state, the first laser gain medium 7 is in a population inversion state, and when the light intensity in the first resonant cavity reaches the saturation light intensity of the saturable absorber 6, the loss in the first resonant cavity is rapidly reduced, and quasi-three-level laser is output;
in step S502, the quasi-three-level laser directly pumps the second laser gain medium 9 of the second resonant cavity, and the second laser gain medium 9 is rapidly in a population inversion state, and outputs a four-level laser;
in step S503, after the quasi-three-level laser reaches a certain intensity, a dual-wavelength pulse pair laser with a pulse interval of hundreds of nanoseconds is output.
In this embodiment, in step S501, the pump light emitted from the pump source 3 passes through the coupling mirror group 4, the first total reflection mirror 5 and the saturable absorber 6 and is focused inside the first laser gain medium 7, and the first laser gain medium 7 absorbs the pump light to form a population inversion (energy storage) state. In the initial stage, the number of photons spontaneously radiated in the first resonant cavity is small, the emitted light intensity is small, the absorption coefficient of the saturable absorber 6 is large, the saturable absorber 6 is in an unsaturated state, light is absorbed by the unsaturated absorber 6, and the loss in the first resonant cavity is high. In the process of continuous pumping of the first laser gain medium 7, the number of photons spontaneously radiated in the cavity is continuously accumulated, the number of photons is increased, the light intensity in the cavity is increased, and at the moment, the absorption coefficient of the saturable absorber 6 is gradually decreased. When the light intensity in the first resonant cavity reaches the saturation light intensity of the saturable absorber 6, the light absorption coefficient of the saturable absorber 6 is rapidly reduced, the transmittance is suddenly increased, a large number of reversal particles are transited from a high energy level to a low energy level, the loss in the first resonant cavity is rapidly reduced, and quasi-three-level laser is formed.
In step S502, after the quasi-three-level laser is output through the second total reflection mirror 8, a part of the quasi-three-level laser is output through the F-P etalon 10 and the laser output mirror 11, and another part of the quasi-three-level laser irradiates the inside of the second laser gain medium 9 of the second resonant cavity to pump the second laser gain medium 9. The second laser gain medium 9 is directly pumped by the quasi-three-level laser, so that the stokes efficiency can be effectively improved, the thermal lens effect of the second laser gain medium 9 is reduced, and the threshold value of the four-level laser is low, namely the four-level laser output which is formed by population inversion and narrow pulse (10ns level) is rapidly formed in the second laser gain medium 9. Because the quasi-three-level laser is a pumping source of the four-level laser, when the quasi-three-level laser reaches a certain intensity, the two kinds of wavelength pulse laser are successively generated in pairs, just like twins, and the time interval between the two kinds of wavelength pulse laser is hundreds of nanoseconds.
In conclusion, the quasi-three-level laser is used for directly pumping to generate the four-level laser, so that the dual-wavelength pulse pair laser with different wavelengths is output on the premise of not adding an electric control system, and the time interval of the dual-wavelength pulse is output in hundreds of nanoseconds; in addition, the pumping mode adopted by the invention is intracavity direct pumping, which not only can effectively improve the Stokes efficiency and relieve the thermal lens effect of the laser crystal, but also can fundamentally avoid the gain competition problem in the traditional dual-wavelength laser adopting a single laser crystal.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A dual-wavelength pulse pair laser output laser comprises a pumping source, a coupling mirror group, a first holophote, a saturable absorber, a first laser gain medium, a second holophote, a second laser gain medium, an F-P etalon and a laser output mirror, wherein:
the pumping source, the coupling mirror group, the first holophote, the saturable absorber, the first laser gain medium, the second holophote, the second laser gain medium, the F-P etalon and the laser output mirror are sequentially arranged;
the first total reflector, the saturable absorber, the first laser gain medium, the F-P etalon and the laser output mirror form a first resonant cavity;
the second holophote, the second laser gain medium, the F-P etalon and the laser output mirror form a second resonant cavity;
the pump source is positioned on one side of the coupling mirror group, which is far away from the first total reflecting mirror, and the coupling mirror group is used for focusing light emitted by the pump source in a first laser gain medium after passing through the coupling mirror group, the first total reflecting mirror and the saturable absorber;
the pumping source provides pumping light for the first laser gain medium, quasi-three-level laser is generated in the first resonant cavity and serves as the pumping light of the second laser gain medium, four-level laser is output in the second resonant cavity, and dual-wavelength pulse pair laser with pulse time interval of hundred nanoseconds is output after the quasi-three-level laser reaches certain intensity.
2. The dual wavelength pulse pair laser output laser as claimed in claim 1, further comprising a laser power supply connected to said pump source for providing power to said pump source.
3. The dual wavelength pulse pair laser output laser as claimed in claim 2, further comprising a signal generator connected to said laser power supply for controlling said laser power supply to emit pulsed laser light to a pump source.
4. The dual wavelength pulse pair laser output laser of claim 1, wherein the first laser gain medium and the second laser gain medium are positioned coaxially and in line with a laser output direction.
5. The dual wavelength pulse pair laser output laser of claim 1, wherein the pulse energy of the two wavelength laser is adjusted by adjusting the rotation angle of the F-P etalon.
6. The dual wavelength pulse pair laser output laser of claim 1, further comprising a base for carrying the set of coupling mirrors, the first holophote, the saturable absorber, the first laser gain medium, the second holophote, the second laser gain medium, the F-P etalon, and the laser output mirror.
7. The dual wavelength pulse pair laser output laser of claim 6, wherein the laser further comprises a first heat sink and a second heat sink; the first heat sink is arranged between the first laser gain medium and the base, and the second heat sink is arranged between the second laser gain medium and the base and used for controlling the working temperature of the laser.
8. A method of outputting dual wavelength pulse pair laser light for use in a laser as claimed in any one of claims 1 to 7, the method comprising:
the pumping source pumps the first laser gain medium, the first resonant cavity is in a high-loss state, the first laser gain medium is in a population inversion state, and when the light intensity in the first resonant cavity reaches the saturation light intensity of the saturable absorber, the loss in the first resonant cavity is rapidly reduced, and quasi-three-level laser is output;
the quasi-three-level laser directly pumps a second laser gain medium of the second resonant cavity, the second laser gain medium is rapidly in a population inversion state, and four-level laser is output;
when the quasi-three-level laser reaches a certain intensity, dual-wavelength pulse pair laser with pulse time interval of hundred nanoseconds is output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910387520.5A CN110932075B (en) | 2019-05-09 | 2019-05-09 | Dual-wavelength pulse pair laser output method and laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910387520.5A CN110932075B (en) | 2019-05-09 | 2019-05-09 | Dual-wavelength pulse pair laser output method and laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110932075A CN110932075A (en) | 2020-03-27 |
| CN110932075B true CN110932075B (en) | 2021-09-17 |
Family
ID=69855635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910387520.5A Active CN110932075B (en) | 2019-05-09 | 2019-05-09 | Dual-wavelength pulse pair laser output method and laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110932075B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112914722A (en) * | 2021-03-04 | 2021-06-08 | 广州市激光技术应用研究所有限公司 | Laser operation device |
| CN113258417B (en) * | 2021-05-11 | 2022-08-30 | 长春理工大学 | Dual-wavelength vortex optical laser |
| CN114361926B (en) * | 2022-01-06 | 2024-03-19 | 浙江航天润博测控技术有限公司 | Pulse generation time adjustable passive Q-switched laser |
| CN117277037A (en) * | 2023-11-21 | 2023-12-22 | 长春理工大学 | Light spot superposition homogenizing anhydrous air-cooling-free laser and output method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208458B1 (en) * | 1997-03-21 | 2001-03-27 | Imra America, Inc. | Quasi-phase-matched parametric chirped pulse amplification systems |
| CN201035181Y (en) * | 2007-04-11 | 2008-03-12 | 福州高意通讯有限公司 | A F-P etalon type wavestrip switch |
| CN102170085A (en) * | 2011-03-24 | 2011-08-31 | 长春理工大学 | Biasing method electro-optical Q-switched double-wavelength laser |
| CN104752949A (en) * | 2015-03-05 | 2015-07-01 | 长春理工大学 | Device for simultaneously outputting dual-wavelength continuous hollow lasers with phase compensation |
| CN105470795A (en) * | 2016-01-18 | 2016-04-06 | 中国科学院苏州生物医学工程技术研究所 | All-solid-state yellow laser for medicine |
| CN108988115A (en) * | 2018-08-09 | 2018-12-11 | 电子科技大学 | Infrared pulsed lasers and laser output method in the novel equivalent two waveband of same threshold value |
-
2019
- 2019-05-09 CN CN201910387520.5A patent/CN110932075B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208458B1 (en) * | 1997-03-21 | 2001-03-27 | Imra America, Inc. | Quasi-phase-matched parametric chirped pulse amplification systems |
| CN201035181Y (en) * | 2007-04-11 | 2008-03-12 | 福州高意通讯有限公司 | A F-P etalon type wavestrip switch |
| CN102170085A (en) * | 2011-03-24 | 2011-08-31 | 长春理工大学 | Biasing method electro-optical Q-switched double-wavelength laser |
| CN104752949A (en) * | 2015-03-05 | 2015-07-01 | 长春理工大学 | Device for simultaneously outputting dual-wavelength continuous hollow lasers with phase compensation |
| CN105470795A (en) * | 2016-01-18 | 2016-04-06 | 中国科学院苏州生物医学工程技术研究所 | All-solid-state yellow laser for medicine |
| CN108988115A (en) * | 2018-08-09 | 2018-12-11 | 电子科技大学 | Infrared pulsed lasers and laser output method in the novel equivalent two waveband of same threshold value |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110932075A (en) | 2020-03-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110932075B (en) | Dual-wavelength pulse pair laser output method and laser | |
| US5394413A (en) | Passively Q-switched picosecond microlaser | |
| US4794615A (en) | End and side pumped laser | |
| US8532151B2 (en) | Passively Q-switched microlaser | |
| US5381431A (en) | Picosecond Q-switched microlasers | |
| US4951294A (en) | Diode pumped modelocked solid state laser | |
| CN110165539B (en) | Method for realizing adjustable sub-pulse group interval output by multi-step pumping and laser | |
| US3668420A (en) | 1.5 micron raman laser | |
| Van Leeuwen et al. | High power 808 nm VCSEL arrays for pumping of compact pulsed high energy Nd: YAG lasers operating at 946 nm and 1064 nm for blue and UV light generation | |
| CN207994332U (en) | The Yb of laser diode-pumped tungsten disulfide tune Q：GYSO all solid state lasers | |
| CN107046224B (en) | Laser for pulse pump active Q-switching output double-pulse width pulse | |
| Scholle et al. | In-band pumping of high-power Ho: YAG lasers by laser diodes at 1.9 µm | |
| Maleki et al. | 57ámJ with 10áns passively Q-switched diode pumped Nd: YAG laser using Cr 4+: YAG crystal | |
| Zverev et al. | Eye-safe Nd: YVO4 laser with intracavity SRS in a BaWO4 crystal | |
| CN107994453A (en) | The Yb of laser diode-pumped tungsten disulfide tune Q：GYSO all solid state lasers | |
| Xiong et al. | High power VCSEL array pumped Q-switched Nd: YAG lasers | |
| CN112636146B (en) | High-power mode-locked disc laser | |
| CN110932080B (en) | Single longitudinal mode laser | |
| CN101132108A (en) | Semiconductor pumping high repeated frequency solid state laser device | |
| RU189457U1 (en) | OPTICAL SCHEME OF A FEMTOSECOND RESONATOR BASED ON A CONE LIGHT GUIDE | |
| CN112688151A (en) | 266nm deep ultraviolet solid laser | |
| CN110768096A (en) | High-power and high-roundness industrial laser | |
| CN110632805A (en) | Solid single-laser dual-wavelength pumping optical difference frequency terahertz wave generating device | |
| Yi et al. | Diode-pumped Nd: YAG Rod laser with single-side pumping geometry | |
| Büker et al. | High-pulse-energy Q-switched Ho3+: YAG laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |