CN215645415U - Space stereo multi-pass amplifier for ultrafast pulse laser amplification - Google Patents
Space stereo multi-pass amplifier for ultrafast pulse laser amplification Download PDFInfo
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- CN215645415U CN215645415U CN202121987544.3U CN202121987544U CN215645415U CN 215645415 U CN215645415 U CN 215645415U CN 202121987544 U CN202121987544 U CN 202121987544U CN 215645415 U CN215645415 U CN 215645415U
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Abstract
The utility model provides a space three-dimensional multi-pass amplifier for amplifying ultrafast pulse laser, which expands beam of seed source laser, enters a lens in a mode of being parallel to an optical axis of the lens and being off-axis through a plane reflector, and completes off-axis amplification once through the lens, a laser crystal and the reflector and then the laser crystal and the lens; after the prism of the incident surface is changed, the light is transferred to the next incident surface, and the off-axis amplification of different incident surfaces is carried out again. By the mode, the maximum overlapping of the seed laser and the pump light is realized, the extraction efficiency of the amplifier is improved, and the full utilization of the energy stored in the laser crystal is realized; in addition, the geometric symmetry of the light path space is optimized, so that the quality of the amplified laser beam can be improved optimally.
Description
Technical Field
The utility model belongs to the technical field of laser, and relates to a space three-dimensional multi-pass amplifier for amplifying ultrafast pulse laser.
Background
Compared with microsecond and nanosecond lasers, high-energy picosecond and femtosecond lasers are widely applied to the fields of material fine micromachining, LED scribing, solar photovoltaic, scientific research and the like due to higher peak power and narrower pulse width. The picosecond and femtosecond laser processing material is adopted, so that the processing precision is higher, the heat affected zone of the processing edge is extremely small, and the advantages of no burr, no carbonization and the like are achieved.
To meet the requirements of the above-mentioned machining applications, the peak power of the machining laser is usually required to reach the MW level. The current principle of generating MW magnitude peak power picosecond laser is as follows: a dozen MHz mode-locked seed source laser is selected, seed light pulses from kHz to hundred kHz are selected by an acousto-optic or electro-optic modulation method, and then amplified and output. The seed light pulse amplification mode has two modes, namely regenerative amplification and traveling wave amplification. The regenerative amplification technology has the advantage that the gain of the amplifier is high and can reach 106-109However, the regenerative amplification cavity has a complex structure and very strict requirements on pulse timing, and meanwhile, amplification needs to be realized by means of an electro-optical cavity emptying function, so that the amplifier is very difficult to manufacture. The traveling wave amplification technology has the advantages of no need of a regenerative amplification cavity, simple structure, stability, reliability and easy acquisition of higher power output. The disadvantage is that the single-stage amplification gain is small and can reach 10 generally3-104And (4) doubling.
Currently, most international companies amplify picosecond pulses by using regenerative amplifiers, such as High laser, eksop, Trumpf, and Coherent, and the highest output power can reach more than 50W at a frequency of hundreds kHz. Traveling wave amplifiers for picosecond pulse amplification have also been studied abroad. For example, Antonio Agnesi et al, Italy, 2006, achieved 0.1nJ single pulse energy amplification to 10uJ with a gain of 10 using a two-stage slab laser5And (4) doubling. In 2009, K. Nawata et al used a 2mW picosecond seed source laser passing twice through a wedge-shaped slab Nd: YO4Lines of formationThe wave amplifier realizes the output power of 25W and the amplification gain of 12500 times. In order to obtain high gain and high peak power, the gain medium of the traveling wave amplifier is generally in a slab structure, but the slab structure needs to shape the amplified laser for multiple times, which causes the quality of a laser spot to be poor. YVO is adopted as the end-face pump Nd4The crystal mode can solve the problem, but YVO is generated due to Nd4The end face is affected by thermal stress and cannot bear high pump power (less than 40W), so that the amplification gain is small. In recent years, researches show that by replacing 808nm pump light with 880 nm/888 nm pump light, the thermal effect of the crystal can be effectively reduced by more than 40%, so that the end face of the crystal can bear higher pump power (more than 150W).
In order to fully utilize the gain brought by the high-power pump module, a multi-pass amplification design is adopted, but most of the currently known designs design the amplification optical path in one plane. This design does not take full advantage of the active spatial area of the gain crystal, reducing gain and leading to heat build-up.
Disclosure of Invention
In order to fully utilize the activation space region of the gain crystal, the utility model provides a space stereo multi-pass amplifier for ultrafast pulse laser amplification, aiming at carrying out three-dimensional transmission on an amplified light beam in the activation space region of the gain crystal so as to improve the gain and reduce the thermal effect.
In order to achieve the above object, the present invention employs the following technical solutions.
A space three-dimensional multi-pass amplifier for ultrafast laser amplification sequentially comprises a semiconductor diode pumping source (1), a first lens (2), a second lens (3), a first reflector (4), a laser crystal (5) and a third lens (6) along the advancing direction of pumping light, and sequentially comprises a seed source (12), a beam expander (21) and a second reflector (10) along the advancing direction of seed light, wherein the second reflector (10) is connected with the third lens (6); n incident surface conversion prisms are arranged between the second reflector (10) and the third lens (6), wherein N is greater than or equal to 1;
after being expanded by the beam expander (21), the seed light is incident to the third lens (6) from the first incident surface and enters the laser crystal (5), then is reflected to the laser crystal (5) by the first reflector (4), and passes through the third lens (6) to finish the first off-axis amplification; then, the light beam enters a third lens (6) from a second incident surface through a first conversion incident surface prism (7), then enters a laser crystal (5), is reflected back to the laser crystal (5) through a first reflector (4), and then passes through the third lens to finish second off-axis amplification; the light beam which completes the second off-axis amplification is output from the third lens or enters the second conversion surface incidence prism, the third off-axis amplification process is completed similarly to the first off-axis amplification process and the second off-axis amplification process, the light beam enters the third lens from the (N + 1) th incidence surface after entering the last conversion surface incidence prism N, then enters the laser crystal, is reflected back to the laser crystal (5) through the first reflector (4), and is output through the third lens, and the (N + 1) th off-axis amplification process is completed;
when N transformation incidence surface prisms are arranged between the second reflecting mirror and the third lens, the seed light passes through the laser crystal (2 x (N + 1)) times in total, and the off-axis amplification process (N + 1) times is completed.
Preferably, an isolator (11) is arranged between the beam expander (21) and the second mirror (10).
Preferably, the conversion incident surface prism may be a right-angle prism, a pyramid prism, or a parallel return light system composed of plane mirrors.
Preferably, the first reflector (4) and the laser crystal (5) are close to or at a certain distance.
Preferably, the semiconductor diode pump source is coupled out through an optical fiber.
Preferably, the laser crystal (5) is Nd: YVO4 crystal.
Preferably, the semiconductor laser diode pumping source amplifies the Nd: YVO4 laser crystal in an end-face pumping mode.
Preferably, the polarization direction of the laser light emitted by the seed source (12) is consistent with the pi polarization direction of the amplifier crystal (5).
The spatial three-dimensional multi-pass amplifier suitable for ultrafast pulse laser amplification provided by the utility model has the amplification gain of 1000 times. The laser pulse peak power can be amplified to MW magnitude from KW magnitude, the output amplified laser pulse is stable, the light beam quality is excellent, and the structure is stable and reliable.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
Fig. 1 is a structural diagram of a spatial stereo multi-pass amplifier for amplifying ultrafast pulsed laser according to the present invention.
In the figure, 1 is a semiconductor diode pumping source, 2 is a first lens, 3 is a second lens, 4 is a first reflector, 5 is a laser crystal, 6 is a third lens, 7 is a first conversion incidence surface prism, 8 is a second conversion incidence surface prism, 9 is a third conversion incidence surface prism, 10 is a second reflector, 11 is an isolator, 12 is a laser seed source, 21 is a beam expanding lens.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a structural diagram of a spatial stereo multi-pass amplifier for amplifying ultrafast pulsed laser in an embodiment of the present invention. As shown in fig. 1, the semiconductor diode pump source (1) is connected with the first lens (2), the first lens (2) is connected with the second lens (3), the second lens (3) is connected with the first reflector (4), the first reflector (4) is connected with the laser crystal (5), the laser crystal (5) is connected with the third lens (6), the laser seed source (12) is connected with the beam expander (21), the beam expander (21) is connected with the isolator (11), the isolator (11) is connected with the second reflector (10), and the second reflector (10) is connected with the third lens (6). Seed light enters the laser crystal through the third lens (6), is reflected to the laser crystal (5) by the first reflector (4), passes through the third lens (6), enters the third lens (6) from another incident surface through the first transformation incident surface prism (7), enters the laser crystal (5), passes through the first reflector (4), is reflected to the laser crystal (5), passes through the third lens (6), enters the second transformation incident surface prism (8), enters from another incident surface, passes through the third lens (6), enters the laser crystal (5) again, is reflected to the laser crystal (5) by the first reflector (4), enters the third transformation incident surface prism (9) through the third lens (6), is reflected to the third lens (6) by the third transformation incident surface prism (9), enters the laser crystal (5) and is reflected to the laser crystal (5) by the first reflector (4), and then output through a third lens (6).
In addition, in practical application, the number of times that the seed light passes through the laser crystal can be correspondingly increased or reduced by arranging different numbers of the transformation incidence surface prisms according to specific conditions such as the size of a device.
In the embodiment, the seed source laser beam is expanded firstly, enters the lens in a mode of being parallel to the optical axis of the lens and being off-axis through the plane reflector, and is amplified for one off-axis through the lens, the laser crystal and the reflector and then the laser crystal and the lens; after the prism of the incident surface is changed, the light is transferred to the next incident surface, and the off-axis amplification of different incident surfaces is carried out again. In the embodiment, a mode that seed light enters the crystal from different incidence surfaces for amplification is adopted, so that the maximum overlapping of the seed laser and the pump light is realized, and the extraction efficiency of the amplifier is improved. The pump light enters the laser crystal after being focused and then is diffused, the divergence angle of the output laser of the seed source is very small, and if the seed light directly enters the crystal from the optical axis of the crystal for amplification, high extraction efficiency cannot be obtained due to low overlapping rate. Seed light enters the crystal from different incidence surfaces to form a conical region in the crystal, and the conical region is just matched with the divergent conical region of the pump light, so that the overlapping rate is improved, namely the energy extraction efficiency is improved, and the full utilization of the energy stored in the laser crystal is realized; in addition, the geometric symmetry of the light path space is optimized, so that the quality of the amplified laser beam can be improved optimally.
In the embodiment, the spatial three-dimensional multi-pass amplifier for amplifying the ultrafast pulse laser can adopt a semiconductor laser diode coupled and output by an optical fiber as a pumping source to carry out pumping on Nd: YVO4And amplifying the laser crystal rod in an end-face pumping mode. The technology for ultrafast laser pulse amplification is in the forms of slab amplification, fiber amplification, side-pumped laser crystal amplification and the like. The slab amplification mode is easier to obtain higher gain, and can bear higher peak power, but laser pulses need to be shaped for many times, and the overlapping rate of seed light and pump light is lower; the advantages of fiber amplification are high amplification gain, excellent quality of the amplified beam, but not high peak power. The gain obtained by the side pumping mode is limited, and meanwhile, the quality of the output light beam is poor due to the low overlapping rate of the pumping light and the seed light. In the embodiment, the amplifier adopts a semiconductor laser diode pair Nd: YVO with fiber coupling output4The laser crystal rod is subjected to an end pumping mode, so that an amplification region and a pumping light region formed by seed light can be strictly optimized, the overlapping rate of the pumping light and signal light is optimized to the best, the extraction efficiency is improved, and the beam quality is optimized. Meanwhile, the wavelength of the pump light is close to the emission wavelength of the crystal, so that the quantum loss of laser amplification is further reduced, and the gain of the amplifier is greatly improved while the heat effect is reduced.
In order to increase the extraction efficiency of the amplifier, the polarization direction of the seed source is consistent with the pi polarization direction of the amplifier laser crystal Nd: YVO 4.
In this embodiment, the prism with a changed incident surface can be a right-angle prism, a pyramid prism, or a parallel return light system composed of plane mirrors.
The first reflector can be closely attached to the laser crystal or be separated from the laser crystal by a certain distance.
In this embodiment, a semiconductor diode pump source can be selected as an optical fiber coupling output form, the output power is 60W, the output wavelength is 880nm, the tail fiber is 2m long, the fiber core diameter is 250 μm, and the NA value is 0.22. The laser crystal is Nd: YVO4Crystals, the crystal size being: 4 multiplied by 30mm, the crystal has a wedge angle of 1 degree, the doping concentration is 0.2-0.5%, and the laser crystal is cooled by circulating water to control the temperature.
After a spatial three-dimensional multi-pass amplifier device for ultrafast pulse laser amplification is constructed, the amplification efficiency thereof is tested. When the optical power is pumped to 60W, the seed light with different frequencies respectively enters the amplifier for amplification: when the pulse repetition frequency is 100KHz, the laser power of the seed source is 5mW, and after the seed source is amplified by the built amplifier, the output laser power is 5.6W, so that the gain of the laser pulse is more than 1000 times. When the pulse repetition frequency is 1000KHz, the laser power of the seed source is 40mW, after the seed source is amplified by the built amplifier, the output laser power is 11W, and the gain is saturated. When the output laser power is 5.6W, a beam quality analyzer is used for testing the beam quality factor M2And (3) after the amplifier continuously operates for 8 hours, the stability of the laser RMS pulse is calculated to be less than 2% and the stability of the output average power is less than 1% by recording data sampling data. Therefore, the spatial three-dimensional multi-pass amplifier for amplifying the ultrafast pulse laser has the characteristics of high gain, excellent beam quality and good stability, and is widely applied to the field of ultrafast laser pulse amplification.
In summary, the amplifier provided in the utility model reflects and passes the ultrafast pulse laser seed light in the laser crystal for multiple times through different incident surfaces, so that the spatial space formed by the seed light in the laser crystal and the symmetric maximum overlapping of the pump light are realized, and the extraction efficiency of the amplifier is improved while high gain is ensured; and the gain of the amplifier is high, the quality of output facula light beams is excellent, and the stability of amplified laser pulses is good.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (8)
1. A space three-dimensional multi-pass amplifier for ultrafast laser amplification is characterized by sequentially comprising a semiconductor diode pumping source (1), a first lens (2), a second lens (3), a first reflector (4), a laser crystal (5) and a third lens (6) along the advancing direction of pumping light, and sequentially comprising a seed source (12), a beam expander (21) and a second reflector (10) along the advancing direction of the seed light, wherein the second reflector (10) is connected with the third lens (6); n incident surface conversion prisms are arranged between the second reflector (10) and the third lens (6), wherein N is greater than or equal to 1;
after being expanded by the beam expander (21), the seed light is incident to the third lens (6) from the first incident surface and enters the laser crystal (5), then is reflected to the laser crystal (5) by the first reflector (4), and passes through the third lens (6) to finish the first off-axis amplification; then, the light beam enters a third lens (6) from a second incident surface through a first conversion incident surface prism (7), then enters a laser crystal (5), is reflected back to the laser crystal (5) through a first reflector (4), and then passes through the third lens (6) to finish second off-axis amplification; the light beam which finishes the second off-axis amplification is output from the third lens (6) or enters the second conversion surface incidence prism, the third off-axis amplification process is finished similarly to the first off-axis amplification process and the second off-axis amplification process, the light beam enters the third lens (6) from the (N + 1) th incidence surface after entering the last conversion surface incidence prism N, then enters the laser crystal, is reflected back to the laser crystal (5) through the first reflector (4), and is output through the third lens, and the (N + 1) th off-axis amplification process is finished;
when N transformation incidence surface prisms are arranged between the second reflecting mirror (10) and the third lens (6), the seed light passes through the laser crystal (2 x (N + 1)) times in total, and the off-axis amplification process (N + 1) times is completed.
2. A spatial stereo multipass amplifier for ultrafast laser amplification according to claim 1 wherein an isolator (11) is provided between the beam expander mirror (21) and the second mirror (10).
3. The spatial stereo multi-pass amplifier for ultrafast laser amplification as claimed in claim 1, wherein the transforming incident surface prism may be a right angle prism or a pyramid prism, or a parallel return optical system consisting of plane mirrors.
4. The spatial stereo multi-pass amplifier for ultrafast laser amplification according to claim 1, wherein the first reflecting mirror (4) and the laser crystal (5) are closely attached or spaced.
5. The spatial stereo multi-pass amplifier for ultrafast laser amplification according to claim 1, wherein the semiconductor diode pump source (1) is coupled out through an optical fiber.
6. The spatial stereo multi-pass amplifier for ultrafast laser amplification according to claim 5, wherein the laser crystal (5) is Nd: YVO4And (4) crystals.
7. The spatial three-dimensional multi-pass amplifier for ultrafast laser amplification according to claim 6, wherein the semiconductor diode pump source (1) is Nd: YVO4The laser crystal is amplified by an end-pumped mode.
8. The spatial stereo multi-pass amplifier for ultrafast laser amplification according to claim 7, wherein the polarization direction of the laser light emitted from the seed source (12) coincides with the pi polarization direction of the amplifier laser crystal (5).
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| CN202121987544.3U CN215645415U (en) | 2021-08-23 | 2021-08-23 | Space stereo multi-pass amplifier for ultrafast pulse laser amplification |
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| CN202121987544.3U CN215645415U (en) | 2021-08-23 | 2021-08-23 | Space stereo multi-pass amplifier for ultrafast pulse laser amplification |
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Effective date of registration: 20240513 Address after: 511517 area B, no.27-9 Baijia Industrial Park, Qingyuan high tech Zone, Guangdong Province Patentee after: FIRST SEMICONDUCTOR MATERIALS Co.,Ltd. Country or region after: China Address before: 239064 No.100 Nanjing Road, Langya Economic Development Zone, Chuzhou City, Anhui Province Patentee before: Anhui Guangzhi Technology Co.,Ltd. Country or region before: China |
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