CN202405610U - High-gain double-route traveling-wave amplifier for picosecond laser pulse amplification - Google Patents
High-gain double-route traveling-wave amplifier for picosecond laser pulse amplification Download PDFInfo
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- CN202405610U CN202405610U CN201120562285XU CN201120562285U CN202405610U CN 202405610 U CN202405610 U CN 202405610U CN 201120562285X U CN201120562285X U CN 201120562285XU CN 201120562285 U CN201120562285 U CN 201120562285U CN 202405610 U CN202405610 U CN 202405610U
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Abstract
The utility model relates to a high-gain double-route traveling-wave amplifier for picosecond laser pulse amplification. A semiconductor diode pumping source is engaged with a first lens; the first lens is engaged with a second lens and the second lens is engaged with a first plane mirror; the first plane mirror is engaged with a laser crystal and the laser crystal is engaged with a third lens; the third lens is engaged with a second plane mirror; a picosecond seed source is engaged with a thin film polarizing sheet and the thin film polarizing sheet is engaged with a Faraday polarization apparatus; the Faraday polarization apparatus is engaged with a sixth lens and the sixth lens is engaged with a fifth lens; and the fifth lens is engaged with a fourth lens and the fourth lens is engaged with the first plane mirror. A lens combination is used for carrying out beam expanding and focusing on the seed laser so that seed pumping lights are overlapped in the crystal; and meanwhile, the combination of the lens and the reflection mirror reflects residual pumping lights back to the inner part of the crystal to be reused. The high-gain double-route traveling-wave amplifier for the picosecond laser pulse amplification has the advantages of high amplification gain, excellent light spot quality, good stability and the like.
Description
Technical field
The utility model relates to a kind of high-gain round trip travelling-wave amplifier that the picosecond laser pulse is amplified that is used for, and belongs to Solid State Laser amplifying technique field.
Background technology
The high-energy picosecond laser is with its high peak power, narrow pulse duration, in the processing of material fine micro, and the LED scribing, photovoltaic, fields such as scientific research have obtained using widely.With respect to nanosecond laser, adopt the picosecond laser rapidoprint, have that precision height, heat-affected zone are minimum, the processing edge does not have advantages such as burr.
In order to satisfy above-mentioned application; Generally require the picosecond laser peak power to reach the MW magnitude; The principle that produces MW magnitude peak power picosecond laser at present is logical from tens MHz locked mode seed source laser; Cross the method for electrooptic modulation, select kHz, realize a watt level power output through amplifying then to hundred kHz seed optical pulse.The mode that seed optical pulse is amplified has two kinds, and regenerative amplification and row ripple amplify.The regenerative amplification technological merit is that amplifier gain is high, can reach 10
6-10
9But the regenerative amplification cavity configuration is complicated, and the paired pulses sequential requires very strict, need add electric light cavity dumping function simultaneously, and manufacture difficulty is very big.The advantage of row ripple amplifying technique is, do not need the regenerative amplification chamber, and is simple in structure, reliable and stable, and obtains higher-wattage output easily, and shortcoming is that the single-stage gain amplifier is little, generally can reach 10
3-10
4
At present, most of in the world companies all adopt regenerative amplifier to amplify picopulse, High Q laser for example, and Ekspla, Trumpf, companies such as Coherent, maximum power output can reach under the hundred kHz frequencies more than the 50W.External also have research to be used for the travelling-wave amplifier that picopulse amplifies.For example, people such as Italian Antonio Agnesi in 2006 adopt the two-stage slab laser to realize the 0.1nJ single pulse energy is amplified to 10uJ, and gain amplifier is 10
5The travelling-wave amplifier that people such as 2009 Japanese K. Nawata adopt 2mW psec seed source laser to constitute through wedge shape lath Nd:YVO4 for twice is realized power output 25W, and gain amplifier is 12500.In order to obtain high gain and high peak power, the gain media of travelling-wave amplifier is generally battened construction, and the shaping meeting causes the laser facula degradation but battened construction need carry out repeatedly to amplifying laser.Adopt the end pumping Nd:YVO4 mode can head it off, but because the influence of Nd:YVO4 end face thermal stress can not be born high pump power (less than 40W), gain amplifier be very little.Recent study is found, adopt the 888.5nm pump light to replace the 808nm pump light can effectively reduce crystal thermal effect more than 40%, so crystal end-face can bear higher pump power (greater than 150W).
Summary of the invention
The purpose of the utility model is to overcome the deficiency that prior art exists, and a kind of high-gain round trip travelling-wave amplifier that the picosecond laser pulse is amplified that is used for is provided.
The purpose of the utility model realizes through following technical scheme:
Be used for the high-gain round trip travelling-wave amplifier that the picosecond laser pulse is amplified, characteristics are: comprise semiconductor diode pump source, laser crystal and psec seed source, the semiconductor diode pump source is connected first lens; First lens are connected second lens, and second lens are connected first level crossing, and first level crossing is connected laser crystal; Laser crystal is connected the 3rd lens, and the 3rd lens are connected second level crossing, and said psec seed source is connected the film polarizer; The film polarizer is connected Faraday polarization apparatus, and Faraday polarization apparatus is connected the 6th lens, and the 6th lens are connected the 5th lens; The 5th lens are connected the 4th lens, and the 4th lens are connected with first level crossing mutually; Keep polarization state constant behind the pulse film polarizer of psec seed source; Through 45 ° of Faraday polarization apparatus rear polarizer attitude rotations; Expand bundle through the 6th lens and the 5th lens again, the pulse laser that expands after restrainting focuses on laser crystal inside through the 4th lens and first level crossing; The pump light that send in the semiconductor diode pump source is inner to laser crystal through first lens and second lens focus; Seed light is after the inner amplification for the first time of laser crystal; Seed light and the pump light that do not absorbed by crystal are through the 3rd collimated; Get back in the laser crystal through second flat mirror reflects again, amplification of seed light secondary and residual pump light are utilized once more; Laser pulse after secondary amplifies arrives Faraday polarization apparatus through first level crossing, the 4th lens, the 5th lens and the 6th lens; Amplifying laser polarization state through behind the Faraday polarization apparatus is rotated 45 ° once more; Polarization state is vertical with the polarization state that incides for the first time the film polarizer, and the laser that round trip is amplified reflects from the film polarizer.
Further; The above-mentioned high-gain round trip travelling-wave amplifier that is used for picosecond laser pulse amplification, wherein, said semiconductor diode pump source is 150W power, 888.5nm wave band diode end-face pump; Its tail optical fiber core diameter is 400 microns, numerical aperture NA=0.22.
Further, the above-mentioned high-gain round trip travelling-wave amplifier that is used for picosecond laser pulse amplification, wherein, said laser crystal is Nd:YVO4, and crystal has the angle of wedge, and crystal doping concentration is 0.5%～1%, and crystal length is positioned at 25～50mm.
Substantive distinguishing features and obvious improvement that the utility model technical scheme is outstanding are mainly reflected in:
The utility model adopts two lens that seed source laser is expanded bundle earlier, and the mode that focuses on again with single lens then realizes the overlapping to greatest extent of seed laser and pump light, improves the extraction efficiency of amplifier; Adopt single lens and single plane mirror compound mode to realize the utilization once more to residual pump light, the seed laser reflected back laser crystal after will amplifying for the first time simultaneously is inner, and the secondary of accomplishing laser amplifies; The utility model amplifier has the gain amplifier height, output facula good quality, advantages such as good stability.
Description of drawings
Below in conjunction with accompanying drawing the utility model technical scheme is described further:
Fig. 1: the principle schematic of the utility model.
Embodiment
The utility model design is applicable to the high-gain round trip travelling-wave amplifier of picosecond laser pulse, and its gain amplifier can reach 1000 times, can the peak power of laser be amplified to the MW magnitude by kW, and the output amplifying laser is stable, and beam quality is excellent, and is simple in structure.
As shown in Figure 1, be used for the high-gain round trip travelling-wave amplifier that the picosecond laser pulse is amplified, comprise semiconductor diode pump source 1, laser crystal 5 and psec seed source 13; Semiconductor diode pump source 1 is connected first lens, 2, the first lens 2 and is connected second lens, 3, the second lens, 3 linkings, first level crossing 4; First level crossing 4 is connected laser crystal 5, and laser crystal 5 is connected the 3rd lens 6, the three lens 6 and is connected second level crossing 7; Psec seed source 13 is connected film polarizer 12; Film polarizer 12 is connected Faraday polarization apparatus 11, and Faraday polarization apparatus 11 is connected the 6th lens 10, the six lens 10 and is connected the 5th lens 9; The 5th lens 9 are connected the 4th lens 8, the four lens 8 and are connected mutually with first level crossing 4; The pulse of psec seed source 13 keeps polarization state constant through film polarizer 12 backs; Through 45 ° of Faraday polarization apparatus 11 rear polarizer attitudes rotations; Expand bundle through the 6th lens 10 and the 5th lens 9 again; The pulse of expanding after restrainting focuses on laser crystal 5 inside through the 4th lens 8 and first level crossing 4, and the distance of adjusting between the 6th lens 10 and the 5th lens 9 makes focal beam spot probably be 800um; The pump light that send in semiconductor diode pump source 1 focuses on laser crystal inner 5 through first lens 2 and second lens 3; Focal beam spot also remains on 800um; Seed light is after laser crystal 5 inner amplifications for the first time; Seed light and the pump light that do not absorbed by crystal reflect back in the laser crystal 5 through second level crossing 7 through the 3rd lens 6 collimations again, and the seed light secondary is amplified and residual pump light utilizes once more; Laser pulse after secondary amplifies arrives Faraday polarization apparatus 11 through first level crossing 4, the 4th lens 8, the 5th lens 9 and the 6th lens 10; Amplifying laser polarization state through behind the Faraday polarization apparatus 11 is rotated 45 ° once more; Polarization state is vertical with the polarization state that incides for the first time film polarizer 12, and the laser that round trip is amplified reflects from film polarizer 12.
Travelling-wave amplifier adopts 888.5nm diode end-face pump Nd:YVO4 mode to realize the amplification of seed optical pulse.The amplifier that is used for picosecond laser has forms such as lath amplification, optical fiber amplification, the amplification of profile pump crystal.The advantage of fiber amplifier is that gain amplifier is high, but can not bear very high peak power; The mode that lath amplifies can obtain than higher gain, can bear very high peak power simultaneously, but need do repeatedly shaping to laser pulse, and seed light and pump light is overlapping good inadequately; Profile pump mode gain amplifier is big inadequately, because seed light and pump light coincidence are bad, output beam quality is poor simultaneously.The utility model amplifier adopts end pumping mode pumping laser crystal, thereby the Duplication that increases pump light and seed laser can be born very high peak power simultaneously to improve beam quality.Adopt the advantage of 888.5nm optical pumping Nd:YVO4 crystal to be; Particle directly is energized into upper laser level from ground state, has effectively reduced the quantum loss, make laser crystal can bear pump power greater than 150W; Under high power pump, amplifier has very high gain.
Adopt row ripple amplification mode to realize the amplification of seed optical pulse.The mode that picopulse amplifies has two kinds, and regenerative amplification and row ripple amplify.The regenerative amplification technological merit is that amplifier gain is high, can reach 10
6-10
9But the regenerative amplification cavity configuration is complicated, and the paired pulses sequential requires very strict, need add electric light cavity dumping function simultaneously, and manufacture difficulty is very big.The advantage of row ripple amplifying technique is not need the regenerative amplification chamber, and is simple in structure, reliable and stable, and obtains higher-wattage output easily, and shortcoming is that the single-stage gain amplifier is little, generally can reach 10
3-10
4
Adopt Faraday polarization apparatus 11 to cooperate film polarizer 12 to realize the round trip amplification of laser.Adopt round trip to amplify mode, the effectively gain amplifier of boost amplifier.Realize that the mode that round trip is amplified is: behind the seed light process film polarizer 12, through Faraday polarization apparatus 11,45 ° of polarization state rotations; After amplifying for the first time; Seed light is reflected back toward laser crystal 5 inside and does the secondary amplification, and polarization state is rotated 45 ° once more during once more through Faraday polarization apparatus 11, with respect to laser polarization state half-twist before amplifying; So can reflect output through polarizer, thereby realize the amplification of laser round trip.
Employing is expanded the mode that bundle focuses on again earlier to psec seed source 13 laser, realizes the overlapping to greatest extent of seed laser and pump light, improves the extraction efficiency of amplifier.Pump light is dispersed through focusing on back entering laser crystal 5 then, and seed source output laser beam divergence is very little, near directional light, if seed light directly through crystal, because Duplication is low, can't obtain high extraction efficiency.Seed source is expanded bundle focus on again, can effectively promote extraction efficiency.
The mode that adopts convex lens to add upper reflector realizes the utilization once more for residual pump light, improves amplifier gain, can accomplish simultaneously and be reflected back toward the effect that the amplification second time is done in laser crystal inside after seed light is amplified for the first time.Because the Nd:YVO4 crystal is low to the absorptivity at 888.5nm place, adopt 30mm long, 0.6% the crystal of mixing still has nearly 20% pump light by the crystal absorption, adopts this measure can realize that the pump light more than 95% is absorbed by crystal.
Semiconductor diode pump source 1 is 150W power, 888.5nm wave band diode end-face pump, and its tail optical fiber core diameter is 400 microns, numerical aperture NA=0.22.
Laser crystal 5 is Nd:YVO4, and crystalline size is 3 * 3 * 30mm
3, crystal has 1.5 ° of angles of wedge, and crystal doping concentration is 0.5%～1%, and crystal length is positioned at 25～50mm.Prevent crystal self-oscillation under the high power pump, logical recirculated water accurately cools off temperature control to crystal.
In order to improve the extraction efficiency of amplifier, the polarization state during seed source laser process laser crystal is 45 ° of polarizations, so the placement of laser crystal is satisfied its polarization in 45 ° of directions.In order to increase seed light and pump light, must design the focal length of adjusting first lens 2, second lens 3, the 4th lens 8, the 5th lens 9, the 6th lens 10 in intracrystalline Duplication.
According to technique scheme, make up the high-gain round trip travelling-wave amplifier device that the picosecond laser pulse is amplified.When pumping luminous power 150w, obtain the power output of laser under the different seed light frequencies, when pulse recurrence rate was 100kHz, the amplifier power output was 5.14W, the seed source laser power 5mW that this moment is corresponding obtains amplifier gain greater than 1000.When laser power 5.14W, record beam quality factor M with the beam quality analyzer
2<1.5 8 hours stability of amplifier operation is less than 3%.Can find out that from the result the utility model travelling-wave amplifier has the gain amplifier height, good beam quality, advantage such as stable can be widely used in the picosecond laser application.
In sum, the utility model adopts two lens that seed source laser is expanded bundle earlier, and the mode that focuses on again with single lens then realizes the overlapping to greatest extent of seed laser and pump light, improves the extraction efficiency of amplifier; Adopt single lens and single plane mirror compound mode to realize the utilization once more to residual pump light, the seed laser reflected back laser crystal after will amplifying for the first time simultaneously is inner, and the secondary of accomplishing laser amplifies; The utility model amplifier has the gain amplifier height, output facula good quality, advantages such as good stability.
What need understand is: the above only is the preferred implementation of the utility model; For those skilled in the art; Under the prerequisite that does not break away from the utility model principle; Can also make some improvement and retouching, these improvement and retouching also should be regarded as the protection range of the utility model.
Claims (3)
1. be used for the high-gain round trip travelling-wave amplifier that the picosecond laser pulse is amplified, it is characterized in that: comprise semiconductor diode pump source, laser crystal and psec seed source, the semiconductor diode pump source is connected first lens; First lens are connected second lens, and second lens are connected first level crossing, and first level crossing is connected laser crystal; Laser crystal is connected the 3rd lens, and the 3rd lens are connected second level crossing, and said psec seed source is connected the film polarizer; The film polarizer is connected Faraday polarization apparatus, and Faraday polarization apparatus is connected the 6th lens, and the 6th lens are connected the 5th lens; The 5th lens are connected the 4th lens, and the 4th lens are connected with first level crossing mutually; Keep polarization state constant behind the pulse process film polarizer of psec seed source; Through 45 ° of Faraday polarization apparatus rear polarizer attitude rotations; Expand bundle through the 6th lens and the 5th lens again, the pulse of expanding after restrainting focuses on laser crystal inside through the 4th lens and first level crossing; The pump light that send in the semiconductor diode pump source is inner to laser crystal through first lens and second lens focus; Seed light is after the inner amplification for the first time of laser crystal; Seed light and the pump light that do not absorbed by crystal are through the 3rd collimated; Get back in the laser crystal through second flat mirror reflects again, amplification of seed light secondary and residual pump light are utilized once more; Laser pulse after secondary amplifies arrives Faraday polarization apparatus through first level crossing, the 4th lens, the 5th lens and the 6th lens; Amplifying laser polarization state through behind the Faraday polarization apparatus is rotated 45 ° once more; Polarization state is vertical with the polarization state that incides for the first time the film polarizer, and the laser that round trip is amplified reflects from the film polarizer.
2. the high-gain round trip travelling-wave amplifier that is used for picosecond laser pulse amplification according to claim 1; It is characterized in that: said semiconductor diode pump source is 150W power, 888.5nm wave band diode end-face pump; Its tail optical fiber core diameter is 400 microns, numerical aperture NA=0.22.
3. the high-gain round trip travelling-wave amplifier that is used for picosecond laser pulse amplification according to claim 1, it is characterized in that: said laser crystal is Nd:YVO4, and crystal has the angle of wedge, and crystal doping concentration is 0.5%～1%, and crystal length is positioned at 25～50mm.
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| CN201120562285XU CN202405610U (en) | 2011-12-29 | 2011-12-29 | High-gain double-route traveling-wave amplifier for picosecond laser pulse amplification |
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| CN201120562285XU CN202405610U (en) | 2011-12-29 | 2011-12-29 | High-gain double-route traveling-wave amplifier for picosecond laser pulse amplification |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510000A (en) * | 2011-12-29 | 2012-06-20 | 苏州德龙激光有限公司 | High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification |
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2011
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510000A (en) * | 2011-12-29 | 2012-06-20 | 苏州德龙激光有限公司 | High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120829 Termination date: 20141229 |
|
| EXPY | Termination of patent right or utility model |