CN201937162U - Semiconductor diode pump10W-graded 355nm ultraviolet laser - Google Patents
Semiconductor diode pump10W-graded 355nm ultraviolet laser Download PDFInfo
- Publication number
- CN201937162U CN201937162U CN2011200095253U CN201120009525U CN201937162U CN 201937162 U CN201937162 U CN 201937162U CN 2011200095253 U CN2011200095253 U CN 2011200095253U CN 201120009525 U CN201120009525 U CN 201120009525U CN 201937162 U CN201937162 U CN 201937162U
- Authority
- CN
- China
- Prior art keywords
- laser
- semiconductor diode
- frequency
- crystal
- lens
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Abstract
The utility model relates to a semiconductor diode pump 10W-graded 355nm ultraviolet laser. An optical coupling system is disposed at an output end of a semiconductor diode, a laser crystal is disposed at an output end of the optical coupling system and linked with a resonant cavity structure, a lens is disposed at an output end of the resonant cavity structure, a frequency-doubled crystal is disposed at an output end of the lens and linked with the lens, a 45-degree electric reflector and a 45-degree reflector are sequentially disposed at the output end of the lens, and the 45-degree reflector is linked with a frequency-tripled crystal. A single semiconductor diode pump laser crystal is adopted and outer cavity frequency multiplying technique is utilized, so that conversion of 1064nm fundamental frequency laser to 532nm frequency doubled laser is achieved, and 355nm ultraviolet laser is obtained through the sum frequency of the 1064nm fundamental laser to the 532nm frequency doubled laser. The semiconductor diode pump 10W-graded 355nm ultraviolet laser has the advantages of high conversion efficiency, fine beam quality, operational stability and the like.
Description
Technical field
The utility model relates to a kind of semiconductor diode pump 10W level 355nm ultraviolet laser.
Background technology
The output wave length of ultraviolet laser, concentration of energy, resolution height, focus point can be little of several micron number magnitudes, has wide practical use in fields such as the little processing of precise materials, photovoltaic, rapid shapings.The semiconductor diode pump ultraviolet laser has good beam quality, power stability is good, reliability is high, easy to use, plurality of advantages such as volume is little.At present, the whole world increases day by day to the demand of all-solid-state ultraviolet laser, and application constantly enlarges.External laser company (Coherent, Spectra-physics, JDSU) has released the semiconductor diode pump ultraviolet laser of average power greater than 10W, the domestic commercialization ultraviolet laser product that does not also have more than the 10W level, therefore, the development of high power UV laser has very important practical sense to shortening technological gap both domestic and external.
The realization of the solid 355nm Ultra-Violet Laser of semiconductor diode pump output is by the fundamental frequency light that sends from laser crystals such as Nd:YVO4 or Nd:YAG is carried out secondary frequency multiplication, then by fundamental frequency light and secondary frequency multiplication light with frequently obtaining.The pump light wavelength of usefulness is 808nm at present.Because laser crystal (Nd:YVO4) has strong absworption peak at the 808nm place, so adopt 808nm LD to come the pumping laser crystal usually, to obtain higher light light conversion efficiency (808nm is to 1064nm light light conversion efficiency 40%-60%), but because the influence of quantum loss effect, when pump power strengthens, crystal end-face produces very large heat, has a strong impact on the beam quality of output laser, even is easy to produce crystal cleavage or fracture.In order to obtain the basic mode running, the single-ended pumping laser output power of 808nm LD is less than 15W usually, and the both-end pumping laser output power is transformed into Ultra-Violet Laser power and will be lower than 8W less than 25W.The utility model adopts 888.5nm LD pumping Nd:YVO4 crystal, and particle directly is energized into upper laser level from ground state, has effectively reduced the quantum loss.Laser crystal can bear very high pump power (greater than 150W), the easier acquisition basic mode running of output laser.Though the light light conversion efficiency is little than 808nm LD pumping meeting, can improve by increasing measures such as crystal doping concentration and length.The final Ultra-Violet Laser power output that obtains is greater than 10W.
At present the coupled system that adopts of semiconductor end-pumped high-power laser is usually less than 1: 4, focuses on intracrystalline hot spot generally between 0.8-1.2mm, and the tail optical fiber core diameter is generally 200-600um.The utility model adopts the 100um core diameter, cooperates 1: 12 super large to amplify the frequency multiplication coupled system, has effectively compressed the angle of divergence of pump light in laser crystal, has reached the optimum Match between pump light and the oscillation light, improves the light light conversion efficiency.This kind measure is most important for low absorptivity 888.5nm pumping wavelength.
The frequency doubling technology that obtains Ultra-Violet Laser has two kinds: intracavity frequency doubling and cavity external frequency multiplication.Intracavity frequency doubling efficient height, and frequency tripling crystal place hot spot is bigger, has prolonged the useful life of crystal greatly.But, make laser cavity relatively more responsive because whole frequency-doubled conversion process is finished in laser cavity.The cavity external frequency multiplication technology, scioptics focus on fundamental frequency light and realize harmonic conversion, effectively raise the stability of laser cavity.Simultaneously, hot spot is less in the frequency tripling crystal, life-span of ultraviolet laser is produced a very large impact, for high power UV laser, usually crystal work will damage less than 1000 hours, and a function is realized changing in the position that external laser company adopts electrical micro-machine to change crystal.
Summary of the invention
The purpose of this utility model is to overcome the deficiency that prior art exists, and a kind of semiconductor diode pump 10W level 355nm ultraviolet laser is provided.
The purpose of this utility model is achieved through the following technical solutions:
Semiconductor diode pump 10W level 355nm ultraviolet laser, characteristics: the output of semiconductor diode is arranged optical coupling system, the output of optical coupling system is arranged laser crystal, laser crystal is connected cavity resonator structure, the output of cavity resonator structure is arranged lens, and the output of lens is arranged two frequency-doubling crystals, and two frequency-doubling crystals are connected lens, the output of lens is arranged 45 ° of electronic speculums and 45 ° of speculums successively, and 45 ° of speculums are connected the frequency tripling crystal.
Further, above-mentioned semiconductor diode pump 10W level 355nm ultraviolet laser, wherein, described semiconductor diode is that power output is the semiconductor diode of the 888.5nm wave band of 100W, its tail optical fiber core diameter is 100 microns, numerical aperture NA=0.22.
Further, above-mentioned semiconductor diode pump 10W level 355nm ultraviolet laser, wherein, described optical coupling system is that enlargement ratio is 1: 12 a optical coupling system.
Again further, above-mentioned semiconductor diode pump 10W level 355nm ultraviolet laser, wherein, described laser crystal is Nd:YVO4, its crystalline size is 4 * 4 * 40mm
3, crystal doping concentration is 0.6%.
Again further, above-mentioned semiconductor diode pump 10W level 355nm ultraviolet laser, wherein, described frequency tripling crystal is II class phase matched mode three lithium borates, its crystalline size is 4 * 4 * 25mm
3
The substantive distinguishing features of technical solutions of the utility model and progressive being mainly reflected in:
Adopt single semiconductor diode pump laser crystal, utilize the cavity external frequency multiplication technology, realize 1064nm fundamental frequency light to the conversion of 532nm frequency doubled light, obtain 355nm Ultra-Violet Laser to the 532nm frequency doubled light with frequency by 1064nm fundamental frequency light again.Have the conversion efficiency height, good beam quality, advantage such as stable is widely used in the Ultra-Violet Laser field.
Description of drawings
Below in conjunction with accompanying drawing technical solutions of the utility model are described further:
Fig. 1: semiconductor diode pump 10W level 355nm ultraviolet laser schematic diagram.
The implication of each Reference numeral sees the following form among the figure:
Embodiment
The utility model adds two 45 ° of speculums between frequency tripling crystal and lens, realize the point operation that changes of frequency tripling crystal near 45 ° of mirror angle of that sheet of lens by motorized adjustment, change number of spots and surpass 50, prolong ultraviolet laser useful life greatly.
As shown in Figure 1, semiconductor diode pump 10W level 355nm ultraviolet laser, the output of semiconductor diode 1 is arranged optical coupling system 2 and optical coupling system 3, the output of optical coupling system 3 is arranged laser crystal 5, laser crystal 5 is connected cavity resonator structure, cavity resonator structure comprises planoconvex lens 4, level crossing 6, level crossing 7, outgoing mirror 8 and level crossing 10, the output of cavity resonator structure is arranged lens 11, the output of lens 11 is arranged two frequency-doubling crystals 12, two frequency-doubling crystals 12 are connected lens 13, the output of lens 13 arranges that successively 45 ° of electronic speculums 14 and 15,45 ° of speculums of 45 ° of speculums 15 are connected frequency tripling crystal 16.
Semiconductor diode 1 is that power output is the 888.5nm semiconductor diode of 100W, and its tail optical fiber core diameter is 100 microns, numerical aperture NA=0.22.Optical coupling system 2 and optical coupling system 3 are that enlargement ratio is 1: 12 a optical coupling system.Laser crystal 5 is Nd:YVO4, and its crystalline size is 4 * 4 * 40mm
3, crystal doping concentration is 0.6%.Frequency tripling crystal 16 is II class phase matched mode three lithium borates, and crystal end-face adopts the Brewster's angle cutting, and its crystalline size is 4 * 4 * 25mm
3Between frequency tripling crystal 16 and lens 13, add 45 ° of electronic speculums 14 and 45 ° of speculums 15, realize the point operation that changes of frequency tripling crystal 16 by motorized adjustment near 45 ° of electronic speculum 14 angles of lens 13, reach and prolong the ultraviolet laser purpose in useful life.
Adopt 888.5nm centre wavelength semiconductor diode 1 pumping laser crystal 5, semiconductor diode 1 output 888.5nm pump light is coupled in the laser crystal 5 through 1: 12 super large enlargement ratio optical coupling system 2 and optical coupling system 3, the 1064nm laser that produces carries out vibrating in the chamber through the resonant cavity that is made of planoconvex lens 4, level crossing 6, level crossing 7, outgoing mirror 8 and level crossing 10, and modulates by 9 couples of 1064nm of acoustooptic Q-switching; The 1064nm fundamental frequency light scioptics 11 of modulation focus on two frequency-doubling crystals interior 12 and carry out the conversion of 1064nm fundamental frequency light to the 532nm frequency doubled light, the residue 1064nm fundamental frequency light of not finishing secondary frequency multiplication conversion and 532nm frequency doubled light focus in the frequency tripling crystal 16 once more through lens 13 and speculum 14 and speculum 15 to carry out and frequently, the 355nm Ultra-Violet Laser that obtains is exported from the one side of frequency tripling crystal Brewster's angle cutting.45 ° of electronic speculum 14 angles by the close lens of motorized adjustment realize the point operation that changes of frequency tripling crystal, prolong the laser purpose in useful life thereby reach.
Adopt the cavity external frequency multiplication technology, scioptics focus on fundamental frequency light and realize harmonic conversion, effectively raise the stability of laser cavity.Prolong the ultraviolet laser purpose in useful life for reaching, between frequency tripling crystal 16 and lens 13, add two 45 ° of speculums, realize the point operation that changes of frequency tripling crystal changing number of spots near the angle of 45 ° of electronic speculums 14 of that sheet of lens 13 by motorized adjustment above 50.Must consider the thermal focal length of laser crystal in the design laserresonator, the utility model designs laser cavity under the big pump power pumping of 95W, the thermal focal length F=200mm of laser crystal.Utilize winlase software to carry out the steady district figure that analog computation obtains the chamber, there is big steady district in laser: thermal focal F=190～530mm, so under high power pumping, laser can keep steady running.
According to technique scheme, make up the high power 355nm Ultra-Violet Laser apparatus of semiconductor diode pump, when pumping luminous power Pi=95w, the different frequency modulation is the power output of laser down, when modulating frequency f=40kHz, laser output power is 10.5W to the maximum, and pump light is about 11% to the conversion efficiency of 355nm Ultra-Violet Laser.Under this pump power, recording the UV laser pulses width is 24ns, M
2＜1.3.8 hours stability of this laser operation is less than 3%.
In sum, the utility model adopts single semiconductor diode pump laser crystal, utilize the cavity external frequency multiplication technology, realize 1064nm fundamental frequency light to the conversion of 532nm frequency doubled light, obtain 355nm Ultra-Violet Laser to the 532nm frequency doubled light with frequency by 1064nm fundamental frequency light again.Have the conversion efficiency height, good beam quality, advantage such as stable can be widely used in the Ultra-Violet Laser field.
It is emphasized that: above only is preferred embodiment of the present utility model, be not that the utility model is done any pro forma restriction, every foundation technical spirit of the present utility model all still belongs in the scope of technical solutions of the utility model any simple modification, equivalent variations and modification that above embodiment did.
Claims (5)
1. semiconductor diode pump 10W level 355nm ultraviolet laser, it is characterized in that: the output of semiconductor diode is arranged optical coupling system, the output of optical coupling system is arranged laser crystal, laser crystal is connected cavity resonator structure, the output of cavity resonator structure is arranged lens, and the output of lens is arranged two frequency-doubling crystals, and two frequency-doubling crystals are connected lens, the output of lens is arranged 45 ° of electronic speculums and 45 ° of speculums successively, and 45 ° of speculums are connected the frequency tripling crystal.
2. semiconductor diode pump 10W level 355nm ultraviolet laser according to claim 1, it is characterized in that: described semiconductor diode is that power output is the semiconductor diode of the 888.5nm wave band of 100W, its tail optical fiber core diameter is 100 microns, numerical aperture NA=0.22.
3. semiconductor diode pump 10W level 355nm ultraviolet laser according to claim 1 is characterized in that: described optical coupling system is that enlargement ratio is 1: 12 a optical coupling system.
4. semiconductor diode pump 10W level 355nm ultraviolet laser according to claim 1, it is characterized in that: described laser crystal is Nd:YVO4, its crystalline size is 4 * 4 * 40mm
3, crystal doping concentration is 0.6%.
5. semiconductor diode pump 10W level 355nm ultraviolet laser according to claim 1 is characterized in that: described frequency tripling crystal is II class phase matched mode three lithium borates, and its crystalline size is 4 * 4 * 25mm
3
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200095253U CN201937162U (en) | 2011-01-13 | 2011-01-13 | Semiconductor diode pump10W-graded 355nm ultraviolet laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011200095253U CN201937162U (en) | 2011-01-13 | 2011-01-13 | Semiconductor diode pump10W-graded 355nm ultraviolet laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201937162U true CN201937162U (en) | 2011-08-17 |
Family
ID=44448671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011200095253U Expired - Lifetime CN201937162U (en) | 2011-01-13 | 2011-01-13 | Semiconductor diode pump10W-graded 355nm ultraviolet laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201937162U (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510002A (en) * | 2011-12-29 | 2012-06-20 | 苏州德龙激光有限公司 | Semiconductor diode single-end pumped 355nm ultraviolet laser |
| CN102593708A (en) * | 2012-03-06 | 2012-07-18 | 南昌航空大学 | Double-wavelength-output all-solid-state laser based on Brewster angle |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN108604528A (en) * | 2015-12-22 | 2018-09-28 | 布鲁克道尔顿有限公司 | The mass spectrograph of laser system with laser desorption ion source and long life |
| CN113540949A (en) * | 2021-07-05 | 2021-10-22 | 苏州英谷激光有限公司 | End-pumped double-module double-crystal high-power nanosecond ultraviolet laser |
-
2011
- 2011-01-13 CN CN2011200095253U patent/CN201937162U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510002A (en) * | 2011-12-29 | 2012-06-20 | 苏州德龙激光有限公司 | Semiconductor diode single-end pumped 355nm ultraviolet laser |
| CN102593708A (en) * | 2012-03-06 | 2012-07-18 | 南昌航空大学 | Double-wavelength-output all-solid-state laser based on Brewster angle |
| CN108604528A (en) * | 2015-12-22 | 2018-09-28 | 布鲁克道尔顿有限公司 | The mass spectrograph of laser system with laser desorption ion source and long life |
| CN108604528B (en) * | 2015-12-22 | 2020-12-29 | 布鲁克道尔顿有限公司 | Mass spectrometer with laser desorption ion source and long-life laser system |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN107946891B (en) * | 2017-12-14 | 2019-09-17 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN113540949A (en) * | 2021-07-05 | 2021-10-22 | 苏州英谷激光有限公司 | End-pumped double-module double-crystal high-power nanosecond ultraviolet laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201937162U (en) | Semiconductor diode pump10W-graded 355nm ultraviolet laser | |
| WO2008055390A1 (en) | Third harmonic ultraviolet laser of semiconductor double end face pumping | |
| Lü et al. | Quasi-three-level Nd: LuVO4 laser under diode pumping directly into the emitting level | |
| CN101232148A (en) | Design method of semiconductor diode both-end pumping high power UV laser | |
| CN101719620B (en) | End-pumped high-power laser | |
| CN101777725A (en) | Full solid-state ultraviolet laser with third harmonic in diode pumping cavity | |
| CN102005694B (en) | Single-end pumped intra-cavity frequency doubled ultraviolet solid laser | |
| Lü et al. | All-solid-state Nd: LuVO4 laser operating at 1066 nm and 1343 nm under diode pumping into the emitting level | |
| CN104283101A (en) | All-solid-state single-frequency tunable red laser | |
| CN102510000B (en) | High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification | |
| JP2019526924A (en) | Method of generating a frequency doubled laser and a harmonic laser | |
| CN104051943A (en) | A diode pumped passive mode-locked Nd, Y: caF2all-solid-state femtosecond laser | |
| CN202423819U (en) | Laser diode end-pump ultraviolet laser generation device | |
| CN100461555C (en) | Quasi-continuous two-bar series inner cavity frequency multiflier high power green laser of 200 vatts grade | |
| CN202405611U (en) | Semiconductor diode single-end pumped 355nm ultraviolet laser | |
| CN102510002A (en) | Semiconductor diode single-end pumped 355nm ultraviolet laser | |
| CN102157892A (en) | High-power ultraviolet laser | |
| CN204103239U (en) | A kind of all solid state single frequency tunable red laser | |
| CN201349092Y (en) | All-solid-state electro-optic Q-switched green laser | |
| CN2765348Y (en) | Cavity dumping full-solid picosecond laser | |
| CN102738695A (en) | Semiconductor diode side-pump intracavity frequency doubling ultraviolet laser and method thereof | |
| CN101447639A (en) | Full solid state electro-optic modulation Q green laser | |
| CN102044837A (en) | High-power green laser for pumps at two ends of semiconductor diode | |
| CN100407520C (en) | Double end-face pump secondary harmonic solid laser creating method for superpower semiconductor | |
| Li et al. | Efficient 1061 and 1329 nm laser emission of Nd: CNGG lasers under 885 nm diode pumping into the emitting level |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee after: Suzhou Delphi Laser Co., Ltd. Address before: 215021 Suzhou Industrial Park, Jiangsu, Hong Zhong Road, No. 77 Patentee before: Suzhou Delphi Laser Co., Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110817 |