CN102157892A - High-power ultraviolet laser - Google Patents
High-power ultraviolet laser Download PDFInfo
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- CN102157892A CN102157892A CN 201110065973 CN201110065973A CN102157892A CN 102157892 A CN102157892 A CN 102157892A CN 201110065973 CN201110065973 CN 201110065973 CN 201110065973 A CN201110065973 A CN 201110065973A CN 102157892 A CN102157892 A CN 102157892A
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Abstract
The invention relates to a high-power ultraviolet laser, comprising a light source and a resonant cavity which are sequentially connected with a light path, wherein the resonant cavity is a folded resonant cavity with a Z-type oscillating light path. The high-power ultraviolet laser with the structure is provided with the folded resonant cavity, so any light-splitting device in the cavity is not required to add, thus being capable of realizing independent output of 355nm-wavelength lasers and 532nm-wavelength lasers and realizing a larger mode volume in a laser crystal and a smaller mode volume in a frequency doubling laser crystal at the same time so as to reach the purposes of low loss in the cavity and high output efficiency as well as strong output stability. The high-power ultraviolet laser is simple and compact in structure, long in service life, relatively low in cost and wide in applied range.
Description
Technical field
The present invention relates to the generating device of laser field, particularly ultraviolet light generating means field.
Background technology
The generation of ultraviolet laser comes from the generation and the development of photoelectron technology.At first from its principle, ultraviolet light wave why be better than infrared waves and visible light wave mainly be because: Ultra-Violet Laser can directly destroy the chemical bond processing material that connects the material atomic composition and can not destroy surrounding environment.The output wave length of ultraviolet laser, concentration of energy, the resolution height, focus point can be little of several micron number magnitudes.Therefore, ultraviolet laser has wide practical use in fields such as the little processing of precise materials, ultra-violet curing, photoetching.The semiconductor diode pump ultraviolet laser has good beam quality, power stability is good, reliability is high, easy to use, plurality of advantages such as volume is little.The research that utilizes the nonlinear frequency transformation technology to obtain high-power Ultra-Violet Laser output has in recent years become a research focus of laser technology field.At present, the whole world increases day by day to the demand of all-solid-state ultraviolet laser, and application is also in continuous expansion.
The realization of the solid Ultra-Violet Laser of semiconductor diode end pumping output be by to from
Nd:YVO 4 The fundamental frequency light that laser crystals such as (Nd-doped yttrium vanadates) sends carries out secondary frequency multiplication, then by fundamental frequency light and secondary frequency multiplication light with frequently obtain.Its pump light wavelength is 808nm.
It mainly adopts following several technology:
1, cavity external frequency multiplication: relevant (Coherent) company, spectrum physics company (SP) all adopt the method for cavity external frequency multiplication to realize green glow and Ultra-Violet Laser output.This method is that high power infrared laser is realized frequency-doubled conversion by a focusing system by nonlinear crystal.It is little to be characterized in that the focus point spot size requires, so the crystal ratio is easier to damage, to the requirement of crystal plated film than higher.For remedying this shortcoming, relevant company and spectrum physics company all adopt the method that crystal is moved automatically, carry out change place and realize the long-time reliably working of crystal after certain time on probation.This technology has very strict requirement to the control of crystal, and accurate detection and the discriminating gear of a cover, whole system more complicated are arranged.
2, intracavity frequency doubling: JDSU company, Photonics company, DPSSL company and Yuco company and some other German company adopt the mode of intracavity frequency doubling to realize Ultra-Violet Laser output.Because the raising of an order of magnitude is arranged outside the beam intensity ratio chamber in the laser chamber, realize same frequency conversion efficiency, this method is much lower to the plated film requirement of nonlinear crystal, and the working life of laser is also long under the therefore same crystal condition.But, owing in laser chamber, there are three wavelength to exist simultaneously, energy exchange is arranged each other, and these energy exchanges are subjected to the extraneous factor influence easily, so laser power output moment stability that the method produced and long-time reliability are not as cavity external frequency multiplication.
Summary of the invention
The objective of the invention is to have overcome above-mentioned shortcoming of the prior art, a kind of semiconductor diode pump light source that has is provided, adopt the intracavity frequency doubling mode, have higher stability and reliability, simple in structure, with low cost, and useful life is than long high-power ultraviolet laser.
In order to realize above-mentioned purpose, high-power ultraviolet laser of the present invention has following formation:
It comprises the light source resonant cavity that light path is linked in sequence, and described resonant cavity is the folded form resonant cavity of Z type for the vibration light path.
In this high-power ultraviolet laser, described light source is the semiconductor diode pump light source.
In this high-power ultraviolet laser, described folded form resonant cavity comprises the first spherical lens mirror, second spherical lens, first level crossing, laser crystal, Q switching, first non-spherical lens, two frequency-doubling crystals, second non-spherical lens, frequency tripling crystal and second level crossing that light path is linked in sequence, the be coupled beam projecting end of described light source of the light incident end of the described first spherical lens mirror, the reflecting surface of described second non-spherical lens is the laser output of this high-power ultraviolet laser.
In this high-power ultraviolet laser, described laser crystal is that output wavelength is 1064nm's
Nd:YVO 4 Nd-doped yttrium vanadate,
Nd:YAGNeodymium-doped yttrium-aluminum garnet,
Nd:YLFThe neodymium-doped yttrium-fluoride lithium or
Nd:GlassThe neodymium doped glass laser crystal.
In this high-power ultraviolet laser, the doping content of described laser crystal is 0.3%.
In this high-power ultraviolet laser, the radius of described first non-spherical lens is-300mm that the radius of described second non-spherical lens is-100mm.
In this high-power ultraviolet laser, it is that the reflective wavelength of 1064nm is the film of 532nm that described first non-spherical lens is coated with the printing opacity wavelength, and it is that 1064nm and the reflective wavelength of 532nm are the film of 355nm that described second non-spherical lens is coated with the printing opacity wavelength.
In this high-power ultraviolet laser, the matching way of described two frequency-doubling crystals and frequency tripling crystal is: a kind of in I class phase matched mode LBO three lithium borate optical crystals, II class phase matched mode KTP potassium dihydrogen phosphate optical crystal, II class phase matched mode BBO barium metaborate optical crystal or the II class phase matched mode CLBO cesium hexa borate lithium optical crystal.
In this high-power ultraviolet laser, described second level crossing is coated with the film that the printing opacity wavelength is 1064nm, 532nm and 355nm.
Adopted the high-power ultraviolet laser of this invention, because it has the folded form resonant cavity, therefore, this ultraviolet laser does not need to add light-dividing device in any chamber, can realize the independent output of 355nm wavelength laser and 532nm wavelength laser, and can be implemented in less mode volume in mode volume bigger in the laser crystal and the frequency doubling laser crystal simultaneously, make that the resonant cavity internal loss is little, the delivery efficiency height, and output stability is strong.The outer laser structure of high-power purple of the present invention is simple, compact, and useful life is longer, and cost is cheap relatively, and has wide range of applications.
Description of drawings
Fig. 1 is the structural representation of high-power ultraviolet laser of the present invention.
Embodiment
In order more to be expressly understood technology contents of the present invention, describe in detail especially exemplified by following examples.
As shown in Figure 1, be the structural representation of high-power ultraviolet laser of the present invention.
In one embodiment, described ultraviolet laser comprises the light source resonant cavity that light path is linked in sequence, and described resonant cavity is the folded form resonant cavity of Z type for the vibration light path.
Wherein, described light source is that power output is 30W, the semiconductor diode pump light source 1 of output wavelength 808nm pump light.Described folded form resonant cavity comprises the first spherical lens mirror 2, second spherical lens 3, first level crossing 4, laser crystal 5, Q switching (Q value of cavity configuration switch) 6, first non-spherical lens 7, two frequency-doubling crystals 8, second non-spherical lens 9, frequency tripling crystal 10 and second level crossing 11 that light path is linked in sequence, the be coupled beam projecting end of described light source of the light incident end of the described first spherical lens mirror 2, the reflecting surface of described second non-spherical lens 9 is the laser output of this high-power ultraviolet laser.
In this embodiment, described laser crystal 5 is 1064nm's for output wavelength
Nd:YVO 4 The Nd-doped yttrium vanadate laser crystal.In other selectable execution mode, this laser crystal 5 can for
Nd:YAGNeodymium-doped yttrium-aluminum garnet,
Nd:YLFThe neodymium-doped yttrium-fluoride lithium or
Nd:GlassThe neodymium doped glass laser crystal.
In this embodiment, the radius of described first non-spherical lens 7 is-300mm, and to be coated with the printing opacity wavelength be that the reflective wavelength of 1064nm is the film of 532nm.The radius of described second non-spherical lens 9 is-100mm, and to be coated with the printing opacity wavelength be that 1064nm and the reflective wavelength of 532nm are the film of 355nm.Described second level crossing 11 is coated with the film that the printing opacity wavelength is 1064nm, 532nm and 355nm.The matching way of described two frequency-doubling crystals 8 and frequency tripling crystal 10 is I class phase matched mode LBO (three lithium borate optical crystals).In other selectable execution mode, the matching way of described two frequency-doubling crystals 8 and frequency tripling crystal 10 can also be II class phase matched mode KTP(potassium dihydrogen phosphate optical crystal), II class phase matched mode BBO(barium metaborate optical crystal) or II class phase matched mode CLBO(cesium hexa borate lithium optical crystal) in a kind of.
A kind of preferred embodiment in, described semiconductor diode pump light source 1 connects described resonant cavity by a tail optical fiber, described tail optical fiber core diameter is 400 microns.
In another preferred embodiment, the doping content of described laser crystal 5 is 0.3%.This laser crystal 5 is of a size of 3 * 3 * 12 m
3
Another preferred embodiment in, the crystalline size of described two frequency-doubling crystals 8 and frequency tripling crystal 10 is 3 * 3 * 12 m
3
In an application of the invention, adopt semiconductor diode to constitute the end pumped laser crystal, the 808nm pump light of output is coupled in the laser crystal through the spherical optics coupled system that is made of two spherical lenses, the 1064nm laser that produces carries out vibrating in the chamber through the resonant cavity that is made of four level crossings, and is modulated by Q switching; 1064nm fundamental frequency light after the modulation is-lens of 300mm that these lens are coated with HR@1064nm, HT@532nm through radius.But part through 532nm in this lens filtering fundamental frequency light.The 1064nm fundamental frequency light of reflection carries out the conversion of 1064nm fundamental frequency light to the 532nm frequency doubled light through two frequency-doubling crystals, and the 1064nm fundamental frequency light of not finishing frequency-doubled conversion passes through radius with the 532nm frequency doubled light and is-lens of 100mm, these lens are coated with HR@1064nm ﹠amp; 532nm, HT@355nm.The 1064nm of reflection and the frequency doubled light of 532nm are through frequency tripling crystal and frequency, and the 355nm Ultra-Violet Laser that obtains, this Ultra-Violet Laser are thoroughly through being coated with HR@1064nm ﹠amp; 532nm ﹠amp; Vibration back and forth in the chamber after the flat mirror reflects of 355nm, last 355nm Ultra-Violet Laser is through the one side output of the lens of HT@355nm.
When specific design is used, the high-power ultraviolet laser of end pumping of the refrative cavity structure of power output 1W, main 30W semiconductor diode by the magnetic tape trailer fibre, laser crystal, two frequency-doubling crystal LBO, frequency tripling crystal LBO, the element that waits of Q switching is formed.It is the 808nm semiconductor diode of 30W that semiconductor diode adopts power output, and its tail optical fiber core diameter is 400 microns, numerical aperture NA=0.22.Laser crystal is
Nd:YVO 4 , its crystalline size is 3 * 3 * 12 mm, crystal doping concentration is 0.3%.Perhaps
Nd:YAG,
Nd:YLF,
Nd:GlassLaser crystal carries out accurate temperature controlling by TEC.Two frequency-doubling crystals are I class phase matched mode LBO, and its crystalline size is 3 * 3 * 12; Perhaps be II class LBO, II class KTP, II class BBO, II class CLBO, adopt TEC(semiconductor heat electric refrigerator) two frequency-doubling crystals are carried out strict temperature control.The frequency tripling crystal is I class phase matched mode LBO, and its crystalline size is 3 * 3 * 12 mm; Perhaps be I class LBO, II class KTP, II class BBO, II class CLBO, adopt TEC that two frequency-doubling crystals are carried out strict temperature control.
Adopt the mode of intracavity frequency doubling to realize high-power 355nm Ultra-Violet Laser output, pumping source adopts semiconductor diode, pump light focuses on the laser crystal through the spherical optics coupled system, amplifies and the running of employing acousto-optic Q modulation technology realization 1064nm quasi-continuous lasing by resonant cavity.Utilize two frequency-doubling crystals to carry out frequency inverted and obtain 532nm laser, utilize simultaneously first-harmonic (1064nm) and second harmonic (532nm) in the laserresonator and (1064nm+532nm → 355nm) obtain the 355nm ultraviolet pulse laser to export frequently.
Have bigger mode volume in the resonant cavity of the present invention, the frequency-doubling crystal place has less hot spot simultaneously, has improved frequency-doubling conversion efficiency.Utilize the spherical optics coupled system, guarantee that the oscillating laser at laser crystal place's pump light and crystal place reaches good mould coupling, improve the fundamental frequency light conversion efficiency.
Adopt intracavity frequency doubling, utilize light intensity higher in the chamber to realize the non-linear frequency conversion, by the SHG(secondary harmonizing wave multiple frequency) and THG(triple-frequency harmonics frequency multiplication) beam diameter do not need to focus on very little hot spot and just can obtain to realize high conversion efficiency than higher light intensity.Can significantly reduce the probability of crystal damage, and the method is quite low to the plated film requirement of nonlinear crystal, under same crystal and plated film condition, the working life of ultraviolet laser of the present invention is also longer.
Adopted the high-power ultraviolet laser of this invention, because it has the folded form resonant cavity, therefore, this ultraviolet laser does not need to add light-dividing device in any chamber, can realize the independent output of 355nm wavelength laser and 532nm wavelength laser, and can be implemented in less mode volume in mode volume bigger in the laser crystal and the frequency doubling laser crystal simultaneously, make that the resonant cavity internal loss is little, the delivery efficiency height, and output stability is strong.The outer laser structure of high-power purple of the present invention is simple, compact, and useful life is longer, and cost is cheap relatively, and has wide range of applications.
Claims (9)
1. a high-power ultraviolet laser is characterized in that, described ultraviolet laser comprises the light source resonant cavity that light path is linked in sequence, and described resonant cavity is the folded form resonant cavity of Z type for the vibration light path.
2. high-power ultraviolet laser according to claim 1 is characterized in that, described light source is semiconductor diode pump light source (1).
3. according to each described high-power ultraviolet laser in claim 1 or 2, it is characterized in that, described folded form resonant cavity comprises the first spherical lens mirror (2) that light path is linked in sequence, second spherical lens (3), first level crossing (4), laser crystal (5), Q switching (6), first non-spherical lens (7), two frequency-doubling crystals (8), second non-spherical lens (9), frequency tripling crystal (10) and second level crossing (11), the be coupled beam projecting end of described light source of the light incident end of the described first spherical lens mirror (2), the reflecting surface of described second non-spherical lens (9) is the laser output of this high-power ultraviolet laser.
4. high-power ultraviolet laser according to claim 3 is characterized in that, described laser crystal (5) is 1064nm's for output wavelength
Nd:YVO 4 Nd-doped yttrium vanadate,
Nd:YAGNeodymium-doped yttrium-aluminum garnet,
Nd:YLFThe neodymium-doped yttrium-fluoride lithium or
Nd:GlassThe neodymium doped glass laser crystal.
5. high-power ultraviolet laser according to claim 4 is characterized in that, the doping content of described laser crystal (5) is 0.3%.
6. high-power ultraviolet laser according to claim 3 is characterized in that, the radius of described first non-spherical lens (7) is-300mm that the radius of described second non-spherical lens (9) is-100mm.
7. high-power ultraviolet laser according to claim 6, it is characterized in that, it is that the reflective wavelength of 1064nm is the film of 532nm that described first non-spherical lens (7) is coated with the printing opacity wavelength, and it is that 1064nm and the reflective wavelength of 532nm are the film of 355nm that described second non-spherical lens (9) is coated with the printing opacity wavelength.
8. high-power ultraviolet laser according to claim 3, it is characterized in that the matching way of described two frequency-doubling crystals (8) and frequency tripling crystal (10) is: a kind of in I class phase matched mode LBO three lithium borate optical crystals, II class phase matched mode KTP potassium dihydrogen phosphate optical crystal, II class phase matched mode BBO barium metaborate optical crystal or the II class phase matched mode CLBO cesium hexa borate lithium optical crystal.
9. high-power ultraviolet laser according to claim 3 is characterized in that, described second level crossing (11) is coated with the film that the printing opacity wavelength is 1064nm, 532nm and 355nm.
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| CN 201110065973 CN102157892A (en) | 2011-03-18 | 2011-03-18 | High-power ultraviolet laser |
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| CN 201110065973 CN102157892A (en) | 2011-03-18 | 2011-03-18 | High-power ultraviolet laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522690A (en) * | 2011-12-31 | 2012-06-27 | 厦门大学 | Nd3<+>-doped gain-medium-based intra-cavity sum-frequency continuous-wave ultraviolet laser |
| CN102522691A (en) * | 2011-12-31 | 2012-06-27 | 厦门大学 | Neodymium-doped continuous ultraviolet laser adopting linear cavity |
| CN102522692A (en) * | 2011-12-31 | 2012-06-27 | 厦门大学 | Neodymium-doped continuous ultraviolet laser adopting V-shaped refrative cavity |
| CN104283092A (en) * | 2014-10-13 | 2015-01-14 | 南京海锐特激光设备有限公司 | Nd: Yag ceramic crystal laser |
| CN105071214A (en) * | 2015-09-22 | 2015-11-18 | 山东大学 | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser |
| CN115832857A (en) * | 2023-02-14 | 2023-03-21 | 长春理工大学 | Compact long-pulse pump laminated variable-frequency high-energy Q-switched laser and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402390A (en) * | 2002-08-13 | 2003-03-12 | 深圳市大族激光科技股份有限公司 | High-efficiency high power third harmonic wave laser generating technique |
| CN1635670A (en) * | 2004-12-31 | 2005-07-06 | 西北大学 | Laser diode pumping full-solid ultraviolet pulse laser |
-
2011
- 2011-03-18 CN CN 201110065973 patent/CN102157892A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402390A (en) * | 2002-08-13 | 2003-03-12 | 深圳市大族激光科技股份有限公司 | High-efficiency high power third harmonic wave laser generating technique |
| CN1635670A (en) * | 2004-12-31 | 2005-07-06 | 西北大学 | Laser diode pumping full-solid ultraviolet pulse laser |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102522690A (en) * | 2011-12-31 | 2012-06-27 | 厦门大学 | Nd3<+>-doped gain-medium-based intra-cavity sum-frequency continuous-wave ultraviolet laser |
| CN102522691A (en) * | 2011-12-31 | 2012-06-27 | 厦门大学 | Neodymium-doped continuous ultraviolet laser adopting linear cavity |
| CN102522692A (en) * | 2011-12-31 | 2012-06-27 | 厦门大学 | Neodymium-doped continuous ultraviolet laser adopting V-shaped refrative cavity |
| CN104283092A (en) * | 2014-10-13 | 2015-01-14 | 南京海锐特激光设备有限公司 | Nd: Yag ceramic crystal laser |
| CN105071214A (en) * | 2015-09-22 | 2015-11-18 | 山东大学 | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser |
| CN115832857A (en) * | 2023-02-14 | 2023-03-21 | 长春理工大学 | Compact long-pulse pump laminated variable-frequency high-energy Q-switched laser and method |
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Application publication date: 20110817 |