CN202423819U - Laser diode end-pump ultraviolet laser generation device - Google Patents
Laser diode end-pump ultraviolet laser generation device Download PDFInfo
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- CN202423819U CN202423819U CN2012200015573U CN201220001557U CN202423819U CN 202423819 U CN202423819 U CN 202423819U CN 2012200015573 U CN2012200015573 U CN 2012200015573U CN 201220001557 U CN201220001557 U CN 201220001557U CN 202423819 U CN202423819 U CN 202423819U
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Abstract
The utility model discloses a laser diode end-pump ultraviolet laser generation device, which comprises a fiber-coupled semiconductor laser pumping source, an optical coupling system, a laser resonant cavity, a laser operating substance, a Q-switched device, a frequency doubling crystal, a frequency tripling crystal and an optical spectroscope, wherein the optical coupling system consists of a first optical lens and a second optical lens; the laser resonant cavity consists of three laser mirrors; the laser resonant cavity is a V-shaped or L-shaped resonant cavity consisting of a first laser mirror, a second laser mirror and a third laser mirror; and the first laser mirror, the laser operating substance, the Q-switched device, the optical spectroscope, the second laser mirror, the frequency tripling crystal, the frequency doubling crystal and the third laser mirror are sequentially arranged along an optical path, and form a folding resonant cavity. An intra-cavity frequency doubling mode is adopted, so that the device has the advantages of high stability and reliability, simple structure, low cost and long service life.
Description
Technical field
The utility model generating device of laser technical field is a kind of laser diode end-face pump Ultra-Violet Laser generating means specifically.
Background technology
Laser processing technology is at present just in flourish emerging process technology.Development along with laser technology; Laser processing is from utilizing high-power carbon dioxide laser at first; Carry out the transition to gradually and mainly utilize the solid state laser of 1 micron waveband to process, and develop to the direction of high power fiber laser, all solid state femto-second laser and ultraviolet laser.Because the effect of high-power Ultra-Violet Laser and material shows as direct vaporization characteristic (molecular link is directly torn) under the light laser effect; Do not relate to melting process; Its factory interface consolidation, smooth; Therefore crudy is far superior to adopt the system of processing of infrared laser, is specially adapted to various commercial Application that crudy is had higher requirements, like work such as the capillary processing on the electronics industry, material cut, figuring of surface, precise formings.Therefore, ultraviolet laser has wide practical use in fields such as the little processing of precise materials, ultra-violet curing, photoetching.The semiconductor diode pump ultraviolet laser has good beam quality, power stability is good, reliability is high, easy to use, plurality of advantages such as volume is little.The research that utilizes the nonlinear frequency transformation technology to obtain high-power Ultra-Violet Laser output has in recent years become a research focus of laser technology field.At present, the whole world increases the increasing demand of all-solid-state ultraviolet laser, and application is also in continuous expansion.
The realization of the solid Ultra-Violet Laser output of semiconductor diode end pumping is through the fundamental frequency light that sends from Nd:YVO4 working-laser materials such as (Nd-doped yttrium vanadates) being carried out secondary frequency multiplication, obtaining through fundamental frequency light and the photosynthetic frequency of secondary frequency multiplication then.Its pump light wavelength mainly is 808nm.
Several kinds of technology below it mainly adopts:
1, cavity external frequency multiplication: relevant (Coherent) company, spectrum physics company (SP) all adopt the method for cavity external frequency multiplication to realize green glow and Ultra-Violet Laser output.This method is that high power infrared laser is realized frequency-doubled conversion through a focusing system through nonlinear crystal.It is little to be characterized in that the focus point spot size requires, so the crystal ratio is easier to damage, to the requirement of crystal plated film than higher.For remedying this shortcoming, relevant company and spectrum physics company all adopt the method that crystal is moved automatically, after necessarily trying out the time, carry out change place and realize the long-time reliably working of crystal.This technology has very strict requirement to the control of crystal, and accurate detection and the discriminating gear of a cover, whole system more complicated are arranged.
2, intracavity frequency doubling: JDSU company, Photonics company, DPSSL company and Yuco company and some other German company adopt the mode of intracavity frequency doubling to realize Ultra-Violet Laser output.Because the raising of an one magnitude is arranged outside the beam intensity ratio chamber in the laser chamber, realize same frequency conversion efficiency, this method is much lower to the plated film requirement of nonlinear crystal, and the working life of laser is also long under the therefore same crystal condition.But; Owing in laser chamber, there are three wavelength to exist simultaneously, energy exchange is arranged each other, and these energy exchanges receive the extraneous factor influence easily; So laser power output moment stability and long-time reliability that the method produced are not so good as cavity external frequency multiplication.
Summary of the invention
The purpose of the utility model is to overcome the deficiency of prior art; A kind of laser diode end-face pump Ultra-Violet Laser generating means is provided, and it is a kind of semiconductor diode pump light source that has, and adopts the intracavity frequency doubling mode; Have higher stability and reliability; Simple in structure, with low cost, and useful life is than long Ultra-Violet Laser generating means.
The goal of the invention of the utility model is achieved in that a kind of laser diode end-face pump Ultra-Violet Laser generating means, it is characterized in that: the optical coupling system that it comprises optical fiber coupling semiconductor laser pumping source, be made up of first optical lens and second optical lens, laserresonator, working-laser material, Q-switching device, two frequency-doubling crystals, frequency tripling crystal and the spectroscope be made up of three laser mirrors; The V-type that said laser resonant cavity is made up of first laser mirror, second laser mirror and the 3rd laser mirror or the resonant cavity of L type; Wherein, first laser mirror, working-laser material, Q-switching device, spectroscope, second laser mirror, frequency tripling crystal, two frequency-doubling crystals and the 3rd laser mirror are placed and formation folded form resonant cavity along the light path order.
Said semiconductor diode pump light source is an optical fiber coupling high power semiconductor lasers.
Said working-laser material is placed near first laser mirror; First laser mirror for high anti-to 1064nm, 808nm is anti-reflection and the responsible pump light that sees through makes it to incide in the working-laser material and reflects the level crossing of base frequency oscillation; The second chamber mirror for to 1064nm, 532nm high anti-, 355nm is anti-reflection and responsible reflection fundamental frequency light and frequency doubled light are exported the level crossing of ultraviolet light; The 3rd laser mirror be radius of curvature be negative 200mm, to 1064nm, the high anti-spherical mirror of 532nm.
Said Q-switching device is an acoustooptic Q-switching.
Described spectroscope is that level crossing and relative light direction of principal axis are placed with Brewster's angle, and spectroscope is towards the one side high polish of Q-switching device, towards a plated film of ultraviolet outgoing mirror.
The size of described two frequency-doubling crystals and frequency tripling crystal is 3 * 3 * 15mm.
Described the 3rd laser mirror is a spherical mirror, and its radius of curvature is negative 200mm, the high-reflecting film of minute surface plating 1064nm, 532nm.
The beneficial effect of the utility model is:
The utility model is owing to have the folded form resonant cavity; And adopt the laser mirror of different curvature radius to be optimized according to the thermal lensing effect of working-laser material; Can be implemented in less mode volume in mode volume bigger in the working-laser material and the double-frequency laser operation material simultaneously; Make the laser output beam quality good, delivery efficiency is high, and output stability is strong.The outer laser structure of high-power purple of the present invention is simple, compact, and useful life is longer, and cost is cheap relatively, suitable extensive use.
Description of drawings
Accompanying drawing 1 is the structural representation of the Ultra-Violet Laser generating means of the utility model.
Accompanying drawing 2 is the ultraviolet laser chamber internal schema distribution map of the utility model
Embodiment
Below in conjunction with accompanying drawing the present invention is done further description.
Shown in illustrated in figures 1 and 2, the described laser diode end-face pump Ultra-Violet Laser of the utility model generating means, it is the refrative cavity structure of ultraviolet power output 1.5W.The optical coupling system that this generating device of laser comprises the 3rd laser mirror optical fiber coupling semiconductor laser pumping source 1, be made up of first optical lens 2 and second optical lens 3, the laserresonator of forming by three laser mirrors, working-laser material 5, Q-switching device 6, two frequency-doubling crystals 10, frequency tripling crystal 9 and spectroscope 7; The V-type that said laser resonant cavity is made up of first laser mirror 4, second laser mirror 8 and the 3rd laser mirror 11 or the resonant cavity of L type; Wherein, first laser mirror 4, working-laser material 5, Q-switching device 6, spectroscope 7, second laser mirror 8, frequency tripling crystal 9, two frequency-doubling crystals 10 and the 3rd laser mirror 11 are placed and are constituted the folded form resonant cavity along the light path order.
During this laser diode end-face pump Ultra-Violet Laser generating means work, pump light warp first optical lens 2 collimations by source 1 output of the 3rd laser mirror optical fiber coupling semiconductor laser pumping incide working-laser material 5 again after second optical lens 3 focuses on; Working-laser material 5 produces fundamental frequency light and receives Q-switching device 6 modulation after receiving pumping; Fundamental frequency light after the modulation passes spectroscope 7 and is reflected by second laser mirror 8; Passing frequency tripling crystal 9 then injects two frequency-doubling crystals 10 and produces second harmonic; Fundamental frequency light and second harmonic are through the 3rd laser mirror 11 reflected backs, two frequency-doubling crystals 10 and produce second harmonic once more; The second harmonic that produces through two frequency-doubling crystals, 10 bodies for twice gets into frequency tripling crystal 9 once more and produces triple-frequency harmonics with residue fundamental frequency light; The triple-frequency harmonics that produces at last is by outside second laser mirror, 8 output cavities, and fundamental frequency light and second harmonic are by in second laser mirror, the 8 reflected back chambeies, and spectroscope 7 reflects outside the chamber with the fundamental frequency light transmission and with second harmonic.
The 3rd laser mirror optical fiber coupling semiconductor laser pumping source 1 is optical fiber coupling high power semiconductor lasers, and power is output as 30W, and wavelength is 808nm or 880nm, and the optical fiber pigtail diameter is 400 μ m, and numerical aperture is 0.22.The spot diameter of pump light in coupled system enters into working-laser material is about 400 μ m.
The working-laser material 5 that above-mentioned generating device of laser adopts is 0.3% for doping content; Output wavelength is 1063nm; Length is the Nd:YVO4 Nd-doped yttrium vanadate crystal of 3 * 3 * 12mm, perhaps Nd:YAG neodymium-doped yttrium-aluminum garnet, Nd:YLF neodymium-doped yttrium-fluoride lithium or Nd:Glass neodymium doped glass working-laser material.
The spectroscope 7 that above-mentioned generating device of laser adopts is placed with Brewster's angle for level crossing and relative light direction of principal axis.Spectroscope 7 is towards the one side high polish of Q-switching device 6, and towards a plated film of the second chamber mirror, anti-reflection to fundamental frequency light, the humorous wave height of secondary frequency multiplication is anti-.
The size of above-mentioned two frequency-doubling crystals 10 and frequency tripling crystal 9 is 3 * 3 * 15mm.During this time, two frequency-doubling crystals 10 are I class phase matched mode LBO three lithium borate optical crystals, are of a size of 3 * 3 * 15mm, and two end face platings of crystal anti-reflection film is anti-reflection to 1064nm and 532nm; Also a kind of in II class phase matched mode KTP potassium dihydrogen phosphate optical crystal, II class phase matched mode BBO barium metaborate optical crystal or the II class phase matched mode CLBO cesium hexa borate lithium optical crystal.Said frequency tripling crystal 9 is of a size of 3 * 3 * 15mm for II class phase matched mode LBO three lithium borate optical crystals, and two end faces platings of crystal anti-reflection film is anti-reflection to 1064nm, 532nm and 355nm; Also can be a kind of in II class phase matched mode KTP potassium dihydrogen phosphate optical crystal, II class phase matched mode BBO barium metaborate optical crystal or the II class phase matched mode CLBO cesium hexa borate lithium optical crystal.
During this time, working-laser material 5 is placed near first laser mirror 4; First laser mirror 4 for to 1064nm high anti-, 808nm is anti-reflection and the responsible pump light that sees through makes it to incide in the working-laser material and reflects the level crossing of base frequency oscillation; Second laser mirror 8 for to 1064nm, 532nm high anti-, 355nm is anti-reflection and responsible reflection fundamental frequency light and frequency doubled light are exported the level crossing of ultraviolet light; The 3rd laser mirror 11 for radius of curvature for negative 200mm, to 1064nm, the high anti-spherical mirror of 532nm.
The Q-switching device 6 that laser adopts is the acousto-optic Q modulation switch, also can be electro-optical modulation device or passive modulation device.
The 3rd above-mentioned laser mirror 11 is a spherical mirror, and its radius of curvature is negative 200mm, the high-reflecting film of minute surface plating 1064nm, 532nm.
The utility model adopts TEC (semiconductor heat electric refrigerator) that nonlinear crystal is carried out strict temperature control.Temperature-controlled precision is higher than ± 0.05 degree.
The employed working-laser material of the utility model instance corresponding thermal focal when pumping light power is 30W is measured as 250mm by experiment.After adopting radius of curvature to be the 3rd laser mirror 11 of 200mm, suitably regulate the ultraviolet basic mode output that chamber length can be stable.The chamber mode diameter is 450 μ m in working-laser material 5, is 180 μ m at frequency tripling crystal 9 inner chamber mode diameters.Can be implemented in less spot size in mode volume bigger in the working-laser material 5 and the double-frequency laser operation material 5 simultaneously, it is good to make that laser has an output beam quality, and delivery efficiency is high, and the strong characteristics of output stability.The outer laser structure of high-power purple of the present invention is simple, compact, and useful life is longer, and cost is cheap relatively, and has wide range of applications.
Claims (7)
1. laser diode end-face pump Ultra-Violet Laser generating means is characterized in that: the optical coupling system that it comprises optical fiber coupling semiconductor laser pumping source (1), be made up of first optical lens (2) and second optical lens (3), laserresonator, working-laser material (5), Q-switching device (6), two frequency-doubling crystals (10), frequency tripling crystal (9) and the spectroscope (7) be made up of three laser mirrors; Said laser resonant cavity is by first laser mirror (4), second laser mirror (8) and the V-type of the 3rd laser mirror (11) formation or the resonant cavity of L type; Wherein, first laser mirror (4), working-laser material (5), Q-switching device (6), spectroscope (7), second laser mirror (8), frequency tripling crystal (9), two frequency-doubling crystals (10) and the 3rd laser mirror (11) are placed and formation folded form resonant cavity along the light path order.
2. laser diode end-face pump Ultra-Violet Laser generating means according to claim 1 is characterized in that: said semiconductor diode pump light source (1) is optical fiber coupling high power semiconductor lasers.
3. laser diode end-face pump Ultra-Violet Laser generating means according to claim 1 is characterized in that: said working-laser material is placed near first laser mirror (4); First laser mirror for high anti-to 1064nm, 808nm is anti-reflection and the responsible pump light that sees through makes it to incide in the working-laser material and reflects the level crossing of base frequency oscillation; The second chamber mirror (8) for to 1064nm, 532nm high anti-, 355nm is anti-reflection and responsible reflection fundamental frequency light and frequency doubled light are exported the level crossing of ultraviolet light; The 3rd laser mirror (11) for radius of curvature for negative 200mm, to 1064nm, the high anti-spherical mirror of 532nm.
4. laser diode end-face pump Ultra-Violet Laser generating means according to claim 1 is characterized in that: said Q-switching device (6) is an acoustooptic Q-switching.
5. laser diode end-face pump Ultra-Violet Laser generating means according to claim 1; It is characterized in that: described spectroscope (7) is placed with Brewster's angle for level crossing and relative light direction of principal axis; Spectroscope (7) is towards the one side high polish of Q-switching device (6), towards a plated film of ultraviolet outgoing mirror.
6. laser diode end-face pump Ultra-Violet Laser generating means according to claim 1 is characterized in that: the size of described two frequency-doubling crystals (10) and frequency tripling crystal (9) is 3 * 3 * 15mm.
7. laser diode end-face pump Ultra-Violet Laser generating means according to claim 1 is characterized in that: described the 3rd laser mirror (11) is a spherical mirror, and its radius of curvature is negative 200mm, the high-reflecting film of minute surface plating 1064nm, 532nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200015573U CN202423819U (en) | 2012-01-05 | 2012-01-05 | Laser diode end-pump ultraviolet laser generation device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN2012200015573U CN202423819U (en) | 2012-01-05 | 2012-01-05 | Laser diode end-pump ultraviolet laser generation device |
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| CN202423819U true CN202423819U (en) | 2012-09-05 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269728A (en) * | 2014-10-24 | 2015-01-07 | 许昌学院 | Semiconductor laser of solid-state ultraviolet laser |
| CN104409962A (en) * | 2014-11-28 | 2015-03-11 | 江苏天元激光科技有限公司 | Diode end face pumping all-solid-state ultraviolet laser |
| CN105071214A (en) * | 2015-09-22 | 2015-11-18 | 山东大学 | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser |
| CN106058630A (en) * | 2016-07-04 | 2016-10-26 | 深圳市杰普特光电股份有限公司 | End-pumped green laser |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
-
2012
- 2012-01-05 CN CN2012200015573U patent/CN202423819U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104269728A (en) * | 2014-10-24 | 2015-01-07 | 许昌学院 | Semiconductor laser of solid-state ultraviolet laser |
| CN104409962A (en) * | 2014-11-28 | 2015-03-11 | 江苏天元激光科技有限公司 | Diode end face pumping all-solid-state ultraviolet laser |
| CN105071214A (en) * | 2015-09-22 | 2015-11-18 | 山东大学 | Method for producing deep ultraviolet laser light through visible laser direct frequency conversion and all-solid-state deep ultraviolet laser |
| CN106058630A (en) * | 2016-07-04 | 2016-10-26 | 深圳市杰普特光电股份有限公司 | End-pumped green laser |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN107946891B (en) * | 2017-12-14 | 2019-09-17 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
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| C14 | Grant of patent or utility model | ||
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| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120905 Termination date: 20140105 |