CN205944723U - Semiconductor end -pumping intracavity frequency doubling high power ultraviolet laser - Google Patents
Semiconductor end -pumping intracavity frequency doubling high power ultraviolet laser Download PDFInfo
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- CN205944723U CN205944723U CN201620941609.3U CN201620941609U CN205944723U CN 205944723 U CN205944723 U CN 205944723U CN 201620941609 U CN201620941609 U CN 201620941609U CN 205944723 U CN205944723 U CN 205944723U
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Abstract
The utility model provides a semiconductor end -pumping intracavity frequency doubling high power ultraviolet laser, includes that pumping source, four divide into collimation focus system, two sets of diode pumped coupled system, resonant cavities that two sets of bi -polars set up, the resonant cavity in be equipped with two laser crystal, reputation and transfer Q, second harmonic generation crystal and sum of fundamental frequencies crystal, the pumping source produces pumping light, the setting is at the pumping source output and form the collimation focus system by a plane -convex collimating lens, the 2nd plane -convex collimating lens and focus on the pumping optical alignment to respectively will be through the two piece laser crystal s of the pumping optical coupling after the focus of collimation focus system collimation to the resonant cavity by two sets of diode pumped coupled system. Owing to adopt two sets of bi -polar semiconductor coupled system pumping laser crystal modes, utilize intracavity frequency doubling, sum of fundamental frequencies technique, realize 1064nm fundamental frequency laser to 532nm frequency doubled light conversion, rethread fundamental frequency laser and frequency doubled light sum of fundamental frequencies obtain 355nm ultraviolet laser.
Description
Technical field
This utility model is related to quasiconductor end-pumping intracavity frequency doubling 355nm high power UV laser, belongs to laser equipment
Technical field
Background technology
The output wave length of ultraviolet laser.Material effects power is strong, high resolution, and focus point can little to several microns quantity
Level, in semiconductor applications, material retrofit, outside ultra-violet curing etc., the field such as solidification has and is widely applied.Quasiconductor
End-pumping intracavity double frequency ultraviolet laser has good beam quality.Power stability is good, and reliability is high, easy to use, small volume
Many advantages, such as.
The realization of semiconductor pumped solid Ultra-Violet Laser output：Semiconductor laser end-pumping or side pumping Nd:
YVO4、Nd:GdVO4、Nd:The laser crystals such as YLF produce fundamental frequency light, and fundamental frequency light produces two frequency doubling green lights by frequency-doubling crystal frequency multiplication,
Produce Ultra-Violet Laser output finally by sum of fundamental frequencies crystal sum of fundamental frequencies.The main technology adopting has：
End pump cavity external frequency multiplication：Spectrum physics company (SP), relevant (Coherent) is all realized green using cavity external frequency multiplication method
Light and Ultra-Violet Laser output.This method is high-power pulsed infrared laser light to be crossed a focusing system pass through non-linear crystalline substance
Body realizes frequency conversion.This method requires focus point spot size little, and therefore crystal is easier to damage, to crystal coating
Have high demands.Spectrum and relevant company all using the method that crystal is automatically moved, carry out change place after necessarily trying out the time and
Realize the long-time reliably working of crystal.This technology has very strict requirement to the brilliant control stopped, entirely more complicated.
Side pump intracavity frequency doubling：JDSU company realizes Ultra-Violet Laser output by the way of the pump intracavity frequency doubling of side, and which can
Obtain the output of high power ultraviolet, lead to electric light transformation efficiency low because the side efficiency of pump is low.
End pump intracavity frequency doubling：It is purple that the companies such as Photonics company, DPSSL company and Yuco company adopt which to realize
Laser exports.Due to there being the raising of an order of magnitude outside beam intensity ratio chamber in laser chamber, realizing same nonlinear conversion efficiency,
The method to non-thread cherish crystal plating cured require much lower.
Content of the invention
The purpose of this utility model is the defect existing for prior art, provides a kind of quasiconductor end-pumping high power
Ultraviolet laser, it realizes the output of 15W Ultra-Violet Laser.
For reaching above-mentioned purpose, this utility model adopts following technical proposals：A kind of quasiconductor end-pumping intracavity frequency doubling is high
Power UV laser device, including pumping source, four the collimation focusing systems being divided into two groups of both-ends to arrange, two groups of semiconductor pumped couplings
Assembly system, resonator cavity, described resonance intracavity is provided with two blocks of laser crystals, acousto-optic Q modulation, frequency-doubling crystal and sum of fundamental frequencies crystal, pumping
Source produces pump light, is arranged on pumping source output terminal and forms collimation by the first plano-convex collimating lens, the second plano-convex collimating lens
Focusing system is to pump light collimation focusing, and is gathered collimated focusing system collimation respectively by two groups of semiconductor pumped coupled systems
To two blocks of laser crystals of resonator cavity, described two pieces of thermal effect compensations with focal length of resonance intracavity are recessed for defocused coupling pump light
Convex lens compensates laser crystal heat effect, and acousto-optic Q modulation modulation 1064nm fundamental frequency light strengthens fundamental frequency optical power density, intracavity vibration
1064nm fundamental frequency light produces 532nm frequency doubled light by frequency-doubling crystal, and 1064nm fundamental frequency light and the 532nm frequency doubled light producing pass through to close
Frequency crystal sum of fundamental frequencies produces 355nm laser instrument, and 355nm laser is defeated by cut at Brewster angle sum of fundamental frequencies crystal mode separation resonator cavity
Go out.
Improve as a kind of：Described resonance intracavity also includes two pieces of thermal effect compensation concave and convex lenses with focal length, described
Two pieces of thermal effect compensation concave and convex lenses with focal length are in order to compensate laser crystal heat effect.
Improve as a kind of：The described collimation focusing system being made up of the first plano-convex collimating lens and the second plano-convex collimating lens
The enlargement ratio of system is 1:3.
Improve as a kind of：Two blocks of laser crystals of described resonance intracavity are Nd:YVO4、Nd:GdVO4、Nd:YLF.
Improve as a kind of：Frequency-doubling crystal is I type-Ⅱphase matching mode LBO, and crystalline size is 3x3x (5-12) mm3, close
Frequency crystal is II type-Ⅱphase matching mode LBO, and crystalline size is 3x3x (15-25) mm3.
This utility model adopts two groups of both-end semiconductor coupling system pumped laser crvstal modes, using intracavity frequency doubling, conjunction
Frequency technology, realizes 1064nm fundamental frequency light and changes to 532nm frequency doubled light, then it is purple to obtain 355nm by fundamental frequency light and frequency doubled light sum of fundamental frequencies
Outer laser.By the design to resonator cavity, at laser crystal, tool, with larger fundamental mode volume, has relatively at nonlinear crystal simultaneously
Little fundamental mode spot, significantly improves nonlinear conversion efficiency.Using coupling pump light system it is ensured that pump light at laser crystal
Reach good spatial model with the basic mode oscillating laser at laser crystal to mate.
In order that the purpose of this utility model, technical scheme and advantage are clearer, below in conjunction with accompanying drawing to this practicality
New it is described in further detail.
Brief description
Fig. 1 is a kind of principle schematic of this utility model quasiconductor end-pumping high power UV laser.
Specific embodiment
As shown in figure 1, constituting two groups of both-end pumping mode pumps using two groups of four pumping source semiconductor lasers 1,2,3,4
808nm, 880nm, 888nm pump light of Pu laser crystal, wherein semiconductor laser 1 output is through by two plano-convex collimations thoroughly
The collimation focusing system that mirror 5,6 is constituted is coupled to 808nm, 880nm, 888nm of laser crystal 22 and semiconductor laser 2 output
Pump light forms one group of both-end through being coupled to laser crystal 22 by the focussed collimated system that two plano-convex collimating lens 7,8 are constituted
Pumping.808nm, 880nm, 888nm pump light of wherein semiconductor laser 3 output passes through by two plano-convex collimating lens 9,10
The optics coupling colimated light system constituting is coupled to laser crystal 23,808nm, 880nm, 888nm pump with semiconductor laser 4 output
Pu light forms another group pair through being coupled to laser crystal 22 by the focussed collimated system that two plano-convex collimating lens 11,12 are constituted
End-pumping.The thermal effect compensation concave and convex lenses 19,20 that resonator cavity is inserted into two pieces of certain focal lengths compensate laser crystal heat effect.Produce
1064nm fundamental frequency light through being vibrated by the resonator cavity that six plane mirrors 13,14,15,16,17,18 are constituted, and by acousto-optic
Q-switch 21 is modulated, and the 1064nm fundamental frequency light of modulation comes and goes and carries out 1064nm fundamental frequency light through frequency-doubling crystal 24 twice and arrive
The conversion of 532nm green glow, the 1064nm fundamental frequency light of undone frequency-doubled conversion and 532nm frequency doubled light are closed through sum of fundamental frequencies crystal 25
Frequently, the 355nm Ultra-Violet Laser obtaining exports from the one side of sum of fundamental frequencies crystal 25 cut at Brewster angle.
During specific design application, the quasiconductor end-pumping intracavity frequency doubling high power UV laser of output 15W, mainly
By four 40W semiconductor lasers 1,2,3,4 with tail optical fiber, constitute plano-convex collimating lens 5 in coupled system, 6,7,8,9,
10th, 11,12, plane mirror 13,14,15,16,17,18, the thermal effect compensation concave and convex lenses 19,20 of two pieces of certain focal lengths, acoustics Q opens
Pass 21, laser crystal 22,23, frequency-doubling crystal 24, sum of fundamental frequencies crystal 25 is constituted.Semiconductor laser 1,2,3,4 is all using output work
Rate is 808nm, 880nm, 888nm semiconductor laser of 40W, and its tail optical fiber core diameter is 400 microns, numerical aperture NA=
0.22. the plano-convex collimating lens 5,6 in coupled system, plano-convex collimating lens 7,8, plano-convex collimating lens 9,10, plano-convex collimation is thoroughly
Mirror 11,12 expands ratio and is 1：2.Coupled system lens all plate 808nm, 880nm, 888nm anti-reflection film.Laser crystal 22,23
It is Nd:YVO4, its a size of 3x3x (12-30) mm3, its doping content is 0.25%-1%.Or be Nd:GdVO4、Nd:YLF
Deng other laser crystals.Frequency-doubling crystal 24 is I class matching way LBO, its a size of 3x3x (5-12) mm3.Sum of fundamental frequencies crystal 25 is
II class matching way LBO, its a size of 3x3x (15-25) mm3, a face cut at Brewster angle.Frequency-doubling crystal and sum of fundamental frequencies crystal
All carry out temperature control with TEC, temperature-controlled precision is positive and negative 0.02 degree.
The design to high power pump resonator cavity for the present embodiment：Under high power pump, laser crystal has very strong heat penetration
Mirror effect, in each 40W (808nm, the 880nm, 888nm) pumping of both-end semiconductor laser, the thermal lenss of crystal are burnt for laser crystal
Away from F=110-400mm；The thermal effect compensation concave and convex lenses 19,20 that intracavity inserts two pieces of certain focal lengths compensate laser crystal heat effect,
Make fundamental frequency light basic mode at laser crystal spot size diameter in 1mm, at nonlinear crystal, spot size diameter exists
0.25mm about.Using semiconductor laser focussed collimated system it is ensured that oscillating laser at pumping and crystal at laser crystal
Reach good pattern match, improve the conversion efficiency of fundamental frequency light.At nonlinear crystal less hot spot improve non-linear
Conversion efficiency.
The present embodiment is analyzed to polarization mode in frequency conversion：A-cut laser crystal Nd:YVO4The 1064nm base sending
Frequency light 26 is P polarization, and it is S-polarization light that the fundamental frequency light of P polarization produces 532nm frequency multiplication 28 light through I class LBO frequency-doubling crystal, P polarization
Fundamental frequency light and 532nm S-polarization frequency doubled light mate sum of fundamental frequencies crystal LBO through II class, produce the 355nm Ultra-Violet Laser of P polarization
27.355nm Ultra-Violet Laser 27 and 1064nm basic frequency laser 26 have identical polarization, and in sum of fundamental frequencies crystal LBO, plated film is not realized entirely
Saturating cut at Brewster angle difference only has 0.65 degree about.Therefore fundamental frequency light cut at Brewster angle is carried out to sum of fundamental frequencies crystal,
Obtain the output of ultraviolet 355nm laser.
The present embodiment selects to the plated film of each hysteroscope and crystal：Flat mirror 13 is plated 1064 fundamental frequency light and is all-trans film, flat mirror 14,15,
16th, 17 one side plating pump light 808nm, 880nm, 888nm anti-reflection film, simultaneously plating pump light 808nm, 880nm, 888nm anti-reflection with
Fundamental frequency light 1064nm is all-trans film, and flat mirror 18 plating fundamental frequency light 1064nm and frequency doubled light 532nm are all-trans film, thermal effect compensation concave and convex lenses
19th, 20 plating fundamental frequency light 1064nm anti-reflection film, laser crystal 22,23 plates pump light 808nm, 880nm, 888nm and 1064nm fundamental frequency
Light anti-reflection film.Frequency-doubling crystal two sides plating fundamental frequency light 1064nm and frequency doubled light 532nm anti-reflection film, fundamental frequency is plated in that face of sum of fundamental frequencies crystrallographic plane
Light 1064nm and frequency doubled light 532nm anti-reflection film.
Although this utility model is open as above with specific embodiment, but it is not limited to this utility model, appoints
What those skilled in the art, in the case of without departing from spirit and scope of the present utility model, still can make a little change with
Retouching, protection domain therefore of the present utility model should be defined depending on the defined person of the scope of appending claims.
Claims (9)
1. a kind of quasiconductor end-pumping intracavity frequency doubling high power UV laser it is characterised in that：Including pumping source, four be divided into
The collimation focusing system of two groups of both-end settings, two groups of semiconductor pumped coupled systems, resonator cavitys, described resonance intracavity is provided with two
Block laser crystal, acousto-optic Q modulation, frequency-doubling crystal and sum of fundamental frequencies crystal, pumping source produce pump light, be arranged on pumping source output terminal and by
First plano-convex collimating lens, the second plano-convex collimating lens composition collimation focusing system to pump light collimation focusing, and by two and Ban
Conductor pumping coupling system is respectively by two pieces of laser of the coupling pump light after collimated focusing system collimation focusing to resonator cavity
Crystal, the described thermal effect compensation concave and convex lenses with focal length for two pieces of the resonance intracavity compensate laser crystal heat effect, and acousto-optic Q modulation is modulated
1064nm fundamental frequency light strengthens fundamental frequency optical power density, and the 1064nm fundamental frequency light of intracavity vibration produces 532nm times by frequency-doubling crystal
Frequency light, 1064nm fundamental frequency light and the 532nm frequency doubled light producing produce 355nm laser instrument, 355nm laser by sum of fundamental frequencies crystal sum of fundamental frequencies
Exported by cut at Brewster angle sum of fundamental frequencies crystal mode separation resonator cavity.
2. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 1 it is characterised in that：Described
Resonance intracavity also include two pieces of thermal effect compensation concave and convex lenses with focal length, two pieces of described thermal effect compensations with focal length are concavo-convex
Mirror is in order to compensate laser crystal heat effect.
3. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 1 and 2 it is characterised in that：
The enlargement ratio of the described collimation focusing system being made up of the first plano-convex collimating lens and the second plano-convex collimating lens is 1:3.
4. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 1 and 2 it is characterised in that：
Two blocks of laser crystals of described resonance intracavity are Nd:YVO4、Nd:GdVO4、Nd:YLF.
5. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 3 it is characterised in that：Described
Resonance intracavity two blocks of laser crystals be Nd:YVO4、Nd:GdVO4、Nd:YLF.
6. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 1 and 2 it is characterised in that：
Frequency-doubling crystal is I type-Ⅱphase matching mode LBO, and crystalline size is 3x3x (5-12) mm3, sum of fundamental frequencies crystal is II type-Ⅱphase matching side
Formula LBO, crystalline size is 3x3x (15-25) mm3.
7. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 3 it is characterised in that：Frequency multiplication
Crystal is I type-Ⅱphase matching mode LBO, and crystalline size is 3x3x (5-12) mm3, sum of fundamental frequencies crystal is II type-Ⅱphase matching mode
LBO, crystalline size is 3x3x (15-25) mm3.
8. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 4 it is characterised in that：Frequency multiplication
Crystal is I type-Ⅱphase matching mode LBO, and crystalline size is 3x3x (5-12) mm3, sum of fundamental frequencies crystal is II type-Ⅱphase matching mode
LBO, crystalline size is 3x3x (15-25) mm3.
9. quasiconductor end-pumping intracavity frequency doubling high power UV laser according to claim 5 it is characterised in that：Frequency multiplication
Crystal is I type-Ⅱphase matching mode LBO, and crystalline size is 3x3x (5-12) mm3, sum of fundamental frequencies crystal is II type-Ⅱphase matching mode
LBO, crystalline size is 3x3x (15-25) mm3.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106129801A (en) * | 2016-08-24 | 2016-11-16 | 郑淑琴 | Quasiconductor end-pumping intracavity frequency doubling high power UV laser |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106129801A (en) * | 2016-08-24 | 2016-11-16 | 郑淑琴 | Quasiconductor end-pumping intracavity frequency doubling high power UV laser |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20170417 Address after: Dasan Ouhai District 325000 Zhejiang province Wenzhou Higher Education Park Oujiang College Wenzhou University Patentee after: WENZHOU UNIVERSITY OUJIANG College Address before: Wenzhou University Oujiang College of Wenzhou city in Zhejiang province 325000 Patentee before: Zheng Shuqin |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170208 Termination date: 20210824 |