CN102163793A - Multiple extra-cavity frequency conversion ultraviolet laser - Google Patents
Multiple extra-cavity frequency conversion ultraviolet laser Download PDFInfo
- Publication number
- CN102163793A CN102163793A CN 201110045174 CN201110045174A CN102163793A CN 102163793 A CN102163793 A CN 102163793A CN 201110045174 CN201110045174 CN 201110045174 CN 201110045174 A CN201110045174 A CN 201110045174A CN 102163793 A CN102163793 A CN 102163793A
- Authority
- CN
- China
- Prior art keywords
- harmonic
- laser
- crystal
- lasers
- fundamental wave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Abstract
The invention relates to a multiple extra-cavity frequency conversion ultraviolet laser, which belongs to a laser in the technical field of lasers and comprises a pumping source, an energy transmitting optical fiber, a coupling system, a fundamental wave grain dielectric crystal, a resonant cavity reflecting mirror, a focus lens, a reflecting focus lens and a third harmonic non-linear crystal; pumping is performed on the fundamental wave grain dielectric crystal by adopting a semiconductor pumping source; fundamental wave light rays of stimulated radiation are formed by the fundamental wave grain dielectric crystal under the action of a selecting mode of a resonant cavity for output; pulse lasers are formed under the action of a modulator for output; fundamental wave lasers are focused in a secondary harmonic crystal by utilizing the focus lens to generate frequency doubled lasers; the frequency doubled lasers and the remaining fundamental wave lasers are focused on a third harmonic crystal to perform sum frequency and generate third harmonic lasers; and the remaining fundamental wave lasers and the secondary harmonic lasers are re-focused on a second sum frequency crystal to perform sum frequency and re-generate the third harmonic lasers for output. By twice frequency conversion, the conversion rate of the fundamental wave lasers into the third harmonic lasers is improved.
Description
[technical field]
The present invention relates to the ultraviolet laser of frequency translation outside a kind of repeatedly chamber, belong to the related a kind of laser of laser technology field.
[technical background]
The LD pumping all-solid-state laser has obtained significant progress since the 1980s, ultraviolet laser is exactly the focus of people's research because of its application at aspects such as fluoroscopic examination, retrofit, photoetching all the time.Be carved into mark and printing from low-light, the application of ultraviolet laser is the fastest part in present industrial lasers market growth, ultraviolet light rapidoprint process is called the photetching effect, be that the heat-affected zone is very little because the high-energy photons of ultraviolet light can directly be destroyed the chemical bond of material is " cold " processing procedure; By contrast, the heat that visible light and infrared laser utilization focus on working position comes molten material, and the material around heat can have influence on through conduction produces the heat-affected zone.Two advantages of good focusing performance and cold treatment are in the same place, make ultraviolet laser can process extremely small parts, and most of materials can both absorb ultraviolet light effectively, thereby ultraviolet laser has higher flexibility and wider application scenario, can be used for processing infrared and visible light laser processing not material.The mode that realizes Ultra-Violet Laser is a lot of as gas laser, all-solid state laser etc., but gas laser exist system numerous and jumbled, need shortcomings such as periodic maintenance, and replaced by the all-solid-state ultraviolet laser of LD pumping gradually, all-solid-state ultraviolet laser becomes the important directions of laser research.
All-solid-state ultraviolet laser is divided into the ultraviolet laser of frequency translation in the chamber and the ultraviolet laser of inner chamber frequency translation, the ultraviolet laser efficient of inner chamber frequency translation is higher, but there are a lot of shortcomings, as poor stability, pulse stability is bad, beam quality is bad or the like, frequency translation realizes outside the chamber so the ultraviolet laser of commercialization in the market all adopts, as Coherent, the big laser company in the worlds such as Newport all adopts the exocoel frequency transform techniques, but because optical power density is low outside the chamber, the first-harmonic of the outer frequency translation of ordinary circumstance cavity of resorption is all lower to the transfer ratio of triple-frequency harmonics, less than 40%.
[summary of the invention]
The objective of the invention is to improve the transfer ratio of the first-harmonic of frequency translation outside the chamber, propose the repeatedly new method of frequency translation of a kind of exocoel to triple-frequency harmonics.
Realize that technical scheme of the present invention is to solve like this, semiconductor pumping module (1) output pump light, be transferred in the coupled system (3) (4) through energy-transmission optic fibre (2), coupled system (3) (4) is a planoconvex spotlight, be coated with 808 or the anti-reflection film of 880nm, collimation focussing force through (3) and (4), pump light is focused in the first-harmonic gain media crystal (7), the two-sided anti-reflection film that is coated with 808nm or 880nm and 1064nm of first-harmonic gain media crystal (7), first-harmonic gain media crystal (7) begins to form spontaneous radiation after encouraging by pump light, constitute the modeling effect of the laserresonator of first-harmonic by (5) (6) and (9), wherein (5) are coated with the anti-reflection film of 1064nm high-reflecting film and 808nm or 880nm, (6) be coated with the high-reflecting film of 1064nm, (9) be coated with the part transmission film of 1064nm for outgoing mirror, the final fundamental wave of laser that forms is exported, can form the fundamental wave of laser output of pulse by modulator (8), (10) be focus lamp, be coated with the 1064nm high transmittance film, the laser of first-harmonic output focuses on first-harmonic in the frequency-doubling crystal (11) through focus lamp (10), the output of formation second harmonic laser, (12) be the reflect focalization mirror, be coated with the double-colored high-reflecting film of 1064nm and 532nm, second harmonic laser and the remaining fundamental wave of laser focus lamp (12) that is reflected focuses on and forms third harmonic laser output in the THIRD-HARMONIC GENERATION crystal (13), remaining fundamental wave of laser and second harmonic laser are once more by reflect focalization mirror (14), be focused once more and form third harmonic laser output in second THIRD-HARMONIC GENERATION crystal (15) once more, wherein focus lamp (14) is coated with 1064nm, the highly reflecting films of 532nm and 355nm are because repeatedly frequency translation has improved the transfer ratio of fundamental wave of laser to third harmonic laser greatly.
[description of drawings]
Fig. 1 is a schematic diagram of the present invention, and Fig. 2 is that spot radius distributes in the chamber, and Fig. 3 is the situation of 1064nm laser after through focusing
[embodiment]
Specific embodiment now is described with reference to the accompanying drawings:
Semiconductor pumping module (1) output pump light, through energy-transmission optic fibre (2), energy-transmission optic fibre (2) is 400 microns of core diameters, the energy-transmission optic fibre of numerical aperture 0.22, through energy-transmission optic fibre (2), pump light is transferred in the coupled system (3) (4), coupled system (3) (4) is a planoconvex spotlight, constitute 1: 1.5 imaging system by (3) (4), and (3) and (4) are two-sided is coated with 808 or the anti-reflection film of 880nm, collimation focussing force through (3) and (4), pump light is focused in the first-harmonic gain media crystal (7), (7) be the Nd:YV04 crystal, doping content 0.3%, specification is 3 * 3 * 7mm, the two-sided anti-reflection film that is coated with 808nm or 880nm and 1064nm of first-harmonic gain media crystal (7), first-harmonic gain media crystal (7) begins to form spontaneous radiation after encouraging by pump light, constitute the modeling effect of the laserresonator of first-harmonic by (5) (6) and (9), wherein (5) are coated with the anti-reflection film of 1064nm high-reflecting film and 808nm or 880nm, (6) be coated with the high-reflecting film of 1064nm, (9) be coated with the part transmission film of 1064nm for outgoing mirror, the left side of centre distance first-harmonic gain media crystal (7) (5) is 25mm, the centre distance of centre distance (5) (6) is 100mm, the right side of first-harmonic gain media crystal (7) is 100mm apart from the distance of outgoing mirror (9), (5) (6) (9) all are level crossing, (5) (6) (9) constitute symmetric cavity like this, increased the thermal stability of resonant cavity, the spot diameter of each position size is shown in figure (2) in its chamber, under the effect of the feedback of (5) (6) (9) and modeling, the final fundamental wave of laser that forms is exported, can form the fundamental wave of laser output of pulse by modulator (8), (10) be 30mm for the focus lamp focal length, distance apart from outgoing mirror (9) is 150mm, be coated with the 1064nm high transmittance film, the laser of first-harmonic output focuses on first-harmonic in the frequency-doubling crystal (11) through focus lamp (10), the output of formation second harmonic laser, (12) be the reflect focalization mirror, its radius of curvature is 100mm, distance apart from focus lamp (10) is 150mm, be coated with the double-colored high-reflecting film of 1064nm and 532nm, second harmonic laser and the remaining fundamental wave of laser focus lamp (12) that is reflected focuses in the THIRD-HARMONIC GENERATION crystal and to form third harmonic laser output, the radius of curvature of reflect focalization mirror (14) is 60mm, distance apart from focus lamp (12) is 150mm, remaining fundamental wave of laser and second harmonic laser form third harmonic laser output once more by being focused once more in second THIRD-HARMONIC GENERATION crystal, wherein focus lamp (14) is coated with 1064nm, the highly reflecting films of 532nm and 355nm, nonlinear frequency transformation crystal (11) is a lbo crystal, specification is 2 * 2 * 20mm, the anti-reflection film of two-sided plating 1064nm and 532nm, its left side is 26mm apart from the centre distance of focus lamp (10), nonlinear frequency transformation crystal (13) is ultraviolet and frequency lbo crystal, two and the plating 1064nm, the anti-reflection film of 532nm and 355nm, specification is 2 * 2 * 20mm, its right side is 79mm apart from the centre distance of reflect focalization mirror (12), nonlinear frequency transformation crystal (15) is secondary and frequency ultraviolet lbo crystal, two-sided plating 1064nm, the anti-reflection film of 532nm and 355nm, specification is 2 * 2 * 20mm, its left side is 50mm apart from the distance of reflect focalization mirror, nonlinear frequency transformation crystal (11) (13) (15) all adopts the noncritical phase matching mode, spot diameter on every nonlinear frequency transformation crystal is shown in figure (3), because repeatedly frequency translation has improved the transfer ratio of fundamental wave of laser to third harmonic laser greatly.
Claims (6)
1. ultraviolet laser of frequency translation outside the chamber repeatedly, it is characterized in that: semiconductor pumping module (1) output pump light, be transferred in the coupled system (3) (4) through energy-transmission optic fibre (2), collimation focussing force through (3) and (4), pump light is focused in the first-harmonic gain media crystal (7), first-harmonic gain media crystal (7) begins to form spontaneous radiation, constitute the modeling effect of the laserresonator of first-harmonic by (5) (6) and (9), the final fundamental wave of laser that forms is exported, can form the fundamental wave of laser output of pulse by modulator (8), the laser of first-harmonic output focuses on first-harmonic in the frequency-doubling crystal (11) through focus lamp (10), the output of formation second harmonic laser, second harmonic laser and the remaining fundamental wave of laser focus lamp (12) that is reflected focuses in the THIRD-HARMONIC GENERATION crystal and to form third harmonic laser output, and remaining fundamental wave of laser and second harmonic laser are focused once more by reflect focalization mirror (14) once more and form third harmonic laser in second THIRD-HARMONIC GENERATION crystal (15) once more and export.
2. the ultraviolet laser of frequency translation is characterized in that outside the repeatedly chamber according to claim 1: the centre wavelength of semiconductor pumping module (1) is 808nm, 879nm, 880nm, 885nm, 888nm, 914nm or 912nm.
3. the ultraviolet laser of frequency translation is characterized in that outside the repeatedly chamber according to claim 1: gain medium crystal (7) is Nd:YVO
4, Nd:GdVO
4, Nd:YAG, Nd:FLY, NdiLuVO
4, Y
b: Y
AG
4. the ultraviolet laser of frequency translation is characterized in that outside the repeatedly chamber according to claim 1: it can be LBO, KTP, BBO, BiBO, CLBO that second harmonic produces crystal (11), and matching way can adopt critical phase matched or noncritical phase matching.
5. the ultraviolet laser of frequency translation is characterized in that outside the repeatedly chamber according to claim 1: focus lamp (12) (14) is reflective focus lamp or transmission-type focus lamp.
6. the ultraviolet laser of frequency translation is characterized in that outside the repeatedly chamber according to claim 1: modulator (8) is that acousto-optic Q opens the light, and also can be that electric light Q opens the light or saturated absorption formula passive Q-switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110045174 CN102163793A (en) | 2011-02-25 | 2011-02-25 | Multiple extra-cavity frequency conversion ultraviolet laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110045174 CN102163793A (en) | 2011-02-25 | 2011-02-25 | Multiple extra-cavity frequency conversion ultraviolet laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102163793A true CN102163793A (en) | 2011-08-24 |
Family
ID=44464851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201110045174 Pending CN102163793A (en) | 2011-02-25 | 2011-02-25 | Multiple extra-cavity frequency conversion ultraviolet laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102163793A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510002A (en) * | 2011-12-29 | 2012-06-20 | 苏州德龙激光有限公司 | Semiconductor diode single-end pumped 355nm ultraviolet laser |
| CN103427327A (en) * | 2012-05-15 | 2013-12-04 | 天津梅曼激光技术有限公司 | Broadband Ti:sapphire tunable Raman laser |
| CN104242041A (en) * | 2014-09-29 | 2014-12-24 | 广州安特激光技术有限公司 | 1065-nanometer-wavelength and 355-nanometer-wavelength free switching and outputting laser based on polarization compensator |
| CN105379032A (en) * | 2013-06-11 | 2016-03-02 | 科磊股份有限公司 | CW DUV laser with improved stability |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN108011284A (en) * | 2017-11-10 | 2018-05-08 | 广东工业大学 | A kind of method and system of triple-harmonic filling |
| US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001014096A1 (en) * | 1999-08-20 | 2001-03-01 | Electro Scientific Industries, Inc. | Multiple ultraviolet beam solid-state laser systems and methods |
| CN1635670A (en) * | 2004-12-31 | 2005-07-06 | 西北大学 | Laser diode pumping full-solid ultraviolet pulse laser |
| CN101132105A (en) * | 2007-09-07 | 2008-02-27 | 北京工业大学 | Continuously-tuning full solid state ultraviolet laser |
| CN101202405A (en) * | 2007-12-05 | 2008-06-18 | 山东大学 | Method for obtaining 192 nm ultraviolet laser by 1342 nm laser 7 frequency multiplication |
| CN101232148A (en) * | 2008-02-22 | 2008-07-30 | 苏州德龙激光有限公司 | Design method of semiconductor diode both-end pumping high power UV laser |
-
2011
- 2011-02-25 CN CN 201110045174 patent/CN102163793A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001014096A1 (en) * | 1999-08-20 | 2001-03-01 | Electro Scientific Industries, Inc. | Multiple ultraviolet beam solid-state laser systems and methods |
| CN1635670A (en) * | 2004-12-31 | 2005-07-06 | 西北大学 | Laser diode pumping full-solid ultraviolet pulse laser |
| CN101132105A (en) * | 2007-09-07 | 2008-02-27 | 北京工业大学 | Continuously-tuning full solid state ultraviolet laser |
| CN101202405A (en) * | 2007-12-05 | 2008-06-18 | 山东大学 | Method for obtaining 192 nm ultraviolet laser by 1342 nm laser 7 frequency multiplication |
| CN101232148A (en) * | 2008-02-22 | 2008-07-30 | 苏州德龙激光有限公司 | Design method of semiconductor diode both-end pumping high power UV laser |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102510002A (en) * | 2011-12-29 | 2012-06-20 | 苏州德龙激光有限公司 | Semiconductor diode single-end pumped 355nm ultraviolet laser |
| CN103427327A (en) * | 2012-05-15 | 2013-12-04 | 天津梅曼激光技术有限公司 | Broadband Ti:sapphire tunable Raman laser |
| CN105379032A (en) * | 2013-06-11 | 2016-03-02 | 科磊股份有限公司 | CW DUV laser with improved stability |
| CN105379032B (en) * | 2013-06-11 | 2022-03-15 | 科磊股份有限公司 | Deep ultraviolet DUV continuous wave CW laser and method for generating DUV CW laser radiation |
| CN104242041A (en) * | 2014-09-29 | 2014-12-24 | 广州安特激光技术有限公司 | 1065-nanometer-wavelength and 355-nanometer-wavelength free switching and outputting laser based on polarization compensator |
| CN104242041B (en) * | 2014-09-29 | 2017-10-20 | 广州安特激光技术有限公司 | A kind of 1064nm based on polarization compensator and 355nm wavelength free switching output lasers |
| US10175555B2 (en) | 2017-01-03 | 2019-01-08 | KLA—Tencor Corporation | 183 nm CW laser and inspection system |
| US10429719B2 (en) | 2017-01-03 | 2019-10-01 | Kla-Tencor Corporation | 183 nm CW laser and inspection system |
| CN108011284A (en) * | 2017-11-10 | 2018-05-08 | 广东工业大学 | A kind of method and system of triple-harmonic filling |
| CN108011284B (en) * | 2017-11-10 | 2023-07-25 | 广东工业大学 | Third harmonic conversion method and system |
| CN107946891A (en) * | 2017-12-14 | 2018-04-20 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
| CN107946891B (en) * | 2017-12-14 | 2019-09-17 | 湖北工业大学 | A kind of high-power ultraviolet solid-state laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102163793A (en) | Multiple extra-cavity frequency conversion ultraviolet laser | |
| CN101777724B (en) | End-pumped dual-wavelength coaxial switching output Q-switched base-frequency and double-frequency laser | |
| CN101232148A (en) | Design method of semiconductor diode both-end pumping high power UV laser | |
| CN103427325A (en) | Internal cavity and external cavity mixing type non-linear frequency conversion ultraviolet laser | |
| CN101777725A (en) | Full solid-state ultraviolet laser with third harmonic in diode pumping cavity | |
| CN102088158B (en) | Method and device for obtaining high-power ultraviolet laser light | |
| CN103996968A (en) | Self Raman yellow light laser of composite cavity structure | |
| CN102904155A (en) | Full solid state picosecond laser regenerative amplifier | |
| CN101814695B (en) | Directly-pumping self-stimulated Raman scattering human eye safe waveband laser | |
| CN101807774B (en) | Self-stimulated Raman scattering laser of In-Band pump | |
| CN106129801A (en) | Quasiconductor end-pumping intracavity frequency doubling high power UV laser | |
| CN101814692A (en) | Medicinal all-solid-state yellow laser | |
| CN101436752A (en) | End-face pump green light laser capable of regulating Q cavity external frequency multiplication actively | |
| CN102157892A (en) | High-power ultraviolet laser | |
| Li et al. | High efficiency generation of 355 nm radiation by extra-cavity frequency conversion | |
| CN103022870A (en) | Slat structure based high-power 355nm ultraviolet laser device | |
| CN104682182A (en) | Diode end-pumped all-solid-state laser | |
| CN100438232C (en) | Quasi-continuous high power red, green double-wavelength laser with LD side pumping | |
| CN102244345A (en) | Tunable titanium jewelry laser of 588nm yellow light pump | |
| CN212033421U (en) | Frequency doubling pulse laser | |
| Creeden et al. | Pulsed Tm-doped fiber lasers for mid-IR frequency conversion | |
| CN207183790U (en) | A kind of and intracavity frequency doubling laser of frequency | |
| CN201682170U (en) | Medical all-solid yellow laser | |
| CN205944723U (en) | Semiconductor end -pumping intracavity frequency doubling high power ultraviolet laser | |
| CN220934588U (en) | 295Nm ultraviolet solid laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110824 |