CN102510002A - Semiconductor diode single-end pumped 355nm ultraviolet laser - Google Patents
Semiconductor diode single-end pumped 355nm ultraviolet laser Download PDFInfo
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- CN102510002A CN102510002A CN2011104502107A CN201110450210A CN102510002A CN 102510002 A CN102510002 A CN 102510002A CN 2011104502107 A CN2011104502107 A CN 2011104502107A CN 201110450210 A CN201110450210 A CN 201110450210A CN 102510002 A CN102510002 A CN 102510002A
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Abstract
The invention relates to a semiconductor diode single-end pumped 355nm ultraviolet laser. A semiconductor diode pump source is an 879.5nm-waveband semiconductor diode pump source with the output power of 40W. A first aspheric lens and a second aspheric lens are sequentially arranged at the output end of the semiconductor diode pump source. A first flat mirror is arranged at the output end of the second aspheric lens. A laser crystal is arranged at the output end of the first flat mirror, and is engaged with a lens. A Q switch is arranged at the output end of the lens. A second flat mirror is arranged at the output end of the Q switch, and is engaged with a frequency tripling crystal which is sequentially engaged with a frequency doubling crystal and a third flat mirror. A highly-doped ultralong Nd:YVO4 crystal is pumped by an 879.5nm-waveband diode to output 355nm ultraviolet laser under the high output power of 5W, so that the fundamental frequency light output power of the laser is effectively improved.
Description
Technical field
The present invention relates to the single-ended pumping 355nm of a kind of semiconductor diode ultraviolet laser, belong to the laser equipment technical field.
Background technology
The output wave length of ultraviolet laser, material effects power is strong, and resolution is high, and focus point can be little of several micron number magnitudes, had in fields such as semiconductor applications, photovoltaic, material retrofit, ultra-violet curings widely and used.The semiconductor diode pump ultraviolet laser has good beam quality, power stability is good, reliability is high, easy to use, plurality of advantages such as volume is little.At present, the whole world increases the increasing demand of semiconductor diode pump ultraviolet laser, and application constantly enlarges.External how tame laser company (Coherent, Spectra-physics, JDSU) can provide watt level above semiconductor diode pump ultraviolet laser, and domestic because of the ultraviolet laser design, difficult point problems such as technology, the stability of laser are difficult to guarantee.
The realization of semiconductor diode pump Ultra-Violet Laser output is through the fundamental frequency light that sends from laser crystals such as Nd:YVO4 or Nd:YAG is carried out secondary frequency multiplication, then obtaining with frequency through fundamental frequency light and secondary frequency multiplication light.Usually the pump light wavelength 808nm that adopts.Because laser crystal (Nd:YVO4) has the intense absorption peak at the 808nm place; So adopt 808nm LD to come the pumping laser crystal usually, obtaining higher light light conversion efficiency (808nm is to 1064nm light light conversion efficiency 40%-60%), but because the influence of quantum loss effect; When pump power strengthens; Crystal end-face produces very large heat, has a strong impact on the beam quality of output laser, even is easy to produce crystal cleavage or fracture.In order to obtain the basic mode running, the single-ended pumping laser output power of 808nm LD is transformed into Ultra-Violet Laser power and will be lower than 3W less than 10W usually.The present invention adopts 879.5nm wave band LD pumping Nd:YVO4 crystal, and particle directly is energized into upper laser level from ground state, has effectively reduced the quantum loss.Laser crystal can bear very high pump power, thereby improves the fundamental frequency optical output power, and output laser obtains the basic mode running more easily.Though the light light conversion efficiency is little than 808nm LD pumping meeting, can improve through increasing measures such as crystal doping concentration and length.The final Ultra-Violet Laser power output that obtains is greater than 5W.
At present the coupled system that adopts of semiconductor end-pumped high-power laser is usually less than 1:4, focuses on intracrystalline hot spot generally between 0.8-1.2mm, and the tail optical fiber core diameter is generally 200-600um.The used laser crystal doping content of semiconductor end-pumped high-power laser is generally 0.2%-0.4%, and crystal length is generally 5mm-20mm.
Summary of the invention
The objective of the invention is to overcome the deficiency that prior art exists, the single-ended pumping 355nm of a kind of semiconductor diode is provided ultraviolet laser.
The object of the invention is realized through following technical scheme:
The single-ended pumping 355nm of semiconductor diode ultraviolet laser; Characteristics are: comprise semiconductor diode pump source and laser crystal, the semiconductor diode pump source is the 879.5nm wave band semiconductor diode pump of power output 40W, and the output in semiconductor diode pump source is furnished with first non-spherical lens and second non-spherical lens successively; First non-spherical lens and second non-spherical lens constitute the aspherics coupled system; The output of second non-spherical lens is arranged first level crossing, and the output of first level crossing is arranged laser crystal, and laser crystal is connected lens; The output of lens is arranged Q switching; The output of Q switching is arranged second level crossing, and second level crossing is connected the frequency tripling crystal, and the frequency tripling crystal is connected two frequency-doubling crystals and the 3rd level crossing successively; Semiconductor diode pump source output 879.5nm pump light is coupled in the laser crystal through the aspherics coupled system and first level crossing of being made up of first non-spherical lens and second non-spherical lens; The 1064nm laser that produces is modulated through vibration in the resonant cavity that is made up of first level crossing, second level crossing and the 3rd level crossing and by Q switching; Twice of the 1064nm fundamental frequency light of modulation converts 1064nm fundamental frequency light into the 532nm frequency doubled light through two frequency-doubling crystals; The residue 1064nm fundamental frequency light of secondary frequency multiplication conversion and 532nm frequency doubled light do not carry out and frequency through the frequency tripling crystal, and the 355nm Ultra-Violet Laser that obtains is from the one side output of frequency tripling crystal Brewster's angle cutting.
Further, the single-ended pumping 355nm of above-mentioned semiconductor diode ultraviolet laser, wherein, the enlargement ratio of the aspherics coupled system that said first non-spherical lens and second non-spherical lens are formed is 1:8.
Further, the single-ended pumping 355nm of above-mentioned semiconductor diode ultraviolet laser, wherein, said laser crystal is Nd:YVO4, its crystalline size is 3 * 3 * 30mm
3, crystal doping concentration is 0.55%.
Again further, the single-ended pumping 355nm of above-mentioned semiconductor diode ultraviolet laser, wherein, said frequency tripling crystal is II class phase matched mode LBO, its crystalline size is 3 * 3 * 25mm
3
Again further, the single-ended pumping 355nm of above-mentioned semiconductor diode ultraviolet laser, wherein; Be inserted with the monolithic convex lens in the resonant cavity that said first level crossing, second level crossing and the 3rd level crossing constitute; The compensated crystal thermal effect improves power output, improves beam quality.
Substantive distinguishing features and obvious improvement that technical scheme of the present invention is outstanding are mainly reflected in:
The present invention adopts 879.5nm wave band diode pumping highly doped, and overlength Nd:YVO4 crystal is realized the output of 5W high power 355nm Ultra-Violet Laser, has effectively promoted laser fundamental frequency optical output power.Insert convex lens in the chamber, the crystal thermal lensing effect is effectively compensated, it is saturated to make that laser output power is not easy, and makes the frequency-doubling crystal place have less hot spot because of the lens focus effect simultaneously, has significantly improved frequency-doubling conversion efficiency.The cutting of frequency tripling crystal by adopting Brewster's angle is compared and the plated film mode, and the working life of frequency tripling crystal can prolong greatly.
Description of drawings
Below in conjunction with accompanying drawing technical scheme of the present invention is described further:
Fig. 1: the single-ended pumping 355nm of semiconductor diode ultraviolet laser principle schematic.
Embodiment
The present invention designs the single-ended pumping 355nm of a kind of semiconductor diode ultraviolet laser, adopts 879.5nm wave band diode pumping highly doped, and overlength Nd:YVO4 crystal is realized the output of 5W high power 355nm Ultra-Violet Laser.
As shown in Figure 1; The single-ended pumping 355nm of semiconductor diode ultraviolet laser comprises semiconductor diode pump source 1 and laser crystal 5, and semiconductor diode pump source 1 is the 879.5nm wave band semiconductor diode pump of power output 40W; The output in semiconductor diode pump source 1 is furnished with first non-spherical lens 2 and second non-spherical lens 3 successively; The output of second non-spherical lens 3 is arranged the output layout laser crystal 5 of first level crossing, 4, the first level crossings 4, and laser crystal 5 is connected lens 6; The output of lens 6 is arranged Q switching 7; The output of Q switching 7 arranges that second level crossing, 8, the second level crossings 8 are connected frequency tripling crystal 9, and frequency tripling crystal 9 is connected two frequency-doubling crystals 10 and the 3rd level crossing 11 successively; Semiconductor diode pump source 1 output 879.5nm pump light is coupled in the laser crystal 5 through the aspherics coupled system and first level crossing of being made up of first non-spherical lens 2 and second non-spherical lens 34; The 1064nm laser that produces is modulated through vibration in the resonant cavity that is made up of first level crossing 4, second level crossing 8 and the 3rd level crossing 11 and by Q switching 7; Twice of the 1064nm fundamental frequency light of modulation converts 1064nm fundamental frequency light into the 532nm frequency doubled light through two frequency-doubling crystals 10; The residue 1064nm fundamental frequency light of secondary frequency multiplication conversion and 532nm frequency doubled light do not carry out and frequency through frequency tripling crystal 9, and the 355nm Ultra-Violet Laser that obtains is from the one side output of frequency tripling crystal 9 Brewster's angles cutting.
The 879.5nm wave band semiconductor diode of power output 40W is adopted in semiconductor diode pump source 1, and its tail optical fiber core diameter is 100 microns, numerical aperture NA=0.22.The enlargement ratio of the aspherics coupled system that first non-spherical lens 2 and second non-spherical lens 3 are formed is 1:8.Laser crystal 5 is Nd:YVO4, and its crystalline size is 3 * 3 * 30mm
3, or long crystal more, crystal doping concentration is 0.55% or high-dopant concentration more.Frequency tripling crystal 9 is II class phase matched mode LBO, and crystal end-face adopts the Brewster's angle cutting, and its crystalline size is 3 * 3 * 25mm
3
At first consider to measure the thermal focal length of crystal, under the big pump power pumping of 30W, the thermal focal length F=150mm of laser crystal.Utilize winlase software to carry out the steady district figure that analog computation obtains the chamber.Can be found out that by steady district figure there is steady district in laser, corresponding thermal focal F=140-510mm is so under high power pumping, laser can keep steady running.
According to technique scheme; Made up the single-ended pumping 355nm of semiconductor diode Ultra-Violet Laser apparatus, when the pumping luminous power is 30W, the power output of laser under the different frequency modulation; When modulating frequency f=30kHz; Laser output power is greater than 5W, and pump light is about 17% to the conversion efficiency of 355nm Ultra-Violet Laser, and so high conversion efficiency is near theoretical value.Under this pump power, when 20kHz, laser pulse width is 12ns.When laser power 5W, record beam quality factor M with the beam quality analyzer
2<1.3.8 hours stability curve of this laser operation can find out that stability is less than 3%.Can find out that from the result ultraviolet laser has conversion efficiency height, good beam quality, advantage such as stable, is widely used in the Ultra-Violet Laser application.
The present invention adopts 879.5nm wave band semiconductor diode as pumping source, has effectively promoted laser fundamental frequency optical output power.Be inserted with the monolithic convex lens in the resonant cavity that first level crossing, second level crossing and the 3rd level crossing constitute; The compensated crystal thermal effect improves power output, improves beam quality; The crystal thermal lensing effect is effectively compensated; It is saturated to make that laser output power is not easy, and makes the frequency-doubling crystal place have less hot spot because of the lens focus effect simultaneously, has significantly improved frequency-doubling conversion efficiency.The cutting of frequency tripling crystal by adopting Brewster's angle is compared and the plated film mode, and the working life of frequency tripling crystal can prolong greatly.
What need understand is: the above only is a preferred implementation of the present invention; For those skilled in the art; Under the prerequisite that does not break away from the principle of the invention, can also make some improvement and retouching, these improvement and retouching also should be regarded as protection scope of the present invention.
Claims (5)
1. the single-ended pumping 355nm of semiconductor diode ultraviolet laser; It is characterized in that: comprise semiconductor diode pump source and laser crystal, the semiconductor diode pump source is the 879.5nm wave band semiconductor diode pump of power output 40W, and the output in semiconductor diode pump source is furnished with first non-spherical lens and second non-spherical lens successively; First non-spherical lens and second non-spherical lens constitute the aspherics coupled system; The output of second non-spherical lens is arranged first level crossing, and the output of first level crossing is arranged laser crystal, and laser crystal is connected lens; The output of lens is arranged Q switching; The output of Q switching is arranged second level crossing, and second level crossing is connected the frequency tripling crystal, and the frequency tripling crystal is connected two frequency-doubling crystals and the 3rd level crossing successively; Semiconductor diode pump source output 879.5nm pump light is coupled in the laser crystal through the aspherics coupled system and first level crossing of being made up of first non-spherical lens and second non-spherical lens; The 1064nm laser that produces is modulated through vibration in the resonant cavity that is made up of first level crossing, second level crossing and the 3rd level crossing and by Q switching; Twice of the 1064nm fundamental frequency light of modulation converts 1064nm fundamental frequency light into the 532nm frequency doubled light through two frequency-doubling crystals; The residue 1064nm fundamental frequency light of secondary frequency multiplication conversion and 532nm frequency doubled light do not carry out and frequency through the frequency tripling crystal, and the 355nm Ultra-Violet Laser that obtains is from the one side output of frequency tripling crystal Brewster's angle cutting.
2. the single-ended pumping 355nm of semiconductor diode according to claim 1 ultraviolet laser is characterized in that: the enlargement ratio of the aspherics coupled system that said first non-spherical lens and second non-spherical lens constitute is 1:8.
3. the single-ended pumping 355nm of semiconductor diode according to claim 1 ultraviolet laser, it is characterized in that: said laser crystal is Nd:YVO4, its crystalline size is 3 * 3 * 30mm
3, crystal doping concentration is 0.55%.
4. the single-ended pumping 355nm of semiconductor diode according to claim 1 ultraviolet laser is characterized in that: said frequency tripling crystal is II class phase matched mode LBO, and its crystalline size is 3 * 3 * 25mm
3
5. the single-ended pumping 355nm of semiconductor diode according to claim 1 ultraviolet laser is characterized in that: be inserted with the monolithic convex lens in the resonant cavity that said first level crossing, second level crossing and the 3rd level crossing constitute.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105932534A (en) * | 2016-06-17 | 2016-09-07 | 北京国科世纪激光技术有限公司 | Intracavity frequency doubling astigmatism compensation type laser |
| CN106410585A (en) * | 2016-06-17 | 2017-02-15 | 北京国科世纪激光技术有限公司 | One-way cycle intracavity frequency doubling laser |
| CN108767633A (en) * | 2018-08-27 | 2018-11-06 | 深圳市格镭激光科技有限公司 | It is a kind of to can be used for the multiple of ultraviolet laser and expand resonant cavity |
| CN110277726A (en) * | 2019-07-11 | 2019-09-24 | 长春新产业光电技术有限公司 | A kind of acousto-optic Q modulation ultraviolet laser |
| CN114498271A (en) * | 2022-02-18 | 2022-05-13 | 北京华岸科技有限公司 | Semiconductor diode pumping ultraviolet laser |
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| CN102163793A (en) * | 2011-02-25 | 2011-08-24 | 天津梅曼激光技术有限公司 | Multiple extra-cavity frequency conversion ultraviolet laser |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105932534A (en) * | 2016-06-17 | 2016-09-07 | 北京国科世纪激光技术有限公司 | Intracavity frequency doubling astigmatism compensation type laser |
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| CN110277726A (en) * | 2019-07-11 | 2019-09-24 | 长春新产业光电技术有限公司 | A kind of acousto-optic Q modulation ultraviolet laser |
| CN114498271A (en) * | 2022-02-18 | 2022-05-13 | 北京华岸科技有限公司 | Semiconductor diode pumping ultraviolet laser |
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Application publication date: 20120620 |