CN108598860B - Picosecond laser double-pass two-stage amplifying device - Google Patents
Picosecond laser double-pass two-stage amplifying device Download PDFInfo
- Publication number
- CN108598860B CN108598860B CN201810519617.2A CN201810519617A CN108598860B CN 108598860 B CN108598860 B CN 108598860B CN 201810519617 A CN201810519617 A CN 201810519617A CN 108598860 B CN108598860 B CN 108598860B
- Authority
- CN
- China
- Prior art keywords
- dichroic mirror
- seed light
- pump source
- beam splitter
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000010287 polarization Effects 0.000 claims abstract description 58
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 230000003287 optical effect Effects 0.000 claims abstract description 33
- 230000003321 amplification Effects 0.000 claims abstract description 26
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 26
- 238000001914 filtration Methods 0.000 claims abstract description 4
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- 230000008878 coupling Effects 0.000 claims description 21
- 238000010168 coupling process Methods 0.000 claims description 21
- 238000005859 coupling reaction Methods 0.000 claims description 21
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005086 pumping Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910009372 YVO4 Inorganic materials 0.000 claims description 3
- 239000000498 cooling water Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 238000005459 micromachining Methods 0.000 abstract description 3
- 239000008710 crystal-8 Substances 0.000 description 12
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005482 strain hardening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2316—Cascaded amplifiers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/10—Information and communication technologies [ICT] supporting adaptation to climate change, e.g. for weather forecasting or climate simulation
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The picosecond laser double-pass two-stage amplification device comprises a picosecond seed source, a polarization beam splitter, a first dichroic mirror, a second dichroic mirror and a third dichroic mirror, wherein the picosecond seed source is positioned at the injection end of the polarization beam splitter and is used for generating seed light and injecting the seed light into the polarization beam splitter; a polarization beam splitter for transmitting seed light in parallel polarization direction and filtering seed light in vertical polarization; the first dichroic mirror is positioned on the optical axis of the seed light transmitted by the polarization beam splitter, and the mirror surface of the first dichroic mirror forms a certain angle with the optical axis; the second dichroic mirror is positioned on the optical axis of the seed light reflected by the first dichroic mirror, and the mirror surface of the second dichroic mirror forms a certain angle with the optical axis, the invention uses the first laser crystal and the second laser crystal to carry out two-stage amplification technology, and the amplification gain can be improved by two orders of magnitude to reach 10 5 The laser pulse amplification device has the advantages of high amplification gain, good output power stability and high output light spot quality, so that the amplified picosecond laser pulse can be widely applied to the field of micromachining.
Description
Technical Field
The invention relates to the technical field of picosecond laser amplification, in particular to a picosecond laser double-pass two-stage amplification device.
Background
With the rapid development of laser technology, lasers are used in various fields such as scientific research, biology, medical treatment, material processing, communication, national defense and the like. Because of the "cold working" advantage of ultrafast lasers in material processing, picosecond lasers with narrow pulse widths, high peak power, and high single pulse energy are of great interest to the industry. However, limited by the extremely high peak power density damage to the SESAM mode-locked device, high power picosecond lasers cannot be generated directly from the oscillator, which has prompted the development of picosecond seed optical amplification devices. The existing picosecond seed light amplifying device has the defects of low amplifying gain, poor output power stability, low output light spot quality and the like, so that the use requirement of high requirements of users cannot be met.
Disclosure of Invention
The invention provides a picosecond laser double-pass two-stage amplifying device for solving the problems of low amplifying gain, poor output power stability, low output light spot quality and the like of the conventional picosecond seed light amplifying device.
In order to achieve the above object, the present invention provides a picosecond laser double-pass two-stage amplifying device, comprising a picosecond seed source, a polarization beam splitter, a first dichroic mirror, a second dichroic mirror and a third dichroic mirror, wherein,
the picosecond seed source is positioned at the injection end of the polarization beam splitter and is used for generating seed light and injecting the seed light into the polarization beam splitter;
a polarization beam splitter for transmitting seed light in parallel polarization direction and filtering seed light in vertical polarization;
the first dichroic mirror is positioned on the optical axis of the seed light transmitted by the polarization beam splitter, and the mirror surface of the first dichroic mirror forms a certain angle with the optical axis;
the second dichroic mirror is positioned on the optical axis of the seed light reflected by the first dichroic mirror, and the mirror surface of the second dichroic mirror forms a certain angle with the optical axis;
the third dichroic mirror is positioned on the optical axis of the seed light reflected by the second dichroic mirror, and the mirror surface of the second dichroic mirror is perpendicular to the optical axis, so that the seed light reflected by the third dichroic mirror can return to the polarization beam splitter through the original transmission light path and is output by the polarization beam splitter;
a first half wave plate is arranged on a light path between the picosecond seed polarization beam splitter, a Faraday rotary mirror, a second half wave plate and a focusing lens are sequentially arranged on a light path between the polarization beam splitter and the first dichroic mirror along the direction from the seed light to the first dichroic mirror, and a first laser crystal and a second laser crystal are respectively arranged on the light paths of the first dichroic mirror and the second dichroic mirror and on the light paths of the second dichroic mirror and the third dichroic mirror;
the outer side of the first dichroic mirror and the outer side of the second dichroic mirror are symmetrically provided with a first pump source and a second pump source respectively, and a focal spot generated by the first pump source transmitting through the first dichroic mirror, a focal spot generated by the second pump source transmitting through the second dichroic mirror and a focal spot of the seed light by the focusing lens are overlapped in the first laser crystal;
and a third pump source and a fourth pump source are symmetrically arranged on the outer side of the second dichroic mirror and the outer side of the third dichroic mirror respectively, and a focal spot generated when the third pump source transmits through the second dichroic mirror, a focal spot generated when the fourth pump source transmits through the third dichroic mirror and a focal spot of seed light are overlapped in the second laser crystal.
As a further preferable technical scheme of the invention, a first coupling lens group is further arranged on a light path between the first pump source and the first dichroic mirror, a second coupling lens group is further arranged on a light path between the second pump source and the second dichroic mirror, a third coupling lens group is further arranged on a light path between the third pump source and the second dichroic mirror, and a fourth coupling lens group is further arranged on a light path between the fourth pump source and the third dichroic mirror.
As a further preferable technical scheme of the invention, the first pump source, the second pump source, the third pump source and the fourth pump source are all semiconductor diode pump sources, the wavelength of the semiconductor diode pump sources is 808nm or 88Xnm, the average output power is 25W, the output fiber core is 200-400 um, and the numerical aperture na=0.22.
As a further preferable technical scheme of the present invention, the first laser crystal and the second laser crystal are both laser crystals with linear polarization radiation property, and the model number is Nd: YVO4 or Nd: GVO4.
As a further preferable technical scheme of the invention, the first laser crystal and the second laser crystal are horizontally arranged, and the end face of the first laser crystal and the end face of the second laser crystal are respectively provided with a wedge angle of 1-2 degrees for preventing self-oscillation.
As a further preferable technical scheme of the invention, the first laser crystal and the second laser crystal are also connected with circulating cooling water.
As a further preferable embodiment of the present invention, the incident angle for the incident seed light on the first dichroic mirror is 45 °, and the incident angle for the incident seed light on the second dichroic mirror is 45 °.
As a further preferable technical scheme of the invention, the first dichroic mirror, the second dichroic mirror and the third dichroic mirror are all plated with a pumping light antireflection film and a seed light high reflection film.
As a further preferable technical scheme of the invention, the first laser crystal and the second laser crystal are plated with a pumping light antireflection film and a seed light antireflection film.
As a further preferable technical scheme of the invention, the first half-wave plate, the second half-wave plate and the focusing lens are all plated with seed light antireflection films.
The picosecond laser double-pass two-stage amplifying device can achieve the following beneficial effects:
the picosecond laser double-pass two-stage amplifying device of the invention utilizes the two laser crystals of the first laser crystal and the second laser crystal to carry out two-stage amplifying technology, improves the amplifying gain of seed light, and can improve the amplifying gain by two orders of magnitude until reaching 10 after adopting two-stage amplifying 5 Therefore, the invention has the advantages of high amplification gain, good output power stability and high output light spot quality, and the amplified picosecond laser pulse can be widely applied to the micromachining field.
Drawings
The invention will be described in further detail with reference to the drawings and the detailed description.
FIG. 1 is a schematic diagram of an example of a picosecond laser two-pass two-stage amplifying device according to the present invention;
fig. 2 is a light path diagram of the picosecond laser double-pass two-stage amplifying device shown in fig. 1 according to the present invention.
In the figure: 1. picosecond seed source 2, first half wave plate 3, polarization beam splitter, 4, faraday rotary mirror 5, second half wave plate 6, focusing lens 7, first dichroic mirror 8, first laser crystal 9, second dichroic mirror 10, second laser crystal 11, third dichroic mirror 12, first pump source 13, first coupling lens group 14, second pump source 15, second coupling lens group 16, third pump source 17, third coupling lens group 18, fourth pump source 19, fourth coupling lens group.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
The invention will be further described with reference to the drawings and detailed description. The terms such as "upper", "lower", "left", "right", "middle" and "a" in the preferred embodiments are merely descriptive, but are not intended to limit the scope of the invention, as the relative relationship changes or modifications may be otherwise deemed to be within the scope of the invention without substantial modification to the technical context.
As shown in fig. 1, the picosecond laser double-pass two-stage amplifying device includes a picosecond seed source 1, a polarization beam splitter 3, a first dichroic mirror 7, a second dichroic mirror 9, and a third dichroic mirror 11, wherein,
the picosecond seed source 1 is positioned at the injection end of the polarization beam splitter 3 and is used for generating seed light and injecting the seed light into the polarization beam splitter 3;
a polarization beam splitter 3 for transmitting seed light in a parallel polarization direction and filtering seed light in a perpendicular polarization direction;
the first dichroic mirror 7 is positioned on the optical axis of the seed light transmitted by the polarization beam splitter 3, and the mirror surface of the first dichroic mirror 7 forms a certain angle with the optical axis;
a second dichroic mirror 9 positioned on an optical axis on which the seed light is reflected by the first dichroic mirror 7, and a mirror surface of the second dichroic mirror 9 forms an angle with the optical axis;
a third dichroic mirror 11 positioned on an optical axis of the seed light reflected by the second dichroic mirror 9, and a mirror surface of the second dichroic mirror 9 is perpendicular to the optical axis, so that the seed light reflected by the third dichroic mirror 11 can return to the polarization beam splitter 3 through the original transmission optical path and be output by the polarization beam splitter 3;
a first half wave plate 2 is arranged on a light path between the picosecond seed source 1 and the polarization beam splitter 3, a Faraday rotary mirror 4, a second half wave plate 5 and a focusing lens 6 are sequentially arranged on a light path between the polarization beam splitter 3 and the first dichroic mirror 7 along the direction from the polarization beam splitter 3 to the first dichroic mirror 7, a first laser crystal 8 and a second laser crystal 10 are respectively arranged on a light path between the first dichroic mirror 7 and the second dichroic mirror 9 and a light path between the second dichroic mirror 9 and the third dichroic mirror 11;
the outer sides of the first dichroic mirror 7 and the second dichroic mirror 9 are symmetrically provided with a first pump source 12 and a second pump source 14 respectively, and a focal spot generated by the first pump source 12 transmitting through the first dichroic mirror 7, a focal spot generated by the second pump source 14 transmitting through the second dichroic mirror 9, and a focal spot of the seed light by the focusing lens 6 are overlapped in the first laser crystal 8;
the outer side of the second dichroic mirror 9 and the outer side of the third dichroic mirror 11 are symmetrically provided with a third pump source 16 and a fourth pump source 18, respectively, and the focal spot generated by the third pump source 16 transmitting through the second dichroic mirror 9, the focal spot generated by the fourth pump source 18 transmitting through the third dichroic mirror 11, and the focal spot of the seed light are overlapped in the second laser crystal 10;
the optical path between the first pump source 12 and the first dichroic mirror 7 is further provided with a first coupling lens group 13, the optical path between the second pump source 14 and the second dichroic mirror 9 is further provided with a second coupling lens group 15, the optical path between the third pump source 16 and the second dichroic mirror 9 is further provided with a third coupling lens group 17, and the optical path between the fourth pump source 18 and the third dichroic mirror 11 is further provided with a fourth coupling lens group 19.
In the device, the Faraday rotation mirror 4 is utilized to regulate and control the polarization direction of seed light, and the polarization selective transmission or reflection characteristic of the polarization beam splitter 3 is matched, so that the double-pass amplification of the seed light can be realized.
The realization principle of the double-pass amplification technology is as follows:
the seed light with parallel polarization is transmitted by the polarization beam splitter 3, then passes through the Faraday rotation mirror 4, the polarization direction is rotated by 45 degrees, finally, when the original path returns, the seed light passes through the Faraday rotation mirror 4 again, the polarization direction is rotated by 45 degrees again, and the polarization direction is changed from parallel polarization to vertical polarization, so that the seed light can be reflected by the polarization beam splitter 3.
As shown in fig. 2, the optical transmission path of the device of the present invention is as follows:
seed light output by the picosecond seed source 1 sequentially passes through a first half-wave plate 2, a polarization beam splitter 3, a Faraday rotary mirror 4 and a second half-wave plate 5, and then sequentially passes through the focusing of a focusing lens 6 and the reflection of a first dichroic mirror 7 to focus the seed light on a first laser crystal 8; then the seed light is transmitted out of the first laser crystal 8, sequentially passes through the reflection of the second dichroic mirror 9 and the second laser crystal 10, finally enters the third dichroic mirror 11, and is reflected by the dichroic mirror because the incident angle of the third dichroic mirror 11 is 90 degrees, returns in the original path of the seed light, passes through the Faraday rotator 4 again, and finally is reflected and output by the polarization beam splitter 3.
In the transmission process of the seed light, pu Yuanguang of the first pump source 12 sequentially passes through the first coupling lens group 13 and the first dichroic mirror 7, and pump light of the second pump source 14 sequentially passes through the second coupling lens group 15 and the second dichroic mirror 9, and focal spots of the first coupling lens group and the second dichroic mirror 9 are overlapped with a focal spot of the seed light in the first laser crystal 8; the Pu Yuanguang of the third pump source 16 sequentially passes through the third coupling lens group 17, the second dichroic mirror 9 and the pump light of the fourth pump source 18 sequentially passes through the fourth coupling lens group 19 and the third dichroic mirror 11, and focal spots and seed light spots of the two are overlapped in the second laser crystal 10. Under continuous pumping of the first to fourth pump sources 18, the seed light obtains gain from the first laser crystal 8, the second laser crystal 10, and is amplified.
The invention relates to a picosecond laser double-pass two-stage amplifying device,the two-stage amplification technology by using the two laser crystals of the first laser crystal 8 and the second laser crystal 10 improves the amplification gain of the seed light, and the traveling wave single-stage amplification gain is only 10 3 After two-stage amplification, the amplification gain can be improved by two orders of magnitude to reach 10 5 。
In a specific implementation, the first pump source 12, the second pump source 14, the third pump source 16 and the fourth pump source 18 are all semiconductor diode pump sources, the wavelength of the semiconductor diode pump sources is 808nm or 88Xnm, the average output power is 25W, the output fiber core is 200-400 um, and the numerical aperture na=0.22.
In a specific implementation, the first laser crystal 8 and the second laser crystal 10 are both laser crystals with linear polarization radiation property, and the model number of the laser crystals is Nd: YVO4 or Nd: GVO4, the first laser crystal 8 and the second laser crystal 10 are both placed horizontally, and the end face of the first laser crystal 8 and the end face of the second laser crystal 10 are both provided with a wedge angle of 1-2 degrees for preventing self-oscillation. And the first laser crystal 8 and the second laser crystal 10 are also connected with circulating cooling water.
In a specific implementation, the incident angle for the incident seed light on the first dichroic mirror 7 is 45 °, and the incident angle for the incident seed light on the second dichroic mirror 9 is 45 °.
In the implementation, the first dichroic mirror 7, the second dichroic mirror 9 and the third dichroic mirror 11 are all plated with a pumping light antireflection film and a seed light high reflection film; the first laser crystal 8 and the second laser crystal 10 are plated with a pumping light antireflection film and a seed light antireflection film; the first half wave plate 2, the second half wave plate 5 and the focusing lens 6 are all plated with seed light antireflection films.
In one embodiment of the present invention, when the power of the seed light injected from the seed source is 0.1mW and the repetition frequency is 100KHz, the amplified seed light output power is 10.6W and the amplification gain is about 10 by optimizing the pump power of the first to fourth pump sources 18 and optimizing the coincidence degree of the light spots of the seed light and the light spots of the pump light in the first and second laser crystals 10 and the light spot pattern matching 5 . Continuous monitoring of amplified laser power for up to 6 hoursAnd controlling recording, wherein the power fluctuation is less than 2%, and the roundness of the amplified output light spot is 0.99. The device has the advantages of high amplification gain, good output power stability and high output light spot quality, and the amplified picosecond laser pulse can be widely applied to the field of micromachining.
While particular embodiments of the present invention have been described above, it will be appreciated by those skilled in the art that these are merely illustrative, and that many variations or modifications may be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined only by the appended claims.
Claims (9)
1. The picosecond laser double-pass two-stage amplifying device is characterized by comprising a picosecond seed source, a polarization beam splitter, a first dichroic mirror, a second dichroic mirror and a third dichroic mirror, wherein,
the picosecond seed source is positioned at the injection end of the polarization beam splitter and is used for generating seed light and injecting the seed light into the polarization beam splitter;
a polarization beam splitter for transmitting seed light in parallel polarization direction and filtering seed light in vertical polarization;
the first dichroic mirror is positioned on the optical axis of the seed light transmitted by the polarization beam splitter, and the mirror surface of the first dichroic mirror forms a certain angle with the optical axis;
the second dichroic mirror is positioned on the optical axis of the seed light reflected by the first dichroic mirror, and the mirror surface of the second dichroic mirror forms a certain angle with the optical axis;
the third dichroic mirror is positioned on the optical axis of the seed light reflected by the second dichroic mirror, and the mirror surface of the second dichroic mirror is perpendicular to the optical axis, so that the seed light reflected by the third dichroic mirror can return to the polarization beam splitter through the original transmission light path and is output by the polarization beam splitter;
a first half wave plate is arranged on a light path between the picosecond seed polarization beam splitter, a Faraday rotary mirror, a second half wave plate and a focusing lens are sequentially arranged on a light path between the polarization beam splitter and the first dichroic mirror along the direction from the seed light to the first dichroic mirror, and a first laser crystal and a second laser crystal are respectively arranged on the light paths of the first dichroic mirror and the second dichroic mirror and on the light paths of the second dichroic mirror and the third dichroic mirror;
the outer side of the first dichroic mirror and the outer side of the second dichroic mirror are symmetrically provided with a first pump source and a second pump source respectively, and a focal spot generated by the first pump source transmitting through the first dichroic mirror, a focal spot generated by the second pump source transmitting through the second dichroic mirror and a focal spot of the seed light by the focusing lens are overlapped in the first laser crystal;
the outer side of the second dichroic mirror and the outer side of the third dichroic mirror are symmetrically provided with a third pump source and a fourth pump source respectively, and a focal spot generated when the third pump source transmits through the second dichroic mirror, a focal spot generated when the fourth pump source transmits through the third dichroic mirror and a focal spot of the seed light by the focusing lens are overlapped in the second laser crystal; wherein,
the first dichroic mirror has an incident angle of 45 degrees for incident seed light, the second dichroic mirror has an incident angle of 45 degrees for incident seed light, and the third dichroic mirror has an incident angle of 90 degrees.
2. The picosecond laser two-pass two-stage amplification device according to claim 1, wherein a first coupling lens group is further arranged on an optical path between the first pump source and the first dichroic mirror, a second coupling lens group is further arranged on an optical path between the second pump source and the second dichroic mirror, a third coupling lens group is further arranged on an optical path between the third pump source and the second dichroic mirror, and a fourth coupling lens group is further arranged on an optical path between the fourth pump source and the third dichroic mirror.
3. The picosecond laser two-pass two-stage amplification device according to claim 2, wherein the first pump source, the second pump source, the third pump source and the fourth pump source are all semiconductor diode pump sources, the wavelength of the semiconductor diode pump sources is 808nm or 88Xnm, the average output power is 25W, the output fiber core is 200-400 um, and the numerical aperture na=0.22.
4. The two-pass two-stage amplification device of picosecond laser according to claim 3, wherein the first and second laser crystals are each a laser crystal having linear polarization radiation property, and are each Nd: YVO4 or Nd: GVO4.
5. The picosecond laser two-pass two-stage amplification device according to claim 4, wherein the first laser crystal and the second laser crystal are both horizontally arranged, and the end face of the first laser crystal and the end face of the second laser crystal are both provided with a wedge angle of 1-2 degrees for preventing self-oscillation.
6. The picosecond laser double-pass two-stage amplification device according to claim 5, wherein the first laser crystal and the second laser crystal are both further connected with circulating cooling water.
7. The picosecond laser two-pass two-stage amplification device according to claim 6, wherein the first, second and third dichroic mirrors are each coated with a pumping light antireflection film and a seed light high reflection film.
8. The two-stage amplification device of claim 7, wherein the first and second laser crystals are coated with a pump light anti-reflection film and a seed light anti-reflection film.
9. The two-pass two-stage amplification device of claim 8, wherein the first half-wave plate, the second half-wave plate, and the focusing lens are coated with a seed light anti-reflection film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810519617.2A CN108598860B (en) | 2018-05-25 | 2018-05-25 | Picosecond laser double-pass two-stage amplifying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810519617.2A CN108598860B (en) | 2018-05-25 | 2018-05-25 | Picosecond laser double-pass two-stage amplifying device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108598860A CN108598860A (en) | 2018-09-28 |
| CN108598860B true CN108598860B (en) | 2023-11-17 |
Family
ID=63629196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810519617.2A Active CN108598860B (en) | 2018-05-25 | 2018-05-25 | Picosecond laser double-pass two-stage amplifying device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108598860B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111884031B (en) * | 2020-07-07 | 2021-06-15 | 深圳市海目星激光智能装备股份有限公司 | Optimization method and optimization system for roundness of laser spot |
| CN112563876A (en) * | 2020-12-07 | 2021-03-26 | 中山大学 | High-efficiency rod-shaped laser amplifier and working method thereof |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208458B1 (en) * | 1997-03-21 | 2001-03-27 | Imra America, Inc. | Quasi-phase-matched parametric chirped pulse amplification systems |
| KR20020000406A (en) * | 2000-06-24 | 2002-01-05 | 오길록 | Two-stage reflective optical fiber amplifier |
| CN101009420A (en) * | 2007-01-26 | 2007-08-01 | 清华大学 | End pumped laser system |
| CN102581478A (en) * | 2012-01-20 | 2012-07-18 | 哈尔滨工业大学 | Device and method for ultrafast picosecond pulse laser machining of super-hydrophobicity micro-structure surface |
| CN102769245A (en) * | 2012-07-16 | 2012-11-07 | 中国科学院上海光学精密机械研究所 | 1064nm single-frequency double-pulse laser for seed injection |
| CN103236629A (en) * | 2013-04-24 | 2013-08-07 | 广东汉唐量子光电科技有限公司 | Polarization-stable optical fiber laser cascade amplifier |
| CN103887701A (en) * | 2014-03-19 | 2014-06-25 | 浙江大学 | Device and method for controlling light beam quality in laser amplifier through self-reappearing of wavefront outside cavity |
| CN107465071A (en) * | 2017-07-20 | 2017-12-12 | 杭州波长光电科技有限公司 | Optical fiber-solid mixed amplification laser system |
| CN208241075U (en) * | 2018-05-25 | 2018-12-14 | 深圳市海目星激光智能装备股份有限公司 | A kind of picosecond laser round trip two-stage amplifying device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6597494B2 (en) * | 2001-07-13 | 2003-07-22 | Fujikura Ltd. | Polarization maintaining optical fiber amplifier and optical amplifier |
| CN102510000B (en) * | 2011-12-29 | 2014-03-19 | 苏州德龙激光股份有限公司 | High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification |
| US20140056321A1 (en) * | 2012-08-22 | 2014-02-27 | Xiaoyuan Peng | Optical amplifier and process |
-
2018
- 2018-05-25 CN CN201810519617.2A patent/CN108598860B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6208458B1 (en) * | 1997-03-21 | 2001-03-27 | Imra America, Inc. | Quasi-phase-matched parametric chirped pulse amplification systems |
| KR20020000406A (en) * | 2000-06-24 | 2002-01-05 | 오길록 | Two-stage reflective optical fiber amplifier |
| CN101009420A (en) * | 2007-01-26 | 2007-08-01 | 清华大学 | End pumped laser system |
| CN102581478A (en) * | 2012-01-20 | 2012-07-18 | 哈尔滨工业大学 | Device and method for ultrafast picosecond pulse laser machining of super-hydrophobicity micro-structure surface |
| CN102769245A (en) * | 2012-07-16 | 2012-11-07 | 中国科学院上海光学精密机械研究所 | 1064nm single-frequency double-pulse laser for seed injection |
| CN103236629A (en) * | 2013-04-24 | 2013-08-07 | 广东汉唐量子光电科技有限公司 | Polarization-stable optical fiber laser cascade amplifier |
| CN103887701A (en) * | 2014-03-19 | 2014-06-25 | 浙江大学 | Device and method for controlling light beam quality in laser amplifier through self-reappearing of wavefront outside cavity |
| CN107465071A (en) * | 2017-07-20 | 2017-12-12 | 杭州波长光电科技有限公司 | Optical fiber-solid mixed amplification laser system |
| CN208241075U (en) * | 2018-05-25 | 2018-12-14 | 深圳市海目星激光智能装备股份有限公司 | A kind of picosecond laser round trip two-stage amplifying device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108598860A (en) | 2018-09-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107465071B (en) | Optical fiber-solid mixed amplification laser system | |
| CN108039639A (en) | Multi-pass ultrashort pulse laser amplifier based on single crystal optical fiber polarization control | |
| CN203774604U (en) | Semiconductor saturable absorber mirror (SESAM) passive mode-locking laser | |
| CN107086430B (en) | A kind of third harmonic generation ultraviolet laser | |
| CN108988117B (en) | Laser amplifier based on polarization synthesis laser gain | |
| CN102904155A (en) | Full solid state picosecond laser regenerative amplifier | |
| CN102510000B (en) | High-gain double-stroke traveling-wave amplifier for picosecond laser pulse amplification | |
| CN109643879A (en) | Frequency double laser and harmonic laser production method | |
| CN108598860B (en) | Picosecond laser double-pass two-stage amplifying device | |
| CN103811990A (en) | Terahertz parameter source and application thereof on the basis of potassium titanium oxide arsenate crystals | |
| CN108512027B (en) | Annular cavity amplifying device for picosecond seed laser pulse | |
| CN102545018B (en) | Semiconductor laser pumping-based low-repetition-frequency all solid-state picosecond blue light laser | |
| CN110120625B (en) | Laser amplification method based on disc crystal and solid laser amplifier | |
| CN207542560U (en) | Multi-pass ultrashort pulse laser amplifier based on single crystal optical fiber polarization control | |
| CN104319603A (en) | Strip laser amplifier and laser output method thereof | |
| CN208316016U (en) | Annular chamber amplifying device for picosecond seed laser pulse | |
| CN103794293A (en) | Terahertz parameter source based on potassium titanyl phosphate crystal and application thereof | |
| CN112563876A (en) | High-efficiency rod-shaped laser amplifier and working method thereof | |
| CN109510056B (en) | A kind of while output the hollow laser of dual wavelength | |
| CN108767649A (en) | Disresonance subnanosecond pulse laser | |
| He et al. | 30 W output of short pulse duration nanosecond green laser generated by a hybrid fiber-bulk MOPA system | |
| CN208241075U (en) | A kind of picosecond laser round trip two-stage amplifying device | |
| CN209544803U (en) | A kind of big energy pulse laser of compact | |
| CN104795719B (en) | A kind of apparatus and method for obtaining the output of high-energy single-frequency laser | |
| CN109687273B (en) | Laser device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 518000 301, Building B, Kemlong Science Park, Guansheng 5th Road, Luhu Community, Guanhu Street, Longhua District, Shenzhen, Guangdong Province (one photo and multiple address enterprises) Applicant after: Hymson Laser Technology Group Co., Ltd. Address before: 518000 Longhua New District, Shenzhen, Guangdong, 26 guanhuan Road, Guanlong street, Jun long community. Applicant before: SHENZHEN HYMSON LASER INTELLIGENT EQUIPMENTS Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |