CN102581478A - Device and method for ultrafast picosecond pulse laser machining of super-hydrophobicity micro-structure surface - Google Patents
Device and method for ultrafast picosecond pulse laser machining of super-hydrophobicity micro-structure surface Download PDFInfo
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Abstract
A device and a method for ultrafast picosecond pulse laser machining of a super-hydrophobicity micro-structure surface belong to the field of preparation of functional micro-structure surfaces, and aim to solve the problems of high investment and low output of an existing machining process and existing machining technology for functional elements. The device comprises an ultrafast picosecond pulse laser source, an optical isolator, five reflectors, a rotary liquid crystal polarizing film, a polarization beam splitter, two beam collectors, a half wave plate, a focusing lens, frequency-doubling generator LBO (lithium triborate) crystal, a dichroic mirror, a light control device, a beam profile curvometer, a beam amplifying component Kepler beam expander, a focusing machining lens, a machining platform, a microscopy imaging CCD (charge coupled device) component and a control system. The method includes the stepsof: fixing a steel workpiece onto a surface driven by a Z-directional guide rail of the machining platform; adjusting a light path; detecting the surface of the workpiece by a probe; and driving the workpiece to move by means of movement of an X-directional guide rail and a Y-directional guide rail of the machining platform. The device and the method are used for preparing the super-hydrophobicity micro-structure surface.
Description
Technical field
The present invention relates to a kind of device and method of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface, belong to the preparation field of functional micro-structure surface.
Background technology
Since the earth has life, experienced the evolutionary process in several hundred million years.This evolution makes nearly all species or material surface all have certain specific function from the macroscopic view to the microcosmic.Wherein very typical a kind of functional characteristic is exactly that body structure surface has fabulous characteristic that is difficult for getting wet and self-cleaning ability.Like the leaf of the leaf of the wing of lepidopterous insects such as cicada, butterfly, cabbage, broom top, paddy rice etc., but the most representative still leaf of lotus flower, therefore this functional also be referred to as " lotus leaf effect ".Further discover the micro-nano dual structure of material surface and be the basic reason that this type biological surface has the characteristic of not getting wet attached to this type of structural wax coat and siloxanes.Receive the inspiration of the Nature just, people begin the functional surface structure in natural imitation circle, and from the angle of bionical science, preparation has the specific function surface of super-hydrophobicities such as " automatically cleanings ".Thereby attempt to solve problems such as the human energy crisis of increasingly sharpening that is faced, environmental pollution.This just green manufacturing and life idea, what make functional micro-structure surfaces such as " automatically cleanings " creates one of research hot issue in the international scope.
At present, mainly contain to the preparation method of this type super hydrophobic functional property micro-structure surface: Machining Technology, like milling, cutting etc.; Direct electronic beam writing technology; Photoetching technique; Etching and lithographic printing; Chemical/physical vapour deposition and Laser Processing etc.The research of traditional mechanical processing method mainly concentrates on the finished surface that obtains smooth or ultra-smooth how efficiently; The manufacturing of function of surface structure then be material surface prepare be different from smooth object surface have different-shape, different scale, different dimension, a surface texture of difference in functionality.Though direct electronic beam writing technology can process nano level structure, the range of work is little, and efficient is low; Photoetching technique only limits to the processing of two micro-structurals and little depth-to-width ratio three-dimensional structure because field depth limits, and working (machining) efficiency is extremely low, in addition working environment is required very harsh; Adopt etching technique,, be easy to generate defectives such as internal stress at machining area, thereby influence the functional characteristic of product though can realize the micro-structural processing of three-dimensional appearance; Though and deposition technique can be realized preparation faster, the controllability extreme difference, and also the structural behaviour that generates is unstable.Simultaneously, the physical dimension precision after said method tends to make and processes changes.
Laser Processing is a kind of emerging efficient, the high-quality manufacturing process that produces at the end of last century.But to continuous laser and pulse width between nanosecond to ' tradition ' Laser Processing between the microsecond; Because fuel factor, the existence of the mechanical defects such as change of fusing, burr, crackle and machining area institutional framework and make the application of such laser receive serious limit.
And ultrashort and ultrafast laser rely on its unique processed edge can realize the highly-efficient processing of material is handled, for the processing of functional element provides more processed edge.Ultrashort and ultrafast laser is processed as a kind of general flexible process technology; Not only can realize the processing of submicron order size characteristic to materials such as metal, semiconductor and dielectrics; And can also be with its distinctive optical characteristics; Produce the reconstruct of micro-nano dual structure at material surface, and matrix and structure are had no damage.This has just guaranteed that the structure and the function thereof of being processed have long-term stability.But all there are the defective of high investment, low output in the processing technology of prior function property element and process technology.
Summary of the invention
The present invention is for the processing technology that solves existing capability property element and the high investment of process technology existence and the problem of low output, and a kind of device and method of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface is provided.
The device of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to the invention; It comprises ultrafast picosecond pulse laser source; Optical isolator; First speculum; Second speculum; The 3rd speculum; The 4th speculum; The 5th speculum; The rotation liquid crystal polarizer; Polarization beam apparatus; First beam dump; Second beam dump; Half-wave plate; First condenser lens; Frequency multiplication generator lbo crystal; Dichronic mirror; Diaphragm; The beam profile curvometer; Light beam amplifier module Kepler beam expanding lens; Focus on the processing camera lens; Processing platform; Micro-imaging CCD assembly and control system
After amplifying, laser beam passes built-in regenerative amplifier in ultrafast picosecond pulse laser source is incident to optical isolator; Light beam through optical isolator is reflected by first speculum, and the folded light beam of first speculum forms light beam through the rotation liquid crystal polarizer, and this light beam is incident to polarization beam apparatus; Polarization beam splitting through polarization beam apparatus; Light beam is divided into two parts, and the folded light beam that a part is reflected is received by the optical detection termination of first beam dump, and another part light beam is incident to first condenser lens through half-wave plate; The outgoing beam of this first condenser lens is incident to second speculum and reflects; The folded light beam of second speculum after the 3rd mirror reflects, is incident to frequency multiplication generator lbo crystal again, and light beam is behind frequency multiplication generator lbo crystal conversion wavelength; Wavelength becomes 532nm by 1064nm; Light beam behind the conversion wavelength is incident to dichronic mirror, and the light beam that is mingled in the 1064nm in the wavelength 532nm light beam is after the dichronic mirror reflection, and folded light beam is received by the optical detection termination of second beam dump; And being the light beam of 532nm, wavelength is incident to diaphragm through dichronic mirror; The outgoing beam of diaphragm is incident to the 4th speculum, after light beam amplifier module Kepler beam expanding lens expands bundle, is incident to the 5th speculum through the folded light beam of the 4th mirror reflects, is received by the optical detection termination of beam profile curvometer through the surplus light of a small amount of transmission of the 4th speculum transmission; The light beam that is expanded bundle by light beam amplifier module Kepler beam expanding lens is incident to through the 5th speculum and focuses on the processing camera lens, is used for the workpiece that is fixed on the processing platform is processed through the light beam that focuses on the processing lens focus;
The a small amount of surplus light that reflects from workpiece is received by the optical receiving end of micro-imaging CCD assembly; Said micro-imaging CCD assembly is used for the process of workpiece is carried out on-line monitoring, the control signal I/O of the control signal input/output terminal connection control system of micro-imaging CCD assembly.
Said light beam amplifier module Kepler beam expanding lens is made up of second condenser lens and the 3rd condenser lens, after second condenser lens and the 3rd condenser lens expand bundle, is incident to the 5th speculum through the folded light beam of the 4th mirror reflects.
The focal length of said second condenser lens is 40mm, and the focal length of the 3rd condenser lens is 100mm, and the centre distance of second condenser lens and the 3rd condenser lens is 140mm.
It also comprises external amplifier active medium; External amplifier active medium is arranged between the 3rd speculum and the frequency multiplication generator lbo crystal; The light beam of the 3rd mirror reflects is incident to external amplifier active medium, exports through the light beam of external amplifier active medium amplified energy and is incident to frequency multiplication generator lbo crystal; Said external amplifier active medium is Nd:YVO
4Crystal.
Said optical isolator is made up of two polariscopes and faraday's rotary body.
A kind of method of processing ultra-hydrophobicity micro-structure surface of the device based on above-mentioned ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface, it may further comprise the steps:
Step 1: surface roughness Ra is fixed on processing platform 19Z less than 5 μ m, the depth of parallelism on the surface that guide rail drives less than the steel workpiece of 10 μ m;
Step 2: regulate light path, the focus of the light beam that focuses on the processing lens focus is dropped on the processing stand of surface of the work;
With probe E the surface of workpiece is surveyed, confirmed workpiece and focus on the relative position between the focus of light beam of processing lens focus, make process be in burnt machining state;
Step 3: the X through processing platform drives workpiece motion s to guide rail and Y to the compound motion of guide rail, and the relative motion of the focus of the light beam of generation and said focusing processing lens focus forms the machining locus to surface of the work.
The detailed process of the adjusting light path described in the step 2 is:
Ultrafast laser bundle by ultrafast picosecond pulse laser source emission infrared band; After built-in regenerative amplifier amplification; First polariscope by optical isolator produces linearly polarized light beam; This linearly polarized light beam rotates 45 ° by faraday's rotary body of optical isolator then, and second polariscope through optical isolator produces linearly polarized light beam again;
Adjustment half-wave plate and then adjust the angle of its outgoing beam, the light beam that first condenser lens is converged amplifies in external amplifier active medium, and the beam diameter after amplifying through external amplifier active medium is less than 1.5mm;
Beam diameter after amplifier module Kepler beam expanding lens expands bundle is 5mm, to be fit to and the clear aperture coupling that focuses on the processing camera lens.
The pulse width of the ultrafast laser bundle of the infrared band of said ultrafast picosecond pulse laser source emission is 8.1ps, and wavelength is 1064nm, and repetition rate is 1-640kHz, and maximum single pulse energy is 100 μ J; The wavelength of light beam is 532nm behind frequency multiplication generator lbo crystal conversion wavelength.
Said processing platform along X to guide rail and Y to guide rail, the movement velocity scope in processing super hydrophobic functional property micro-structure surface process is 100mm/min-1000mm/min.
Process in the super hydrophobic functional property micro-structural process of the present invention; The focus adjustment scope that focuses on the processing camera lens is 50-150mm; Article two, the sweep span between the adjacent machining locus line is 3-15 μ m, and the scanning times in the whole machining process process is 3-10 time, and the power density scope is 0.4J/cm
2-2.4J/cm
2
Advantage of the present invention is: the present invention adopts ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure, has solved problems such as existing poor efficiency, high investment, complex process, the difficult popularization of technology such as die steel material surface preparation ultra-hydrophobicity micro-structure surface the time effectively.In the present invention, the highest process velocity can reach 1000mm/min, and making area of processing is 5 * 5mm
2Time of ultra-hydrophobicity micro-structure surface be merely 10min, then need 1h at least with technology such as femtosecond laser, vapour deposition or etchings.And processing method of the present invention realized the time processing shaping, need not any following process and handles and just can make the micro-structured component with micro-nano dual structure possess the super-hydrophobic functional characteristic of Denging, and have long-term functional stabilization.The requirement that the inventive method has no environment, and environmentally safe, technology is simple, therefore promotes easily.
The present invention has well realized the preparation of ultra-hydrophobicity micro-structure surface, thereby has realized having efficient, the low cost and the green production of self-cleaning functionalization micro-structure surface.
Description of drawings
Fig. 1 is the light channel structure sketch map of machining functions property micro-structural device of the present invention;
Fig. 2 is the structural representation of processing platform; C is the light beam through focusing processing lens focus among the figure, and E is a probe;
Fig. 3 is the sketch map of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to the invention; A is the matrix material of workpiece among the figure, and B is the micro-structural that the finished surface of workpiece forms;
Fig. 4 is the contact angle view of unprocessed surface of workpiece and drop; D is a drop among the figure;
The surface that Fig. 5 has the micro-nano dual structure for workpiece adopts the inventive method to process and the contact angle view of drop.
The specific embodiment
The specific embodiment one: this embodiment is described below in conjunction with Fig. 1 and Fig. 2; The device of the said ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface of this embodiment; It comprises ultrafast picosecond pulse laser source 1; Optical isolator 2; The first speculum 3-1; The second speculum 3-2; The 3rd speculum 3-3; The 4th speculum 3-4; The 5th speculum 3-5; Rotation liquid crystal polarizer 4; Polarization beam apparatus 5; The first beam dump 6-1; The second beam dump 6-2; Half-wave plate 7; First condenser lens 8; Frequency multiplication generator lbo crystal 10; Dichronic mirror 11; Diaphragm 12; Beam profile curvometer 13; Light beam amplifier module Kepler beam expanding lens 16; Focus on processing camera lens 17; Processing platform 19; Micro-imaging CCD assembly 20 and control system 21
After amplifying, 1 laser beam passes built-in regenerative amplifier in ultrafast picosecond pulse laser source is incident to optical isolator 2; Light beam through optical isolator 2 is reflected by the first speculum 3-1; The folded light beam of the first speculum 3-1 forms light beam through rotation liquid crystal polarizer 4; This light beam is incident to polarization beam apparatus 5, and through the polarization beam splitting of polarization beam apparatus 5, light beam is divided into two parts; The folded light beam that a part is reflected is received by the optical detection termination of the first beam dump 6-1; Another part light beam is incident to first condenser lens 8 through half-wave plate 7, and the outgoing beam of this first condenser lens 8 is incident to the second speculum 3-2 and reflects, and the folded light beam of the second speculum 3-2 is again after the 3rd speculum 3-3 reflection; Be incident to frequency multiplication generator lbo crystal 10; Light beam is behind frequency multiplication generator lbo crystal 10 conversion wavelength, and wavelength becomes 532nm by 1064nm, and the light beam behind the conversion wavelength is incident to dichronic mirror 11; The light beam that is mingled in the 1064nm in the wavelength 532nm light beam is after dichronic mirror 11 reflections; Folded light beam is received by the optical detection termination of the second beam dump 6-2, and wavelength to be the light beam of 532nm be incident to diaphragm 12 through dichronic mirror 11, the outgoing beam of diaphragm 12 is incident to the 4th speculum 3-4; Folded light beam through the 4th speculum 3-4 reflection is incident to the 5th speculum 3-5 after light beam amplifier module Kepler beam expanding lens 16 expands bundle; The surplus light of a small amount of transmission of warp the 4th speculum 3-4 transmission is received by the optical detection termination of beam profile curvometer 13, and the light beam that is expanded bundle by light beam amplifier module Kepler beam expanding lens 16 is incident to focusing processing camera lens 17 through the 5th speculum 3-5 beam reflected, is used for the workpiece 18 that is fixed on the processing platform 19 is processed through the light beam that focuses on 17 focusing of processing camera lens;
The a small amount of surplus light that reflects from workpiece 18 is by the optical receiving end of micro-imaging CCD assembly 20; Said micro-imaging CCD assembly 20 is used for the process of workpiece 18 is carried out on-line monitoring, the control signal I/O of the control signal input/output terminal connection control system 21 of micro-imaging CCD assembly 20.
In this embodiment; It is the laser beam of 1064nm that the first speculum 3-1, the second speculum 3-2 and the 3rd speculum 3-3 are used to reflect the wavelength that sends in ultrafast picosecond pulse laser source 1; Behind frequency multiplication generator lbo crystal 10; The infrared laser beam of 1064nm becomes the green glow that wavelength is 532nm, and the 4th speculum 3-4 and the 5th speculum 3-5 are used for the green glow that reflection wavelength is 532nm.
The a small amount of surplus light of penetration mirror 3-4 is received by beam profile curvometer 13, in order to the profile of monitoring light beam.
Control system 21 is mainly used in the control to following element: control ultrafast picosecond pulse laser source 1 startup, close; Rotation liquid crystal polarizer 4 through its angle position of rotation, is regulated the size of exporting energy; Control to frequency multiplication generator lbo crystal 10; Control beam profile curvometer 13 is used to detect the defeated exterior feature of light beam; To the adjustment of processing platform 19, like the speed, acceleration etc. of motion; Control to micro-imaging CCD assembly 20.
The specific embodiment two: this embodiment is described below in conjunction with Fig. 1; This embodiment is further specifying embodiment one; Said light beam amplifier module Kepler beam expanding lens 16 is made up of second condenser lens 14 and the 3rd condenser lens 15, behind second condenser lens 14 and the 3rd condenser lens 15 expansion bundles, is incident to the 5th speculum 3-5 through the folded light beam that the 4th speculum 3-4 reflects.
The main purpose that light beam amplifier module Kepler beam expanding lens 16 expands bundle is exactly the enlarged diameter light beam, thereby improves the quality of light beam self with follow-up optical element.Among the present invention, the light beam after light beam amplifier module Kepler beam expanding lens 16 expands bundle will adapt with the clear aperture that focuses on processing camera lens 17.
The specific embodiment three: this embodiment is further specifying embodiment two; The focal length of said second condenser lens 14 is 40mm; The focal length of the 3rd condenser lens 15 is 100mm, and the centre distance of second condenser lens 14 and the 3rd condenser lens 15 is 140mm.
The specific embodiment four: this embodiment is further specifying embodiment one, two or three; This embodiment also comprises external amplifier active medium 9; External amplifier active medium 9 is arranged between the 3rd speculum 3-3 and the frequency multiplication generator lbo crystal 10; The 3rd speculum 3-3 beam reflected is incident to external amplifier active medium 9, exports through the light beam of external amplifier active medium 9 amplified energies and is incident to frequency multiplication generator lbo crystal 10; Said external amplifier active medium 9 is Nd:YVO
4Crystal.
This embodiment is the energy for the laser beam that improves 1 output of ultrafast picosecond pulse laser source.
The specific embodiment five: this embodiment is for to the further specifying of embodiment one, two, three or four, and said optical isolator 2 is made up of two polariscopes and faraday's rotary body.
The specific embodiment six: this embodiment is described below in conjunction with Fig. 1 and Fig. 2; This embodiment is that it may further comprise the steps based on the method for the processing ultra-hydrophobicity micro-structure surface of the device of the said ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface of arbitrary embodiment in the embodiment one to five:
Step 1: surface roughness Ra is fixed on processing platform 19Z less than 5 μ m, the depth of parallelism on the surface that guide rail drives less than the steel workpiece 18 of 10 μ m;
Step 2: regulate light path, the focus of the light beam that focuses on 17 focusing of processing camera lens is dropped on the processing stand on workpiece 18 surfaces;
With probe E the surface of workpiece 18 is surveyed, confirmed workpiece 18 and focus on the relative position between the focus of the light beam that processing camera lens 17 focuses on, make process be in burnt machining state;
Step 3: the X through processing platform 19 drives workpiece 18 motions to guide rail and Y to the compound motion of guide rail, produces the relative motion of the focus of the light beam that focuses on said focusing processing camera lens 17, forms the machining locus to workpiece 18 surfaces.
Whole optical path described in this embodiment can be propagated in aluminum pipe, to avoid because the injury that the scattering of light beam in communication process, reflection etc. cause the operator.
To the requirement of workpiece 18 depth of parallelisms, be in the step 1 of this embodiment in order to guarantee in the whole machining process process, all to process in the focal position of the light beam that focuses on 17 focusing of processing camera lens.Requiring workpiece 18 to have more smooth surface, mainly is for the scattering that reduces light beam in actual process, reflection etc., thereby avoids causing the loss of input energy.
In step 1 and step 2, workpiece 18 will remain parallel state with focusing processing camera lens 17, on the initial plane of workpiece 18, processes in process thereby guarantee to focus on the focus of processing camera lens 17 focusing always.
The specific embodiment seven: below in conjunction with Fig. 1 this embodiment is described, this embodiment is for to the further specifying of embodiment six, and the detailed process of the adjusting light path described in the step 2 is:
Ultrafast laser bundle by ultrafast picosecond pulse laser source 1 emission infrared band; After built-in regenerative amplifier amplification; First polariscope by optical isolator 2 produces linearly polarized light beam; This linearly polarized light beam rotates 45 ° by faraday's rotary body of optical isolator 2 then, and second polariscope through optical isolator 2 produces linearly polarized light beam again;
Adjustment half-wave plate 7 and then adjust the angle of its outgoing beam, the light beam that first condenser lens 8 is converged amplifies in external amplifier active medium 9, and the beam diameter after amplifying through external amplifier active medium 9 is less than 1.5mm;
Beam diameter after amplifier module Kepler beam expanding lens 16 expands bundle is 5mm, to be fit to and the clear aperture coupling that focuses on processing camera lens 17.
The specific embodiment eight: this embodiment is further specifying embodiment six or seven; The pulse width of the ultrafast laser bundle of the infrared band of said ultrafast picosecond pulse laser source 1 emission is 8.1ps; Wavelength is 1064nm; Repetition rate is 1-640kHz, and maximum single pulse energy is 100 μ J; The wavelength of light beam is 532nm behind frequency multiplication generator lbo crystal 10 conversion wavelength.
The pulse stability of the ultrafast laser bundle of the infrared band of the said ultrafast picosecond pulse laser of this embodiment source 1 emission is less than 1%rms, beam quality M
2＜1.1.
The ultrafast picosecond pulse laser processing super-hydrophobicity function micro-structural that this embodiment adopts; The high repetition frequency of using reaches 200kHz; Thereby on the unit are that guarantees workpiece 18, absorb after a certain amount of pulse number, can use very high process velocity, like 1000mm/min.This has just improved the working (machining) efficiency of machining functions property micro-structure surface greatly.Thereby reduced the complexity of processing cost and technology.
The specific embodiment nine: this embodiment is further specifying embodiment six, seven or eight; Said processing platform 19 along X to guide rail and Y to guide rail, the movement velocity scope in processing super hydrophobic functional property micro-structure surface process is 100mm/min-1000mm/min.
The movement velocity of processing platform 19 when the movement velocity scope described in this embodiment refers to the processing ultra-hydrophobicity micro-structure.
The specific embodiment ten: this embodiment is described below in conjunction with Fig. 1 to Fig. 5; This embodiment is further specifying embodiment six, seven, eight or nine; Process in the super hydrophobic functional property micro-structural process of the present invention, the focus adjustment scope that focuses on processing camera lens 17 is 50-150mm, and the sweep span between two adjacent machining locus lines is 3-15 μ m; Scanning times in the whole machining process process is 3-10 time, and the power density scope is to be 0.4J/cm
2-2.4J/cm
2
It is that the focal length lenses of 50mm, 70mm, 100mm or 150mm realizes that said focusing processing camera lens 17 can adopt focal length.
The first speculum 3-1, the second speculum 3-2, the 3rd speculum 3-3, the 4th speculum 3-4 and the 5th speculum 3-5 are dielectric mirror among the present invention; Frequency multiplication generator lbo crystal 10 need place the precision temperature control cabinet, and the light beam amplifier module Kepler beam expanding lens of being made up of second condenser lens 14 and the 3rd condenser lens 15 16 is used for light beam is expanded bundle.
Through optical isolator 2, optical isolator 2 can effectively be protected the optical element in the built-in regenerative amplifier can not receive from workpiece 18 and reflect and the external amplifier active medium 9Nd:YVO of process after the ultrafast laser of ultrafast picosecond pulse laser source 1 generation amplified through built-in regenerative amplifier
4The destruction of the light beam after crystal amplifies.Optical isolator 2 is made up of two polariscopes and faraday's rotary body; First polariscope produces linearly polarized photon; The polarization direction of light beam is by 45 ° of faraday's rotary body rotations then; So that for first polariscope, second polariscope can also rotate 45 °, thereby makes light beam can pass optical isolator 2 smoothly.The light beam that reflects from workpiece 18 is polarized by second polariscope, and its polarization direction is by 45 ° of faraday's rotary body rotations, and this just means that light beam is by horizontal polarization.Because two polariscopes are vertical layouts, so light can be eliminated, and also can the optical element in the regenerative amplifier do not damaged by the light that workpiece 18 reflects.
The laser beam of whole optical path of the present invention system is propagated in aluminum pipe; And reflect by the first speculum 3-1, then the quick optical beam power control module of light beam through forming by rotation liquid crystal polarizer 4, polarization beam apparatus 5 and the first beam dump 6-1.Rotation liquid crystal polarizer 4 is aggregates of liquid crystal compensation variable delay device (LCR) and zero level condensate λ/4 wave plate delayers.The combination of these components and parts just can be adjusted the linear polarization of input beam according to voltage that is applied to LCR and the element that separates s and p polarization being used for thereafter.At the output of built-in regenerative amplifier, with orthogonal surface, ground just by linear polarization.Therefore the polarization beam apparatus 5 light beam part that just can reflect by vertical polarization, the light beam of being propagated is then further amplification.All beam energies of built-in regenerative amplifier can be used, because the propagation efficiency of attenuator can be up to 100%.
Subsequently, light beam is adjusted to suitable angle through a half-wave plate 7 and is satisfied when amplifying the requirement to polarization, and is converged and satisfy the optimum condition of in external amplifier active medium 9, amplifying.Placing the second speculum 3-2 and the 3rd speculum 3-3 between first condenser lens 8 and the external amplifier active medium 9 is exactly the adjustment for light beam.Try to achieve the focal length value of first condenser lens 8 through calculating, satisfy the requirement of optimum Match pattern, light beam be through just can reaching intact calibration after the external amplifier active medium 9 like this, and need not follow-up focusing optical element.Beam diameter after the external amplifier active medium 9 of process is less than 1.5mm.Followed by being a frequency multiplication generator lbo crystal 10 after the external amplifier active medium 9, at LBO (three lithium borate L
iB
3O
5) in the crystal, the infrared laser that begins 1064nm most is converted into the green glow of visible 532nm through non-linear process.Because frequency multiplication generator lbo crystal 10 is not strict phase matched in the time of 148.33 ℃, therefore this crystal can be heated at work, and the temperature of this crystal will be by the control of strictness.Frequency multiplication generator lbo crystal 10 is half the devices of light wavelength being reduced to input beam of standard, and it is a heat-sensitive element.Dichronic mirror 11 with one second beam dump 6-2 plays the effect of filtration to the light beam that is still infrared band, and light beam is through diaphragm 12 then, and it can protect Nd:YVO
4Crystal is because the light that reflects from the side probably can destroy this crystal.
Light beam is through placing diaphragm 12 and be sent to light beam amplifier module Kepler beam expanding lens 16 in order to the reflection of the 4th speculum 3-4 between the beam profile curvometer 13 that detects beam profile then, and after expanding bundle, spot diameter can reach 5mm.Select for use this value to be not only, also process the needs of the maximum clear aperture of camera lens 17 in order to adapt to micro-machined focusing for tight focusing.Light beam amplifier module Kepler beam expanding lens 16 is made up of second condenser lens 14 and the 3rd condenser lens 15, and the focal length of last lens is 40mm, and the latter's the focal length of lens is 100mm, and the centre distance between two lens is 140mm.
Finally; The light beam that expands bundle through light beam amplifier module Kepler beam expanding lens 16 arrives after through the 5th speculum 3-5 and focuses on processing camera lens 17 places; Light beam through focusing on can be processed the workpiece 18 that is fixed on the processing platform 19; Simultaneously, the process of whole system can pass to control system 21 through micro-imaging CCD assembly 20 and carry out on-line monitoring, and micro-imaging CCD assembly 20 can also be used for the online observation of auxiliary focal position simultaneously.
Little processing of whole ultrafast laser and light path system are operated by control system 21 and relevant control.
The present invention need not carry out any processing to ganoid workpiece 18 and just can directly process.Workpiece 18 is fixed on the X-Y plane of processing platform 19; The light beam that focuses on 17 focusing of processing camera lens is parallel to guide rail with Z.Workpiece 18 need not any post processing and just can ride in the micro-nano dual structure that material surface forms and make it have super-hydrophobic functional characteristic after the processing of accomplishing ultra-hydrophobicity micro-structure surface.The present invention is applicable to the processing on multiple functional material surface.
Claims (10)
1. the device of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface; It is characterized in that: it comprises ultrafast picosecond pulse laser source (1); Optical isolator (2); First speculum (3-1); Second speculum (3-2); The 3rd speculum (3-3); The 4th speculum (3-4); The 5th speculum (3-5); Rotation liquid crystal polarizer (4); Polarization beam apparatus (5); First beam dump (6-1); Second beam dump (6-2); Half-wave plate (7); First condenser lens (8); Frequency multiplication generator lbo crystal (10); Dichronic mirror (11); Diaphragm (12); Beam profile curvometer (13); Light beam amplifier module Kepler beam expanding lens (16); Focus on processing camera lens (17); Processing platform (19); Micro-imaging CCD assembly (20) and control system (21)
After amplifying, laser beam passes built-in regenerative amplifier in ultrafast picosecond pulse laser source (1) is incident to optical isolator (2); Light beam through optical isolator (2) is reflected by first speculum (3-1); The folded light beam of first speculum (3-1) forms light beam through rotation liquid crystal polarizer (4); This light beam is incident to polarization beam apparatus (5), and the polarization beam splitting through polarization beam apparatus (5), light beam are divided into two parts; The folded light beam that a part is reflected is received by the optical detection termination of first beam dump (6-1); Another part light beam is incident to first condenser lens (8) through half-wave plate (7), and the outgoing beam of this first condenser lens (8) is incident to second speculum (3-2) and reflects, and the folded light beam of second speculum (3-2) is again after the 3rd speculum (3-3) reflection; Be incident to frequency multiplication generator lbo crystal (10); Light beam is behind frequency multiplication generator lbo crystal (10) conversion wavelength, and wavelength becomes 532nm by 1064nm, and the light beam behind the conversion wavelength is incident to dichronic mirror (11); The light beam that is mingled in the 1064nm in the wavelength 532nm light beam is after dichronic mirror (11) reflection; Folded light beam is received by the optical detection termination of second beam dump (6-2), and wavelength to be the light beam of 532nm be incident to diaphragm (12) through dichronic mirror (11), the outgoing beam of diaphragm (12) is incident to the 4th speculum (3-4); Folded light beam through the 4th speculum (3-4) reflection is incident to the 5th speculum (3-5) after light beam amplifier module Kepler beam expanding lens (16) expands bundle; The surplus light of a small amount of transmission of warp the 4th speculum (3-4) transmission is received by the optical detection termination of beam profile curvometer (13), and the light beam that is expanded bundle by light beam amplifier module Kepler beam expanding lens (16) is incident to focusing processing camera lens (17) through the 5th speculum (3-5), is used for the workpiece (18) that is fixed on the processing platform (19) is processed through the light beam that focuses on processing camera lens (17) focusing;
The a small amount of surplus light that reflects from workpiece (18) is received by the optical receiving end of micro-imaging CCD assembly (20); Said micro-imaging CCD assembly (20) is used for the process of workpiece (18) is carried out on-line monitoring, the control signal I/O of the control signal input/output terminal connection control system (21) of micro-imaging CCD assembly (20).
2. the device of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 1; It is characterized in that: said light beam amplifier module Kepler beam expanding lens (16) is made up of second condenser lens (14) and the 3rd condenser lens (15), behind second condenser lens (14) and the 3rd condenser lens (15) expansion bundle, is incident to the 5th speculum (3-5) through the folded light beam that the 4th speculum (3-4) reflects.
3. the device of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 2; It is characterized in that: the focal length of said second condenser lens (14) is 40mm; The focal length of the 3rd condenser lens (15) is 100mm, and the centre distance of second condenser lens (14) and the 3rd condenser lens (15) is 140mm.
4. process the device of ultra-hydrophobicity micro-structure surfaces according to claim 1,2 or 3 described ultrafast picosecond pulse laser; It is characterized in that: it also comprises external amplifier active medium (9); External amplifier active medium (9) is arranged between the 3rd speculum (3-3) and the frequency multiplication generator lbo crystal (10); The 3rd speculum (3-3) beam reflected is incident to external amplifier active medium (9), exports through the light beam of external amplifier active medium (9) amplified energy and is incident to frequency multiplication generator lbo crystal (10); Said external amplifier active medium (9) is Nd:YVO
4Crystal.
5. the device of ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 4, it is characterized in that: said optical isolator (2) is made up of two polariscopes and faraday's rotary body.
6. method based on the processing ultra-hydrophobicity micro-structure surface of the device of the said ultrafast picosecond pulse laser processing of claim 1 ultra-hydrophobicity micro-structure surface, it is characterized in that: it may further comprise the steps:
Step 1: surface roughness Ra is fixed on processing platform (19) Z less than 5 μ m, the depth of parallelism on the surface that guide rail drives less than the steel workpiece (18) of 10 μ m;
Step 2: regulate light path, the focus of the light beam that focuses on processing camera lens (17) focusing is dropped on the processing stand on workpiece (18) surface;
With probe E the surface of workpiece (18) is surveyed, confirmed workpiece (18) and focus on the relative position between the focus of the light beam that processing camera lens (17) focuses on, make process be in burnt machining state;
Step 3: the X through processing platform (19) drives workpiece (18) motion to guide rail and Y to the compound motion of guide rail, and the relative motion that produces the focus of the light beam that focuses on said focusing processing camera lens (17) forms the machining locus to workpiece (18) surface.
7. the method for ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 6, it is characterized in that: the detailed process of the adjusting light path described in the step 2 is:
Ultrafast laser bundle by ultrafast picosecond pulse laser source (1) emission infrared band; After built-in regenerative amplifier amplification; First polariscope by optical isolator (2) produces linearly polarized light beam; This linearly polarized light beam rotates 45 ° by faraday's rotary body of optical isolator (2) then, and second polariscope through optical isolator (2) produces linearly polarized light beam again;
Adjustment half-wave plate (7) and then adjust the angle of its outgoing beam, the light beam that first condenser lens (8) is converged amplifies in external amplifier active medium (9), and the beam diameter after amplifying through external amplifier active medium (9) is less than 1.5mm;
Beam diameter after amplifier module Kepler beam expanding lens (16) expands bundle is 5mm, to be fit to and the clear aperture coupling that focuses on processing camera lens (17).
8. the method for ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 7; It is characterized in that: the pulse width of the ultrafast laser bundle of the infrared band of said ultrafast picosecond pulse laser source (1) emission is 8.1ps; Wavelength is 1064nm; Repetition rate is 1-640kHz, and maximum single pulse energy is 100 μ J; The wavelength of the light beam behind frequency multiplication generator lbo crystal (10) conversion wavelength is 532nm.
9. the method for ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 8; It is characterized in that: said processing platform (19) along X to guide rail and Y to guide rail, the movement velocity scope in processing super hydrophobic functional property micro-structure surface process is 100mm/min-1000mm/min.
10. the method for ultrafast picosecond pulse laser processing ultra-hydrophobicity micro-structure surface according to claim 9; It is characterized in that: in the processing super hydrophobic functional property micro-structural process; The focus adjustment scope of said focusing processing camera lens (17) is 50-150mm; Article two, the sweep span between the adjacent machining locus line is 3-15 μ m, and the scanning times in the whole machining process process is 3-10 time, and the power density scope is 0.4J/cm
2-2.4J/cm
2
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