CN102044836A - Microchip laser capable of tuning output pulse width - Google Patents

Microchip laser capable of tuning output pulse width Download PDF

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CN102044836A
CN102044836A CN 201010529142 CN201010529142A CN102044836A CN 102044836 A CN102044836 A CN 102044836A CN 201010529142 CN201010529142 CN 201010529142 CN 201010529142 A CN201010529142 A CN 201010529142A CN 102044836 A CN102044836 A CN 102044836A
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wavelength
pump light
resonant cavity
passive
light
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吴砺
韩晓明
任策
赵武丽
陈卫民
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Photop Technologies Inc
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Photop Technologies Inc
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Abstract

The invention relates to the field of lasers, in particular to a microchip laser capable of tuning output pulse width. The microchip laser capable of tuning the output pulse width specifically comprises two groups of pumping systems and a microchip resonant cavity, wherein each pumping system at least consists of a pumping light source and an optical coupling element which is used for coupling light output by the pumping light source; the microchip resonant cavity at least consists of an agglutinated laser gain dielectric slice and a passive Q switching chip; the first-wavelength pumping light output by the first group of the pumping system is used for pumping a laser gain dielectric slice in the microchip resonant cavity; the second-wavelength pumping light output by the second group of the pumping system is used for pumping a passive Q switching chip in the microchip resonant cavity; and the initial transmissivity of the passive Q switching chip can be tuned through tuning the light strength of the pumping light of the second wavelength output by the second group of the pumping system. The microchip laser not only is simple in structure, but also does not have various defects which occur in the existing technical scheme.

Description

A kind of micro-slice laser of tunable output pulse width
Technical field
The present invention relates to field of lasers, relate in particular to output pulse width is carried out tuning micro-slice laser, the micro-slice laser structure of the output pulse width of the tuning passive Q-regulaitng laser of more specifically saying so.
Background technology
Along with the development of laser technology, each field is more and more higher to the reliability of laser, through engineering approaches, stability, assembling capacity, multifunctionality, easy to operate requirement.Existing single pulse width laser output can not have been satisfied client's application demand in a lot of occasions.
Realize that at present the tunable scheme of output pulse width mainly contains:
1. outside laserresonator, realize by copped wave;
2. change by the Q impulse of initiatively transferring Q in the adjusting chamber and realize;
3. realize by the SBS pond.
There is following defective respectively in they:
1. first kind of scheme can only make pulsewidth shorten, can not be elongated, and be accompanied by huge energy loss;
2. second kind of scheme needs complicated driving power, improved the complexity of complete machine, reduced reliability, and increased cost;
3. the third scheme requires sieve height to the plated film of each optical element in the chamber, causes self-excitation easily, and when high power work, vibration appears in pulsed operation easily, and pulse output is unstable.
Summary of the invention
At the deficiency that exists in above-mentioned several prior art schemes, the present invention proposes the tunable passive Q-adjusted micro-slice laser of a kind of output pulse width simple in structure.
Technical scheme of the present invention is:
A kind of micro-slice laser of tunable output pulse width, specifically: comprise 2 groups at least by pump light source and pumping system that optical coupling element is formed and 1 microplate resonant cavity of the pump light source output light that is used to be coupled, this microplate resonant cavity comprises the gain medium sheet and the passive Q-adjusted crystal wafer composition of gummed at least; Wherein, the pump light of first wavelength of the 1st group of pumping system output is used for the gain medium sheet in the pump micro-slice resonant cavity, the pump light of second wavelength of the 2nd group of pumping system output is used for the passive Q-adjusted crystal wafer in the pump micro-slice resonant cavity, the light intensity of the pump light of second wavelength by tuning the 2nd group of pumping system output, come the initial transmission of tuning passive Q-adjusted crystal wafer, and then realize the output pulse width of tuning microplate resonant cavity.
Based on above-mentioned principle, it is as follows to propose 3 kinds of concrete laser structures:
First kind of laser structure: the gain medium sheet in the pump light end pumping pump micro-slice resonant cavity of first wavelength of described the 1st group of pumping system output, the passive Q-adjusted crystal wafer in the pump light profile pump microplate resonant cavity of second wavelength of described the 2nd group of pumping system output.
Further, the pump light of first wavelength of described the 1st group of pumping system output can be the light of identical wavelength or the light of different wave length with the pump light of second wavelength of the 2nd group of pumping system output.
Second kind of laser structure: the pump light of second wavelength of the pump light of first wavelength of described the 1st group of pumping system output and the 2nd group of pumping system output closes the described microplate resonant cavity of bundle member end face pumping by an optics, gain medium sheet in the described microplate resonant cavity and passive Q-adjusted crystal wafer be respectively to the pump light peak absorbance of the pump light and second wavelength of first wavelength, and the gain medium sheet in the described microplate resonant cavity does not absorb or weak absorption the pump light of second wavelength.
Preferably, in order to guarantee that 2 groups of pumping systems do not influence each other.The gain medium sheet in the described microplate resonant cavity and the cemented surface of passive Q-adjusted crystal wafer plate high reflecting medium film and the pump light of second wavelength and the anti-reflection deielectric-coating of output light of the pump light of first wavelength.
The third laser structure: the gain medium sheet in the pump light end pumping pump micro-slice resonant cavity of first wavelength of described the 1st group of pumping system output, the pump light of second wavelength of described the 2nd group of pumping system output is by the passive Q-adjusted crystal wafer in the transparent plain film reflection back pumping pump micro-slice resonant cavity that is arranged on the output light path, and this transparent plain film plates the high reflecting medium film and the anti-reflection deielectric-coating of exporting light of the pump light of second wavelength.
Preferably, in order to guarantee that 2 groups of pumping systems do not influence each other.Gain medium sheet in the described microplate resonant cavity and passive Q-adjusted crystal wafer be respectively to the pump light peak absorbance of the pump light and second wavelength of first wavelength, and the gain medium sheet in the described microplate resonant cavity does not absorb or weak absorption the pump light of second wavelength.
Preferably, in order to guarantee that 2 groups of pumping systems do not influence each other.The gain medium sheet in the described microplate resonant cavity and the cemented surface of passive Q-adjusted crystal wafer plate the high reflecting medium film of pump light of the pump light of first wavelength and second wavelength and the anti-reflection deielectric-coating of output light, and the logical light face of another of the cemented surface of passive Q-adjusted crystal wafer plates the pump light of second wavelength and the anti-reflection deielectric-coating of output light.
The present invention adopts technical scheme as above, utilize passive Q-adjusted crystal absorption and another identical or different road pump light of laser medium wavelength in the passive Q-regulaitng laser resonant cavity, can change its transmitance, thereby influence the characteristic of laser output arteries and veins bandwidth and repetition rate, passing through of having a mind to adds the second road pump light and changes passive Q-adjusted crystal transmitance, thereby realizes the purpose of the pulsewidth of active adjustment passive Q-regulaitng laser.The present invention is not only simple in structure, and does not possess the deficiency that exists in several prior art schemes that background technology says.
Description of drawings
Fig. 1 is the structural representation of embodiments of the invention 1;
Fig. 2 is the structural representation of embodiments of the invention 2;
Fig. 3 is the structural representation of embodiments of the invention 3.
Embodiment
Now the present invention is further described with embodiment in conjunction with the accompanying drawings.
Employed passive Q-adjusted crystal has the saturable absorption characteristic in the passive Q-regulaitng laser, and promptly its absorption coefficient is not a constant, but reduces until saturated light to be presented transparent characteristic with the increase of light intensity.This its absorption coefficient of passive Q-adjusted crystal is:
α = α 0 1 + I I s - - - ( 1 )
In the formula, α 0Be the absorption coefficient of light intensity when very little, I sBe the saturated absorption light intensity of crystal, its size is relevant with the kind and the doping content of saturable absorber in the crystal.From (1) formula as can be seen, the transmitance of passive Q-adjusted crystal is relevant with laser intensity on shining it.
The pulse duration of passive Q-regulaitng laser can be expressed as:
w = E P max = t r 2 σl In ( n i n f ) [ n i - n t - n t 0 · In ( n i n t ) - ( n i - n t 0 ) · 1 α [ 1 - ( n t n i ) α ] ] - - - ( 2 )
Wherein
Figure BSA00000329165400043
Figure BSA00000329165400044
By outgoing mirror transmitance R and saturated absorbing body initial transmission T 0Decision.
By noted earlier, the transmitance of saturable absorber is directly proportional with light intensity on shining it, and therefore, we can regulate its initial transmission T by the light intensity that control shines on the passive Q-adjusted crystal 0, and then the output pulse width of control passive Q-regulaitng laser.
Based on above principle, the present invention proposes the adjustable passive Q-regulaitng laser of a kind of pulsewidth.The basic structure of laser proposed by the invention comprises following three kinds of optics at least: two pump light sources, input coupled lens group, passive Q-adjusted laser microplate.What wherein passive Q-adjusted laser microplate was basic is made of laser medium and passive Q-adjusted crystal.Two pump light source output wavelengths are λ 1, λ 2Pump light, through input coupled lens group, respectively laser medium in the passive Q-adjusted laser microplate and passive Q-adjusted crystal are carried out pumping.By regulating the pump light λ of the passive Q-adjusted crystal of pumping 2Light intensity, regulate the initial transmission of passive Q-adjusted crystal, and then regulate the output pulse width of passive Q-regulaitng laser.
Based on above-mentioned principle, the present invention can adopt following 3 kinds of concrete laser example structure:
Embodiment 1:
Consult shown in Figure 1ly, present embodiment comprises: first pump light source 11, output pumping optical wavelength is λ 1, second pump light source 12, output pumping optical wavelength is λ 2, input coupled lens 13,14, passive Q-adjusted laser microplate resonant cavity 15.Wherein, passive Q-adjusted laser microplate resonant cavity 15 constitutes by gain medium 151 and passive Q-adjusted crystal 152 are bonding.The first pump light source 11 pump light λ that exports 1Gain medium 151 by 13 pairs of passive Q-adjusted laser microplate resonant cavitys 15 of input coupled lens carries out pumping; The second pump light source 12 pump light λ that exports 2Passive Q-adjusted crystal 152 by 14 pairs of passive Q-adjusted laser microplate resonant cavitys 15 of input coupled lens carries out pumping.λ 1And λ 2Corresponding with the absworption peak of gain medium 151 and passive Q-adjusted crystal 152 respectively.By controlling the output intensity of second pump light source 12, the initial transmission of the passive Q-adjusted crystal 152 of scalable, and then can regulate the output pulse width of passive Q-regulaitng laser continuously.
Embodiment 2:
Consult shown in Figure 2ly, present embodiment comprises: first pump light source 11, output pumping optical wavelength is λ 1, second pump light source 12, output pumping optical wavelength is λ 2, input coupled lens 13,14,17, bundling device 16 and passive Q-adjusted laser microplate resonant cavity 15.Wherein, passive Q-adjusted laser microplate resonant cavity 15 constitutes by gain medium 151 and passive Q-adjusted crystal 152 are bonding.Pump light λ 1, λ 2Close bundle by bundling device 16, and be coupled in the passive Q-adjusted laser microplate resonant cavity 15 through coupled lens 17.Pump light λ 1And λ 2Corresponding with the absworption peak of gain medium 151 and passive Q-adjusted crystal 152 respectively, and, 151 couples of pump light λ of gain medium 2A little less than not absorbing or absorbing.Preferably, plate λ on the contact-making surface of gain medium 151 and passive Q-adjusted crystal 152 1High reflecting medium film, λ 2With the anti-reflection deielectric-coating of laser output wavelength, influence each other avoiding, efficient is provided.
Embodiment 3:
Consult shown in Figure 3ly, present embodiment comprises: first pump light source 11, output pumping optical wavelength is λ 1, second pump light source 12, output pumping optical wavelength is λ 2, input coupled lens 13,14, transparent plain film 18 and passive Q-adjusted laser microplate resonant cavity 15.Wherein, passive Q-adjusted laser microplate resonant cavity 15 constitutes by gain medium 151 and passive Q-adjusted crystal 152 are bonding, and plating is to λ on the transparent plain film 18 2High-reflecting film and to the anti-reflection film of laser works wavelength.Pump light λ 1Be coupled in the passive Q-adjusted laser microplate resonant cavity 15 pumping laser gain media 151 by coupled lens 13; Pump light λ 2By coupled lens 14 and reflected into by transparent plain film 18 in the passive Q-adjusted crystal 152 of passive Q-adjusted laser microplate resonant cavity 15.Pump light λ 1And λ 2Corresponding with the absworption peak of gain medium 151 and passive Q-adjusted crystal 152 respectively.Preferably, plate λ on the contact-making surface of gain medium 151 and passive Q-adjusted crystal 152 1, λ 2High reflecting medium film and the anti-reflection deielectric-coating of laser output wavelength, another surface plating λ of passive Q-adjusted crystal 152 2Anti-reflection film with laser output wavelength.
Although specifically show and introduced the present invention in conjunction with preferred embodiment; but the those skilled in the art should be understood that; in the spirit and scope of the present invention that do not break away from appended claims and limited; can make various variations to the present invention in the form and details, be protection scope of the present invention.

Claims (9)

1. the micro-slice laser of a tunable output pulse width, it is characterized in that: comprise 2 groups at least by pump light source and pumping system that optical coupling element is formed and 1 microplate resonant cavity of the pump light source output light that is used to be coupled, this microplate resonant cavity comprises the gain medium sheet and the passive Q-adjusted crystal wafer composition of gummed at least; Wherein, the pump light of first wavelength of the 1st group of pumping system output is used for the gain medium sheet in the pump micro-slice resonant cavity, the pump light of second wavelength of the 2nd group of pumping system output is used for the passive Q-adjusted crystal wafer in the pump micro-slice resonant cavity, the light intensity of the pump light of second wavelength by tuning the 2nd group of pumping system output, come the initial transmission of tuning passive Q-adjusted crystal wafer, and then realize the output pulse width of tuning microplate resonant cavity.
2. the micro-slice laser of tunable output pulse width according to claim 1, it is characterized in that: the gain medium sheet in the pump light end pumping pump micro-slice resonant cavity of first wavelength of described the 1st group of pumping system output, the passive Q-adjusted crystal wafer in the pump light profile pump microplate resonant cavity of second wavelength of described the 2nd group of pumping system output.
3. the micro-slice laser of tunable output pulse width according to claim 2 is characterized in that: the pump light of first wavelength of described the 1st group of pumping system output is the light of identical wavelength or the light of different wave length with the pump light of second wavelength of the 2nd group of pumping system output.
4. the micro-slice laser of tunable output pulse width according to claim 1, it is characterized in that: the pump light of second wavelength of the pump light of first wavelength of described the 1st group of pumping system output and the 2nd group of pumping system output closes the described microplate resonant cavity of bundle member end face pumping by an optics, gain medium sheet in the described microplate resonant cavity and passive Q-adjusted crystal wafer be respectively to the pump light peak absorbance of the pump light and second wavelength of first wavelength, and the gain medium sheet in the described microplate resonant cavity does not absorb or weak absorption the pump light of second wavelength.
5. the micro-slice laser of tunable output pulse width according to claim 4 is characterized in that: described optics closes between bundle element and the described microplate resonant cavity and also is provided with an optical coupling lens.
6. the micro-slice laser of tunable output pulse width according to claim 4 is characterized in that: the gain medium sheet in the described microplate resonant cavity and the cemented surface of passive Q-adjusted crystal wafer plate high reflecting medium film and the pump light of second wavelength and the anti-reflection deielectric-coating of output light of the pump light of first wavelength.
7. the micro-slice laser of tunable output pulse width according to claim 1, it is characterized in that: the gain medium sheet in the pump light end pumping pump micro-slice resonant cavity of first wavelength of described the 1st group of pumping system output, the pump light of second wavelength of described the 2nd group of pumping system output is by the passive Q-adjusted crystal wafer in the transparent plain film reflection back pumping pump micro-slice resonant cavity that is arranged on the output light path, and this transparent plain film plates the high reflecting medium film and the anti-reflection deielectric-coating of exporting light of the pump light of second wavelength.
8. the micro-slice laser of tunable output pulse width according to claim 7, it is characterized in that: gain medium sheet in the described microplate resonant cavity and passive Q-adjusted crystal wafer be respectively to the pump light peak absorbance of the pump light and second wavelength of first wavelength, and the gain medium sheet in the described microplate resonant cavity does not absorb or weak absorption the pump light of second wavelength.
9. the micro-slice laser of tunable output pulse width according to claim 7, it is characterized in that: the gain medium sheet in the described microplate resonant cavity and the cemented surface of passive Q-adjusted crystal wafer plate the high reflecting medium film of pump light of the pump light of first wavelength and second wavelength and the anti-reflection deielectric-coating of output light, and the logical light face of another of the cemented surface of passive Q-adjusted crystal wafer plates the pump light of second wavelength and the anti-reflection deielectric-coating of output light.
CN 201010529142 2010-10-28 2010-10-28 Microchip laser capable of tuning output pulse width Pending CN102044836A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102684053A (en) * 2012-05-31 2012-09-19 苏州天弘激光股份有限公司 Passively Q-switched solid laser device for outputting controllable laser parameters
CN112134132A (en) * 2020-08-20 2020-12-25 南京光宝光电科技有限公司 Human eye safe laser based on bonding technology and divergence optimization method
CN113572010A (en) * 2020-04-29 2021-10-29 上海禾赛科技有限公司 Laser, lidar comprising same and method for generating laser light

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358394A (en) * 2000-06-15 2001-12-26 Toshiba Corp Q switch solid laser oscillation method and its device
US20050226280A1 (en) * 2004-04-08 2005-10-13 Kalin Spariosu Modulated saturable absorber controlled laser

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358394A (en) * 2000-06-15 2001-12-26 Toshiba Corp Q switch solid laser oscillation method and its device
US20050226280A1 (en) * 2004-04-08 2005-10-13 Kalin Spariosu Modulated saturable absorber controlled laser

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102684053A (en) * 2012-05-31 2012-09-19 苏州天弘激光股份有限公司 Passively Q-switched solid laser device for outputting controllable laser parameters
CN113572010A (en) * 2020-04-29 2021-10-29 上海禾赛科技有限公司 Laser, lidar comprising same and method for generating laser light
CN113572010B (en) * 2020-04-29 2022-09-23 上海禾赛科技有限公司 Laser, lidar comprising same and method for generating laser light
CN112134132A (en) * 2020-08-20 2020-12-25 南京光宝光电科技有限公司 Human eye safe laser based on bonding technology and divergence optimization method

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Application publication date: 20110504