CN103036137A - Method for generating subnanosecond mode-locked pulse laser with high stability and low repetition frequency - Google Patents
Method for generating subnanosecond mode-locked pulse laser with high stability and low repetition frequency Download PDFInfo
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- CN103036137A CN103036137A CN2012105943188A CN201210594318A CN103036137A CN 103036137 A CN103036137 A CN 103036137A CN 2012105943188 A CN2012105943188 A CN 2012105943188A CN 201210594318 A CN201210594318 A CN 201210594318A CN 103036137 A CN103036137 A CN 103036137A
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Abstract
The invention provides a method for generating subnanosecond mode-locked pulse laser with high stability and low repetition frequency. By using an active electro-optical Q switched-saturable absorber GaAs passive mode-locking double-loss modulation technology, in combination with parameter optimization design of prism resonant cavity, the repetition rates of active and passive double Q switched mode-locking lasers depend on the repetition rate of active electro-optical modulation; a mode-locking pulse in a Q switched envelope depends on active modulation and passive saturable absorption; and according to selection of a laser medium, a small signal transmission rate of a saturable absorber, a repetition rate of an active modulator, a cavity parameter and a pumping power, the width of the Q switched envelope is less than the round-strip time of the laser; each Q switched envelope has only one mode-locking pulse oscillation; and the repetition rate of the mode-locking pulse is equal to the repetition rate of several KHz of the active electro-optical modulation. The method for generating the subnanosecond mode-locked pulse laser with high stability and low repetition frequency, provided by the invention, has the advantages of low pulse repetition rate and high stability; the width of the pulse is the subnanosecond width of the mode-locking pulse in the Q switched envelop; and the pulse also obtains high peak power.
Description
Technical field
The present invention relates to a kind of method that adopts main passive pair of loss modulation technique generation high stable, low-repetition-frequency, subnanosecond pulse laser, belong to laser technology field.
Background technology
Pulse duration in all solid state short-pulse laser, repetition rate, stability, peak power are several very important indexs.High stability and high-peak power are the necessary conditions that short-pulse laser is used; Pulse duration and repetition rate have determined time and the dynamic process of light-matter interaction, and low repeatability not only improves the peak power of pulse, and can increase the scope of lifetime measurement in such as fluorescence lifetime measurement.Fig. 1 has shown four kinds of different operating conditions of common laser, comprises continuously (CW), transfers Q (Q-switching), continuous locking mold (CW mode-locking), Q-switch and mode-locking (Q-switching andmode-locking).
In general, continuous locking mold laser can produce the pulse of psec (ps) and femtosecond (fs) level, and it is long that the repetition rate of pulse depends on the chamber, in MHz ~ GHz magnitude; By increasing long 100m and the 3.8Km of arriving in chamber, repetition rate minimum in passive mode locking laser and passive mode locking optical-fiber laser can only arrive 1.5MHz and 77KHz, but the long increase in chamber makes Optical Maser System complicated undoubtedly, and is difficult to obtain the repetition rate of several KHz.Initiatively Q-switch laser can produce the pulse of several nanoseconds to tens nanoseconds, and the repetition rate of pulse is the kHz magnitude, and can regulate and control; Passively Q switched laser can produce the pulse of nanosecond, and the pulse duration of microplate passively Q switched laser can be too narrow to the subnanosecond level, but the repetition rate of the single pulse energy of passively Q switched laser and pulse is all unstable; Q-regulating technique is difficult to obtain the pulse laser of high stability, high-peak power.Q-switch and mode-locking is between the dynamic process of transferring between Q and the continuous locking mold, transfer the pulsewidth of Q envelope all identical with Q-switch laser with repetition rate, transferring the pulsewidth of the mode locking pulse under the Q envelope is the subnanosecond level, its repetition rate is identical with continuous locking mold, peak power is higher than Q-switch laser and continuous locking mold laser pulse, but transfer the mode locking pulse string number under the Q envelope numerous, single pulse energy outwards reduces successively from the envelope center, less stable.Therefore, single continuous locking mold, transfer Q or Q-switch and mode-locking technology, all be difficult to obtain the subnanosecond level Mode-locked laser of low repetition (a few KHz), high stability, high-peak power.
Two loss modulation are that two kinds of similar and different loss modulation are combined, and put into simultaneously a resonant cavity.Can be divided into again two initiatively loss modulation, main-passive pair loss modulation, two passive loss modulation according to different combinations.Two active loss modulation as active electric light (acousto-optic) and active acousto-optic (electric light) combine, main-passive pair loss modulation as active electric light (acousto-optic) and saturated absorbing body (Cr
4+: YAG, GaAs, SESAM etc.) Passive intake combines, and two passive losses modulation are such as saturated absorbing body (Cr
4+: YAG, GaAs, SESAM etc.) Passive intake and saturated absorbing body (Cr
4+: YAG, GaAs, SESAM etc.) Passive intake combines.Compare with the laser of partial loss consumption modulation, the laser of two loss modulation enough produces narrower pulse duration, higher peak power, more stable pulse.Theoretical and experimental result shows, two Q-switch lasers can produce narrower pulse duration, more symmetrical waveform, higher peak power than dull Q laser, main passive and two passive continuous locking mold laser can produce more stable mode locking pulse, and two Q-switch and mode-locking laser peak powers increase substantially, stability strengthens greatly.As everyone knows, initiatively loss transfers the short-pulse laser repetition rate of Q generation to stablize, be easy to control, and the saturated absorbing body passive mode locking is simple in structure, cheap.Therefore, main-passive pair loss modulation can utilize the characteristics of two kinds of loss modulation, produces the ideal Modulated pulse that the modulation of partial loss consumption is difficult to obtain, extremely people's favor.
Summary of the invention
The problem of the subnanosecond level Mode-locked laser that the present invention is directed to existing single continuous locking mold, being difficult to of transferring that Q or Q-switch and mode-locking technology exist obtains low repetition, high stability, high-peak power provides a kind of method that can produce high stable, low-repetition-frequency, subnanosecond Mode-locked laser based on two loss modulation techniques.
The present invention produces the method for high stable, low-repetition-frequency, subnanosecond Mode-locked laser, is:
The two loss modulation techniques that adopt the electric-optically Q-switched-GaAs saturated absorbing body passive mode locking of active to combine are put into resonant cavity simultaneously with electrooptic modulator and GaAs saturated absorbing body, make the laser of vibration in the resonant cavity be two Q-switch and mode-locking laser operations; Described resonant cavity is three v-shaped cavities that the chamber mirror consists of, three chamber mirrors are the first total reflection concave mirror, the second total reflection concave mirror and flat output mirror, be provided with successively active medium, the polarizer, electrooptic modulator and quarter-wave plate between the first total reflection concave mirror and the second total reflection concave mirror, the repetition rate of electrooptic modulator is selected low repetition 1KHz; GaAs saturated absorbing body small-signal transmitance is 92.6%; The GaAs saturated absorbing body places the flat output mirror place, to obtain minimum oscillating laser spot radius; Adjust the parameter of resonant cavity: the radius of curvature of the first total reflection concave mirror and the second total reflection concave mirror and distance L between the two
1, the second completely reflecting mirror M
2And the distance L between the flat output mirror
2And the transmitance of flat output mirror, make the repetition rate of two Q-switch and mode-locking laser depend on electrooptic modulator repetition rate, transfer the mode locking pulse in the Q envelope to depend on electrooptic modulator and the passive saturated absorption of GaAs; Owing to transfer the time interval of adjacent two mode locking pulses in the Q envelope to equal the time that oscillating laser comes and goes in the chamber, the width of accent Q envelope has determined to transfer the number of locked mode impulse hunting in the Q envelope, according to active medium, saturated absorbing body small-signal transmitance, the repetition rate of electrooptic modulator, the parameter of resonant cavity and the selection of pump power, make the width of transferring the Q envelope less than the two-way time of laser in resonant cavity, make each transfer the Q envelope to only have a mode locking pulse vibration, the repetition rate of mode locking pulse equals the initiatively repetition rate of electrooptic modulation, can the generation high stable, low-repetition-frequency, the subnanosecond Mode-locked laser.
The following condition of resonant cavity Optimal Parameters foundation:
(1) the electrooptic modulator repetition rate is lower, transfers Q profiled pulses width narrower;
(2) GaAs saturated absorbing body small-signal transmitance is larger, transfers the repetition rate of Q envelope larger during the Q-switch and mode-locking running;
(3) resonant cavity is longer, and the longitudinal mode number that participates in laser generation is more, realize easily the mode-locked laser running, and the time interval of adjacent two locked modes is longer, but the pulsewidth of long intonation Q envelope is wider;
(4) the less spot radius in the GaAs saturated absorbing body place absorption that easily reaches capacity, but spot intensity needs less than damage threshold;
(5) owing to transfer the time interval of adjacent two mode locking pulses in the Q envelope to equal the time that oscillating laser comes and goes in the chamber, transfer Q profiled pulses width narrower, each transfers the mode locking pulse number of vibration in the Q envelope fewer.
The purpose that the optimal cavity parameter reaches:
(1) laser of vibration is two Q-switch and mode-locking laser operations in the resonant cavity, and the repetition rate of two Q-switch and mode-locking laser depends on the repetition rate of active electrooptic modulation, the mode locking pulse in the accent Q envelope depends on initiatively electrooptic modulation and the passive saturated absorption of GaAs.
(2) under certain pump power, the width of transferring the Q envelope is less than the two-way time of laser in the chamber, guarantees that each transfers Q envelope to only have a mode locking pulse vibration.
(3) each transfers the Q envelope to only have a mode locking pulse running to realize two Q-switch and mode-locking laser, and the repetition rate of mode locking pulse equals the initiatively repetition rate of electrooptic modulation, and pulse duration is the subnanosecond level.
The present invention utilizes the low repeatability of active electrooptic modulation and the pulse duration of high stability and the passive Q-adjusted locked mode subnanosecond of saturated absorbing body, the running of this pulse laser has salient feature, the repetition rate of pulse equals the repetition rate 1kHz of electric light, not only repetition rate is low, and has high stability; The width of pulse is the subnanosecond level for the width of transferring mode locking pulse in the Q envelope, and has high-peak power.
Description of drawings
Fig. 1 is the different operating condition schematic diagrames of four kinds of common laser.Comprise continuously (CW), transfer Q (Q-switching), continuous locking mold (CW mode-locking), Q-switch and mode-locking (Q-switching andmode-locking).
Fig. 2 is the schematic diagram of three mirror resonator devices of the present invention.
Fig. 3 transfers the pulse duration of Q envelope with the variation relation schematic diagram of pump power.
Fig. 4 is that the interior locked mode pulse number of the accent Q envelope of oscillograph recording is with the variation relation figure of pump power.
Fig. 5 transfers the interior locked mode pulse duration of Q envelope with the variation relation schematic diagram of pump power.
Fig. 6 is that the pump power of oscillograph recording is 7.09W subnanosecond mode locking pulse sequence schematic diagram.
Embodiment
The present invention adopts initiatively two loss modulation techniques of electric-optically Q-switched-saturated absorbing body GaAs passive mode locking, utilize the electrooptic modulation switching speed fast, transfer the Q pulse width, the characteristics of stable performance, GaAs saturated absorbing body light injury threshold height and single photon, two-photon, the advantage that free carrier saturated absorption passive mode locking is easy to control, electrooptic modulator and GaAs saturated absorbing body are put into resonant cavity simultaneously, make the laser that vibrates in the resonant cavity be two Q-switch and mode-locking laser operations by resonant cavity, and according to the resonant parameter optimal design, make the repetition rate of two Q-switch and mode-locking laser depend on the initiatively repetition rate of electrooptic modulation, transfer the mode locking pulse in the Q envelope to depend on initiatively electrooptic modulation and the passive saturated absorption of GaAs.Owing to transfer the time interval of adjacent two mode locking pulses in the Q envelope to equal the time that oscillating laser comes and goes in the chamber, the width of accent Q envelope has determined to transfer the number of locked mode impulse hunting in the Q envelope, according to active medium, saturated absorbing body small-signal transmitance, the initiatively selection of modulator repetition rate, chamber parameter, pump power, make the width of transferring the Q envelope less than the two-way time of laser in the chamber, guarantee that each accent Q envelope only has a mode locking pulse vibration, the repetition rate of mode locking pulse equals the initiatively repetition rate of electrooptic modulation, and pulse duration is the subnanosecond level.
The present invention adopts three mirror resonator devices shown in Figure 2, three chamber mirrors are the first total reflection concave mirror, the second total reflection concave mirror and flat output mirror, are provided with successively laser crystal (active medium), the polarizer (polarizer), electric light (EO) modulator and quarter-wave plate between the first total reflection concave mirror and the second total reflection concave mirror.The radius of curvature of the first completely reflecting mirror is 150mm, and the radius of curvature of the second completely reflecting mirror is 500mm, and the transmitance of flat output mirror is 6.5%.Laser crystal (as laser medium) is bonding crystal YVO
4/ Nd:YVO
4, adopt the bonding crystal can reduce thermal effect.Distance L between the first completely reflecting mirror and the second completely reflecting mirror
1Be 600mm, the distance L between the second completely reflecting mirror and the flat output mirror
2Be 460mm.
Adopt laser diode as pumping source, laser diode and the first total reflection concave mirror M
1Between two convex lens are set.Fiber coupling system, pump light focus in the active medium (laser crystal), and spot radius and the resonator mode of pump light are complementary after focusing on.Electrooptic modulator is as the active modulation loss, and electrooptic crystal is bbo crystal, and the repetition rate of electrooptic modulator is repetition rate 1kHz.GaAs places flat output mirror M as passive saturated absorbing body
3The place is to obtain minimum oscillating laser spot radius.GaAs saturated absorbing body small-signal transmitance is 92.6%.According to resonator parameter, theoretical according to abcd matrix, the spot radius 128-135 micron at the GaAs saturated absorbing body place after the optimization.The threshold power 0.9W-1W of laser, in a single day pump light surpasses threshold power, just can obtain stable two Q-switch and mode-locking laser, and it transfers the repetition rate of Q envelope to equal the repetition rate 1kHz of electrooptic modulation, it is long that the repetition rate of the interior mode locking pulse of accent Q envelope depends on resonant cavity, is 114MHz.
The pulse duration of two Q-switch and mode-locking laser Q-switching envelopes can be measured with storage oscilloscope, and Fig. 3 shows that pulsewidth is with the variation relation of pump power.Fig. 3 shows, pulsewidth is with the increase of pump power narrow down (with the increase of pump power, transferring the pulse duration of Q envelope to reduce).Because transfer the time interval of adjacent two mode locking pulses in the Q envelope to equal the time 7ns that oscillating laser comes and goes in the chamber, the width of accent Q envelope has determined to transfer the number of locked mode impulse hunting in the Q envelope.Pulsewidth narrows down and means that each mode locking pulse number of transferring vibration in the Q envelope reduces.When the width of transferring the Q envelope during less than the two-way time of laser in the chamber, each transfers Q envelope to only have a mode locking pulse vibration, and the repetition rate of mode locking pulse equals the initiatively 1KHz repetition rate of electrooptic modulation, and pulse duration is the subnanosecond level.In this case, low repetition, high stable, subnanosecond mode locking pulse can produce.Among Fig. 3, when pump power is 4.65W, the time that the pulse duration of accent Q envelope comes and goes in the chamber less than oscillating laser, each transfers the Q envelope to only have a mode locking pulse, its repetition rate is 1KHz, pulse duration is the subnanosecond level, has obtained low-repetition-frequency, subnanosecond, high stable, mode-locked laser pulse.
Fig. 4 has shown that the locked mode pulse number is with the oscillograph recording figure of the variation of pump power in the typical Q of the accent envelope.Wherein the pump power of (a) is 2.75W, transfers the mode locking pulse that 10 vibrations are arranged in the Q envelope approximately for one; (b) pump power is 4.03W, transfers the mode locking pulse that 4 vibrations are arranged in the Q envelope approximately for one, (c) and pump power (d) be respectively 4.65W, 7.09W, each transfers Q envelope to only have a mode locking pulse running.Fig. 4 shows, when pump power greater than 4.65W, can realize monolock mould laser operation (each transfers Q envelope to only have a mode locking pulse running).
Fig. 5 shows four pump power mode locking pulse kymographion kymograms among Fig. 4.Wherein, pump power 2.75W (a), pump power 4.03W (b), pump power 4.65W (c), pump power 7.09W (d).This figure shows that the locked mode pulsewidth narrows down with the increase of pump power.When pump power was 7.09W, the locked mode pulsewidth was 580ps.
Fig. 6 has shown that the pump power of oscillograph recording is 7.09W subnanosecond mode locking pulse sequence schematic diagram, and Fig. 6 shows that the repetition rate of pulse is low repetition 1kHz, and the amplitude of mode locking pulse is highly stable.
Claims (1)
1. method that produces high stable, low-repetition-frequency, subnanosecond Mode-locked laser is characterized in that:
The two loss modulation techniques that adopt the electric-optically Q-switched-GaAs saturated absorbing body passive mode locking of active to combine are put into resonant cavity simultaneously with electrooptic modulator and GaAs saturated absorbing body, make the laser of vibration in the resonant cavity be two Q-switch and mode-locking laser operations; Described resonant cavity is three v-shaped cavities that the chamber mirror consists of, three chamber mirrors are the first total reflection concave mirror, the second total reflection concave mirror and flat output mirror, be provided with successively active medium, the polarizer, electrooptic modulator and quarter-wave plate between the first total reflection concave mirror and the second total reflection concave mirror, the repetition rate of electrooptic modulator is selected low repetition 1KHz; GaAs saturated absorbing body small-signal transmitance is 92.6%; The GaAs saturated absorbing body places the flat output mirror place, to obtain minimum oscillating laser spot radius; Adjust the parameter of resonant cavity: the radius of curvature of the first total reflection concave mirror and the second total reflection concave mirror and distance L between the two
1, the second completely reflecting mirror M
2And the distance L between the flat output mirror
2And the transmitance of flat output mirror, make the repetition rate of two Q-switch and mode-locking laser depend on electrooptic modulator repetition rate, transfer the mode locking pulse in the Q envelope to depend on electrooptic modulator and the passive saturated absorption of GaAs; Owing to transfer the time interval of adjacent two mode locking pulses in the Q envelope to equal the time that oscillating laser comes and goes in the chamber, the width of accent Q envelope has determined to transfer the number of locked mode impulse hunting in the Q envelope, according to active medium, saturated absorbing body small-signal transmitance, the repetition rate of electrooptic modulator, the parameter of resonant cavity and the selection of pump power, make the width of transferring the Q envelope less than the two-way time of laser in resonant cavity, make each transfer the Q envelope to only have a mode locking pulse vibration, the repetition rate of mode locking pulse equals the initiatively repetition rate of electrooptic modulation, can the generation high stable, low-repetition-frequency, the subnanosecond Mode-locked laser.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103500921A (en) * | 2013-10-22 | 2014-01-08 | 山东大学 | Low-repetition frequency and high-stability subnanosecond pulsed green laser generator |
| CN104393474A (en) * | 2014-12-02 | 2015-03-04 | 大族激光科技产业集团股份有限公司 | Narrow-pulse-width laser device |
| CN108448377A (en) * | 2018-02-12 | 2018-08-24 | 山东大学 | 2 μm of nanosecoud pulse lasers of the electric-optically Q-switched big energy of boost type and manufacturing method |
| CN108767642A (en) * | 2018-03-08 | 2018-11-06 | 上海交通大学 | The method for generating low repetition high energy pulse from mode-locked laser |
| CN108767634A (en) * | 2018-08-24 | 2018-11-06 | 南京罗默激光科技有限公司 | A kind of subnanosecond green (light) laser |
| CN110932069A (en) * | 2019-05-09 | 2020-03-27 | 长春理工大学 | Ultrahigh repetition frequency narrow pulse single-wavelength alternate Q-switched laser output method and laser |
| CN115473116A (en) * | 2022-08-19 | 2022-12-13 | 山西大学 | Pulse laser space shaping device and method based on non-uniform saturable absorber |
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2012
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103500921A (en) * | 2013-10-22 | 2014-01-08 | 山东大学 | Low-repetition frequency and high-stability subnanosecond pulsed green laser generator |
| CN104393474A (en) * | 2014-12-02 | 2015-03-04 | 大族激光科技产业集团股份有限公司 | Narrow-pulse-width laser device |
| CN108448377A (en) * | 2018-02-12 | 2018-08-24 | 山东大学 | 2 μm of nanosecoud pulse lasers of the electric-optically Q-switched big energy of boost type and manufacturing method |
| CN108767642A (en) * | 2018-03-08 | 2018-11-06 | 上海交通大学 | The method for generating low repetition high energy pulse from mode-locked laser |
| CN108767642B (en) * | 2018-03-08 | 2020-09-15 | 上海交通大学 | Method for generating low-repetition-frequency high-energy pulse from mode-locked laser |
| CN108767634A (en) * | 2018-08-24 | 2018-11-06 | 南京罗默激光科技有限公司 | A kind of subnanosecond green (light) laser |
| CN110932069A (en) * | 2019-05-09 | 2020-03-27 | 长春理工大学 | Ultrahigh repetition frequency narrow pulse single-wavelength alternate Q-switched laser output method and laser |
| CN110932069B (en) * | 2019-05-09 | 2021-04-13 | 长春理工大学 | Ultrahigh repetition frequency narrow pulse single-wavelength alternate Q-switched laser output method and laser |
| CN115473116A (en) * | 2022-08-19 | 2022-12-13 | 山西大学 | Pulse laser space shaping device and method based on non-uniform saturable absorber |
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Application publication date: 20130410 |