CN111769433B - glass/Co for increasing Er, Yb2+:MgAl2O4Method for outputting energy by laser - Google Patents

glass/Co for increasing Er, Yb2+:MgAl2O4Method for outputting energy by laser Download PDF

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CN111769433B
CN111769433B CN202010540146.0A CN202010540146A CN111769433B CN 111769433 B CN111769433 B CN 111769433B CN 202010540146 A CN202010540146 A CN 202010540146A CN 111769433 B CN111769433 B CN 111769433B
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laser
crystal
mgal
switched
glass
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CN111769433A (en
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李强
惠勇凌
方子君
李国泰
朱占达
雷訇
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Beijing University of Technology
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Beijing University of Technology
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
    • H01S3/16—Solid materials
    • H01S3/17—Solid materials amorphous, e.g. glass

Abstract

The invention belongs to the field of solid lasers. glass/Co for increasing Er, Yb2+:MgAl2O4The method for outputting energy by laser adopts 110 on the premise of not changing the pump, gain medium parameter, laser resonant cavity structure and size parameter of the laser]Co of cutting direction2+:MgAl2O4As a passive Q-switched crystal, the anisotropic saturable absorption characteristic is utilized to select the polarization direction of the pump light and [110 ]]Cutting of Co2+:MgAl2O4Of crystalline [001 ]]The output laser pulse energy can be increased at an optimum angle (90 ° or 270) of the crystal axis direction angle.

Description

glass/Co for increasing Er, Yb2+:MgAl2O4Method for outputting energy by laser
Technical Field
The invention relates to a method for using end-pumped erbium glass (Er, Yb: glass) gain medium of semiconductor (LD), cobalt-doped spinel (Co)2+:MgAl2O4) A laser of passively Q-switched crystal belongs to the field of solid lasers.
Background
The laser using Er, Yb: glass as the gain medium can emit laser light around 1.5 μm. The light of the wave band is in the 'eye-safe wavelength', and the exposure allowed to the eyes is high; in the 'atmospheric window', the penetration capability to smoke and fog is particularly strong, and the laser wavelength becomes important in the field of laser ranging. Er, Yb glass/Co pumped by LD2+:MgAl2O4The passive Q-switched laser has a simple structure, small volume and convenient carrying, and has wide application requirements in laser ranging.
People adopt Co2+:MgAl2O4The saturable absorption characteristic of the passive Q-switched crystal is utilized. Co2+:MgAl2O4Due to the characteristics of the crystal structure, the material has anisotropic saturable absorption characteristics. Co existing at present2+:MgAl2O4Anisotropy of crystalIn the study of saturable absorption characteristics of (1), there is only one report of the national university of technology of Russia in 2007 on [001 ]]Oriented Co2+:MgAl2O4The transmittance curve and absorption cross section of the crystal were measured, and it was considered that the polarized light was along the crystal [001 ]]When propagating in the direction, the transmittance shows four maxima and minima during 360-degree rotation of polarized light, showing anisotropic characteristics (Y.V.Volk, A.M.Malyarvich, K.V.Yumashev, V.N.Matrosov, T.A.Matrosov, and M.I. Kupchenko, Anisocopy of nonliner Absorption in Co2+:MgAl2O4Crystal, appl. Phys.B,2007,88, 443-7.). In addition, up to now, there is no [110 ] at home and abroad]Co of cutting direction2+:MgAl2O4The saturable absorption characteristics of the crystal and related reports of application researches thereof.
The invention provides a method for increasing Er, Yb glass/Co2+:MgAl2O4A method of outputting energy from a laser. The parameters of a passive Q-switched crystal Co are changed without changing the parameters of a laser pump and a gain medium2+:MgAl2O4Further increasing the output laser pulse energy.
Disclosure of Invention
The invention aims to provide a method for simply and efficiently improving Er, Yb: glass/Co2+:MgAl2O4The method for passively adjusting the output energy of the Q laser further improves the output laser pulse energy on the premise of not changing the parameters of a pump and a gain medium of the laser and the structure and the size parameters of a laser resonant cavity.
In order to achieve the purpose, the technical scheme of the invention adopts 110]Cut Co2+:MgAl2O4The crystal is used as a passive Q-switched crystal of Er, Yb glass laser, and the polarization direction of pump light and [110 ] are selected by utilizing the anisotropic saturable absorption characteristic]Cutting of Co2+:MgAl2O4Crystal [001 ]]The optimal angle of the included angle of the crystal axis direction obtains large pulse laser energy output.
The specific scheme is described as follows:
increase the glas of Er and Ybs/Co2+:MgAl2O4The method for outputting energy by the laser comprises a pumping source 1, a focusing lens 2 for focusing pumping light, a coupling input mirror or laser cavity mirror 3, an Er, Yb, glass gain medium 4, a passive Q-switched crystal 5 and a laser coupling output mirror 6. The structure is as shown in figure 1; the passively Q-switched crystal adopts [110 ]]Cut Co2+:MgAl2O4。
The pump source is a linear polarization semiconductor laser, and the fast axis is collimated.
The focusing lens is a plano-convex lens and is used for focusing the pump light.
The coupling input mirror is a laser cavity mirror, and is plated with a pumping light antireflection film and an oscillation light total reflection film.
The Er, Yb and glass gain medium is erbium and ytterbium co-doped phosphate glass and has a block structure, two ends of the block structure are plated with pumping light and oscillation light antireflection films, and the side surfaces of the block structure are wrapped by indium and placed on a water cooling heat sink.
The passively Q-switched crystal is [110 ]]Cut Co2+:MgAl2O4. Define alpha as the polarization direction of the pump light and [110 ]]Cutting of Co2+:MgAl2O4Crystal [001 ]]The angle of the crystal axis direction is shown in FIG. 2. When the passive Q-switched crystal is taken as an axis along the cutting direction, rotate [110 ]]The cut passive Q-switched crystal changes the included angle between the crystal axis of the crystal and the polarization direction of the pumping light, determines one direction of the passive Q-switched crystal, namely alpha is 90 degrees or 270 degrees (the same polarization direction), and can further improve Er, Yb: glass/Co2+:MgAl2O4The passively Q-switched laser outputs energy. Over a 360 ° range, the output Q-switched pulse laser energy varies with angle, as in fig. 3, while the output pulse width and beam quality are substantially unchanged.
The coupling output mirror is plated with an oscillation light semi-transparent semi-reflective film.
Compared with the prior art, the invention has the following beneficial effects.
The prior art generally only mixes Co2+:MgAl2O4The crystals being saturable absorbing crystals, generally having random cutting directions, e.g. [111 ]]And (6) cutting. The invention is provided withUsing [110 ]]The cut passive Q-switched crystal adopts 111 on the premise of not changing the parameters of a laser pump, a gain medium and the structure and the size parameters of a laser resonant cavity]The pulse output energy of the cut crystal is improved by about 35 percent.
Based on the existing literature (Y.V.Volk, A.M.Malyarvich, K.V.Yumashev, V.N.Matrosov, T.A.Matrosov, and M.I.Kupchenko, Anisotopy of nonliner Absorption in Co2+:MgAl2O4Crystal, Appl. Phys.B,2007,88, 443-7.) report [001]Cut Co2+:MgAl2O4The crystal anisotropy saturates the absorption characteristics and the application is accordingly envisaged. By using [001 ]]Cut Co2+:MgAl2O4The crystal outputs Q-switched pulse laser energy which changes with the angle within the range of 360 degrees, as shown in figure 4. The invention adopts [110 ]]The cut passive Q-switched crystal adopts [001 ] than the cut passive Q-switched crystal on the premise of not changing the parameters of a laser pump, a gain medium and the structure and the size parameters of a laser resonant cavity]The pulse output energy of the cut crystal is improved by about 10 percent.
Drawings
FIG. 1 shows Er, Yb: glass/Co2+:MgAl2O4Passive Q-switched laser structure schematic diagram.
Labeled as: 1. a pump source; 2. a focusing lens; 3. an input mirror is coupled; 4. er, Yb, glass gain medium; 5. a passively Q-switched crystal; 6. a coupling output mirror; 7 outputting laser.
FIG. 2 is [110 ]]Cut Co2+:MgAl2O4Crystal and pump light polarization direction.
FIG. 3 is [110 ]]Cut Co2+:MgAl2O4The crystal and Er, Yb and glass form a passive Q-switched laser, and the output energy follows Co2+:MgAl2O4Curve of change of the angle of rotation.
FIG. 4 shows [001 ]]Cut Co2+:MgAl2O4The crystal and Er, Yb and glass form a passive Q-switched laser, and the output energy follows Co2+:MgAl2O4Curve of change of the angle of rotation.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The present invention will be further illustrated with reference to the following examples, but the present invention is not limited to the following examples.
Er,Yb:glass/Co2+:MgAl2O4The structure of the passive Q-switched laser is shown in figure 1, a monotube semiconductor laser with power of 8W and central wavelength of 940nm is used as a pumping source 1, output laser of the monotube semiconductor laser is linearly polarized light, a fast axis of the monotube semiconductor laser is collimated by a micro lens, pumping pulse width is 6ms, and repetition frequency is 3 Hz. The pump light is focused by a focusing lens 2 with a focal length f of 5mm, the focusing diameter of the focusing lens is about 0.2mm, and the beam waist length is about 0.4 mm. The coupling input mirror 3 and the coupling output mirror 6 are laser cavity mirrors, the length of a geometric cavity is about 8mm, the length of a physical cavity is about 10mm, the coupling input mirror 3 is plated with a 940nm antireflection film and a 1535nm total reflection film, and the coupling output mirror 6 is plated with a film with 20% of 1535nm transmittance. The gain medium 4 is 1 wt% Er and 21 wt% Yb co-doped phosphate glass with the size of 3mm multiplied by 5mm, anti-reflection films with the sizes of 940nm and 1535nm are plated at two ends, the side surfaces of the gain medium are wrapped by indium and placed on a water cooling heat sink, and the temperature of cooling water is 23 ℃. [110]Cut Co2+:MgAl2O4After the passive Q-switched crystal 5 is processed, the initial transmittance is T80%, and both light-transmitting surfaces of the crystal are plated with anti-reflection films of 1535 nm. When the output direction of the polarized laser of the single-tube semiconductor laser pumping source is equal to [110 ]]Cutting of Co2+:MgAl2O4Crystal [001 ]]When the crystal axis direction forms an included angle of 90 degrees or 270 degrees, the maximum Q-switched pulse energy output by the laser is about 260 mu J, the pulse width is 5.5ns, and the beam quality M is2Is 1.76.
In the above structure, only the passively Q-switched crystal 5 is replaced by [001 ]]Cut Co2+:MgAl2O4The initial transmittance of the crystal is T80%, and both light-passing surfaces of the crystal are plated with anti-reflection films of 1535 nm. When the pump source polarization laser output direction of the single-tube semiconductor laser is equal to [100 ]]Cutting of Co2+:MgAl2O4Crystal [001 ]]When the crystal axis direction forms an included angle of 45 degrees, 135 degrees, 225 degrees and 315 degrees (wherein, 45 degrees and 225 degrees have the same polarization direction; 135 degrees and 315 degrees have the same polarization direction), the maximum Q-switched pulse energy output by the laser is about 240 mu J, the pulse width is 5.6ns, and the beam quality M is2Is 1.76.
Also in the above structure, only the passively Q-switched crystal 5 is replaced by [111 ]]Cut Co2+:MgAl2O4The initial transmittance of the crystal is T80%, and both light-passing surfaces of the crystal are plated with anti-reflection films of 1535 nm. When the pump source of the single-tube semiconductor laser polarizes the laser output direction and [111 ]]Cutting of Co2+:MgAl2O4Crystal [001 ]]When the crystal axis direction forms included angles of 30 degrees, 90 degrees, 150 degrees, 210 degrees, 270 degrees and 330 degrees, the maximum Q-switched pulse energy output by the laser is about 195 mu J, the pulse width is 5.9ns, and the beam quality M is2Is 1.78.
From the above implementation results, use [110 ]]Cut Co2+:MgAl2O4The crystal is used as a passive Q-switched crystal of an Er, Yb glass laser, and large pulse laser energy output is obtained by utilizing the anisotropic saturable absorption characteristic of the crystal. On the premise of not changing the pump of the laser, the parameters of a gain medium and the structure and the size parameters of a laser resonant cavity, the method adopts 100]Cut Co2+:MgAl2O4Crystal, pulse output energy is improved by about 10%; than using [111 ]]Cut Co2+:MgAl2O4And the pulse output energy of the crystal is improved by about 35%.

Claims (4)

1. glass/Co for increasing Er, Yb2+:MgAl2O4The method for outputting energy by the laser is characterized in that: using [110 ]]Cut Co2+:MgAl2O4The passive Q-switched crystal and the gain medium Er, Yb and glass form a passive Q-switched laser;
adopted [110]Cut Co2+:MgAl2O4The placement position of the crystal has special requirements, and specifically comprises the following steps: define alpha as the polarization direction of the pump light and [110 ]]Cutting of Co2+:MgAl2O4Crystal [001 ]]The included angle of the crystal axis direction; using the passively Q-switched crystal as an axis along the cutting direction to rotate [110 ]]Passively cut Q-switched crystal with crystal axis changed [001 ]]The included angle between the pump light and the polarization direction of the pump light is 90 degrees or 270 degrees in the same polarization direction alpha, so that Er, Yb, glass/Co can be improved2+:MgAl2O4Passive Q-switched laser output pulseAnd (4) impact energy.
2. Er, Yb glass/Co2+:MgAl2O4Passively Q-switched laser, its characterized in that: the laser is obtained based on the method of claim 1, and comprises a pumping source, a focusing lens for focusing pumping light, and a coupling input mirror, an Er, Yb, glass gain medium, a passive Q-switched crystal and a coupling output mirror arranged behind the focusing lens; the passively Q-switched crystal adopts [110 ]]Co of cutting direction2+:MgAl2O4。
3. A passively Q-switched laser according to claim 2, characterized in that: the pump source is a linearly polarized semiconductor laser and collimates the fast axis.
4. A passively Q-switched laser according to claim 2, characterized in that: the coupling input mirror and the coupling output mirror are laser cavity mirrors, the coupling input mirror is plated with a pumping light anti-reflection film and an oscillation light total reflection film, and the coupling output mirror is plated with an oscillation light semi-transmission semi-reflection film.
CN202010540146.0A 2020-06-12 2020-06-12 glass/Co for increasing Er, Yb2+:MgAl2O4Method for outputting energy by laser Active CN111769433B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859841A (en) * 2009-04-07 2010-10-13 璨扬投资有限公司 Light-emitting diode (LED)
CN102570276A (en) * 2012-01-09 2012-07-11 北京工业大学 Preparation method of quasi-phase matching crystals for improving CO2 laser frequency multiplication efficiency
CN103414101A (en) * 2013-08-14 2013-11-27 北京工业大学 Method and device for improving output characteristic of Nd:YAG passively-Q-switched laser
CN109407353A (en) * 2018-11-28 2019-03-01 深圳大学 Polarization independent type orbital angular momentum modulator and preparation method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014055087A (en) * 2012-09-13 2014-03-27 Panasonic Corp Method for producing graphene and transistor using the graphene

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101859841A (en) * 2009-04-07 2010-10-13 璨扬投资有限公司 Light-emitting diode (LED)
CN102570276A (en) * 2012-01-09 2012-07-11 北京工业大学 Preparation method of quasi-phase matching crystals for improving CO2 laser frequency multiplication efficiency
CN103414101A (en) * 2013-08-14 2013-11-27 北京工业大学 Method and device for improving output characteristic of Nd:YAG passively-Q-switched laser
CN109407353A (en) * 2018-11-28 2019-03-01 深圳大学 Polarization independent type orbital angular momentum modulator and preparation method thereof

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