CN219917893U - Solid laser with bias selection function - Google Patents
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- CN219917893U CN219917893U CN202321258450.1U CN202321258450U CN219917893U CN 219917893 U CN219917893 U CN 219917893U CN 202321258450 U CN202321258450 U CN 202321258450U CN 219917893 U CN219917893 U CN 219917893U
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Abstract
The utility model discloses a solid laser with bias selection function, which comprises Sm, gdCA 4 O(BO 3 ) 3 Polarizing wafer, laser generating device, and laserThe generating device is adjacent to the resonant cavity, and a laser crystal and the polarizing wafer are arranged in the resonant cavity; the laser generating device emits pumping light to irradiate the polarized wafer through the laser with 1020-1130 nm of the laser crystal generation wave band in the resonant cavity, and polarized light in a specific direction is output through the polarized wafer; based on Sm GdCA 4 O(BO 3 ) 3 The polarizing lens of the material controls the laser with the diameter of 1 mu m to oscillate, so that the problems of large optical loss and short service life caused by the beam-splitting prism are avoided while the selective output of linear polarization is realized, and the polarizing lens does not need to be obliquely placed, thereby being beneficial to saving the space in the cavity of the resonant cavity.
Description
Technical Field
The utility model relates to the technical field of lasers, in particular to a solid laser with a polarization selection function.
Background
The linear polarization laser has wide application in photoelectric detection, spectral measurement, photon entanglement, information processing, storage and the like. As an important means of broadening the laser wavelength, nonlinear optical frequency conversion has special requirements for polarization characteristics of fundamental frequency light, and only lasers along a specific linear polarization direction can achieve efficient conversion. Unfortunately, some important laser crystals are isotropic (e.g., nd: YAG) and the emitted laser light is not single linearly polarized, so some means is required to turn it into single linearly polarized light prior to application. In addition, for anisotropic laser crystals, the gain factor, polarization state and wavelength of the excited laser will all change with the crystal direction, which brings about two inconveniences: (1) When the emission cross sections of two laser wavelengths with orthogonal polarization states are similar, the lasers tend to vibrate at the same time under a slightly high pumping power, and single-polarization and single-wavelength lasers are difficult to obtain. For example, nd-YAP crystals, the c-polarized emission peak is at 1065nm and the b-polarized emission peak is at 1079nm, which are often output at the same time and cannot be used independently. (2) When the emission cross sections of two laser wavelengths with orthogonal polarization states are greatly different, polarized laser light with a smaller emission cross section cannot be excited and output even under high pumping power, so that the corresponding wavelength cannot be utilized. Such as Nd: YVO 4 The crystal has a c polarization emission peak at 1064nm and a b polarization emission peak at 1067nm, and for a-cut crystals commonly used by people, the output of the b polarization 1067nm with a smaller emission section is difficult to obtain in reality. Although c-cut crystals can partially solve this problem, the 1067nm output obtained is not single linearly polarized. Therefore, in either case, it is necessary toThe polarization of the laser is controlled by a simple and flexible means, which has important significance for fully utilizing the characteristic difference of the polarization spectrum of the laser crystal, enriching the laser wavelength and realizing the special application of the laser.
The schemes currently in common use for intracavity control of laser polarization can be broadly divided into two categories. One type is to place a polarization beam splitter prism in a laser cavity, and utilize the screening action of the prism on polarized light beams to make the laser energy with one polarization direction oscillate in the cavity and form output. The method has high cost, large size and large optical loss, and the front and the rear parts of the beam-splitting prism are easy to open after being heated, so the service life is limited. The other is to put glass sheets in the laser cavity at Brewster angle, and the method can play a role in selecting bias, but the glass sheets which are obliquely put greatly increase the size of the resonant cavity, so that the method is not suitable for miniaturized and high-integration laser devices. Secondly, the output power is very sensitive to the placement angle of the glass sheets, so that higher requirements on the assembly precision are set. Furthermore, the brewster angles of different laser wavelengths are also different, further increasing the difficulty of assembly. Fourth, the glass sheet has a low thermal conductivity, which is far smaller than that of the crystal optical element, and is unfavorable for the stable operation of high-power laser.
Therefore, how to provide a solid-state laser with a bias selection function, which can avoid the limitations of two types of lasers in the prior art, is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present utility model provides a solid laser with polarization selection function based on Sm: gdCA 4 O(BO 3 ) 3 The polarization lens of the material controls the laser with the diameter of 1 mu m to oscillate, so that the problems of large optical loss and short service life caused by a beam-splitting prism are avoided while the selective output of linear polarization is realized, and the polarization lens does not need to be obliquely placed like a Brewster glass, thereby being beneficial to saving the space in a cavity of a resonant cavity.
In order to achieve the above purpose, the present utility model adopts the following technical scheme:
a solid laser with bias selection function comprises Sm, gdCA 4 O(BO 3 ) 3 The laser device comprises a polarizing wafer, a laser generating device and a resonant cavity adjacent to the laser generating device, wherein the laser crystal and the polarizing wafer are arranged in the resonant cavity; the laser generating device emits pumping light to irradiate the polarized wafer through the laser crystal in the resonant cavity, and polarized light in a specific direction is output through the polarized wafer.
Further, sm in the polarizing wafer 3+ The concentration is 1-50at.%.
Further, the light transmitting direction of the polarizing wafer is along the refractive index principal axis Nz.
Further, the light passing surface of the polarized wafer is polished, and the light passing thickness is 0.1-20mm.
Further, the light-transmitting surface of the polarizing wafer is plated with an antireflection film with a wave band of 1020-1130 nm.
Further, the laser generating device comprises a pumping source and a focusing system, the resonant cavity comprises an incident mirror and an emergent mirror, and the incident mirror is plated with an antireflection film for pumping light and a high reflection film of 1.05-1.1 mu m; the emergent lens is plated with a part of the transmission dielectric film with the wave band of 1.05-1.1 mu m, and the transmission rate of the part of the transmission dielectric film in the wave band of 1.064 mu m is 5%.
Furthermore, an intracavity frequency doubling crystal is also arranged in the resonant cavity and is used for doubling the frequency of the laser after the polarization selection and outputting continuous frequency doubling laser.
Further, the exit mirror is plated with a 1.06 μm high reflection film and a 0.53 μm antireflection film to replace part of the transmission dielectric film.
Furthermore, a Q-switch is arranged in the resonant cavity and is positioned behind the polarization selection element and used for modulating and generating pulse laser.
Further, after the resonant cavity, a convex lens, an extra-cavity frequency doubling crystal and a filter are sequentially arranged adjacent to the resonant cavity along an optical path, pulse laser is focused by the convex lens and then is used as fundamental frequency light to be incident into the extra-cavity frequency doubling crystal meeting the phase matching condition, and after residual fundamental frequency light is filtered by the filter, the frequency doubling light emitted from the extra-cavity frequency doubling crystal is output as pure pulse frequency doubling light.
The utility model has the beneficial effects that:
compared with the prior art, the utility model overcomes the defects of the traditional intracavity polarization-selecting optical element, and has the advantages of low manufacturing cost, small size, small optical loss, integrated design without glue and long service life compared with a polarization splitting prism. Compared with glass sheets placed at Brewster angles, the glass sheets are small in size, easy to integrate, easy to assemble, plug and play, insensitive to angle change, rotary bias selection, high in heat conductivity and stable in high-power operation. The Sm-GdCOB crystal can be grown by a Czochralski method, has the advantages of high growth speed, short period, low cost of the polarizing element, stable property, high polarization degree, easiness in processing, easiness in mass production and easiness in popularization. In addition to the advantages, as shown in figure 3, the Sm/GdCOB crystal shows obvious polarization absorption anisotropy in a wider band (1020-1130 nm) near 1 μm, so that the intracavity polarization selecting element is suitable for various laser materials, laser wavelengths and even broadband lasers, and has very important and wide application prospect.
Drawings
In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present utility model, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a plot of the optical principal axis and crystallographic axis of a oriented Sm: gdCOB crystal according to the utility model;
FIG. 2 is a diagram of the N of the present utility model Z Tangential Sm: gdCOB bias element processing diagram;
FIG. 3 is a plot of the polarization transmission spectrum of a 3at.% 1mm thick Sm: gdCOB crystal;
fig. 4 is a structural diagram of a solid-state laser according to an embodiment of the present utility model;
FIG. 5 is a schematic diagram of an intracavity frequency doubled solid state laser according to another embodiment of the present utility model;
FIG. 6 is a schematic diagram of an extra-cavity frequency doubling solid laser according to another embodiment of the present utility model;
the device comprises a 1-pumping source, a 2-focusing system, a 3-incident mirror, a 4-laser crystal, a 5-polarization selection element, a 6-emergent mirror, a 7-Q-switch, an 8-convex lens, a 9-frequency doubling crystal, a 10-optical filter and an 11-frequency doubling output cavity mirror.
Detailed Description
The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Example 1
The embodiment of the utility model discloses a processing method of a bias selection element, as shown in fig. 1 and 2, the element material is Sm and GdCA 4 O(BO 3 ) 3 Crystals along principal axis N Z The wafer is processed in the direction to have a certain thickness.
Specifically, an X-ray orientation instrument is adopted for Sm, gdCA 4 O(BO 3 ) 3 Crystallographic axis orientation of the crystals; orientation of Sm GdCA with a polarizing microscope 4 O(BO 3 ) 3 Obtaining the included angle between the crystallographic axis and the optical principal axis, and obtaining (a, N) Z )＝26.7°，(c,N X ) =15.4°, crystallographic axis b and optical principal axis N Y Reverse, optical principal axis N X ,N Y ,N Z Following the right hand spiral rule, as shown in fig. 1; along Sm, gdCA 4 O(BO 3 ) 3 Crystal optical principal axis N Z The wafer is processed in the direction to produce polarizing elements, and the normal directions of the side surfaces of the polarizing elements are respectively N X And N Y 。
Example 2
As shown in FIG. 2 and FIG. 3, the embodiment of the utility model discloses a bias selection element which comprises Sm, gdCA 4 O(BO 3 ) 3 Polarizing wafer, polarizerThe vibrating chip is used for receiving laser with wave band of 1020-1130 nm for polarization selection. In the 1 μm band, the transmittance of Sm: gdCOB crystals for different linearly polarized light varies greatly (T NX <<T NZ <T NY ). Thus, along N Z Directional processed wafer device with two linear polarization directions N in its cross section X 、N Y Has the maximum transmittance difference and is for N Y The linearly polarized light in the direction is not substantially absorbed. Based on the unique property, the element is placed in the resonant cavity of the solid laser with the wavelength of 1 mu m, which can play a role of polarization selection, so that the polarization of the output laser is only along N with larger transmittance Y Direction. The utility model has the advantages of low production cost, convenient processing, small size, high polarization degree, easy adjustment, easy popularization and the like.
In one embodiment, sm is a Sm of GdCOB crystal 3+ The concentration is 1-50at%, and the thickness of the wafer in the light passing direction is 0.1-20mm. Preferably, the two light-transmitting surfaces of the wafer are plated with an antireflection film with a wave band of 1 μm so as to reduce the overall loss in the cavity, reduce the pumping threshold and improve the conversion efficiency.
Example 3
The embodiment of the utility model discloses a solid laser with a bias selection function, the structure of which is shown in figure 4 and comprises Sm, gdCA 4 O(BO 3 ) 3 The laser device comprises a polarizing wafer, a laser generating device and a resonant cavity adjacent to the laser generating device, wherein the laser crystal and the polarizing wafer are arranged in the resonant cavity; the laser generating device emits pumping light, laser with wavelength in 1020-1130 nm wave band is generated by the laser crystal in the resonant cavity and irradiates the polarizing wafer, and polarized light with specific direction is output by the polarizing wafer. Wherein, sm, gdCA 4 O(BO 3 ) 3 The polarizing wafer may be replaced with the polarization selecting element in embodiment 2.
In one embodiment, the laser generating device comprises a pump source and a focusing system, the resonant cavity comprises an incident mirror and an emergent mirror, and the incident mirror is plated with an antireflection film for pump light and a high reflection film of 1.05-1.1 mu m; the emergent lens is plated with a part of the transmission dielectric film with the wave band of 1.05-1.1 mu m, and the transmission rate of the part of the transmission dielectric film in the wave band of 1.064 mu m is 5%.
Specifically, the pump source 1, the pump focusing system 2, the incident mirror 3, the laser crystal 4, the Sm, the GdCOB polarization selection element 5 and the emergent mirror 6 are sequentially arranged to form a concave-flat resonant cavity, and the wavelength of laser emitted by the pump source 1 is 808nm. The beam compression ratio of the focusing system 2 is 1:1. The incident mirror 3 is coated with an antireflection film for pump light and a high reflection film of 1.06 μm. The laser crystal 4 is Nd 3+ Doped 0.5at.% and 3×3×10mm in size 3 Is coated with 1.06 mu m antireflection film at two ends. The polarization selecting element 5 is Sm 3+ Sm: gdCOB wafer at concentration of 3at.% tangential to N Z The size is 3×3×1mm 3 And (5) double-sided polishing. The exit mirror 6 is coated with a dielectric film that is partially transparent to the 1.05-1.1 μm wavelength band, and has a transmittance of 5% at 1.064 μm.
When the laser crystal 4 is [111 ]]When the Nd-YAG crystal is tangential, the pump light emitted by the pump source 1 is incident into the Nd-YAG crystal 4 through the focusing system 2 to generate laser oscillation and amplification, and polarization edge Sm-GdCOB wafer N is realized through the polarization selection of the element 5 Y The laser output in the direction of 1064 nm.
When the laser crystal 4 is an X-cut Nd-LYSO crystal, the pump light emitted by the pump source 1 is incident into the Nd-LYSO crystal 4 through the focusing system 2 to generate laser oscillation and amplification, and polarization is selected through the element 5 to realize the polarization along Sm-GdCOB wafer N Y Directional laser output. Select the bias component N Y When the direction is coincident with the Z axis of the laser crystal, the output laser wavelength is 1076nm and 1080nm. Select the bias component N Y When the direction is coincident with the Y axis of the laser crystal, the output laser wavelength is 1069nm and 1076nm.
When the laser crystal 4 is Y-cut Nd-LYSO crystal, the pump light emitted by the pump source 1 is incident into the Nd-LYSO crystal 4 through the focusing system 2 to generate laser oscillation and amplification, and polarization is selected by the element 5 to realize the polarization along Sm-GdCOB wafer N Y Directional laser output. Select the bias component N Y When the direction is coincident with the Z axis of the laser crystal, the output laser wavelength is 1076nm and 1080nm. Select the bias component N Y When the direction is coincident with the X-axis of the laser crystal, the output laser wavelength is 1060nm and 1080nm.
When the laser crystal 4 is a Z-cut Nd: LYSO crystal, the pump source 1 emits a pumpLight is incident into an Nd: LYSO crystal 4 through a focusing system 2 to generate laser oscillation and amplification, and polarization is selected by an element 5 to realize a polarization along Sm: gdCOB wafer N Y Directional laser output. Select the bias component N Y When the direction is coincident with the Y axis of the laser crystal, the output laser wavelength is 1076nm. Select the bias component N Y When the direction is coincident with the X axis of the laser crystal, the output laser wavelength is 1061nm, 1076nm and 1080nm.
In another embodiment, an intracavity frequency doubling crystal is further arranged in the resonant cavity and is used for doubling the frequency of the laser after the polarization selection and outputting continuous frequency doubling laser. The exit mirror is coated with a 1.06 μm high reflection film, a 0.53 μm antireflection film to replace part of the transmission dielectric film.
Specifically, the laser structure is shown in fig. 5. The pumping source 1, the pumping focusing system 2, the incidence mirror 3, the laser crystal 4 and the Sm: gdCOB polarization selection element 5, the frequency doubling crystal 9 and the frequency doubling output cavity mirror 11 are sequentially arranged along the light path: the laser wavelength emitted by the pump source 1 is 808nm. The beam compression ratio of the focusing system 2 is 1:1. The incidence mirror 3 is coated with an antireflection film for pump light and a high reflection film of 1.06 μm and 0.53 μm. The laser crystal 4 is [111 ]]Tangential, 0.5at.%, 3×3×10mm 3 YAG crystal, and antireflection films of 1.06 μm and 0.53 μm are coated at both ends. The polarization selecting element 5 is Sm 3+ Sm: gdCOB wafer at concentration of 3at.% tangential to N Z The size is 3×3×1mm 3 And (5) double-sided polishing. The frequency doubling crystal 9 satisfies the phase matching condition and may be LBO, or YCOB, BIBO. The frequency doubling output cavity mirror 11 is plated with a high reflection film of 1.06 mu m and an antireflection film of 0.53 mu m. The pumping light emitted by the pumping source 1 is incident into the Nd-YAG crystal 4 through the focusing system 2, laser oscillation and amplification of 1064nm are generated, and continuous frequency multiplication light is output from the cavity mirror 11 through frequency multiplication of the frequency multiplication crystal 9 through the polarization selection of the element 5.
In another embodiment, a Q-switch is further disposed in the resonant cavity, and the Q-switch is located behind the polarization selecting element and is used for modulating and generating pulse laser. After the resonant cavity, a convex lens, an extra-cavity frequency doubling crystal and a filter are arranged adjacent to the resonant cavity in sequence along an optical path, pulse laser is focused by the convex lens and then is used as fundamental frequency light to be incident into the extra-cavity frequency doubling crystal meeting the phase matching condition, and after residual fundamental frequency light is filtered by the filter, the pure pulse frequency doubling light is output.
Specifically, the laser structure is shown in fig. 6. The pump source 1, the pump focusing system 2, the incidence mirror 3, the laser crystal 4 and the Sm are sequentially arranged along a light path, and the device is characterized in that: the laser wavelength emitted by the pump source 1 is 808nm. The beam compression ratio of the focusing system 2 is 1:1. The incident mirror 3 is coated with an antireflection film for pump light and a high reflection film of 1.06 μm. The laser crystal 4 is [111 ]]Tangential, 0.5at.%, 3×3×10mm 3 YAG crystal, and 1.06 μm antireflection films are plated at both ends. The polarization selecting element 5 is Sm 3+ Sm: gdCOB wafer at concentration of 3at.% tangential to N Z The size is 3×3×1mm 3 And (5) double-sided polishing. The Q-switch 7 is an active or passive pulse wave modulator, such as an electro-optical Q-switch, an acousto-optic Q-switch, a passive Q-switch made of a crystal or two-dimensional material having saturable absorption properties, or the like. The exit mirror 6 is coated with a dielectric film that is partially transparent to the 1.05-1.1 μm wavelength band, and has a transmittance of 5% at 1.064 μm. When the pump light emitted by the pump source 1 is incident into the Nd-YAG crystal 4 through the focusing system 2 to generate laser oscillation and amplification, the polarization edge Sm-GdCOB wafer N is realized through the modulation of the Q-switch 7 by the polarization selection of the element 5 Y A 1064nm pulse laser output in the direction. After being focused by the convex lens 8, the output laser is used as fundamental frequency light to be incident into the frequency doubling crystal 9 meeting the phase matching condition, and after the residual fundamental frequency light is filtered by the filter 10, the output laser outputs pure 532nm pulse light.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present utility model. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present utility model is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A solid laser with bias selection function is characterized by comprising Sm, gdCA 4 O(BO 3 ) 3 The laser device comprises a polarizing wafer, a laser generating device and a resonant cavity adjacent to the laser generating device, wherein the laser crystal and the polarizing wafer are arranged in the resonant cavity; the laser generating device emits pumping light to irradiate the polarized wafer through the laser crystal in the resonant cavity, and polarized light in a specific direction is output through the polarized wafer.
2. The solid state laser with polarization selection function according to claim 1, wherein Sm in the polarizing wafer 3+ The concentration is 1-50at.%.
3. The solid laser with polarization selection function according to claim 1, wherein the light passing direction of the polarized wafer is along the refractive index principal axis Nz, the light passing surface is polished, and the light passing thickness is 0.1-20mm.
4. The solid laser with polarization selection function according to claim 3, wherein the light-transmitting surface of the polarizing wafer is coated with an antireflection film in a wavelength band of 1020-1130 nm.
5. The solid laser with polarization selection function according to claim 1, wherein the laser generating device comprises a pump source and a focusing system, the resonant cavity comprises an incident mirror and an emergent mirror, and the incident mirror is coated with an antireflection film for pump light and a high reflection film of 1.05-1.1 μm; the emergent lens is plated with a part of the transmission dielectric film with the wave band of 1.05-1.1 mu m, and the transmission rate of the part of the transmission dielectric film in the wave band of 1.064 mu m is 5%.
6. The solid laser with polarization selection function according to claim 1, wherein an intracavity frequency doubling crystal is further arranged in the resonant cavity and is used for doubling the frequency of the laser after polarization selection and outputting continuous frequency doubling laser.
7. The solid state laser with polarization selection function according to claim 6, wherein the exit mirror is coated with a 1.06 μm high reflection film and a 0.53 μm antireflection film to replace part of the transmission dielectric film.
8. The solid state laser of claim 1, wherein a Q-switch is further disposed in the cavity, the Q-switch being located after the polarization selection element for modulating the pulsed laser.
9. The solid laser with polarization selection function according to claim 8, wherein after the resonant cavity, a convex lens, an extra-cavity frequency doubling crystal and a filter are sequentially arranged adjacent to the resonant cavity along the optical path, the pulse laser is focused by the convex lens and then is used as the fundamental frequency light to be incident into the extra-cavity frequency doubling crystal meeting the phase matching condition, and the frequency doubling light emitted from the extra-cavity frequency doubling crystal is filtered by the filter to remove the residual fundamental frequency light, so as to output pure pulse frequency doubling light.
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