CN108666860A - A kind of semiconductor saturable absorbing mirror structure with strain compensation - Google Patents
A kind of semiconductor saturable absorbing mirror structure with strain compensation Download PDFInfo
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- CN108666860A CN108666860A CN201810848549.4A CN201810848549A CN108666860A CN 108666860 A CN108666860 A CN 108666860A CN 201810848549 A CN201810848549 A CN 201810848549A CN 108666860 A CN108666860 A CN 108666860A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 210000004276 hyalin Anatomy 0.000 claims abstract description 25
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 18
- 239000006096 absorbing agent Substances 0.000 claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 6
- 238000013461 design Methods 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 230000001186 cumulative effect Effects 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000006378 damage Effects 0.000 description 11
- 230000009102 absorption Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000013307 optical fiber Substances 0.000 description 4
- 208000027418 Wounds and injury Diseases 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 208000014674 injury Diseases 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001208 nuclear magnetic resonance pulse sequence Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The semiconductor saturable absorbing mirror structure with strain compensation that the invention discloses a kind of, this case saturable absorber uses 8 quantum well structures, convenient for constituting 8 standing wave cycles, and each Quantum Well uses AlGaAsP strain compensation layers, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers, the symmetrical arrangement of AlGaAsP strain compensation layers, it is convenient for the peak position for making each Quantum Well be located at standing wave and is convenient for strain compensation, deformation caused by reducing cumulative stress, be conducive to improve the service life of SESAM, to improve laser life-span, reduce laser maintenance cost.
Description
Technical field
The semiconductor saturable absorbing mirror structure with strain compensation that the present invention relates to a kind of.
Background technology
Currently, ultrafast laser is with its high-peak power, narrow pulse width, in the fine micro Process of material, LED scribings, too
The fields such as positive energy photovoltaic, scientific research are widely used.Relative to nanosecond laser, the material processed using ultrafast laser
Material has many advantages, such as that precision is high, heat-affected zone is minimum, processing edge impulse- free robustness, and the ultrafast of mainstream swashs on industrial market at present
Light device is all based on the laser with active-passive lock mould of SESAM, including solid and optical fiber class picosecond laser it is most of use SESAM into
Row mode locking.In the technical solution of seed source, the seed source technology of solid is replaced to itself have using optical fiber technology many excellent
Point is more considered the effective ways that can resist environment transformation in optical fiber technology using the laser of full polarization fibre.
So state-of-the-art technology is to make full polarization fibre laser using saturable absorber mode-locking technique at present.However such as
The saturable absorptions elements such as semiconductor saturable absorber, carbon nanotube saturable absorber, graphene saturable absorber are all
The shortcomings that decaying there are low damage threshold and with the time.How to improve the service life of SESAM mode-locked lasers is exactly industrial lasers
The real problem in one, boundary.
Since nineteen ninety-two, the laser with active-passive lock mould based on semiconductor saturable absorbing mirror have it is wider theoretical and
Experimental study, Primary Component of the saturable absorbing mirror as mode-locked laser, since the very small spot area of its intracavitary need to be held
By very high peak power density, lens surface plated film and absorbed layer is caused to be easy to be broken, therefore saturable absorbing mirror
Performance and used life also directly determine laser performance and used life, how to extend the saturable absorbing mirror service life, carry
Its damage threshold is risen, the problem that many laser manufacturers solve is become.
It is various that there are many reason of causing SESAM to damage, for example the defects of semiconductor growing process leads to the course of work
In " decalescence point " cause light injury, this light injury either to exist always in low-power or high power.Second of damage
It is primarily generated at the two-photon absorption of saturated absorbing body hyaline layer, rather than the disorder of absorber growth course causes；Solve damage
The key technology of wound is replaced with lower Nonlinear Space interbed first, followed by introduces strain compensation layer.
Relative to solid state laser, it is applied to the saturable absorbing mirror production difficulty bigger of optical fiber laser, because it is needed
The modulation depth higher asked, this means that saturable absorber grows more absorbent layer structures.Under normal circumstances, off-resonance
SESAM have higher saturation flux and damage threshold, and it is close absorption and reflectance factor under have broader wavelength
Range.Off-resonance structure design with multiple Quantum Well saturated absorbing layers, can be used for increasing modulation depth, however, to current
Until, in the case where not influencing crystal quality, strained caused by being mismatched due to the lattice of Quantum Well and adjacent material, it is difficult to
Increase the quantity of Quantum Well under the premise of not influencing crystal quality, this is also the main limitation that high damage threshold is difficult to realize
One of factor.
Therefore, how to overcome above-mentioned defect, it has also become those skilled in the art's important topic urgently to be resolved hurrily.
Invention content
The invention overcomes the shortcomings of the above-mentioned technology and provides a kind of semiconductor saturable absorbing mirror knot with strain compensation
Structure.
To achieve the above object, present invention employs following technical proposals：
A kind of semiconductor saturable absorbing mirror structure with strain compensation, includes n-GaAs substrates, in the n-GaAs
On substrate successively growth have 24 pairs of Bragg mirrors, 8 Quantum Well saturable absorber, wherein each pair of Bragg reflection
The thickness of mirror is 0.25 λ, and λ is design wavelength, and the thickness of each Quantum Well is 0.5 λ, and each pair of Bragg mirror includes successively
GaAs sublayers and AlGaAs sublayers, the thickness of thickness≤AlGaAs sublayers of GaAs sublayers, each Quantum Well includes successively
AlGaAsP strain compensations layer, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers,
AlGaAsP strain compensation layers, wherein the thickness of two AlGaAsP strain compensation layers is equal, the thickness of 3 GaAlAs hyaline layers
Equal, two InGaAs layers of thickness is equal, also, thickness≤AlGaAsP of InGaAs layers of thickness≤GaAlAs hyaline layers
The thickness of strain compensation layer.
A kind of semiconductor saturable absorbing mirror structure with strain compensation as described above, above structure are organic using metal
Chemical vapour deposition technique is grown, wherein the growth temperature of Bragg mirror is 600~750 degrees Celsius, and saturable is inhaled
The growth temperature of acceptor is 500~650 degrees Celsius.
Compared with prior art, the beneficial effects of the invention are as follows：
This case saturable absorber uses 8 quantum well structures, and convenient for constituting 8 standing wave cycles, and each Quantum Well is adopted
With AlGaAsP strain compensations layer, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers,
The symmetrical arrangement of AlGaAsP strain compensation layers, convenient for make each Quantum Well be located at standing wave peak position and be convenient for into
Row strain compensation, deformation caused by reducing cumulative stress are conducive to the service life for improving SESAM, to improve the laser longevity
Life reduces laser maintenance cost.
Description of the drawings
Fig. 1 is the structural schematic diagram of this case.
Fig. 2 is a kind of mode locked fiber laser structure chart.
Fig. 3 is the mode locking pulse sequence diagram obtained when this case saturable absorbing mirror is used in Fig. 2 lasers.
Fig. 4 is the spectrum diagram after the mode locking obtained when this case saturable absorbing mirror is used in Fig. 2 lasers.
Fig. 5 is that the mode locking pulse auto-correlation test value obtained when this case saturable absorbing mirror is used in Fig. 2 lasers shows
Figure.
Fig. 6 is the mode locking output power that is obtained when this case saturable absorbing mirror is used in Fig. 2 lasers with pump power
Variation diagram.
Specific implementation mode
Feature of present invention and other correlated characteristics are described in further detail by the following examples, in order to the same industry
The understanding of technical staff：
As shown in Figure 1, a kind of semiconductor saturable absorbing mirror structure with strain compensation, it is characterised in that include n-
GaAs substrates, on the n-GaAs substrates successively growth have 24 pairs of Bragg mirrors, 8 Quantum Well saturable absorption
Body, wherein the thickness of each pair of Bragg mirror is 0.25 λ, and λ is design wavelength, and the thickness of each Quantum Well is 0.5 λ, each pair of
Bragg mirror includes GaAs sublayers and AlGaAs sublayers successively, the thickness of thickness≤AlGaAs sublayers of GaAs sublayers
Degree, each Quantum Well include AlGaAsP strain compensations layer successively, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers,
InGaAs layers, GaAlAs hyaline layers, AlGaAsP strain compensation layers, wherein the thickness of two AlGaAsP strain compensation layers is equal,
The thickness of 3 GaAlAs hyaline layers is equal, and two InGaAs layers of thickness is equal, also, InGaAs layers of thickness≤GaAlAs
The thickness of the thickness of hyaline layer≤AlGaAsP strain compensation layers.
As described above, the basic structure of semiconductor saturable absorbing mirror is exactly speculum and semiconductor saturable absorber
It is combined together, long Bragg mirror on substrate, grows layer of semiconductor saturable absorption body thin film thereon, top layer is direct
Using the interface of semiconductor and air as speculum, two speculums are formed a Fabry-Perot-type cavity up and down in this way,
By changing the thickness of absorber and the period of Bragg mirror, the modulation depth and speculum of absorber can be adjusted
Bandwidth.Quantum Well in saturable absorber is bleached under strong light, and most of intra-cavity energy can be made to pass through saturable absorption
Body reaches speculum, and is reflected back in laser cavity again；Under dim light, shows as absorbing unsaturated characteristic, sponge all
Incident light is effectively got rid of this part dim light from laser cavity, is demonstrated by the inhibiting effect of Q-switch and mode-locking, and due to inhaling
Having received pulse front edge part, pulse width can become narrow gradually in reflection process.
As described above, this case saturable absorber uses 8 quantum well structures, and convenient for constituting 8 standing wave cycles, and it is each
Quantum Well using AlGaAsP strain compensations layer, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers, InGaAs layers,
The symmetrical arrangement of GaAlAs hyaline layers, AlGaAsP strain compensation layers, convenient for making each Quantum Well be located at the peak value of standing wave
Position is conducive to the service life for improving SESAM with strain compensation, deformation caused by reduction cumulative stress is convenient for, to
Laser life-span is improved, laser maintenance cost is reduced.
As described above, when it is implemented, above structure is formed using metal organic chemical vapor deposition technology growth,
In, the growth temperature of Bragg mirror is 600~750 degrees Celsius, and the growth temperature of saturable absorber is taken the photograph for 500~650
Family name's degree.
As described above, the key parameter of saturable absorbing mirror has modulation depth α, absorptivity 1-Rns, reflectivity Rlin,
Damage threshold FdWith unsaturation absorption coefficient F2.Composite measurement is carried out by the saturable absorbing mirror obtained to this case, obtains result
It is 11.5% to have modulation depth α, absorptivity 1-RnsIt is 3.44%, reflectivity RlinIt is 85.04%, damage threshold FdFor
9.5mJ/cm2, unsaturation absorption coefficient F2For 6.3 × 102mJ/cm2.
As shown in Figures 3 to 6, this case saturable absorbing mirror is used in mode locked fiber laser as shown in Figure 2, it can
Realize that stable mode-locking, mode locking frequency are 33 megahertzs, the autocorrelation measurement parameter of pulse width is 19.92 picoseconds, pump power
For 120 milliwatts, signal optical output power is 4.7 milliwatts, and continuous power stability meets commercial Application within 3% within 24 hours
Demand.
As described above, this case protection is a kind of semiconductor saturable absorbing mirror structure with strain compensation, all and this
The same or similar technical solution of case structure should all be shown as falling into the protection domain of this case.
Claims (2)
1. a kind of semiconductor saturable absorbing mirror structure with strain compensation, it is characterised in that include n-GaAs substrates, in institute
State on n-GaAs substrates growth successively have 24 pairs of Bragg mirrors, 8 Quantum Well saturable absorber, wherein Mei Duibu
The thickness of glug speculum is 0.25 λ, and λ is design wavelength, and the thickness of each Quantum Well is 0.5 λ, each pair of Bragg mirror packet
Include GaAs sublayers successively and AlGaAs sublayers, the thickness of thickness≤AlGaAs sublayers of GaAs sublayers, each quantum well package
Include AlGaAsP strain compensations layer successively, GaAlAs hyaline layers, InGaAs layers, GaAlAs hyaline layers, InGaAs layers, GaAlAs
Hyaline layer, AlGaAsP strain compensation layers, wherein the thickness of two AlGaAsP strain compensation layers is equal, 3 GaAlAs hyaline layers
Thickness it is equal, two InGaAs layers of thickness is equal, also, the thickness of InGaAs layers of thickness≤GaAlAs hyaline layers≤
The thickness of AlGaAsP strain compensation layers.
2. a kind of semiconductor saturable absorbing mirror structure with strain compensation according to claim 1, it is characterised in that on
Structure is stated to form using metal organic chemical vapor deposition technology growth, wherein the growth temperature of Bragg mirror be 600~
750 degrees Celsius, the growth temperature of saturable absorber is 500~650 degrees Celsius.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810848549.4A CN108666860A (en) | 2018-07-28 | 2018-07-28 | A kind of semiconductor saturable absorbing mirror structure with strain compensation |
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| CN201810848549.4A CN108666860A (en) | 2018-07-28 | 2018-07-28 | A kind of semiconductor saturable absorbing mirror structure with strain compensation |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346911A (en) * | 2018-12-22 | 2019-02-15 | 北京工业大学 | A kind of tens of megahertzs of Gao Zhongying nanoseconds full optical fiber laser amplifier |
| CN111599899A (en) * | 2020-05-27 | 2020-08-28 | 京东方科技集团股份有限公司 | Light emitting diode, driving method thereof, light source device and electronic equipment |
| CN113224213A (en) * | 2021-03-18 | 2021-08-06 | 华灿光电(苏州）有限公司 | Infrared light-emitting diode epitaxial wafer and preparation method thereof |
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|---|---|---|---|---|
| CN1979980A (en) * | 2005-12-07 | 2007-06-13 | 中国科学院半导体研究所 | Semiconductor saturable absorbing mirror for optical-fiber laser passive-locked-mode |
| JP2007316206A (en) * | 2006-05-24 | 2007-12-06 | Sony Corp | Semiconductor saturable absorber mirror, method of manufacturing semiconductor saturable absorber mirror, laser beam generator and laser beam applying system |
| CN108011287A (en) * | 2016-10-31 | 2018-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of saturable absorbing mirror of composite construction |
| CN208508231U (en) * | 2018-07-28 | 2019-02-15 | 广东华快光子科技有限公司 | A kind of semiconductor saturable absorbing mirror structure |
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2018
- 2018-07-28 CN CN201810848549.4A patent/CN108666860A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1979980A (en) * | 2005-12-07 | 2007-06-13 | 中国科学院半导体研究所 | Semiconductor saturable absorbing mirror for optical-fiber laser passive-locked-mode |
| JP2007316206A (en) * | 2006-05-24 | 2007-12-06 | Sony Corp | Semiconductor saturable absorber mirror, method of manufacturing semiconductor saturable absorber mirror, laser beam generator and laser beam applying system |
| CN108011287A (en) * | 2016-10-31 | 2018-05-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of saturable absorbing mirror of composite construction |
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Non-Patent Citations (1)
| Title |
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| YAN WANG, ET AL.: "high damage threshold semiconductor saturable absorber mirror for fiber lasers" * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109346911A (en) * | 2018-12-22 | 2019-02-15 | 北京工业大学 | A kind of tens of megahertzs of Gao Zhongying nanoseconds full optical fiber laser amplifier |
| CN111599899A (en) * | 2020-05-27 | 2020-08-28 | 京东方科技集团股份有限公司 | Light emitting diode, driving method thereof, light source device and electronic equipment |
| CN111599899B (en) * | 2020-05-27 | 2021-10-01 | 京东方科技集团股份有限公司 | Light emitting diode, driving method thereof, light source device and electronic equipment |
| CN113224213A (en) * | 2021-03-18 | 2021-08-06 | 华灿光电(苏州）有限公司 | Infrared light-emitting diode epitaxial wafer and preparation method thereof |
| CN113224213B (en) * | 2021-03-18 | 2022-05-13 | 华灿光电(苏州）有限公司 | Infrared light-emitting diode epitaxial wafer and preparation method thereof |
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Effective date of registration: 20210729 Address after: 528400 zone a, third floor, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province Applicant after: GUANGDONG HUAKUAI PHOTON TECHNOLOGY Co.,Ltd. Address before: No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province, 528400 Applicant before: GUANGDONG HUAKUAI PHOTON TECHNOLOGY Co.,Ltd. Applicant before: GUANGDONG HUAYI LASER TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20220415 Address after: 528400 floors 1 and 2, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province Applicant after: GUANGDONG HUAYI LASER TECHNOLOGY Co.,Ltd. Address before: 528400 zone a, third floor, No. 28, Yuquan Road, Torch Development Zone, Zhongshan City, Guangdong Province Applicant before: GUANGDONG HUAKUAI PHOTON TECHNOLOGY CO.,LTD. |
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Application publication date: 20181016 |