CN103996969B - Stratiform VO2Laser pulse modulator device and application - Google Patents
Stratiform VO2Laser pulse modulator device and application Download PDFInfo
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- CN103996969B CN103996969B CN201410235281.9A CN201410235281A CN103996969B CN 103996969 B CN103996969 B CN 103996969B CN 201410235281 A CN201410235281 A CN 201410235281A CN 103996969 B CN103996969 B CN 103996969B
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- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000005086 pumping Methods 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 26
- 239000007787 solid Substances 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims description 99
- 238000000576 coating method Methods 0.000 claims description 99
- 239000013078 crystal Substances 0.000 claims description 21
- 238000002310 reflectometry Methods 0.000 claims description 20
- 238000007747 plating Methods 0.000 claims description 13
- 239000010453 quartz Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000000835 fiber Substances 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 9
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 9
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 9
- 238000004549 pulsed laser deposition Methods 0.000 claims description 8
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims description 8
- 210000000170 cell membrane Anatomy 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910017502 Nd:YVO4 Inorganic materials 0.000 claims description 6
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims description 2
- 238000003682 fluorination reaction Methods 0.000 claims description 2
- 239000010437 gem Substances 0.000 claims description 2
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 239000000087 laser glass Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- 241000209094 Oryza Species 0.000 claims 3
- 235000007164 Oryza sativa Nutrition 0.000 claims 3
- 235000009566 rice Nutrition 0.000 claims 3
- 244000283207 Indigofera tinctoria Species 0.000 claims 1
- 239000013307 optical fiber Substances 0.000 claims 1
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000008859 change Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 4
- 210000003462 vein Anatomy 0.000 description 4
- 210000001367 artery Anatomy 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052961 molybdenite Inorganic materials 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Abstract
The present invention relates to stratiform VO2Laser pulse modulator device and application.Stratiform VO2Impulse modulation device includes substrate and the VO being deposited on above substrate2Material, for carrying out adjusting Q and locked mode to the laser for producing near-infrared, is made all-solid state laser pulse modulated lasers；Described all-solid state laser includes pumping source, front cavity mirror, gain medium, VO with pulse modulated lasers2Modulation device, outgoing mirror；By described VO2Modulation device is put in the resonator of all solid state laser, and the laser of Q-switching device or mode-locking device is made.The impulse modulation device of the present invention have make it is simple, the features such as be conducive to industrialization production and be integrated.
Description
Technical field
The present invention relates to laser device technical field, more particularly to stratiform VO2Laser pulse modulator device and its entirely solid
Application in state pulse laser.
Background technology
Laser is described as one of 20th century greatest invention, is developed so far and has formed a huge industry, influence
Or influence the various fields of national economy.Pulse laser is excellent because peak power is high, energy is big, action time is short etc.
Gesture, is the important directions of laser development for a long time.Realizing the important technology of pulse laser has two classes：Actively modulation and passively tune
System.Wherein passive modulation device is play more and more important due to advantages such as simple to operate, compact conformations in pulse laser
Role.Conventional saturable absorption material mainly has chromium doped yttrium aluminum garnet (Cr at present4+:Y3Al5O12) and semiconductor can satisfy
And absorber, such as：SESAM and GaAs.Both passive modulation devices have the disadvantages that：Manufacture craft is extremely complex；To ripple
Long modulation range is especially sensitive, and for different wavelength, its absorption differs greatly, and does not absorb even；Volume is relatively large, unfavorable
In the integrated of micro-nano device.These shortcomings bring inconvenience to its application.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of stratiform VO2Impulse modulation device and its in all-solid state laser
In application.
Term explanation：
Stratiform VO2, refer to the vanadium dioxide film of three-layer laminated structure.
Technical scheme is as follows：
A kind of stratiform VO2Impulse modulation device, including substrate and the VO being deposited on above substrate2Material, substrate is selected from fluorination
Magnesium substrate, quartz substrate, Sapphire Substrate or the other crystal or ceramic material substrate to laser light used；VO2Material
Thickness is 10-200 nanometers, using vapour deposition, magnetron sputtering and pulsed laser deposition over the substrate.
According to currently preferred, the substrate is polycrystalline quartz plate or magnesium fluoride, and thickness is 1-2mm.
According to currently preferred, the VO being deposited on above substrate2Material thickness is 20-70 nanometers.It is further excellent
Select 40-60 nanometers.
According to currently preferred, VO is not loaded with substrate2One side plating be conducive to the anti-reflection deielectric-coating of laser generation.
The deielectric-coating can change the reflectivity of oscillation light according to requirement during application, when overcoming not plated film reflectivity it is immutable etc. because
The shortcoming that element is brought, is conducive to the design of pulse laser.Anti-reflection light transmission rate >=98% referred to specific wavelength.
Described VO2Impulse modulation device can be processed into arbitrary shape well known in the art, it is preferred that described VO2Arteries and veins
Modulated device is rectangle or circle.Preferred 1.5-3 × 2 of rectangular dimension, unit cm, round diameter is 1.5-3cm.
The VO of the present invention2The preparation method of impulse modulation device presses prior art.VO2The preparation of impulse modulation device
Comprise the following steps：
(1) VO is deposited on substrate using pulsed laser deposition by prior art2Material；Optionally also include following step
Suddenly：
(2) it is not loaded with VO on substrate2One side be plated with the deielectric-coating for being conducive to laser generation.
The VO of the present invention2The application of impulse modulation device, carries out impulse modulation, including adjust Q for the laser to near-infrared
And locked mode.Pulse laser can be produced.
It is particularly preferred, stratiform VO2The application of impulse modulation device, for all-solid state laser pulse modulated lasers.
One kind is based on VO2All-solid state laser pulse modulated lasers, including pumping source, front cavity mirror, laser gain is situated between
Matter, VO2Modulation device, outgoing mirror.Described front cavity mirror and outgoing mirror composition resonator, front cavity mirror is plated with high to laser wavelength anti-
Deielectric-coating is penetrated, outgoing mirror is plated with to laser wavelength part reflecting medium film.By described VO2Modulation device is put in all-solid state laser
In the resonator of device, the laser of Q-switching device or mode-locking device is made.
According to above-mentioned all-solid state laser pulse modulated lasers, described gain medium is semiconductor, laser
Crystal, laser ceramics or laser glass etc. are all to produce the medium of laser gain, be processed into cylinder or cuboid, its
End face is plated with the deielectric-coating of the absorption and the laser generation that are conducive to pump light, can also be finishing polish not plated film.It is preferred that, institute
The gain medium stated is neodymium doped yttrium aluminum garnet (Nd:Y3Al5O12, referred to as：Nd:YAG) crystal or ceramics, neodymium doping vanadium
Sour yttrium is (referred to as：Nd:YVO4) crystal and Ti∶Sapphire laser are (referred to as：Ti:Al2O3) crystal, its doping concentration is known to the industry.
According to above-mentioned all-solid state laser pulse modulated lasers, described pumping source is semiconductor laser diode
Or xenon lamp etc. can provide the light source of pump energy (LD).Pump mode is end pumping or profile pump.
According to above-mentioned all-solid state laser pulse modulated lasers, front cavity mirror, output mirror curvature in resonator can roots
Designed, designed is required according to resonator, Resonator design is well known in the art technology.
The laser of Q-switching device or mode-locking device is described in detail respectively below.Wherein, " the increasing on deielectric-coating
Thoroughly ", " high reflection ", " part is reflected " have implication well known in the art, and " anti-reflection " refers generally to the light transmission rate to specific wavelength
>=95%, " high reflection " refers generally to reflectivity >=99% to specific wavelength, and " part is reflected " refers generally to the anti-of specific wavelength
Rate is penetrated between 80%-99%.
1st, according to above-mentioned all-solid state laser pulse modulated lasers, it is preferred that based on VO2All-solid state laser arteries and veins
Modulated laser is end pumping VO2Q-switching device laser：
A kind of end pumping VO2Q-switching device laser, including pumping source, fiber coupling system, focusing system, front cavity mirror,
Gain medium, VO2Modulation device, plano-concave outgoing mirror.The resonator that front cavity mirror and outgoing mirror are constituted uses straight chamber, resonator
Length takes 1-10cm.Pump light is input in gain medium through fiber coupling system, focusing system and front cavity mirror, is produced
Laser is through VO2Pass through plano-concave outgoing mirror, output Q-switched pulse again after modulation device modulation.
In order to suppress the generation of mode-locked laser, the resonator is more short better, is preferred with length 1cm.
It is further preferred that the pumping source is launch wavelength 808nm LD lasers.The front cavity mirror is level crossing,
The deielectric-coating anti-reflection to 808nm is plated with close to pumping source end surface, is plated with close to resonator end surface to 1.05-1.1 μm
The deielectric-coating of high reflection.
The gain medium is Nd:YAG crystal.
The plano-concave outgoing mirror radius is 10-1000mm, and its concave surface is plated with is to 1.05-1.1 μm of part reflection, reflectivity
Deielectric-coating between 80%-99%, its plane is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm.
As gain media Nd:When YAG crystal is exported as 946nm wavelength, corresponding front cavity mirror and outgoing mirror both sides plating
Deielectric-coating also to change accordingly.Front cavity mirror is level crossing, and the medium anti-reflection to 808nm is plated with close to pumping source end surface
Film, the deielectric-coating to 0.9-1 μm of high reflection is plated with close to resonator end surface；Outgoing mirror is plano-concave mirror, and radius is 10-
1000mm, it is deielectric-coating between 80%-99% that its concave surface, which is plated with to 0.9-1 μm of part reflection, reflectivity, and its plane is plated with pair
0.9-1 μm of anti-reflection deielectric-coating.
When gain media is Nd:YVO4When being exported as 1.06 μm or 1.34 mum wavelengths, corresponding front cavity mirror and outgoing mirror
The deielectric-coating of both sides plating will also change accordingly.When 1. being exported for 1.06 mum wavelengths, front cavity mirror is level crossing, close to pumping source
End surface is plated with the deielectric-coating anti-reflection to 808nm, and Jie to 1.05-1.1 μm of high reflection is plated with close to resonator end surface
Plasma membrane；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its concave surface is plated with is to 1.05-1.1 μm of part reflection, reflectivity
Deielectric-coating between 80%-99%, its plane is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm.2. exported for 1.34 mum wavelengths
When, front cavity mirror is level crossing, and the deielectric-coating anti-reflection to 808nm is plated with close to pumping source end surface, close to resonator one end table
Face is plated with the deielectric-coating to 1.3-1.4 μm of high reflection；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its concave surface is plated with pair
1.3-1.4 μm of part reflection, reflectivity are the deielectric-coating between 80%-99%, and its plane is plated with Jie anti-reflection to 1.3-1.4 μm
Plasma membrane.
When gain media is changed into Ti:Al2O3During wavelength output wide as 700-900nm, pumping source is left to be emitted as 500nm
Right green glow or blue laser, the deielectric-coating of corresponding front cavity mirror and outgoing mirror both sides plating will also change accordingly.Front cavity mirror
For level crossing, the deielectric-coating anti-reflection to pump optical wavelength is plated with close to pumping source end surface, is plated with close to resonator end surface
To the deielectric-coating of 0.7-0.9 μm of high reflection；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its concave surface is plated with to 0.7-0.9 μ
The reflection of m parts, reflectivity are the deielectric-coating between 80%-99%, and its plane is plated with the deielectric-coating anti-reflection to 0.7-0.9 μm.
2nd, according to above-mentioned all-solid state laser pulse modulated lasers, it is preferred that based on VO2All-solid state laser arteries and veins
Modulated laser is end pumping VO2Mode-locking device laser：
A kind of end pumping VO2Mode-locking device laser, including pumping source, fiber coupling system, focusing system, ante-chamber
Mirror, gain medium, plano-concave speculum, VO2Modulation device, average outgoing mirror.The resonator that front cavity mirror and outgoing mirror are constituted
Using v-shaped cavity, pump light is input in gain medium through fiber coupling system, focusing system and front cavity mirror, anti-through plano-concave
Penetrate after mirror reflection by VO2Modulation device, mode locking pulse is exported finally by average outgoing mirror.
It is further preferred that the pumping source is launch wavelength 808nm LD lasers.Front cavity mirror is level crossing, close
Pumping source end surface is plated with the deielectric-coating anti-reflection to 808nm, is plated with close to resonator end surface to 1.05-1.1 μm high anti-
The deielectric-coating penetrated.
The gain medium is Nd:YAG crystal, pumping light-incident end is coated with anti-reflection to 808nm, 1.05-1.1 μm
Deielectric-coating, the deielectric-coating anti-reflection to 1.05-1.1 μm is plated with output end face.
The concave surface of the plano-concave speculum is plated with the deielectric-coating to 1.05-1.1 μm of high reflection.
The outgoing mirror is plated with the deielectric-coating to 1.05-1.1 μm of part reflection close to resonator one end, and the other end is plated with pair
1.05-1.1 μm of anti-reflection deielectric-coating.
When with Nd:When YAG crystal is exported as 946nm wavelength, the deielectric-coating of corresponding front cavity mirror and outgoing mirror both sides plating
Also to change accordingly.Front cavity mirror is level crossing, and the deielectric-coating anti-reflection to 808nm is plated with close to pumping source end surface, close
Resonator end surface is plated with the deielectric-coating to 0.9-1 μm of high reflection；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its is recessed
It is the deielectric-coating between 80%-99% that face, which is plated with to 0.9-1 μm of part reflection, reflectivity, and its plane is plated with anti-reflection to 0.9-1 μm
Deielectric-coating.
When gain media is changed into Nd:YVO4During as 1.06 μm, the output of 1.34 mum wavelengths, corresponding front cavity mirror and outgoing mirror
The deielectric-coating of both sides plating will also change accordingly.When 1. being exported for 1.06 mum wavelengths, front cavity mirror is level crossing, close to pumping source
End surface is plated with the deielectric-coating anti-reflection to 808nm, and Jie to 1.05-1.1 μm of high reflection is plated with close to resonator end surface
Plasma membrane；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its concave surface is plated with is to 1.05-1.1 μm of part reflection, reflectivity
Deielectric-coating between 80%-99%, its plane is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm.2. exported for 1.34 mum wavelengths
When, front cavity mirror is level crossing, and the deielectric-coating anti-reflection to 808nm is plated with close to pumping source end surface, close to resonator one end table
Face is plated with the deielectric-coating to 1.3-1.4 μm of high reflection；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its concave surface is plated with pair
1.3-1.4 μm of part reflection, reflectivity are the deielectric-coating between 80%-99%, and its plane is plated with Jie anti-reflection to 1.3-1.4 μm
Plasma membrane.
When gain media is changed into Ti:Al2O3During wavelength output wide as 700-900nm, corresponding front cavity mirror and outgoing mirror two
The deielectric-coating of side plating will also change accordingly, and pumping source is the green glow or blue laser for being emitted as 500nm or so.Front cavity mirror is
Level crossing, is plated with the deielectric-coating anti-reflection to pump optical wavelength close to pumping source end surface, is plated with pair close to resonator end surface
The deielectric-coating of 0.7-0.9 μm of high reflection；Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and its concave surface is plated with to 0.7-0.9 μm
Part reflection, reflectivity are the deielectric-coating between 80%-99%, and its plane is plated with the deielectric-coating anti-reflection to 0.7-0.9 μm.
The VO that the present invention is provided2During impulse modulation, have the advantage that：
1st, stratiform VO2It is monoclinic phase at room temperature, energy gap is 0.5ev or so；In 65-68 DEG C of recurring structure phase transformation,
It is changed into Tetragonal, metallic state is now presented.There is saturable absorption characteristic under strong light.It has also been found that VO2Narrow taboo
Bandwidth is with the characteristics of being easily integrated, and making it as impulse modulation device has the incomparable advantage of other materials.For arteries and veins
Impulse light modulation can produce pulse laser.
2nd, manufacture craft is simple, suitable for batch production：Stratiform VO2Preparation method (vapour deposition, magnetic with comparative maturity
Control sputtering and pulsed laser deposition), substrate can select the various materials such as quartz, magnesium fluoride, sapphire, and the size of its size is determined
In the size of its substrate.Prepared just because of its material and the characteristic insensitive to substrate, such modulation device has can industry
The potentiality changed and produced in batches.
3rd, it is easy to integrated：Stratiform VO2Film can be prepared on substrate with ripe semiconductor technology, enter horizontal pulse tune
Section, the preparation method of the material determines that the film can be deposited directly on outgoing mirror or laser material, is easy to material device
Part integrated design and integrated.
Brief description of the drawings
Fig. 1 is the VO of the magnesium fluoride Grown of the present invention2Photo in kind.
Fig. 2 is VO of the present invention2The structural representation of impulse modulation device, wherein, 1.VO2, 2. substrates.
Fig. 3 is LD end pumpings, based on VO2All-solid state laser pulse modulated lasers structural representation, VO2Modulation
Device as Q-switching device laser device, wherein, 3. pumping sources, 4. fiber coupling systems, 5. focusing systems, 6. front cavity mirrors, 7.
Gain medium, 8.VO2Modulation device, 9. plano-concave outgoing mirrors.
Fig. 4 is LD end pumpings, based on VO2All-solid state laser pulse modulated lasers structural representation, VO2Modulation
Device as mode-locking device laser device structure schematic diagram, wherein, 10. plano-concave speculums, 11. average outgoing mirrors.
Embodiment
The embodiment that the invention will now be described in detail with reference to the accompanying drawings, wherein will for identical in the description of the drawings
Element assigns identical symbol, omits repetitive description.The polycrystalline quartz plate Wujiang quartz ware factory used in embodiment is on sale.
Embodiment 1：
VO2Impulse modulation device, including substrate and the VO being deposited on above substrate2Material, structure are as shown in Fig. 2 substrate is selected
Select magnesium fluoride substrate, thickness 1mm；The VO2Material thickness is 50nm, is processed as rectangular sheet, and size is 2 × 2cm, photo in kind
As shown in Figure 1.
In the VO of magnesium fluoride Grown2Its preparation method be by the use of specific direction polishing magnesium fluoride single-chip as
Substrate, is obtained using pulsed laser deposition.Referring to " Characterization of pulsed laser deposited
MoS2By transmission electron microscopy ", J.Mater.Res, 1993,8 (11):2933.
The VO of the present embodiment2Impulse modulation device is applied to be adjusted with pulse as all-solid state laser in example 3 below, 5
The Q-switching device (embodiment 3) or mode-locking device (embodiment 5) of laser processed.
Embodiment 2：Such as embodiment 1, except that substrate is polycrystalline quartz plate, thickness 1-2mm；The VO2Material is thick
Spend for 60nm, be processed as circular piece.A diameter of 2cm.
The VO of the present embodiment2Impulse modulation device is applied to use as all-solid state laser in example 4 below, embodiment 6
The Q-switching device (embodiment 4) or mode-locking device (embodiment 6) of pulse modulated lasers.
Embodiment 3：A kind of end pumping VO2Q-switching device laser
Structure is as shown in figure 3, the device includes pumping source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, laser
Gain media 7, VO2Modulation device 8 and outgoing mirror 9.Wherein VO2Modulation device 8 is the product of embodiment 1.
Pumping source 3 is launch wavelength 808nm LD lasers.Front cavity mirror 6 is a level crossing, close to pumping source end surface
The deielectric-coating anti-reflection to 808nm is plated with, the deielectric-coating to 1.05-1.1 μm of high reflection is plated with close to resonator end surface.Laser
Gain media 7 is Nd:YAG crystal, Nd3+Ion concentration is 0.5at.%, and incident end face is coated with anti-reflection to 808nm, 1064nm
The deielectric-coating anti-reflection to 1064nm is plated with deielectric-coating, outgoing end face.VO2The substrate of modulation device 8 does not grow VO2Face not plated film.
Outgoing mirror 9 is the plano-concave mirror that Radius is 100mm, and concave surface is plated with the deielectric-coating to 1.05-1.1 μm of part reflection, its reflectivity
For 80%-99%, plane is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm.Utilize VO2Material realizes that Q-switch laser is exported, and increases
Pump power, can directly output Q-switched pulse laser, output wavelength be 1.06 μm.
Embodiment 4：A kind of end pumping VO2Q-switching device laser
As described in Example 3, except that VO therein2Modulation device 8 is the product of embodiment 2.
Gain media 7 replaces with Nd:YVO4(Nd3+Ion concentration is 0.5at.%) it is defeated as 1.06 μm and 1.34 mum wavelengths
Go out：When 1. being exported for 1.06 mum wavelengths, VO2Modulation device 8 is the product of embodiment 2, and quartz substrate does not grow VO2Face plating
So that to 1.06 μm of anti-reflection deielectric-coating, front cavity mirror 6 is level crossing, and Jie anti-reflection to 808nm is plated with close to pumping source end surface
Plasma membrane, the deielectric-coating to 1.05-1.1 μm of high reflection is plated with close to resonator end surface；Outgoing mirror 9 is that Radius is 100mm
Plano-concave mirror, its concave surface be plated with to 1.05-1.1 μm part reflection, reflectivity be 80%-99% between deielectric-coating, its plane
It is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm.Increase pump power, can directly output Q-switched pulse laser, output wavelength is
1.06μm.When 2. being exported for 1.34 mum wavelengths, VO2Modulation device 8 is the product of embodiment 2, and quartz substrate does not grow VO2's
Face is plated with the deielectric-coating anti-reflection to 1.34 μm.Front cavity mirror 6 is level crossing, is plated with close to pumping source end surface anti-reflection to 808nm
Deielectric-coating, be plated with deielectric-coating to 1.3-1.4 μm of high reflection close to resonator end surface；Outgoing mirror 9 is that Radius is
100mm plano-concave mirror, it is the deielectric-coating between 80%-99% that its concave surface, which is plated with to 1.3-1.4 μm of part reflection, reflectivity, its
Plane is plated with the deielectric-coating anti-reflection to 1.3-1.4 μm.Increase pump power, can directly output Q-switched pulse laser, output wavelength is
1.3μm。
Embodiment 5：A kind of end pumping VO2Mode-locking device laser
Structure is as shown in figure 4, the device includes pumping source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, laser
Gain media 7, plano-concave speculum 10, VO2Modulation device 8 and the part of outgoing mirror 11 8.Pumping source 3 is launch wavelength 500nm
LD lasers.Front cavity mirror 6 is a level crossing, and the deielectric-coating anti-reflection to 500nm is plated with close to pumping source end surface, close
Resonator end surface is plated with the deielectric-coating to 700-900nm high reflections.Gain medium 7 is titanium gem crystal, incidence end
Face is coated with the deielectric-coating anti-reflection to 500nm, 700-900nm, and outgoing end face is coated with the deielectric-coating anti-reflection to 700-900nm.Plano-concave
Speculum 10 is plano-concave mirror, and concave surface is plated with the deielectric-coating to 700-900nm high reflections.VO2The quartz substrate of modulation device 8 is not given birth to
Long VO2Face be plated with anti-reflection film to 700-900nm.Outgoing mirror 11 is plated with to 700-900nm reflectivity close to resonator one end
About 97% part reflecting medium film, the other end is plated with the deielectric-coating anti-reflection to 700-900nm.Utilize VO2Material realizes lock
Mould laser is exported, and is increased pump power, can directly be exported Mode-locked laser.
Embodiment 6：
As described in Example 5, except that VO2Modulation device is the product of embodiment 2, and does not grow VO on substrate2's
Surface is plated with the deielectric-coating anti-reflection to 700-900nm.
Certainly, the present invention can also have other various embodiments, ripe in the case of without departing substantially from spirit of the invention and its essence
Various corresponding changes and modification, but these corresponding changes and change ought can be made according to the present invention by knowing those skilled in the art
Shape should all belong to the protection domain of appended claims of the invention.
Claims (8)
1. a kind of stratiform VO2Application of the impulse modulation device in complete solid state pulse laser, by described VO2Pulse-modulator
Part is put in the resonator of complete solid state pulse laser, and the laser with Q-switching device or mode-locking device is made；
Layered VO2Impulse modulation device includes substrate and the VO being deposited on above substrate2Material, wherein substrate are selected from fluorination
Magnesium substrate, quartz substrate, Sapphire Substrate or the other crystal or ceramic material substrate to laser light used；VO2Material
Thickness is 10-200 nanometers, using pulsed laser deposition over the substrate；It is not loaded with VO on substrate2One side plating be conducive to
The anti-reflection deielectric-coating of laser generation；
Layered VO2It is monoclinic phase at room temperature, energy gap is 0.5 eV or so, the recurring structure phase transformation at 65-68 DEG C,
It is changed into Tetragonal, metallic state is presented, there is saturable absorption characteristic under strong light；Pulse can be produced for pulse laser modulation
Laser.
2. stratiform VO as claimed in claim 12Application of the impulse modulation device in complete solid state pulse laser, its feature exists
In the substrate thickness be 1-2mm；The VO being deposited on above substrate2Material thickness is 20-70 nanometers.
3. one kind is based on VO2All-solid state laser pulse modulated lasers, including pumping source, front cavity mirror, gain medium,
VO2Modulation device, outgoing mirror；Wherein,
VO2Modulation device includes substrate and the VO being deposited on above substrate2Material, wherein substrate are selected from magnesium fluoride substrate, quartz lining
Bottom, Sapphire Substrate or the other crystal or ceramic material substrate to laser light used；VO2Material thickness is received for 10-200
Rice, using pulsed laser deposition over the substrate；It is not loaded with VO on substrate2One side plating be conducive to the anti-reflection of laser generation
Deielectric-coating；
Described front cavity mirror and outgoing mirror composition resonator, front cavity mirror are plated with to laser wavelength high reflection deielectric-coating, outgoing mirror plating
With to laser wavelength part reflecting medium film；By described VO2Modulation device is put in the resonator of all solid state laser, VO2
Modulation device has saturable absorption characteristic under strong light, and the laser with Q-switching device or mode-locking device is made；
Described gain medium is semiconductor, laser crystal, laser ceramics or laser glass, be processed into cylinder or
Cuboid, its end face is plated with the deielectric-coating or not plated film of the absorption and the laser generation that are conducive to pump light.
4. VO is based on as claimed in claim 32All-solid state laser pulse modulated lasers, it is characterised in that it is described to swash
Optical gain medium is neodymium doped yttrium aluminum garnet crystal or ceramics, or neodymium doped yttrium vanadate crystal or titanium gem crystal, pumping side
Formula is end pumping or profile pump.
5. a kind of end pumping VO2Q-switching device laser, including pumping source, fiber coupling system, focusing system, front cavity mirror swash
Optical gain medium, VO2Modulation device, plano-concave outgoing mirror；Wherein,
VO2Modulation device includes substrate and the VO being deposited on above substrate2Material, wherein substrate are selected from magnesium fluoride substrate, quartz lining
Bottom, Sapphire Substrate or the other crystal or ceramic material substrate to laser light used；VO2Material thickness is received for 10-200
Rice, using pulsed laser deposition over the substrate；It is not loaded with VO on substrate2One side plating be conducive to the anti-reflection of laser generation
Deielectric-coating；
The resonator that front cavity mirror and plano-concave outgoing mirror are constituted uses straight chamber, and cavity length is 1-10cm；Pump light is through optical fiber coupling
Syzygy system, focusing system and front cavity mirror are input in gain medium, produce laser through described VO2After modulation device modulation
Again by plano-concave outgoing mirror, output Q-switched pulse, VO2Modulation device has saturable absorption characteristic under strong light.
6. end pumping VO as claimed in claim 52Q-switching device laser, it is characterised in that：
As gain medium Nd:When YAG crystal is exported as 946nm wavelength：Front cavity mirror is level crossing, close to pumping source one
End surfaces are plated with the deielectric-coating anti-reflection to 808nm, and the deielectric-coating to 0.9-1 μm of high reflection is plated with close to resonator end surface；
Plano-concave outgoing mirror radius is 10-1000mm, and it is Jie between 80%-99% that its concave surface, which is plated with to 0.9-1 μm of part reflection, reflectivity,
Plasma membrane, its plane is plated with the deielectric-coating anti-reflection to 0.9-1 μm；
When gain medium is Nd:YVO4During as 1.06 μm of wavelength output, front cavity mirror is level crossing, close to pumping source one end
Surface is plated with the deielectric-coating anti-reflection to 808nm, and the deielectric-coating to 1.05-1.1 μm of high reflection is plated with close to resonator end surface；
Plano-concave outgoing mirror radius is 10-1000mm, and its concave surface is plated with to 1.05-1.1 μm of part reflection, reflectivity as between 80%-99%
Deielectric-coating, its plane is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm；
When gain medium is Nd:YVO4When being exported as 1.34 mum wavelengths, when being exported for 1.34 mum wavelengths, front cavity mirror is
Level crossing, is plated with the deielectric-coating anti-reflection to 808 nm close to pumping source end surface, is plated with pair close to resonator end surface
The deielectric-coating of 1.3-1.4 μm of high reflection；Plano-concave outgoing mirror radius is 10-1000mm, and its concave surface is plated with anti-to 1.3-1.4 μm of part
Penetrate, reflectivity is the deielectric-coating between 80%-99%, its plane is plated with the deielectric-coating anti-reflection to 1.3-1.4 μm；
When gain medium is changed into Ti:Al2O3During wavelength output wide as 700-900 nm, pumping source is transmitting green glow or indigo plant
The laser of light, front cavity mirror is level crossing, and the deielectric-coating anti-reflection to pump wavelength is plated with close to pumping source end surface, close
Resonator end surface is plated with the deielectric-coating to 0.7-0.9 μm of high reflection；Plano-concave outgoing mirror radius is 10-1000mm, its concave surface
It is the deielectric-coating between 80%-99% to be plated with to 0.7-0.9 μm of part reflection, reflectivity, and its plane is plated with anti-reflection to 0.7-0.9 μm
Deielectric-coating.
7. a kind of end pumping VO2Mode-locking device laser, including pumping source, fiber coupling system, focusing system, front cavity mirror swash
Optical gain medium, plano-concave speculum, VO2Modulation device, average outgoing mirror；Wherein,
VO2Modulation device includes substrate and the VO being deposited on above substrate2Material, wherein substrate are selected from magnesium fluoride substrate, quartz lining
Bottom, Sapphire Substrate or the other crystal or ceramic material substrate to laser light used；VO2Material thickness is received for 10-200
Rice, using pulsed laser deposition over the substrate；It is not loaded with VO on substrate2One side plating be conducive to the anti-reflection of laser generation
Deielectric-coating；
The resonator that front cavity mirror and average outgoing mirror are constituted uses v-shaped cavity, and pump light is through fiber coupling system, focusing system and preceding
Hysteroscope is input in gain medium, and VO is passed through after being reflected through plano-concave speculum2Modulation device, VO2Modulation device is under strong light
With saturable absorption characteristic, mode locking pulse is exported finally by average outgoing mirror.
8. end pumping VO as claimed in claim 72Mode-locking device laser, it is characterised in that：
The pumping source is launch wavelength 808nm LD lasers；Front cavity mirror is level crossing, is plated with close to pumping source end surface
The deielectric-coating anti-reflection to 808nm, the deielectric-coating to 1.05-1.1 μm of high reflection is plated with close to resonator end surface；
The gain medium is Nd:YAG crystal, pumping light-incident end is coated with Jie anti-reflection to 808nm, 1.05-1.1 μm
Plasma membrane, is plated with the deielectric-coating anti-reflection to 1.05-1.1 μm on output end face；
The concave surface of the plano-concave speculum is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The average outgoing mirror is plated with the deielectric-coating to 1.05-1.1 μm of part reflection close to resonator one end, and the other end is plated with pair
1.05-1.1 μm of anti-reflection deielectric-coating.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH461H (en) * | 1978-11-30 | 1988-04-05 | Non-reflective/reflective phase transition optical modulator | |
| CN103368057A (en) * | 2013-07-03 | 2013-10-23 | 山东大学 | Two-dimensional MoS2 laser pulse modulation device and pulse modulated laser for all-solid state laser |
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2014
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH461H (en) * | 1978-11-30 | 1988-04-05 | Non-reflective/reflective phase transition optical modulator | |
| CN103368057A (en) * | 2013-07-03 | 2013-10-23 | 山东大学 | Two-dimensional MoS2 laser pulse modulation device and pulse modulated laser for all-solid state laser |
Non-Patent Citations (1)
| Title |
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| Passive Q switching and mode-locking of Er:glass lasers using V02 mirrors;S.A.Pollack等;《J.Appl.Phys.》;19950915;第78卷(第6期);摘要、第3593-3594页VO2 Mirrors as passive Q-switch elements,第3595-3596页Experimental results、图2 * |
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