CN208189972U - A kind of Laser pulse modulator device based on silicon nanometer sheet and the laser based on the Laser pulse modulator device - Google Patents
A kind of Laser pulse modulator device based on silicon nanometer sheet and the laser based on the Laser pulse modulator device Download PDFInfo
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- CN208189972U CN208189972U CN201820288006.7U CN201820288006U CN208189972U CN 208189972 U CN208189972 U CN 208189972U CN 201820288006 U CN201820288006 U CN 201820288006U CN 208189972 U CN208189972 U CN 208189972U
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Abstract
The utility model relates to a kind of Laser pulse modulator device based on silicon nanometer sheet, silicon nanometer sheet Laser pulse modulator device is made by silicon crystal, including substrate and the silicon nanometer sheet material for being deposited on substrate face.The laser resonance that silicon nanometer sheet Laser pulse modulator device is inserted into the operating of continuous or long pulse is intracavitary, and short-pulse laser output may be implemented.The utility model silicon nanometer sheet Laser pulse modulator device has the advantage that (1) silicon nanometer sheet material has the characteristic insensitive to wavelength, it can be achieved that modulation to visible infrared band laser.(2) silicon nanometer sheet can be made by clay, and abundant raw material is cheap, and manufacture craft is simple, be suitable for batch production.(3) it is convenient for integrated: film can be prepared on substrate with mature technique, realizes the integrated design from material to device and integrate.The utility model further relates to the laser of the Laser pulse modulator device based on the silicon nanometer sheet.
Description
Technical field
The utility model relates to a kind of Laser pulse modulator device based on silicon nanometer sheet and it is based on the Laser pulse modulator device
Laser, belong to laser technology field.
Background technique
Since the sixties in last century, first of world ruby laser came out, laser developments have formed one so far
Huge industry has important application in fields such as industry, national defence, science and technology, medicine and the consumer goods.Wherein pulse laser has
There are the advantages such as peak power is high, energy is big, the burst length is short, is the important component and developing direction of laser.Realize pulse
The technology of laser is broadly divided into two classes: actively modulation and passive modulation.Wherein passive modulation refers to satisfying by material itself
The loss for generating process to laser with absorption characteristic is adjusted, to obtain pulse laser.This modulation system has operation
Simply, the compact-sized, advantages such as low energy consumption, in pulse laser using more and more common.Currently used saturable absorption
Material is broadly divided into two classes: the insulating material (the yag crystal Cr:YAG for such as mixing chromium) with special ion doping
With semiconductor material (such as GaAs and SESAM).These two types of materials have preparation process complexity, saturable absorption performance for wave
With very strong dependence, volume is relatively large, the cost is relatively high the disadvantages of, therefore application range is subject to certain restrictions.Mesh
Before, people are still trying to explore novel, and performance is more excellent, comprehensive saturable absorption material.
In recent years, it is obtained using graphene as the two-dimensional material of representative in many fields such as biology, medicine, communication, microelectronics
Extensive research and application.In optics aspect, two-dimensional material has the spies such as absorption bands are wide, the response time is short, optical loss is low
Point, therefore in Laser Modulation field, it also receives more and more attention, such as graphene (G), black phosphorus (BP), topological insulator
(Bi2Se3), transition metal oxide (VO2) etc. New Two Dimensionals material be used as Laser Modulation device to apply in solid state laser
In.But in practical applications, however it remains some problems, as there is graphene low modulation depth and biggish unsaturation to damage
Consumption, black phosphorus is highly unstable in the environment, can degrade within a few hours, and topological insulator needs complicated preparation process etc..Cause
This, people are still trying to explore the more excellent performance of two-dimensional material of Laser Modulation.Silicon is the most important material of modern electronic technology
Material, candidate material of the silicon nanometer sheet as anode of lithium ion battery can be used for portable electronic device, the large size of high-energy density
The fields such as energy-storage system and electric car.Up to the present, about silicon nanometer sheet in optical field using relatively fewer, do not send out
Now about silicon nanometer sheet saturable absorption effect and its as the report of Laser pulse modulator device.
Summary of the invention
In view of the deficiencies of the prior art, the utility model provides a kind of Laser pulse modulator device based on silicon nanometer sheet；
The utility model additionally provides application of the above-mentioned Laser pulse modulator device in all solid state laser；
Term is explained:
1, above substrate: referring to the upper surface for being loaded with silicon nanometer sheet material.
2, substrate back: refer to the one side for not being loaded with silicon nanometer sheet material on substrate.
3, anti-reflection: to refer generally to the light transmission rate of specific wavelength not less than 95%.
4, high reflection refers generally to the light reflectivity of specific wavelength not less than 99%.
5, part is reflected, and is referred generally to the light reflectivity of specific wavelength between 40%-99%.
The technical solution of the utility model are as follows:
A kind of Laser pulse modulator device based on silicon nanometer sheet, including substrate and the silicon nanometer being deposited on above the substrate
Sheet material.
Silicon nanometer sheet material is existing known material.
Laser pulse modulator device of the utility model based on silicon nanometer sheet has the advantage that (1) silicon nanometer sheet material has
There is the characteristic insensitive to wavelength, it can be achieved that modulation to visible infrared band laser.(2) silicon nanometer sheet can be by clay system
, abundant raw material is cheap, and manufacture craft is simply mature, is suitable for batch production.(3) convenient for integrated: mature technique can be used
It is prepared into film on substrate, realize the integrated design from material to device and integrates.
It is preferred according to the utility model, the substrate with a thickness of 0.5-3mm；The silicon nanometer sheet material with a thickness of
1-50nm。
It is further preferred that the silicon nanometer sheet material with a thickness of 5-20nm.
Most preferably, the substrate with a thickness of 2mm；The silicon nanometer sheet material with a thickness of 5nm.
Preferred according to the utility model, the substrate is crystal, glass or ceramic material.
It is further preferred that the substrate is quartz substrate or Sapphire Substrate.
Preferred according to the utility model, the substrate back is plated with the deielectric-coating for being conducive to laser generation.Be conducive to swash
The requirement when deielectric-coating of light generation can be applied according to impulse modulation device, realizes the variable controllable of reflectivity, overcomes and do not plate
The shortcomings that factors such as reflectivity is immutable when film are brought, is conducive to the design of pulse laser.For example, working as gain media Nd:
When YAG crystal is exported as 946nm wavelength, substrate back is coated with to the antireflective deielectric-coating of 946nm
Laser pulse modulator device described in the utility model based on silicon nanometer sheet, can be prepared into arbitrary shape, preferably
, the Laser pulse modulator device based on silicon nanometer sheet is rectangle or circle.
The application of the Laser pulse modulator device based on silicon nanometer sheet of the utility model, for visible or infrared laser into
Row impulse modulation, including passive Q-adjusted or passive mode-locking.
A kind of all solid state laser based on silicon nanometer sheet pulse-modulator, including the first pumping successively placed along optical path
Source, the first front cavity mirror, first laser gain media, the Laser pulse modulator device based on silicon nanometer sheet, the first outgoing mirror.
The silicon nanometer sheet Laser pulse modulator device is put in resonant cavity, pump light is input to through the first front cavity mirror
In one laser gain medium, the laser of generation is through the Laser pulse modulator device modulation based on silicon nanometer sheet, from the first outgoing mirror one
Hold output Q-switched or mode-locked laser pulse.
Based on silicon nanometer sheet material have the characteristic insensitive to wavelength, the utility model based on silicon nanometer sheet pulse tune
The all solid state laser of device processed can realize the modulation to visible infrared band laser.Silicon nanometer sheet arteries and veins based on the utility model
Pulse modulator manufacture craft is simple and convenient for integrated feature, and complete based on silicon nanometer sheet pulse-modulator of the utility model is consolidated
State laser is easy to implement integrated design and integrates.
Preferred according to the utility model, first front cavity mirror and first outgoing mirror form resonant cavity, and described the
One front cavity mirror is plated with the deielectric-coating to laser wavelength high reflection, and first outgoing mirror is plated with Jie to the reflection of laser wavelength part
Plasma membrane.
Preferred according to the utility model, first pumping source is semiconductor laser diode (LD) or xenon lamp；It provides
Pump energy.
The first laser gain media is all solid dielectrics that can generate laser gain, is in cylindrical body or rectangular
Body, end face polish or are plated with the deielectric-coating for being conducive to Pumping light absorption and laser generation.For example, working as gain media Nd:YAG
When crystal is exported as 946nm wavelength, incident end face is coated with to the antireflective deielectric-coating of 808nm, 946nm, is emitted end face and is coated with pair
The antireflective deielectric-coating of 946nm.
It is further preferred that the first laser gain media is laser crystal, laser glass or laser ceramics.
Most preferably, the first laser gain media is that neodymium doped yttrium aluminum garnet (Nd:YAG) crystal or neodymium adulterate vanadium
Sour yttrium (Nd:YVO4) crystal.
The resonator parameter of above-mentioned all solid state laser can designed, designed, such as curvature of the hysteroscope of composition resonant cavity, output
Coupling transmitance of mirror etc., and total reflective mirror can be added according to actual needs to change lumen type, relevant design is well known in the art
Technology.
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping, including successively placed along optical path the second pumping source,
One fiber coupling system, the first focusing system, the second front cavity mirror, second laser gain media, the swashing based on silicon nanometer sheet
Light pulse modulator, the second outgoing mirror.
Based on silicon nanometer sheet material have the characteristic insensitive to wavelength, the utility model based on silicon nanometer sheet pulse tune
The passive Q-regulaitng laser of device processed can realize the Q-switch laser output to visible infrared band.Silicon based on the utility model is received
Rice piece pulse-modulator manufacture craft is simple and convenient for integrated feature, the utility model based on silicon nanometer sheet pulse-modulator
Passive Q-regulaitng laser be easy to implement integrated design and integrated.
Pump light is input to laser gain medium through the first fiber coupling system, the first focusing system and the second front cavity mirror
In, the laser of generation is through the Laser pulse modulator device modulation based on silicon nanometer sheet, from the second output Q-switched pulse in outgoing mirror one end.
Preferred according to the utility model, second front cavity mirror and second outgoing mirror form resonant cavity, described humorous
Vibration cavity length is 1-10cm.
It is further preferred that the cavity length is 1cm.In order to inhibit the generation of mode-locked laser, the resonant cavity is got over
It is short better, it is preferred with length 1cm.
Preferred according to the utility model, second pumping source is the laser diode (LD) that launch wavelength is 808nm；
Second front cavity mirror is plane mirror, is plated with close to the surface of one end of first focusing system and increases to 808nm
Saturating deielectric-coating, the surface close to the other end of the second laser gain media are plated with the medium to 1.05-1.1 μm of high reflection
Film；
The second laser gain media is Nd:YAG crystal；
Second outgoing mirror be plano-concave mirror, the concave surface of second outgoing mirror be plated with to 1.05-1.1 μm part reflection
Deielectric-coating, the plane of second outgoing mirror are plated with to 1.05-1.1 μm of antireflective deielectric-coating, the concave surface of second outgoing mirror
Radius of curvature be 20-1000mm.
A kind of end pumping laser with active-passive lock mould, including third pumping source, the second optical fiber coupling successively placed along optical path
It is collaboration system, the second focusing system, third front cavity mirror, third laser gain medium, plano-concave reflecting mirror, described based on silicon nanometer sheet
Laser pulse modulator device, third outgoing mirror.
Pump light is input to third laser gain through the second fiber coupling system, the second focusing system and third front cavity mirror and is situated between
In matter, produced laser is modulated after the reflection of plano-concave reflecting mirror by the Laser pulse modulator device based on silicon nanometer sheet, most afterwards through the
Three outgoing mirrors export mode locking pulse.
Based on silicon nanometer sheet material have the characteristic insensitive to wavelength, the utility model based on silicon nanometer sheet pulse tune
The end pumping laser with active-passive lock mould of device processed can realize the mode-locked laser output to visible infrared band.It is practical new based on this
The silicon nanometer sheet pulse-modulator manufacture craft of type is simple and convenient for integrated feature, the utility model based on silicon nanometer sheet arteries and veins
The end pumping laser with active-passive lock mould of pulse modulator is easy to implement integrated design and integrates.
It is preferred according to the utility model, the third front cavity mirror, the plano-concave reflecting mirror and the third outgoing mirror structure
At V-type resonant cavity.
Preferred according to the utility model, the third pumping source is the laser diode (LD) of launch wavelength 808nm；
The third front cavity mirror is plane mirror, is plated with close to the surface of one end of second focusing system and increases to 808nm
Saturating deielectric-coating, the surface close to one end of the third laser gain medium are plated with the medium to 1.05-1.1 μm of high reflection
Film；
The third laser gain medium is Nd:YVO4Crystal；The incident end face of the third laser gain medium is coated with
To 808nm, 1.05-1.1 μm of antireflective deielectric-coating, it is plated on the outgoing end face of the third laser gain medium to 1.05-
1.1 μm of antireflective deielectric-coating；
The concave surface of the plano-concave reflecting mirror is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The third outgoing mirror is plane mirror, is plated with close to the surface of V-type resonant cavity one end anti-to 1.05-1.1 μm
The part reflecting medium film that rate is 97% is penetrated, another end surfaces are plated with to 1.05-1.1 μm of antireflective deielectric-coating.
A kind of profile pump passive Q-regulaitng laser, including successively placed along optical path the 4th front cavity mirror, the 4th pumping source,
4th laser gain medium, the Laser pulse modulator device based on silicon nanometer sheet, the 4th outgoing mirror.
Pump light is inputted from the 4th laser gain medium side, and produced laser passes through the laser pulse tune based on silicon nanometer sheet
Again through the 4th output Q-switched pulse of outgoing mirror after device modulation processed.
Based on silicon nanometer sheet material have the characteristic insensitive to wavelength, the utility model based on silicon nanometer sheet pulse tune
The profile pump passive Q-regulaitng laser of device processed can realize the Q-switch laser output to visible infrared band.Based on the utility model
Silicon nanometer sheet pulse-modulator manufacture craft it is simple and convenient for integrated feature, the utility model based on silicon nanometer sheet pulse
The passive Q-adjusted laser of the profile pump of modulator is easy to implement integrated design and integrates.
Preferred according to the utility model, the 4th front cavity mirror, the 4th outgoing mirror form linear type resonant cavity.
Preferred according to the utility model, the 4th front cavity mirror is plane mirror, close to the 4th laser gain medium
The surface of one end be plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
4th pumping source is xenon lamp or the LD array module with profile pump function；
4th laser gain medium is Nd:YAG crystal；
4th outgoing mirror is plated with close to the end surface of the 4th laser gain medium reflects 1.05-1.1 μm
The deielectric-coating that rate is 60%, the other end are plated with to 1.05-1.1 μm of antireflective deielectric-coating；
The utility model has the following beneficial effects:
1, the utility model utilizes the characteristic of semiconductor of silicon nanometer sheet material, such material is under strong light action, for light
Absorption have saturated characteristic, continuous laser can be modulated as saturable absorber, generate pulse output.Silicon nanometer sheet
Material has the absorption characteristic insensitive to wavelength, it can be achieved that from visible infrared broadband Laser Modulation, plays general open
The effect of pass.
2, manufacture craft is simple, low in cost, is suitable for batch production.The production raw material of silicon nanometer sheet can select clay, and
Clay is the generally existing substance of nature.Silicon nanometer sheet has preparation method (vapor deposition, liquid phase stripping of comparative maturity simultaneously
From or mechanical stripping).
3, convenient for integrated, silicon nanometer sheet material can be prepared on substrate film with mature technique, and stone can be selected in substrate
The a variety of materials such as English, sapphire, the size of size depend on the size of substrate.It can also be directly in outgoing mirror or laser material
Upper deposition convenient for material devices integrated design and integrates.It, should just because of convenient and insensitive to the substrate characteristic of its preparation
Class modulation device have can industrialization and batch production potentiality.
Detailed description of the invention
Fig. 1 is the experimental provision of the saturable absorption characteristic of test silicon nanometer sheet in embodiment 1；
Fig. 2 is the result schematic diagram of the saturable absorption when optical maser wavelength is 532nm；
Fig. 3 is the result schematic diagram of the saturable absorption when optical maser wavelength is 1064nm；
Fig. 4 is a kind of structural schematic diagram of the silicon nanometer sheet passive Q-regulaitng laser of end pumping in embodiment 7；
Fig. 5 (a) is the average output power signal of Q-switched laser in embodiment 6 when laser work wavelength is 946nm
Figure；
Fig. 5 (b) is the pulse width schematic diagram of Q-switched laser in embodiment 6 when laser work wavelength is 946nm；
Fig. 5 (c) is the repetition rate schematic diagram of Q-switched laser in embodiment 6 when laser work wavelength is 946nm；
Fig. 5 (d) is when laser work wavelength is 946nm, and the pulse train of Q-switched laser and waveform show in embodiment 6
It is intended to；
Fig. 6 (a) is the average output power signal of Q-switched laser in embodiment 7 when laser work wavelength is 1.06 μm
Figure；
Fig. 6 (b) is the pulse width signal when laser work wavelength is 1.06 μm, in embodiment 7 in Q-switched laser
Figure；
Fig. 6 (c) is the repetition rate schematic diagram of Q-switched laser in embodiment 7 when laser work wavelength is 1.06 μm；
Fig. 6 (d) is when laser work wavelength is 1.06 μm, and the pulse train of Q-switched laser and waveform show in embodiment 7
It is intended to；
Fig. 7 (a) is the average output power signal of Q-switched laser in embodiment 8 when laser work wavelength is 1.34 μm
Figure；
Fig. 7 (b) is the pulse width schematic diagram of Q-switched laser in embodiment 8 when laser work wavelength is 1.34 μm；
Fig. 7 (c) is the repetition rate schematic diagram of Q-switched laser in embodiment 8 when laser work wavelength is 1.34 μm；
Fig. 7 (d) is when laser work wavelength is 1.34 μm, and the pulse train of Q-switched laser and waveform show in embodiment 8
It is intended to；
Fig. 8 is the structural schematic diagram of end pumping laser with active-passive lock mould described in embodiment 9；
Fig. 9 is a kind of xenon lamp profile pump silicon nanometer sheet passive Q-regulaitng laser structural schematic diagram of embodiment 10；
1, pumping source, 2, spectroscope, 3, silicon nanometer sheet suspension 4, the first energy meter, the 5, second energy meter, the 6, second pump
Pu source, the 7, first fiber coupling system, the 8, first focusing system, the 9, second front cavity mirror, 10, second laser gain media, 11, silicon
Nanometer sheet Laser pulse modulator device, the 12, second outgoing mirror, 13, third pumping source, the 14, second fiber coupling system, 15, second
Focusing system, 16, third front cavity mirror, 17, third laser gain medium, 18, plano-concave reflecting mirror, 19, third outgoing mirror, 20,
Four front cavity mirrors, the 21, the 4th pumping source, the 22, the 4th laser gain medium, the 23, the 4th outgoing mirror.
Specific embodiment
The utility model is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of Laser pulse modulator device based on silicon nanometer sheet including substrate and is deposited on substrate the silicon Nano sheet material in face
Material.
Substrate with a thickness of 0.5-3mm；Silicon nanometer sheet material with a thickness of 1-50nm.
Substrate is the crystal, glass or ceramic material to laser light used.
We have found that the suspension of silicon nanometer sheet has strong saturable absorption special in non-linear penetrate in test for the first time
Property, i.e., in low light irradiation, transmitance is lower, and transmitance significantly improves in strong illumination.Experimental provision is as shown in Figure 1, packet
It (is mixed with ethyl alcohol containing pumping source 1, spectroscope 2, silicon nanometer sheet suspension 3, is placed on the twin polishing quartz ratio with a thickness of 1mm
In color ware), the first energy meter 4, the second energy meter 5.Pumping source 1 is electric-optically Q-switched Nd:YAG pulse laser (wavelength
1064nm, pulse width 19ns, wavelength 532nm, pulse width 16ns, working frequency 10Hz after frequency multiplication), spectroscope 2 will pump
The outgoing beam in source 1 is divided into two bundles, and through being radiated on the first energy meter 4 after silicon nanometer sheet suspension 3, light beam two shines light beam one
It penetrates on the second energy meter 5 as reference beam.
In experimentation, it is gradually increased the projectile energy of pumping source laser, beam energy density gradually rises.Pass through monitoring
The data of energy meter 4 and energy meter 5, obtain transmitance of the silicon nanometer sheet under different capacity density, experimental result such as Fig. 2 and
Shown in Fig. 3.In Fig. 2, when incident wavelength is 532nm, with the increase of incident optical power density, the transmission of silicon nanometer sheet suspension
Rate is gradually increased, and shows that silicon nanometer sheet suspension has saturable absorption phenomenon in 532nm；In Fig. 3, incident wavelength 1064nm
When, with the increase of incident optical power density, the transmitance of silicon nanometer sheet suspension is gradually increased, and shows that silicon nanometer sheet suspension exists
1064nm has saturable absorption phenomenon.For the two wavelength, ethyl alcohol (is placed on the twin polishing quartz ratio with a thickness of 1mm
In color ware) do not have saturable absorption phenomenon under same experimental conditions.Show that silicon nanometer sheet has broadband saturable absorption
Characteristic can be used as passive modulation element and generate short pulse, high-peak power laser.
Embodiment 2
According to a kind of Laser pulse modulator device based on silicon nanometer sheet described in embodiment 1, difference is,
Substrate with a thickness of 2mm；Silicon nanometer sheet material with a thickness of 5nm.
Substrate is quartz substrate or Sapphire Substrate.
Be conducive to the deielectric-coating of laser generation in substrate back plating.The deielectric-coating for being conducive to laser generation can be according to pulse
The factors such as requirement when modulation device is applied, realizes the variable controllable of reflectivity, and reflectivity is immutable when overcoming not plated film are brought
The shortcomings that, be conducive to the design of pulse laser.
Laser pulse modulator device described in the utility model based on silicon nanometer sheet, can be prepared into arbitrary shape, preferably
, the Laser pulse modulator device based on silicon nanometer sheet is rectangle or circle.
The application of the Laser pulse modulator device based on silicon nanometer sheet of the utility model, for visible or infrared laser into
Row impulse modulation, including passive Q-adjusted or passive mode-locking.
Embodiment 3
A kind of all solid state laser based on silicon nanometer sheet pulse-modulator, including the first pumping successively placed along optical path
Source, the first front cavity mirror, first laser gain media, the Laser pulse modulator device as described in example 2 based on silicon nanometer sheet, first
Outgoing mirror.Silicon nanometer sheet Laser pulse modulator device is put in resonant cavity, is formed and adjusts Q or mode-locked laser output.
First front cavity mirror and the first outgoing mirror form resonant cavity, and the first front cavity mirror is plated with the medium to laser wavelength high reflection
Film, the first outgoing mirror are plated with the deielectric-coating to the reflection of laser wavelength part.
First pumping source is semiconductor laser diode (LD) or xenon lamp；Pump energy is provided.
First laser gain media be all solid dielectrics that can generate laser gain, be in cylindrical body or cuboid,
End face polishes or is plated with the deielectric-coating for being conducive to Pumping light absorption and laser generation；
The resonator parameter of all solid state laser can designed, designed, such as song of the hysteroscope of composition resonant cavity in the embodiment
Rate, coupling transmitance of outgoing mirror etc., and total reflective mirror can be added according to actual needs to change lumen type, relevant design is this field
Well known technology.
Embodiment 4
According to a kind of all solid state laser based on silicon nanometer sheet pulse-modulator described in embodiment 3, difference is,
First laser gain media is laser crystal, laser glass or laser ceramics.When gain media Nd:YAG crystal
When as the output of 946nm wavelength, incident end face is coated with to the antireflective deielectric-coating of 808nm, 946nm, is emitted end face and is coated with pair
The antireflective deielectric-coating of 946nm；When gain media uses Nd:YAG crystal to export as 1.06 mum wavelengths, incident end face is coated with pair
808nm, 1.06 μm of antireflective deielectric-coating, outgoing end face are coated with to 1.06 μm of antireflective deielectric-coating；As gain media Nd:YAG
When crystal is exported as 1.34 mum wavelengths, incident end face is coated with to 808nm, 1.34 μm of antireflective deielectric-coating, is emitted end face and is coated with
To 1.34 μm of antireflective deielectric-coating.
Embodiment 5
According to a kind of all solid state laser based on silicon nanometer sheet pulse-modulator described in embodiment 3, difference is,
First laser gain media is neodymium doped yttrium aluminum garnet (Nd:YAG) crystal or neodymium doped yttrium vanadate (Nd:YVO4)
Crystal.
Embodiment 6
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping, as shown in figure 4, including successively placed along optical path
Two pumping sources 6, the first focusing system 8, the second front cavity mirror 9, second laser gain media 10, are implemented first fiber coupling system 7
Laser pulse modulator device 11, the second outgoing mirror 12 described in example 2 based on silicon nanometer sheet.
Pump light is input to second laser through the first fiber coupling system 7, the first focusing system 8 and the second front cavity mirror 9 and increases
In beneficial medium 10, the laser of generation is modulated through the Laser pulse modulator device 11 based on silicon nanometer sheet, from 12 one end of the second outgoing mirror
Output Q-switched pulse.
Second front cavity mirror 9 and the second outgoing mirror 12 form resonant cavity, cavity length 27mm.
Second pumping source 6 is the laser diode (LD) that launch wavelength is 808nm；
Second front cavity mirror 9 is plane mirror, and the second front cavity mirror 9 is plated with pair close to the surface of 8 one end of the first focusing system
The antireflective deielectric-coating of 808nm, 1064nm, the second front cavity mirror 9 are plated with pair close to the surface of 10 one end of second laser gain media
0.9-1.0 μm of high reflection, the deielectric-coating of 1064 nm high transmissions.
Second laser gain media 10 is Nd:YAG crystal, Nd3+Ion concentration is 0.4at.%；Incident end face is coated with pair
808nm, the antireflective deielectric-coating of 946 nm, 1064nm are emitted on end face and are plated with to the antireflective deielectric-coating of 946nm, 1064nm.
Second outgoing mirror 12 is plano-concave mirror, and diameter 20mm, radius of curvature 50mm, the concave surface of the second outgoing mirror 12 is plated with
The deielectric-coating that, 0.9-1.0 μm part anti-reflection to 1064nm is reflected, reflectivity is 95% at 946nm, the second outgoing mirror 12
The surface of the other end is plated with to 1064nm, 0.9-1.0 μm of antireflective deielectric-coating
When laser work wavelength is 946nm, the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping is averaged
Shown in output power such as Fig. 5 (a), maximum average output power 163mW.
Shown in pulse width such as Fig. 5 (b) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, most narrow arteries and veins
Width is 200.2ns.
Shown in repetition rate such as Fig. 5 (c) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, highest weight
Complex frequency 294.5kHz.
The pulse train and single pulse waveforms such as Fig. 5 (d) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping
It is shown.
Embodiment 7
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping according to embodiment 6 is distinguished and is,
Second front cavity mirror 9 is plated with close to the surface of 8 one end of the first focusing system to the antireflective deielectric-coating of 808nm, before second
Hysteroscope 9 is plated with the deielectric-coating to 1.05-1.1 μm of high reflection close to the surface of 10 one end of second laser gain media.
Second outgoing mirror 12 is plano-concave mirror, diameter 20mm, radius of curvature 100mm, the concave surface plating of the second outgoing mirror 12
With the deielectric-coating to 1.05-1.1 μm of part reflection, reflectivity is 90% at 1064nm.The other end of second outgoing mirror 12
Surface is plated with to 1.05-1.1 μm of antireflective deielectric-coating.
Second front cavity mirror 9 and the second outgoing mirror 12 form resonant cavity, cavity length 25mm；
When laser work wavelength is 1.06 μm, the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping is put down
Shown in equal output power such as Fig. 6 (a), maximum average output power 131mW.
Shown in pulse width such as Fig. 6 (b) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, most narrow arteries and veins
Width is 103.7 ns.
Shown in repetition rate such as Fig. 6 (c) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, highest weight
587 kHz of complex frequency.
The pulse train and single pulse waveforms such as Fig. 6 (d) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping
It is shown.
Embodiment 8
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping according to embodiment 6 is distinguished and is,
Second front cavity mirror 9 is plated with close to the surface of 8 one end of the first focusing system to the antireflective deielectric-coating of 808nm, 1064nm,
Second front cavity mirror 9 is plated with close to the surface of 10 one end of second laser gain media to 1.3-1.4 μm of high reflection, 1064nm high transmission
Deielectric-coating.
Second laser gain media 10 is Nd:YVO4Crystal, Nd3+Ion concentration is 0.5at.%；Incident end face is coated with pair
808nm, 1064 nm, 1.34 μm of antireflective deielectric-coating, outgoing end face are coated with to 1064nm, 1.34 μm of antireflective deielectric-coating.
Second outgoing mirror 12 is plano-concave mirror, diameter 20mm, radius of curvature 100mm, the concave surface plating of the second outgoing mirror 12
With the deielectric-coating that, 1.3-1.4 μm part anti-reflection to 1064nm is reflected, reflectivity is 90% at 1342nm, the second outgoing mirror 12
The surface of the other end be plated with to 1064nm, 1.3-1.4 μm of antireflective deielectric-coating.
When laser work wavelength is 1.34 μm, the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping is put down
Shown in equal output power such as Fig. 7 (a), maximum average output power 79mW.
Shown in pulse width such as Fig. 7 (b) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, most narrow arteries and veins
Width is 110.4 ns.
Shown in repetition rate such as Fig. 7 (c) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, highest weight
570 kHz of complex frequency.
The pulse train and single pulse waveforms such as Fig. 7 (d) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping
It is shown.
Embodiment 9
A kind of end pumping laser with active-passive lock mould, as shown in figure 8, including the third pumping source successively placed along optical path
13, the second fiber coupling system 14, the second focusing system 15, third front cavity mirror 16, third laser gain medium 17, plano-concave reflection
Mirror 18, the Laser pulse modulator device 11 as described in example 2 based on silicon nanometer sheet, third outgoing mirror 19.
Pump light is input to third laser through the second fiber coupling system 14, the second focusing system 15 and third front cavity mirror 16
In gain media 17, produced laser is after the reflection of plano-concave reflecting mirror 18 by the Laser pulse modulator device 11 based on silicon nanometer sheet
Modulation most exports mode locking pulse through third outgoing mirror 19 afterwards.
Third front cavity mirror 16, plano-concave reflecting mirror 18 and third outgoing mirror 19 constitute V-type resonant cavity.
Third pumping source 13 is the laser diode (LD) of launch wavelength 808nm；
Third front cavity mirror 16 is the plane mirror of diameter 20mm, and the end surface close to the second focusing system 15 is plated with pair
The antireflective deielectric-coating of 808nm, the surface of the other end are plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
Third laser gain medium 17 is Nd:YVO4Crystal, incident end face are coated with to the antireflective medium of 808nm, 1064nm
Film is emitted on end face and is plated with to the antireflective deielectric-coating of 1064nm；
The concave surface of plano-concave reflecting mirror 18 is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
Third outgoing mirror 19 is flat output mirror, and the end surface of close V-type resonant cavity is plated with is to 1064nm reflectivity
97% part reflecting medium film, another end surfaces are plated with to the antireflective deielectric-coating of 1064nm.
Embodiment 10
A kind of xenon lamp profile pump silicon nanometer sheet passive Q-regulaitng laser, as shown in figure 9, including successively being placed along optical path
4th front cavity mirror 20, the 4th pumping source 21, the 4th laser gain medium 22, the laser as described in example 2 based on silicon nanometer sheet
Pulse-modulator 11, the 4th outgoing mirror 23.
Pump light is inputted from 22 side of the 4th laser gain medium, and produced laser passes through the laser pulse based on silicon nanometer sheet
Again through the output Q-switched pulse of the 4th outgoing mirror 23 after the modulation of modulator 11.
4th front cavity mirror 20, the 4th outgoing mirror 23 form linear type resonant cavity.
4th front cavity mirror 20 is plane mirror, and the surface close to one end of the 4th laser gain medium 22 is plated with to 1.05-1.1
The deielectric-coating of μm high reflection；
4th pumping source 21 is xenon lamp；
4th laser gain medium 22 is Nd:YAG crystal；
It is 60% that 4th outgoing mirror 23, which is plated with close to 22 end surface of the 4th laser gain medium to 1064nm reflectivity,
Deielectric-coating, the other end are plated with to the antireflective deielectric-coating of 1064nm.
The output of 1064nm Q-switch laser can be achieved by the modulation of silicon nanometer sheet pulse-modulator 12.
Claims (9)
1. a kind of Laser pulse modulator device based on silicon nanometer sheet, which is characterized in that over the substrate including substrate and deposition
The silicon nanometer sheet material in face；
The substrate with a thickness of 0.5-3mm；The silicon nanometer sheet material with a thickness of 1-50nm；The substrate is crystal, glass
Glass or ceramic material；The substrate back is plated with the deielectric-coating for being conducive to laser generation.
2. a kind of Laser pulse modulator device based on silicon nanometer sheet according to claim 1, which is characterized in that the substrate
With a thickness of 2mm；The silicon nanometer sheet material with a thickness of 5nm；The substrate is quartz substrate or Sapphire Substrate.
3. a kind of all solid state laser based on silicon nanometer sheet pulse-modulator, which is characterized in that including successively being placed along optical path
The first pumping source, the first front cavity mirror, first laser gain media, claim 1-2 it is any described based on silicon nanometer sheet
Laser pulse modulator device, the first outgoing mirror.
4. a kind of all solid state laser based on silicon nanometer sheet pulse-modulator according to claim 3, which is characterized in that
First front cavity mirror and first outgoing mirror form resonant cavity, and first front cavity mirror is plated with to laser wavelength high reflection
Deielectric-coating, first outgoing mirror are plated with the deielectric-coating to the reflection of laser wavelength part；
First pumping source is semiconductor laser diode or xenon lamp；
The first laser gain media be all solid dielectrics that can generate laser gain, be in cylindrical body or cuboid,
End face polishes or is plated with the deielectric-coating for being conducive to Pumping light absorption and laser generation.
5. a kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping, which is characterized in that including successively placed along optical path second
Pumping source, the first fiber coupling system, the first focusing system, the second front cavity mirror, second laser gain media, claim 1-2
Any Laser pulse modulator device based on silicon nanometer sheet, the second outgoing mirror.
6. a kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping according to claim 5, which is characterized in that described
Second front cavity mirror and second outgoing mirror form resonant cavity, and the cavity length is 1-10cm；
Second pumping source is the laser diode that launch wavelength is 808nm；
Second front cavity mirror is plane mirror, is plated with close to the surface of one end of first focusing system antireflective to 808nm
Deielectric-coating, the surface close to the other end of the second laser gain media are plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The second laser gain media is Nd:YAG crystal；
Second outgoing mirror is plano-concave mirror, and the concave surface of second outgoing mirror is plated with the medium to 1.05-1.1 μm of part reflection
Film, the plane of second outgoing mirror are plated with to 1.05-1.1 μm of antireflective deielectric-coating, the song of the concave surface of second outgoing mirror
Rate radius is 20-1000mm.
7. a kind of end pumping laser with active-passive lock mould, which is characterized in that including successively placed along optical path third pumping source,
Two fiber coupling systems, the second focusing system, third front cavity mirror, third laser gain medium, plano-concave reflecting mirror, claim 1-
2 any Laser pulse modulator devices based on silicon nanometer sheet, third outgoing mirror.
8. a kind of end pumping laser with active-passive lock mould according to claim 7, which is characterized in that the third ante-chamber
Mirror, the plano-concave reflecting mirror and the third outgoing mirror constitute V-type resonant cavity；
The third pumping source is the laser diode of launch wavelength 808nm；
The third front cavity mirror is plane mirror, is plated with close to the surface of one end of second focusing system antireflective to 808nm
Deielectric-coating, the surface close to one end of the third laser gain medium are plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The third laser gain medium is Nd:YVO4Crystal；The incident end face of the third laser gain medium is coated with pair
808nm, 1.05-1.1 μm of antireflective deielectric-coating are plated with to 1.05-1.1 μm on the outgoing end face of the third laser gain medium
Antireflective deielectric-coating；
The concave surface of the plano-concave reflecting mirror is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The third outgoing mirror is plane mirror, and the surface close to V-type resonant cavity one end is plated with to 1.05-1.1 μm of reflectivity
For 97% part reflecting medium film, another end surfaces are plated with to 1.05-1.1 μm of antireflective deielectric-coating.
9. a kind of profile pump passive Q-regulaitng laser, which is characterized in that including successively placed along optical path the 4th front cavity mirror,
Any Laser pulse modulator device based on silicon nanometer sheet of four pumping sources, the 4th laser gain medium, claim 1-2,
4th outgoing mirror；
4th front cavity mirror, the 4th outgoing mirror form linear type resonant cavity；
4th front cavity mirror is plane mirror, and the surface close to one end of the 4th laser gain medium is plated with to 1.05-1.1
The deielectric-coating of μm high reflection；
4th pumping source is xenon lamp or the LD array module with profile pump function；
4th laser gain medium is Nd:YAG crystal；
4th outgoing mirror is plated with close to the end surface of the 4th laser gain medium
60% deielectric-coating, the other end are plated with to 1.05-1.1 μm of antireflective deielectric-coating.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108199254A (en) * | 2018-02-11 | 2018-06-22 | 山东大学 | A kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application |
| CN113437630A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Based on 1T-TaS2And its application in laser |
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2018
- 2018-03-01 CN CN201820288006.7U patent/CN208189972U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108199254A (en) * | 2018-02-11 | 2018-06-22 | 山东大学 | A kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application |
| CN113437630A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Based on 1T-TaS2And its application in laser |
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