CN101908713B - Graphene optical Q-switch and application - Google Patents
Graphene optical Q-switch and application Download PDFInfo
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- CN101908713B CN101908713B CN2010102428650A CN201010242865A CN101908713B CN 101908713 B CN101908713 B CN 101908713B CN 2010102428650 A CN2010102428650 A CN 2010102428650A CN 201010242865 A CN201010242865 A CN 201010242865A CN 101908713 B CN101908713 B CN 101908713B
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 64
- 230000003287 optical effect Effects 0.000 title claims abstract description 20
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000010355 oscillation Effects 0.000 claims abstract description 4
- 230000009286 beneficial effect Effects 0.000 claims abstract description 3
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 15
- 238000005086 pumping Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 21
- 239000000463 material Substances 0.000 abstract description 13
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000007747 plating Methods 0.000 description 7
- 239000006096 absorbing agent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 239000000087 laser glass Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention relates to a pulsed laser based on a graphene optical Q-switch, which includes a pump source, a front endoscope, a laser gain medium and the graphene Q-switch using silicon carbide as a substrate. The core of the invention is the graphene optical Q-switch, including a SiC substrate and a grapheme material growing on the SiC substrate. One surface carrying the grapheme faces the inner side of the laser cavity while the other surface faces the outer side of the laser cavity. The graphene optical Q-switch is used in the laser. The oscillation light passes the graphene optical Q-switch after passing the laser gain medium. The SiC substrate is used as an output mirror and forms a resonant cavity with the front endoscope in front of the laser gain medium. The invention can adjust loss of laser generated by visible light, infrared or ultraviolet light. The core Q-switch of the invention has the advantages of simple preparation, low cost, achievable adjustment of laser with large wavelength range and is beneficial to industrialized production and the like.
Description
Technical field
The present invention relates to laser device field, particularly based on the pulse laser of graphene optical Q-switch.
Background technology
Graphene has the two-dimensional structure that the stratiform atom is arranged, and is one type zero bandgap semiconductor material.When low-power illumination is mapped on the Graphene; Can be on valence band and conduction band formation electronics and hole right; Electronics and hole redistribute on conduction band and the valence band respectively afterwards; Electronics and hole can reconfigure after distributing, and form the distribution when not shining, the linear absorption process of Here it is Graphene., light can repeat above process when shining again.Yet when high light shone, the electronics in its valence band can all transit to conduction band, form to distribute at conduction band, thereby can not absorb this light again, just this light was kept higher transmittance, the saturable absorption characteristic of Here it is this material.This saturable absorption characteristic makes this material can be used as modulation element laser is modulated, and produces pulse laser.Semiconductor saturable absorber commonly used mainly contains saturable absorbing mirror (SESAM) and two kinds of devices of GaAs (GaAs); These two kinds of devices are except manufacture craft very the complicacy; Also very responsive to wavelength, its absorption differs greatly for different wavelengths, does not even absorb; When using, need design according to different wavelengths, this has just brought very big inconvenience to its making and application.
Summary of the invention
The present invention is directed to the deficiency of prior art, a kind of pulse laser based on graphene optical Q-switch is provided, utilize saturable absorption characteristic that grapheme material has and, process the Q-switch device with grapheme material to the insensitive characteristics of wavelength.
Technical scheme of the present invention is following:
A kind of pulse laser based on graphene optical Q-switch; Comprise the SiC substrate and be grown in the grapheme material above the SiC substrate; The one side that is loaded with Graphene is in laser cavity; The another side that is not loaded with Graphene outside laser cavity, with Graphene as Q switched element, simultaneously with the SiC substrate as outgoing mirror.
Preferably, the one side plating that on the SiC substrate, is not loaded with Graphene is to help the deielectric-coating of laser generation.This deielectric-coating can be when using requirement, change the reflectivity of oscillation light, the shortcoming that factor such as reflectivity is immutable when overcoming plated film is not brought helps the design of pulse laser.
The said grapheme material that is grown in above the SiC substrate, its growth number of plies is the 1-40 layer.Its preparation method adopts the epitaxy growth to obtain for being substrate with 6H carborundum, and growing method is by prior art; For example " preparation of the epitaxial growth of carborundum films, structural characterization and Graphene ", China Science & Technology University, doctorate paper; Liu is faithful and upright, 102 pages.The preferred Graphene number of plies is the 1-30 layer, more preferably the 10-30 layer.
Described graphene optical Q-switch device can be processed into arbitrary shape, preferably rectangle or circle.But whatsoever the graphene optical Q-switch of shape all need the to grow face of Graphene needs the gain medium in laser cavity, and another side is outside the chamber.Make this Q-switch that the loss in the chamber is modulated like this, realize simultaneously laser is exported.
A kind of pulse laser based on graphene optical Q-switch of the present invention is loaded with the gain medium of one side in laser cavity of Graphene, and the another side that is not loaded with Graphene is outside laser cavity; Adopt the mode of end face or profile pump; Pump light is input in the gain medium; Said pump light through behind the gain medium again through the Graphene Q switched element, form resonant cavity with the SiC substrate of Graphene Q switched element one as outgoing mirror and the front cavity mirror that places the gain medium front.Said front cavity mirror is coated with the deielectric-coating that is beneficial to laser generation.
In order to suppress the generation of mode-locked laser, said resonant cavity is short more good more; In order to obtain stable Q-switch laser more easily, the hot spot ratio on said gain medium and the Graphene is the bigger the better, wherein the preferred 10-100 of hot spot ratio on gain medium and the Graphene (can obtain through the cavity modes computing formula).
Described gain medium be semiconductor, laser crystal, laser ceramics or laser glass etc. all can produce the medium of laser gain; Be processed into cylindrical or cuboid; Its end face plates with the absorption that helps pump light and the deielectric-coating of laser generation, also can be not plated film of finishing polish.Preferably, described gain medium is the Nd:YAG crystal, Nd
3+Ion concentration is 0.01-0.10at..
Described pumping source is the light source that semiconductor laser diode (LD) or xenon lamp etc. can provide pump energy.
The deielectric-coating of the input mirror of described front cavity mirror can directly be plated on gain medium apart from the Graphene face far away, and another face can plate to help the deielectric-coating that laser generation and pump light absorb, also plated film not.
Described front cavity mirror is that a radius is the plano-concave mirror of 10-1000mm, and the concave surface plating is with the deielectric-coating to the high reflection of 1.05-1.1 μ m, and the distance between front cavity mirror and the Q-switch is 1-10cm.
A kind of pulse laser provided by the invention based on graphene optical Q-switch, have make simple, cost is low, can realize wavelength in a big way inner laser adjusting, help characteristics such as industrialization production.
Graphene Q-switch provided by the invention can be used for generation visible light, laser infrared or ultraviolet are carried out the adjusting of loss, has comprised the laser that semiconductor, laser crystal, laser ceramics and laser glass produce.Can realize modulation to LD or xenon flash lamp pumping laser.
The SiC crystal has big thermal conductivity (490W/mK) and refractive index (being about 2.6); Its reflectivity is about 40% during normal incidence; Can be used as the output cavity mirror of laser, realize laser output, and have the saturable absorption characteristic at its epontic Graphene; The combination of two aspects makes it when using, and has realized the integrated of outgoing mirror and saturable absorber.During the Q-switch device application of making based on the grapheme material of growing on the SiC substrate, have following advantage:
1. insensitive to wavelength.Graphene has planar structure, is zero bandgap semiconductor, and these characteristics have determined said material to have the insensitive characteristic of wavelength, can realize being one type of " general " switch to the modulation of ultraviolet to infrared band laser.
2. the characteristics that have miniaturization, compoundization of function.Based on the grapheme material of SiC substrate, its surperficial Graphene has the saturable absorption characteristic, and its SiC substrate has the output cavity mirror realization pulse laser output that big refractive index can be used as laser.Therefore, this device has been realized the integrated of saturable absorber and outgoing mirror, has the characteristics of miniaturization and compoundization of function.
3. help industrialization, produce in batches.Grapheme material prepares as substrate with SiC, and the size of its size is decided by the size of its substrate.At present, the industrialization of large-sized SiC material, its size can reach more than 3 inches, and this has determined this Q switching can carry out large-area making, can directly cut application according to different demands.
Description of drawings
Fig. 1 is the pictorial diagram of the Graphene of growing on the silicon carbide substrates involved in the present invention.
Fig. 2 is the structural representation of Graphene Q-switch of the present invention, wherein, and 1. Graphene, 2.SiC substrate.
Fig. 3 is the LD end pumping, based on the pulse laser structural representation of Graphene Q-switch, wherein, 3. pumping source, 4. fiber coupling system, 5. focusing system, 6. front cavity mirror, 7. gain medium, 8. Graphene Q-switch.
Fig. 4 is the xenon lamp profile pump, based on the pulse laser structural representation of Graphene Q-switch, wherein, 9. front cavity mirror, 10. xenon lamp, 11. gain mediums, 12. Graphene Q-switchs.
Embodiment
Below in conjunction with embodiment the present invention is done to further describe, but be not limited thereto.
The Graphene of growing on silicon carbide substrates photo in kind is as shown in Figure 1, and its preparation method adopts the epitaxy growth to obtain for being substrate with 6H carborundum, its growing method such as China Science & Technology University, the doctorate paper, Liu is faithful and upright, 102 pages put down in writing.Selecting the Graphene number of plies for use is the 10-30 layer, can Q-switch be cut to rectangle or circle according to the needs of using.The structural representation of the Graphene Q-switch of rectangle is as shown in Figure 2.
Utilize emission wavelength for 808nm laser as pumping source, with the Nd:YAG crystal as gain medium, adopt cavity configuration as shown in Figure 3 to process pulse laser.This laser comprises: laser diode as pumping source (3), Nd:YAG crystal (6) as gain medium, coupled system (4,5), front cavity mirror (6) and Q-switch of the present invention (8) five parts.The Nd of this Nd:YAG crystal wherein
3+Ion concentration is 0.01-0.10at..The pump light incident end face of Nd:YAG crystal is coated with 808nm and deielectric-coating that 1.05-1.1 mu m waveband height is seen through; The deielectric-coating that plating is passed through 1.05-1.1 mu m waveband height on output end face; Front cavity mirror (6) is that a radius is the plano-concave mirror of 100-500mm, plane plating with to 808 highly pass through, the concave surface plating is with the deielectric-coating to the high reflection of 1.05-1.1 μ m, the long face that Graphene is arranged of Q-switch (8) is in resonant cavity; The number of plies of Graphene is the 10-20 layer, and another side is plated film not.Distance between front cavity mirror (6) and the Q switched element (8) is 1cm.Strengthen pump power, can directly export pulse laser output.Below the pulse duration≤100ns of pulse laser, average output power>=500mW, repetition rate>=100kHz.
Embodiment 3:
Of embodiment 2, different is does not grow the face plating of Graphene to help the deielectric-coating of laser generation on the SiC of the Q-switch that the present invention relates to substrate.
Embodiment 4:
Utilize xenon lamp as pumping source, with the Nd:YAG crystal as gain medium, adopt cavity configuration as shown in Figure 4 to process pulse laser.This laser comprises: xenon lamp is as pumping source (10), Nd:YAG crystal (11), front cavity mirror (9) and Q-switch of the present invention (12) four parts.The Nd of this Nd:YAG crystal wherein
3+Ion concentration is 0.01-0.10at..The Nd:YAG crystal is processed into cylindrical or rectangular build; Its two end faces are coated with the deielectric-coating that 1.05-1.1 mu m waveband height is seen through; Wherein front cavity mirror (9) is that a radius is the plano-concave mirror of 500-1000mm, and concave surface is coated with the deielectric-coating to the high reflection of 1.05-1.1 μ m, and the long face that Graphene is arranged of Q-switch of the present invention (12) is in resonant cavity; The number of plies of Graphene is the 10-15 layer, and SiC substrate length has not plated film of Graphene another side.Distance between front cavity mirror (9) and the Q-switch (12) is 10cm.Strengthen pump power, can directly export pulse laser output.
Embodiment 5: of embodiment 4, the face plating of the Graphene of not growing of the Q-switch that different is the present invention relates to is to help the deielectric-coating of laser generation.
Certainly; The present invention also can have other various embodiments; Under the situation that does not deviate from spirit of the present invention and essence thereof; Those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (3)
1. pulse laser based on graphene optical Q-switch; Comprise pumping source, front cavity mirror, gain medium and with the graphene optical Q-switch of carborundum as substrate; It is characterized in that: the mode that adopts end face or profile pump; Pump light is injected gain medium produce oscillation light, oscillation light is through produce pulse laser through graphene optical Q-switch behind the gain medium again; Said graphene optical Q-switch comprises the SiC substrate and is grown in the Graphene above the SiC substrate; Be loaded with the gain medium of one side in laser cavity of Graphene; The another side that is not loaded with Graphene outside laser cavity, with Graphene as Q switched element, with the SiC substrate as outgoing mirror; Said outgoing mirror forms resonant cavity with the front cavity mirror that places the gain medium front, and said front cavity mirror is coated with the deielectric-coating that is beneficial to laser generation;
Wherein, The Graphene growth number of plies above the said SiC of the being grown in substrate is the 10-20 layer; Described gain medium is the Nd:YAG crystal, and the crystal both ends of the surface are coated with the deielectric-coating that 1.05-1.1 μ m height is seen through, and said front cavity mirror is that a radius is the plano-concave mirror of 100-1000mm; Concave surface is coated with the deielectric-coating to the high reflection of 1.05-1.1 μ m, and the distance between said front cavity mirror and the said graphene optical Q-switch is 1-10cm.
2. a kind of pulse laser based on graphene optical Q-switch as claimed in claim 1 is characterized in that: the Nd3+ ion concentration of said Nd:YAG crystal is 0.01-0.10at.
3. a kind of pulse laser based on graphene optical Q-switch as claimed in claim 1 is characterized in that: said pumping source is semiconductor laser diode or xenon lamp.
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| CN2010102428650A CN101908713B (en) | 2010-08-03 | 2010-08-03 | Graphene optical Q-switch and application |
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| CN2010102428650A CN101908713B (en) | 2010-08-03 | 2010-08-03 | Graphene optical Q-switch and application |
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| CN101908713B true CN101908713B (en) | 2012-01-04 |
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Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102208743B (en) * | 2011-04-21 | 2013-03-06 | 北京工业大学 | Passive mode-locking laser based on graphite alkene having epitaxial growth on SiC substrate |
| CN102227044B (en) * | 2011-05-17 | 2013-01-23 | 北京工业大学 | Grapheme passively Q-switched nanosecond pulse fiber laser |
| CN102306894A (en) * | 2011-08-18 | 2012-01-04 | 厦门大学 | Graphene-based multi-wavelength Q-modulation rare-earth-doped fiber laser |
| CN102368585A (en) * | 2011-09-16 | 2012-03-07 | 北京工业大学 | High-repetition-frequency passive-mode-locking ultrashort-pulse all-fiber laser |
| CN102368584A (en) * | 2011-09-16 | 2012-03-07 | 北京工业大学 | Passive mode-locking ultrashort pulse all-fiber laser with waveband of 2.0 microns |
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| US9513527B2 (en) * | 2014-01-14 | 2016-12-06 | E Ink California, Llc | Color display device |
| CN104242046A (en) * | 2014-10-22 | 2014-12-24 | 青岛大学 | Graphene-based mode-locked laser device |
| CN104518419B (en) * | 2015-01-28 | 2018-03-13 | 湖南科瑞特科技股份有限公司 | A kind of laser with active-passive lock mould |
| CN105870769B (en) * | 2016-06-12 | 2018-10-12 | 西北大学 | A kind of actively Q-switched optical fiber laser based on graphene Electro-optical Modulation |
| CN105866984B (en) * | 2016-06-12 | 2019-01-18 | 西北大学 | A kind of graphene electro-optical modulator and preparation method thereof |
| CN106025778B (en) * | 2016-07-08 | 2019-01-08 | 山东省科学院激光研究所 | Saturated absorbing body for optical-fiber laser passive-locked-mode |
| CN108175951A (en) * | 2017-12-26 | 2018-06-19 | 周建辉 | Graphene Q-switch laser beauty instrument |
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Effective date of registration: 20231127 Address after: 250000 f1-7-701, Innovation workshop, No. 2016, Feiyue Avenue, high tech Zone, Jinan, Shandong Province Patentee after: JINAN JINGZHONG OPTOELECTRONICS TECHNOLOGY CO.,LTD. Address before: 250100, No. 27, Da Nan Road, Licheng District, Shandong, Ji'nan Patentee before: SHANDONG University |