CN101908713A - Graphene optical Q-switch and application - Google Patents
Graphene optical Q-switch and application Download PDFInfo
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- CN101908713A CN101908713A CN 201010242865 CN201010242865A CN101908713A CN 101908713 A CN101908713 A CN 101908713A CN 201010242865 CN201010242865 CN 201010242865 CN 201010242865 A CN201010242865 A CN 201010242865A CN 101908713 A CN101908713 A CN 101908713A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 67
- 230000003287 optical effect Effects 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000009286 beneficial effect Effects 0.000 claims abstract description 3
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 14
- 238000005086 pumping Methods 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 7
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000000087 laser glass Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 17
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000007747 plating Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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Abstract
The invention relates to a graphene optical Q-switch and an application. The graphene optical Q-switch comprises a SiC substrate and a grapheme material growing on the SiC substrate. One surface carrying the grapheme faces the inner side of the laser cavity while the other surface faces the outer side of the laser cavity. The graphene optical Q-switch is used in the laser, pump light passes through the graphene optical Q-switch after passing through the laser gain medium and the SiC substrate is used as an output mirror and forms a resonant cavity with the front cavity mirror in front of the laser gain medium. The invention can adjust loss of laser generated by visible light, infrared or ultraviolet light. The Q-switch has the advantages of simple preparation, low cost, achievable adjustment of laser with large wavelength range and is beneficial to industrialized production and the like.
Description
Technical field
The present invention relates to laser device field, particularly the graphene optical Q-switch device.
Background technology
Graphene has the two-dimensional structure that the stratiform atom is arranged, and is a class zero bandgap semiconductor material.When low-power illumination is mapped on the Graphene, can be on valence band and conduction band form electronics and the hole right, electronics and hole redistribute on conduction band and the valence band respectively afterwards, after distributing, electronics and hole can reconfigure, form the distribution when not shining, the linear absorption process of Here it is Graphene.When shining again, light can repeat above process.Yet when high light shone, the electronics in its valence band can all transit to conduction band, form to distribute at conduction band, thereby can not absorb this light again, just this light was kept higher transmittance, the saturable absorption characteristic of Here it is this material.This saturable absorption characteristic makes this material can be used as modulation element laser is modulated, and produces pulse laser.Semiconductor saturable absorber commonly used mainly contains saturable absorbing mirror (SESAM) and two kinds of devices of GaAs (GaAs), these two kinds of devices are except manufacture craft very the complexity, also very responsive to wavelength, its absorption differs greatly for different wavelength, does not even absorb; When using, need design according to different wavelength, this has just brought very big inconvenience to its making and application.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, a kind of graphene optical Q-switch is provided, utilize saturable absorption characteristic that grapheme material has and, make the Q-switch device with grapheme material to the insensitive characteristics of wavelength.
Technical scheme of the present invention is as follows:
A kind of graphene optical Q-switch device, comprise SiC substrate and the grapheme material that is grown in above the SiC substrate, the one side that is loaded with Graphene is in laser cavity, and the another side that is not loaded with Graphene is outside laser cavity, with Graphene as Q switched element, simultaneously with the SiC substrate as outgoing mirror.
Preferably, on the SiC substrate, be not loaded with the one side plating of Graphene to help the deielectric-coating of laser generation.This deielectric-coating can be when using requirement, change the reflectivity of oscillation light, the shortcoming that factor such as reflectivity is immutable when overcoming plated film is not brought helps the design of pulse laser.
The described grapheme material that is grown in above the SiC substrate, its growth number of plies is the 1-40 layer.Its preparation method adopts the epitaxy growth to obtain for being substrate with 6H carborundum, and growing method is by prior art, for example " preparation of the epitaxial growth of carborundum films, structural characterization and Graphene ", China Science ﹠ Technology University, doctorate paper, Liu faithful and upright person, 102 pages.The preferred Graphene number of plies is the 1-30 layer, more preferably the 1-10 layer.
Described graphene optical Q-switch device can be processed into arbitrary shape, preferably rectangle or circle.But whatsoever the graphene optical Q-switch of shape all needs the gain medium of face need in laser cavity with the growth Graphene, and another side is outside the chamber.Make this Q-switch that the loss in the chamber is modulated like this, realize simultaneously laser is exported.
The application of graphene optical Q-switch device of the present invention is used for laser, is loaded with the gain medium of one side in laser cavity of Graphene, and the another side that is not loaded with Graphene is outside laser cavity; Adopt the mode of end face or profile pump, pump light is input in the gain medium, described pump light through behind the gain medium again by the Graphene Q switched element, form resonant cavity with the SiC substrate of Graphene Q switched element one as outgoing mirror and the front cavity mirror that places the gain medium front.Described front cavity mirror is coated with the deielectric-coating that is beneficial to laser generation.
In order to suppress the generation of mode-locked laser, described resonant cavity is short more good more; For the stable Q-switch laser of easier acquisition, the hot spot ratio on described gain medium and the Graphene is the bigger the better, wherein the preferred 10-100 of hot spot ratio on gain medium and the Graphene (can obtain by the cavity modes computing formula).
Described gain medium be semiconductor, laser crystal, laser ceramics or laser glass etc. all can produce the medium of laser gain, be processed into cylindrical or cuboid, its end face plates with the absorption that helps pump light and the deielectric-coating of laser generation, also can be not plated film of finishing polish.Preferably, described gain medium is the Nd:YAG crystal, Nd
3+Ion concentration is 0.01-0.10at..
Described pumping source is the light source that semiconductor laser diode (LD) or xenon lamp etc. can provide pump energy.
The deielectric-coating of the input mirror of described front cavity mirror can directly be plated on gain medium apart from the Graphene face far away, and another face can plate to help the deielectric-coating that laser generation and pump light absorb, also plated film not.
Described front cavity mirror is that a radius is the plano-concave mirror of 10-1000mm, and the concave surface plating is with the deielectric-coating to the high reflection of 1.05-1.1 μ m, and the distance between front cavity mirror and the Q switched element is 0.05-10cm, is preferably 0.05-1cm.
A kind of pulse laser comprises the Graphene Q-switch that the present invention is above-mentioned.
Graphene Q-switch provided by the invention, have make simple, cost is low, can realize wavelength in a big way inner laser adjusting, help characteristics such as industrialization production.
Graphene Q-switch provided by the invention can be used for generation visible light, laser infrared or ultraviolet are carried out the adjusting of loss, has comprised the laser that semiconductor, laser crystal, laser ceramics and laser glass produce.Can realize modulation to LD or xenon flash lamp pumping laser.
The SiC crystal has big thermal conductivity (490W/mK) and refractive index (being about 2.6), its reflectivity is about 40% during normal incidence, can be used as the output cavity mirror of laser, the output of realization laser, and have the saturable absorption characteristic at its epontic Graphene, the combination of two aspects makes it when using, and has realized the integrated of outgoing mirror and saturable absorber.During the Q-switch device application of making based on the grapheme material of growing on the SiC substrate, have following advantage:
1. insensitive to wavelength.Graphene has planar structure, is zero bandgap semiconductor, and these characteristics have determined such material to have the insensitive characteristic of wavelength, can realize being a class " general " switch to the modulation of ultraviolet to infrared band laser.
2. the characteristics that have miniaturization, compoundization of function.Based on the grapheme material of SiC substrate, its surperficial Graphene has the saturable absorption characteristic, and its SiC substrate has the output cavity mirror realization pulse laser output that big refractive index can be used as laser.Therefore, this device has been realized the integrated of saturable absorber and outgoing mirror, has the characteristics of miniaturization and compoundization of function.
3. help industrialization, produce in batches.Grapheme material is prepared as substrate with SiC, and the size of its size is decided by the size of its substrate.At present, the industrialization of large-sized SiC material, its size can reach more than 3 inches, and this has determined this Q switching can carry out large-area making, can directly cut application according to different demands.
Description of drawings
Fig. 1 is the pictorial diagram of the Graphene of growing on the silicon carbide substrates involved in the present invention.
Fig. 2 is the structural representation of Graphene Q-switch of the present invention, wherein, and 1. Graphene, 2.SiC substrate.
Fig. 3 is the LD end pumping, with the Laser Devices structural representation of the present invention as Q switched element, wherein, 3. pumping source, 4. fiber coupling system, 5. focusing system, 6. front cavity mirror, 7. gain medium, 8 Graphene Q-switchs.
Fig. 4 is the xenon lamp profile pump, with the Laser Devices structural representation of the present invention as Q switched element, wherein, 9. front cavity mirror, 10. xenon lamp, 11. gain mediums, 12. Graphene Q-switchs.
Embodiment
Below in conjunction with embodiment the present invention is described further, but is not limited thereto.
The Graphene of growing on silicon carbide substrates photo in kind as shown in Figure 1, its preparation method adopts the epitaxy growth to obtain for being substrate with 6H carborundum, its growing method such as China Science ﹠ Technology University, the doctorate paper, Liu faithful and upright person, 102 pages put down in writing.Selecting the Graphene number of plies for use is the 10-30 layer, can Q-switch be cut to rectangle or circle according to the needs of using.The structural representation of the Graphene Q-switch of rectangle as shown in Figure 2.
Utilize emission wavelength for 808nm laser as pumping source, with the Nd:YAG crystal as gain medium, adopt cavity configuration as shown in Figure 3 to make pulse laser.This laser comprises: laser diode as pumping source (3), Nd:YAG crystal (6) as gain medium, coupled system (4,5), front cavity mirror (6) and Q switched element of the present invention (8) five parts.The Nd of this Nd:YAG crystal wherein
3+Ion concentration is 0.01-0.10at..The pump light incident end face of Nd:YAG crystal is coated with 808nm and deielectric-coating that 1.05-1.1 mu m waveband height is seen through, plating is to the high saturating deielectric-coating of 1.05-1.1 mu m waveband on output end face, front cavity mirror (6) is that a radius is the plano-concave mirror of 100-500mm, the plane plating is plated with the deielectric-coating to the high reflection of 1.05-1.1 μ m with, concave surface saturating to 808 height, Q switched element (8) is long to have the face of Graphene in resonant cavity, the number of plies of Graphene is the 10-20 layer, and another side is plated film not.Distance between front cavity mirror (6) and the Q switched element (8) is 1cm.Strengthen pump power, can directly export pulse laser output.Below the pulse duration≤100ns of pulse laser, average output power 〉=500mW, repetition rate 〉=100kHz.
Embodiment 3:
As described in embodiment 2, different is does not grow the face plating of Graphene to help the deielectric-coating of laser generation on the SiC of Q-switch of the present invention substrate.
Embodiment 4:
Utilize xenon lamp as pumping source, with the Nd:YAG crystal as gain medium, adopt cavity configuration as shown in Figure 4 to make pulse laser.This laser comprises: xenon lamp is as pumping source (10), Nd:YAG crystal (11), front cavity mirror (9) and Q switched element of the present invention (12) four parts.The Nd of this Nd:YAG crystal wherein
3+Ion concentration is 0.01-0.10at..The Nd:YAG crystal is processed into cylindrical or rectangular build, two end face is coated with the deielectric-coating that 1.05-1.1 mu m waveband height is seen through, wherein front cavity mirror (9) is that a radius is the plano-concave mirror of 500-1000mm, concave surface is coated with the deielectric-coating to the high reflection of 1.05-1.1 μ m, Q-switch of the present invention (12) is long to have the face of Graphene in resonant cavity, the number of plies of Graphene is the 10-15 layer, and SiC substrate length has not plated film of Graphene another side.Distance between front cavity mirror (9) and the Q-switch (12) is 10cm.Strengthen pump power, can directly export pulse laser output.
Embodiment 5: as described in embodiment 4, the face plating of the Graphene of not growing of different is Q-switch of the present invention is to help the deielectric-coating of laser generation.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of claim of the present invention.
Claims (10)
1. graphene optical Q-switch device, comprise SiC substrate and the grapheme material that is grown in above the SiC substrate, the one side that is loaded with Graphene is in laser cavity, and the another side that is not loaded with Graphene is outside laser cavity, with Graphene as Q switched element, simultaneously with the SiC substrate as outgoing mirror.
2. graphene optical Q-switch device according to claim 1 is characterized in that the grapheme material growth number of plies above the described SiC of the being grown in substrate is the 1-40 layer.
3. graphene optical Q-switch device according to claim 1 is characterized in that the grapheme material growth number of plies above the described SiC of the being grown in substrate is the 1-30 layer; Most preferably be the 1-10 layer.
4. graphene optical Q-switch device according to claim 1 is characterized in that being processed into rectangle or circle.
5. the application of each described graphene optical Q-switch device of claim 1-3 is used for laser, is loaded with the gain medium of one side in laser cavity of Graphene, and the another side that is not loaded with Graphene is outside laser cavity; Adopt the mode of end face or profile pump, pump light is input in the gain medium, described pump light through behind the gain medium again by the Graphene Q switched element, form resonant cavity with the SiC substrate of Graphene Q switched element one as outgoing mirror and the front cavity mirror that places the gain medium front; Described front cavity mirror is coated with the deielectric-coating that is beneficial to laser generation.
6. the application of graphene optical Q-switch device as claimed in claim 4 is characterized in that described gain medium is semiconductor, laser crystal, laser ceramics or laser glass.
7. the application of graphene optical Q-switch device as claimed in claim 4 is characterized in that, described gain medium is the Nd:YAG crystal, Nd
3+Ion concentration is 0.01-0.10at..
8. the application of graphene optical Q-switch device as claimed in claim 4 is characterized in that described pumping source is the light source that semiconductor laser diode (LD) or xenon lamp etc. can provide pump energy.
9. the application of graphene optical Q-switch device as claimed in claim 4 is characterized in that the distance between described front cavity mirror and the Q switched element is 0.05-10cm; Be preferably 0.05-1cm.
10. a pulse laser comprises each described graphene optical Q-switch device of claim 1-3.
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| CN102368584A (en) * | 2011-09-16 | 2012-03-07 | 北京工业大学 | Passive mode-locking ultrashort pulse all-fiber laser with waveband of 2.0 microns |
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2010
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| CN102208743B (en) * | 2011-04-21 | 2013-03-06 | 北京工业大学 | Passive mode-locking laser based on graphite alkene having epitaxial growth on SiC substrate |
| CN102227044B (en) * | 2011-05-17 | 2013-01-23 | 北京工业大学 | Grapheme passively Q-switched nanosecond pulse fiber laser |
| CN102227044A (en) * | 2011-05-17 | 2011-10-26 | 北京工业大学 | Grapheme passively Q-switched nanosecond pulse fiber laser |
| CN102306894A (en) * | 2011-08-18 | 2012-01-04 | 厦门大学 | Graphene-based multi-wavelength Q-modulation rare-earth-doped fiber laser |
| CN102368585A (en) * | 2011-09-16 | 2012-03-07 | 北京工业大学 | High-repetition-frequency passive-mode-locking ultrashort-pulse all-fiber laser |
| CN102368584A (en) * | 2011-09-16 | 2012-03-07 | 北京工业大学 | Passive mode-locking ultrashort pulse all-fiber laser with waveband of 2.0 microns |
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| CN105900005B (en) * | 2014-01-14 | 2019-02-22 | 伊英克加利福尼亚有限责任公司 | Full-color EL display device |
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| CN105866984A (en) * | 2016-06-12 | 2016-08-17 | 西北大学 | Graphene electro-optical modulator and preparation method thereof |
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| CN108175951A (en) * | 2017-12-26 | 2018-06-19 | 周建辉 | Graphene Q-switch laser beauty instrument |
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