CN103368057A - Two-dimensional MoS2 laser pulse modulation device and pulse modulated laser for all-solid state laser - Google Patents
Two-dimensional MoS2 laser pulse modulation device and pulse modulated laser for all-solid state laser Download PDFInfo
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- CN103368057A CN103368057A CN2013102782013A CN201310278201A CN103368057A CN 103368057 A CN103368057 A CN 103368057A CN 2013102782013 A CN2013102782013 A CN 2013102782013A CN 201310278201 A CN201310278201 A CN 201310278201A CN 103368057 A CN103368057 A CN 103368057A
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Abstract
The invention relates to a two-dimensional MoS2 laser pulse modulation device and a pulse modulated laser for all-solid state laser. The MoS2 pulse modulation device comprises a substrate and a MoS2 material deposited on the substrate, wherein the substrate is 0.5 to 2mm thick; and the MoS2 material is 1 to 50nm thick. The MoS2 pulse modulation device can be used for performing Q switching or mode locking on laser generating visible light, infrared light or ultraviolet light. The pulse modulated laser for the all-solid state laser comprises a pumping source, a front cavity mirror, a laser gain medium, a MoS2 modulation device and an output mirror, wherein the MoS2 modulation device is arranged in a resonant cavity to manufacture a laser with a Q switching device or a mode locking device; and the laser gain medium is a semiconductor, a laser crystal, laser ceramics or laser glass. The pulse modulation device has the characteristics of being simple in manufacturing, capable of adjusting laser within a larger wavelength range, favorable for industrial production, and the like.
Description
Technical field
The present invention relates to laser device field, particularly stratiform MoS
2Laser pulse modulator device and the application in the complete solid state pulse laser thereof.
Background technology
Pulse laser has the advantages such as peak power height, energy is large, the burst length is short, is important component part and the developing direction of laser.(be: transmitance is high when the high-energy-density Ear Mucosa Treated by He Ne Laser Irradiation for saturable absorption characteristic by material itself, and the low characteristic of transmitance during low-energy laser irradiation) loss of laser production process is regulated, thereby the mode that obtains pulse laser becomes the passive modulation technology.Passive modulation is because the advantages such as simple to operate, compact conformation are being played the part of more and more important role in pulse laser.Saturable absorption material commonly used mainly contains chromium doped yttrium aluminum garnet (Cr at present
4+: Y
3Al
5O
12) and semiconductor saturable absorber (as: SESAM and GaAs).These two kinds of passive modulation devices are except manufacture craft is very complicated, and also responsive especially to wavelength modulation range, its absorption differs greatly for different wavelength, does not even absorb; So when using, need to design according to different wavelength, this has brought many inconvenience with regard to the real world applications of giving it.
Body piece MoS
2Natural minerals, its structure are six side's layer structures, and interlayer is with weak Van der Waals for combination, thereby shear strength is very low, so the kollag in being often used as the industry such as ultra high vacuum and Aero-Space.This material or a based semiconductor material, the MoS of different-thickness
2Has different band structures.
Summary of the invention
For the deficiencies in the prior art, utilize the natural mineral MoS that exists
2Characteristic of semiconductor, the invention provides a kind of bidimensional stratiform MoS
2Pulse modulation device and the application in all-solid state laser thereof.
It is a kind of based on MoS that the present invention also provides
2The all-solid state laser pulse modulated lasers.
The term explanation:
Above the substrate, refer to for deposition MoS
2The upper surface of material.
Substrate back: the one side that refers to not be loaded with on the substrate MoS2 material.
Technical scheme of the present invention is as follows:
One, bidimensional MoS
2The Laser pulse modulator device
A kind of MoS
2The pulse modulation device comprises substrate and the MoS that is deposited on above the substrate
2Material, described substrate are selected from crystal or the ceramic material that used laser is seen through, wherein preferred quartz substrate or Sapphire Substrate; Described substrate thickness is 0.5～2mm;
The described MoS that is deposited on above the substrate
2Material thickness is the 1-50 nanometer, wherein preferred 5-20 nanometer.
Preferred according to the present invention, described substrate is quartz substrate, and thickness is 1mm.
Preferred according to the present invention, the described MoS that is deposited on above the substrate
2Material thickness is the 8-15 nanometer.
Further preferred, the MoS that the present invention is above-mentioned
2The pulse modulation device is coated with the deielectric-coating that is beneficial to laser generation at substrate back.Variable controlled to realize reflectivity.The described deielectric-coating that is beneficial to laser generation is adjusted the thickness of deielectric-coating under the condition to the light transmission rate of specific wavelength 〉=98%.
The shortcoming that the factors such as the requirement when the described deielectric-coating that is beneficial to laser generation can be used according to the pulse modulation device changes the reflectivity of oscillation light, and reflectivity is immutable when overcoming plated film are not brought is conducive to the design of pulse laser.
MoS of the present invention
2The pulse modulation device can be processed into arbitrary shape, and is preferred, described MoS
2The pulse modulation device is rectangle or circle.
MoS of the present invention
2The application of pulse modulation device is used for carrying out pulse modulation to producing visible light or infrared laser, comprises and transfers Q or locked mode.
MoS of the present invention
2The preparation of pulse modulation device gets final product by prior art, comprises the steps:
(1) adopt pulsed laser deposition to deposit MoS at substrate by prior art
2Material;
Randomly further comprising the steps of:
(2) plate to be conducive to the deielectric-coating of laser generation at substrate back.
Pulsed laser deposition deposits MoS at substrate
2Material can be by prior art, such as the article " Characterization of pulsed laser deposited MoS2by transmission electron microscopy " of reference S.D.Walck, J.Mater.Res, 1993,8 (11): 2933.
Two, stratiform MoS
2The pulse modulation device be applied to the all-solid state laser pulse modulated lasers
A kind of based on MoS
2The all-solid state laser pulse modulated lasers, comprise pumping source, front cavity mirror, gain medium, MoS
2Modulation device, outgoing mirror; Described front cavity mirror and outgoing mirror form resonant cavity, and the front cavity mirror plating is with to the high reflecting medium film of laser wavelength, and the outgoing mirror plating is with to laser wavelength part reflecting medium film.With described MoS
2Modulation device places in the described resonant cavity, makes the laser of Q-switching device or locked mode device.
According to above-mentioned all-solid state laser pulse modulated lasers, described gain medium be semiconductor, laser crystal, laser ceramics or laser glass etc. all can produce the medium of laser gain, be processed into cylinder or cuboid, choose wantonly, its end face plates to be conducive to the deielectric-coating of pumping Optical Absorption and laser generation, also can be not plated film of finishing polish.
Preferably, described gain medium is neodymium or praseodymium doped yttrium aluminum garnet (Nd:YAG, or Pr:YAG) crystal or pottery, and the neodymium doped yttrium vanadate (is called for short: Nd:YVO
4) crystal, perhaps the titanium jewel (is called for short: Ti:Al
2O
3) crystal.Wherein the doping content of alloy gets final product by this area routine techniques.
According to above-mentioned all-solid state laser pulse modulated lasers, described pumping source is semiconductor laser diode (LD) or xenon lamp, and the light source of pump energy can be provided.
According to above-mentioned all-solid state laser pulse modulated lasers, the front cavity mirror of composition resonant cavity, the curvature of outgoing mirror can require design according to resonant cavity, and Resonator design is well known technology.
The below describes in detail respectively with regard to the laser of Q-switching device or locked mode device.Wherein, described " anti-reflection " about deielectric-coating, " high reflection ", " part reflection " have implication well known in the art, " anti-reflection " refers generally to the light transmission rate 〉=99% to specific wavelength, " high reflection " refers generally to the reflectivity 〉=99% to specific wavelength, and " part reflection " refers generally to reflectivity to specific wavelength between 50%-99%.
1, according to above-mentioned all-solid state laser pulse modulated lasers, preferred, based on MoS
2The all-solid state laser pulse modulated lasers be end pumping MoS
2The Q-switching device laser:
A kind of end pumping MoS
2The Q-switching device laser comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, MoS
2Modulation device, the plano-concave outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror consist of adopts straight chamber, and cavity length is 1-10cm.Pump light is input in the gain medium through fiber coupling system, focusing system and front cavity mirror, produces laser through MoS
2Pass through again plano-concave outgoing mirror, output Q-switched pulse after the modulation device modulation.
In order to suppress the generation of mode-locked laser, described resonant cavity is more short better, preferred cavity length 1～3cm; Take cavity length 1cm as best.
Further preferred, described pumping source is the LD laser of emission wavelength 808nm.Described front cavity mirror is level crossing, and with to the anti-reflection deielectric-coating of 808nm, relative another side plating is with the deielectric-coating to the high reflection of 1.05-1.1 μ m near the logical optical surface plating of pumping source.
Described gain medium is the Nd:YAG crystal.Described plano-concave outgoing mirror radius is 10-1000mm, the plating of its concave surface take 1.05-1.1 μ m is partly reflected, reflectivity is as the deielectric-coating between the 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
When exporting as the 946nm wavelength with the Nd:YAG crystal, selecting equally pumping source is the LD laser of emission wavelength 808nm, keeps the Plant arrangement of Q device laser.With to the anti-reflection deielectric-coating of 808nm, relative another side plating is with the deielectric-coating to the high reflection of 900-1000nm near the logical optical surface plating of pumping source for the ante-chamber level crossing.The plating of the concave surface of its plano-concave outgoing mirror take 900-1000nm is partly reflected, reflectivity is as the deielectric-coating between the 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 900-1000nm.
When gain media is Nd:YVO
4When exporting as 1.06 μ m (or 1.34 μ m) wavelength, selecting equally pumping source is the LD laser of emission wavelength 808nm, and the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.With to the anti-reflection deielectric-coating of 808nm, relative another side plating is with the deielectric-coating to the high reflection of 1.05-1.1 μ m (or 1.3-1.4 μ m) near the logical optical surface plating of pumping source for the ante-chamber level crossing.The plating of the concave surface of its plano-concave outgoing mirror take to the reflection of 1.05-1.1 μ m (or 1.3-1.4 μ m) part, reflectivity as the deielectric-coating between the 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m (or 1.3-1.4 μ m).
When gain media is Ti:Al
2O
3During as the wide wavelength output of 700-900nm, pumping source is green glow or the blue laser that is emitted as about 500nm, and the deielectric-coating of corresponding front cavity mirror and outgoing mirror two ends plated surface also will change accordingly.With to the anti-reflection deielectric-coating of 500nm, relative another side plating is with the deielectric-coating to the high reflection of 600-1000nm near the logical optical surface plating of pumping source for the ante-chamber level crossing.The plating of the concave surface of its plano-concave outgoing mirror take 600-1000nm is partly reflected, reflectivity is as the deielectric-coating between the 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 600-1000nm.
2, according to above-mentioned all-solid state laser pulse modulated lasers, preferred, based on MoS
2The all-solid state laser pulse modulated lasers be end pumping MoS
2Locked mode device laser:
A kind of end pumping MoS
2Locked mode device laser comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, plano-concave speculum, MoS
2Modulation device, average outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror consist of adopts v-shaped cavity, and pump light is input in the gain medium through fiber coupling system, focusing system and front cavity mirror, passes through MoS after the plano-concave mirror reflects
2Modulation device is at last by average outgoing mirror output mode locking pulse.
Further preferred, described pumping source is the LD laser of emission wavelength 808nm.Front cavity mirror is level crossing, and with to the anti-reflection deielectric-coating of 808nm, other end plated surface is with the deielectric-coating to the high reflection of 1.05-1.1 μ m near pumping source one end surfaces plating.
Described gain medium is the Nd:YAG crystal as 1.06 μ m output, and the pump light incident end face is coated with 808nm, deielectric-coating that 1.05-1.1 μ m is anti-reflection, in the output end face plating with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.The concave surface plating of described plano-concave speculum is with the deielectric-coating to the high reflection of 1.05-1.1 μ m.Described outgoing mirror is near the resonant cavity one end plating deielectric-coating so that 1.05-1.1 μ m is partly reflected, and other end plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
When exporting as the 946nm wavelength with the Nd:YAG crystal, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.
When gain media is Nd:YVO
4During as 1.06 μ m or the output of 1.34 mum wavelengths, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.Selecting equally pumping source is the LD laser of emission wavelength 808nm.
When gain media is Ti:Al
2O
3During as the wide wavelength output of 700-900nm, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly, and pumping source is the green (light) laser that is emitted as about 500nm.
When exporting as the 500-700nm wavelength with the Pr:YAG crystal, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly, and pumping source is the blue laser that is emitted as about 450nm.
3, according to above-mentioned all-solid state laser pulse modulated lasers, based on MoS
2The all-solid state laser pulse modulated lasers be profile pump stratiform MoS
2The Q-switching device laser:
A kind of profile pump MoS
2The Q-switching device laser comprises front cavity mirror, pumping source, gain medium, MoS
2Modulation device, average outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror consist of adopts straight chamber.Pump light produces laser through MoS from the input of gain medium side
2Pass through again average outgoing mirror, output Q-switched pulse after the modulation device modulation.
Further preferred, described pumping source is xenon lamp.Described front cavity mirror is level crossing, near the deielectric-coating of resonant cavity one end surfaces plating so that 1.05-1.1 μ m height is reflected.
Described gain medium is the Nd:YAG crystal.
Described plano-concave outgoing mirror radius is 10-1000mm, the plating of its concave surface take 1.05-1.1 μ m is partly reflected, reflectivity is as the deielectric-coating of 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
MoS provided by the invention
2The pulse modulation device can be used for generation visible light, all-solid state laser infrared or ultraviolet are transferred Q and locked mode, has comprised the laser that semiconductor, laser crystal, laser ceramics and laser glass produce, and can realize the modulation of pulse laser.Strengthen pump power and can obtain pulse laser output.
MoS provided by the invention
2During pulse modulation, have following advantage:
1. the present invention utilizes MoS
2The characteristic of semiconductor of material, such material are under the high light effect, and it can be saturated for Optical Absorption, produce the saturable absorption characteristic, can be used for saturable absorber and carry out pulse modulation, produce pulse laser.MoS
2Material has the insensitive characteristic of wavelength, can realize playing the effect of universal switch to seeing the modulation of infrared band laser.
2. the present invention is conducive to industrialization, produces in batches.MoS
2Material is the ubiquitous mineral of nature, stratiform MoS
2Have preparation method's (vapour deposition, magnetron sputtering and pulsed laser deposition) of comparative maturity, substrate can be selected the various materials such as quartz, sapphire, and the size of its size is decided by the size of its substrate.Just because of its material preparation with to the insensitive characteristic of substrate, but such modulation device has the potentiality of industrialization and batch production.
Description of drawings
Fig. 1 is MoS of the present invention
2The structural representation of pulse modulation device, wherein, 1.MoS
2, 2. substrate.
Fig. 2 is the MoS of embodiment 1
2The photo in kind of pulse modulation device.
Fig. 3 is the LD end pumping, based on MoS
2All-solid state laser pulse modulated lasers structural representation, MoS
2Modulation device is as the Laser Devices of Q-switching device, wherein, and 3. pumping source, 4. fiber coupling system, 5. focusing system, 6. front cavity mirror, 7. gain medium, 8.MoS
2Modulation device, 9. plano-concave outgoing mirror.
Fig. 4 is the LD end pumping, based on MoS
2All-solid state laser pulse modulated lasers structural representation, MoS
2Modulation device is as the Laser Devices structural representation of locked mode device, wherein, and 10. plano-concave speculum, 11. average outgoing mirrors.
Fig. 5 is the xenon lamp profile pump, based on MoS
2All-solid state laser pulse modulated lasers structural representation, MoS
2Modulation device is as the Laser Devices structural representation of Q-switching device, wherein 12. xenon lamps.
Fig. 6 is the end pumping MoS of embodiment 3
2The adjustable Q laser pulse figure of Q-switching device laser.
Embodiment
Describe embodiments of the present invention in detail below in conjunction with accompanying drawing, wherein in the description of the drawings, give identical symbol for identical key element, omit the description that repeats.
Embodiment 1:
MoS
2The pulse modulation device is by substrate and the MoS that is deposited on above the substrate
2Layer forms, structure as shown in Figure 1, substrate is selected the thick quartz substrate of 1mm; Described MoS
2The thickness of layer is 20nm; Be processed as circular piece, photo in kind as shown in Figure 2.
Deposit MoS in quartz substrate
2Method be take quartz as substrate, adopt pulsed laser deposition to obtain, referring to article " the Characterization of pulsed laser deposited MoS of S.D.Walck
2By transmission electron microscopy ", J.Mater.Res, 1993,8 (11): 2933.Light source adopts Lambda Physik110i excimer laser.Centre wavelength is 248nm, and pulse energy is 100mJ/pulse, and repetition rate is 10Hz.Control the MoS of deposition by the control impuls number of times
2Thickness, deposition velocity is approximately 19nm/min.In this external deposition process, target and substrate need to remain on about 10
-4The vacuum degree of Pa, and substrate need to remain on 300 ℃ of crystallinity that are beneficial to.
Embodiment 2:
As described in Example 1, difference is: wherein, and MoS
2The plating of the quartz substrate back side of modulation device is with to the anti-reflection deielectric-coating of 1064nm.
The MoS of above-described embodiment 1-2
2The pulse modulation device is applied in following examples as Q-switching device (embodiment 3, embodiment 4, embodiment 7) or the locked mode device (embodiment 5-6) of all-solid state laser with pulse modulated lasers.
Embodiment 3: a kind of end pumping MoS
2The Q-switching device laser
Structure as shown in Figure 3, this device comprises pumping source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, gain medium 7, MoS
2Modulation device 8 and outgoing mirror 9 seven parts.Wherein, MoS
2Modulation device 8 as described in Example 1.
Pumping source 3 is the LD laser of emission wavelength 808nm.Front cavity mirror 6 is a level crossing, and with to the anti-reflection deielectric-coating of 808nm, other end plated surface is with the deielectric-coating to the high reflection of 1.05-1.1 μ m near pumping source one end surfaces plating.Gain medium 7 is Nd:YAG crystal, Nd
3+Ion concentration is 0.5at.%, and incident end face is coated with the anti-reflection deielectric-coating to 808nm, 1064nm, and plating is with to the anti-reflection deielectric-coating of 1064nm on the outgoing end face.Outgoing mirror 9 is the plano-concave mirror of 100mm for Radius, the concave surface plating deielectric-coating so that 1.05-1.1 μ m is partly reflected, and its reflectivity is 80%-99%, the plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
This laser can utilize MoS
2Material realizes that wavelength is the Q-switch laser output of 1.06 μ m.After strengthening pump power, surpassing its pumping threshold, can direct output Q-switched pulse laser.Its adjustable Q laser pulse figure as shown in Figure 6.Pulse duration is 737.6ns.
Embodiment 4: as described in Example 3, difference is: wherein, and MoS
2Modulation device 8 as described in Example 2.
Embodiment 5: a kind of end pumping MoS
2Locked mode device laser
Structure as shown in Figure 4, this device comprises pumping source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, gain medium 7, plano-concave speculum 10, MoS
2Modulation device 8 and outgoing mirror 11 8 parts.Pumping source 3 is the LD laser of emission wavelength 450nm.Front cavity mirror 6 is a level crossing, and with to the anti-reflection deielectric-coating of 450nm, other end plated surface is with the deielectric-coating to the high reflection of 500-700nm near pumping source one end surfaces plating.Gain medium 7 is praseodymium doping YAG crystal (Pr:YAG), its Pr
3+Ion concentration is about 5at.%, and incident end face is coated with the anti-reflection deielectric-coating to 450nm, 500-700nm, and the outgoing end face is coated with the anti-reflection deielectric-coating to 500-700nm.Plano-concave speculum 10 is the plano-concave mirror, and the concave surface plating is with the deielectric-coating to the high reflection of 500-700nm.MoS
2(MoS does not grow at the quartz substrate back side of modulation device 8
2Face) do not plate any anti-reflection film.The 500-700nm reflectivity being about 97% part reflecting medium film, other end plating is with to the anti-reflection deielectric-coating of 500-700nm near the plating of resonant cavity one ends for outgoing mirror 11.
This routine locked mode device laser utilizes MoS
2Material is realized mode-locked laser output, strengthens and can directly export Mode-locked laser after pump power surpasses its pumping threshold.
Embodiment 6: as described in Example 5, difference is MoS
2Also plate with to the anti-reflection deielectric-coating of 500-700nm at the quartz substrate back side of modulation device 8.
Embodiment 7:
As described in Example 4, difference is that pumping source (3) is the LD laser of emission wavelength 500nm.Front cavity mirror 6 is a level crossing, near pumping source one end surfaces plating with to the anti-reflection deielectric-coating of 500nm, near the plating of resonant cavity one end surfaces with to the high reflecting medium film of 700-900nm.Gain medium 7 is Ti:Al
2O
3Crystal, its Ti
3+Ion concentration is about 0.1at.%, and incident end face is coated with the high anti-reflection deielectric-coating to 500nm-900nm, and the outgoing end face is coated with the anti-reflection deielectric-coating to 700-900nm.Plano-concave speculum 10 is the plano-concave mirror, and concave surface plating is with to the high reflecting medium film of 700nm-900nm.MoS
2The quartz substrate of modulation device 8 MoS that do not grow
2Face plated film not, but put into Brewster's angle.So that the 700-900nm reflectivity is about 97% deielectric-coating, other end plating is with to the anti-reflection deielectric-coating of 700-900nm near the plating of resonant cavity one ends for outgoing mirror 11.Utilize MoS
2Material is realized mode-locked laser output, strengthens pump power, can directly export Mode-locked laser.
Embodiment 8: a kind of profile pump MoS
2The Q-switching device laser
Structure as shown in Figure 5, this device comprises front cavity mirror 6, pumping source 12, gain medium 7, MoS
2Modulation device 8 and outgoing mirror 11.Front cavity mirror 6 is a level crossing, near the deielectric-coating of resonant cavity one end surfaces plating so that 1.05-1.1 μ m height is reflected.Pumping source 12 is xenon lamp, adopts the mode of profile pump.Gain media 7 is Nd:YVO
4Crystal.Take to the deielectric-coating of 1.05-1.1 μ m reflectivity as 99%, other end plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m near the plating of resonant cavity one end surfaces for outgoing mirror 11.MoS
2The quartz substrate of modulation device 8 MoS that do not grow
2Face plated film not.Utilize MoS
2Material is realized Q-switch laser output, strengthens pump power, can direct output Q-switched pulse laser.
The present invention also can have other various embodiments, and in the situation that does not deviate from spirit of the present invention and essence thereof, those of ordinary skill in the art can make according to the present invention various corresponding changes and modification.
Claims (10)
1. MoS
2The pulse modulation device comprises substrate and the MoS that is deposited on above the substrate
2Material, described substrate is selected from quartz substrate or Sapphire Substrate; Described substrate thickness is 0.5～2mm; The described MoS that is deposited on above the substrate
2Material thickness is 1-50nm.
2. MoS as claimed in claim 1
2The pulse modulation device is characterized in that described substrate is quartz substrate, and thickness is 1mm; Be deposited on the MoS above the substrate
2Material thickness is 8-15nm.
3. MoS as claimed in claim 1
2The pulse modulation device is characterized in that also being coated with the deielectric-coating that is beneficial to laser generation at substrate back.
4. one kind based on MoS
2The all-solid state laser pulse modulated lasers, comprise pumping source, front cavity mirror, gain medium, MoS
2Modulation device, outgoing mirror; Described front cavity mirror and outgoing mirror form resonant cavity, and the front cavity mirror plating is with to the high reflecting medium film of laser wavelength, and the outgoing mirror plating is with to laser wavelength part reflecting medium film; With described MoS
2Modulation device places in the described resonant cavity, makes the laser of Q-switching device or locked mode device; Described gain medium is semiconductor, laser crystal, laser ceramics or laser glass.
5. as claimed in claim 4 based on MoS
2The all-solid state laser pulse modulated lasers, it is characterized in that described gain medium is Nd:YAG or Pr:YAG crystal or pottery, Nd:YVO
4Crystal, perhaps titanium jewel (Ti:Al
2O
3) crystal; Described pumping source is semiconductor laser diode (LD) or xenon lamp.
6. as claimed in claim 4 based on MoS
2The all-solid state laser pulse modulated lasers, it is characterized in that this pulse modulated lasers is end pumping MoS
2The Q-switching device laser comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, MoS
2Modulation device, the plano-concave outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror consist of adopts straight chamber, and cavity length is 1-10cm.Pump light is input in the gain medium through fiber coupling system, focusing system and front cavity mirror, produces laser through MoS
2Pass through again plano-concave outgoing mirror, output Q-switched pulse after the modulation device modulation; Preferred cavity length 1～3cm.
7. as claimed in claim 6 based on MoS
2The all-solid state laser pulse modulated lasers, it is characterized in that described pumping source is the LD laser of emission wavelength 808nm; Described front cavity mirror is level crossing, and with to the anti-reflection deielectric-coating of 808nm, relative another side plating is with the deielectric-coating to the high reflection of 1.05-1.1 μ m near the logical optical surface plating of pumping source;
Described gain medium is the Nd:YAG crystal; Described plano-concave outgoing mirror radius is 10-1000mm, the plating of its concave surface take 1.05-1.1 μ m is partly reflected, reflectivity is as the deielectric-coating between the 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
8. as claimed in claim 4 based on MoS
2The all-solid state laser pulse modulated lasers, it is characterized in that this pulse modulated lasers is end pumping MoS
2Locked mode device laser comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, plano-concave speculum, MoS
2Modulation device, average outgoing mirror; The resonant cavity that front cavity mirror and outgoing mirror consist of adopts v-shaped cavity, and pump light is input in the gain medium through fiber coupling system, focusing system and front cavity mirror, passes through MoS after the plano-concave mirror reflects
2Modulation device is at last by average outgoing mirror output mode locking pulse.
9. as claimed in claim 8 based on MoS
2The all-solid state laser pulse modulated lasers, it is characterized in that described pumping source is the LD laser of emission wavelength 808nm; Front cavity mirror is level crossing, and with to the anti-reflection deielectric-coating of 808nm, other end plated surface is with the deielectric-coating to the high reflection of 1.05-1.1 μ m near pumping source one end surfaces plating;
Described gain medium is Nd:YAG pottery, and the pump light incident end face is coated with 808nm, deielectric-coating that 1.05-1.1 μ m is anti-reflection, in the output end face plating with to the anti-reflection deielectric-coating of 1.05-1.1 μ m;
The concave surface plating of described plano-concave speculum is with the deielectric-coating to the high reflection of 1.05-1.1 μ m.
Described outgoing mirror is near the resonant cavity one end plating deielectric-coating so that 1.05-1.1 μ m is partly reflected, and other end plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
10. as claimed in claim 4 based on MoS
2The all-solid state laser pulse modulated lasers, it is characterized in that this pulse modulated lasers is profile pump MoS
2The Q-switching device laser comprises front cavity mirror, pumping source, gain medium, MoS
2Modulation device, average outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror consist of adopts straight chamber.Pump light produces laser through MoS from the input of gain medium side
2Pass through again average outgoing mirror, output Q-switched pulse after the modulation device modulation; It is further preferred,
Described pumping source is xenon lamp; Described front cavity mirror is level crossing, near the deielectric-coating of resonant cavity one end surfaces plating so that 1.05-1.1 μ m height is reflected; Described gain medium is the Nd:YAG crystal;
Described plano-concave outgoing mirror radius is 10-1000mm, the plating of its concave surface take 1.05-1.1 μ m is partly reflected, reflectivity is as the deielectric-coating of 80%-99%, its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103996969A (en) * | 2014-05-29 | 2014-08-20 | 山东大学 | Layered VO2 laser pulse modulation device and application thereof |
| CN106129796A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | The MoS prepared based on magnetron sputtering method2saturable absorption body thin film and corresponding ultrashort pulse fiber laser |
| CN106206254A (en) * | 2016-07-13 | 2016-12-07 | 合肥工业大学 | There is the preparation method of the large-area two-dimensional stratified material of excellent photoluminescence property |
| CN108199254A (en) * | 2018-02-11 | 2018-06-22 | 山东大学 | A kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application |
| WO2019134111A1 (en) * | 2018-01-05 | 2019-07-11 | 深圳大学 | Mid-infrared optical fiber laser |
| CN113437630A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Based on 1T-TaS2And its application in laser |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103996969A (en) * | 2014-05-29 | 2014-08-20 | 山东大学 | Layered VO2 laser pulse modulation device and application thereof |
| CN103996969B (en) * | 2014-05-29 | 2017-08-08 | 山东大学 | Stratiform VO2Laser pulse modulator device and application |
| CN106206254A (en) * | 2016-07-13 | 2016-12-07 | 合肥工业大学 | There is the preparation method of the large-area two-dimensional stratified material of excellent photoluminescence property |
| CN106129796A (en) * | 2016-08-09 | 2016-11-16 | 广东工业大学 | The MoS prepared based on magnetron sputtering method2saturable absorption body thin film and corresponding ultrashort pulse fiber laser |
| WO2019134111A1 (en) * | 2018-01-05 | 2019-07-11 | 深圳大学 | Mid-infrared optical fiber laser |
| CN108199254A (en) * | 2018-02-11 | 2018-06-22 | 山东大学 | A kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application |
| CN113437630A (en) * | 2021-06-07 | 2021-09-24 | 中国科学院上海光学精密机械研究所 | Based on 1T-TaS2And its application in laser |
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