CN103996969A - Layered VO2 laser pulse modulation device and application thereof - Google Patents
Layered VO2 laser pulse modulation device and application thereof Download PDFInfo
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- CN103996969A CN103996969A CN201410235281.9A CN201410235281A CN103996969A CN 103996969 A CN103996969 A CN 103996969A CN 201410235281 A CN201410235281 A CN 201410235281A CN 103996969 A CN103996969 A CN 103996969A
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- 238000005086 pumping Methods 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000007787 solid Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims description 102
- 238000000576 coating method Methods 0.000 claims description 102
- 238000007747 plating Methods 0.000 claims description 55
- 238000002310 reflectometry Methods 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 11
- 238000005859 coupling reaction Methods 0.000 claims description 11
- 239000000835 fiber Substances 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical group [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 8
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 8
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 7
- 238000010521 absorption reaction Methods 0.000 claims description 5
- 238000004549 pulsed laser deposition Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical group [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 3
- 229910001751 gemstone Inorganic materials 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000000087 laser glass Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 2
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 abstract 1
- 230000008859 change Effects 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000010923 batch production Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 as shown in Figure 2 Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a layered VO2 laser pulse modulation device and an application of the layered VO2 laser pulse modulation device. The layered VO2 laser pulse modulation device comprises a substrate and a VO2 material deposited on the upper face of the substrate and is used for Q modulation and mode locking of lasers generating near-infrared rays so that a full-solid laser pulse modulation laser device can be produced. The full-solid laser pulse modulation laser device comprises a pumping source, a front endoscope, a laser gain medium, a VO2 modulation device and an output mirror. The VO2 modulation device is placed in a resonant cavity of the full-solid laser device, so that the laser device of a Q modulation device or a mode locking device is produced. The pulse modulation device has the advantages of being easy to manufacture, capable of facilitating industrialization and integration and the like.
Description
Technical field
The present invention relates to Laser Devices technical field, particularly stratiform VO
2laser pulse modulator device and the application in complete solid state pulse laser thereof.
Background technology
Laser is described as one of greatest invention of 20th century, is developed so far and forms a huge industry, has affected or affected the various fields of national economy.Pulse laser, due to advantages such as peak power are high, energy is large, action time is short, is the important directions of laser development for a long time.The important technology of realizing pulse laser has two classes: initiatively modulation and passive modulation.Wherein passive modulation device, due to advantages such as simple to operate, compact conformations, is being played the part of more and more important role in pulse laser.Conventional saturable absorption material mainly contains chromium doped yttrium aluminum garnet (Cr at present
4+: Y
3al
5o
12) and semiconductor saturable absorber, as: SESAM and GaAs.These two kinds of passive modulation devices have following shortcoming: manufacture craft is very complicated; Responsive especially to wavelength modulation range, for different wavelength, its absorption differs greatly, and does not even absorb; Volume is relatively large, is unfavorable for the integrated of micro-nano device.These shortcomings have been brought inconvenience to its application.
Summary of the invention
For the deficiencies in the prior art, the invention provides a kind of stratiform VO
2pulse modulation device and the application in all-solid state laser thereof.
Term explanation:
Stratiform VO
2, refer to the vanadium dioxide film of three-layer laminated structure.
Technical scheme of the present invention is as follows:
A kind of stratiform VO
2pulse modulation device, comprises substrate and is deposited on the VO above substrate
2material, substrate is selected from magnesium fluoride substrate, quartz substrate, Sapphire Substrate or other crystal that laser used is seen through or ceramic material substrate; VO
2material thickness is 10-200 nanometer, adopts vapour deposition, magnetron sputtering and pulsed laser deposition on described substrate.
Preferred according to the present invention, described substrate is polycrystalline quartz plate or magnesium fluoride, and thickness is 1-2mm.
Preferred according to the present invention, described in be deposited on the VO above substrate
2material thickness is 20-70 nanometer.Further preferred 40-60 nanometer.
Preferred according to the present invention, on substrate, be not loaded with VO
2one side be coated with the anti-reflection deielectric-coating that is beneficial to laser generation.The shortcoming that the factors such as this deielectric-coating can, according to the requirement in when application, change the reflectivity of oscillation light, and while overcoming plated film not reflectivity is immutable are brought, is conducive to the design of pulse laser.Light transmission rate >=98% of described anti-reflection finger to specific wavelength.
Described VO
2pulse modulation device can be processed into arbitrary shape well known in the art, preferred, described VO
2pulse modulation device is rectangle or circle.Preferred 1.5-3 × 2 of rectangular dimension, the cm of unit, round diameter is 1.5-3cm.
VO of the present invention
2the preparation method of pulse modulation device is by prior art.VO
2the preparation of pulse modulation device comprises the steps:
(1) adopt pulsed laser deposition on substrate, to deposit VO by prior art
2material; Optionally further comprising the steps of:
(2) on substrate, be not loaded with VO
2one side plate to be conducive to the deielectric-coating of laser generation.
VO of the present invention
2the application of pulse modulation device, near infrared laser is carried out to pulse modulation, comprises and adjusts Q and locked mode.Can produce pulse laser.
Particularly preferred, stratiform VO
2the application of pulse modulation device, for all-solid state laser pulse modulated lasers.
A kind of based on VO
2all-solid state laser pulse modulated lasers, comprise pumping source, front cavity mirror, gain medium, VO
2modulation device, outgoing mirror.Described front cavity mirror and outgoing mirror composition resonant cavity, front cavity mirror plating is with to the high reflecting medium film of laser wavelength, and outgoing mirror plating is with to laser wavelength part reflecting medium film.By described VO
2modulation device is put in the resonant cavity of all solid state laser, makes the laser of Q-switching device or locked mode device.
According to above-mentioned all-solid state laser pulse modulated lasers, described gain medium is all media that can produce laser gain such as semiconductor, laser crystal, laser ceramics or laser glass, be processed into cylinder or cuboid, its end face plates the deielectric-coating of the absorption and the laser generation that are conducive to pump light, can be also not plated film of finishing polish.Preferably, described gain medium is neodymium doped yttrium aluminum garnet (Nd:Y
3al
5o
12, be called for short: Nd:YAG) crystal or pottery, neodymium doped yttrium vanadate (is called for short: Nd:YVO
4) crystal and titanium jewel (abbreviation: Ti:Al
2o
3) crystal, its doping content is that the industry is known.
According to above-mentioned all-solid state laser pulse modulated lasers, described pumping source is the light source that semiconductor laser diode (LD) or xenon lamp etc. can provide pump energy.Pump mode is end pumping or profile pump.
According to above-mentioned all-solid state laser pulse modulated lasers, front cavity mirror, outgoing mirror curvature in resonant cavity can require designed, designed according to resonant cavity, and Resonator design is well known technology.
Describe in detail respectively with regard to the laser of Q-switching device or locked mode device below.Wherein, described " anti-reflection " about deielectric-coating, " high reflection ", " part reflection " have implication well known in the art, " anti-reflection " refers generally to light transmission rate >=95% to specific wavelength, " high reflection " refers generally to reflectivity >=99% to specific wavelength, and " part reflection " refers generally to the reflectivity of specific wavelength between 80%-99%.
1, according to above-mentioned all-solid state laser pulse modulated lasers, preferred, based on VO
2all-solid state laser pulse modulated lasers be end pumping VO
2q-switching device laser:
A kind of end pumping VO
2q-switching device laser, comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, VO
2modulation device, plano-concave outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror form adopts straight chamber, and cavity length is got 1-10cm.Pump light is input in gain medium through fiber coupling system, focusing system and front cavity mirror, produces laser through VO
2after modulation device modulation, pass through again plano-concave outgoing mirror, output Q-switched pulse.
In order to suppress the generation of mode-locked laser, described resonant cavity is more short better, taking length 1cm as good.
Further preferred, described pumping source is the LD laser of emission wavelength 808nm.Described front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m.
Described gain medium is Nd:YAG crystal.
Described plano-concave outgoing mirror radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.05-1.1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
In the time that gain media is exported as 946nm wavelength with Nd:YAG crystal, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.Front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 0.9-1 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 0.9-1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 0.9-1 μ m.
When gain media is Nd:YVO
4during as 1.06 μ m or the output of 1.34 mum wavelengths, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.1. for 1.06 mum wavelengths whens output, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.05-1.1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.2. for 1.34 mum wavelengths whens output, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.3-1.4 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.3-1.4 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.3-1.4 μ m.
When gain media becomes Ti:Al
2o
3during as the wide wavelength output of 700-900nm, pumping source is green glow or the blue laser that is emitted as 500nm left and right, and the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.Front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of pump optical wavelength, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 0.7-0.9 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 0.7-0.9 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 0.7-0.9 μ m.
2, according to above-mentioned all-solid state laser pulse modulated lasers, preferred, based on VO
2all-solid state laser pulse modulated lasers be end pumping VO
2locked mode device laser:
A kind of end pumping VO
2locked mode device laser, comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, plano-concave speculum, VO
2modulation device, average outgoing mirror.The resonant cavity that front cavity mirror and outgoing mirror form adopts v-shaped cavity, and pump light is input in gain medium through fiber coupling system, focusing system and front cavity mirror, after the reflection of plano-concave speculum, passes through VO
2modulation device, finally by average outgoing mirror output mode locking pulse.
Further preferred, described pumping source is the LD laser of emission wavelength 808nm.Front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m.
Described gain medium is Nd:YAG crystal, and pump light incident end face is coated with 808nm, deielectric-coating that 1.05-1.1 μ m is anti-reflection, and on output end face, plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
The concave surface plating of described plano-concave speculum is with the deielectric-coating to the high reflection of 1.05-1.1 μ m.
Described outgoing mirror is near resonant cavity one end plating with the deielectric-coating to the reflection of 1.05-1.1 μ m part, and other end plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
In the time exporting as 946nm wavelength with Nd:YAG crystal, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.Front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 0.9-1 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 0.9-1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 0.9-1 μ m.
When gain media becomes Nd:YVO
4during as 1.06 μ m, 1.34 mum wavelength output, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly.1. for 1.06 mum wavelengths whens output, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.05-1.1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.2. for 1.34 mum wavelengths whens output, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.3-1.4 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.3-1.4 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.3-1.4 μ m.
When gain media becomes Ti:Al
2o
3during as the wide wavelength output of 700-900nm, the deielectric-coating of corresponding front cavity mirror and the plating of outgoing mirror both sides also will change accordingly, and pumping source is green glow or the blue laser that is emitted as 500nm left and right.Front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of pump optical wavelength, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 0.7-0.9 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 0.7-0.9 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 0.7-0.9 μ m.
VO provided by the invention
2when pulse modulation, there is following advantage:
1, stratiform VO
2be at room temperature monoclinic phase, energy gap is 0.5ev left and right; 65-68 DEG C of recurring structure phase transformation, change Tetragonal into, now present metallic state.Under high light, there is saturable absorption characteristic.The present invention also finds VO
2narrow energy gap and be easy to integrated feature, makes it have the incomparable advantage of other materials as pulse modulation device.Can produce pulse laser for pulse laser modulation.
2, manufacture craft is simple, is suitable for batch production: stratiform VO
2preparation method's (vapour deposition, magnetron sputtering and pulsed laser deposition) with comparative maturity, substrate can be selected the various materials such as quartz, magnesium fluoride, sapphire, and the size of its size is decided by the size of its substrate.Just because of the preparation of its material with to the insensitive characteristic of substrate, such modulation device has can industrialization and the potentiality of batch production.
3, be convenient to integrated: stratiform VO
2the semiconductor technology of available maturation is prepared into film on substrate, carries out pulse regulation, and the preparation method of this material has determined that this film can directly deposit on outgoing mirror or laser material, is convenient to material devices integrated design and integrated.
Brief description of the drawings
Fig. 1 is the VO of magnesium fluoride Grown of the present invention
2photo in kind.
Fig. 2 is VO of the present invention
2the structural representation of pulse modulation device, wherein, 1.VO
2, 2. substrate.
Fig. 3 is LD end pumping, based on VO
2all-solid state laser pulse modulated lasers structural representation, VO
2modulation device is as the Laser Devices of Q-switching device, wherein, and 3. pumping source, 4. fiber coupling system, 5. focusing system, 6. front cavity mirror, 7. gain medium, 8.VO
2modulation device, 9. plano-concave outgoing mirror.
Fig. 4 is LD end pumping, based on VO
2all-solid state laser pulse modulated lasers structural representation, VO
2modulation device is as the Laser Devices structural representation of locked mode device, wherein, and 10. plano-concave speculum, 11. average outgoing mirrors.
Embodiment
Describe embodiments of the present invention in detail below in conjunction with accompanying drawing, wherein in the description of the drawings, give identical symbol for identical key element, omit the description repeating.The polycrystalline quartz plate Wujiang quartz ware factory using in embodiment is on sale.
Embodiment 1:
VO
2pulse modulation device, comprises substrate and is deposited on the VO above substrate
2material, as shown in Figure 2, substrate is selected magnesium fluoride substrate, thickness 1mm to structure; Described VO
2material thickness is 50nm, is processed as rectangular sheet, is of a size of 2 × 2cm, and photo in kind as shown in Figure 1.
At the VO of magnesium fluoride Grown
2its preparation method is to utilize the polishing magnesium fluoride single-chip of specific direction as substrate, adopts pulsed laser deposition to obtain.Referring to " Characterization of pulsed laser deposited MoS
2by transmission electron microscopy ", J.Mater.Res, 1993,8 (11): 2933.
The VO of the present embodiment
2pulse modulation device is applied to Q-switching device (embodiment 3) or the locked mode device (embodiment 5) as all-solid state laser pulse modulated lasers in following examples 3,5.
Embodiment 2: as embodiment 1, difference is that substrate is polycrystalline quartz plate, thickness 1-2mm; Described VO
2material thickness is 60nm, is processed as circular piece.Diameter is 2cm.
The VO of the present embodiment
2pulse modulation device is applied to Q-switching device (embodiment 4) or the locked mode device (embodiment 6) as all-solid state laser pulse modulated lasers in following examples 4, embodiment 6.
Embodiment 3: a kind of end pumping VO
2q-switching device laser
As shown in Figure 3, this device comprises pumping source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, gain medium 7, VO to structure
2modulation device 8 and outgoing mirror 9.Wherein VO
2modulation device 8 is the product of embodiment 1.
Pumping source 3 is the LD laser of emission wavelength 808nm.Front cavity mirror 6 is a level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m.Gain medium 7 is Nd:YAG crystal, Nd
3+ion concentration is 0.5at.%, and incident end face is coated with the deielectric-coating anti-reflection to 808nm, 1064nm, and on outgoing end face, plating is with to the anti-reflection deielectric-coating of 1064nm.VO
2the modulation device 8 substrates VO that do not grow
2not plated film of face.The plano-concave mirror that outgoing mirror 9 is 100mm for Radius, concave surface plating is with the deielectric-coating to the reflection of 1.05-1.1 μ m part, and its reflectivity is 80%-99%, and plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.Utilize VO
2material is realized Q-switch laser output, strengthens pump power, can direct output Q-switched pulse laser, and output wavelength is 1.06 μ m.
Embodiment 4: a kind of end pumping VO
2q-switching device laser
As described in Example 3, difference is VO wherein
2modulation device 8 is the product of embodiment 2.
Gain media 7 replaces with Nd:YVO
4(Nd
3+ion concentration is 0.5at.%) export as 1.06 μ m and 1.34 mum wavelengths: during 1. for 1.06 mum wavelengths output, VO
2modulation device 8 is the product of embodiment 2, the quartz substrate VO that do not grow
2face plating with to the anti-reflection deielectric-coating of 1.06 μ m, front cavity mirror 6 be level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with to the high deielectric-coating reflecting of 1.05-1.1 μ m; The plano-concave mirror that outgoing mirror 9 is 100mm for Radius, the plating of its concave surface is taking to the reflection of 1.05-1.1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.Strengthen pump power, can direct output Q-switched pulse laser, output wavelength is 1.06 μ m.2. during for 1.34 mum wavelength output, VO
2modulation device 8 is the product of embodiment 2, the quartz substrate VO that do not grow
2face plating with to the anti-reflection deielectric-coating of 1.34 μ m.Front cavity mirror 6 is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.3-1.4 μ m; The plano-concave mirror that outgoing mirror 9 is 100mm for Radius, the plating of its concave surface is taking to the reflection of 1.3-1.4 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.3-1.4 μ m.Strengthen pump power, can direct output Q-switched pulse laser, output wavelength is 1.3 μ m.
Embodiment 5: a kind of end pumping VO
2locked mode device laser
As shown in Figure 4, this device comprises pumping source 3, fiber coupling system 4, focusing system 5, front cavity mirror 6, gain medium 7, plano-concave speculum 10, VO to structure
2modulation device 8 and outgoing mirror 11 8 parts.Pumping source 3 is the LD laser of emission wavelength 500nm.Front cavity mirror 6 is a level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 500nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 700-900nm.Gain medium 7 is titanium gem crystals, and incident end face is coated with the deielectric-coating anti-reflection to 500nm, 700-900nm, and outgoing end face is coated with the deielectric-coating anti-reflection to 700-900nm.Plano-concave speculum 10 is plano-concave mirror, and concave surface plating is with the deielectric-coating to the high reflection of 700-900nm.VO
2the quartz substrate of modulation device 8 VO that do not grow
2face plate with the anti-reflection film to 700-900nm.Outgoing mirror 11 plates 700-900nm reflectivity is about to 97% part reflecting medium film near resonant cavity one end, and other end plating is with to the anti-reflection deielectric-coating of 700-900nm.Utilize VO
2material is realized mode-locked laser output, strengthens pump power, can directly export Mode-locked laser.
Embodiment 6:
As described in Example 5, difference is VO
2modulation device is the product of embodiment 2, and the VO that do not grow on substrate
2plated surface with to the anti-reflection deielectric-coating of 700-900nm.
Certainly; the present invention also can have other various embodiments; in the situation that not deviating from spirit of the present invention and essence thereof; those of ordinary skill in the art are when making according to the present invention various corresponding changes and modification, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.
Claims (10)
1. a stratiform VO
2pulse modulation device, comprises substrate and is deposited on the VO above substrate
2material, wherein substrate is selected from magnesium fluoride substrate, quartz substrate, Sapphire Substrate or other crystal that laser used is seen through or ceramic material substrate; VO
2material thickness is 10-200 nanometer, adopts vapour deposition, magnetron sputtering and pulsed laser deposition on described substrate.
2. VO as claimed in claim 1
2pulse modulation device, is characterized in that described substrate thickness is 1-2mm; The described VO being deposited on above substrate
2material thickness is 20-70 nanometer.
3. VO as claimed in claim 1
2pulse modulation device, is characterized in that not being loaded with VO on substrate
2one side be coated with the anti-reflection deielectric-coating that is beneficial to laser generation.
4. the VO described in claim 1-3 any one
2the application of modulation device, near infrared laser is carried out to pulse modulation, comprises and adjusts Q and locked mode, produces pulse laser.
5. one kind based on VO
2all-solid state laser pulse modulated lasers, comprise pumping source, front cavity mirror, gain medium, the VO described in claim 1-3 any one
2modulation device, outgoing mirror; Described front cavity mirror and outgoing mirror composition resonant cavity, front cavity mirror plating is with to the high reflecting medium film of laser wavelength, and outgoing mirror plating is with to laser wavelength part reflecting medium film; By described VO
2modulation device is put in the resonant cavity of all solid state laser, makes the laser of Q-switching device or locked mode device.
6. all-solid state laser pulse modulated lasers as claimed in claim 5, it is characterized in that described gain medium is all media that can produce laser gain such as semiconductor, laser crystal, laser ceramics or laser glass, be processed into cylinder or cuboid, its end face plates to be conducive to the absorption of pump light and the deielectric-coating of laser generation or plated film not; Preferably, described gain medium is neodymium doped yttrium aluminum garnet crystal or pottery, neodymium doped yttrium vanadate crystal or titanium gem crystal, and pump mode is end pumping or profile pump.
7. an end pumping VO
2q-switching device laser, comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, the VO described in claim 1-3 any one
2modulation device, plano-concave outgoing mirror; The resonant cavity that front cavity mirror and outgoing mirror form adopts straight chamber, and cavity length is 1-10cm, preferably 1cm; Pump light is input in gain medium through fiber coupling system, focusing system and front cavity mirror, produces laser through described VO
2after modulation device modulation, pass through again plano-concave outgoing mirror, output Q-switched pulse.
8. end pumping VO as claimed in claim 7
2q-switching device laser, is characterized in that:
In the time that gain media is exported as 946nm wavelength with Nd:YAG crystal: front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 0.9-1 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 0.9-1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 0.9-1 μ m;
When gain media is Nd:YVO
4as 1.06 mum wavelengths whens output, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.05-1.1 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m;
When gain media is Nd:YVO
4as 1.34 mum wavelengths whens output, during for 1.34 mum wavelengths output, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.3-1.4 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 1.3-1.4 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 1.3-1.4 μ m;
When gain media becomes Ti:Al
2o
3during as the wide wavelength output of 700-900nm, pumping source is for being emitted as green glow or blue laser, front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of pump optical wavelength, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 0.7-0.9 μ m; Outgoing mirror is plano-concave mirror, and radius is 10-1000mm, and the plating of its concave surface is taking to the reflection of 0.7-0.9 μ m part, the deielectric-coating of reflectivity between 80%-99%, and its plane plating is with to the anti-reflection deielectric-coating of 0.7-0.9 μ m.
9. an end pumping VO
2locked mode device laser, comprises pumping source, fiber coupling system, focusing system, front cavity mirror, gain medium, plano-concave speculum, the VO described in claim 1-3 any one
2modulation device, average outgoing mirror; The resonant cavity that front cavity mirror and outgoing mirror form adopts v-shaped cavity, and pump light is input in gain medium through fiber coupling system, focusing system and front cavity mirror, after the reflection of plano-concave speculum, passes through VO
2modulation device, finally by average outgoing mirror output mode locking pulse.
10. end pumping VO as claimed in claim 9
2locked mode device laser, is characterized in that:
Described pumping source is the LD laser of emission wavelength 808nm; Front cavity mirror is level crossing, near pumping source one end plated surface with to the anti-reflection deielectric-coating of 808nm, near resonant cavity one end plated surface with the deielectric-coating to the high reflection of 1.05-1.1 μ m;
Described gain medium is Nd:YAG
crystal, pump light incident end face is coated with 808nm, deielectric-coating that 1.05-1.1 μ m is anti-reflection, and on output end face, plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m;
The concave surface plating of described plano-concave speculum is with the deielectric-coating to the high reflection of 1.05-1.1 μ m;
Described outgoing mirror is near resonant cavity one end plating with the deielectric-coating to the reflection of 1.05-1.1 μ m part, and other end plating is with to the anti-reflection deielectric-coating of 1.05-1.1 μ m.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107419333A (en) * | 2017-07-07 | 2017-12-01 | 山东大学 | A kind of preparation method of high mobility niobium doped stannum oxide monocrystal thin films |
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| USH461H (en) * | 1978-11-30 | 1988-04-05 | Non-reflective/reflective phase transition optical modulator | |
| CN103368057A (en) * | 2013-07-03 | 2013-10-23 | 山东大学 | Two-dimensional MoS2 laser pulse modulation device and pulse modulated laser for all-solid state laser |
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2014
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USH461H (en) * | 1978-11-30 | 1988-04-05 | Non-reflective/reflective phase transition optical modulator | |
| CN103368057A (en) * | 2013-07-03 | 2013-10-23 | 山东大学 | Two-dimensional MoS2 laser pulse modulation device and pulse modulated laser for all-solid state laser |
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| S.A.POLLACK等: "Passive Q switching and mode-locking of Er:glass lasers using V02 mirrors", 《J.APPL.PHYS.》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107419333A (en) * | 2017-07-07 | 2017-12-01 | 山东大学 | A kind of preparation method of high mobility niobium doped stannum oxide monocrystal thin films |
| CN107419333B (en) * | 2017-07-07 | 2019-10-01 | 山东大学 | A kind of preparation method of high mobility niobium doped stannum oxide monocrystal thin films |
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Effective date of registration: 20231108 Address after: 250000 f1-7-701, Innovation workshop, No. 2016, Feiyue Avenue, high tech Zone, Jinan, Shandong Province Patentee after: JINAN JINGZHONG OPTOELECTRONICS TECHNOLOGY CO.,LTD. Address before: 250100, No. 27, Da Nan Road, Licheng District, Shandong, Ji'nan Patentee before: SHANDONG University |