CN108199254A - A kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application - Google Patents
A kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application Download PDFInfo
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- CN108199254A CN108199254A CN201810171383.7A CN201810171383A CN108199254A CN 108199254 A CN108199254 A CN 108199254A CN 201810171383 A CN201810171383 A CN 201810171383A CN 108199254 A CN108199254 A CN 108199254A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 144
- 239000010703 silicon Substances 0.000 title claims abstract description 144
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims abstract description 43
- 239000000463 material Substances 0.000 claims abstract description 43
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- 238000000576 coating method Methods 0.000 claims description 72
- 238000005086 pumping Methods 0.000 claims description 61
- 230000003667 anti-reflective effect Effects 0.000 claims description 36
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 14
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
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- 239000000835 fiber Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 11
- 238000002310 reflectometry Methods 0.000 claims description 10
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 8
- 229910052724 xenon Inorganic materials 0.000 claims description 8
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910017502 Nd:YVO4 Inorganic materials 0.000 claims description 7
- 229910052779 Neodymium Inorganic materials 0.000 claims description 7
- 235000019441 ethanol Nutrition 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
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- QWVYNEUUYROOSZ-UHFFFAOYSA-N trioxido(oxo)vanadium;yttrium(3+) Chemical compound [Y+3].[O-][V]([O-])([O-])=O QWVYNEUUYROOSZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 3
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 241000931526 Acer campestre Species 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- -1 English Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
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- 230000009471 action Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
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- 239000000126 substance Substances 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/161—Solid materials characterised by an active (lasing) ion rare earth holmium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/1671—Solid materials characterised by a crystal matrix vanadate, niobate, tantalate
- H01S3/1673—YVO4 [YVO]
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Lasers (AREA)
Abstract
The present invention relates to a kind of Laser pulse modulator device based on silicon nanometer sheet and preparation method and application, silicon nanometer sheet Laser pulse modulator device is made by silicon crystal, including substrate and the silicon nanometer sheet material for being deposited on substrate face.Silicon nanometer sheet Laser pulse modulator device is inserted into the laser resonance intracavitary of continuous or long pulse operating, can realize that short-pulse laser exports.Silicon nanometer sheet Laser pulse modulator device of the present invention, has the advantage that：(1) silicon nanometer sheet material has the characteristic insensitive to wavelength, it can be achieved that modulation to visible infrared band laser.(2) silicon nanometer sheet can be made by clay, and abundant raw material is cheap, and manufacture craft is simple, suitable for batch production.(3) convenient for integrated：It can be prepared into film on substrate with ripe technique, realize the integrated design from material to device and integrate.
Description
Technical field
The present invention relates to a kind of Laser pulse modulator devices based on silicon nanometer sheet and preparation method and application, belong to laser
Technical field.
Background technology
Since the sixties in last century, first of world ruby laser came out, laser developments have formed one so far
Huge industry has important application in fields such as industry, national defence, science and technology, medicine and the consumer goods.Wherein pulse laser has
There are the advantages such as peak power is high, energy is big, the burst length is short, be the important component and developing direction of laser.Realize pulse
The technology of laser is broadly divided into two classes：Actively modulation and passive modulation.Wherein passive modulation refers to through material satisfying in itself
The loss for generating process to laser with absorption characteristic is adjusted, so as to obtain pulse laser.This modulation system has operation
Simply, it is compact-sized, low energy consumption etc., and advantages, the application in pulse laser are more and more common.Currently used saturable absorption
Material has been broadly divided into two classes：Insulating material with special ion doping (such as mixes the yag crystal Cr of chromium:YAG)
With semi-conducting material (such as GaAs and SESAM).This two classes material has preparation process complexity, saturable absorption performance for wave
With very strong dependence, volume is relatively large, the cost is relatively high the shortcomings of, therefore application range is subject to certain restrictions.Mesh
Before, people are still trying to explore novel, and performance is more excellent, comprehensive saturable absorption material.
In recent years, the two-dimensional material using graphene as representative obtains in many fields such as biology, medicine, communication, microelectronics
Extensive research and application.In optics aspect, two-dimensional material has the spies such as absorption bands are wide, the response time is short, optical loss is low
Point, therefore in Laser Modulation field, also receive more and more attention, such as graphene (G), black phosphorus (BP), topological insulator
(Bi2Se3), transition metal oxide (VO2) etc. New Two Dimensionals material Laser Modulation device has been used as to apply in solid state laser
In.But in practical applications, however it remains some problems, as there is graphene low modulation depth and larger unsaturation to damage
Consumption, black phosphorus is highly unstable in the environment, can degrade within a few hours, and topological insulator needs complicated preparation process etc..Cause
This, people are still trying to explore the more excellent performance of two-dimensional material of Laser Modulation.Silicon is the most important material of modern electronic technology
Material, candidate material of the silicon nanometer sheet as anode of lithium ion battery, portable electronic device, large size available for high-energy density
The fields such as energy-storage system and electric vehicle.Up to the present, it is relatively fewer in the application of optical field about silicon nanometer sheet, it does not send out
The now report about silicon nanometer sheet saturable absorption effect and its as Laser pulse modulator device.
Invention content
In view of the deficiencies of the prior art, the present invention provides a kind of Laser pulse modulator devices based on silicon nanometer sheet；
The present invention also provides above-mentioned Laser pulse modulator device preparation method and above-mentioned Laser pulse modulator device entirely solid
Application in state laser；
Term is explained
1st, above substrate：Refer to be loaded with the upper surface of silicon nanometer sheet material.
2nd, substrate back：Refer to not be loaded with the one side of silicon nanometer sheet material on substrate.
3rd, it is anti-reflection：Refer generally to be not less than 95% to the light transmission rate of specific wavelength.
4th, high reflection refers generally to be not less than 99% to the light reflectivity of specific wavelength.
5th, part is reflected, and is referred generally to the light reflectivity of specific wavelength between 40%-99%.
The technical scheme is that：
A kind of Laser pulse modulator device based on silicon nanometer sheet, including substrate and the silicon nanometer being deposited on above the substrate
Sheet material.
Silicon nanometer sheet material is as made from blocky silicon crystal of the purity not less than 99.99% using liquid phase stripping method, thickness
Two-dimentional elementary silicon material for Nano grade.
Compared with existing known Laser pulse modulator device, the present invention is based on the Laser pulse modulator device of silicon nanometer sheet, tools
There is following advantage：(1) silicon nanometer sheet material has the characteristic insensitive to wavelength, it can be achieved that visible infrared band laser
Modulation.(2) silicon nanometer sheet can be made by clay, and abundant raw material is cheap, and manufacture craft is simple, suitable for batch production.(3)
Convenient for integrated：It can be prepared into film on substrate with ripe technique, realize the integrated design from material to device and integrate.
According to currently preferred, the thickness of the substrate is 0.5-3mm；The thickness of the silicon nanometer sheet material is 1-
50nm。
It is further preferred that the thickness of the silicon nanometer sheet material is 5-20nm.
Most preferably, the thickness of the substrate is 2mm；The thickness of the silicon nanometer sheet material is 5nm.
According to currently preferred, the substrate is crystal, glass or ceramic material.
It is further preferred that the substrate is quartz substrate or Sapphire Substrate.
According to currently preferred, the substrate back is plated with the deielectric-coating for being conducive to laser generation.Be conducive to laser to shake
The requirement when deielectric-coating swung can be applied according to impulse modulation device realizes the variable controllable of reflectivity, when overcoming not plated film
The shortcomings that factors such as reflectivity is immutable are brought, is conducive to the design of pulse laser.For example, as gain media Nd:YAG is brilliant
When body is exported as 946nm wavelength, substrate back is coated with the antireflective deielectric-coating to 946nm
Laser pulse modulator device of the present invention based on silicon nanometer sheet, can be prepared into arbitrary shape, it is preferred that institute
The Laser pulse modulator device based on silicon nanometer sheet stated is rectangle or circle.
The application of the Laser pulse modulator device based on silicon nanometer sheet of the present invention, for carrying out arteries and veins to visible or infrared laser
Modulated, including passive Q-adjusted or passive mode-locking.
The preparation method of the above-mentioned Laser pulse modulator device based on silicon nanometer sheet, including：
(1) blocky silicon crystal grinding 10-40min of the 0.1-1g purity not less than 99.99% is taken, obtains silicon crystal powder；
(2) silicon crystal powder that step (1) obtains is mixed with ethyl alcohol, the mixed proportion of silicon crystal powder and ethyl alcohol is 1-2mg/
Ml, ultrasonic disperse stand 3 days after 2 hours；
(3) supernatant liquor that step (2) is taken to obtain, is spin-coated on above substrate, in 25 DEG C of environment dry to get.
According to currently preferred, execution following steps after the step (3)：It is plated in substrate back and is conducive to laser
The deielectric-coating of oscillation.
A kind of all solid state laser based on silicon nanometer sheet pulse-modulator, including the first pumping placed successively along light path
Source, the first front cavity mirror, first laser gain media, the Laser pulse modulator device based on silicon nanometer sheet, the first outgoing mirror.
The silicon nanometer sheet Laser pulse modulator device is put in resonator, pump light is input to through the first front cavity mirror
In one laser gain medium, the laser of generation is through the Laser pulse modulator device modulation based on silicon nanometer sheet, from the first outgoing mirror one
Hold output Q-switched or mode-locked laser pulse.
The characteristic insensitive to wavelength is had based on silicon nanometer sheet material, it is of the invention based on silicon nanometer sheet pulse-modulator
All solid state laser can realize modulation to visible infrared band laser.Silicon nanometer sheet pulse-modulator based on the present invention
Manufacture craft is simple and is convenient for the characteristics of integrated, and all solid state laser of the invention based on silicon nanometer sheet pulse-modulator is convenient for
It realizes integrated design and integrates.
According to currently preferred, first front cavity mirror and first outgoing mirror composition resonator, before described first
Cavity mirror plating is plated with the medium reflected laser wavelength part with the deielectric-coating to laser wavelength high reflection, first outgoing mirror
Film.
According to currently preferred, first pumping source is semiconductor laser diode (LD) or xenon lamp；Pumping is provided
Energy.
The first laser gain media is all solid dielectrics that can generate laser gain, in cylinder or rectangular
Body, end face polish or are plated with the deielectric-coating for being conducive to Pumping light absorption and laser generation.For example, as gain media Nd:YAG
When crystal is exported as 946nm wavelength, incident end face is coated with the antireflective deielectric-coating to 808nm, 946nm, and outgoing end face is coated with pair
The antireflective deielectric-coating of 946nm.
It is further preferred that the first laser gain media is laser crystal, laser glass or laser ceramics.
Most preferably, the first laser gain media is neodymium doped yttrium aluminum garnet (Nd:YAG) crystal or neodymium doping vanadium
Sour yttrium (Nd:YVO4) crystal.The doping concentration of neodymium ion presses this field routine techniques.
The resonator parameter of above-mentioned all solid state laser can designed, designed, such as curvature of the hysteroscope of composition resonator, output
Coupling transmitance of mirror etc., and total reflective mirror can be added according to actual needs to change lumen type, relevant design is well known in the art
Technology.
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping, including placed successively along light path the second pumping source,
One fiber coupling system, the first focusing system, the second front cavity mirror, second laser gain media, the swashing based on silicon nanometer sheet
Light pulse modulator, the second outgoing mirror.
The characteristic insensitive to wavelength is had based on silicon nanometer sheet material, it is of the invention based on silicon nanometer sheet pulse-modulator
Passive Q-regulaitng laser can realize to the output of the Q-switch laser of visible infrared band.Silicon nanometer sheet pulse tune based on the present invention
Device manufacture craft processed is simple and is convenient for the characteristics of integrated, the passively Q switched laser of the invention based on silicon nanometer sheet pulse-modulator
Device is easy to implement integrated design and integrates.
Pump light is input to laser gain medium through the first fiber coupling system, the first focusing system and the second front cavity mirror
In, the laser of generation is through the Laser pulse modulator device modulation based on silicon nanometer sheet, from the second output Q-switched pulse in outgoing mirror one end.
According to currently preferred, second front cavity mirror and second outgoing mirror composition resonator, the resonator
Length is 1-10cm.
It is further preferred that the cavity length is 1cm.In order to inhibit the generation of mode-locked laser, the resonator is got over
It is short better, it is preferred with length 1cm.
According to currently preferred, second pumping source is the laser diode (LD) that launch wavelength is 808nm；
Second front cavity mirror is plane mirror, is plated with close to the surface of one end of first focusing system and 808nm is increased
Saturating deielectric-coating is plated with the medium to 1.05-1.1 μm of high reflection close to the surface of the other end of the second laser gain media
Film；
The second laser gain media is Nd:YAG crystal；
Second outgoing mirror is plano-concave mirror, and the concave surface of second outgoing mirror is plated with what 1.05-1.1 μm of part was reflected
Deielectric-coating, the plane of second outgoing mirror are plated with the antireflective deielectric-coating to 1.05-1.1 μm, the concave surface of second outgoing mirror
Radius of curvature be 20-1000mm.
A kind of end pumping laser with active-passive lock mould, including third pumping source, the second optical fiber coupling placed successively along light path
It is collaboration system, the second focusing system, third front cavity mirror, third laser gain medium, plano-concave speculum, described based on silicon nanometer sheet
Laser pulse modulator device, third outgoing mirror.
Pump light is input to third laser gain through the second fiber coupling system, the second focusing system and third front cavity mirror and is situated between
In matter, produced laser is modulated after the reflection of plano-concave speculum by the Laser pulse modulator device based on silicon nanometer sheet, most afterwards through the
Three outgoing mirrors export mode locking pulse.
The characteristic insensitive to wavelength is had based on silicon nanometer sheet material, it is of the invention based on silicon nanometer sheet pulse-modulator
End pumping laser with active-passive lock mould can realize to the output of the mode-locked laser of visible infrared band.Silicon based on the present invention is received
Rice piece pulse-modulator manufacture craft is simple and is convenient for the characteristics of integrated, the end of the invention based on silicon nanometer sheet pulse-modulator
Face-pumping laser with active-passive lock mould is easy to implement integrated design and integrates.
According to currently preferred, the third front cavity mirror, the plano-concave speculum and third outgoing mirror composition V-type
Resonator.
According to currently preferred, laser diode (LD) of the third pumping source for launch wavelength 808nm；
The third front cavity mirror is plane mirror, is plated with close to the surface of one end of second focusing system and 808nm is increased
Saturating deielectric-coating is plated with the medium to 1.05-1.1 μm of high reflection close to the surface of one end of the third laser gain medium
Film；
The third laser gain medium is Nd:YVO4Crystal；The incident end face of the third laser gain medium is coated with
To 808nm, 1.05-1.1 μm of antireflective deielectric-coating, it is plated on the outgoing end face of the third laser gain medium to 1.05-1.1
μm antireflective deielectric-coating；
The concave surface of the plano-concave speculum is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The third outgoing mirror is plane mirror, is plated with close to the surface of described V-type resonator one end anti-to 1.05-1.1 μm
The part reflecting medium film that rate is 97% is penetrated, another end surfaces are plated with the antireflective deielectric-coating to 1.05-1.1 μm.
A kind of profile pump passive Q-regulaitng laser, including placed successively along light path the 4th front cavity mirror, the 4th pumping source,
4th laser gain medium, the Laser pulse modulator device based on silicon nanometer sheet, the 4th outgoing mirror.
Pump light is inputted from the 4th laser gain medium side, and produced laser passes through the laser pulse tune based on silicon nanometer sheet
Again through the 4th output Q-switched pulse of outgoing mirror after device modulation processed.
The characteristic insensitive to wavelength is had based on silicon nanometer sheet material, it is of the invention based on silicon nanometer sheet pulse-modulator
Profile pump passive Q-regulaitng laser can realize to the output of the Q-switch laser of visible infrared band.Silicon nanometer based on the present invention
Piece pulse-modulator manufacture craft is simple and is convenient for the characteristics of integrated, the side of the invention based on silicon nanometer sheet pulse-modulator
Pumping passive Q-regulaitng laser is easy to implement integrated design and integrates.
According to currently preferred, the 4th front cavity mirror, the 4th outgoing mirror composition linear type resonator.
According to currently preferred, the 4th front cavity mirror is plane mirror, close to the one of the 4th laser gain medium
The surface at end is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
4th pumping source is xenon lamp or has the function of the LD array modules of profile pump；
4th laser gain medium is Nd:YAG crystal；Nd3+Ion doping concentration presses this field routine techniques；
4th outgoing mirror is plated with close to the end surface of the 4th laser gain medium reflects 1.05-1.1 μm
Rate is 60% deielectric-coating, and the other end is plated with the antireflective deielectric-coating to 1.05-1.1 μm；
Beneficial effects of the present invention are：
1st, the present invention utilizes the characteristic of semiconductor of silicon nanometer sheet material, such material is under strong light action, the suction for light
Receipts have saturated characteristic, continuous laser can be modulated as saturable absorber, generate pulse output.Silicon nanometer sheet material
With, it can be achieved that from visible infrared broadband Laser Modulation, playing universal switch to the insensitive absorption characteristic of wavelength
Effect.
2nd, manufacture craft is simple, of low cost, suitable for batch production.The making raw material of silicon nanometer sheet can select clay, and
Clay is the substance of nature generally existing.Silicon nanometer sheet has preparation method (vapor deposition, the liquid phase stripping of comparative maturity simultaneously
From or mechanical stripping).
3rd, convenient for integrated, silicon nanometer sheet material can be prepared into film on substrate with ripe technique, and stone can be selected in substrate
The a variety of materials such as English, sapphire, the size of size depend on the size of substrate.It also can be directly in outgoing mirror or laser material
Upper deposition convenient for material devices integrated design and integrates.It, should just because of convenient and insensitive to the substrate characteristic of its preparation
Class modulation device have can industrialization and batch production potentiality.
Description of the drawings
Fig. 1 is the experimental provision of the saturable absorption characteristic of test silicon nanometer sheet in embodiment 1；
Fig. 2 is the result schematic diagram of the saturable absorption when optical maser wavelength is 532nm；
Fig. 3 is the result schematic diagram of the saturable absorption when optical maser wavelength is 1064nm；
Fig. 4 is a kind of structure diagram of the silicon nanometer sheet passive Q-regulaitng laser of end pumping in embodiment 7；
Fig. 5 (a) is the average output power signal of Q-switched laser in embodiment 7 when laser work wavelength is 946nm
Figure；
Fig. 5 (b) is the pulse width schematic diagram of Q-switched laser in embodiment 7 when laser work wavelength is 946nm；
Fig. 5 (c) is the repetition rate schematic diagram of Q-switched laser in embodiment 7 when laser work wavelength is 946nm；
Fig. 5 (d) is when laser work wavelength is 946nm, and the pulse train of Q-switched laser and waveform show in embodiment 7
It is intended to；
Fig. 6 (a) is the average output power signal of Q-switched laser in embodiment 8 when laser work wavelength is 1.06 μm
Figure；
Fig. 6 (b) is the pulse width signal in embodiment 8 in Q-switched laser when laser work wavelength is 1.06 μm
Figure；
Fig. 6 (c) is the repetition rate schematic diagram of Q-switched laser in embodiment 8 when laser work wavelength is 1.06 μm；
Fig. 6 (d) is when laser work wavelength is 1.06 μm, and the pulse train of Q-switched laser and waveform show in embodiment 8
It is intended to；
Fig. 7 (a) is the average output power signal of Q-switched laser in embodiment 9 when laser work wavelength is 1.34 μm
Figure；
Fig. 7 (b) is the pulse width schematic diagram of Q-switched laser in embodiment 9 when laser work wavelength is 1.34 μm；
Fig. 7 (c) is the repetition rate schematic diagram of Q-switched laser in embodiment 9 when laser work wavelength is 1.34 μm；
Fig. 7 (d) is when laser work wavelength is 1.34 μm, and the pulse train of Q-switched laser and waveform show in embodiment 9
It is intended to；
Fig. 8 is the structure diagram of end pumping laser with active-passive lock mould described in embodiment 10；
Fig. 9 is a kind of 11 xenon lamp profile pump silicon nanometer sheet passive Q-regulaitng laser structure diagram of embodiment；
1st, pumping source, 2, spectroscope, 3, silicon nanometer sheet suspension 4, the first energy meter, the 5, second energy meter, the 6, second pump
Pu source, the 7, first fiber coupling system, the 8, first focusing system, the 9, second front cavity mirror, 10, second laser gain media, 11, silicon
Nanometer sheet Laser pulse modulator device, the 12, second outgoing mirror, 13, third pumping source, the 14, second fiber coupling system, 15, second
Focusing system, 16, third front cavity mirror, 17, third laser gain medium, 18, plano-concave speculum, 19, third outgoing mirror, 20,
Four front cavity mirrors, the 21, the 4th pumping source, the 22, the 4th laser gain medium, the 23, the 4th outgoing mirror.
Specific embodiment
The present invention is further qualified with embodiment with reference to the accompanying drawings of the specification, but not limited to this.
Embodiment 1
A kind of Laser pulse modulator device based on silicon nanometer sheet including substrate and is deposited on substrate the silicon Nano sheet material in face
Material.Silicon nanometer sheet material is as made from blocky silicon crystal of the purity not less than 99.99% uses liquid phase stripping method, thickness is nanometer
The two-dimentional elementary silicon material of rank.
The thickness of substrate is 0.5-3mm；The thickness of silicon nanometer sheet material is 1-50nm.
Substrate is the crystal, glass or ceramic material to laser light used.
We have found that the suspension of silicon nanometer sheet has strong saturable absorption spy for the first time in non-linear transmission test
Property, i.e., transmitance is relatively low in low light irradiation, and transmitance significantly improves in strong illumination.Experimental provision is as shown in Figure 1, packet
It (is mixed with ethyl alcohol containing pumping source 1, spectroscope 2, silicon nanometer sheet suspension 3, is placed on the twin polishing quartz ratio that thickness is 1mm
In color ware), the first energy meter 4, the second energy meter 5.Pumping source 1 is electric-optically Q-switched Nd:YAG pulse lasers (wavelength 1064nm,
Pulse width 19ns, wavelength 532nm, pulse width 16ns, working frequency 10Hz after frequency multiplication), spectroscope 2 goes out pumping source 1
Irradiating light beam is divided into two beams, and for light beam one through being radiated on the first energy meter 4 after silicon nanometer sheet suspension 3, light beam two is radiated at the
It is used as on two energy meters 5 with reference to light beam.
In experimentation, gradually the projectile energy of increase pumping source laser, beam energy density gradually rise.Pass through monitoring
The data of energy meter 4 and energy meter 5 obtain transmitance of the silicon nanometer sheet under different capacity density, experimental result such as Fig. 2 and figure
Shown in 3.In Fig. 2, when incident wavelength is 532nm, with the increase of incident optical power density, the transmitance of silicon nanometer sheet suspension by
It is cumulative big, show that silicon nanometer sheet suspension has saturable absorption phenomenon in 532nm；In Fig. 3, when incident wavelength is 1064nm,
With the increase of incident optical power density, the transmitance of silicon nanometer sheet suspension gradually increases, and shows that silicon nanometer sheet suspension exists
1064nm has saturable absorption phenomenon.For the two wavelength, ethyl alcohol (is placed on the twin polishing quartz ratio that thickness is 1mm
In color ware) do not have saturable absorption phenomenon under same experimental conditions.Show that silicon nanometer sheet has broadband saturable absorption
Characteristic can be used as passive modulation element to generate short pulse, high-peak power laser.
Embodiment 2
According to a kind of Laser pulse modulator device based on silicon nanometer sheet described in embodiment 1, difference lies in,
The thickness of substrate is 2mm；The thickness of silicon nanometer sheet material is 5nm.
Substrate is quartz substrate or Sapphire Substrate.
Be conducive to the deielectric-coating of laser generation in substrate back plating.The deielectric-coating for being conducive to laser generation can be according to pulse
The factors such as the variable controllable of reflectivity is realized in requirement when modulation device is applied, and reflectivity is immutable when overcoming not plated film are brought
The shortcomings that, be conducive to the design of pulse laser.
Laser pulse modulator device of the present invention based on silicon nanometer sheet, can be prepared into arbitrary shape, it is preferred that institute
The Laser pulse modulator device based on silicon nanometer sheet stated is rectangle or circle.
The application of the Laser pulse modulator device based on silicon nanometer sheet of the present invention, for carrying out arteries and veins to visible or infrared laser
Modulated, including passive Q-adjusted or passive mode-locking.
Embodiment 3
The preparation method of the Laser pulse modulator device based on silicon nanometer sheet described in embodiment 2, is made by silicon crystal, tool
Body step includes：
(1) the blocky silicon crystal that purity is 99.999% is ground into 30min in agate mortar；
(2) the silicon crystal powder of acquisition is mixed with ethyl alcohol, ultrasonic disperse stands 3 days after 2 hours；
(3) supernatant liquor is taken, is spin-coated on a diameter of 20mm, thickness is on the circular quartz substrate of 2mm, is done in room temperature environment
It is dry.
(4) it is plated in substrate back and is conducive to the deielectric-coating of laser generation.
Embodiment 4
A kind of all solid state laser based on silicon nanometer sheet pulse-modulator, including the first pumping placed successively along light path
Source, the first front cavity mirror, first laser gain media, the Laser pulse modulator device based on silicon nanometer sheet described in embodiment 2, first
Outgoing mirror.Silicon nanometer sheet Laser pulse modulator device is put in resonator, is formed and adjusts Q or mode-locked laser output.
First front cavity mirror and the first outgoing mirror composition resonator, the first front cavity mirror are plated with the medium to laser wavelength high reflection
Film, the first outgoing mirror are plated with the deielectric-coating reflected laser wavelength part.
First pumping source is semiconductor laser diode (LD) or xenon lamp；Pump energy is provided.
First laser gain media is all solid dielectrics that can generate laser gain, in cylinder or cuboid,
End face polishes or is plated with the deielectric-coating for being conducive to Pumping light absorption and laser generation；
In the embodiment resonator parameter of all solid state laser can designed, designed, such as form resonator hysteroscope song
Rate, coupling transmitance of outgoing mirror etc., and total reflective mirror can be added according to actual needs to change lumen type, relevant design is this field
Well known technology.
Embodiment 5
A kind of all solid state laser based on silicon nanometer sheet pulse-modulator according to embodiment 4, difference lies in,
First laser gain media is laser crystal, laser glass or laser ceramics.As gain media Nd:YAG crystal
When being exported as 946nm wavelength, incident end face is coated with the antireflective deielectric-coating to 808nm, 946nm, and outgoing end face is coated with to 946nm
Antireflective deielectric-coating；As gain media Nd:When YAG crystal is exported as 1.06 mum wavelengths, incident end face be coated with to 808nm,
1.06 μm of antireflective deielectric-coating, outgoing end face are coated with to 1.06 μm of antireflective deielectric-coating；As gain media Nd:YAG crystal is made
When being exported for 1.34 mum wavelengths, incident end face is coated with to 808nm, 1.34 μm of antireflective deielectric-coating, and outgoing end face is coated with to 1.34 μ
The antireflective deielectric-coating of m.
Embodiment 6
A kind of all solid state laser based on silicon nanometer sheet pulse-modulator according to embodiment 4, difference lies in,
First laser gain media is neodymium doped yttrium aluminum garnet (Nd:YAG) crystal or neodymium doped yttrium vanadate (Nd:YVO4)
Crystal.Nd:Nd in YAG crystal3+Ion concentration is 0.01-4at.%, neodymium doped yttrium vanadate Nd:YVO4Nd in crystal3+Ion is dense
It spends for 0.01-10at.%.
Embodiment 7
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping, as shown in figure 4, including placed successively along light path
Two pumping sources 6, the first focusing system 8, the second front cavity mirror 9, second laser gain media 10, are implemented first fiber coupling system 7
The Laser pulse modulator device 11 based on silicon nanometer sheet, the second outgoing mirror 12 described in example 2.
Pump light is input to second laser through the first fiber coupling system 7, the first focusing system 8 and the second front cavity mirror 9 and increases
In beneficial medium 10, the laser of generation is modulated through the Laser pulse modulator device 11 based on silicon nanometer sheet, from 12 one end of the second outgoing mirror
Output Q-switched pulse.
Second front cavity mirror 9 and the second outgoing mirror 12 composition resonator, cavity length 27mm.
Second pumping source 6 is the laser diode (LD) that launch wavelength is 808nm；
Second front cavity mirror 9 is plane mirror, and the second front cavity mirror 9 is plated with pair close to the surface of described first focusing system, 8 one end
The antireflective deielectric-coating of 808nm, 1064nm, the second front cavity mirror 9 are plated with close to the surface of described 10 one end of second laser gain media
To 0.9-1.0 μm of high reflection, the deielectric-coating of 1064nm high transmissions.
Second laser gain media 10 is Nd:YAG crystal, Nd3+Ion concentration is 0.4at.%；Incident end face is coated with pair
The antireflective deielectric-coating of 808nm, 946nm, 1064nm is emitted on end face and is plated with the antireflective deielectric-coating to 946nm, 1064nm.
Second outgoing mirror 12 is plano-concave mirror, and a diameter of 20mm, radius of curvature 50mm, the concave surface of the second outgoing mirror 12 is plated with
It is anti-reflection to 1064nm, 0.9-1.0 μm part reflection deielectric-coating, 946nm at reflectivity be 95%, the second outgoing mirror 12 it is another
The surface of one end is plated with to 1064nm, 0.9-1.0 μm of antireflective deielectric-coating.
When laser work wavelength is 946nm, the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping is averaged
Shown in output power such as Fig. 5 (a), maximum average output power 163mW.
Shown in pulse width such as Fig. 5 (b) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, most narrow arteries and veins
Width is 200.2ns.
Shown in repetition rate such as Fig. 5 (c) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, highest weight
Complex frequency 294.5kHz.
The pulse train of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping and single pulse waveforms such as Fig. 5 (d)
It is shown.
Embodiment 8
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping according to embodiment 7, difference lies in,
Second front cavity mirror 9 is plated with the antireflective deielectric-coating to 808nm close to the surface of described first focusing system, 8 one end, the
Two front cavity mirrors 9 are plated with the deielectric-coating to 1.05-1.1 μm of high reflection close to the surface of 10 one end of second laser gain media.
Second outgoing mirror 12 is plano-concave mirror, and a diameter of 20mm, radius of curvature 100mm, the concave surface of the second outgoing mirror 12 is plated
With the deielectric-coating to 1.05-1.1 μm of part reflection, reflectivity is 90% at 1064nm.The other end of second outgoing mirror 12
Surface is plated with the antireflective deielectric-coating to 1.05-1.1 μm.
Second front cavity mirror 9 and the second outgoing mirror 12 composition resonator, cavity length 25mm；
When laser work wavelength is 1.06 μm, the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping is put down
Shown in equal output power such as Fig. 6 (a), maximum average output power 131mW.
Shown in pulse width such as Fig. 6 (b) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, most narrow arteries and veins
Width is 103.7ns.
Shown in repetition rate such as Fig. 6 (c) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, highest weight
Complex frequency 587kHz.
The pulse train of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping and single pulse waveforms such as Fig. 6 (d)
It is shown.
Embodiment 9
A kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping according to embodiment 7, difference lies in,
Second front cavity mirror 9 is plated with the antireflective deielectric-coating to 808nm, 1064nm close to the surface of 8 one end of the first focusing system,
Second front cavity mirror 9 is plated with close to the surface of 10 one end of second laser gain media to 1.3-1.4 μm of high reflection, 1064nm high transmissions
Deielectric-coating.
Second laser gain media 10 is Nd:YVO4Crystal, Nd3+Ion concentration is 0.5at.%；Incident end face is coated with pair
808nm, 1064nm, 1.34 μm of antireflective deielectric-coating, outgoing end face are coated with to 1064nm, 1.34 μm of antireflective deielectric-coating.
Second outgoing mirror 12 is plano-concave mirror, and a diameter of 20mm, radius of curvature 100mm, the concave surface of the second outgoing mirror 12 is plated
With the deielectric-coating that, 1.3-1.4 μm part anti-reflection to 1064nm is reflected, reflectivity is 90% at 1342nm, the second outgoing mirror 12
The surface of the other end be plated with to 1064nm, 1.3-1.4 μm of antireflective deielectric-coating.
When laser work wavelength is 1.34 μm, the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping is put down
Shown in equal output power such as Fig. 7 (a), maximum average output power 79mW.
Shown in pulse width such as Fig. 7 (b) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, most narrow arteries and veins
Width is 110.4ns.
Shown in repetition rate such as Fig. 7 (c) of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping, highest weight
Complex frequency 570kHz.
The pulse train of the silicon nanometer sheet passive Q-regulaitng laser of the present embodiment end pumping and single pulse waveforms such as Fig. 7 (d)
It is shown.
Embodiment 10
A kind of end pumping laser with active-passive lock mould, as shown in figure 8, including the third pumping source placed successively along light path
13rd, the second fiber coupling system 14, the second focusing system 15, third front cavity mirror 16, third laser gain medium 17, plano-concave reflection
The Laser pulse modulator device 11 based on silicon nanometer sheet, third outgoing mirror 19 described in mirror 18, embodiment 2.
Pump light is input to third laser through the second fiber coupling system 14, the second focusing system 15 and third front cavity mirror 16
In gain media 17, produced laser is adjusted after the reflection of plano-concave speculum 18 by the Laser pulse modulator device 11 based on silicon nanometer sheet
System most exports mode locking pulse through third outgoing mirror 19 afterwards.
Third front cavity mirror 16, plano-concave speculum 18 and third outgoing mirror 19 form V-type resonator.
Third pumping source 13 is the laser diode (LD) of launch wavelength 808nm；
Third front cavity mirror 16 is the plane mirror of diameter 20mm, and the end surface close to the second focusing system 15 is plated with pair
The antireflective deielectric-coating of 808nm, the surface of the other end are plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
Third laser gain medium 17 is Nd:YVO4Crystal, Nd3+Ion concentration is 0.5at.%；Incident end face is coated with pair
The antireflective deielectric-coating of 808nm, 1064nm is emitted on end face and is plated with the antireflective deielectric-coating to 1064nm；
The concave surface of plano-concave speculum 18 is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
Third outgoing mirror 19 is flat output mirror, and the end surface of close V-type resonator is plated with is to 1064nm reflectivity
97% part reflecting medium film, another end surfaces are plated with the antireflective deielectric-coating to 1064nm.
Embodiment 11
A kind of xenon lamp profile pump silicon nanometer sheet passive Q-regulaitng laser, as shown in figure 9, including being placed successively along light path
4th front cavity mirror 20, the 4th pumping source 21, the 4th laser gain medium 22, the laser based on silicon nanometer sheet described in embodiment 2
Pulse-modulator 11, the 4th outgoing mirror 23.
Pump light is inputted from 22 side of the 4th laser gain medium, and produced laser passes through the laser pulse based on silicon nanometer sheet
Again through the 23 output Q-switched pulse of the 4th outgoing mirror after the modulation of modulator 11.
4th front cavity mirror 20, the 4th outgoing mirror 23 composition linear type resonator.
4th front cavity mirror 20 is plane mirror, is plated with close to the surface of one end of the 4th laser gain medium 22 to 1.05-1.1
The deielectric-coating of μm high reflection；
4th pumping source 21 is xenon lamp；
4th laser gain medium 22 is Nd:YAG crystal, Nd3+Ion concentration is 0.4at.%；
It is 60% that 4th outgoing mirror 23, which is plated with close to 22 end surface of the 4th laser gain medium to 1064nm reflectivity,
Deielectric-coating, the other end are plated with the antireflective deielectric-coating to 1064nm.
1064nm Q-switch lasers can be achieved by the modulation of silicon nanometer sheet pulse-modulator 12 to export.
Claims (10)
1. a kind of Laser pulse modulator device based on silicon nanometer sheet, which is characterized in that including substrate and deposition over the substrate
The silicon nanometer sheet material in face.
A kind of 2. Laser pulse modulator device based on silicon nanometer sheet according to claim 1, which is characterized in that the substrate
Thickness be 0.5-3mm；The thickness of the silicon nanometer sheet material is 1-50nm；
It is further preferred that the thickness of the silicon nanometer sheet material is 5-20nm；
Most preferably, the thickness of the substrate is 2mm；The thickness of the silicon nanometer sheet material is 5nm；
The substrate is crystal, glass or ceramic material；
It is further preferred that the substrate is quartz substrate or Sapphire Substrate；
The substrate back is plated with the deielectric-coating for being conducive to laser generation.
3. the preparation method of the Laser pulse modulator device described in claim 1 based on silicon nanometer sheet, which is characterized in that including：
(1) blocky silicon crystal grinding 10-40min of the 0.1-1g purity not less than 99.99% is taken, obtains silicon crystal powder；
(2) silicon crystal powder that step (1) obtains being mixed with ethyl alcohol, the mixed proportion of silicon crystal powder and ethyl alcohol is 1-2mg/ml,
After ultrasonic disperse 2 hours, 3 days are stood；
(3) supernatant liquor that step (2) is taken to obtain, is spin-coated on above substrate, in 25 DEG C of environment dry to get.
4. the preparation method of the Laser pulse modulator device according to claim 3 based on silicon nanometer sheet, which is characterized in that institute
It states step (3) and performs following steps later：The deielectric-coating for being conducive to laser generation is plated in substrate back.
5. a kind of all solid state laser based on silicon nanometer sheet pulse-modulator, which is characterized in that including being placed successively along light path
The first pumping source, the first front cavity mirror, first laser gain media, claim 1-3 it is any described based on silicon nanometer sheet
Laser pulse modulator device, the first outgoing mirror.
6. a kind of all solid state laser based on silicon nanometer sheet pulse-modulator according to claim 5, which is characterized in that
First front cavity mirror and first outgoing mirror composition resonator, first front cavity mirror are plated with to laser wavelength high reflection
Deielectric-coating, first outgoing mirror are plated with the deielectric-coating reflected laser wavelength part；
First pumping source is semiconductor laser diode or xenon lamp；
The first laser gain media is all solid dielectrics that can generate laser gain, in cylinder or cuboid,
End face polishes or is plated with the deielectric-coating for being conducive to Pumping light absorption and laser generation；
It is further preferred that the first laser gain media is laser crystal, laser glass or laser ceramics；
Most preferably, the first laser gain media is neodymium doped yttrium aluminum garnet crystal or neodymium doped yttrium vanadate crystal.
7. a kind of silicon nanometer sheet passive Q-regulaitng laser of end pumping, which is characterized in that including placed successively along light path second
Pumping source, the first fiber coupling system, the first focusing system, the second front cavity mirror, second laser gain media, claim 1-3
Any Laser pulse modulator device based on silicon nanometer sheet, the second outgoing mirror.
8. the silicon nanometer sheet passive Q-regulaitng laser of a kind of end pumping according to claim 7, which is characterized in that described
Second front cavity mirror forms resonator with second outgoing mirror, and the cavity length is 1-10cm；
It is further preferred that the cavity length is 1cm；
Second pumping source is the laser diode that launch wavelength is 808nm；
Second front cavity mirror is plane mirror, is plated with close to the surface of one end of first focusing system antireflective to 808nm
Deielectric-coating is plated with the deielectric-coating to 1.05-1.1 μm of high reflection close to the surface of the other end of the second laser gain media；
The second laser gain media is Nd:YAG crystal；
Second outgoing mirror is plano-concave mirror, and the concave surface of second outgoing mirror is plated with the medium to 1.05-1.1 μm of part reflection
Film, the plane of second outgoing mirror are plated with the antireflective deielectric-coating to 1.05-1.1 μm, the song of the concave surface of second outgoing mirror
Rate radius is 20-1000mm.
9. a kind of end pumping laser with active-passive lock mould, which is characterized in that including placed successively along light path third pumping source,
Two fiber coupling systems, the second focusing system, third front cavity mirror, third laser gain medium, plano-concave speculum, claim 1-
3 any Laser pulse modulator devices based on silicon nanometer sheet, third outgoing mirror；
The third front cavity mirror, the plano-concave speculum and the third outgoing mirror form V-type resonator；
The third pumping source is the laser diode of launch wavelength 808nm；
The third front cavity mirror is plane mirror, is plated with close to the surface of one end of second focusing system antireflective to 808nm
Deielectric-coating is plated with the deielectric-coating to 1.05-1.1 μm of high reflection close to the surface of one end of the third laser gain medium；
The third laser gain medium is Nd:YVO4Crystal；The incident end face of the third laser gain medium is coated with pair
808nm, 1.05-1.1 μm of antireflective deielectric-coating are plated with to 1.05-1.1 μm on the outgoing end face of the third laser gain medium
Antireflective deielectric-coating；
The concave surface of the plano-concave speculum is plated with the deielectric-coating to 1.05-1.1 μm of high reflection；
The third outgoing mirror is plane mirror, is plated with close to the surface of described V-type resonator one end to 1.05-1.1 μm of reflectivity
For 97% part reflecting medium film, another end surfaces are plated with the antireflective deielectric-coating to 1.05-1.1 μm.
10. a kind of profile pump passive Q-regulaitng laser, which is characterized in that including placed successively along light path the 4th front cavity mirror,
Any Laser pulse modulator device based on silicon nanometer sheet of four pumping sources, the 4th laser gain medium, claim 1-3,
4th outgoing mirror；
4th front cavity mirror, the 4th outgoing mirror composition linear type resonator；
4th front cavity mirror is plane mirror, is plated with close to the surface of one end of the 4th laser gain medium to 1.05-1.1
The deielectric-coating of μm high reflection；
4th pumping source is xenon lamp or has the function of the LD array modules of profile pump；
4th laser gain medium is Nd:YAG crystal；
4th outgoing mirror is plated with close to the end surface of the 4th laser gain medium
60% deielectric-coating, the other end are plated with the antireflective deielectric-coating to 1.05-1.1 μm.
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| Publication number | Priority date | Publication date | Assignee | Title |
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