CN102420385A - Passive Q-switched microchip laser device - Google Patents
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- CN102420385A CN102420385A CN2011103599270A CN201110359927A CN102420385A CN 102420385 A CN102420385 A CN 102420385A CN 2011103599270 A CN2011103599270 A CN 2011103599270A CN 201110359927 A CN201110359927 A CN 201110359927A CN 102420385 A CN102420385 A CN 102420385A
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Abstract
The invention discloses a passive Q-switched microchip laser device, belonging to the technical field of laser. The passive Q-switched microchip laser device mainly comprises a laser gain medium, a graphene or carbon nano tube saturable absorber, an optical element and an LD (Laser Device) pump unit. The graphene or carbon nano tube saturable absorber with nano level thickness is tightly adhered between the laser device gain medium and the optical element, a plane-plane cavity or a plane-concave cavity is formed by coating a film on the device, and the device is fully solidified to form a simple and compact sandwich structure by glue, optical cement or deepened optical cement. The graphene or carbon nano tube has the characteristics of wide range in saturable absorption wavelength and good thermal conductivity, so that the boardband pulse modulation in different wavelengths and good thermal radiating performance of the microchip laser device can be achieved. The passive Q-switched microchip laser device has the advantages of small optical size, easiness in maintenance due to full solidification and wide wavelength modulating range, capability of reducing technological difficulties and production cost of the pulse microchip laser device, and wide application prospect.
Description
Technical field
The present invention relates to field of lasers, relate in particular to microchip structure passive Q-regulaitng laser and novel saturable absorber material---Graphene, CNT.
Background technology
Full utmost point short cavity length of solidifying passive Q-adjusted micro-slice laser easy care simple and compact for structure, particularly its millimeter magnitude can realize single-frequency and the output of high-peak power pulse laser, and higher shg efficiency is arranged.These characteristics make passive Q-adjusted micro-slice laser obtain extensive use in fields such as scientific research, industrial processes, biomedicine, military detections.The passive Q-adjusted micro-slice laser of LD pumping at present can have been realized the pulse output of pulsewidth psec to nanosecond order, repetition KHz magnitude, peak power kilowatt magnitude.Passive Q-adjusted micro-slice laser uses Cr more
4+: crystal such as YAG also have the report of use semiconductor saturable absorbing mirror (SESAM) as saturable absorber.Even if the former adopts the Cr of bonding
4+: the YAG/Nd:YAG crystal, still have the long uppity problem of laser cavity, and the doping process of this crystalloid is strict, damage threshold is also undesirable.
As a kind of new material, Graphene and CNT have excellent electricity, optics and mechanical characteristic, have important potential using value in high-performance electronic device, sensor measuring, information stores, prepare composite.Graphene and CNT have considerable light amplitude limit effect to multiwavelength laser; Particularly the grapheme material of atomic level can be realized the saturable absorption from the visible light to the middle-infrared band, makes it in laser manufacturing and application facet unusual significance arranged.Raising and maturation along with Graphene, carbon nano-tube material large-scale production technology of preparing utilize it to make saturable absorber extremely are helped reducing pulse laser technology difficulty and production cost, are expected to substitute the passive modulation device of existing laser pulse.
Summary of the invention
The objective of the invention is to utilize nanometer scale thickness Graphene or carbon nano-tube material to make saturable absorber, the sandwich type of implementation structure compact solidifies the passive Q-adjusted of micro-slice laser and different wave length thereof entirely.
For realizing above-mentioned purpose, the present invention adopts following technical scheme:
Micro-slice laser comprises gain medium, Graphene or CNT saturable absorber, optical element and LD pump arrangement.The Graphene or the tight folder of CNT saturable absorber of nanometer scale thickness are affixed between gain medium and the optical element, constitute sandwich structure.Effect of Back-Cavity Mirror constituted parallel plane resonant cavity or flat-concave cavity before plated film was done on gain medium and optical element.Devices such as optical glass that above-mentioned optical element is temperature-compensating medium, frequency-doubling crystal, wave plate, pass through oscillation wavelength or crystal, the also combination of this type of device.Use methods such as gummed, optical cement or in-depth optical cement that each device is solidified entirely.Adopt LD or optical fiber coupling output type LD that above-mentioned sandwich structure micro-slice laser is carried out end pumping.Described Graphene or CNT saturable absorber contain one or more compositions in Graphene, graphene oxide, Graphene polymer, the CNT; Can be grown directly upon stromal surface; Can be prepared as pressed powder or form of film, also can be mixed with into the polymer thin form membrane with the PVC equal solvent.
A kind of passive Q-adjusted micro-slice laser comprises gain medium, Graphene or CNT saturable absorber, optical element or optical material and LD pump arrangement; It is characterized in that: to the anti-reflection blooming of pump light, perhaps to laser total reflection or partial reflection blooming, perhaps plate simultaneously and state anti-reflection blooming and anacamptics film in the plating of gain media pumping end surface; The optical element plating is to laser total reflection or partial reflection blooming; Effect of Back-Cavity Mirror constitutes average chamber or flat-concave cavity before utilizing the plated film of gain media and optical element to do, with the Graphene of thickness 0.5 nanometer to 5 nanometer, CNT saturable absorber closely folder be affixed between laser gain medium and the optical element and constitute sandwich structure.
Prepared graphene or carbon nano-tube material saturable absorption body thickness are 0.5 nanometer to 5 nanometer; 1 to 10 layer of the number of plies of grapheme material in the Graphene saturable absorber.
Gain medium is Nd:YAG crystal, Nd:YVO
4Crystal, Er:Yb:glass laser material.
Optical glass or quartz crystal device or material that optical element is temperature-compensating medium, frequency-doubling crystal, wave plate, pass through oscillation wavelength, and the combination of this type of device or material.
Use the method for gummed, optical cement or in-depth optical cement that the micro-slice laser device is cured as sandwich structure entirely.
Use the direct end pumping of LD, adopt optical fiber coupling output LD to carry out end pumping through optical system.
Described a kind of passive Q-adjusted micro-slice laser; It is characterized in that: comprise that successively LD pumping source 601, colimated light system 602, gain medium 301 are attached to centre, the sandwich structure of formation with optical element 402 with Graphene or CNT saturable absorber 201 tight folders; Gain medium 301 pumping end surface are coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element 402 of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity.
Optical fiber coupling output LD pumping source 601 provides pumping, and pump light focuses on gain medium 301 pumping end surface and coupling injection through colimated light system 602; Gain medium 301 and optical element 402 constitute sandwich structure in the middle of closely folder is attached to Graphene or CNT saturable absorber 201; Gain medium 301 pumping end surface are coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element 402 of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity; Graphene or CNT saturable absorber 201 are as the laser Q-switching device, and adjusting Q pulse laser is through optical element 402 outputs.
Described a kind of passive Q-adjusted micro-slice laser is characterized in that: comprise the LD pumping source successively, LD pumping source 601 is close to gain medium 301; Gain medium 301 is attached to centre, the sandwich structure of formation with optical element 402 with Graphene or CNT saturable absorber 201 tight folders; Gain medium 301 pumping end surface are coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element 402 of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity.
Described a kind of passive Q-adjusted micro-slice laser is characterized in that: comprise LD pumping source 601, colimated light system 602, partially reflecting mirror 603 successively; Gain medium 301 is attached to centre, the sandwich structure of formation with optical element 402 with Graphene or CNT saturable absorber 201 tight folders; The pumping end surface of gain medium 301 is coated with pump light anti-reflection simultaneously to the blooming of laser part reflection, itself and optical element 402 formation resonant cavitys to laser and pump light total reflection.
603 couplings inject gain medium 301 to LD pumping source 601 with partially reflecting mirror through colimated light system 602; Gain medium 301 and optical element 402 constitute sandwich structure in the middle of closely folder is attached to Graphene or CNT saturable absorber 201; The pumping end surface of gain medium 301 is coated with pump light anti-reflection simultaneously to the blooming of laser part reflection, itself and optical element 402 formation resonant cavitys to laser and pump light total reflection; Graphene or CNT saturable absorber 201 are as the laser Q-switching device, and adjusting Q pulse laser is exported through partially reflecting mirror 603 reflections from the gain media pumping end surface.
The present invention adopts above technical scheme; Since Graphene, CNT saturable absorption body thickness in nanometer scale, to influence resonant cavity hardly long, make the laserresonator chamber that utilizes plated film to constitute grow and only depend on optical element thickness in gain medium thickness and the chamber.And the method for using gummed, optical cement or in-depth optical cement is cured as the sandwich structure of compact entirely with the micro-slice laser device, can effectively reduce the laser optical volume, is convenient to safeguard.Especially, Graphene, carbon nano-tube material saturable absorption effect wavelength coverage are wide, and it is passive Q-adjusted to utilize it to carry out as saturable absorber, selects suitable gain medium (e.g Nd:YAG, Nd:YVO for use
4, Er:Yb:glass) can realize different wavelength of laser pulse output.Graphene, carbon nano-tube material have good thermal conductivity in addition, very help the heat conduction and the heat radiation of device in the chamber.Various optics of flexible Application and combination thereof simultaneously can further realize the characteristics such as frequency stabilization, frequency multiplication, polarization of micro-slice laser pulse laser.
Description of drawings
Fig. 1 is the structural representation of the first embodiment of the present invention
Fig. 2 is the structural representation of the second embodiment of the present invention
Fig. 3 is the structural representation of the third embodiment of the present invention
Fig. 4 is the structural representation of the fourth embodiment of the present invention
Embodiment
Combine accompanying drawing and embodiment that the present invention is further specified at present.
The present invention mainly comprises: gain medium, Graphene or CNT saturable absorber, optical element and pump arrangement.
The passive Q-adjusted neodymium-doped yttrium-aluminum garnet (Nd:YAG) that Graphene is made saturable absorber solidifies micro-slice laser entirely.As shown in Figure 2, affiliated structure devices is tactic LD pumping source 601, optical alignment coupled system 602, gain medium 301, Graphene saturable absorber 201, optical element 401.LD pumping source 601 is wavelength 808nm optical fiber coupling output LD in the present embodiment, gain medium 301 be Nd:YAG crystal, Graphene saturable absorber 201 be 1～10 layer of the Graphene number of plies the saturable absorption body thin film,, optical element 401 is the YAG crystal.Two look films of gain medium 301,1064nm total reflection anti-reflection wherein with optical element 401 plated films: S1 plating wavelength 808nm; S2 plating wavelength 808nm total reflection, 1064nm is anti-reflection two look films; S3 plating wavelength 1064nm partial reflection film, S4 plating wavelength 1064nm anti-reflection film.S1 and S3 constitute the parallel plane resonant cavity.Thickness nanometer scale and Graphene saturable absorber with thermal conductive resin closely folder are affixed in the laser cavity the long thickness that only depends on gain medium 301 in chamber.Above-mentioned gain medium 301, Graphene saturable absorber 201, optical element 401 tight pressings and optical cement are cured as compact sandwich structure, embed the heat sink natural cooling of copper.Above-mentioned optical cement has the high permeability of respective wavelength and low absorptivity, and good thermal conductivity, thermal endurance and adhesion strength are arranged.Wavelength 808nm pump light is coupled into gain medium 301 by S1, and the laser that excites vibrates in resonant cavity, through Graphene saturable absorber 201 modulation back in the be coupled pulse laser of output wavelength 1064nm of S3.
Embodiment 2
CNT is made the passive Q-adjusted Nd-doped yttrium vanadate crystal (Nd:YVO of saturable absorber
4) output of micro-slice laser realization frequency multiplication green light pulse.As shown in Figure 2, said structure devices is tactic LD pumping source 601, optical alignment coupled system 602, gain medium 301, CNT saturable absorber 201, optical element 401, optical element 402..LD pumping source 601 is wavelength 808nm optical fiber coupling output LD in the present embodiment, and gain medium 301 is Nd:YVO
4Crystal, CNT saturable absorber 201 are the PVC polymer film of CNT, and optical element 401 is the temperature-compensating medium, and optical element 402 is the KTP frequency-doubling crystal.The wherein thermal coefficient of expansion of temperature-compensating medium or photo-thermal coefficient and Nd:YVO
4Crystal is opposite.Two look films of gain medium 301,1064nm total reflection anti-reflection wherein with optical element 402 plated films: S1 plating wavelength 808nm; S2 plating wavelength 808nm total reflection, 1064nm is anti-reflection two look films; S3 plating wavelength 1064nm partial reflection, 532nm total reflection two look films, S4 plating wavelength 1064nm total reflection, 532nm is anti-reflection two look films.Thickness nanometer scale and the CNT saturable absorber that possesses thermal conductive resin closely folder are affixed between gain medium 301 and the optical element 401; Constitute average resonant cavity by S1 and S3, the long thickness that only depends on gain medium 301 and optical element 401 of laser cavity.S3 and S4 constitute frequency doubling cavity.Above-mentioned gain medium 301, CNT saturable absorber 201, optical element 401 and optical element 402 tight pressings and optical cement are cured as compact plural sandwich structure, embed the heat sink natural cooling of copper.Above-mentioned optical cement has the high permeability of respective wavelength and low absorptivity, and good thermal conductivity, thermal endurance and adhesion strength are arranged.Wavelength 808nm pump light is coupled into gain medium 301 by S1, and the laser that excites vibrates in resonant cavity, through CNT saturable absorber 201 modulation back in the be coupled pulse laser of output wavelength 1064nm of S3.Device deformation is revised by optical element 401 in the chamber that is caused by thermal effect therebetween, makes laser cavity length to temperature-insensitive, and then obtains the frequency stabilization effect.After this, frequency multiplication is provided, realizes the pulse laser output of wavelength 532nm at S4 by optical element 402.
Embodiment 3
Graphene is made saturable absorber and is realized that passive Q-adjusted Er:Yb:glass solidifies micro-slice laser entirely.As shown in Figure 3, said structure devices is tactic LD pumping source 601, gain medium 301, Graphene saturable absorber 201, optical element 401.LD pumping source 601 is the LD of wavelength 980nm in the present embodiment, and gain medium 301 is Er:Yb:glass material, the single-layer graphene of Graphene saturable absorber 201 on optical element 401, growing, and optical element 401 is the 6H-SiC crystal.Wherein the pumping end surface of gain medium 301 is coated with that wavelength 980nm is anti-reflection, 1550nm total reflection two look films.Because the own refractive index of 6H-SiC crystal higher (n=2.6), so the optical element reflectivity is 20%, the pumping end surface of itself and gain medium 301 constitutes the parallel plane resonant cavity jointly.Graphene is grown directly upon optical element 401 inner cavity surfaces and makes saturable absorber.LD pumping source 601 is close to the pumping end surface of gain medium 301 and is carried out direct end pumping.Tight pressing of above-mentioned device and optical cement are cured as compact sandwich structure, embed the heat sink natural cooling of copper.Above-mentioned optical cement has the high permeability of respective wavelength and low absorptivity, and good thermal conductivity, thermal endurance and adhesion strength are arranged.The 980nm exciting light is coupled into through gain medium 301 pumping end surface, and the laser of generation vibrates in average chamber, through Graphene saturable absorber 201 modulation back by the be coupled pulse laser of output wavelength 1550nm of optical element 401.
Embodiment 4
Graphene is made saturable absorber and is realized that passive Q-adjusted YLF matrix epitaxial growth LiYErTmHoF crystal solidifies micro-slice laser entirely.As shown in Figure 1, said structure devices is tactic pumping source 601, optical alignment coupled system 602, partially reflecting mirror 603, gain medium 301, Graphene saturable absorber 201, optical element 401.Pumping source 601 is a wavelength 647nm Kr laser in the present embodiment, and gain medium 301 is a YLF matrix epitaxial growth LiYErTmHoF crystal, and Graphene saturable absorber 201 is the graphene oxide powder, and optical element 401 is the gold-plated mirror of copper base.Wherein gain medium 301 pumping end surface are plated anti-reflection, the 2um partial reflection two look films of wavelength 647nm.Anti-reflection, the 2um total reflection two look films of partially reflecting mirror 603 plating wavelength 647nm.401 pairs of pump lights of optical element, laser total reflection, itself and gain medium 301 pumping end surface constitute average resonant cavity.Graphene saturable absorber 201 is closely pressed from both sides with optical element 401 by gain medium 301 and is affixed in the chamber.Utilize thermal conductive resin that grapheme material possesses, the heat that gain medium 301 produces can pass to optical element 401 rapidly and then obtain cooling.Use in-depth optical cement method optical element 401, Graphene saturable absorber 201 and gain medium 301 to be cured as the sandwich structure of compact.Above-mentioned optical cement has the high permeability of respective wavelength and low absorptivity, and good thermal conductivity, thermal endurance and adhesion strength are arranged.Wavelength 647nm pump light permeation parts speculum 603 is coupled into gain medium 301; The laser that produces vibrates in the chamber and is modulated by Graphene saturable absorber 201; The final coupling through gain medium 301 pumping end surface exported, and reflects the pulse laser of output wavelength 2um again through partially reflecting mirror 603.
Special declaration in the spirit and scope of the present invention that do not break away from appended patent claim and limited, is protection scope of the present invention to any variation that the present invention did in form and details.
Claims (9)
1. a passive Q-adjusted micro-slice laser comprises gain medium, Graphene or CNT saturable absorber, optical element or optical material and LD pump arrangement; It is characterized in that: to the anti-reflection blooming of pump light, perhaps to laser total reflection or partial reflection blooming, perhaps plate simultaneously and state anti-reflection blooming and anacamptics film in the plating of gain media pumping end surface; The optical element plating is to laser total reflection or partial reflection blooming; Effect of Back-Cavity Mirror constitutes average chamber or flat-concave cavity before utilizing the plated film of gain media and optical element to do, with the Graphene of thickness 0.5 nanometer to 5 nanometer, CNT saturable absorber closely folder be affixed between laser gain medium and the optical element and constitute sandwich structure.
2. a kind of passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: prepared graphene or carbon nano-tube material saturable absorption body thickness are 0.5 nanometer to 5 nanometer; 1 to 10 layer of the number of plies of grapheme material in the Graphene saturable absorber.
3. a kind of passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: gain medium is Nd:YAG crystal, Nd:YVO
4Crystal, Er:Yb:glass laser material.
4. a kind of passive Q-adjusted micro-slice laser according to claim 1; It is characterized in that: optical glass or quartz crystal device or material that optical element is temperature-compensating medium, frequency-doubling crystal, wave plate, pass through oscillation wavelength, and the combination of this type of device or material.
5. a kind of passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: use the method for gummed, optical cement or in-depth optical cement that the micro-slice laser device is cured as sandwich structure entirely.
6. a kind of passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: use the direct end pumping of LD, adopt optical fiber coupling output LD to carry out end pumping through optical system.
7. a kind of passive Q-adjusted micro-slice laser according to claim 1; It is characterized in that: comprise that successively LD pumping source (601), colimated light system (602), gain medium (301) are attached to centre, the sandwich structure of formation with optical element (402) with Graphene or the tight folder of CNT saturable absorber (201); Gain medium (301) pumping end surface is coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element (402) of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity;
Optical fiber coupling output LD pumping source (601) provides pumping, and pump light focuses on gain medium (301) pumping end surface and coupling injection through colimated light system (602); Gain medium (301) and optical element (402) constitute sandwich structure in the middle of closely folder is attached to Graphene or CNT saturable absorber (201); Gain medium (301) pumping end surface is coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element (402) of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity; Graphene or CNT saturable absorber (201) are as the laser Q-switching device, and adjusting Q pulse laser is through optical element (402) output.
8. a kind of passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: comprise the LD pumping source successively, LD pumping source (601) is close to gain medium (301); Gain medium (301) is attached to centre, the sandwich structure of formation with optical element (402) with Graphene or the tight folder of CNT saturable absorber (201); Gain medium (301) pumping end surface is coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element (402) of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity;
LD pumping source (601) is close to gain medium (301) and is carried out end pumping; Gain medium (301) and optical element (402) constitute sandwich structure in the middle of closely folder is attached to Graphene or CNT saturable absorber (201); Gain medium (301) pumping end surface is coated with anti-reflection and to the blooming of laser total reflection to pump light, its be coated with the optical element (402) of laser part anacamptics film done before Effect of Back-Cavity Mirror constitute parallel plane resonant cavity or flat-concave cavity; Graphene or CNT saturable absorber (201) are as the laser Q-switching device, and adjusting Q pulse laser is through optical element (402) output.
9. a kind of passive Q-adjusted micro-slice laser according to claim 1 is characterized in that: comprise LD pumping source (601), colimated light system (602), partially reflecting mirror (603) successively; Gain medium (301) is attached to centre, the sandwich structure of formation with optical element (402) with Graphene or the tight folder of CNT saturable absorber (201); The pumping end surface of gain medium (301) is coated with pump light anti-reflection simultaneously to the blooming of laser part reflection, itself and optical element (402) formation resonant cavity to laser and pump light total reflection;
LD pumping source (601) injects gain medium (301) through colimated light system (602) and partially reflecting mirror (603) coupling; Gain medium (301) and optical element (402) constitute sandwich structure in the middle of closely folder is attached to Graphene or CNT saturable absorber (201); The pumping end surface of gain medium (301) is coated with pump light anti-reflection simultaneously to the blooming of laser part reflection, itself and optical element (402) formation resonant cavity to laser and pump light total reflection; Graphene or CNT saturable absorber (201) are as the laser Q-switching device, and adjusting Q pulse laser is exported through partially reflecting mirror (603) reflection from the gain media pumping end surface.
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| CN103500921A (en) * | 2013-10-22 | 2014-01-08 | 山东大学 | Low-repetition frequency and high-stability subnanosecond pulsed green laser generator |
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| CN104242046A (en) * | 2014-10-22 | 2014-12-24 | 青岛大学 | Graphene-based mode-locked laser device |
| CN104319613A (en) * | 2014-10-29 | 2015-01-28 | 中国科学院半导体研究所 | Bonding mode-locked laser with graphene as saturable absorber |
| CN105140771A (en) * | 2015-07-16 | 2015-12-09 | 山东大学 | Passive Q-switched Nd:YAG human eye safe laser based on graphene |
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| CN105610041A (en) * | 2016-01-22 | 2016-05-25 | 四川大学 | Microchip laser system with low time jitter and picosecond pulse output |
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| CN112397975A (en) * | 2019-08-16 | 2021-02-23 | 山东华光光电子股份有限公司 | QBH aging heat dissipation device of laser system and working method |
| CN112397975B (en) * | 2019-08-16 | 2022-02-08 | 山东华光光电子股份有限公司 | QBH aging heat dissipation device of laser system and working method |
| CN112234421A (en) * | 2020-09-30 | 2021-01-15 | 山东科技大学 | Single-chiral single-walled carbon nanotube saturated absorption red light pulse solid laser and working method |
| CN112234421B (en) * | 2020-09-30 | 2021-12-28 | 山东科技大学 | Single-chiral single-walled carbon nanotube saturated absorption red light pulse solid laser and working method |
| CN113285336A (en) * | 2021-03-29 | 2021-08-20 | 北京镭测科技有限公司 | Double-solid-state microchip laser |
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Application publication date: 20120418 |