CN101304150A - Structure of micro-slice type electro-optical Q-switching laser - Google Patents
Structure of micro-slice type electro-optical Q-switching laser Download PDFInfo
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- CN101304150A CN101304150A CNA2008100713198A CN200810071319A CN101304150A CN 101304150 A CN101304150 A CN 101304150A CN A2008100713198 A CNA2008100713198 A CN A2008100713198A CN 200810071319 A CN200810071319 A CN 200810071319A CN 101304150 A CN101304150 A CN 101304150A
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Abstract
The invention discloses a structure of a microchip type electrooptic Q regulating laser, which comprises a semiconductor laser, an optical coupling system and a microchip laser. The microchip laser comprises a laser gain medium, a polarization polarizer, an electrooptic Q regulating crystal or transparent ceramics. An anterior cavity membrane and a posterior cavity membrane are respectively plated on the laser incident surface and laser exit facet of the microchip laser, wherein, each optical element of the microchip laser is bonded into a whole body by optical cement or deepening optical cement. The structure of the microchip type electrooptic Q regulating laser has the advantages of compact and stable structure, being easy for large scale production, producing products of small volume and low cost, thus leading to the possibility of the large scale application of the electrooptic Q regulating laser.
Description
Technical field
The present invention relates to field of lasers, relate in particular to the structure of micro-slice type electro-optical Q-switching laser.
The patented technology Q-regulating technique is an important way that obtains narrow pulsewidth, high-peak power laser pulse.Electric-optically Q-switched have switching time short (about 10
-9S), the efficient height transfers Q constantly can accurately control, and output pulse width is narrow, and (5～20ns), peak power height advantages such as (more than tens megawatts) is to use more a kind of Q-regulating technique at present.Electric-optically Q-switched crystal is widely applied in the Q-switched laser as Q-switch, but electro-optical Q-switching laser is generally made in the separation member mode at present, and its volume is big, cost is high, poor stability, is difficult for realizing large-scale production.
Summary of the invention
It is little that the object of the invention provides a kind of volume, and cost is low and be easy to the micro-slice type electro-optical Q-switching laser structure of large-scale production.
For realizing above purpose, the present invention is by the following technical solutions: photoelectricity Q-switched laser structure comprises semiconductor laser, optical coupling system and micro-slice laser, micro-slice laser comprises gain medium, the polarization polarizer, electric-optically Q-switched crystal or transparent ceramic, the laser entrance face of micro-slice laser and exit facet are coated with ante-chamber film and back cavity film respectively, and wherein each optical element is in aggregates by optical cement or in-depth optical cement bonding in the micro-slice laser.
The laser-emitting face of above-mentioned micro-slice laser can be provided with condenser lens.
It is Nd:YVO that above-mentioned gain medium adopts material
4, Nd:GdVO
4, Nd:YAG, Nd:LuVO
4, Nd ion laser gain media such as Nd:KGW.
The above-mentioned polarization polarizer adopts PBS prism, Walk-off crystal, the birefringent wedge gusset plate polarization polarizer.
Also be provided with Raman crystal in the above-mentioned micro-slice laser, it is arranged on polarization polarizer front end.
Above-mentioned Raman crystal material is YVO
4, GdVO
4, LuVO
4, KGW.
Above-mentioned gain medium and Raman crystal can unite two into one, its material such as Nd:YVO
4, Nd:GdVO
4
Also be provided with frequency-doubling crystal or parametric oscillation crystal in the above-mentioned micro-slice laser, it is arranged on polarization polarizer front end.
Also be provided with the OPO crystal in the above-mentioned micro-slice laser, it is arranged on polarization polarizer front end.
The present invention adopts above technical scheme, and each optical element is in aggregates by optical cement or in-depth optical cement bonding in the micro-slice laser, and its compact conformation is stable, be easy to large-scale production, the small product size of making is little, and cost is low, thereby makes electro-optical Q-switching laser might obtain large-scale application.
Description of drawings
Now in conjunction with the accompanying drawings the present invention is further elaborated:
Fig. 1 is the structural representation of photoelectricity Q-switched laser of the present invention;
Fig. 2 is the structural representation that micro-slice laser of the present invention is provided with condenser lens;
Fig. 3 is the polarization schematic diagram that the polarization polarizer of the present invention is the PBS prism;
Fig. 4 is the polarization schematic diagram that the polarization polarizer of the present invention is the Walk-off crystal;
Fig. 5 is that the polarization polarizer of the present invention is the polarization schematic diagram of the birefringent wedge gusset plate polarization polarizer;
Fig. 6 is the structural representation of other optical element of micro-slice laser band of the present invention.
Embodiment
See also shown in Fig. 1 or 2, the present invention includes semiconductor laser 1, optical coupling system 2 and micro-slice laser 3, micro-slice laser 3 comprises gain medium 31, the polarization polarizer 32, electric-optically Q-switched crystal or transparent ceramic 33.Gain medium 31 can adopt material such as Nd:YVO
4, Nd:GdVO
4, Nd:YAG, Nd:LuVO
4, Nd ion laser gain media such as Nd:KGW; Shown in Fig. 3,4 or 5, the polarization polarizer 32 can adopt PBS prism, Walk-off crystal, the birefringent wedge gusset plate polarization polarizer; The laser entrance face of micro-slice laser 3 and exit facet are coated with ante-chamber film S1 and back cavity film S2 respectively, and the laser-emitting face of micro-slice laser 3 can be provided with condenser lens 34, and wherein each optical element is in aggregates by optical cement or in-depth optical cement bonding in the micro-slice laser 3.
The operation principle of said structure is: the pump light λ of semiconductor laser 1, optical coupling system 2 pumpings
0 Enter gain medium 31, the generation wavelength is λ
1Oscillation light, λ
1By the polarization polarizer 32, become along the linearly polarized light of χ direction, if making alive not on electric-optically Q-switched crystal or the transparent ceramic 33, light will pass through crystal along axis direction, its polarization state does not change, after the total reflection emission, once more by electric-optically Q-switched crystal or the transparent ceramic 33 and the polarization polarizer 32, at this moment, electric-optically Q-switched crystal or transparent ceramic 33 are in " opening " state.If on electric-optically Q-switched crystal or transparent ceramic 33, apply a voltage, because longitudinal electro-optic effect will make plane of polarization with respect to the incident light half-twist, polarised light can not pass through the polarization polarizer 32 again, electric-optically Q-switched crystal or transparent ceramic 33 are in " closing " state, and laser cavity can not starting of oscillation.Like this, just can make laser be in accent Q state, realize its accent Q function by pressurizeing or moving back the pressure mode.
See also shown in Figure 6ly again, be provided with other optical element 35 in micro-slice laser 3, other optical element is arranged on the front end of the polarization polarizer 32 usually, to realize the different photoelectricity Q-switched laser of various functions.As other optical element 35 is Raman crystal, adopts material such as YVO
4, GdVO
4, LuVO
4, KGW etc., utilize the Raman frequency shift effect of Raman crystal, in the time of near fundamental wave is 1.34 μ m, can realize the output of 1.5 μ m laser pulses.Here gain medium 31 is the laser crystal material of Raman medium simultaneously, its material such as Nd:YVO
4, Nd:GdVO
4Deng, can realize equally.When other optical element 35 is frequency-doubling crystal or parametric oscillation crystal, or frequency-doubling crystal is the material of electrooptic crystal simultaneously, as KTP, and ante-chamber film S
1To the pump light wavelength X
0Anti-reflection, to the gain medium oscillation wavelength lambda
1High anti-, plated film S before the parametric oscillation crystal
3, it is to the gain medium oscillation wavelength lambda
1Anti-reflection, to the parametric oscillation wavelength X
2, λ
3High anti-, back cavity film S
2, to first-harmonic λ
1High anti-, to parametric oscillation light λ
2, λ
3The part transmission.So can realize the output of q-multiplier light.Other optical element 35 can also be the OPO crystal, produces to transfer the output of Q OPO laser.
In sum, the present invention adopts the microchip structure, the laser volume is reduced greatly, because microplate thickness can be ultra-thin states such as 1mm～2mm, increase greatly with logical optical thickness (making alive direction) ratio at photoelectricity adjusting Q crystal or transparent ceramic 33 logical light length directions, thereby greatly reduce the accent Q voltage of electric-optically Q-switched crystal or transparent ceramic 33, make and transfer Q power supply making volume to reduce, manufacture difficulty reduces, thus the miniaturization of easier realization product.
Claims (9)
1, the structure of micro-slice type electro-optical Q-switching laser, comprise semiconductor laser, optical coupling system and micro-slice laser, micro-slice laser comprises gain medium, the polarization polarizer, electric-optically Q-switched crystal or transparent ceramic, the laser entrance face of micro-slice laser and exit facet are coated with ante-chamber film and back cavity film respectively, it is characterized in that: each optical element is in aggregates by optical cement or in-depth optical cement bonding in the micro-slice laser.
2, the structure of micro-slice type electro-optical Q-switching laser according to claim 1 is characterized in that: the laser-emitting face of its micro-slice laser can be provided with condenser lens.
3, the structure of micro-slice type electro-optical Q-switching laser according to claim 1 and 2 is characterized in that: it is Nd:YVO that its gain medium adopts material
4, Nd:GdVO
4, Nd:YAG, Nd:LuVO
4, Nd ion laser gain media such as Nd:KGW.
4, the structure of micro-slice type electro-optical Q-switching laser according to claim 1 and 2 is characterized in that: its polarization polarizer adopts PBS prism, Walk-off crystal, the birefringent wedge gusset plate polarization polarizer.
5, the structure of micro-slice type electro-optical Q-switching laser according to claim 1 and 2 is characterized in that: also be provided with Raman crystal in its micro-slice laser, it is arranged on polarization polarizer front end.
6, the structure of micro-slice type electro-optical Q-switching laser according to claim 5 is characterized in that: its Raman crystal material is YVO
4, GdVO
4, LuVO
4, KGW.
7, the structure of micro-slice type electro-optical Q-switching laser according to claim 5 is characterized in that: its gain medium is the laser crystal material of Raman medium, its material such as Nd:YVO simultaneously
4, Nd:GdVO
4
8, the structure of micro-slice type electro-optical Q-switching laser according to claim 1 and 2, it is characterized in that: also be provided with other optical element such as frequency-doubling crystal or parametric oscillation crystal in its micro-slice laser, or frequency-doubling crystal is the material of parametric oscillation crystal simultaneously, as KTP, it is arranged on polarization polarizer front end.
9, the structure of micro-slice type electro-optical Q-switching laser according to claim 1 and 2 is characterized in that: also be provided with the OPO crystal in its micro-slice laser, it is arranged on polarization polarizer front end.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008100713198A CN101304150A (en) | 2008-07-02 | 2008-07-02 | Structure of micro-slice type electro-optical Q-switching laser |
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|---|---|---|---|
| CNA2008100713198A CN101304150A (en) | 2008-07-02 | 2008-07-02 | Structure of micro-slice type electro-optical Q-switching laser |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074885A (en) * | 2010-12-29 | 2011-05-25 | 福州高意通讯有限公司 | Polarizer in laser cavity and laser cavity structure |
| CN102420385A (en) * | 2011-11-14 | 2012-04-18 | 北京工业大学 | Passive Q-switched microchip laser device |
| CN102487177A (en) * | 2010-12-31 | 2012-06-06 | 北京国科世纪激光技术有限公司 | Electro-optical crystal, laser resonant cavity and laser |
| CN106848832A (en) * | 2017-04-24 | 2017-06-13 | 西南石油大学 | The single bar bar end pumping pulse laser of one kind miniaturization |
| CN111900606A (en) * | 2020-07-24 | 2020-11-06 | 山东省科学院激光研究所 | High-power high-energy yellow Raman laser system |
-
2008
- 2008-07-02 CN CNA2008100713198A patent/CN101304150A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074885A (en) * | 2010-12-29 | 2011-05-25 | 福州高意通讯有限公司 | Polarizer in laser cavity and laser cavity structure |
| CN102487177A (en) * | 2010-12-31 | 2012-06-06 | 北京国科世纪激光技术有限公司 | Electro-optical crystal, laser resonant cavity and laser |
| CN102420385A (en) * | 2011-11-14 | 2012-04-18 | 北京工业大学 | Passive Q-switched microchip laser device |
| CN106848832A (en) * | 2017-04-24 | 2017-06-13 | 西南石油大学 | The single bar bar end pumping pulse laser of one kind miniaturization |
| CN111900606A (en) * | 2020-07-24 | 2020-11-06 | 山东省科学院激光研究所 | High-power high-energy yellow Raman laser system |
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Application publication date: 20081112 |