CN111900606A - High-power high-energy yellow Raman laser system - Google Patents

High-power high-energy yellow Raman laser system Download PDF

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Publication number
CN111900606A
CN111900606A CN202010728285.6A CN202010728285A CN111900606A CN 111900606 A CN111900606 A CN 111900606A CN 202010728285 A CN202010728285 A CN 202010728285A CN 111900606 A CN111900606 A CN 111900606A
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light
reflection mirror
fundamental frequency
pump
stokes
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Inventor
姜鹏波
倪家升
祁海峰
张海伟
王伟涛
宋志强
郭健
王昌
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Tianjin University of Technology
Laser Institute of Shandong Academy of Science
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Tianjin University of Technology
Laser Institute of Shandong Academy of Science
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Priority to CN202010728285.6A priority Critical patent/CN111900606A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/094042—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser
    • H01S3/094046—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a fibre laser of a Raman fibre laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/117—Q-switching using intracavity acousto-optic devices

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The application discloses big energy yellow light raman laser system of high power includes: the laser gain control system comprises a pump laser source, a laser coupling subsystem, a resonant cavity, a laser gain medium, an acousto-optic Q switch and a nonlinear frequency doubling crystal, wherein the pump laser source, the laser coupling subsystem, the resonant cavity, the laser gain medium, the acousto-optic Q switch and the nonlinear frequency doubling crystal are sequentially arranged; the laser coupling subsystem comprises a first coupling lens and a second coupling lens, and the first coupling lens is positioned between the pump laser source and the second coupling lens; the resonant cavity comprises a first fundamental frequency light-Stokes light high-reflection mirror and a second fundamental frequency light-Stokes light high-reflection mirror, and the first fundamental frequency light-Stokes light high-reflection mirror is positioned between the second coupling lens and the second fundamental frequency light-Stokes light high-reflection mirror; the laser gain medium comprises a first Nd: YAG crystal and Nd: YVO4And (4) crystals. The problems that the conventional yellow Raman laser cannot efficiently operate at high and low repetition frequencies at the same time, cannot output yellow light at high power and high energy at the same time and the like are solved.

Description

High-power high-energy yellow Raman laser system
Technical Field
The application relates to the technical field of lasers, in particular to a high-power high-energy yellow-light Raman laser system.
Background
The yellow laser with the wavelength within the range of 550-620nm has important even irreplaceable effects in the fields of stimulated emission depletion fluorescence microscopy, laser sodium guide star, isotope separation and the like. However, the conventional method for preparing the yellow-band laser generally has a complex system structure and high cost, is not suitable for mass production, and has a small application range. Therefore, a new way to generate yellow band laser is needed. A yellow raman laser based on stimulated raman scattering is a new way of preparing yellow band laser light that has emerged in recent years. The laser has the advantages of simple and compact structure, high efficiency and good beam quality.
However, the current yellow raman laser cannot operate efficiently at both high and low repetition frequencies, and thus cannot simultaneously achieve high power and high energy yellow output to meet the requirements of different applications. YVO based on Nd, for example4The crystal self-Raman laser can only run efficiently at high repetition frequency, which is beneficial to realizing high-power output, but the single pulse energy is often only dozens of microjoules due to high repetition frequency; in areas where high monopulse energy is required, e.g. isotope separationDye laser pumping sources, laser resistance trimming and the like, the laser cannot meet the requirement of large energy. Or, part of the common yellow raman laser can only work under a lower repetition frequency, and the high-power yellow output cannot be obtained.
Disclosure of Invention
The application provides a high-power high-energy yellow light Raman laser system to solve the problem that the existing yellow light Raman laser cannot efficiently operate at high and low repetition frequencies at the same time, so that the output of high-power and high-energy yellow light cannot be realized at the same time to meet the requirements of different applications.
A high power high energy yellow raman laser system comprising:
a pump laser source;
the laser coupling subsystem is positioned on the light-emitting side of the pump laser source; the laser coupling subsystem comprises a first coupling lens and a second coupling lens which are arranged in parallel, and the first coupling lens is positioned between the pump laser source and the second coupling lens;
the resonant cavity is positioned on one side, far away from the pump laser source, of the second coupling lens; the resonant cavity comprises a first fundamental frequency light-Stokes light high-reflection mirror and a second fundamental frequency light-Stokes light high-reflection mirror, and the first fundamental frequency light-Stokes light high-reflection mirror is positioned between the second coupling lens and the second fundamental frequency light-Stokes light high-reflection mirror;
a laser gain medium located between the first fundamental frequency light-stokes light high-reflection mirror and the second fundamental frequency light-stokes light high-reflection mirror; the laser gain medium comprises a first Nd: YAG crystal and Nd: YVO4A first Nd: YAG crystal located between the first fundamental frequency light-Stokes light high reflection mirror and the Nd: YVO4Between crystals;
an acousto-optic Q-switch located between the laser gain medium and the second fundamental frequency light-Stokes light high-reflection mirror;
the nonlinear frequency doubling crystal is positioned between the acousto-optic Q switch and the second fundamental frequency light-Stokes light high-reflection mirror;
the surfaces of two sides of the first fundamental frequency light-Stokes light high-reflection mirror and the second fundamental frequency light-Stokes light high-reflection mirror are respectively provided with a first antireflection film and a high-reflection film; the light which is anti-reflection by the first antireflection film is pump laser, and the light which is highly reflected by the high-reflection film is intracavity oscillation fundamental frequency light and first-order Stokes light.
According to the technical scheme, the high-power high-energy yellow Raman laser system comprises: a pump laser source; the laser coupling subsystem is positioned on the light-emitting side of the pump laser source; the laser coupling subsystem comprises a first coupling lens and a second coupling lens which are arranged in parallel, and the first coupling lens is positioned between the pump laser source and the second coupling lens; the resonant cavity is positioned on one side, far away from the pump laser source, of the second coupling lens; the resonant cavity comprises a first fundamental frequency light-Stokes light high-reflection mirror and a second fundamental frequency light-Stokes light high-reflection mirror, and the first fundamental frequency light-Stokes light high-reflection mirror is positioned between the second coupling lens and the second fundamental frequency light-Stokes light high-reflection mirror; a laser gain medium located between the first fundamental frequency light-stokes light high-reflection mirror and the second fundamental frequency light-stokes light high-reflection mirror; the laser gain medium comprises a first Nd: YAG crystal and Nd: YVO4A first Nd: YAG crystal located between the first fundamental frequency light-Stokes light high reflection mirror and the Nd: YVO4Between crystals; an acousto-optic Q-switch located between the laser gain medium and the second fundamental frequency light-Stokes light high-reflection mirror; the nonlinear frequency doubling crystal is positioned between the acousto-optic Q switch and the second fundamental frequency light-Stokes light high-reflection mirror; the surfaces of two sides of the first fundamental frequency light-Stokes light high-reflection mirror and the second fundamental frequency light-Stokes light high-reflection mirror are respectively provided with a first antireflection film and a high-reflection film; the light which is anti-reflection by the first antireflection film is pump laser, and the light which is highly reflected by the high-reflection film is intracavity oscillation fundamental frequency light and first-order Stokes light.
According to the high-power high-energy yellow Raman laser system, Nd: YAG crystal and Nd: YVO are selected4The crystal is used as a gain medium to provide gain for fundamental frequency light, and the Nd-YAG crystal has longer lengthThe characteristic of upper energy level service life can realize that the laser can be operated efficiently under low repetition frequency, and realize the output of large monopulse energy. Using Nd: YVO4The crystal has the characteristics of large stimulated emission section, birefringence characteristic and relatively short upper energy level service life, and can realize the operation of polarization, high repetition frequency and high power of laser. Integrates the advantages of two crystals, can realize the high-efficiency operation of fundamental frequency light under high and low repetition frequencies, and then passes through the intracavity Nd, YVO4The Raman frequency shift of the crystal shifts the frequency of the fundamental frequency to a first-order Stokes light wave band, and finally the yellow Raman laser system which can efficiently run under high and low repetition frequencies is realized through the frequency doubling of the intracavity nonlinear frequency doubling crystal, so that the purpose that one laser system can simultaneously improve the high-power and high-energy yellow light output is achieved. In addition, the resonant cavity adopts a double-crystal structure, and utilizes the excellent mechanical properties of Nd: YAG crystal, in which YVO is Nd: YVO4The front of the crystal bears most of pumping power, so that the upper limit of the pumping power limited by mechanical performance can be improved; YVO can effectively relieve Nd by adopting a double-crystal structure4The thermal effect in the crystal ensures that the Raman gain is not greatly reduced due to the influence of the thermal effect, thereby being capable of improving the upper limit of the pumping power limited by the thermal effect. The improvement of the upper limit of the pumping power is beneficial to realizing the output of the yellow laser with high power and large energy.
Drawings
In order to more clearly explain the technical solution of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious to those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a first high-power high-energy yellow raman laser system according to an embodiment of the present disclosure;
fig. 2 is a schematic structural diagram of a second high-power high-energy yellow raman laser system according to an embodiment of the present disclosure;
fig. 3 is a schematic structural diagram of a third high-power high-energy yellow raman laser system according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a fourth high-power high-energy yellow raman laser system according to an embodiment of the present disclosure.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Fig. 1 is a schematic structural diagram of a first high-power high-energy yellow raman laser system according to an embodiment of the present disclosure. As shown in fig. 1, the high-power high-energy yellow raman laser system provided in the embodiment of the present application includes: the wavelength of the emergent light of the pump laser source 1 can be about 808nm, and is not particularly limited; the laser coupling subsystem 2 is positioned on the light-emitting side of the pump laser source 1; the laser coupling subsystem 2 may comprise a first coupling lens 21 and a second coupling lens 22 arranged in parallel, wherein the first coupling lens 21 is located between the pump laser source 1 and the second coupling lens 22. The energy transfer fiber 06 is arranged between the pump laser source 1 and the first coupling lens 21 to lead out the emergent light of the pump laser source 1; the laser coupling subsystem 2 composed of the first coupling lens 21 and the second coupling lens 22 can collimate and focus the light emitted from the pump laser source 1. The resonant cavity 3 is positioned on one side of the second coupling lens 22 far away from the pump laser source 1; the resonant cavity 3 may include a first fundamental frequency light-stokes light high-reflection mirror 31 and a second fundamental frequency light-stokes light high-reflection mirror 32, wherein the first fundamental frequency light-stokes light high-reflection mirror 31 is located between the second coupling lens 22 and the second fundamental frequency light-stokes light high-reflection mirror 32. The surfaces of the two sides of the first fundamental frequency light-stokes light high-reflection mirror 31 and the second fundamental frequency light-stokes light high-reflection mirror 32 can be respectively provided with a first antireflection film T1 and a high-reflection film R; light which is anti-reflected by the first anti-reflection film T1 is pump laser, and light which is high-reflected by the high-reflection film R is intracavity oscillation fundamental frequency light and first-order Stokes light. The laser gain medium 4 is positioned in the first fundamental frequency lightBetween the stokes light high-reflection mirror 31 and the second fundamental frequency light-stokes light high-reflection mirror 32; the laser gain medium 4 may include a first Nd: YAG crystal 41 and Nd: YVO4 A crystal 42, a first Nd: YAG crystal 41 is arranged on the first fundamental frequency light-Stokes light high reflection mirror 31 and the Nd: YVO4Between the crystals 42; first Nd: YAG crystal 41 and Nd: YVO4The crystal 42 is used as a gain medium to provide gain for fundamental frequency light, and the pump laser source 1 is used for pumping and exciting the laser gain medium 4; in practical application, the first Nd is YAG crystal 41 and the first Nd is YVO4The crystal 42 should be placed in close proximity, and for clarity of illustration in the drawings, the first Nd: YAG crystal 41 and Nd: YVO crystal are shown4Crystal 42 is shown as resolved. The acousto-optic Q-switch 5 is located between the laser gain medium 4 and the second fundamental frequency light-stokes light high reflection mirror 32. The nonlinear frequency doubling crystal 6 is positioned between the acousto-optic Q switch 5 and the second fundamental frequency light-Stokes light high-reflection mirror 32; the nonlinear frequency doubling crystal 6 can be obtained by LBO frequency doubling crystal and cutting according to a noncritical phase matching angle. YVO is Nd if the emergent light of the pump laser source 1 can be polarized light4The optical axis direction Y of the crystal 42 may be the same as the polarization direction S of the polarized light emitted from the pump laser light source 1. Therefore, the high-power high-energy yellow Raman laser system provided by the application can be ensured to emit polarized light. The polarized light emitted from the pump laser light source 1 propagates along the emission optical path L.
With continued reference to FIG. 1, a first Nd: YAG crystal 41 and Nd: YVO4The two side surfaces of the crystal 42 are respectively provided with a second antireflection film T2, light antireflection by the second antireflection film T2 is pump laser, oscillation fundamental frequency light in a resonant cavity and first-order Stokes light, the first antireflection film T1 can ensure that polarized light emitted from the pump laser source 1 respectively passes through the first fundamental frequency light-Stokes light high reflection mirror 31, the first Nd: YAG crystal 41 and the Nd: YVO4The crystal 42 and the second fundamental frequency light-stokes light high-reflection mirror 32 can increase the transmissivity of the pump laser light, the oscillation fundamental frequency light in the resonant cavity and the first-order stokes light. In order to obtain laser with more yellow wave bands, a yellow light high-transmittance film TY is further arranged on the surface of the second fundamental frequency light-stokes light high-reflectance mirror 32, and the yellow light high-transmittance film TY can be arranged on the first antireflection film T1 or the high-reflectance film R, or can be arranged on the first antireflection film T1 or the high-reflectance film RDisposed under the film of the first antireflection film T1, not specifically limited in this application, a yellow light high-transmittance film TY to improve the transmittance of yellow light. Third antireflection films T3 can be further arranged on the surfaces of the two sides of the nonlinear frequency doubling crystal 6, light which is subjected to antireflection by the third antireflection films T3 is intracavity oscillation fundamental frequency light, first-order Stokes light and yellow light, and antireflection rates of the intracavity oscillation fundamental frequency light, the first-order Stokes light and the yellow light are improved. The first antireflection film T1, the second antireflection film T2, the third antireflection film T3, and the yellow light high-transmittance film TY may be formed by plating, which is not particularly limited in this application.
The high-power high-energy yellow Raman laser system provided by the embodiment selects Nd: YAG crystal and Nd: YVO4The crystal is used as a gain medium to provide gain for fundamental frequency light, and the Nd-YAG crystal has the characteristic of longer upper energy level service life, so that the laser system can efficiently operate at low repetition frequency, and the output of large single pulse energy is realized. Using Nd: YVO4The crystal has the characteristics of large stimulated emission section, birefringence characteristic and relatively short upper energy level service life, and can realize the operation of polarization, high repetition frequency and high power of laser. Integrates the advantages of two crystals, can realize the high-efficiency operation of fundamental frequency light under high and low repetition frequencies, and then passes through the intracavity Nd, YVO4The Raman frequency shift of the crystal shifts the frequency of the fundamental frequency to a first-order Stokes light wave band, and finally the yellow Raman laser system which can efficiently run under high and low repetition frequencies is realized through the frequency doubling of the intracavity nonlinear frequency doubling crystal, so that the purpose that one laser system can simultaneously improve the high-power and high-energy yellow light output is achieved. In addition, the resonant cavity adopts a double-crystal structure, and utilizes the excellent mechanical properties of Nd: YAG crystal, in which YVO is Nd: YVO4The front of the crystal bears most of pumping power, so that the upper limit of the pumping power limited by mechanical performance can be improved; YVO can effectively relieve Nd by adopting a double-crystal structure4The thermal effect in the crystal ensures that the Raman gain is not greatly reduced due to the influence of the thermal effect, thereby being capable of improving the upper limit of the pumping power limited by the thermal effect. The improvement of the upper limit of the pumping power is beneficial to realizing the output of the yellow laser with high power and large energy.
FIG. 2 shows a second high work function provided by an embodiment of the present applicationThe structure of the high-efficiency yellow-light Raman laser is shown schematically. As shown in fig. 2, the second high-power high-energy yellow raman laser system provided in this embodiment further includes a polarization splitting prism 7, which is located between the first coupling lens 21 and the second coupling lens 22; when the emergent light of the pump laser source 1 is unpolarized light, YVO is the direction of the optical axis F and Nd of the polarization beam splitter prism 74The optical axis direction Y of the crystal 42 is vertical; unpolarized light emitted from the pump laser light source 1 passes through the polarization splitting prism 7 and is converted into polarized light, which propagates along the emission optical path L.
In the high-power high-energy yellow raman laser system provided by this embodiment, the polarization beam splitter prism 7 is adopted to convert the unpolarized pump laser into polarized light, and the output of the polarized laser is finally obtained.
Fig. 3 is a schematic structural diagram of a third high-power high-energy yellow raman laser system according to an embodiment of the present disclosure. As shown in fig. 3, the third high-power high-energy yellow raman laser system provided in this embodiment further includes a third fundamental frequency light-stokes light high-reflection mirror 33, which is located on a side of the laser gain medium 4 away from the first fundamental frequency light-stokes light high-reflection mirror 31, where a plane where the third fundamental frequency light-stokes light high-reflection mirror 33 is located intersects a plane where the first fundamental frequency light-stokes light high-reflection mirror 31 is located, and an intersection angle a is an acute angle; the surfaces of the two sides of the third fundamental frequency light-stokes light high-reflection mirror 33 are both provided with a first antireflection film T1; the light emitted from the laser gain medium 4 is reflected on the third fundamental frequency light-stokes light high-reflection mirror 33, and the nonlinear frequency doubling crystal 6 and the second fundamental frequency light-stokes light high-reflection mirror 32 are positioned on a reflected light path of the third fundamental frequency light-stokes light high-reflection mirror 33; the laser gain medium 4 further includes a second Nd: YAG crystal 43 located at Nd: YVO4And between the crystal 42 and the acousto-optic Q-switch 5, second antireflection films T2 are also arranged on the two side surfaces of the second Nd: YAG crystal 43. In practical application, the first Nd is YAG crystal 41 and the first Nd is YVO4The crystal 42 and the second Nd: YAG crystal 43 should be closely arranged, and for clarity, the first Nd: YAG crystal 41, Nd: YVO are shown in the drawing of the application4The crystal 42 and the second Nd: YAG crystal 43 are shown split. From a third fundamental frequency light-Stokes light-reflecting mirror 33The reflection propagates along the outgoing light path L.
The high-power high-energy yellow Raman laser system provided by the embodiment adopts two Nd: YAG crystals with Nd: YVO sandwiched between the two crystals4The crystal 42, which constitutes a three-crystal structure, can enhance the gain effect on the fundamental frequency light, and can achieve high-power and high-energy yellow light output by realizing high-and low-repetition-frequency operation of the fundamental frequency light. The polarization characteristic of an emission line when the energy level of the Nd crystal is transited is greatly related to the polarization characteristic of emergent light of the pump laser source 1, and when linearly polarized light pumping is adopted, high polarization ratio of fundamental frequency light can be realized; nd: YVO4The crystal 42 has obvious double refraction characteristic, the output fundamental frequency light has obvious polarization, Nd: YVO4Of crystals and Nd: YAG crystals4F3/2→4I11/2Energy level transition emission line, by reasonably selecting parameters of two crystals, Nd: YVO4The crystal 42 emits fundamental frequency light in the polarization direction to gain advantage, so that the intracavity fundamental frequency light can be operated close to linear polarization. By adjusting the modulation frequency of the acousto-optic Q-switch 5 in the cavity, the high and low repeated frequency operation of the fundamental frequency light can be realized, and the frequency operation is performed through Nd: YVO4The Raman frequency shift of the crystal 42 shifts the linear polarization base frequency light frequency to the first-order Stokes light, the generated first-order Stokes light is also polarized light, and the yellow light with different repetition frequencies is finally output through the frequency doubling effect of the intracavity nonlinear frequency doubling crystal 6 and along with the change of the modulation frequency of the acousto-optic Q switch 5.
Fig. 4 is a schematic structural diagram of a fourth high-power high-energy yellow raman laser system according to an embodiment of the present disclosure. As shown in fig. 4, the fourth high-power high-energy yellow raman laser system provided in this embodiment further includes: the device comprises a first pump light high-reflection mirror 01, a second pump light high-reflection mirror 02, a third pump light high-reflection mirror 03, a third coupling lens 04 and a half-wave plate 05. Light emitted from the pump laser source 1 passes through the polarization beam splitter prism 7 and is then split into two paths of orthogonally polarized equal-energy laser, and the two paths are a first light path L1 and a second light path L2 respectively; the second coupling lens 22, the first fundamental frequency light-stokes light high-reflection mirror 31, the resonant cavity 3 and the laser gain medium 4 are all located on the first optical path L1. Specifically, the first pump light high-reflection mirror 01 is located on the second light path L2; light is incident on the first pump light high-reflection mirror 01 to be reflected, the half-wave plate 05 and the second pump light high-reflection mirror 02 are sequentially arranged on a reflection light path of the first pump light high-reflection mirror 01, and after the light passes through the half-wave plate 05, the polarization direction can rotate by 90 degrees; light is incident on the second pump light high-reflection mirror 02 to be reflected, and the third pump light high-reflection mirror 03 is positioned on a reflection light path of the second pump light high-reflection mirror 02; light is incident on the third pump light high-reflection mirror 03 to be reflected, the third coupling lens 04 is located on a reflection light path of the third pump light high-reflection mirror 03, and the third coupling lens 04 plays a role in collimating light; the reflected light of the third pump light high reflecting mirror 03 is incident on the third fundamental frequency light-stokes light high reflecting mirror 33, and the transmitted light of the third fundamental frequency light-stokes light high reflecting mirror 33 is incident in the resonant cavity 3.
The high-power high-energy yellow-light raman laser system provided by this embodiment has the advantages that light propagating along the first light path L1 and the second light path L2 enters the resonant cavity 3 and then exits into the exit light path L, so that a double-end polarization pump structure is formed, the polarization ratio of laser emitted by the Nd: YAG crystal can be increased, the overall polarization ratio of fundamental frequency light is increased, the subsequent noncritical phase matching technology is facilitated to realize frequency doubling, the frequency doubling efficiency is increased, and the utilization efficiency of pump laser is increased.
Note that arrows marked in the drawings of the present application represent the traveling directions of light rays in the optical paths, and the points and vertical lines indicated on the outgoing optical path L, the first optical path L1, and the second optical path L2 represent the polarization directions of light.
The same and similar parts in the various embodiments in this specification may be referred to each other.

Claims (10)

1. A high power high energy yellow raman laser system, comprising:
a pump laser source (1);
the laser coupling subsystem (2) is positioned on the light outgoing side of the pump laser source (1); the laser coupling subsystem (2) comprises a first coupling lens (21) and a second coupling lens (22) which are arranged in parallel, wherein the first coupling lens (21) is positioned between the pump laser source (1) and the second coupling lens (22);
a resonant cavity (3) located on a side of the second coupling lens (22) away from the pump laser source (1); the resonant cavity (3) comprises a first fundamental frequency light-Stokes light high-reflection mirror (31) and a second fundamental frequency light-Stokes light high-reflection mirror (32), and the first fundamental frequency light-Stokes light high-reflection mirror (31) is positioned between the second coupling lens (22) and the second fundamental frequency light-Stokes light high-reflection mirror (32);
a laser gain medium (4) located between the first fundamental frequency light-stokes light high-reflection mirror (31) and the second fundamental frequency light-stokes light high-reflection mirror (32); the laser gain medium (4) comprises a first Nd: YAG crystal (41) and Nd: YVO4A crystal (42), the first Nd: YAG crystal (41) being located between the first fundamental frequency light-Stokes light high reflection mirror (31) and the Nd: YVO4Between the crystals (42);
an acousto-optic Q-switch (5) located between the laser gain medium (4) and the second fundamental frequency light-Stokes light high reflection mirror (32);
a nonlinear frequency doubling crystal (6) located between the acousto-optic Q-switch (5) and the second fundamental frequency light-Stokes light high-reflection mirror (32);
the surfaces of the two sides of the first fundamental frequency light-Stokes light high-reflection mirror (31) and the second fundamental frequency light-Stokes light high-reflection mirror (32) are respectively provided with a first antireflection film (T1) and a high-reflection film (R); the light anti-reflection of the first anti-reflection film (T1) is pump laser, and the light high-reflection of the high-reflection film (R) is intracavity oscillation fundamental frequency light and first-order Stokes light.
2. The high-power high-energy yellow Raman laser system according to claim 1, wherein the emergent light of the pump laser source (1) is polarized light, and the Nd: YVO4The direction (Y) of the optical axis of the crystal (42) is the same as the polarization direction (S) of the polarized light emitted by the pump laser source.
3. The high power high energy yellow Raman laser system according to claim 1, further comprising a polarization splitting prism (7),between the first coupling lens (21) and the second coupling lens (22); the optical axis direction (F) of the polarization beam splitter prism (7) and the Nd: YVO4The direction (Y) of the optical axis of the crystal (42) is vertical;
emergent light of the pump laser source (1) is unpolarized light.
4. The high-power high-energy yellow-light Raman laser system according to claim 3, wherein the resonant cavity (3) further comprises a third fundamental frequency light-Stokes light high-reflection mirror (33) located on a side of the laser gain medium (4) away from the first fundamental frequency light-Stokes light high-reflection mirror (31), and a plane in which the third fundamental frequency light-Stokes light high-reflection mirror (33) is located intersects a plane in which the first fundamental frequency light-Stokes light high-reflection mirror (31) is located, and an intersection angle (a) of the intersection angle is an acute angle; the surfaces of the two sides of the third fundamental frequency light-Stokes light high-reflection mirror (33) are provided with the first antireflection film (T1); the light emitted from the laser gain medium (4) is reflected on the third fundamental frequency light-Stokes light high-reflection mirror (33), and the nonlinear frequency doubling crystal (6) and the second fundamental frequency light-Stokes light high-reflection mirror (32) are positioned on a reflection light path of the third fundamental frequency light-Stokes light high-reflection mirror (33);
the laser gain medium (4) further comprises a second Nd: YAG crystal (43) located at the Nd: YVO4A crystal (42) and the acousto-optic Q-switch (5).
5. The high power high energy yellow raman laser system of claim 4, further comprising: the device comprises a first pump light high-reflection mirror (01), a second pump light high-reflection mirror (02), a third pump light high-reflection mirror (03), a third coupling lens (04) and a half-wave plate (05);
light emitted from the pump laser source (1) passes through the polarization beam splitter prism (7) and then is divided into two light paths, wherein the two light paths are a first light path (L1) and a second light path (L2); the second coupling lens (22), the resonant cavity (3) and the laser gain medium (4) are all located on the first optical path (L1);
the first pump light high-reflection mirror (01) is positioned on the second optical path (L2);
the light is incident on the first pump light high-reflection mirror (01) and is reflected, and the half-wave plate (05) and the second pump light high-reflection mirror (02) are sequentially arranged on a reflection light path of the first pump light high-reflection mirror (01);
the light is incident on the second pump light high-reflection mirror (02) and is reflected, and the third pump light high-reflection mirror (03) is positioned on a reflection light path of the second pump light high-reflection mirror (02);
light is incident on the third pump light high-reflection mirror (03) and is reflected, the third coupling lens (04) is positioned on a reflection light path of the third pump light high-reflection mirror (03), and the reflection light of the third pump light high-reflection mirror (03) is incident into the resonant cavity (3) through the third fundamental frequency light-Stokes light high-reflection mirror (33).
6. The high-power high-energy yellow Raman laser system according to claim 2 or 5, wherein the first Nd: YAG crystal (41), the Nd: YVO4And second antireflection films (T2) are arranged on the two side surfaces of the crystal (42) and the second Nd-YAG crystal (43), and light antireflection by the second antireflection films (T2) is pump laser, oscillation fundamental frequency light in a resonant cavity and first-order Stokes light.
7. The high power large energy yellow raman laser system according to claim 2 or 5, characterized in that a yellow highly transparent film (TY) is further provided on the surface of the second fundamental frequency light-stokes light high reflection mirror (32).
8. The high power large energy yellow raman laser system according to claim 2 or 5, characterized in further comprising an energy transmitting fiber (06) located between the pump laser source (1) and the first coupling lens (21).
9. The high-power high-energy yellow Raman laser system according to claim 2 or 5, wherein the nonlinear frequency doubling crystal (6) is an LBO frequency doubling crystal and is obtained by cutting according to a non-critical phase matching angle.
10. The high-power high-energy yellow-light Raman laser system according to claim 9, wherein a third antireflection film (T3) is disposed on two side surfaces of the nonlinear frequency doubling crystal (6), and light antireflection by the third antireflection film (T3) is intracavity fundamental frequency light, first-order Stokes light and yellow light.
CN202010728285.6A 2020-07-24 2020-07-24 High-power high-energy yellow Raman laser system Pending CN111900606A (en)

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Application publication date: 20201106