CN105610041B - The micro-slice laser system of low time jitter picosecond pulse output - Google Patents
The micro-slice laser system of low time jitter picosecond pulse output Download PDFInfo
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- CN105610041B CN105610041B CN201610044004.9A CN201610044004A CN105610041B CN 105610041 B CN105610041 B CN 105610041B CN 201610044004 A CN201610044004 A CN 201610044004A CN 105610041 B CN105610041 B CN 105610041B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/139—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
Abstract
The micro-slice laser system of low time jitter picosecond pulse output of the present invention, including pump coupling device, spectroscope, micro-slice laser are formed by the first lens and the second lens；It further include external cavity type semiconductor pulse laser.The micro-slice laser is by output coupling mirror, gain media, semiconductor saturable absorber and heat sink forms；Pump coupling device is located on external cavity type semiconductor pulse laser output light path, the pump light of external cavity type semiconductor pulse laser output is incident on the second lens after the first collimated in pump coupling device, it converges to form converging beam through the second lens, gain media receives pump light and generates the coupled outgoing mirror output of picosecond pulse laser.Micro-slice laser system of the invention increases laser gain medium to Pumping light absorption amount, to improve micro-slice laser transfer efficiency, reduces micro-slice laser operation threshold, and increase its damage threshold, and reduce the time jittering of picosecond pulse laser output.
Description
Technical field
The invention belongs to picosecond pulses to export passive Q-adjusted micro-slice laser field, and in particular to a kind of external cavity type semiconductor
The passive Q-adjusted micro-slice laser system of the low time jitter picosecond pulse output of pulse laser pumping.
Background technique
It can get picosecond pulse by passive Q-adjusted micro-slice laser, obtain picosecond pulse compared to using mode-locking technique
Method, passive Q-adjusted micro-slice laser have the advantages that small in size, price is low, mechanical stability is high.The chamber length of laser cavity is shorter,
The pulsewidth of passive Q regulation pulse is shorter.In order to obtain about 100 picoseconds of passive Q regulation pulse output, in general entire microchip laser
The equivalent cavity length of device uses semiconductor saturable absorber (SESAM) as passive Q-adjusted device with into one less than 200 microns
Step reduces the influence long to laser cavity chamber due to its thickness bring of saturable absorber.
Absorption η of the gain media to pump lighta=1-exp (- α l), wherein α is the absorption coefficient of the gain media, and l is
The length of gain media.The gain media certain for length only increases increasing to improve it to the absorption efficiency of pump light
The absorption coefficient of beneficial medium.Absorption coefficient=σA, effΔ N, wherein Δ N is inverted population density, it is close with pumping light power
Degree and laser gain medium relating to parameters.For the effective absorption cross-section of gain media, with pump light
The relating to parameters of wavelength and laser gain medium, if pump wavelength closer to laser gain medium peak absorbtivity wavelength, that
The spectrum width of pump light is narrower, and effective absorption cross-section product is bigger.For passive Q-adjusted picosecond pulse output micro-slice laser,
Laser gain medium can generate the influence of three aspects: (1) gain media pair to the absorption size of pump light to its laser activity
The absorption of pump light is smaller, and the threshold value of laser is higher, and transfer efficiency is lower, and required pumping light power is higher；(2) not by
The pump light that gain media absorbs will be by being incident on saturable absorber after gain media, and saturable absorber will absorb this
Part pump light is simultaneously translated into heat, and the thermal stress of generation will cause the induced damage of saturable absorber, and microplate is caused to swash
Light device cannot work；(3) gain media is bigger to the absorption of pump light, and the laser gain of acquisition is higher, then time jitter characteristic
It is smaller.Time jitter characteristic will affect the stability of passive Q-adjusted picosecond pulse output, and further influence its in industrial processes or
Use in person's scientific research, thus time jitter characteristic is the smaller the better.
For general semiconductor laser, when output power increases, the temperature of laser is increased, optical maser wavelength red shift；This
When the absorbability of pump light is weakened with the gain media in the micro-slice laser of general semiconductor laser pumping, laser
Threshold value increases, and transfer efficiency is lower, and the pump light that semiconductor saturable absorber absorbs increases, and the heat of generation increases, temperature
Degree difference increases, and thermal stress increases, and at damage, also resulting in micro-slice laser cannot work manufacturing semiconductor saturable absorber.This
Outside, the spectrum width of general semiconductor laser generally has 2-3nm, and wavelength with temperature and output power change greatly, this can make
The time jitter of the train of pulse of passive Q-adjusted micro-slice laser output is larger.
Summary of the invention
The purpose of the present invention is exactly in view of the drawbacks of the prior art and insufficient, provides a kind of external cavity type semiconductor pulse
The passive Q-adjusted micro-slice laser system of the low time jitter picosecond pulse output of laser pumping, to improve laser gain medium
Absorption to pump light reduces the operation threshold of micro-slice laser to improve the transfer efficiency of micro-slice laser, and increases
Its damage threshold, and reduce the time jittering of picosecond pulse laser output.
The passive Q-adjusted micro-slice laser system of low time jitter picosecond pulse output of the present invention, including thoroughly by first
Pump coupling device, the spectroscope, micro-slice laser of mirror and the second lens composition；The micro-slice laser by output coupling mirror,
Gain media, semiconductor saturable absorber and heat sink composition, output coupling mirror, gain media, semiconductor saturable absorber
Successively glued together, the semiconductor saturable absorber is welded on heat sink；According to the invention also includes external cavity types partly to lead
Body pulse laser；
The pump coupling device is located on the output light path of external cavity type semiconductor pulse laser, external cavity type semiconductor arteries and veins
The pump light for rushing laser output is incident on the second lens after the first collimated in pump coupling device, thoroughly through second
Mirror converges to form converging beam；The gain media of the micro-slice laser is located at the place with a tight waist of the converging beam, and gain media connects
It receives pump light and generates the coupled outgoing mirror output of picosecond pulse laser, the spectroscope is located at the skin of coupled outgoing mirror output
In the optical path of pulse per second (PPS) laser.
The micro-slice laser system of above-mentioned low time jitter picosecond pulse output, the external cavity type semiconductor pulse laser
Output wavelength be micro-slice laser gain media peak absorbtivity wavelength, output spectrum width be less than 1nm.
The micro-slice laser system of above-mentioned low time jitter picosecond pulse output, the external cavity type semiconductor pulse laser
By semiconductor laser, the refrigeration module for keeping semiconductor laser operating temperature stable, for controlling refrigeration module
The temperature control device of cryogenic temperature provides the driving power of power supply, for collimating pump for semiconductor pulse laser and temperature control device
Collimator apparatus, Littrow balzed grating, and the focus lens unit of Pu light are constituted；The refrigeration module is mounted on semiconductor laser
It is connect on device and with temperature control device, the semiconductor laser, temperature control device are connect with driving power respectively；The semiconductor swashs
It is incident on the balzed grating, of Littrow after the collimated device collimation of light device output pump light, pumping laser is through Littrow balzed grating,
Light splitting rear portion is divided into the focus lens unit being mapped in its optical path, is emitted after line focus lens devices collimation, convergence.
The micro-slice laser system of above-mentioned low time jitter picosecond pulse output, the focus lens unit by cylindrical mirror and
One globe lens composition, the pumping laser are divided into the focusing being mapped in its optical path through Littrow balzed grating, light splitting rear portion
On cylindrical mirror in lens devices, it is coupled in single mode optical fiber and is emitted through globe lens convergence after collimated.
The micro-slice laser system of above-mentioned low time jitter picosecond pulse output, the spectroscope are located at coupled outgoing mirror
It in the optical path of the pulse laser of output, and places with the optical path in 45° angle, is exported for reflecting pulse laser.
The micro-slice laser system of above-mentioned low time jitter picosecond pulse output, it is characterised in that the micro-slice laser
The thickness of laser gain medium is less than 200 μm, for the pulse laser for exporting picosecond.
The external cavity semiconductor laser refers to the semiconductor laser with external cavity feedback technology.Compared to common half
Conductor laser, external cavity semiconductor laser has many advantages, such as that spectral line is narrow, wavelength stability is high, high-efficient, the service life is long, wide
It is general to be applied to the fields such as the measurement of light wave device, gauge check, high-resolution spectroscopy, atmospheric environment and water quality detection.This hair
It is bright using external cavity type semiconductor pulse laser come pump micro-slice laser, the output wavelength by adjusting semiconductor laser exists
At the absorption peak of laser gain medium, and spectrum width is made to be less than 1nm, greatly improves absorption of the laser gain medium to pump light
Amount, increases the light conversion efficiency of micro-slice laser；Absorption of the semiconductor saturable absorber to pump light is reduced simultaneously, reduction can
Heat sink accumulated amount on saturated absorbing body, reduces the risk of induced damage, increases the damage threshold of micro-slice laser；Gain media pair
The absorption of pump light increases, and the laser gain that micro-slice laser obtains increases, and can reduce the time jitter of micro-slice laser output
Property.In addition, generally requiring the power density for reducing pumping laser, at this time such as when obtaining the laser compared with low pulse repetition frequency
Fruit is pumped using continuous laser, and small pump power density will increase the time jittering of micro-slice laser output.In order to compared with
Under small repetition rate working condition, still it is able to maintain micro-slice laser and exports lower time jittering, present invention employs
The external cavity type semiconductor pulse laser of pulse pump mode carrys out pump micro-slice laser.Its principle are as follows: when pumping laser pulse
It, can be close by adjusting the power of pumping pulse light when width and period are much smaller than the upper level lifetime of laser gain medium
It spends to control the pumping pulse number for generating pulse output for micro-slice laser.And before micro-slice laser pulse output,
Inverted population in gain media can keep a geostationary value, i.e. inverted population substantially between several pumping pulses
It is in increase-holding-increase-holding repetitive process during multiple-pulse pumping, therefore the last one pumping pulse is arrived
When coming, inverted population is larger, the last one pumping pulse will obtain further such that inverted population increases above threshold value
Obtain pulsed laser output.Under such pump mode, the pulse output of micro-slice laser will be established in a biggish reversion
On the basis of population, therefore laser pulse settling time is fast and stablizes, and laser output time shake is small, and laser stability
It is high.
The micro-slice laser system of low time jitter picosecond pulse output of the present invention compared with prior art, have with
Lower advantageous effects:
1, micro-slice laser system of the present invention, using external cavity type semiconductor pulse laser as pumping source, effectively
Ground increases laser gain medium to the uptake of pump light, to improve the transfer efficiency of micro-slice laser.
2, micro-slice laser system of the present invention, using external cavity type semiconductor pulse laser as pumping source, effectively
Ground increases laser gain medium to the uptake of pump light, reduces absorption of the semiconductor saturable absorber to pump light, reduces
Heat sink accumulated amount on saturable absorber, reduces the risk of induced damage, increases the damage threshold of micro-slice laser.
3, micro-slice laser system of the present invention can be with using external cavity type semiconductor pulse laser as pumping source
The pumping pulse number that a pulse exports is generated for micro-slice laser to control by adjusting the power density of pumping pulse light,
And the output of micro-slice laser is established on the basis of a relatively large inverted population, swash so as to reduce microplate
The time jittering of light device output.
4, micro-slice laser system of the present invention can be with using external cavity type semiconductor pulse laser as pumping source
In the case where the work of smaller repetition rate, still micro-slice laser is kept to export lower time jitter characteristic.
Detailed description of the invention
Fig. 1 is the overall structure diagram of micro-slice laser system of the present invention.
Fig. 2 is persistently to pump partly leading for micro-slice laser after half an hour to micro-slice laser using general semiconductor laser
The damage figure of body saturated absorbing body.
Fig. 3 is output power and time jitter using micro-slice laser system of the present invention with output laser pulse frequency
The curve of rate variation.
Fig. 4 is the picosecond pulse laser hot spot figure obtained using micro-slice laser system of the present invention.
Fig. 5 is to control two pumping pulses using micro-slice laser system of the present invention to obtain an output laser pulse
Oscillograph recording figure.
In figure, 1-external cavity type semiconductor pulse laser, 1-1-semiconductor laser, 1-2-refrigeration module, 1-3-
Temperature control equipment, 1-4-driving power, 1-5-collimator apparatus, 1-6-Littrow balzed grating, 1-7-condenser lens dress
It sets, 1-7-1-globe lens, 1-7-2-cylindrical mirror, 2-single mode optical fibers, 3-pump coupling devices, the first lens of 3-1-, 3-
2-the second lens, 4-micro-slice lasers, 4-1-micro-slice laser output coupling mirror, the gain of 4-2-micro-slice laser are situated between
Matter, 4-3-micro-slice laser semiconductor saturable absorber, 4-4-micro-slice laser is heat sink, 5-spectroscopes.
Specific embodiment
Below with reference to the accompanying drawings and specific embodiments to the micro- of low time jitter picosecond pulse output of the present invention
Chip laser system is described in further detail, but is not meant to be any restriction to present invention protection content.
Embodiment 1
The microplate of the low time jitter picosecond pulse output of the pumping of external cavity type semiconductor pulse laser described in the present embodiment
The structure of Optical Maser System as shown in Figure 1, be made of the first lens 3-1 and the second lens 3-2 pump coupling device 3, light splitting
Mirror 5 and micro-slice laser 4；The micro-slice laser is by output coupling mirror 4-1, gain media 4-2, semiconductor saturable absorber
4-3 and heat sink 4-4 composition, output coupling mirror, gain media, semiconductor saturable absorber successively formation laser glued together
Chamber, the semiconductor saturable absorber are welded on heat sink, further include external cavity type semiconductor pulse laser, the external cavity type half
The pumping source for the micro-slice laser system that conductor pulse laser is exported as picosecond pulse, the external cavity type semiconductor pulse swash
The output wavelength of light device is the peak absorbtivity wavelength of the gain media of micro-slice laser, and output spectrum width is less than 1nm；
The pump coupling device 3 is located on the output light path of external cavity type semiconductor pulse laser, the pump light of output
It is incident on the second lens 3-2 after the first lens 3-1 collimation in pump coupling device, converges to form convergence through the second lens
Light beam, the gain media 4-2 of the micro-slice laser 4 are located at the place with a tight waist of the converging beam, and gain media receives pump light simultaneously
The coupled outgoing mirror 4-1 output of pulse laser is generated, the spectroscope 5 is located at the pulse laser of coupled outgoing mirror 4-1 output
Optical path on, and with the optical path in 45° angle degree place, for by pulse laser reflect export.
The external cavity type semiconductor pulse laser is distributed by semiconductor laser 1-1, for absorbing semiconductor laser
The refrigeration module 1-2 of heat, cryogenic temperature for controlling refrigeration module temperature control device 1-3, be semiconductor pulse laser
Device 1 and temperature control device 1-3 provide driving power 1-4, the collimator apparatus 1-5 for collimating pump light, the Littrow glittering of power supply
Grating 1-6 and focus lens unit 1-7 is constituted, and the refrigeration module 1-2 is mounted on semiconductor laser 1-1 and fills with temperature control
1-3 connection is set, the semiconductor laser 1-1, temperature control device 1-3 are connect with driving power 1-4 respectively, the condenser lens dress
1-7 is set to be made of a cylindrical mirror 1-7-2 and a globe lens 1-7-1；
Littrow balzed grating, is incident on after the collimated device 1-5 collimation of semiconductor laser 1-1 output pump light
On 1-6, pumping laser is divided to obtain first-order diffraction light and zero order light through Littrow balzed grating, and wherein first-order diffraction light is fed back to
The active area of semiconductor laser 1-1, and acted on the light field in active area, to choose laser output wavelength and compression output spectra
Width, zero order light are incident on the cylindrical mirror 1-7-2 in the focus lens unit 1-7 in its optical path, saturating through ball after being collimated
Mirror 1-7-1 convergence, which is coupled in single mode optical fiber 2, to be emitted.
Each member for the low time jitter micro-slice laser system that external cavity type semiconductor pulse laser pumps in the present embodiment
Part is commercially available in market, and the parameter and specification of each element are as follows:
The polarization laser central wavelength of external cavity type semiconductor pulse laser maximum output is 808.4nm, and laser exports arteries and veins
Width is 0.4nm, and laser pulse peaks power is 650mW, pulse width 200ns, pulse period 1000KHz, single mode optical fiber
6 μm of core diameter；First lens, the second lens are coated with the saturating deielectric-coating of height to pump light 808nm；Spectroscope is towards pump light
Be coated on one side to the high saturating deielectric-coating of pump light 808nm 45° angle degree, be coated on one side to pump light towards micro-slice laser
The deielectric-coating of the high pulse laser 1064nm 45° angle degree high reflection thoroughly and to micro-slice laser output of 808nm 45° angle degree；
The output coupling mirror of micro-slice laser is coated on one side towards pump light to pump light 808nm and to micro-slice laser output
Pulse laser 1064nm highly transmissive deielectric-coating, and being coated on one side towards gain media it is highly transmissive to pump light 808nm, to arteries and veins
Impulse light 1064nm is the deielectric-coating of 10% transmitance；The gain media of micro-slice laser is Nd:YVO4, with a thickness of 150 μm, two
End is coated with the deielectric-coating highly transmissive to pulse laser 1064nm；The semiconductor saturable absorber of micro-slice laser is SESAM,
Saturation can flow for 98 μ J/cm2, modulation depth 5%, relaxation time 1ps.
Using general semiconductor laser pumping micro-slice laser, micro-slice laser output wavelength be 1064nm laser about
In 30 minutes, the laser output power decline of micro-slice laser is rapid, at this time in the mobile microchip laser in horizontally or vertically direction
Device, until not having impaired loci on the micro-slice laser in pump light focal position, output power, which rises, to be restored to initial value, but
It is to begin to decline again after a short period of time.At this point, observing micro-slice laser under the microscope, damage as shown in Figure 2 is found.This is
Since absorption of the laser gain medium to pump light is smaller, saturable absorber absorbs a large amount of pump light, forms larger
Temperature difference and thermal stress, caused induced damage.
The micro-slice laser system pumped using external cavity type semiconductor pulse laser, wherein external cavity type semiconductor pulse swashs
The output wavelength of light device is 808.4nm, spectrum width 1nm；The diameter for coupling single mode optical fiber is 6 μm, numerical aperture 0.12；Laser
Pulse peak power is 650mW, pulse width 200ns, pulse period 1000KHz.The focal length of the first lens used is
20mm, the focal length of the second lens are 60mm, the position of mobile the second lens of micro-slice laser distance, until obtaining stable
The picosecond pulse laser of 1000KHz exports.Then micro-slice laser is moved far from the second lens, to increase on micro-slice laser
Pump spot, that is, reduce the pump power density that is added on micro-slice laser.With the increase of pump spot, output power subtracts
Small, pumping pulse repetition rate reduces, and time jitter is also with reduction, as shown in Figure 3.From the figure 3, it may be seen that the external cavity type is partly led
When exporting mean power is 2.13mW, pulse output frequencies are the micro-slice laser system of body pulse laser pumping
111.1KHz, i.e. nine pumping pulse pumpings generate a pulsed laser output, and the time jitter of measurement is only 0.0315%, figure
3 and Fig. 4 is that laser output mean power is 5.57mW, laser repetition rate 500KHz, output light when time jitter 0.094%
The pulse shape figure of the pumping laser and output laser of spot figure and oscillograph record.As shown in Figure 5, the low time of the present invention trembles
The output facula of the micro-slice laser system of dynamic picosecond pulse output is Gaussian Profile output.As shown in Figure 5, feelings are exported in this kind
Under condition, a pulsed laser output is obtained by two pumping pulses.
Claims (2)
1. a kind of micro-slice laser system of low time jitter picosecond pulse output, including thoroughly by the first lens (3-1) and second
Pump coupling device (3), spectroscope (5) and the micro-slice laser (4) of mirror (3-2) composition；The micro-slice laser is defeated by coupling
Appearance (4-1), gain media (4-2), semiconductor saturable absorber (4-3) and heat sink (4-4) composition；Output coupling mirror, increasing
Beneficial medium, semiconductor saturable absorber successively formation laser cavity glued together；The semiconductor saturable absorber welding
On heat sink, it is characterised in that further include external cavity type semiconductor pulse laser (1)；The external cavity type semiconductor pulse laser
The pumping source of micro-slice laser system as picosecond pulse output, output wavelength are the peak of the gain media of micro-slice laser
It is worth absorbing wavelength, output spectrum width is less than 1nm；
The pump coupling device is located on the output light path of external cavity type semiconductor pulse laser, and external cavity type semiconductor pulse swashs
The pump light of light device output is incident on the second lens after the first collimated in pump coupling device, is converged through the second lens
For combinate form at converging beam, the gain media of the micro-slice laser is located at the place with a tight waist of the converging beam, and gain media receives pump
Pu light simultaneously generates the coupled outgoing mirror output of pulse laser, and the spectroscope is located at the pulse laser of coupled outgoing mirror output
In optical path.
2. the micro-slice laser system of low time jitter picosecond pulse output according to claim 1, it is characterised in that described
External cavity type semiconductor pulse laser (1) by semiconductor pulse laser (1-1), for keeping semiconductor pulse laser to work
The stable refrigeration module of temperature (1-2), cryogenic temperature for controlling refrigeration module temperature control device (1-3), be semiconductor arteries and veins
It rushes laser (1-1) and temperature control device (1-3) provides the driving power (1-4) of power supply, the collimator apparatus for collimating pump light
(1-5), Littrow balzed grating, (1-6) and focus lens unit (1-7) are constituted；The refrigeration module is mounted on semiconductor pulse
It is connect on laser and with temperature control device, the semiconductor pulse laser, temperature control device are connect with driving power respectively；Partly lead
It is incident on the balzed grating, of Littrow after the collimated device collimation of body pulse laser output pump light, pumping laser is through Littrow
Balzed grating, light splitting rear portion is divided into the focus lens unit being mapped in its optical path, line focus lens devices collimation, convergence
After be emitted.
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| CN108063364B (en) * | 2018-01-05 | 2020-06-26 | 南京大学 | Semiconductor external cavity mode-locked laser based on cadmium arsenide material |
| CN112713493A (en) * | 2020-12-29 | 2021-04-27 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Semiconductor saturable absorption mirror capable of improving thermal damage resistance and manufacturing method thereof |
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