CN112713493A - Semiconductor saturable absorption mirror capable of improving thermal damage resistance and manufacturing method thereof - Google Patents
Semiconductor saturable absorption mirror capable of improving thermal damage resistance and manufacturing method thereof Download PDFInfo
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- CN112713493A CN112713493A CN202011600122.6A CN202011600122A CN112713493A CN 112713493 A CN112713493 A CN 112713493A CN 202011600122 A CN202011600122 A CN 202011600122A CN 112713493 A CN112713493 A CN 112713493A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/025—Constructional details of solid state lasers, e.g. housings or mountings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0401—Arrangements for thermal management of optical elements being part of laser resonator, e.g. windows, mirrors, lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
Abstract
The invention discloses a semiconductor saturable absorption mirror capable of improving thermal damage resistance and a manufacturing method thereof, wherein the semiconductor saturable absorption mirror comprises a metal bottom plate, a semiconductor refrigerating sheet is welded on the top of the metal bottom plate through solder, a metal heat sink is welded on the semiconductor refrigerating sheet through solder, and a thermistor is adhered on the surface of the metal heat sink through solder; one side of the metal heat sink is welded with an SESAM chip through welding flux. The semiconductor saturable absorption mirror capable of improving the thermal damage resistance is characterized in that the metal bottom plate, the semiconductor refrigerating sheet, the metal heat sink, the thermistor and the SESAM chip are welded by adopting solder instead of the existing glue for bonding, so that the pollution of the SESAM caused by the use of the glue is avoided, and the semiconductor saturable absorption mirror has the advantages of excellent heat dissipation performance, wide working temperature range, high reliability, good long-term stability, long service life and the like, and the thermal damage resistance of the SESAM chip is greatly improved.
Description
Technical Field
The invention relates to the technical field of laser, in particular to a semiconductor saturable absorber mirror capable of improving thermal damage resistance and a manufacturing method thereof.
Background
The basic structure of a Semiconductor saturable absorber mirror (SESAM) is to combine a mirror and a saturable absorber, and is often used as a cavity mirror in a laser cavity (see fig. 1 in the attached drawings of the specification). Generally, the lowest layer is a substrate made of GaAs material, the upper surface of the substrate is an AlAs-AlGaAs bragg total reflection mirror, a saturable absorber film is grown on the bragg total reflection mirror, the uppermost layer is a mirror made of semiconductor material, or the interface of the semiconductor and air is directly used as a mirror, so that a fabry-perot cavity is formed.
The SESAM serves as a core mode-locking element for ultrafast lasers and can be used to generate picosecond or femtosecond laser pulses. The basic process is that multiple pulses disorganized in a continuous laser can be modulated into regular ultra-short bursts by the loss mechanism of a saturable absorber. The saturable absorber is bleached under strong light, so that most of the energy in the cavity reaches the reflector through the saturable absorber and is reflected back to the laser cavity again; under weak light, the laser has the characteristic of unsaturated absorption, absorbs all incident light, effectively removes the weak light from a laser cavity, and has the inhibition effect of Q-switching mode locking. And because the front edge part of the pulse is absorbed, the pulse width can be gradually narrowed in the reflection process, and stable mode-locking pulse output can be realized by repeating the process for many times in the resonant cavity.
In ultrafast lasers, there are two main causes of SESAM damage: 1) thermal damage due to laser induced rise in SESAM temperature; 2) non-thermal damage, especially damage caused by strong pulses generated by Q-switching instabilities within the cavity. Non-thermal damage caused by Q-switching instability can be effectively inhibited by generally selecting an SESAM with low modulation depth and proper saturation energy threshold and optimizing the design of the laser resonant cavity. Therefore, researchers are focusing on how to reduce thermal damage of SESAMs. In reducing thermal damage to the SESAM, the main measures currently used include: 1) the SESAM chip is adhered to a metal material (such as copper, aluminum and the like) base through ultraviolet curing glue, thermal curing glue or heat-conducting silicon glue, and then the metal material base is subjected to TEC temperature control, water cooling heat dissipation, air cooling heat dissipation or natural heat dissipation; 2) the SESAM chip is attached to the center of the ceramic ferrule at the FC type optical fiber joint, the periphery of the ceramic ferrule is sealed by optical fiber glue (such as 353ND), and the optical fiber joint is fixed on a metal heat sink with an FC adapter interface by taking heat-conducting silicone grease, heat-conducting silver glue or radiating fins as heat-conducting media. The second mode, easy operation, full fiber structure are favorable to dwindling the laser instrument volume, improve the stability of laser instrument, but heat dispersion is relatively poor, and life is shorter, compares with it, and first mode has good heat dispersion, the SESAM area is great, can provide damage the chance many times, increases advantages such as life. Because the two modes involve the use of glue to fix the SESAM chip in the operation process, the surface of the SESAM chip is easy to pollute, and meanwhile, after the glue is cured, the glue has high brittleness, poor impact vibration resistance and poor aging resistance, thereby influencing the service life of the SESAM and the long-term stability of the laser.
Disclosure of Invention
The present invention is directed to a semiconductor saturable absorber mirror with improved thermal damage resistance and a method for manufacturing the same, so as to solve the problems of the background art.
In order to achieve the purpose, the invention provides the following technical scheme:
a semiconductor saturable absorption mirror capable of improving thermal damage resistance performance comprises a metal base plate, wherein a semiconductor refrigeration sheet is welded on the top of the metal base plate through solder, a metal heat sink is welded on the semiconductor refrigeration sheet through solder, and a thermistor is adhered on the surface of the metal heat sink through solder; one side of the metal heat sink is welded with an SESAM chip through welding flux.
In this embodiment, the metal base plate is preferably made of a metal material such as copper, aluminum, or kovar alloy.
Preferably, gold layer films with the size of hundreds of microns are plated on the top surface and the bottom surface of the semiconductor refrigeration piece respectively.
As a preference of the present embodiment, the metal heat sink includes a first soldering body and a second soldering body; the first welding body and the second welding body are welded together through welding flux, the first welding body is welded with the semiconductor refrigeration piece, and the second welding body is welded with the SESAM chip.
Preferably, in this embodiment, the first welded body has a cubic structure, and the second welded body has a cylindrical structure.
Preferably, the surfaces of the first and second welding bodies are plated with gold films in the order of hundreds of microns.
Preferably, the SESAM chip includes a SESAM chip body, and a gold plating layer is plated on a surface of the SESAM chip body.
Preferably, the size of the SESAM chip body is not larger than the cross-sectional area of the cylinder in the second solder body.
The embodiment of the invention also provides a manufacturing method of the semiconductor saturable absorber mirror capable of improving the thermal damage resistance, which comprises the following steps:
the method comprises the following steps: cleaning the welding surface of the metal bottom plate and the metal heat sink, the hot surface and the cold surface of the semiconductor refrigeration sheet, the thermistor and the gold-plated surface of the SESAM chip by using a cleaning material;
step two: placing a proper amount of solder A on the welding surface of the metal base plate, tightly attaching the hot surface of the semiconductor refrigeration piece to the solder A, heating to a preset temperature for a period of time, and cooling to normal temperature after the hot surfaces of the metal base plate and the semiconductor refrigeration piece are fully infiltrated with the solder A;
step three: placing a proper amount of solder A on the welding surface of a first welding body in the metal heat sink, then tightly attaching the thermistor to the solder A, heating to a preset temperature for a period of time, and cooling to normal temperature after the welding surface of the first welding body, the thermistor and the solder A are fully soaked;
step four: placing a proper amount of solder B on the welding surface of the first welding body in the metal heat sink, which is welded with the semiconductor refrigerating sheet, attaching the cold surface of the semiconductor refrigerating sheet to the solder B, heating to a preset temperature, and cooling to normal temperature after the welding surface of the first welding body in the metal heat sink and the semiconductor refrigerating sheet are respectively and fully infiltrated with the solder B;
step five: placing a proper amount of C solder on the welding surface of the second welding body in the metal heat sink, tightly attaching the SESAM chip to the C solder, heating to a preset temperature for a period of time, and cooling to normal temperature after the welding surface of the second welding body in the metal heat sink, the SESAM chip and the C solder are fully soaked;
step six: and detecting whether a welding cavity exists on the welding surface of the SESAM chip by adopting ultrasonic or X-ray, if so, increasing the heating temperature or prolonging the heating time, and repeating the operation steps of the fifth step until no welding cavity is detected.
In this embodiment, the melting point temperatures of the solder a, the solder B, and the solder C are preferably decreased in this order.
Compared with the prior art, the invention has the following beneficial effects:
(1) the semiconductor saturable absorption mirror capable of improving the thermal damage resistance of the invention adopts solder welding among the metal bottom plate, the semiconductor refrigerating sheet, the metal heat sink, the thermistor and the SESAM chip to replace the existing glue for bonding, thereby not only avoiding the pollution caused by the use of glue to the SESAM, but also having the advantages of excellent heat dissipation performance, wide working temperature range, high reliability, good long-term stability, long service life and the like, and greatly improving the thermal damage resistance of the SESAM chip.
(2) The semiconductor saturable absorption mirror capable of improving the thermal damage resistance is characterized in that the metal base plate, the semiconductor refrigerating sheet and the metal heat sink are all made of metal materials, so that the thermal damage resistance of the SESAM is further improved, and a constant-temperature working environment can be provided for the SESAM by jointly monitoring and cooling the semiconductor refrigerating sheet and the thermistor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a semiconductor saturable absorber mirror in the prior art;
FIG. 2 is a schematic diagram of an overall structure of a semiconductor saturable absorber mirror according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of the metal heat sink in the embodiment of the present invention;
fig. 4 is a schematic structural diagram of an SESAM chip according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "horizontal", "vertical", "upper", "lower", "left", "right", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus are not to be construed as limiting the present invention, and the specific meanings of the above terms in the present invention can be understood in a specific case by those skilled in the art.
Referring to fig. 2 to 4, an embodiment of the present invention provides a semiconductor saturable absorber mirror capable of improving thermal damage resistance, which specifically includes the following components:
metal base plate 01: the metal base plate 01 is used for supporting a heat sink, the metal base plate 01 can be processed by copper, aluminum or kovar alloy (in the embodiment, the metal base plate 01 is processed by red copper material), and the semiconductor refrigerating piece 02 is welded on the top of the metal base plate 01 through a welding flux (an A welding flux is adopted, the A welding flux is a gold-tin welding piece (Au10Sn90), and the melting point temperature is 217 ℃).
Semiconductor refrigeration piece 02: the semiconductor refrigeration piece 02 is used for accurately controlling the temperature of the metal heat sink 03 and providing a constant-temperature working environment of not more than +/-0.1 ℃ for the SESAM chip 05, in the embodiment, the semiconductor refrigeration piece 02 can be of a square or round structure and the like, and two welding surfaces (the welding surface welded with the metal base plate 01 is a hot surface and the welding surface welded with the metal heat sink 03 is a cold surface) of the semiconductor refrigeration piece 02 can be plated with a gold film with hundred microns by adopting electroplating, evaporation or ion beam sputtering and the like. The cold surface of the semiconductor refrigeration piece 02 is welded with a metal heat sink 03 through a solder (B solder is adopted, the B solder is an indium-silver soldering piece (ln97Ag3), and the melting point temperature is 143 ℃).
Metal heat sink 03: the thermistor 04 is attached to the surface of the metal heat sink 03 by solder (solder a, which is a gold-tin solder sheet (Au10Sn90) having a melting point of 217 ℃). Referring to fig. 2 to 3, the metal heat sink 03 includes a first welded body 03-1 and a second welded body 03-2; the first welding body 03-1 and the second welding body 03-2 are welded together by welding materials (C welding materials are adopted, the C welding materials are indium tin welding sheets (ln52Sn48), and the melting point temperature is 118 ℃). The first welding body 03-1 is welded with the semiconductor refrigeration sheet 02, and the second welding body 03-2 is welded with the SESAM chip 05.
In the embodiment, the first welding body 03-1 is in a cubic structure, the second welding body 03-2 is in a cylindrical structure, and gold layers with the size of hundreds of microns are plated on the surfaces of the first welding body 03-1 and the second welding body 03-2. The flatness of the first welding body 03-1 and the flatness of the second welding body 03-2 do not exceed 0.02, the first welding body 03-1 is mainly used for welding and fixing with a gold-plated semiconductor refrigerating sheet 02, the second welding body 03-2 is mainly used for fixing the SESAM chip 05, and meanwhile rapid conduction of accumulated heat on the SESAM chip 05 is achieved.
A thermistor 04: the thermistor 04 is welded on the surface of the metal heat sink 03 through a solder (specifically, the thermistor 04 is welded on the front surface of the first welding body 03-1), and the thermistor 04 is mainly used for monitoring the temperature change of the metal heat sink 03 and constructing a temperature control feedback loop for the constant temperature operation of the SESAM chip 5 together with the gold-plated semiconductor refrigeration piece 02.
The SESAM chip 05: referring to fig. 4, the SESAM chip 05 includes a SESAM chip body 05-2, and a gold plating layer 05-1 is plated on a surface of the SESAM chip body 05-2. The size of the SESAM chip body 05-2 should not be larger than the cross-sectional area of the cylinder in the second solder body 03-2. In the use process, because the substrate of the SESAM chip 05 is made of GaAs material, the influence of overhigh temperature on a film layer of the SESAM chip is avoided, and C welding flux with low melting point temperature is selected for welding. In this example, a gold-plated SESAM chip 05 having a size of 1mm × 1mm × 0.3mm was plated with a gold film having a thickness of 20 μm on a GaAs substrate of the SESAM chip 05, an operating band was a C-band, a modulation depth was 20%, and a relaxation time was 2 ps.
In this embodiment, the metal base plate 01, the semiconductor refrigeration chip 02, the metal heat sink 03, the thermistor 04, and the SESAM chip 05 are all welded by using solder (specifically, see the solder a, the solder B, and the solder C above) instead of the existing glue for bonding, so that not only is pollution caused by using glue to the SESAM avoided, but also the SESAM chip has the advantages of excellent heat dissipation performance, wide working temperature range, high reliability, good long-term stability, long service life, and the like, and the thermal damage resistance of the SESAM chip is greatly improved.
The embodiment of the invention also provides a manufacturing method of the semiconductor saturable absorber mirror capable of improving the thermal damage resistance, which comprises the following manufacturing steps:
step S1: the welding surface of the metal bottom plate 01 and the metal heat sink 03, the hot surface and the cold surface of the semiconductor refrigeration sheet 02, and the gold-plated surfaces of the thermistor 04 and the SESAM chip 05 are fully cleaned by cleaning materials. In this embodiment, the bonding surface of the metal base plate 01 and the metal heat sink 03, the hot surface and the cold surface of the gold-plated semiconductor cooling plate 02, and the gold-plated surfaces of the thermistor 04 and the gold-plated SESAM chip 05 are sufficiently cleaned with absolute ethyl alcohol (alcohol).
Step S2: placing a proper amount of solder A on the welding surface of the metal base plate 01, tightly attaching the hot surface of the semiconductor refrigerating sheet 2 to the solder A, heating to a preset temperature for a period of time, and cooling to normal temperature after the hot surfaces of the metal base plate 01 and the semiconductor refrigerating sheet 02 are fully soaked with the solder A. In this embodiment, the metal base plate 01 is fixed on a constant temperature heating furnace, the temperature control range of the constant temperature heating furnace is 0 to 500 ℃, and the temperature control precision is ± 1 ℃. Then 0.2g of solder A is placed on the welding surface, a vacuum suction nozzle fixed on a three-dimensional micro-displacement platform (in the embodiment, the three-dimensional micro-displacement platform is used for fixing the vacuum suction nozzle and realizing the accurate movement of the vacuum suction nozzle in six directions of front, back, left, right, up and down, the accuracy of the three-dimensional micro-displacement platform is not more than 0.1mm) is adopted to hold the gilded semiconductor refrigeration piece 02 and stick the hot surface of the gilded semiconductor refrigeration piece 02 to the solder A, the accuracy of the three-dimensional micro-displacement platform is 0.1mm, the temperature of a constant temperature heating furnace is raised to 230 ℃ for 10s, after the hot surfaces of the metal base plate 01 and the gilded semiconductor refrigeration piece 02 are fully soaked with the solder A, the constant.
Step S3: a proper amount of solder A is placed on the welding surface of a first welding body 03-1 in the metal heat sink 03, then the thermistor 04 is tightly attached to the solder A, the temperature is heated to a preset temperature for a period of time, and the temperature is reduced to the normal temperature after the welding surface of the first welding body 03-1 and the thermistor 04 are fully soaked with the solder A. In the embodiment, the metal heat sink 03 is fixed on a constant temperature heating furnace, then a proper amount of solder A is placed on the welding surface of the side surface of the cubic portion of the first welding body 03-1, the thermistor 04 is held by a vacuum suction nozzle and is tightly attached to the solder A, the temperature of the constant temperature heating furnace is raised to 230 ℃ for 15 seconds, after the welding surface of the side surface of the cubic portion of the first welding body 03-1 of the metal heat sink 03 and the thermistor 04 and the solder A are fully soaked, the temperature of the constant temperature heating furnace is reduced to 25 ℃, and the vacuum suction nozzle is removed.
Step S4: placing a proper amount of solder B on the welding surface of the first welding body 03-1 in the metal heat sink and welded with the semiconductor refrigerating sheet 02, tightly attaching the cold surface of the semiconductor refrigerating sheet 02 to the solder B, heating to a preset temperature, and cooling to normal temperature after the welding surface of the first welding body 03-1 in the metal heat sink 03 and the semiconductor refrigerating sheet 02 are fully infiltrated with the solder B respectively. In the embodiment, after the thermistor 04 is welded, the welding surface of the 03-1 cubic part of the metal heat sink 03 is placed on a constant temperature heating furnace with the welding surface facing upwards, the metal base plate 01 is clamped by a vacuum suction nozzle, then 0.1g of solder B is placed on the welding surface of the 03-1 cubic part, the gold-plated TEC cold surface is attached to the solder B, the temperature of the constant temperature heating furnace is raised to 160 ℃ for 10 seconds, after the welding surface of the 03-1 cubic part of the metal heat sink 03 and the gold-plated TEC cold surface are fully soaked with the solder B, the constant temperature heating furnace is cooled to 25 ℃ at normal temperature, and the vacuum suction nozzle is removed.
Step five: placing a proper amount of C solder on the welding surface of the second welding body 03-2 in the metal heat sink 03, tightly attaching the SESAM chip 5 to the C solder, heating to a preset temperature for a period of time, and cooling to normal temperature after the welding surface of the second welding body 03-2 in the metal heat sink 03 and the SESAM chip 5 and the C solder are fully soaked. In this embodiment, the second welded body 03-2 of the metal heat sink 03 is placed on a constant temperature heating furnace with the welding surface facing upward, then 0.05g of C solder is placed on the welding surface of the second welded body 03-2, the gold-plated SESAM chip 05 is held by a vacuum nozzle, the gold-plated surface of the SESAM chip 05 is tightly attached to the C solder, the temperature of the constant temperature heating furnace is raised to 130 ℃ for 5s, the welding surface of the second welded body 03-2 of the metal heat sink 03 and the gold-plated surface of the SESAM chip 05 are fully soaked with the C solder, then the constant temperature heating furnace is cooled to 25 ℃ at normal temperature, and the vacuum nozzle is removed.
Step six: and detecting whether a welding cavity exists on the welding surface of the SESAM chip 05 by using ultrasonic or X-ray, if so, increasing the heating temperature or prolonging the heating time, and repeating the operation steps of the fifth step until no welding cavity is detected, and if not, indicating that the welding effect is good.
Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art will understand that various changes, modifications and substitutions can be made without departing from the spirit and scope of the invention as defined by the appended claims. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. A semiconductor saturable absorption mirror capable of improving thermal damage resistance is characterized in that: the refrigerator comprises a metal bottom plate (01), a semiconductor refrigerating sheet (02) is welded on the top of the metal bottom plate (01) through a solder, a metal heat sink (03) is welded on the semiconductor refrigerating sheet (02) through the solder, and a thermistor (04) is adhered on the surface of the metal heat sink (03) through the solder; one side of the metal heat sink (03) is welded with an SESAM chip (05) through a solder.
2. The semiconductor saturable absorber mirror according to claim 1, wherein: the metal bottom plate (01) is made of metal materials such as copper, aluminum or kovar alloy.
3. The semiconductor saturable absorber mirror according to claim 1, wherein: gold layer films with hundred microns are plated on the top surface and the bottom surface of the semiconductor refrigerating sheet (02) respectively.
4. The semiconductor saturable absorber mirror according to claim 1, wherein: the metal heat sink (03) comprises a first welding body (03-1) and a second welding body (03-2); the first welding body (03-1) and the second welding body (03-2) are welded together through welding materials, the first welding body (03-1) is welded with the semiconductor refrigeration sheet (02), and the second welding body (03-2) is welded with the SESAM chip (05).
5. The semiconductor saturable absorber mirror according to claim 4, wherein: the first welding body (03-1) is of a cubic structure, and the second welding body (03-2) is of a cylindrical structure.
6. The semiconductor saturable absorber mirror according to claim 4, wherein: the surfaces of the first welding body (03-1) and the second welding body (03-2) are plated with gold films of hundred micrometers.
7. The semiconductor saturable absorber mirror according to claim 5, wherein: the SESAM chip (05) comprises an SESAM chip body (05-2), and a gold plating layer (05-1) is plated on the surface of the SESAM chip body (05-2).
8. The semiconductor saturable absorber mirror according to claim 7, wherein: the size of the SESAM chip body (05-2) is not larger than the cross-sectional area of the cylinder in the second welding body (03-2).
9. A method for manufacturing a semiconductor saturable absorption mirror capable of improving thermal damage resistance is characterized by comprising the following steps:
the method comprises the following steps: cleaning the welding surface of the metal bottom plate and the metal heat sink, the hot surface and the cold surface of the semiconductor refrigeration sheet, the thermistor and the gold-plated surface of the SESAM chip by using a cleaning material;
step two: placing a proper amount of solder A on the welding surface of the metal base plate, tightly attaching the hot surface of the semiconductor refrigeration piece to the solder A, heating to a preset temperature for a period of time, and cooling to normal temperature after the hot surfaces of the metal base plate and the semiconductor refrigeration piece are fully infiltrated with the solder A;
step three: placing a proper amount of solder A on the welding surface of a first welding body in the metal heat sink, then tightly attaching the thermistor to the solder A, heating to a preset temperature for a period of time, and cooling to normal temperature after the welding surface of the first welding body, the thermistor and the solder A are fully soaked;
step four: placing a proper amount of solder B on the welding surface of the first welding body in the metal heat sink, which is welded with the semiconductor refrigerating sheet, attaching the cold surface of the semiconductor refrigerating sheet to the solder B, heating to a preset temperature, and cooling to normal temperature after the welding surface of the first welding body in the metal heat sink and the semiconductor refrigerating sheet are respectively and fully infiltrated with the solder B;
step five: placing a proper amount of C solder on the welding surface of the second welding body in the metal heat sink, tightly attaching the SESAM chip to the C solder, heating to a preset temperature for a period of time, and cooling to normal temperature after the welding surface of the second welding body in the metal heat sink, the SESAM chip and the C solder are fully soaked;
step six: and detecting whether a welding cavity exists on the welding surface of the SESAM chip by adopting ultrasonic or X-ray, if so, increasing the heating temperature or prolonging the heating time, and repeating the operation steps of the fifth step until no welding cavity is detected.
10. The method of claim 9, wherein the step of forming the semiconductor saturable absorber mirror comprises: the melting point temperatures of the solder A, the solder B and the solder C are reduced in sequence.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| CN102832536A (en) * | 2012-08-16 | 2012-12-19 | 中国科学院光电研究院 | Resonant cavity for outputting mode-locking picosecond laser and mode-locking picosecond laser device |
| CN105610041A (en) * | 2016-01-22 | 2016-05-25 | 四川大学 | Microchip laser system with low time jitter and picosecond pulse output |
| CN106229809A (en) * | 2016-09-20 | 2016-12-14 | 大连艾科科技开发有限公司 | Chip carrier for semiconductor laser |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN108777430A (en) * | 2018-08-22 | 2018-11-09 | 苏州易锐光电科技有限公司 | Coaxial packaging optical assembly and coaxial packaging laser |
| CN108922869A (en) * | 2018-07-13 | 2018-11-30 | 广东格斯泰气密元件有限公司 | A kind of SMD encapsulation base of band TEC- aluminium nitride-metal ternary structural |
| CN109546526A (en) * | 2018-12-29 | 2019-03-29 | 广东瑞谷光网通信股份有限公司 | The coaxial active package structure of electro-absorption modulation sealed laser |
| CN109818250A (en) * | 2019-02-19 | 2019-05-28 | 武汉安扬激光技术有限责任公司 | The all -fiber enclosed package structure and packaging method of semiconductor saturable absorbing mirror |
| CN110867725A (en) * | 2019-11-29 | 2020-03-06 | 上海航天控制技术研究所 | VCSEL laser TO packaging structure capable of actively controlling temperature |
-
2020
- 2020-12-29 CN CN202011600122.6A patent/CN112713493A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102545022A (en) * | 2012-01-20 | 2012-07-04 | 上海交通大学 | Saturable absorption mirror of wide band graphene |
| CN102832536A (en) * | 2012-08-16 | 2012-12-19 | 中国科学院光电研究院 | Resonant cavity for outputting mode-locking picosecond laser and mode-locking picosecond laser device |
| CN105610041A (en) * | 2016-01-22 | 2016-05-25 | 四川大学 | Microchip laser system with low time jitter and picosecond pulse output |
| CN106229809A (en) * | 2016-09-20 | 2016-12-14 | 大连艾科科技开发有限公司 | Chip carrier for semiconductor laser |
| CN107809055A (en) * | 2017-12-14 | 2018-03-16 | 长春理工大学 | A kind of high-power semiconductor laser chip welding and assembling method |
| CN108922869A (en) * | 2018-07-13 | 2018-11-30 | 广东格斯泰气密元件有限公司 | A kind of SMD encapsulation base of band TEC- aluminium nitride-metal ternary structural |
| CN108777430A (en) * | 2018-08-22 | 2018-11-09 | 苏州易锐光电科技有限公司 | Coaxial packaging optical assembly and coaxial packaging laser |
| CN109546526A (en) * | 2018-12-29 | 2019-03-29 | 广东瑞谷光网通信股份有限公司 | The coaxial active package structure of electro-absorption modulation sealed laser |
| CN109818250A (en) * | 2019-02-19 | 2019-05-28 | 武汉安扬激光技术有限责任公司 | The all -fiber enclosed package structure and packaging method of semiconductor saturable absorbing mirror |
| CN110867725A (en) * | 2019-11-29 | 2020-03-06 | 上海航天控制技术研究所 | VCSEL laser TO packaging structure capable of actively controlling temperature |
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Application publication date: 20210427 |