CN110058512A - A kind of achievable power enhancing, phase-adjustable and locking lattice field device - Google Patents
A kind of achievable power enhancing, phase-adjustable and locking lattice field device Download PDFInfo
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- CN110058512A CN110058512A CN201910295409.3A CN201910295409A CN110058512A CN 110058512 A CN110058512 A CN 110058512A CN 201910295409 A CN201910295409 A CN 201910295409A CN 110058512 A CN110058512 A CN 110058512A
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- G—PHYSICS
- G04—HOROLOGY
- G04F—TIME-INTERVAL MEASURING
- G04F5/00—Apparatus for producing preselected time intervals for use as timing standards
- G04F5/14—Apparatus for producing preselected time intervals for use as timing standards using atomic clocks
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Abstract
The present invention provides a kind of achievable power enhancings, the lattice field device of phase-adjustable and locking, including laser, vacuum cavity, plano-concave mirror and phase regulator, the vacuum cavity opposite sides has a transparent window, and cold atom sample is placed in vacuum cavity；The plano-concave mirror is separately mounted to outside transparent window, and concave surface is opposite；After the laser of the laser emitting sequentially passes through one of plano-concave mirror, transparent window, cold atom sample and transparent window, reflected by the road another plano-concave Jing Yuan, thus laser multiple coherent superposition at cold atom sample；Another described plano-concave mirror can move under the driving of phase regulator along laser optical path.The present invention can be realized crystal field phase-adjustable section and locking, and device is simply small and exquisite.
Description
Technical field
The invention belongs to cold atom technical fields, and in particular to a kind of lattice field device.
Background technique
Atom light clock is as current latest generation benchmark atomic clock in the world, frequency accuracy and stabilization with superelevation
Degree.Atom light clock provides high-precision optical frequency standard sources by cold atoms sample preparation, and the loading of optical lattice is cold atom
A very crucial step in sample preparation, number, density and the stability that optical lattice loads atom directly affect clock transition spectral line
Signal-to-noise ratio, further influence the final stability of light clock.
The crystal field for building atom light clock, the laser optical power needed is very big, and it is cold to imprison just to be able to achieve enough well depths
Atom.The laser built in light clock system for optical lattice at present generally uses ti sapphire laser or puts with TA
The semiconductor laser of big structure is exported to obtain high-power laser with this, meets requirement of experiment, but such laser light source
Not only economic cost is high and bulky.Usually building optical lattice all is realized by lens and lens+reflecting mirror, is such as schemed
Shown in 1, not only stability and tunability are poor for such realization rate, but also increase the complexity of system.Therefore, in order to subtract
The volume of small laser, reduces the complexity of system, while increasing the adjustability and stability of system, provides a kind of achievable function
Lockable lattice field device is particularly important again for rate enhancing, phase-adjustable.
Summary of the invention
For overcome the deficiencies in the prior art, the present invention provides a kind of achievable power enhancing, phase-adjustable lockable again
Lattice field device, can be realized crystal field phase-adjustable section and locking, device is simply small and exquisite.
The technical solution adopted by the present invention to solve the technical problems is: a kind of achievable power enhancing, phase-adjustable are again
Lockable lattice field device, including laser, vacuum cavity, plano-concave mirror and phase regulator.
The vacuum cavity opposite sides has a transparent window, and cold atom sample is placed on vacuum cavity
It is interior；The plano-concave mirror is separately mounted to outside transparent window, and concave surface is opposite；The laser of the laser emitting sequentially passes through it
In after a plano-concave mirror, transparent window, cold atom sample and transparent window, reflected by the road another plano-concave Jing Yuan, thus laser
The multiple coherent superposition at cold atom sample；Another described plano-concave mirror can be under the driving of phase regulator along laser light
Road is mobile.
The laser for no TA enlarged structure semiconductor laser with tunable.
Two plano-concave curvature radius are equal.
In the plano-concave mirror, the concave surface vacuum alternating steam coating silicon dioxide anti-reflection film and dioxy of light transmissive plano-concave mirror are swashed
Change zirconium anti-reflection film, vacuum is alternately deposited 10~12 layers altogether；Alternately vapor deposition magnesium fluoride is high for the concave surface vacuum of the plano-concave mirror of laser reflection
Anti- film and calcirm-fluoride high-reflecting film, vacuum is alternately deposited 10~15 layers altogether.
The phase regulator uses S-303.OL phase regulator, and range is 3 μm, and repeatable accuracy is
0.7nm。
The phase controller moves under control unit driving or latched position.
The beneficial effects of the present invention are: having the performance for amplifying incident laser power gain, and it is adjustable and locks crystalline substance
The phase of lattice field, the final number and density for improving crystal field and loading atom, realizes optical lattice to the most strong stability beam of strontium atom
It ties up.This not only enormously simplifies the complexity of crystal field laser light source and system, further improves the stability of crystal field.
The light intensity of lattice laser increases, according to the calculation formula of potential well depth it is found that imprison potential well depth and light intensity are at line
Sexual intercourse.Therefore when the light intensity at lattice waist spot increases, then correspondingly potential well depth is linearly increasing.Guarantee certain potential well
Depth, if incident optical power will be greatly reduced using the gain cavity.In laser minimum light spot position, i.e. imprison at waist spot
Potential well is most deep, therefore, it can be achieved that the most intense beam to cold atom is tied up after lattice laser waist spot is overlapped with cold atom sample position.Swash
By reaching plano-concave mirror M2 after plano-concave mirror M1 and vacuum plant, plano-concave mirror M1 peace concave mirror M2 is formd the laser beam that light device issues
One symmetrical non-confocal chamber, incident laser meeting roundtrip in linear gain cavity, and be same-phase coherent superposition, so that it may
So that intracavitary distribution of light intensity is greater than the intensity of input light.Further by the phase regulator after fine adjustment plano-concave mirror M2, make
It obtains incident laser and the with a tight waist of reflection laser is completely coincident with cold atom sample, that is, the most intense beam for realizing atomic group is tied up.In this way,
It is realized using the present invention and incident laser power is amplified, on the one hand greatly reduced the incident power of optical lattice light source, enhance
Laser intensity at laser waist spot, and further change the phase of reflected light by phase regulator, so that roundtrip light
It is with a tight waist to be overlapped with the fine of cold atom sample position, atom number and density are significantly improved in this way, realize optical lattice to strontium atom
Most intense beam tie up；Without TA enlarged structure or other power-magnifying methods after the output of another aspect laser, reduce laser
Volume, while also reducing the complexity of system.
Detailed description of the invention
Fig. 1 is the schematic illustration of the prior art；
Fig. 2 is the structural schematic diagram of the embodiment of the present invention；
In figure, 1- laser, 2- vacuum plant, 3- plano-concave mirror M1,4- plano-concave mirror M2,5- phase regulator, 6- control list
Member, 7- atom heating furnace, 8- cold atom sample, 9-EMCCD, 10- mounting plate.
Specific embodiment
Present invention will be further explained below with reference to the attached drawings and examples, and the present invention includes but are not limited to following implementations
Example.
Required lattice ray laser light source output power is big when loading the present invention overcomes optical lattice in light clock system, laser
The excessive disadvantage of volume, while realizing crystal field phase-adjustable section and locking, it is overlapped incident light and reflection luminous energy well, it is real
The coherent superposition of existing same-phase, is finally completed building for stable lattice stationary field, can be widely applied for all kinds of neutral atoms
Light clock, acquisition number is more in optical lattice, and the big cold atom sample of density improves the signal-to-noise ratio of light clock clock transition signal.
Technical scheme is as follows:
It is provided with laser, vacuum plant and cold atom sample on a mounting board, the laser emitting of laser is perpendicular to true
One flange window of empty device installs a plano-concave mirror M1 in the side of the flange window, and the other side is also installed same flat
Concave mirror M2, this just constitutes the structure for being similar to F-P linear gain chamber.Laser power of the invention enhances amplifying device
Are as follows: the plano-concave mirror M1 peace concave mirror M2 on mounting plate, laser can be repeatedly concerned in this cavity by the linear gain chamber, laser
The effect to laser optical power amplification is injected is realized in superposition.Plano-concave mirror M2 is mounted with a phase regulator, phase regulator
External connection control unit, control unit drive phase regulator by internal or external input control signal in the horizontal direction
Telescopic moving, maximum stroke is 3 μm, and precision, which can control, drives in 0.7nm the realization micro-locality of plano-concave mirror M2 to move
Dynamic, and then change the phase of reflected light, after the waist spot of incident laser and reflection laser is completely coincident, optical lattice can be from this time
It is observed on EMCCD, brightness reaches most bright, is then locked M2 plano-concave mirror by the PID/feedback circuit in control unit
Fixed, this completes the controls and locking to laser phase.
The laser for no TA enlarged structure semiconductor laser with tunable.
The radius of curvature of plano-concave mirror M1 peace concave mirror M2 of the invention is equal.
The anti-reflection film that vacuum is alternately deposited on the mirror surface of plano-concave mirror M1 of the invention is silica and zirconium dioxide, vacuum
Alternately 10~12 layers of vapor deposition, transmissivity 99.98%, i.e. reflectivity are 0.02%；Vacuum evaporation on the mirror surface of plano-concave mirror M2
High-reflecting film is magnesium fluoride and calcirm-fluoride, and vacuum is alternately deposited 10~15 layers, transmissivity 0.01% is reflected into 99.99%.
The range of S-303.OL phase regulator of the invention is 3 μm, repeatable accuracy 0.7nm.
As shown in Fig. 2, the present invention by taking strontium atom optical lattice clock as an example, provide the enhancing of achievable power, phase-adjustable
Lattice field device is by laser 1, vacuum plant 2, M1 plano-concave mirror 3, M2 plano-concave mirror 4, phase regulator 5, control unit 6, atom
Heating furnace 7, cold atom sample 8, EMCCD9, mounting plate 10 connect and compose.
Being fixedly connected on mounting plate 10 with screw threads for fastening connector has laser 1, vacuum plant 2, atom heating furnace 7,
There is cold atom sample 8 at the geometric center of vacuum plant 2.Laser 1, vacuum plant 2, atom heating furnace 7, EMCCD9 are located at
In the same horizontal plane, laser 1 provides laser light source for the present invention, and laser passes through the geometry of M1 plano-concave mirror 3 and vacuum plant 2
Cold atom sample 8 at center is further reflected by M2 plano-concave mirror 4, and laser is just formed by M1 plano-concave mirror 3 and M2 plano-concave mirror 4
The intracavitary roundtrip of linear gain, final incident laser power obtains gain amplification, and passes through phase regulator 5 and control
Unit 6 changes the phase of reflected light, loads the image and brightness that atomic group is presented on EMCCD9 by observation lattice, can be true
Determine at the position with a tight waist for whether being located just at cold atom sample 8 of laser, if the realization of brightness at this time is most bright, illustrates roundtrip
Laser beam waist with cold atom sample 8 realization be overlapped well, can locking phase adjuster 5.
Compared with original optical lattice builds technology, laser power may be implemented using the technology of the invention and amplify 50 times
(i.e. chamber gain is 50 times, if intracavitary loss δ=0.01), and realize the harmonious locking of crystal field phase-adjustable.With strontium atom
For light clock, when optical lattice well depth is 95 μ K, it is 840mW that former 813nm laser, which needs input power, and waist spot size is 38 μ
M, for stationary field, laser intensity at this time is 37.5kW/cm2, if it is selecting the linear gain chamber (chamber gain is 50 times),
As the long L=200mm of gain cavity, 813nm laser input power is 117mW, then it is 50 μm that waist spot, which may be implemented, 95 μ K of well depth
Optical lattice, corresponding light intensity is 74.25kW/cm2；As the long L=500mm of gain cavity, 813nm laser input power is 191mW,
It is 64 μm that waist spot, which then may be implemented, the optical lattice of 95 μ K of well depth, and corresponding light intensity is 74.5kW/cm2。
Claims (6)
1. the lattice field device of a kind of achievable power enhancing, phase-adjustable and locking, including laser, vacuum cavity, plano-concave
Mirror and phase regulator, it is characterised in that: the vacuum cavity opposite sides has a transparent window, cold atom sample
Product are placed in vacuum cavity；The plano-concave mirror is separately mounted to outside transparent window, and concave surface is opposite；The laser emitting
Laser sequentially pass through one of plano-concave mirror, transparent window, cold atom sample and transparent window after, it is former by another plano-concave mirror
Road reflection, thus laser multiple coherent superposition at cold atom sample；Another described plano-concave mirror can be in phase regulator
Driving under moved along laser optical path.
2. the lattice field device of achievable power enhancing according to claim 1, phase-adjustable and locking, feature exist
In: the laser be the semiconductor laser with tunable of no TA enlarged structure.
3. the lattice field device of achievable power enhancing according to claim 1, phase-adjustable and locking, feature exist
In: two plano-concave curvature radius are equal.
4. the lattice field device of achievable power enhancing according to claim 1, phase-adjustable and locking, feature exist
In: in the plano-concave mirror, swash the concave surface vacuum alternating steam coating silicon dioxide anti-reflection film and zirconium dioxide of light transmissive plano-concave mirror
Anti-reflection film, vacuum is alternately deposited 10~12 layers altogether；Magnesium fluoride high-reflecting film is alternately deposited in the concave surface vacuum of the plano-concave mirror of laser reflection
With calcirm-fluoride high-reflecting film, vacuum is alternately deposited 10~15 layers altogether.
5. the lattice field device of achievable power enhancing according to claim 1, phase-adjustable and locking, feature exist
In: the phase regulator uses S-303.OL phase regulator, and range is 3 μm, repeatable accuracy 0.7nm.
6. the lattice field device of achievable power enhancing according to claim 1, phase-adjustable and locking, feature exist
In: the phase controller moves under control unit driving or latched position.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910295409.3A CN110058512B (en) | 2019-04-12 | 2019-04-12 | Lattice field device capable of realizing power enhancement, phase adjustment and locking |
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| CN201910295409.3A CN110058512B (en) | 2019-04-12 | 2019-04-12 | Lattice field device capable of realizing power enhancement, phase adjustment and locking |
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| CN110058512A true CN110058512A (en) | 2019-07-26 |
| CN110058512B CN110058512B (en) | 2020-12-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075874A (en) * | 2021-03-23 | 2021-07-06 | 中国科学院精密测量科学与技术创新研究院 | Device for improving uncertainty of radiation frequency shift of atomic optical lattice blackbody |
| CN113296384A (en) * | 2021-06-10 | 2021-08-24 | 中国科学院国家授时中心 | Dual light-adjustable lattice device for space light clock |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0601567A2 (en) * | 1992-12-08 | 1994-06-15 | Sony Corporation | Optical pickup device for magneto-optical recording and reproducing system |
| US6903803B2 (en) * | 2000-05-30 | 2005-06-07 | Nikon Corporation | Projection optical system, exposure apparatus incorporating this projection optical system, and manufacturing method for micro devices using the exposure apparatus |
| CN101938086A (en) * | 2010-08-25 | 2011-01-05 | 南京大学 | Method for constructing cascade superlattice mode-locked laser |
| CN102104231A (en) * | 2011-01-06 | 2011-06-22 | 中国科学院上海光学精密机械研究所 | Graphite Raman locked mode laser |
| EP2420886A1 (en) * | 2009-04-16 | 2012-02-22 | Nalux Co. Ltd. | Terahertz electromagnetic wave generating element |
| CN104242040A (en) * | 2014-09-25 | 2014-12-24 | 南京大学 | Non-linear Cerenkov radiation light source based on doped optical superlattice |
| CN107104361A (en) * | 2017-06-19 | 2017-08-29 | 中科和光（天津）应用激光技术研究所有限公司 | A kind of miniaturization blue laser of semiconductor laser direct frequency doubling |
| CN108872178A (en) * | 2018-08-09 | 2018-11-23 | 中国科学院国家授时中心 | Optical lattice imaging device |
-
2019
- 2019-04-12 CN CN201910295409.3A patent/CN110058512B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0601567A2 (en) * | 1992-12-08 | 1994-06-15 | Sony Corporation | Optical pickup device for magneto-optical recording and reproducing system |
| US6903803B2 (en) * | 2000-05-30 | 2005-06-07 | Nikon Corporation | Projection optical system, exposure apparatus incorporating this projection optical system, and manufacturing method for micro devices using the exposure apparatus |
| EP2420886A1 (en) * | 2009-04-16 | 2012-02-22 | Nalux Co. Ltd. | Terahertz electromagnetic wave generating element |
| CN101938086A (en) * | 2010-08-25 | 2011-01-05 | 南京大学 | Method for constructing cascade superlattice mode-locked laser |
| CN102104231A (en) * | 2011-01-06 | 2011-06-22 | 中国科学院上海光学精密机械研究所 | Graphite Raman locked mode laser |
| CN104242040A (en) * | 2014-09-25 | 2014-12-24 | 南京大学 | Non-linear Cerenkov radiation light source based on doped optical superlattice |
| CN107104361A (en) * | 2017-06-19 | 2017-08-29 | 中科和光（天津）应用激光技术研究所有限公司 | A kind of miniaturization blue laser of semiconductor laser direct frequency doubling |
| CN108872178A (en) * | 2018-08-09 | 2018-11-23 | 中国科学院国家授时中心 | Optical lattice imaging device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113075874A (en) * | 2021-03-23 | 2021-07-06 | 中国科学院精密测量科学与技术创新研究院 | Device for improving uncertainty of radiation frequency shift of atomic optical lattice blackbody |
| CN113296384A (en) * | 2021-06-10 | 2021-08-24 | 中国科学院国家授时中心 | Dual light-adjustable lattice device for space light clock |
| CN113296384B (en) * | 2021-06-10 | 2022-04-08 | 中国科学院国家授时中心 | Dual light-adjustable lattice device for space light clock |
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